[go: up one dir, main page]

SG42803A1 - Utilization of sih4 soak purging deposition processes - Google Patents

Utilization of sih4 soak purging deposition processes

Info

Publication number
SG42803A1
SG42803A1 SG1995002044A SG1995002044A SG42803A1 SG 42803 A1 SG42803 A1 SG 42803A1 SG 1995002044 A SG1995002044 A SG 1995002044A SG 1995002044 A SG1995002044 A SG 1995002044A SG 42803 A1 SG42803 A1 SG 42803A1
Authority
SG
Singapore
Prior art keywords
sih4
purging
soak
utilization
deposition processes
Prior art date
Application number
SG1995002044A
Other languages
English (en)
Inventor
Meng Chu Tseng
Mei Chang
Ramanujapuram A Srinivas
Klaus-Dieter Rinnen
Moshe Eizenberg
Susan Telford
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG42803A1 publication Critical patent/SG42803A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • H10P14/42—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0209—Pretreatment of the material to be coated by heating
    • C23C16/0218—Pretreatment of the material to be coated by heating in a reactive atmosphere
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H10D64/0112—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
SG1995002044A 1994-09-27 1995-09-27 Utilization of sih4 soak purging deposition processes SG42803A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US31416194A 1994-09-27 1994-09-27

Publications (1)

Publication Number Publication Date
SG42803A1 true SG42803A1 (en) 1997-10-17

Family

ID=23218827

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1995002044A SG42803A1 (en) 1994-09-27 1995-09-27 Utilization of sih4 soak purging deposition processes

Country Status (6)

Country Link
US (3) US5780360A (fr)
EP (1) EP0704551B1 (fr)
JP (2) JP3167100B2 (fr)
KR (1) KR100214910B1 (fr)
DE (1) DE69518710T2 (fr)
SG (1) SG42803A1 (fr)

Families Citing this family (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6090706A (en) * 1993-06-28 2000-07-18 Applied Materials, Inc. Preconditioning process for treating deposition chamber prior to deposition of tungsten silicide coating on active substrates therein
EP0704551B1 (fr) * 1994-09-27 2000-09-06 Applied Materials, Inc. Procédé pour traiter un substrat dans une chambre de traitement sous vide
DE69717215T2 (de) * 1996-08-27 2003-07-24 The Boc Group, Inc. Rückgewinnung von Edelgasen
US6127269A (en) * 1996-11-12 2000-10-03 Taiwan Semiconductor Manufacturing Company Method for enhancing sheet resistance uniformity of chemical vapor deposited (CVD) tungsten silicide layers
US5963836A (en) * 1996-12-03 1999-10-05 Genus, Inc. Methods for minimizing as-deposited stress in tungsten silicide films
DE19704533C2 (de) 1997-02-06 2000-10-26 Siemens Ag Verfahren zur Schichterzeugung auf einer Oberfläche
US6068703A (en) * 1997-07-11 2000-05-30 Applied Materials, Inc. Gas mixing apparatus and method
JPH11200050A (ja) 1998-01-14 1999-07-27 Mitsubishi Electric Corp タングステンシリサイド膜の形成方法、半導体装置の製造方法、及び半導体ウェーハ処理装置
TW589398B (en) * 1998-05-20 2004-06-01 Samsung Electronics Co Ltd Filtering technique for CVD chamber process gases and the same apparatus
US6190732B1 (en) * 1998-09-03 2001-02-20 Cvc Products, Inc. Method and system for dispensing process gas for fabricating a device on a substrate
US6300255B1 (en) * 1999-02-24 2001-10-09 Applied Materials, Inc. Method and apparatus for processing semiconductive wafers
JP2000294775A (ja) * 1999-04-07 2000-10-20 Sony Corp 半導体装置の製造方法
TW469519B (en) * 1999-05-19 2001-12-21 Applied Materials Inc Utilization of SiH4 soak and purge in deposition processes
JP2001110750A (ja) * 1999-09-30 2001-04-20 Applied Materials Inc タングステンシリサイド膜を形成する方法、および金属−絶縁膜−半導体型トランジスタを製造する方法
KR100364656B1 (ko) * 2000-06-22 2002-12-16 삼성전자 주식회사 실리사이드 증착을 위한 화학 기상 증착 방법 및 이를수행하기 위한 장치
KR20030019613A (ko) 2000-07-28 2003-03-06 동경 엘렉트론 주식회사 성막방법
DE10115228B4 (de) * 2001-03-28 2006-07-27 Samsung Electronics Co., Ltd., Suwon Steuerung des anormalen Wachstums bei auf Dichlorsilan (DCS) basierenden CVD-Polycid WSix-Filmen
US6635965B1 (en) * 2001-05-22 2003-10-21 Novellus Systems, Inc. Method for producing ultra-thin tungsten layers with improved step coverage
US7589017B2 (en) * 2001-05-22 2009-09-15 Novellus Systems, Inc. Methods for growing low-resistivity tungsten film
US9076843B2 (en) 2001-05-22 2015-07-07 Novellus Systems, Inc. Method for producing ultra-thin tungsten layers with improved step coverage
US7262125B2 (en) * 2001-05-22 2007-08-28 Novellus Systems, Inc. Method of forming low-resistivity tungsten interconnects
US7955972B2 (en) 2001-05-22 2011-06-07 Novellus Systems, Inc. Methods for growing low-resistivity tungsten for high aspect ratio and small features
US7005372B2 (en) * 2003-01-21 2006-02-28 Novellus Systems, Inc. Deposition of tungsten nitride
US7141494B2 (en) * 2001-05-22 2006-11-28 Novellus Systems, Inc. Method for reducing tungsten film roughness and improving step coverage
US6517235B2 (en) * 2001-05-31 2003-02-11 Chartered Semiconductor Manufacturing Ltd. Using refractory metal silicidation phase transition temperature points to control and/or calibrate RTP low temperature operation
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US6730367B2 (en) * 2002-03-05 2004-05-04 Micron Technology, Inc. Atomic layer deposition method with point of use generated reactive gas species
US20050229947A1 (en) * 2002-06-14 2005-10-20 Mykrolis Corporation Methods of inserting or removing a species from a substrate
US6844258B1 (en) 2003-05-09 2005-01-18 Novellus Systems, Inc. Selective refractory metal and nitride capping
US7754604B2 (en) * 2003-08-26 2010-07-13 Novellus Systems, Inc. Reducing silicon attack and improving resistivity of tungsten nitride film
US7323411B1 (en) * 2003-09-26 2008-01-29 Cypress Semiconductor Corporation Method of selective tungsten deposition on a silicon surface
US7408225B2 (en) * 2003-10-09 2008-08-05 Asm Japan K.K. Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms
KR100695484B1 (ko) * 2004-01-13 2007-03-15 주식회사 하이닉스반도체 반도체 소자의 콘택 형성 방법
US20050186339A1 (en) * 2004-02-20 2005-08-25 Applied Materials, Inc., A Delaware Corporation Methods and apparatuses promoting adhesion of dielectric barrier film to copper
CN1989597A (zh) * 2004-07-30 2007-06-27 应用材料股份有限公司 薄硅化钨层沉积和栅金属集成
JP4798688B2 (ja) * 2004-08-26 2011-10-19 エルピーダメモリ株式会社 半導体装置の製造方法
KR100671627B1 (ko) * 2004-10-25 2007-01-19 주식회사 하이닉스반도체 플래쉬 메모리소자의 소스 콘택 형성방법
US7743731B2 (en) * 2006-03-30 2010-06-29 Tokyo Electron Limited Reduced contaminant gas injection system and method of using
US7655567B1 (en) 2007-07-24 2010-02-02 Novellus Systems, Inc. Methods for improving uniformity and resistivity of thin tungsten films
US8049178B2 (en) * 2007-08-30 2011-11-01 Washington State University Research Foundation Semiconductive materials and associated uses thereof
US7772114B2 (en) 2007-12-05 2010-08-10 Novellus Systems, Inc. Method for improving uniformity and adhesion of low resistivity tungsten film
US8053365B2 (en) * 2007-12-21 2011-11-08 Novellus Systems, Inc. Methods for forming all tungsten contacts and lines
US8062977B1 (en) 2008-01-31 2011-11-22 Novellus Systems, Inc. Ternary tungsten-containing resistive thin films
US8058170B2 (en) 2008-06-12 2011-11-15 Novellus Systems, Inc. Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics
US8551885B2 (en) * 2008-08-29 2013-10-08 Novellus Systems, Inc. Method for reducing tungsten roughness and improving reflectivity
US8623733B2 (en) 2009-04-16 2014-01-07 Novellus Systems, Inc. Methods for depositing ultra thin low resistivity tungsten film for small critical dimension contacts and interconnects
US9159571B2 (en) 2009-04-16 2015-10-13 Lam Research Corporation Tungsten deposition process using germanium-containing reducing agent
US10256142B2 (en) 2009-08-04 2019-04-09 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US8207062B2 (en) * 2009-09-09 2012-06-26 Novellus Systems, Inc. Method for improving adhesion of low resistivity tungsten/tungsten nitride layers
US8709948B2 (en) 2010-03-12 2014-04-29 Novellus Systems, Inc. Tungsten barrier and seed for copper filled TSV
WO2013015017A1 (fr) * 2011-07-27 2013-01-31 シャープ株式会社 Procédé de fabrication d'un film contenant du silicium
JP2013143429A (ja) * 2012-01-10 2013-07-22 Sharp Corp シリコン含有膜の製造方法および光電変換装置の製造方法
KR102064627B1 (ko) 2012-03-27 2020-01-09 노벨러스 시스템즈, 인코포레이티드 텅스텐 피처 충진
US9034760B2 (en) 2012-06-29 2015-05-19 Novellus Systems, Inc. Methods of forming tensile tungsten films and compressive tungsten films
US8975184B2 (en) 2012-07-27 2015-03-10 Novellus Systems, Inc. Methods of improving tungsten contact resistance in small critical dimension features
US8853080B2 (en) 2012-09-09 2014-10-07 Novellus Systems, Inc. Method for depositing tungsten film with low roughness and low resistivity
KR102217790B1 (ko) * 2012-09-26 2021-02-18 어플라이드 머티어리얼스, 인코포레이티드 기체 화합물들을 퍼징하기 위한 장치 및 방법
US9153486B2 (en) 2013-04-12 2015-10-06 Lam Research Corporation CVD based metal/semiconductor OHMIC contact for high volume manufacturing applications
US9589808B2 (en) 2013-12-19 2017-03-07 Lam Research Corporation Method for depositing extremely low resistivity tungsten
US9997405B2 (en) 2014-09-30 2018-06-12 Lam Research Corporation Feature fill with nucleation inhibition
US9953984B2 (en) 2015-02-11 2018-04-24 Lam Research Corporation Tungsten for wordline applications
US10378107B2 (en) * 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US9613818B2 (en) 2015-05-27 2017-04-04 Lam Research Corporation Deposition of low fluorine tungsten by sequential CVD process
US9754824B2 (en) 2015-05-27 2017-09-05 Lam Research Corporation Tungsten films having low fluorine content
US9978605B2 (en) 2015-05-27 2018-05-22 Lam Research Corporation Method of forming low resistivity fluorine free tungsten film without nucleation
WO2019036292A1 (fr) 2017-08-14 2019-02-21 Lam Research Corporation Procédé de coulage de métal pour ligne de mots non-et verticale tridimensionnelle
KR102806630B1 (ko) 2018-05-03 2025-05-12 램 리써치 코포레이션 3d nand 구조체들에 텅스텐 및 다른 금속들을 증착하는 방법
KR102857307B1 (ko) 2018-12-14 2025-09-08 램 리써치 코포레이션 3d nand 구조체 상의 원자 층 증착
CN113710830A (zh) 2019-04-11 2021-11-26 朗姆研究公司 高台阶覆盖率钨沉积
US12237221B2 (en) 2019-05-22 2025-02-25 Lam Research Corporation Nucleation-free tungsten deposition
WO2021030836A1 (fr) 2019-08-12 2021-02-18 Lam Research Corporation Dépôt de tungstène
US20230187204A1 (en) * 2021-12-10 2023-06-15 Applied Materials, Inc. Tungsten Fluoride Soak And Treatment For Tungsten Oxide Removal

