200405406 (1) ' 玖、發明說明 【發明所屬之技術領域】 本發明係有關一供在半導體處理系統之作業空間使用 · 的氣體淸淨化裝置和使用同裝置的半導體處理系統。再 者’在此，半導體處理是指爲了實施在半導體晶圓或LCD 基板等之被處理基板上，利用預定圖案形成半導體層、絕 緣層、導電層等，藉此在該被處理基板上製造半導體裝 置、包括連接在半導體裝置之配線、電極等之構造物的各 鲁 種處理之意。 【先前技術】 於半導體裝置之製造方面，對被處理基板例如半導體 晶圓施行例如成膜處理、鈾刻處理等之各種半導體處理。 實行該等半導體處理之系統是採用例如包括真空處理裝置 等之半導體處理系統。於該種之半導體處理系統方面，例 如針對晶圓在真空環境下進行處理時，先將收容晶匣等之 · 搬運容器的晶圓放入到常壓（大氣壓）的搬送室內。使該晶 圓定位等之後’搬入到加載互鎖真空室內，且加載互鎖真 空室內爲真空環境。其次，經由該加載互鎖真空室、真空 環境下的搬送室而將晶圓搬入到處理室內。然後，於該處 . 理室內，在真空環境下對該晶圓施行預定的處理。 於此種處理系統中，必須針對晶圓有限度的阻止附著 導致良率降低的顆粒等。於是’例如在常壓環境下進行晶 圓搬送等的作業室例如淸淨室、搬送室等的上部’係配設 -5- (2) ' (2) '200405406 淸淨氣體供給裝置（氣體淸淨化裝置）。氣體淸淨化裝置係 具有：送風機、和配設在其下流的氣體過濾部（使用空氣 時作爲空氣過濾部的功能）。藉由氣體淸淨化裝置在室內 . 形成無塵度高的淸淨空氣之往下流動，且在搬送途中的晶 圓表面極力不附著顆粒等。此種技術例如揭示於日本特開 胃 平第11-63604號公報、特願第2002-137644號中。 第1 1圖係表示習知氣體淸淨化裝置之一例的槪略斷 面圖。該裝置係具有：送風機140、和設在該送風機140 φ 之下流的氣體過濾部1 4 1。該裝置係配設在例如處理系統 方面的搬送室等之作業室142上。可是按照本發明人等的 硏究，如後所述，發現於第 Π圖所示之氣體淸淨化裝 置、使用同裝置的處理系統中，會有氣體過濾的性能很不 穩定，氣體過濾壽命短，所形成之氣流的面內均勻性低等 的問題。 【發明內容】 · 本發明係可解決上述之先前技術問題之一點或複數 點，其目的在於提供一供在半導體處理系統之作業空間使 用的氣體淸淨化裝置、和使用同裝置的半導體處理系統。 本發明之第一觀點係爲一供半導體處理系統之作業空 _ 間使用的氣體淸淨化裝置，其特徵爲具備有： 限定與前述作業空間連通之氣體通路的構件； ^ 和輸送配設在前述氣體通路內之氣體的送風機；且前 述送風機係具有針對輸送前述氣體之方向而言，於直角之 -6- (3) (3)200405406 斷面產生面內不均勻之風速分佈的特丨生； 和以位於則述送風機之上流或下流的方式配設在前述 氣體通路內的整流構件；且前述整流構件係具有以補償前 . 述送風機之前述面內不均勻之風速分佈的方式所設定的面 內不均勻之數値口徑’且在此，前述整流構件之數値口徑 低的位置是配合前述送風機之風速高的位置； 和以位於前述送風機及前述整流構件之下流的方式配 設在前述氣體通路內的過濾部；且前述過濾部係具有除去 鲁 前述氣體中之顆粒的功能。 本發明之第二觀點係爲半導體處理系統，其特徵爲具 備有： 欲針對被處理基板施行半導體處理的處理室·， 和限定處理前述被處理基板之作業空間的構件； 和限定與前述作業空間連通之氣體通路的構件； 和輸送配設在前述氣體通路內之氣體的送風機；且前 述送風機係具有對輸送前述氣體之方向而言，於直角之斷 鲁 面產生面內不均勻之風速分佈的特性； 和以位於前述送風機之上流或下流的方式配設在前述 氣體通路內的整流構件；且前述整流構件係具有以補償前 述送風機之前述面內不均勻之風速分佈的方式所設定的面 _ 內不均勻之數値口徑，且在此，前述整流構件之數値口徑 低的位置是配合前述送風機之風速高的位置； 和以位於前述送風機及前述整流構件之下流的方式配 設在前述氣體通路內的過濾、部；且前述過濾、部係具有除去 (4) (4)200405406 前述氣體中之顆粒的功能。 【實施方式】 _ [用以實施發明的最佳形態] 本發明人等’於本發明之開發過程中，針對第丨丨圖 所不的習知氣體淸淨化裝置、使用同一裝置的處理系統之 問題進行硏究。其結果，得到以下的見解。 於第1 1圖所示的裝置中’依賴送風機丨4 〇的特性， 鲁 在送風機140的下流，如箭頭所示，發生面內不均勻的風 速分佈。此種在送風路之斷面的面內不均勻之風速分佈， 特別是送風機140爲螺旋槳式鼓風機的時候，會有顯著呈 現的傾向。該螺旋槳式鼓風機之情形下，會因旋轉葉片的 形狀等而異，但典型上會形成如以下之面內不均勻的風速 分佈。亦即，對應於旋轉葉片之葉片部之區域部分的風速 是最強的。對應於旋轉葉片之中央部之區域部分的風速會 稍微減弱。對應於旋轉葉片之周圍之區域部分的風速會更 肇 弱。 一方面，氣體過濾部141係例如具備除去ULPA (Ultra Low Penetration Air)或 HEPA(High Efficiency Particulate Air)過濾器等之顆粒的顆粒過濾器143。若來 . 自送風機140的空氣以面內不均勻的風速分佈通過顆粒過 濾器1 43，如第12圖所示，於流速較快的部分，顆粒P 易局部性堆積產生堵塞。因此，顆粒過濾器1 43的性能很 不穩定壽命短，不得己要提早更換。而顆粒過濾器143之 -3 * (5) (5) 200405406 下方的風速變得很不均勻的緣故，會引發擾亂作業室142 的氣流。其結果，顆粒P往上揚，作業室1 42內的淸淨度 降低。 而且，氣體過濾部1 4 1也有例如除去有機物等之化學 性污染物質之化學式過濾的情況。此時，於流速較快的部 分會吸附許多有機氣體等之化學性污染物質的緣故，若超 過其吸附容許量的話，有發生化學性污染物質通過之虞。 因此，化學式過濾器的性能很不穩定壽命短，不得己要提 期更換。 於以下針對根據此種見解所構成的本發明之實施形態 參考圖面做明。再者，於以下說明中，於具有略同一功能 及構成的構成要素中，附上同 符號，且只進行需要重複 說明的情形。 第1圖係表示具備有關本發明之實施形態的氣體淸淨 化裝置的半導體處理系統的槪略構成圖。於第1圖中，半 導體處理系統1係作爲所謂的多處理室型之真空處理系統 所構成。處理系統1係具有：一片片收容被處理基板例如 半導體晶圓W並施行預定處理例如成膜處理、蝕刻處理 等之可設在預定之真空度的複數個例如四個的處理室 2a、2b、2c、2d。該些處理室係連接於可設定在預定之真 空度的共通真空搬送室3。真空搬送室3係透過具有可設 定在預定之真空度的加載互鎖功能之加載互鎖真空室 4a、4b，而連接於在常壓（大氣壓）側的作業室的大氣搬送 (6) (6)200405406 真空搬送室3是形成平面略六角形，於其外周的四個 面是透過各個閘型閥 Gl、G2、G3、G4而連接處理室 2a、2b、2c、2d。在大氣搬送室5之外周的其他兩個面是 · 透過各個閘型閥G5、G6而連接作爲搬出、搬入晶圓用之 通路的兩個加載互鎖真空室4a、4b。而在兩加載互鎖真 空室4a、4b是透過閘型閥G7、G8而連接在大氣搬送室 (作業室）5。於真空搬送室3內配設可伸張、昇降及迴旋 的搬送支臂機構6。搬送支臂機構6係供在各加載互鎖真 φ 空室4a、4b及各處理室2a、2b、2c、2d間搬送晶圓 W 而使用。 大氣搬送室5係例如藉由不銹鋼等之金屬製的横長箱 狀框體7所區隔形成。第2圖係表示大氣搬送室5的槪略 立體圖。亦如第2圖所示，在大氣搬送室5的前面部形成 供搬出、搬入晶圓 W之一個或複數個圖示例爲八個搬 入、搬出口 8a、8b、8c。並在大氣搬送室 5的前面部對 應於各搬入、搬出口 8a、8b、8c，而配設著供載置多段 β 收納複數片晶圓之運搬容器的載具（亦稱晶匣）9的載置台 10a、10b、10c。載具9係由在上下方向以預定間隔可收 納13片或25片左右之例如直徑3 00mm之晶圓的容器所 製成。載具9係可形成附有塑膠製蓋體的運搬容器之所謂 . 密閉式載具。於搬入、搬出口 8a、8b、8c係配設用以拆 裝開關門、密閉式載具之蓋體的蓋體拆裝機構等。 ^ 在大氣搬送室5內配設具有搬送晶圓W之搬送支臂 14的搬送機構11。大氣搬送室5爲横長的緣故，搬送機 -10- (7) - (7) -200405406 構11係可沿著延長至長邊方向（左右方向）的導軌12而移 動地配設大氣搬送室5內的中心部。於大氣搬送室5之一 端係配設使晶圓W定位之定位機構的定方位器1 3。搬送 ‘ 機構11係使用於在載置台10a、10b、10c上的載具9、 定方位器13及加載互鎖真空室4a、4b間搬送晶圓W。 在大氣搬送室5之上部係於大氣搬送室5內以圖示例 配設三個欲形成無塵度高的淸淨空氣之往下流動的氣體淸 淨化裝置1 5。第3圖係表示氣體淸淨化裝置1 5之一的斷 φ 面圖。如第8圖所示，氣體淸淨化裝置1 5係具有：送風 機16、和配設在其下流的氣體過濾部17(使用空氣時作爲 空氣過濾的功能），作爲鼓風機、過濾元件所構成。 在送風機1 6和氣體過濾部1 7之間配設欲令因送風機 16之面內不均勻的風速分佈形成面內略均勻之風速分佈 的整流構件1 8。整流構件1 8係設在氣體過濾部1 7之上 流，將來自送風機16之面內不均勻的風速分佈之風力（空 氣流）改善到面內均勻之風速分佈而使其通過氣體過濾部 · 1 7。在送風機1 6和整流構件1 8之間係形成間隙或空間 S a的同時，至少在氣體過濾部1 7和整流構件1 8之間形 成1 mm左右的間隙S b，但在達到風速或風速分佈之面內 均勻化上很理想。 氣體淸淨化裝置1 5係具有筒狀例如角筒狀的外殼 19，且在該外殼19內之上部較好爲上部之中央部安裝送 · 風機16。在外殼19的頂面係於中央形成圓形的通風口 20。在外殼19內的頂面是以與通風口 20連通的方式配設 -11 - (8) (8)200405406 略與其通風口 2 0相同之開口徑的圓筒狀之鼓風機機殼 2 1。送風機1 6主要是由旋轉葉片2 2、和旋轉驅動旋轉葉 片2 2的電動馬達2 3所構成。電動馬達2 3係透過複數根 支持桿2 4而安裝在鼓風機機殼2 1內的略中央部。 氣體過濾部1 7係具有：除去有機物等之化學性污染 物質的化學式過濾器17 a、和除去 ULPA(Ultra Low Penetration Air)或 HEPA(High Efficiency Particulate Air) 過濾器等之顆粒的顆粒過濾器1 7 b。化學式過濾器1 7 a和 φ 顆粒過濾器1 7 b係依序配置在送風方向爲佳。再者，於本 實施形態中，氣體淸淨化裝置1 5係配設在大氣搬送室5 的緣故，顆粒過濾器1 7 b希望使用除去顆徑基準嚴格的 ULPA過濾器。 第7圖係表示化學式過爐器17a之槪略平面圖。如第 7圖所示，化學式過濾器1 7 a係具有蜂窩狀地形成例如吸 附活性碳之吸附劑2 5 a的無機纖維紙的過濾本體2 5。過 濃本體2 5係利用例如金屬製之方形的框體2 6而保持。一 方面，顆粒過濾器1 7b係具有例如第3圖斷面所示之蛇腹 狀地形成無機纖維紙的過濾本體2 7。過濾本體2 7係利用 例如金屬製之方形的框體28而保持。 化學式過濾器17a之框體26及顆粒過濾器17b之框 體28係形成與外殼19略相同口徑，構成外殼19的一部 分。在顆粒過濾器17b的框體28之上載置化學式過濾器 17a的框體26並用螺栓29連結。在外殼19之下部開口 端係形成載載在化學式過濾器17a之框體26上的凸緣 -12- 200405406 Ο) 30。在化學式過濾器17a之框體26上載置外殼19的凸緣 30並用螺栓3 1連結。在化學式過濾器17a的框體26和 外殼19的凸緣3 0之間介設並挾持整流構件1 8的周縁 部。氣體淸淨化裝置1 5係以配設在筒狀之外殼1 9內的狀 態而構成送風機1 6、整流構件1 8及氣體過濾部1 7。 整流構件1 8係具有以補償送風機1 6之面內不均勻的 風速分佈（改善到略均勻的風速分佈）之方式所設定的面內 不均勻之數値口徑。第4圖係表示整流構件1 8的槪略平 面圖。如第4圖所示，整流構件1 8係由全面具有使氣體 通過之複數個開口例如孔32的平板（整流板）33所製成。 孔3 2的尺寸乃如後所述，以整流構件1 8之數値口徑愈低 位置愈小的方式所設定的。整流構件1 8係由在金屬製的 平板開設複數個孔的冲孔金屬板製成爲佳。但是整流構件 1 8也可樹脂製的平板開設複數個孔。於本實施形態中， 整流構件1 8也可稱爲整流板。 具體而言，旋轉葉片型之送風機16係針對氣體輸送 到外殼19內之下流的方向，於直角的斷面具有產生如下 述之面內不均勻的風速分佈之特性。亦即，對應於旋轉葉 片22之葉片部的區域部分之風速是最強的。對應於旋轉 葉片22之中央部的區域部分之風速會稍微減弱。對應於 旋轉葉片22之周圍的區域部分之風速會更弱。 有鑑於此種送風機1 6的特性，在整流構件1 8的平板 3 3以下面形態形成孔。亦即，在對應於旋轉葉片2 2之葉 片部的區域形成複數個小口徑的孔亦即小孔32a。在對應 -13- (10) (10)200405406 於旋轉葉片22之中央部的區域形成複數個稍大口徑的孔 亦即中孔32b。在對應於旋轉葉片22之周圍的區域形成 複數個較大口徑的孔亦即大孔32c。