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TW200500818A - Mask blank for use in EUV lithography and method for its production - Google Patents

Mask blank for use in EUV lithography and method for its production

Info

Publication number
TW200500818A
TW200500818A TW093110550A TW93110550A TW200500818A TW 200500818 A TW200500818 A TW 200500818A TW 093110550 A TW093110550 A TW 093110550A TW 93110550 A TW93110550 A TW 93110550A TW 200500818 A TW200500818 A TW 200500818A
Authority
TW
Taiwan
Prior art keywords
mask blank
electrically conductive
conductive coating
euv lithography
din
Prior art date
Application number
TW093110550A
Other languages
Chinese (zh)
Inventor
Lutz Aschke
Markus Renno
Mario Schiffler
Frank Sobel
Hans Becker
Original Assignee
Schott Glas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schott Glas filed Critical Schott Glas
Publication of TW200500818A publication Critical patent/TW200500818A/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B27/00—Machines, plants or systems, using particular sources of energy
    • F25B27/02—Machines, plants or systems, using particular sources of energy using waste heat, e.g. from internal-combustion engines
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B2327/00—Refrigeration system using an engine for driving a compressor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Combustion & Propulsion (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

This invention relates to a mask blank for use in EUV lithography and a method for its production. The mask blank comprises a substrate with a front side and a rear side whereby a coating is applied to the front side for use as a mask in EUV lithography and the rear side of the substrate comprises an electrically conductive coating. The electrically conductive coating is particularly abrasion resistant and strongly adhesive according to DIN 58196-5 (German Industry Standard), DIN 58196-4 and DIN 58196-6 and characterised by a minimum electrical conductivity. The electrically conductive coating is applied by means of ion-beam-assisted sputtering. Since the electrically conductive coating on the rear side is so abrasion resistant and strongly adhesive, the mask blank may be gripped, held and handled by means of an electrostatic holding device (chuck) without any troublesome abrasion occurring.
TW093110550A 2003-04-16 2004-04-15 Mask blank for use in EUV lithography and method for its production TW200500818A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10317792A DE10317792A1 (en) 2003-04-16 2003-04-16 Blank mask for use in EUV lithography and process for its manufacture

Publications (1)

Publication Number Publication Date
TW200500818A true TW200500818A (en) 2005-01-01

Family

ID=32981131

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093110550A TW200500818A (en) 2003-04-16 2004-04-15 Mask blank for use in EUV lithography and method for its production

Country Status (7)

Country Link
US (1) US7517617B2 (en)
EP (1) EP1475663A3 (en)
JP (1) JP2004320035A (en)
KR (1) KR20040090413A (en)
CN (1) CN1538238A (en)
DE (1) DE10317792A1 (en)
TW (1) TW200500818A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI450031B (en) * 2009-12-25 2014-08-21 東芝股份有限公司 Cleaning reticle, reticle stage cleaning method, and semiconductor device manufacturing method

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JP4792706B2 (en) * 2003-04-03 2011-10-12 旭硝子株式会社 Silica glass containing TiO2 and method for producing the same
US20060115744A1 (en) * 2004-08-06 2006-06-01 Lutz Aschke Method of producing a mask blank for photolithographic applications, and mask blank
DE102004038548A1 (en) * 2004-08-06 2006-03-16 Schott Ag Mask blank manufacturing method for photolithography processing, involves designing handling portion so that multilayered layer on front surface of substrate is exposed in each handling portion and pressed by mechanical clamp
DE102005027697A1 (en) * 2005-06-15 2006-12-28 Infineon Technologies Ag Extreme ultraviolet mask e.g. absorber mask having elevated sections and trenches, includes substrate with low coefficient of thermal expansion, multilayer and capping layer, where elevated sections are formed on continuous conductive layer
EP1962326B1 (en) * 2005-12-12 2012-06-06 Asahi Glass Company, Limited Reflection-type mask blank for euv lithography, and substrate with electrically conductive film for the mask blank
KR101585696B1 (en) * 2006-12-15 2016-01-14 아사히 가라스 가부시키가이샤 Reflective mask blank for euv lithography and substrate with function film for the mask blank
EP2099612B1 (en) * 2006-12-26 2012-06-06 Fujifilm Dimatix, Inc. Printing system with conductive element
US8736810B2 (en) 2008-08-21 2014-05-27 Asml Holding N.V. EUV reticle substrates with high thermal conductivity
KR101569896B1 (en) * 2009-03-16 2015-11-17 삼성전자주식회사 Reflective type photomask and manufacturing method thereof
JP5288191B2 (en) * 2009-03-17 2013-09-11 大日本印刷株式会社 Substrate fixing device
KR101097026B1 (en) * 2010-02-01 2011-12-20 주식회사 하이닉스반도체 EV mask and its formation method
KR20140016662A (en) 2012-07-30 2014-02-10 에스케이하이닉스 주식회사 Mask for extrem ultra violite lithograpghy and method for fabricating the same, method for correcting mask registration error
US9916998B2 (en) 2012-12-04 2018-03-13 Applied Materials, Inc. Substrate support assembly having a plasma resistant protective layer
US8941969B2 (en) * 2012-12-21 2015-01-27 Applied Materials, Inc. Single-body electrostatic chuck
US9632411B2 (en) 2013-03-14 2017-04-25 Applied Materials, Inc. Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor
US9354508B2 (en) 2013-03-12 2016-05-31 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
US20140272684A1 (en) 2013-03-12 2014-09-18 Applied Materials, Inc. Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
US9612521B2 (en) * 2013-03-12 2017-04-04 Applied Materials, Inc. Amorphous layer extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
US9069253B2 (en) * 2013-03-13 2015-06-30 Nanya Technology Corportion Mask structure
JP5565495B2 (en) * 2013-04-12 2014-08-06 大日本印刷株式会社 Substrate fixing device
US9618836B2 (en) * 2014-04-22 2017-04-11 Asahi Glass Company, Limited Reflective mask blank for EUV lithography, substrate with funtion film for the mask blank, and methods for their production
DE102015113548A1 (en) * 2015-07-24 2017-01-26 Schott Ag High-precision method for determining the thermal expansion
US10020218B2 (en) 2015-11-17 2018-07-10 Applied Materials, Inc. Substrate support assembly with deposited surface features
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI450031B (en) * 2009-12-25 2014-08-21 東芝股份有限公司 Cleaning reticle, reticle stage cleaning method, and semiconductor device manufacturing method

Also Published As

Publication number Publication date
EP1475663A3 (en) 2005-11-23
JP2004320035A (en) 2004-11-11
US7517617B2 (en) 2009-04-14
KR20040090413A (en) 2004-10-22
DE10317792A1 (en) 2004-11-11
EP1475663A2 (en) 2004-11-10
CN1538238A (en) 2004-10-20
US20040234870A1 (en) 2004-11-25

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