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TW200601566A - Semiconductor apparatus and manufacturing method thereof - Google Patents

Semiconductor apparatus and manufacturing method thereof

Info

Publication number
TW200601566A
TW200601566A TW094105693A TW94105693A TW200601566A TW 200601566 A TW200601566 A TW 200601566A TW 094105693 A TW094105693 A TW 094105693A TW 94105693 A TW94105693 A TW 94105693A TW 200601566 A TW200601566 A TW 200601566A
Authority
TW
Taiwan
Prior art keywords
channel region
semiconductor layer
electroconductive type
insulator
electroconductive
Prior art date
Application number
TW094105693A
Other languages
English (en)
Inventor
Shinzo Tsuboi
Original Assignee
Adv Lcd Tech Dev Ct Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Adv Lcd Tech Dev Ct Co Ltd filed Critical Adv Lcd Tech Dev Ct Co Ltd
Publication of TW200601566A publication Critical patent/TW200601566A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H10D30/6711—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect by using electrodes contacting the supplementary regions or layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

Landscapes

  • Thin Film Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
TW094105693A 2004-06-28 2005-02-24 Semiconductor apparatus and manufacturing method thereof TW200601566A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004189501 2004-06-28

Publications (1)

Publication Number Publication Date
TW200601566A true TW200601566A (en) 2006-01-01

Family

ID=35504658

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094105693A TW200601566A (en) 2004-06-28 2005-02-24 Semiconductor apparatus and manufacturing method thereof

Country Status (4)

Country Link
US (1) US20050285111A1 (zh)
KR (1) KR20060043869A (zh)
CN (1) CN1716617A (zh)
TW (1) TW200601566A (zh)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101278403B (zh) * 2005-10-14 2010-12-01 株式会社半导体能源研究所 半导体器件及其制造方法
US8174053B2 (en) * 2006-09-08 2012-05-08 Sharp Kabushiki Kaisha Semiconductor device, production method thereof, and electronic device
KR100875432B1 (ko) 2007-05-31 2008-12-22 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치
KR100889626B1 (ko) * 2007-08-22 2009-03-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 이를 구비한유기전계발광표시장치, 및 그의 제조방법
KR100889627B1 (ko) * 2007-08-23 2009-03-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 구비한유기전계발광표시장치
KR100982310B1 (ko) * 2008-03-27 2010-09-15 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR100989136B1 (ko) * 2008-04-11 2010-10-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR101002666B1 (ko) * 2008-07-14 2010-12-21 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR101889287B1 (ko) 2008-09-19 2018-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
US9035315B2 (en) * 2010-04-30 2015-05-19 Sharp Kabushiki Kaisha Semiconductor device, display device, and method for manufacturing semiconductor device
KR101559055B1 (ko) * 2014-07-22 2015-10-12 엘지디스플레이 주식회사 유기발광 표시패널 및 그 제조방법
CN104716200B (zh) * 2015-04-03 2018-01-09 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、阵列基板和显示装置
CN108054172B (zh) * 2017-11-30 2020-09-25 武汉天马微电子有限公司 阵列基板及其制作方法和显示装置
CN107895726A (zh) * 2017-11-30 2018-04-10 武汉天马微电子有限公司 一种阵列基板及其制作方法和显示装置
CN107910360A (zh) * 2017-12-06 2018-04-13 中国工程物理研究院电子工程研究所 一种新型碳化硅小角度倾斜台面终端结构及其制备方法
CN114678384A (zh) * 2022-04-25 2022-06-28 福建华佳彩有限公司 一种改善Taper侧面金属残留的TFT阵列基板结构及其制造方法
CN115692427B (zh) * 2022-11-14 2025-07-18 武汉华星光电技术有限公司 显示面板

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3171764B2 (ja) * 1994-12-19 2001-06-04 シャープ株式会社 半導体装置の製造方法
JPH10150204A (ja) * 1996-09-19 1998-06-02 Toshiba Corp 半導体装置およびその製造方法
JP3859821B2 (ja) * 1997-07-04 2006-12-20 株式会社半導体エネルギー研究所 半導体装置
JP3751469B2 (ja) * 1999-04-26 2006-03-01 沖電気工業株式会社 Ｓｏｉ構造の半導体装置の製造方法
JP4304884B2 (ja) * 2001-06-06 2009-07-29 日本電気株式会社 半導体装置及びその製造方法
JP2003298059A (ja) * 2002-03-29 2003-10-17 Advanced Lcd Technologies Development Center Co Ltd 薄膜トランジスタ

Also Published As

Publication number Publication date
CN1716617A (zh) 2006-01-04
US20050285111A1 (en) 2005-12-29
KR20060043869A (ko) 2006-05-15

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