藉此在氣體過濾部 1 7，如第3圖箭頭所示，以面內均勻的風速分佈通過空 氣。因此能防止氣體過濾部1 7的局部性堵塞，還可達到 氣體過濾部1 7之性能的穩定化及延長壽命（耐久性提 局）。 在大氣搬送室5的頂面形成供導入淸淨空氣的開口部 修 3 4。以連通開口部3 4和氣體淸淨化裝置1 5之外殼1 9之 內部的方式在大氣搬送室5的頂面設置氣體淸淨化裝置 15。顆粒過濾器17b的框體28是載置在大氣搬送室5的 頂面並用螺栓3 5連結。藉此，氣體淸淨化裝置1 5會安裝 固定在大氣搬送室5的頂面。 若以上爲要件，有關本實施形態之氣體淸淨化裝置 15係具備有：送風機16、和設在該送風機16之下流的氣 體過濾部1 7，在送風機1 6和氣體過濾部1 7之間，配設 鲁 有欲令利用送風機16之面內不均勻的風速分佈形成面內 略均勻之風速分佈的整流構件1 8。因此能防止氣體過濾 部1 7之局部性堵塞，還可達到氣體過濾部1 7之性能的穩 定化及延長壽命。而且顆粒過濾器17b之下方的風速很均 . 勻緣故，就不會引發擾亂大氣搬送室5的氣流。其結果， 顆粒不易往上揚，就能維持大氣搬送室5內的淸淨度。 氣體過濾部1 7係組合化學式過濾器和顆粒過濾器爲 佳’但任一個均可。例如氣體過濾部只有顆粒過濾器時， -14- (11) ~ (11) ~200405406 於初期不會發生顆粒通過，也不會發生局部性堆積顆粒而 堵塞。因此作爲顆粒過潇器之性能很穩定並可延長壽命、 延長更換時間。而氣體過濾部只有化學式過濾時，有機氣 體等之化學性污染物質會分散而吸附的關係，並無超過吸 附容許量而發生通過化學性污染物質之虞。因此作爲化學 式過濾之性能很穩定並可延長壽命、延長更換時間。 送風機16是由螺旋槳式鼓風機製成的緣故，可達到 與離心鼓風機等之其他鼓風機不同構造的簡單化及裝置小 φ 型化。一方面，螺旋槳式鼓風機易發生之面內不均勻之風 速分佈的問題可經由整流構件1 8而解決。送風機1 6、整 流構件1 8及氣體過濾部1 7是配設在筒狀外殼1 9內的緣 故，裝置可單元化及小型化。因此，可達到對作業室例如 淸淨室、大氣搬送室5等提高安裝性。整流構件1 8係由 具有複數個開口例如孔3 2的平板所製成，對應風速分佈 而改變數値口徑。因此能以簡單的構造將面內不均勻的風 速分佈輕易地改變爲面內略均勻的風速分佈。 · 氣體過濾部1 7係依序在送風方向配置化學式過濾器 17a和顆粒過濾器17b而構成。因此能除去浮遊在空氣中 的化學性污染物質、顆粒而提高無塵度。特別是可用顆粒 過濾器17b來捕捉通過化學式過濾部17a的顆粒。再者， 顆粒過濾器17b可爲ULPA過濾器、HEPA過濾器、或同 樣功能及構造的其他顆粒除去用過濾器之任一者。 而且於有關本發明之實施形態的半導體處理系統（真 空處理系統）1中，在進行晶圓W搬送等之常壓作業室的 -15- (12) (12)200405406 大氣搬送室5之頂面配設氣體淸淨化裝置1 5。因此，能 大氣搬送室5內很穩定的形成無塵度高之淸淨空氣往下流 動。因此可防止在晶圓W之真空處理系統1內附著顆粒 等而提高良率。 第5圖及第6圖係表示可在第3圖所示之氣體淸淨化 裝置15使用的整流構件之變更例18X的槪略平面圖及斷 面圖。有關該變更例之整流構件1 8X也具有以補償送風 機16之面內不均勻之風速分佈（改善到略均勻的風速分佈） 的方式所設定的面內不均勻之數値口徑。但是與第4圖所 示之整流構件1 8相異，該整流構件1 8X是以通過氣體之 孔3 2的密度低的方式設定在整流構件1 8 X的數値口徑低 的位置。爲了滿足該要件，整流構件1 8X係具備有：全 面地均等具有通過氣體之同一尺寸的複數個孔32的平板 (整流板）33X、和對應於整流構件18X的數値口徑而塞住 複數個孔32之一部分的環狀阻板36。 具體而言，於平板33X以8.5mm間距配設多數個例 如直徑2mm的孔32。在該平板33X上利用焊接等安裝內 徑130mm外徑180mm的圓環狀阻板36。 利用如此構成的整流構件1 8X就可用簡單的構造將 面內不均勻的風速分佈輕易地改變爲面內略均勻的風速分 佈。而且藉由具有此種整流構件1 8X的氣體淸淨化裝置 15’也可在半導體處理系統（真空處理系統}1的大氣搬送 室5內很穩定的形成無塵度高的淸淨空氣往下流動。因此 可防止在晶圓W的真空處理系統1內附著顆粒等而提高 -16- (13) (13)200405406 良率。 第8圖係表示有關本發明之其他實施形態的氣體淸淨 化裝置45的槪略線圖。該氣體淸淨化裝置45也可配設在 第1圖所示之處理系統1的大氣搬送室5之頂面而使用。 氣體淸淨化裝置4 5係上流側具有：送風機1 6、整流構件 18X、顆粒過濾器17b及整流構件46，且該些是安裝在外 殻19。送風機16、整流構件18X、顆粒過濾器17b及外 殼19實際上是與參照第1圖至第6圖而描述的對應構件 相同。一方面，配設在最下流的整流構件46係與整流構 件18或18X相異，具有面內均勻的數値口徑。具體而 言，整流構件46係由全面均等地具有通過氣體之相同尺 寸的複數個孔的平板（整流板）所製成。整流構件46係由 在金屬製平板開設複數個孔的冲孔金屬板製成爲佳。 如前所述，顆粒過濾器1 7b係具有例如第8圖斷面所 示蛇腹狀地形成無機纖維紙的過濾本體27。因此，連輸 入到顆粒過濾器17b之空氣的風速分佈也是面內均勻，於 顆粒過濾器17b之輸出可能會發生由於來自過濾本體27 之蛇腹狀之風速分佈很細的不均勻。配設在最下流的整流 構件46係藉由取消此種風速分佈很細的不均勻，就能形 成面內均勻性更高的空氣往下流動。 第9圖係表示有關本發明之另一其他實施形態的氣體 淸淨化裝置5 5的槪略線圖。該氣體淸淨化裝置5 5係供在 例如塗佈光阻劑的系統內形成淸淨空氣往下流動所使用。 氣體淸淨化裝置55係從上流側具有化學式過濾器lh、 -17- 200405406 ' (14) 整流構件18X、送風機16、顆粒過濾器17b，該些是安裝 在外殼1 9。雖然適當設定該些構件的輪廓尺寸，但功能 性上實際是與參照第1圖至第8圖所描述的對應構件相 . 同。 如該實施形態所示，整流構件1 8X(或第4圖所示的 整流構件1 8 )也可配設在送風機1 6的輸入側。此時，可 補償送風機16之面內不均勻的風速分佈而形成略均勻的 風速分佈。 第1 〇圖係表示具備有關本發明之另一其他實施形態 的氣體淸淨化裝置的半導體處理系統的槪略線圖。該半導 體處理系統6 1係在無塵室6 0內更具有形成隔離區分的作 業空間65之隔間頂面62及隔間側壁63。在作業空間65 內配設供對LCD基板或半導體晶圓等施行半導體處理的 處理室66。在隔間頂面62配設在作業空間65內供形成 無塵度高的淸淨空氣往下流動的氣體淸淨化裝置68。更 在隔間側壁63配設一供在作業空間65所使用之後的空氣 參 淸淨化並回到無塵室60內的氣體淸淨化裝置69。 氣體淸淨化裝置68、69基本上可爲與第8圖所示之 氣體淸淨化裝置1 5相同之構造的緣故，以下參照第3圖 至第6圖內的符號做說明。配設在隔間頂面62之氣體淸 . 淨化裝置68的整流構件18或18X(參照第4圖至第6圖 参照）的作用是與氣體淸淨化裝置1 5的情形相同。亦即， 氣體淸淨化裝置68的整流構件18或18X會防止氣體過 濾部1 7的局部性堵塞，且達到氣體過濾部1 7之性能的穩 -18- (15) (15)200405406 定化及延長壽命。而令顆粒過濾器17b之下方的風速均勻 化，不會在作業空間65內引發擾亂氣流。一方面，配設 在隔間側壁63的氣體淸淨化裝置69之整流構件1 8或 18X(參照第4圖至第6圖）的作用會防止氣體過濾部17的 局部性堵塞，且達到氣體過濾部1 7之性能的穩定化及延 長壽命。 以上經由圖面詳述本發明的實施形態，但本發明並不 限於前述實施形態，在不脫離本發明之主旨範圍可做各種 設計變更等。有關本發明的處理系統可爲常壓處理系統。 有關本發明的淸淨空氣供給裝置也可應用於檢查被處理基 板的檢査裝置至檢査室（作業室）。而被處理基板除半導體 晶圓以外可爲 LCD基板、玻璃基板等。整流構件是以在 平板開設複數個孔（開口）爲佳，但也可爲由對應送風機的 風速分佈改變網目之數値口徑的網目織物所製成。 [產業上的可利用性] 若按照有關本發明之實施形態的體淸淨化裝置和使用 同裝置的半導體處理系統，就能解決習知技術之問題，亦 即氣體過濾之性能不穩定、氣體過濾之壽命短、形成的氣 流之面內均勻性低等之問題的一點或複數點。 【圖式簡單說明】 第1圖係表示具備有關本發明之實實施形態的氣體淸 淨化裝置之半導體處理系統的槪略構成圖。 -19- * (16) (16)200405406 第2圖係表示第1圖所示的處理系統的大氣搬送室的 槪略立體圖。 第3圖係表示配設在第2圖所示的大氣搬送室之氣體 、 淸淨化裝置之一的斷面圖。 第4圖係表示第3圖所示的氣體淸淨化裝置之整流構 件的槪略平面圖。 第5圖係表示可在第3圖所示之氣體淸淨化裝置使用 的整流構件之變更例的槪略平面圖。 0 第6圖係第5圖所示之整流構件的斷面圖。 第7圖係表示第3圖所示之氣體淸淨化裝置的化學式 過濾之槪略平面圖。 第8圖係表示有關本發明之其他實施形態的氣體淸淨 化裝置的槪略線圖。 第9圖係表示有關本發明之另一其他實施形態的氣體 淸淨化裝置的槪略線圖。 第1 〇圖係表示具備有關本發明之另一其他實施$ _ β 的氣體淸淨化裝置的半導體處理系統的槪略線圖。 第1 1圖係表示習知之氣體淸淨化裝置之一例@ % 斷面圖。 第1 2圖係表示顆粒過濾器之集塵狀態的槪@ ® · 圖。 【符號說明】 140:送風機 …20- (17) (17)200405406 1 4 1 :氣體過濾部 143:顆粒過濾器 1 4 2 ·.作業室 - 1 :半導體處理系統 2a、2b、2c、2d:處理室 3:真空搬送室 4a、4b:加載互鎖真空室 5:大氣搬送室 9 6:搬送支臂機構200405406 (1) 玖 Description of the invention [Technical field to which the invention belongs] The present invention relates to a gas purge purification device for use in a working space of a semiconductor processing system and a semiconductor processing system using the same device. Here, 'semiconductor processing' refers to manufacturing a semiconductor layer, an insulating layer, a conductive layer, and the like using a predetermined pattern in order to implement a semiconductor wafer, an LCD substrate, or the like on a substrate to be processed, thereby manufacturing a semiconductor on the substrate to be processed. Various treatments of devices, structures including wirings and electrodes connected to semiconductor devices. [Prior Art] In the manufacture of semiconductor devices, various semiconductor processes such as film formation processes and uranium etching processes are performed on substrates to be processed, such as semiconductor wafers. A system for performing such semiconductor processing is a semiconductor processing system including, for example, a vacuum processing apparatus. For this type of semiconductor processing system, for example, when processing wafers in a vacuum environment, first put the wafers in the transfer container that contains the wafer cassette into a normal-pressure (atmospheric) transfer chamber. After the wafer is positioned and the like, it is moved into a load-locked vacuum chamber, and the load-locked vacuum chamber is in a vacuum environment. Next, the wafer is transferred into the processing chamber through the load-locking vacuum chamber and the transfer chamber in a vacuum environment. Then, in the processing chamber, the wafer is subjected to a predetermined process in a vacuum environment. In such a processing system, it is necessary to prevent the wafers from adhering to a limited extent to prevent particles and the like from lowering the yield. Therefore, 'for example, the upper part of an operation room such as a wafer transfer room and a transfer room under normal pressure environment' is provided with -5- (2) '(2)' 200405406 'a clean gas supply device (gas) Purification device). The gas radon purification device is provided with a blower and a gas filter section (functioning as an air filter section when air is used) disposed downstream thereof. A gas purge device is used in the room. The purge air, which has a high degree of cleanliness, flows downwards, and no particles are attached to the surface of the wafer during transportation. Such a technique is disclosed in, for example, Japanese Unexamined Patent Application No. 11-63604 and Japanese Patent Application No. 2002-137644. Fig. 11 is a schematic sectional view showing an example of a conventional gas radon purification device. The device includes a blower 140 and a gas filter unit 141 provided below the blower 140 φ. This device is arranged in a work room 142 such as a transfer room in a processing system. However, according to the research of the present inventors, as will be described later, it is found that in the gas purge purification device shown in Fig. Π and the processing system using the same device, the gas filtration performance is unstable and the gas filtration life is short. , The in-plane uniformity of the formed airflow is low, and the like. [Summary of the Invention] The present invention is to solve one or more of the above-mentioned problems in the prior art, and an object thereof is to provide a gas purge purification device for use in a working space of a semiconductor processing system and a semiconductor processing system using the same device. A first aspect of the present invention is a gas purge purification device for a working space of a semiconductor processing system, which is characterized by having: a member that defines a gas passage that communicates with the working space; The blower for the gas in the gas path; and the aforementioned blower has a special distribution of the in-plane wind speed distribution at the right angle of -6- (3) (3) 200405406 section for the direction of conveying the aforementioned gas; And a rectifying member disposed in the gas path in an upstream or downstream manner of the blower; and the rectifying member has a surface set to compensate for an uneven wind speed distribution in the aforementioned surface of the blower. The number of non-uniform internal diameters' is here and the position where the number of small diameters of the rectifying member is low is a position corresponding to the high wind speed of the blower; The filtering part in the passage; and the filtering part has a function of removing particles in the gas. A second aspect of the present invention is a semiconductor processing system, comprising: a processing chamber for performing semiconductor processing on a substrate to be processed; and a member for limiting a working space for processing the substrate to be processed; A component of a connected gas passage; and a blower for conveying a gas disposed in the gas passage; and the blower has a non-uniform wind speed distribution in a plane at a right-angled cross section for the direction of conveying the gas. Characteristics; and a rectifying member disposed in the gas path upstream or downstream of the blower; and the rectifying member has a surface set to compensate for uneven wind speed distribution in the surface of the blower_ The number of non-uniform inner diameters is smaller than the diameter of the rectifying member, and the position of the lower number of the rectifying members is higher than the speed of the air blower; and the air is disposed downstream of the air blower and the rectifying member. Filters and parts in the passage; and the aforementioned filters and parts have removal (4) (4) 2004054 06 Function of particles in the aforementioned gas. [Embodiment] _ [Best Mode for Implementing the Invention] During the development process of the present invention, the present inventors, for the conventional gas radon purification device not shown in Fig. Investigate the problem. As a result, the following findings were obtained. In the device shown in FIG. 11 ', depending on the characteristics of the blower 丨 4, Lu, as shown by the arrow in the downstream of the blower 140, has an uneven wind speed distribution in the plane. Such uneven wind speed distribution in the plane of the cross section of the air supply path, especially when the air blower 140 is a propeller blower, tends to show a significant tendency. In the case of this propeller-type blower, it varies depending on the shape of the rotating blades, etc., but typically a non-uniform wind speed distribution is formed as follows. That is, the wind speed of the area portion corresponding to the blade portion of the rotating blade is the strongest. The wind speed of the area portion corresponding to the central portion of the rotating blade is slightly reduced. The wind speed corresponding to the part of the area around the rotating blade will be weaker. On the other hand, the gas filtering unit 141 is, for example, a particulate filter 143 that removes particles such as a ULPA (Ultra Low Penetration Air) or a HEPA (High Efficiency Particulate Air) filter. The air from the self-ventilating fan 140 passes through the particulate filter 1 43 at an uneven wind speed distribution in the plane. As shown in FIG. 12, at a portion where the flow velocity is high, the particles P are likely to be locally accumulated and clogged. Therefore, the performance of the particulate filter 143 is very unstable and the life is short, so it must not be replaced early. And the -3 * (5) (5) 200405406 of the particulate filter 143 becomes very uneven, which causes the airflow in the working chamber 142 to be disturbed. As a result, the particles P rise, and the cleanliness in the working chamber 142 decreases. In addition, the gas filtration unit 141 may be chemically filtered to remove chemically polluted substances such as organic substances. At this time, chemically polluting substances such as many organic gases are adsorbed at a portion having a high flow rate. If the adsorption allowance is exceeded, there is a risk that the chemically polluting substances will pass through. Therefore, the performance of the chemical filter is very unstable and the life is short. An embodiment of the present invention constituted based on such findings will be described below with reference to the drawings. In addition, in the following description, the same reference numerals are attached to constituent elements having substantially the same function and structure, and only cases where repetitive description is required will be performed. Fig. 1 is a schematic configuration diagram showing a semiconductor processing system including a gas radon purification device according to an embodiment of the present invention. In FIG. 1, the semiconductor processing system 1 is configured as a so-called multi-processing chamber type vacuum processing system. The processing system 1 includes a plurality of processing chambers 2a, 2b, for example, four processing chambers 2a, 2b, which can hold a substrate to be processed, such as a semiconductor wafer W, and perform a predetermined process such as a film formation process, an etching process, and the like at a predetermined vacuum degree. 2c, 2d. These processing chambers are connected to a common vacuum transfer chamber 3 which can be set to a predetermined vacuum degree. The vacuum transfer chamber 3 is an atmospheric transfer (6) (6) connected to the working chamber on the atmospheric pressure (atmospheric pressure) side through the load interlocking vacuum chambers 4a and 4b having a load interlock function that can be set at a predetermined vacuum degree. 200405406 The vacuum transfer chamber 3 is formed in a substantially hexagonal plane, and the four surfaces on its outer periphery are connected to the processing chambers 2a, 2b, 2c, and 2d through the gate valves G1, G2, G3, and G4. The other two surfaces on the outer periphery of the atmospheric transfer chamber 5 are two load-locked vacuum chambers 4a and 4b connected to each other through the gate valves G5 and G6 as passages for carrying out and loading wafers. The two loading interlocking vacuum chambers 4a and 4b are connected to the atmospheric transfer chamber (work chamber) 5 through gate valves G7 and G8. In the vacuum transfer chamber 3, a transfer arm mechanism 6 capable of stretching, lifting, and turning is provided. The transfer arm mechanism 6 is used for transferring the wafer W between the load-locking true φ empty chambers 4a and 4b and the processing chambers 2a, 2b, 2c, and 2d. The atmospheric transfer chamber 5 is formed by being partitioned by a horizontally long box-like frame 7 made of metal such as stainless steel. FIG. 2 is a schematic perspective view showing the atmospheric transfer chamber 5. As shown in FIG. As shown in FIG. 2, one or a plurality of examples of wafers W formed in the front portion of the atmospheric transfer chamber 5 for loading and unloading wafers are eight loading and unloading ports 8a, 8b, and 8c. The front part of the atmospheric transfer room 5 corresponds to each of the loading and unloading ports 8a, 8b, and 8c, and a carrier (also referred to as a cassette) 9 for mounting a multi-segment β transport container for multiple wafers is provided. The mounting tables 10a, 10b, and 10c. The carrier 9 is made of a container capable of accommodating 13 or 25 wafers having a diameter of, for example, 300 mm at a predetermined interval in the up-down direction. The carrier 9 is a so-called .closed carrier that can form a transport container with a plastic lid. A cover disassembling mechanism for disassembling the door of the switch door and the cover of the closed carrier is provided at the loading and unloading ports 8a, 8b, and 8c. ^ A transfer mechanism 11 having a transfer arm 14 for transferring wafers W is arranged in the atmospheric transfer chamber 5. Atmospheric transfer room 5 is horizontally long. For transporters -10- (7)-(7) -200405406, the structure 11 series is equipped with an atmospheric transfer room 5 that can be moved along the guide rail 12 extending to the longitudinal direction (left-right direction). Inside the center. An azimuth device 13 is provided at one end of the atmospheric transfer chamber 5 and a positioning mechanism for positioning the wafer W is provided. Transfer ‘The mechanism 11 is used to transfer wafers W between the carrier 9, the positioner 13, and the load-locking vacuum chambers 4 a and 4 b on the mounting tables 10 a, 10 b, and 10 c. The upper part