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TW200605220A - Organic siloxane film, semiconductor device using same, flat panel display and raw material liquid - Google Patents

Organic siloxane film, semiconductor device using same, flat panel display and raw material liquid

Info

Publication number
TW200605220A
TW200605220A TW094119388A TW94119388A TW200605220A TW 200605220 A TW200605220 A TW 200605220A TW 094119388 A TW094119388 A TW 094119388A TW 94119388 A TW94119388 A TW 94119388A TW 200605220 A TW200605220 A TW 200605220A
Authority
TW
Taiwan
Prior art keywords
organic siloxane
semiconductor device
raw material
same
flat panel
Prior art date
Application number
TW094119388A
Other languages
English (en)
Other versions
TWI322469B (zh
Inventor
Daisuke Ryuzaki
Hiroshi Fukuda
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of TW200605220A publication Critical patent/TW200605220A/zh
Application granted granted Critical
Publication of TWI322469B publication Critical patent/TWI322469B/zh

Links

Classifications

    • H10P14/6922—
    • H10W20/071—
    • H10P14/6336—
    • H10P14/6342—
    • H10P14/6686—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31551—Of polyamidoester [polyurethane, polyisocyanate, polycarbamate, etc.]
    • Y10T428/31609—Particulate metal or metal compound-containing
    • Y10T428/31612—As silicone, silane or siloxane

Landscapes

  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
TW094119388A 2004-06-21 2005-06-10 Organic siloxane film, semiconductor device using same, flat panel display and raw material liquid TW200605220A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004182357 2004-06-21

Publications (2)

Publication Number Publication Date
TW200605220A true TW200605220A (en) 2006-02-01
TWI322469B TWI322469B (zh) 2010-03-21

Family

ID=35509999

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094119388A TW200605220A (en) 2004-06-21 2005-06-10 Organic siloxane film, semiconductor device using same, flat panel display and raw material liquid

Country Status (5)

Country Link
US (1) US8106385B2 (zh)
JP (1) JPWO2005124846A1 (zh)
CN (1) CN1969379A (zh)
TW (1) TW200605220A (zh)
WO (1) WO2005124846A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11086177B2 (en) 2015-01-26 2021-08-10 Samsung Display Co., Ltd. Display apparatus

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG183420A1 (en) 2010-02-19 2012-09-27 Univ Texas Branched siloxanes and methods for synthesis
US20170358445A1 (en) 2016-06-13 2017-12-14 Gvd Corporation Methods for plasma depositing polymers comprising cyclic siloxanes and related compositions and articles
US11679412B2 (en) 2016-06-13 2023-06-20 Gvd Corporation Methods for plasma depositing polymers comprising cyclic siloxanes and related compositions and articles
CN110473828A (zh) * 2019-08-22 2019-11-19 上海华力集成电路制造有限公司 电镀铜填充工艺方法
CN111710799B (zh) * 2020-06-30 2023-02-03 京东方科技集团股份有限公司 显示面板、显示装置及显示面板制备方法

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US5534731A (en) * 1994-10-28 1996-07-09 Advanced Micro Devices, Incorporated Layered low dielectric constant technology
US6177199B1 (en) 1999-01-07 2001-01-23 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with low organic content
US6177143B1 (en) * 1999-01-06 2001-01-23 Allied Signal Inc Electron beam treatment of siloxane resins
WO2000041231A1 (en) * 1999-01-07 2000-07-13 Alliedsignal, Inc. Dielectric films from organohydridosiloxane resins
JP2001122611A (ja) 1999-10-22 2001-05-08 Asahi Kasei Corp 多孔性シリカ薄膜
JP3615979B2 (ja) * 2000-01-18 2005-02-02 株式会社ルネサステクノロジ 半導体装置及びその製造方法
US20020142610A1 (en) * 2001-03-30 2002-10-03 Ting Chien Plasma etching of dielectric layer with selectivity to stop layer
US6962879B2 (en) * 2001-03-30 2005-11-08 Lam Research Corporation Method of plasma etching silicon nitride
US20020177321A1 (en) * 2001-03-30 2002-11-28 Li Si Yi Plasma etching of silicon carbide
US7084070B1 (en) * 2001-03-30 2006-08-01 Lam Research Corporation Treatment for corrosion in substrate processing
JP3914452B2 (ja) * 2001-08-07 2007-05-16 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP4972834B2 (ja) * 2001-08-28 2012-07-11 日立化成工業株式会社 シロキサン樹脂
JP2003064307A (ja) * 2001-08-28 2003-03-05 Hitachi Chem Co Ltd シリカ系被膜、シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品
US20030087534A1 (en) * 2001-09-10 2003-05-08 Rensselaer Polytechnic Institute Surface modification for barrier to ionic penetration
JP2003124207A (ja) * 2001-10-12 2003-04-25 Hitachi Chem Co Ltd 被膜、被膜形成用塗布液、被膜の製造方法及びその被膜を有する電子部品
JP4082022B2 (ja) * 2001-12-04 2008-04-30 日立化成工業株式会社 層間絶縁膜形成用組成物、層間絶縁膜の製造方法及び電子部品
JP3702842B2 (ja) * 2001-12-04 2005-10-05 日立化成工業株式会社 シリカ系被膜形成用組成物、シリカ系被膜、シリカ系被膜の製造方法及び電子部品
JP2003179232A (ja) * 2001-12-10 2003-06-27 Toshiba Corp 平面表示装置及びその製造方法
US20030171239A1 (en) * 2002-01-28 2003-09-11 Patel Bakul P. Methods and compositions for chemically treating a substrate using foam technology
JP3981870B2 (ja) 2002-02-20 2007-09-26 富士通株式会社 半導体装置の製造方法
JP3957154B2 (ja) * 2002-03-19 2007-08-15 富士通株式会社 低誘電率膜形成用組成物、低誘電率膜及びその製造方法、並びに半導体装置
US7384471B2 (en) 2002-04-17 2008-06-10 Air Products And Chemicals, Inc. Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
JP4177993B2 (ja) 2002-04-18 2008-11-05 株式会社ルネサステクノロジ 半導体装置及びその製造方法
US7547635B2 (en) * 2002-06-14 2009-06-16 Lam Research Corporation Process for etching dielectric films with improved resist and/or etch profile characteristics
SG168405A1 (en) * 2002-09-06 2011-02-28 Asahi Glass Co Ltd Polishing compound for insulating film for semiconductor integrated circuit and method for producing semiconductor integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11086177B2 (en) 2015-01-26 2021-08-10 Samsung Display Co., Ltd. Display apparatus

Also Published As

Publication number Publication date
US20080308790A1 (en) 2008-12-18
CN1969379A (zh) 2007-05-23
WO2005124846A1 (ja) 2005-12-29
US8106385B2 (en) 2012-01-31
JPWO2005124846A1 (ja) 2008-04-17
TWI322469B (zh) 2010-03-21

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees