SU128008A1 - The method of obtaining semiconductor films on dielectrics - Google Patents
The method of obtaining semiconductor films on dielectricsInfo
- Publication number
- SU128008A1 SU128008A1 SU633156A SU633156A SU128008A1 SU 128008 A1 SU128008 A1 SU 128008A1 SU 633156 A SU633156 A SU 633156A SU 633156 A SU633156 A SU 633156A SU 128008 A1 SU128008 A1 SU 128008A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- dielectrics
- semiconductor films
- obtaining semiconductor
- spectrum
- transparent
- Prior art date
Links
- 238000000034 method Methods 0.000 title description 5
- 239000004065 semiconductor Substances 0.000 title description 5
- 239000003989 dielectric material Substances 0.000 title description 4
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Landscapes
- Surface Treatment Of Glass (AREA)
- Physical Vapour Deposition (AREA)
Description
Разработанные ранее полупроводниковые пленки из окислов некоторых металлов (олова, инди , кадми ) позвол ют превращать такие изол торы как стекло и керамику в электропровод щий материал. Эти пленки нашли широкое применение в промышленности дл устранени запотевани стекол в оптических приборах и на транспорте дл сн ти электростатических зар дов в электронных приборах и дл мдогих других целей.The previously developed semiconductor films of oxides of some metals (tin, indium, cadmium) allow insulators such as glass and ceramics to be converted into electrically conductive material. These films have found widespread use in industry for eliminating glass fogging in optical devices and in transport for removing electrostatic charges in electronic devices and for other purposes.
Однако все разработанные как в СССР, так н за границей полупроводниковые пленки прозрачны лишь в видимой части спектра. Полупроводниковых пленок, прозрачных в инфракрасной области спектра, до насто щего времени не было.However, all semiconductor films developed both in the USSR and abroad are transparent only in the visible part of the spectrum. Until now, there have been no semiconductor films that are transparent in the infrared region of the spectrum.
Быстро развивающа с инфракрасна техника примен ет в качестве оптических сред такие материалы как природные и искусственные монокристаллы, вл ющиес диэлектриками. В св зи с этим необходимы электропровод щие пленки, прозрачные в инфракрасной области спектра.The rapidly developing infrared technology uses as optical media materials such as natural and artificial single crystals, which are dielectrics. In this connection, electrically conductive films that are transparent in the infrared region of the spectrum are required.
Найден новый способ с применением трехокиси вольфрама дл получени на диэлектриках полупроводниковых пленок, прозрачных не только в видимой, но и в инфракрасной области спектра, путем термообработки в атмосфере водорода диэлектриков, например, оптических деталей, покрытых слоем шестихлористого вольфрама, нанесенного из раствора в сухом этиловом спирте, или непосредственно слоем трехокиси вольфрама испарением последнего в вакууме.A new method was found using tungsten trioxide to obtain semiconductor films on dielectrics that are transparent not only in the visible, but also in the infrared region of the spectrum, by heat treating dielectrics in hydrogen, for example, optical parts coated with a layer of tungsten hexahyl chloride deposited from a solution in dry ethyl alcohol, or directly with a layer of tungsten trioxide by evaporation of the latter in a vacuum.
Предлагаемые способы позвол ют получать электропровод щне пленки, прозрачные в инфракрасной области спектра и хорошо закрепл ющиес на поверхности стекол и оптических кристаллов.The proposed methods make it possible to obtain electrically conductive films that are transparent in the infrared region of the spectrum and well attached to the surface of glasses and optical crystals.
Первый способ заключаетс в том, что известным методом химического просветлени нанос т тонкий слой диэлектрика из трехокиси вольфрама путем смачивани поверхности горизонтально-вращающейс детали некоторым количеством 5-25%-ного раствора шестнхлорисгоThe first method is that a thin layer of a tungsten trioxide dielectric is applied by a conventional chemical clarification method by wetting the surface of a horizontally rotating part with a certain amount of 5-25% solution of hexacid
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU633156A SU128008A1 (en) | 1959-07-08 | 1959-07-08 | The method of obtaining semiconductor films on dielectrics |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU633156A SU128008A1 (en) | 1959-07-08 | 1959-07-08 | The method of obtaining semiconductor films on dielectrics |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SU128008A1 true SU128008A1 (en) | 1959-11-30 |
Family
ID=48399247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU633156A SU128008A1 (en) | 1959-07-08 | 1959-07-08 | The method of obtaining semiconductor films on dielectrics |
Country Status (1)
| Country | Link |
|---|---|
| SU (1) | SU128008A1 (en) |
-
1959
- 1959-07-08 SU SU633156A patent/SU128008A1/en active
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