of the atmospheric transfer room 5 is tied in the atmospheric transfer room 5 as an example. Three gas purifying devices 15 are provided to flow downward to form a high degree of clean air. Fig. 3 is a sectional φ sectional view showing one of the gas radon purification devices 15; As shown in Fig. 8, the gas radon purification device 15 includes a blower 16 and a downstream gas filter 17 (function as an air filter when air is used), and is constituted as a blower and a filter element. A rectifying member 18 is provided between the blower 16 and the gas filtering portion 17 so that the uneven wind speed distribution in the plane of the blower 16 forms a slightly uniform wind speed distribution in the plane. The rectifying member 18 is provided above the gas filter 17 to improve the wind (air flow) from the uneven wind speed distribution in the plane of the blower 16 to the uniform wind speed distribution in the plane and pass it through the gas filter 1. 7. When a gap or space S a is formed between the blower 16 and the rectifying member 18, a gap S b of about 1 mm is formed at least between the gas filter 17 and the rectifying member 18, but when the wind speed or wind speed is reached, Ideal for in-plane uniformity of distribution. The gas radon purification device 15 has a cylindrical casing 19, for example, a rectangular cylindrical casing, and an air blower 16 is attached to the upper portion of the casing 19, preferably the upper central portion. A circular vent 20 is formed on the top surface of the casing 19 at the center. The top surface in the casing 19 is arranged in communication with the ventilation opening 20 -11-(8) (8) 200405406 A cylindrical blower casing 21 having the same opening diameter as its ventilation opening 2 0. The blower 16 is mainly composed of a rotating blade 2 2 and an electric motor 2 3 that rotationally drives the rotating blade 22. The electric motor 2 3 is installed at a substantially central portion in the blower casing 21 through a plurality of support rods 2 4. The gas filter unit 17 is a particle filter 1 having a chemical filter 17 a for removing chemical pollutants such as organic substances, and particles for removing ULPA (Ultra Low Penetration Air) or HEPA (High Efficiency Particulate Air) filters. 7 b. The chemical filter 17 a and the φ particle filter 17 7 b are preferably arranged in the air supply direction in order. Furthermore, in this embodiment, since the gas purge purification device 15 is disposed in the atmospheric transfer chamber 5, it is desirable to use a ULPA filter having a strict particle diameter removal standard for the particulate filter 17b. Fig. 7 is a schematic plan view showing the chemical furnace 17a. As shown in Fig. 7, the chemical filter 17a is a filter body 25 having an inorganic fiber paper formed in a honeycomb shape such as an adsorbent 2a that adsorbs activated carbon. The over-concentrated body 25 is held by, for example, a metal square frame 26. On the one hand, the particulate filter 17b is a filter body 27 having an inorganic fiber paper formed in a bellows shape as shown in the cross section in FIG. The filter body 27 is held by a metal square frame 28, for example. The frame 26 of the chemical filter 17a and the frame 28 of the particulate filter 17b are formed to have a diameter almost the same as that of the case 19, and constitute a part of the case 19. The frame body 26 of the chemical filter 17a is placed on the frame body 28 of the particle filter 17b, and is connected by bolts 29. A flange formed on the frame 26 of the chemical filter 17a is formed at the open end of the lower portion of the casing 19 (-12-200405406 0) 30. The flange 30 of the casing 19 is placed on the frame 26 of the chemical filter 17a and is connected by bolts 31. Between the frame 26 of the chemical filter 17a and the flange 30 of the casing 19, a peripheral part of the rectifying member 18 is interposed and held. The gas purge purification device 15 is configured to be arranged in a cylindrical casing 19 to form a blower 16, a rectifying member 18, and a gas filter 17. The rectifying member 18 has a caliber of the number of in-plane unevennesses set in a manner to compensate for the in-plane uneven wind speed distribution of the blower 16 (improved to a slightly uniform wind speed distribution). Fig. 4 is a schematic plan view showing a rectifying member 18; As shown in Fig. 4, the rectifying member 18 is made of a flat plate (rectifying plate) 33 having a plurality of openings, such as holes 32, through which gas passes through in its entirety. The size of the holes 32 is set so that the diameter of the rectifying member 18 becomes smaller as the diameter of the rectifying member 18 becomes smaller. The rectifying member 18 is preferably made of a punched metal plate having a plurality of holes in a metal flat plate. However, the rectifying member 18 may be provided with a plurality of holes in a flat plate made of resin. In this embodiment, the rectifying member 18 may also be referred to as a rectifying plate. Specifically, the rotating blade type blower 16 has a characteristic of generating a non-uniform wind speed distribution in a plane as described below for a direction in which the gas is conveyed into the casing 19 and flowing downward, at a right angle. That is, the wind speed of the area portion corresponding to the blade portion of the rotating blade 22 is the strongest. The wind speed of the area portion corresponding to the central portion of the rotating blade 22 is slightly weakened. The wind speed at the part corresponding to the area around the rotating blade 22 will be weaker. In view of the characteristics of such a blower 16, a hole is formed in the flat plate 3 3 of the rectifying member 18 in the following form. That is, a plurality of small-diameter holes, i.e., small holes 32a are formed in a region corresponding to the blade portion of the rotating blade 22. In the area corresponding to -13- (10) (10) 200405406 in the central portion of the rotating blade 22, a plurality of slightly larger-diameter holes, that is, middle holes 32b are formed. A plurality of large-diameter holes, i.e., large holes 32c, are formed in the area corresponding to the periphery of the rotating blade 22. Thereby, as shown by the arrow in Fig. 3, the gas filter portion 17 passes air at a uniform wind speed distribution in the plane. Therefore, it is possible to prevent the partial clogging of the gas filtering unit 17 and to stabilize the performance of the gas filtering unit 17 and extend the life (durability improvement). The top surface of the atmospheric transfer chamber 5 is formed with an opening for introducing clean air. A gas radon purification device 15 is provided on the top surface of the atmospheric transfer chamber 5 so as to communicate with the opening 34 and the inside of the casing 19 of the gas radon purification device 15. The housing 28 of the particulate filter 17b is placed on the top surface of the atmospheric transfer chamber 5 and is connected by bolts 35. Thereby, the gas radon purification device 15 is fixed to the top surface of the atmospheric transfer chamber 5. If the above is a requirement, the gas radon purification device 15 according to this embodiment is provided with a blower 16 and a gas filter 17 provided downstream from the blower 16 between the blower 16 and the gas filter 17. A rectifying member 18 is provided to make use of the uneven wind speed distribution in the plane of the blower 16 to form a slightly uniform wind speed distribution in the plane. Therefore, it is possible to prevent the partial clogging of the gas filtering portion 17 and to stabilize the performance of the gas filtering portion 17 and extend the life. In addition, the wind speed below the particulate filter 17b is very uniform. Therefore, the airflow in the atmospheric transfer chamber 5 will not be disturbed. As a result, the particles do not easily rise upward, and the cleanliness in the air transfer chamber 5 can be maintained. The gas filtration unit 17 is preferably a combination of a chemical filter and a particulate filter ', but any of them may be used. For example, when there is only a particulate filter in the gas filtration section, -14- (11) to (11) to 200,405,406 will not cause particles to pass through at the initial stage, and there will be no localized accumulation of particles and blockage. Therefore, the performance as a particle filter is very stable and can extend the life and replacement time. When the gas filtration unit is only chemically filtered, the chemical pollutants such as organic gas will be dispersed and adsorbed. There is no possibility that the chemical pollutants will pass through when the adsorption allowance is exceeded. Therefore, the performance as a chemical filter is very stable and can extend the life and the replacement time. The blower 16 is made of a propeller-type blower, so that it can simplify the structure and make the device smaller than other fans such as centrifugal blowers. On the one hand, the problem of non-uniform wind speed distribution in a plane where a propeller-type blower is likely to occur can be solved by the rectifying member 18. The blower 16, the flow regulating member 18, and the gas filter 17 are arranged in the cylindrical case 19, so that the device can be unitized and miniaturized. Therefore, it is possible to improve the installability of the work room such as the clean room, the atmospheric transfer room 5, and the like. The rectifying member 18 is made of a flat plate having a plurality of openings such as holes 32, and the diameter of the opening is changed in accordance with the wind speed distribution. Therefore, a non-uniform wind speed distribution in a plane can be easily changed to a slightly uniform wind speed distribution in a plane with a simple structure. The gas filter unit 17 is configured by sequentially disposing a chemical filter 17a and a particulate filter 17b in the air supply direction. Therefore, it can remove chemical pollutants and particles floating in the air and improve dust-freeness. In particular, a particle filter 17b can be used to capture particles that have passed through the chemical filter portion 17a. The particulate filter 17b may be any of a ULPA filter, a HEPA filter, or other particulate removal filters having the same function and structure. Furthermore, in the semiconductor processing system (vacuum processing system) 1 according to the embodiment of the present invention, the top surface of the atmospheric transfer chamber 5 is -15- (12) (12) 200405406 in a normal-pressure working chamber that performs wafer W transfer and the like. Equipped with gas radon purification device 15. Therefore, it is possible to stably form the clean air having a high degree of dust-free air flowing downward in the atmospheric transfer chamber 5. Therefore, particles and the like can be prevented from adhering to the vacuum processing system 1 of the wafer W, and the yield can be improved. 5 and 6 are schematic plan and sectional views showing a modified example 18X of a rectifying member that can be used in the gas radon purification device 15 shown in Fig. 3. The rectifying member 18X of this modification example also has a number of apertures set in the plane to compensate for uneven wind speed distribution in the plane of the blower 16 (improved to a slightly uniform wind speed distribution). However, unlike the rectifying member 18 shown in Fig. 4, the rectifying member 18X is set at a position where the number of apertures of the rectifying member 18X is low so that the density of the holes 32 passing through the gas is low. In order to satisfy this requirement, the rectifying member 18X is provided with a flat plate (rectifying plate) 33X having a plurality of holes 32 of the same size passing through the gas, and a plurality of diameters corresponding to the rectifying member 18X to plug the plurality. A ring-shaped blocking plate 36 as a part of the hole 32. Specifically, a plurality of holes 32 having a diameter of 2 mm are arranged in the flat plate 33X at a pitch of 8.5 mm, for example. An annular resisting plate 36 having an inner diameter of 130 mm and an outer diameter of 180 mm is attached to the flat plate 33X by welding or the like. By using the rectifying member 18X thus constituted, the uneven wind speed distribution in the plane can be easily changed to a slightly uniform wind speed distribution in the plane with a simple structure. Moreover, the gas purge purification device 15 'having such a rectifying member 18X can also form a stable purge air with a high degree of dust-free flow in the atmospheric transfer chamber 5 of the semiconductor processing system (vacuum processing system) 1. Therefore, it is possible to prevent particles and the like from being attached to the vacuum processing system 1 of the wafer W, thereby improving the -16- (13) (13) 200405406 yield. Fig. 8 shows a gas purge purification device 45 according to another embodiment of the present invention. The gas radon purification device 45 can also be arranged on the top surface of the atmospheric transfer chamber 5 of the processing system 1 shown in Fig. 1. The gas radon purification device 4 5 is provided on the upstream side with a blower 1 6. Rectifying member 18X, particulate filter 17b, and rectifying member 46, and these are installed in the housing 19. The blower 16, rectifying member 18X, particulate filter 17b, and housing 19 are actually the same as referring to FIGS. 1 to 6 The corresponding components described are the same. On the one hand, the rectifying member 46 arranged at the lowest level is different from the rectifying member 18 or 18X, and has a uniform number of calibers in the plane. Specifically, the rectifying member 46 is uniformly and comprehensively With passing gas A flat plate (rectifying plate) having a plurality of holes of the same size. The rectifying member 46 is preferably made of a punched metal plate having a plurality of holes in a metal flat plate. As mentioned earlier, the particulate filter 17b has For example, the filter body 27 of the inorganic fiber paper is formed in a bellows shape as shown in the cross section in FIG. 8. Therefore, even the air velocity distribution of the air input to the particulate filter 17b is uniform within the plane, and the output of the particulate filter 17b may occur due to The serpentine wind velocity distribution from the filter body 27 is very fine and uneven. The rectifying member 46 arranged at the lowest stream can cancel the fine unevenness of the wind velocity distribution to form a more uniform air in the plane. Fig. 9 is a schematic diagram showing a gas purge purification device 55 according to another embodiment of the present invention. The gas purge purification device 55 is provided in, for example, a photoresist-coated system. It is used to form the purge air and flow downward. The gas purge purification device 55 is provided with a chemical filter lh, -17- 200405406 'from the upstream side (14) a rectifying member 18X, a blower 16, and a particulate filter 17b. Mounted on the housing 19. Although the outline dimensions of these components are appropriately set, they are actually functionally the same as the corresponding components described with reference to FIGS. 1 to 8. As shown in this embodiment, the rectifying component 1 8X (or the rectifying member 18 shown in Fig. 4) can also be arranged on the input side of the blower 16. At this time, the uneven wind speed distribution in the plane of the blower 16 can be compensated to form a slightly uniform wind speed distribution. FIG. 10 is a schematic diagram showing a semiconductor processing system provided with a gas purge device according to another embodiment of the present invention. The semiconductor processing system 61 is further provided with an isolation division in a clean room 60. The top surface 62 and the side wall 63 of the compartment of the working space 65. A processing chamber 66 is provided in the work space 65 for performing semiconductor processing on an LCD substrate, a semiconductor wafer, or the like. A gas purge purification device 68 is provided on the top surface 62 of the compartment in the work space 65 to form a high dust-free purge air flowing downward. Furthermore, a gas purge purifying device 69 is provided in the side wall 63 of the compartment for purifying the air after use in the work space 65 and returning it to the clean room 60. The gas radon purifying devices 68 and 69 can basically have the same structure as the gas radon purifying device 15 shown in FIG. 8. The following description is made with reference to the symbols in FIGS. 3 to 6. The gas rectifying member 18 or 18X (refer to FIGS. 4 to 6) of the gas