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4842893A (en) 1983-12-19 1989-06-27 Spectrum Control, Inc. High speed process for coating substrates
JPS63120419A (ja) * 1986-11-10 1988-05-24 Matsushita Electronics Corp 半導体装置の製造方法
US4737474A (en) * 1986-11-17 1988-04-12 Spectrum Cvd, Inc. Silicide to silicon bonding process
US4951601A (en) 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
EP0305143B1 (fr) * 1987-08-24 1993-12-08 Fujitsu Limited Procédé pour la formation sélective d'une couche conductrice
US4842892A (en) * 1987-09-29 1989-06-27 Xerox Corporation Method for depositing an n+ amorphous silicon layer onto contaminated substrate
JPS6457034U (fr) 1987-10-07 1989-04-10
JPH02172155A (ja) 1988-12-26 1990-07-03 Haibetsuku:Kk チップ型ランプ
JPH02237025A (ja) * 1989-03-09 1990-09-19 Matsushita Electron Corp 半導体装置の製造方法
JPH0383389A (ja) 1989-08-28 1991-04-09 Murata Mfg Co Ltd 回路基板
EP1069207A3 (fr) * 1990-01-08 2003-05-14 Lsi Logic Corporation Méthode d'attaque in-situ pour nettoyage d'un réacteur CVD
US4966869A (en) * 1990-05-04 1990-10-30 Spectrum Cvd, Inc. Tungsten disilicide CVD
JPH0461324A (ja) * 1990-06-29 1992-02-27 Nec Corp 選択気相成長法
JPH04294532A (ja) * 1991-03-22 1992-10-19 Sony Corp タングステンシリサイド膜の形成方法
JPH05182925A (ja) * 1991-12-30 1993-07-23 Sony Corp 半導体装置の製造方法及び半導体装置の製造装置
US5231056A (en) * 1992-01-15 1993-07-27 Micron Technology, Inc. Tungsten silicide (WSix) deposition process for semiconductor manufacture
US5326723A (en) * 1992-09-09 1994-07-05 Intel Corporation Method for improving stability of tungsten chemical vapor deposition
US5272112A (en) * 1992-11-09 1993-12-21 Genus, Inc. Low-temperature low-stress blanket tungsten film
US5500249A (en) * 1992-12-22 1996-03-19 Applied Materials, Inc. Uniform tungsten silicide films produced by chemical vapor deposition
JP3294413B2 (ja) * 1993-12-28 2002-06-24 富士通株式会社 半導体装置の製造方法及び製造装置
US5447887A (en) * 1994-04-01 1995-09-05 Motorola, Inc. Method for capping copper in semiconductor devices
EP0704551B1 (fr) * 1994-09-27 2000-09-06 Applied Materials, Inc. Procédé pour traiter un substrat dans une chambre de traitement sous vide
EP0802564A3 (fr) * 1996-04-19 1999-02-24 Nec Corporation Dispositif semi-conducteur ayant un élément hautement résistif incluant un métal à haut point de fusion

Also Published As

Publication number Publication date
JP3167100B2 (ja) 2001-05-14
JP3990792B2 (ja) 2007-10-17
JPH10212583A (ja) 1998-08-11
JPH08236464A (ja) 1996-09-13
US5780360A (en) 1998-07-14
KR100214910B1 (ko) 1999-08-02
EP0704551A1 (fr) 1996-04-03
EP0704551B1 (fr) 2000-09-06
DE69518710T2 (de) 2001-05-23
US6193813B1 (en) 2001-02-27
KR960012331A (ko) 1996-04-20
US5817576A (en) 1998-10-06
DE69518710D1 (de) 2000-10-12

Similar Documents

Publication Publication Date Title
SG42803A1 (en) Utilization of sih4 soak purging deposition processes
EP0706425A4 (fr) Depot selectif au plasma
GB2293179B (en) Coated substrate and process for its formation
PL321426A1 (en) Method of enzymaticaly treating wool
EP1017416A4 (fr) Traitement de la cardiomyopathie
EP0805484A4 (fr) Procede de nettoyage de substrats
IL135232A0 (en) 21-hydroxy-6, 19-oxidoprogesterone for treating excess of glucocorticoids
SG54602A1 (en) Coated deposition chamber equipment
GB9414444D0 (en) Cvd diamond coating of elongate substrate material
AU1794497A (en) Hot-dip galvanizing bath and process
ZA969721B (en) Method of treating sepsis.
GB9509295D0 (en) Chemical process
EP0981361A4 (fr) Methode de traitement de l'etat septique
GB9421335D0 (en) Chemical vapour deposition
GB9504736D0 (en) Method of storing acetylene
GB9510750D0 (en) Chemical process
GB2300369B (en) Coating process
GB2331514A9 (en) Treatment of wool scouring effluent
KR0109516Y1 (en) Chemical vapor deposition
ZA953243B (en) Felt treatment-inorganic deposit prevention by spray treatment
GB9716728D0 (en) Spray deposition process
GB9510239D0 (en) Chemical process
GB9413160D0 (en) Treatment of hydrocarbon substrates
ZA961746B (en) Treatment of hydrogen sulphine-containing gas streams.
GB9613472D0 (en) De-racemisation of saturated substrates