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TW200504815A - Apparatus using hybrid coupled plasma - Google Patents

Apparatus using hybrid coupled plasma

Info

Publication number
TW200504815A
TW200504815A TW093121025A TW93121025A TW200504815A TW 200504815 A TW200504815 A TW 200504815A TW 093121025 A TW093121025 A TW 093121025A TW 93121025 A TW93121025 A TW 93121025A TW 200504815 A TW200504815 A TW 200504815A
Authority
TW
Taiwan
Prior art keywords
high frequency
frequency generator
antennas
coupled plasma
power
Prior art date
Application number
TW093121025A
Other languages
English (en)
Other versions
TWI382448B (zh
Inventor
Gi-Chung Kwon
Hong-Young Chang
Yong-Kwan Lee
Original Assignee
Jusung Eng Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jusung Eng Co Ltd filed Critical Jusung Eng Co Ltd
Publication of TW200504815A publication Critical patent/TW200504815A/zh
Application granted granted Critical
Publication of TWI382448B publication Critical patent/TWI382448B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
TW093121025A 2003-07-14 2004-07-14 使用混合耦合電漿之裝置 TWI382448B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020030047847A KR101007822B1 (ko) 2003-07-14 2003-07-14 혼합형 플라즈마 발생 장치

Publications (2)

Publication Number Publication Date
TW200504815A true TW200504815A (en) 2005-02-01
TWI382448B TWI382448B (zh) 2013-01-11

Family

ID=34074858

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093121025A TWI382448B (zh) 2003-07-14 2004-07-14 使用混合耦合電漿之裝置

Country Status (4)

Country Link
US (1) US7442273B2 (zh)
KR (1) KR101007822B1 (zh)
CN (1) CN100411088C (zh)
TW (1) TWI382448B (zh)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8917022B2 (en) 2008-05-22 2014-12-23 Emd Corporation Plasma generation device and plasma processing device
TWI473159B (zh) * 2006-09-08 2015-02-11 周星工程股份有限公司 蝕刻裝置及使用該裝置之蝕刻方法
TWI603370B (zh) * 2016-03-11 2017-10-21 北京北方華創微電子裝備有限公司 Device for realizing impedance matching and power distribution and semiconductor processing device
TWI611735B (zh) * 2010-09-28 2018-01-11 Tokyo Electron Ltd 電漿處理裝置（一）
TWI614792B (zh) * 2015-12-29 2018-02-11 Advanced Micro Fab Equip Inc 電漿處理裝置及電漿處理方法
TWI645440B (zh) * 2016-04-20 2018-12-21 大陸商中微半導體設備（上海）有限公司 電漿處理裝置、熱電子產生器、電漿點燃裝置及其方法

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KR100753869B1 (ko) * 2006-05-22 2007-09-03 최대규 복합형 플라즈마 반응기
KR100761962B1 (ko) * 2006-06-20 2007-10-02 송석균 상압 플라즈마 발생장치
KR101206725B1 (ko) * 2006-07-26 2012-11-30 주성엔지니어링(주) 서로 다른 전위면 사이의 갭에 완충 절연재가 삽입된기판처리장치
US8223470B2 (en) * 2006-10-10 2012-07-17 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method to improve uniformity and reduce local effect of process chamber
KR100853626B1 (ko) * 2006-12-28 2008-08-25 주식회사 케이씨텍 플라즈마 증착장치 및 방법
KR20080100617A (ko) * 2007-05-14 2008-11-19 네스트 주식회사 플라즈마 소스 및 이를 이용한 플라즈마 챔버
KR20080102615A (ko) * 2007-05-21 2008-11-26 네스트 주식회사 멀티-모드 플라즈마 생성 방법 및 장치
KR100979186B1 (ko) * 2007-10-22 2010-08-31 다이나믹솔라디자인 주식회사 용량 결합 플라즈마 반응기
KR101446185B1 (ko) * 2008-01-03 2014-10-01 최대규 고효율 유도 결합 플라즈마 반응기
KR101463934B1 (ko) * 2008-06-02 2014-11-26 주식회사 뉴파워 프라즈마 혼합형 플라즈마 반응기
JP5097632B2 (ja) * 2008-07-11 2012-12-12 株式会社日立ハイテクノロジーズ プラズマエッチング処理装置
KR101013357B1 (ko) * 2008-07-23 2011-02-14 한국표준과학연구원 고전력 플라즈마 발생 장치
KR101019493B1 (ko) * 2008-10-22 2011-03-07 주식회사 케이씨텍 화학기상증착장치
KR101011341B1 (ko) * 2008-10-28 2011-01-28 주식회사 테스 플라즈마 발생장치
CN101754564B (zh) 2008-12-09 2014-02-19 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体加工设备
CN101754568B (zh) * 2008-12-22 2012-07-25 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体处理设备及其射频装置
JP5479867B2 (ja) * 2009-01-14 2014-04-23 東京エレクトロン株式会社 誘導結合プラズマ処理装置
KR101117670B1 (ko) * 2009-02-02 2012-03-07 주식회사 테라세미콘 유도결합형 플라즈마 발생소스 전극 및 이를 포함하는 기판처리 장치
KR101151419B1 (ko) 2010-07-30 2012-06-01 주식회사 플라즈마트 Ｒｆ 전력 분배 장치 및 ｒｆ 전력 분배 방법
US8264153B2 (en) * 2010-08-09 2012-09-11 Jehara Corporation Plasma source for large size substrate
JP5711953B2 (ja) * 2010-12-13 2015-05-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
CN102686004B (zh) * 2011-03-17 2015-05-13 中微半导体设备(上海)有限公司 用于等离子体发生器的可控制谐波的射频系统
US20130015053A1 (en) * 2011-07-12 2013-01-17 Varian Semiconductor Equipment Associates, Inc. Inductively coupled rf plasma source with magnetic confinement and faraday shielding
CN103959920B (zh) * 2011-09-16 2016-12-07 细美事有限公司 天线结构和等离子体生成装置
US9978565B2 (en) 2011-10-07 2018-05-22 Lam Research Corporation Systems for cooling RF heated chamber components
JP2013098177A (ja) * 2011-10-31 2013-05-20 Semes Co Ltd 基板処理装置及びインピーダンスマッチング方法
KR101504532B1 (ko) * 2012-03-09 2015-03-24 주식회사 윈텔 플라즈마 처리 방법 및 기판 처리 장치
KR101335303B1 (ko) * 2012-07-09 2013-12-03 엘아이지에이디피 주식회사 기판 처리 장치
CN103237405B (zh) * 2013-05-14 2015-05-06 哈尔滨工业大学 一体化等离子体发生装置
CN103237402B (zh) * 2013-05-14 2015-10-21 哈尔滨工业大学 大气等离子体加工装置
KR102175083B1 (ko) * 2013-10-15 2020-11-06 세메스 주식회사 플라즈마 발생 유닛 및 그를 포함하는 기판 처리 장치
CN104332379B (zh) * 2014-09-02 2017-12-19 清华大学 等离子体放电装置
KR102496724B1 (ko) * 2015-07-20 2023-02-06 한양대학교 산학협력단 플라스마 발생 장치
US10026638B2 (en) * 2016-12-15 2018-07-17 Taiwan Semiconductor Manufacturing Co., Ltd. Plasma distribution control
CN109913854B (zh) * 2017-12-12 2021-05-07 上海稷以科技有限公司 等离子化学气相沉积装置
KR102190794B1 (ko) 2018-07-02 2020-12-15 주식회사 기가레인 기계적으로 플라즈마 밀도를 제어하는 기판 처리 장치
US10600618B2 (en) 2018-08-07 2020-03-24 Semes Co., Ltd. Plasma generation apparatus, substrate treating apparatus including the same, and control method for the plasma generation apparatus
WO2020146034A1 (en) * 2019-01-08 2020-07-16 Applied Materials, Inc. Recursive coils for inductively coupled plasmas
KR102902526B1 (ko) * 2019-07-26 2025-12-19 주성엔지니어링(주) 기판처리장치 및 그의 인터락 방법
US11621147B2 (en) 2020-01-24 2023-04-04 Corning Incorporated Systems and methods for optimizing RF plasma power coupling
JP7489894B2 (ja) * 2020-10-20 2024-05-24 東京エレクトロン株式会社 プラズマ生成装置、プラズマ処理装置及びプラズマ処理方法
KR102427905B1 (ko) * 2020-12-21 2022-08-02 주식회사 테스 기판처리장치
WO2022146649A1 (en) * 2020-12-28 2022-07-07 Mattson Technology, Inc. Directly driven hybrid icp-ccp plasma source
KR102467966B1 (ko) * 2020-12-30 2022-11-17 한양대학교 산학협력단 하이브리드 플라즈마 발생 장치 및 하이브리드 플라즈마 발생 장치의 제어방법

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI473159B (zh) * 2006-09-08 2015-02-11 周星工程股份有限公司 蝕刻裝置及使用該裝置之蝕刻方法
US8917022B2 (en) 2008-05-22 2014-12-23 Emd Corporation Plasma generation device and plasma processing device
TWI555443B (zh) * 2008-05-22 2016-10-21 Emd Corp A plasma generating device and a plasma processing device
TWI611735B (zh) * 2010-09-28 2018-01-11 Tokyo Electron Ltd 電漿處理裝置（一）
TWI614792B (zh) * 2015-12-29 2018-02-11 Advanced Micro Fab Equip Inc 電漿處理裝置及電漿處理方法
TWI603370B (zh) * 2016-03-11 2017-10-21 北京北方華創微電子裝備有限公司 Device for realizing impedance matching and power distribution and semiconductor processing device
TWI645440B (zh) * 2016-04-20 2018-12-21 大陸商中微半導體設備（上海）有限公司 電漿處理裝置、熱電子產生器、電漿點燃裝置及其方法

Also Published As

Publication number Publication date
KR101007822B1 (ko) 2011-01-13
CN1577730A (zh) 2005-02-09
CN100411088C (zh) 2008-08-13
US7442273B2 (en) 2008-10-28
KR20050008960A (ko) 2005-01-24
TWI382448B (zh) 2013-01-11
US20050017201A1 (en) 2005-01-27

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