purge. Purifying device 68 disposed on the top surface 62 of the compartment has the same function as that of the gas purge purifying device 15. That is, the rectifying member 18 or 18X of the gas radon purification device 68 will prevent local blockage of the gas filtering unit 17 and achieve stability of the performance of the gas filtering unit 17 -18- (15) (15) 200405406 extend your life. On the other hand, the wind speed below the particulate filter 17b is made uniform, and no disturbed air flow is caused in the work space 65. On the one hand, the role of the rectifying member 18 or 18X (refer to FIGS. 4 to 6) of the gas purge purification device 69 provided on the side wall 63 of the compartment can prevent local blockage of the gas filtering unit 17 and achieve gas filtration. The performance of the parts 17 is stabilized and the life is extended. Although the embodiments of the present invention have been described in detail with reference to the drawings, the present invention is not limited to the foregoing embodiments, and various design changes and the like can be made without departing from the scope of the present invention. The processing system related to the present invention may be an atmospheric processing system. The clean air supply device according to the present invention can also be applied to an inspection device for inspecting a substrate to be processed to an inspection room (work room). The substrate to be processed may be an LCD substrate, a glass substrate, etc. other than a semiconductor wafer. The rectifying member is preferably formed with a plurality of holes (openings) in a flat plate, but it can also be made of a mesh fabric that changes the number of meshes of the mesh according to the wind speed distribution of the blower. [Industrial Applicability] If the body purifying device according to the embodiment of the present invention and the semiconductor processing system using the same device are used, the problems of the conventional technology can be solved, that is, the performance of gas filtration is unstable and the gas filtration One or more of the problems such as short life, low in-plane uniformity of the formed airflow. [Brief description of the drawings] FIG. 1 is a schematic configuration diagram showing a semiconductor processing system including a gas purge device according to an embodiment of the present invention. -19- * (16) (16) 200405406 Fig. 2 is a schematic perspective view showing the atmospheric transfer chamber of the processing system shown in Fig. 1. FIG. 3 is a cross-sectional view showing one of the gas and plutonium purification devices arranged in the atmospheric transfer chamber shown in FIG. 2. Fig. 4 is a schematic plan view showing a rectifying member of the gas purge device shown in Fig. 3; Fig. 5 is a schematic plan view showing a modified example of a rectifying member that can be used in the gas radon purification device shown in Fig. 3; 0 FIG. 6 is a sectional view of the rectifying member shown in FIG. 5. Fig. 7 is a schematic plan view showing a chemical filtration of the gas purge device shown in Fig. 3; Fig. 8 is a schematic diagram showing a gas purification device according to another embodiment of the present invention. Fig. 9 is a schematic diagram showing a gas radon purification device according to another embodiment of the present invention. FIG. 10 is a schematic diagram showing a semiconductor processing system including a gas radon purification device according to another embodiment of the present invention. Fig. 11 is a cross-sectional view showing an example of a conventional gas radon purification device @%. Figure 12 is a 槪 @ ® · diagram showing the dust collection status of the particulate filter. [Symbol description] 140: blower ... 20- (17) (17) 200405406 1 4 1: gas filter 143: particle filter 1 4 2 ·. Operating room-1: semiconductor processing system 2a, 2b, 2c, 2d: Processing chamber 3: Vacuum transfer chamber 4a, 4b: Loading interlocking vacuum chamber 5: Atmospheric transfer chamber 9 6: Transfer arm mechanism
Gl、G2、G3、G4:閘型閥 G 7、G 8 :閘型閥 7:框體 8a、8b、8c:搬入、搬出口 10a、10b、10c:載置台 9:載具 W:晶圓 參 1 4 :搬送支臂 11:搬送機構 1 2 :導軌 1 3 :定方位器 · 1 5 :氣體淸淨化裝置 1 6 :送風機 1 7 :氣體過濾部 1 8 :整流構件 -21 - (18) (18)200405406 1 9 :外殼 2 0 :通風口 2 1 :鼓風機機殼 2 2 :旋轉葉片 2 3 :電動馬達 24:支持桿 17a:化學式過濾器 1 7 b :顆粒過濾器 Φ 2 5 a :吸附劑 2 5 :過濾本體 2 6 :框體 2 7 :過濾本體 28:框體 2 9 :螺栓 3 0 :凸緣 3 1 :螺栓 · 32:孔 33··平板（整流板） 3 2 a :小孑L 3 2 b :中孔 3 2 c :大孔 3 4 :開口部 3 5 ·.螺栓 18X:整流構件 22- (19) (19)200405406 45:氣體淸淨化裝置 4 6 :整流構件 6 1 :半導體處理系統 60:無塵室 65:作業空間 62:隔間頂面 63:隔間側壁 6 6 :處理室 68:氣體淸淨化裝置Gl, G2, G3, G4: Gate valves G 7, G 8: Gate valves 7: Frames 8a, 8b, 8c: Carry in and port 10a, 10b, 10c: Mounting table 9: Carrier W: Wafer Reference 14 4: Transport arm 11: Transport mechanism 1 2: Guide rail 1 3: Orientation device15: Gas radon purification device 16: Air blower 1 7: Gas filter unit 8: Rectifying member-21-(18) (18) 200405406 1 9: Housing 2 0: Vent 2 2: Blower housing 2 2: Rotating blade 2 3: Electric motor 24: Support rod 17a: Chemical filter 1 7b: Particle filter Φ 2 5 a: Adsorbent 2 5: Filter body 2 6: Frame 2 7: Filter body 28: Frame 2 9: Bolt 3 0: Flange 3 1: Bolt · 32: Hole 33 · · Flat plate (rectification plate) 3 2 a: Small 孑 L 3 2 b: Middle hole 3 2 c: Large hole 3 4: Opening 3 5 · Bolt 18X: Rectifier member 22- (19) (19) 200405406 45: Gas purge purification device 4 6: Rectifier member 6 1: Semiconductor processing system 60: Clean room 65: Working space 62: Compartment top surface 63: Compartment side wall 6 6: Processing chamber 68: Gas purge purification device
-23--twenty three-