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WO2009005148A1 - 表面処理装置 - Google Patents

表面処理装置 Download PDF

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Publication number
WO2009005148A1
WO2009005148A1 PCT/JP2008/062198 JP2008062198W WO2009005148A1 WO 2009005148 A1 WO2009005148 A1 WO 2009005148A1 JP 2008062198 W JP2008062198 W JP 2008062198W WO 2009005148 A1 WO2009005148 A1 WO 2009005148A1
Authority
WO
WIPO (PCT)
Prior art keywords
surface treatment
treatment apparatus
high frequency
frequency power
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/062198
Other languages
English (en)
French (fr)
Inventor
Yuuki Koumura
Yasushi Shinno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Priority to US12/438,014 priority Critical patent/US20100193128A1/en
Priority to CN2008800011314A priority patent/CN101568997B/zh
Priority to JP2008552171A priority patent/JP4728405B2/ja
Publication of WO2009005148A1 publication Critical patent/WO2009005148A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

　電極を含む線路上で共振を発生させることが可能な表面処理装置は、ウェハ４が収容され、真空排気が可能な真空容器１と、真空容器１内に互いに対向して配置された上部電極３および下部電極５とを有している。表面処理装置は、上部電極３に整合回路１７を介して高周波電力を供給する高周波電源１６と、下部電極５に整合回路１９を介して高周波電力を供給する高周波電源１８とをさらに有している。表面処理装置は、下部電極５とグラウンドとの間に接続された共振調整部（共振回路）６０と、真空容器１内に処理ガスを供給する処理ガス供給機構（不図示）とをさらに有している。表面処理装置は、電極３，５の位相位置を調整する電極位相位置調整手段である電気長調整部５０，７０を備えている。
PCT/JP2008/062198 2007-07-04 2008-07-04 表面処理装置 Ceased WO2009005148A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/438,014 US20100193128A1 (en) 2007-07-04 2008-07-04 Surface treatment apparatus
CN2008800011314A CN101568997B (zh) 2007-07-04 2008-07-04 表面处理设备
JP2008552171A JP4728405B2 (ja) 2007-07-04 2008-07-04 表面処理装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007176287 2007-07-04
JP2007-176287 2007-07-04

Publications (1)

Publication Number Publication Date
WO2009005148A1 true WO2009005148A1 (ja) 2009-01-08

Family

ID=40226186

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/062198 Ceased WO2009005148A1 (ja) 2007-07-04 2008-07-04 表面処理装置

Country Status (4)

Country Link
US (1) US20100193128A1 (ja)
JP (1) JP4728405B2 (ja)
CN (1) CN101568997B (ja)
WO (1) WO2009005148A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017069209A (ja) * 2013-02-12 2017-04-06 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法、プラズマ処理方法及びプラズマ処理装置
JPWO2016017078A1 (ja) * 2014-07-28 2017-05-25 キヤノンアネルバ株式会社 成膜方法、真空処理装置、半導体発光素子の製造方法、半導体発光素子、半導体電子素子の製造方法、半導体電子素子、照明装置
TWI650792B (zh) * 2013-10-01 2019-02-11 美商蘭姆研究公司 控制射頻供應路徑之阻抗的系統及方法
WO2022230072A1 (ja) * 2021-04-27 2022-11-03 東京エレクトロン株式会社 成膜装置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103166595A (zh) * 2011-12-09 2013-06-19 北京北方微电子基地设备工艺研究中心有限责任公司 阻抗匹配器、半导体设备和阻抗匹配方法
US9230779B2 (en) * 2012-03-19 2016-01-05 Lam Research Corporation Methods and apparatus for correcting for non-uniformity in a plasma processing system
JP6249659B2 (ja) * 2013-07-25 2017-12-20 東京エレクトロン株式会社 プラズマ処理装置
US10580623B2 (en) 2013-11-19 2020-03-03 Applied Materials, Inc. Plasma processing using multiple radio frequency power feeds for improved uniformity
CN104752134B (zh) * 2013-12-29 2017-02-15 北京北方微电子基地设备工艺研究中心有限责任公司 一种反应腔室及等离子体加工设备
US20180175819A1 (en) * 2016-12-16 2018-06-21 Lam Research Corporation Systems and methods for providing shunt cancellation of parasitic components in a plasma reactor
JP7241961B2 (ja) * 2020-03-11 2023-03-17 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム
KR20230042824A (ko) * 2021-09-23 2023-03-30 삼성전자주식회사 플라즈마 제어 장치 및 플라즈마 처리 시스템

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11185998A (ja) * 1997-12-17 1999-07-09 Fron Tec:Kk プラズマ処理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0343500B1 (en) * 1988-05-23 1994-01-19 Nippon Telegraph And Telephone Corporation Plasma etching apparatus
US6214162B1 (en) * 1996-09-27 2001-04-10 Tokyo Electron Limited Plasma processing apparatus
US6562190B1 (en) * 2000-10-06 2003-05-13 Lam Research Corporation System, apparatus, and method for processing wafer using single frequency RF power in plasma processing chamber
JP4819244B2 (ja) * 2001-05-15 2011-11-24 東京エレクトロン株式会社 プラズマ処理装置
US20050069651A1 (en) * 2003-09-30 2005-03-31 Tokyo Electron Limited Plasma processing system
CN101630624B (zh) * 2003-12-18 2011-10-26 应用材料公司 双频rf匹配
JP4773079B2 (ja) * 2004-11-26 2011-09-14 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11185998A (ja) * 1997-12-17 1999-07-09 Fron Tec:Kk プラズマ処理装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017069209A (ja) * 2013-02-12 2017-04-06 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法、プラズマ処理方法及びプラズマ処理装置
TWI650792B (zh) * 2013-10-01 2019-02-11 美商蘭姆研究公司 控制射頻供應路徑之阻抗的系統及方法
JPWO2016017078A1 (ja) * 2014-07-28 2017-05-25 キヤノンアネルバ株式会社 成膜方法、真空処理装置、半導体発光素子の製造方法、半導体発光素子、半導体電子素子の製造方法、半導体電子素子、照明装置
KR101930281B1 (ko) * 2014-07-28 2018-12-18 캐논 아네르바 가부시키가이샤 성막 방법, 진공 처리 장치, 반도체 발광 소자의 제조 방법, 반도체 발광 소자, 반도체 전자 소자의 제조 방법, 반도체 전자 소자, 조명 장치
US11035034B2 (en) 2014-07-28 2021-06-15 Canon Anelva Corporation Film formation method, vacuum processing apparatus, method of manufacturing semiconductor light emitting element, semiconductor light emitting element, method of manufacturing semiconductor electronic element, semiconductor electronic element, and illuminating apparatus
WO2022230072A1 (ja) * 2021-04-27 2022-11-03 東京エレクトロン株式会社 成膜装置
JPWO2022230072A1 (ja) * 2021-04-27 2022-11-03
JP7698039B2 (ja) 2021-04-27 2025-06-24 東京エレクトロン株式会社 成膜装置

Also Published As

Publication number Publication date
CN101568997B (zh) 2011-03-30
JP4728405B2 (ja) 2011-07-20
JPWO2009005148A1 (ja) 2010-08-26
CN101568997A (zh) 2009-10-28
US20100193128A1 (en) 2010-08-05

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