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TW200603437A - Semiconductor light emitting device, manufacturing method thereof and semiconductor light emitting apparatus - Google Patents

Semiconductor light emitting device, manufacturing method thereof and semiconductor light emitting apparatus

Info

Publication number
TW200603437A
TW200603437A TW094108994A TW94108994A TW200603437A TW 200603437 A TW200603437 A TW 200603437A TW 094108994 A TW094108994 A TW 094108994A TW 94108994 A TW94108994 A TW 94108994A TW 200603437 A TW200603437 A TW 200603437A
Authority
TW
Taiwan
Prior art keywords
light emitting
light
layer
semiconductor light
reflective metal
Prior art date
Application number
TW094108994A
Other languages
English (en)
Other versions
TWI287303B (en
Inventor
Jun Suzuki
Masato Doi
Hiroyuki Okuyama
Goshi Biwa
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200603437A publication Critical patent/TW200603437A/zh
Application granted granted Critical
Publication of TWI287303B publication Critical patent/TWI287303B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials

Landscapes

  • Led Devices (AREA)
TW094108994A 2004-04-27 2005-03-23 Semiconductor light emitting device, manufacturing method thereof and semiconductor light emitting apparatus TWI287303B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004132007A JP2005317676A (ja) 2004-04-27 2004-04-27 半導体発光素子、半導体発光装置及び半導体発光素子の製造方法

Publications (2)

Publication Number Publication Date
TW200603437A true TW200603437A (en) 2006-01-16
TWI287303B TWI287303B (en) 2007-09-21

Family

ID=35241946

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094108994A TWI287303B (en) 2004-04-27 2005-03-23 Semiconductor light emitting device, manufacturing method thereof and semiconductor light emitting apparatus

Country Status (4)

Country Link
US (1) US7700959B2 (zh)
JP (1) JP2005317676A (zh)
TW (1) TWI287303B (zh)
WO (1) WO2005106974A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110034219A (zh) * 2019-04-28 2019-07-19 福建兆元光电有限公司 发光二极管及其制造方法

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JP5201566B2 (ja) * 2006-12-11 2013-06-05 豊田合成株式会社 化合物半導体発光素子及びその製造方法
JP4705062B2 (ja) * 2007-03-01 2011-06-22 株式会社神戸製鋼所 配線構造およびその作製方法
KR101039948B1 (ko) * 2010-04-23 2011-06-09 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
CN102544291B (zh) * 2010-12-31 2015-02-04 赛恩倍吉科技顾问（深圳）有限公司 半导体发光芯片及其制造方法
KR101332686B1 (ko) * 2012-07-11 2013-11-25 고려대학교 산학협력단 투명 전극을 구비하는 발광소자 및 그 제조 방법
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110034219A (zh) * 2019-04-28 2019-07-19 福建兆元光电有限公司 发光二极管及其制造方法
CN110034219B (zh) * 2019-04-28 2024-05-17 福建兆元光电有限公司 发光二极管及其制造方法

Also Published As

Publication number Publication date
US20080121904A1 (en) 2008-05-29
US7700959B2 (en) 2010-04-20
JP2005317676A (ja) 2005-11-10
TWI287303B (en) 2007-09-21
WO2005106974A1 (ja) 2005-11-10

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees