SG111923A1 - Light emitting device and method of manufacturing the same - Google Patents
Light emitting device and method of manufacturing the sameInfo
- Publication number
- SG111923A1 SG111923A1 SG200107482A SG200107482A SG111923A1 SG 111923 A1 SG111923 A1 SG 111923A1 SG 200107482 A SG200107482 A SG 200107482A SG 200107482 A SG200107482 A SG 200107482A SG 111923 A1 SG111923 A1 SG 111923A1
- Authority
- SG
- Singapore
- Prior art keywords
- manufacturing
- light emitting
- same
- emitting device
- light
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/88—Dummy elements, i.e. elements having non-functional features
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000388378 | 2000-12-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG111923A1 true SG111923A1 (en) | 2005-06-29 |
Family
ID=18855123
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG200107482A SG111923A1 (en) | 2000-12-21 | 2001-11-30 | Light emitting device and method of manufacturing the same |
Country Status (6)
| Country | Link |
|---|---|
| US (6) | US6933533B2 (zh) |
| KR (2) | KR100859567B1 (zh) |
| CN (1) | CN100438061C (zh) |
| MY (1) | MY145489A (zh) |
| SG (1) | SG111923A1 (zh) |
| TW (1) | TW541713B (zh) |
Families Citing this family (55)
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| US6825488B2 (en) * | 2000-01-26 | 2004-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US6509616B2 (en) * | 2000-09-29 | 2003-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and its manufacturing method |
| TW525216B (en) * | 2000-12-11 | 2003-03-21 | Semiconductor Energy Lab | Semiconductor device, and manufacturing method thereof |
| SG111923A1 (en) * | 2000-12-21 | 2005-06-29 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
| TW575652B (en) * | 2001-03-07 | 2004-02-11 | Matsushita Electric Industrial Co Ltd | Light-emitting device |
| US6661180B2 (en) | 2001-03-22 | 2003-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, driving method for the same and electronic apparatus |
| JP4969001B2 (ja) * | 2001-09-20 | 2012-07-04 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
| JP4310984B2 (ja) * | 2002-02-06 | 2009-08-12 | 株式会社日立製作所 | 有機発光表示装置 |
| KR100864001B1 (ko) * | 2002-06-14 | 2008-10-16 | 삼성전자주식회사 | 유기 전계발광장치 |
| KR100489786B1 (ko) * | 2002-07-08 | 2005-05-16 | 엘지.필립스 엘시디 주식회사 | 액티브 매트릭스형 유기전계발광 소자 |
| US7094684B2 (en) * | 2002-09-20 | 2006-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| TWI357616B (en) | 2002-09-20 | 2012-02-01 | Semiconductor Energy Lab | Display device and manufacturing method thereof |
| WO2004075607A1 (ja) * | 2003-02-20 | 2004-09-02 | Fujitsu Limited | 有機el素子及びその製造方法 |
| CN1320515C (zh) * | 2003-02-24 | 2007-06-06 | 友达光电股份有限公司 | 有机发光显示器 |
| JP4562997B2 (ja) | 2003-03-26 | 2010-10-13 | 株式会社半導体エネルギー研究所 | 素子基板及び発光装置 |
| WO2004086343A1 (ja) | 2003-03-26 | 2004-10-07 | Semiconductor Energy Laboratory Co., Ltd. | 素子基板及び発光装置 |
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| JP4379278B2 (ja) * | 2004-09-21 | 2009-12-09 | カシオ計算機株式会社 | トランジスタアレイ基板及びディスプレイパネル |
| TWI279752B (en) * | 2004-09-21 | 2007-04-21 | Casio Computer Co Ltd | Transistor array substrate, display panel and manufacturing method of display panel |
| US7753751B2 (en) | 2004-09-29 | 2010-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating the display device |
| KR100696479B1 (ko) * | 2004-11-18 | 2007-03-19 | 삼성에스디아이 주식회사 | 평판표시장치 및 그의 제조방법 |
| KR101133760B1 (ko) * | 2005-01-17 | 2012-04-09 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 이를 포함하는 액정 표시 장치 |
| US7732330B2 (en) * | 2005-06-30 | 2010-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method using an ink-jet method of the same |
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| US7655566B2 (en) * | 2005-07-27 | 2010-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP4448148B2 (ja) * | 2006-03-29 | 2010-04-07 | キヤノン株式会社 | 有機発光装置 |
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| JP4403430B2 (ja) * | 2007-03-14 | 2010-01-27 | ソニー株式会社 | 表示パネル及び電子機器 |
| US8698697B2 (en) * | 2007-06-12 | 2014-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5336102B2 (ja) * | 2008-04-03 | 2013-11-06 | 三菱電機株式会社 | Tft基板 |
| JP5141354B2 (ja) * | 2008-04-22 | 2013-02-13 | セイコーエプソン株式会社 | 有機エレクトロルミネッセンス装置および電子機器 |
| US8053253B2 (en) * | 2008-06-06 | 2011-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| KR101753574B1 (ko) | 2008-07-10 | 2017-07-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 전자 기기 |
| TWI475282B (zh) * | 2008-07-10 | 2015-03-01 | Semiconductor Energy Lab | 液晶顯示裝置和其製造方法 |
| JP5216716B2 (ja) | 2008-08-20 | 2013-06-19 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
| JP2011187922A (ja) * | 2009-10-30 | 2011-09-22 | Toshiba Lighting & Technology Corp | 発光装置、発光装置の製造方法および照明装置 |
| KR102007134B1 (ko) | 2009-11-27 | 2019-08-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작방법 |
| WO2011108020A1 (ja) * | 2010-03-01 | 2011-09-09 | パナソニック株式会社 | 有機el装置およびその製造方法 |
| US8741677B2 (en) | 2010-11-30 | 2014-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of the same |
| KR101889748B1 (ko) * | 2011-01-10 | 2018-08-21 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
| CN102646676B (zh) * | 2011-11-03 | 2015-06-10 | 京东方科技集团股份有限公司 | 一种tft阵列基板 |
| CN102800815B (zh) * | 2012-08-06 | 2015-05-20 | 深圳市华星光电技术有限公司 | 有机显示装置及其制作方法 |
| DE102012109161B4 (de) * | 2012-09-27 | 2021-10-28 | Pictiva Displays International Limited | Organisches, optoelektronisches Bauelement, Verfahren zum Herstellen eines organischen, optoelektronischen Bauelementes und Verfahren zum stoffschlüssigen, elektrischen Kontaktieren |
| CN104916660B (zh) * | 2015-04-20 | 2018-04-20 | 京东方科技集团股份有限公司 | 柔性显示面板及显示装置 |
| KR102390441B1 (ko) * | 2015-10-15 | 2022-04-26 | 삼성디스플레이 주식회사 | 유기발광 표시장치 |
| WO2018043426A1 (ja) * | 2016-09-05 | 2018-03-08 | シャープ株式会社 | アクティブマトリクス基板およびその製造方法 |
| CN110268460B (zh) * | 2017-02-23 | 2021-08-10 | 夏普株式会社 | 驱动电路、矩阵基板以及显示装置 |
| CN107887422B (zh) * | 2017-10-31 | 2020-12-25 | 昆山国显光电有限公司 | 有机电致发光器件、显示器及移动通信设备 |
| FR3077653A1 (fr) * | 2018-02-06 | 2019-08-09 | Aledia | Dispositif optoelectronique avec des composants electroniques au niveau de la face arriere du substrat et procede de fabrication |
| KR102671038B1 (ko) * | 2018-07-17 | 2024-06-03 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
| CN110972495A (zh) * | 2019-05-10 | 2020-04-07 | 京东方科技集团股份有限公司 | 发光驱动基板及其制作方法、发光基板和显示装置 |
| KR102756981B1 (ko) * | 2019-10-14 | 2025-01-21 | 삼성전자주식회사 | 발광 다이오드 모듈 및 이를 포함하는 디스플레이 장치 |
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2001
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- 2001-12-07 TW TW090130429A patent/TW541713B/zh not_active IP Right Cessation
- 2001-12-20 KR KR1020010081592A patent/KR100859567B1/ko not_active Expired - Fee Related
- 2001-12-20 US US10/022,262 patent/US6933533B2/en not_active Expired - Lifetime
- 2001-12-21 CN CNB011433868A patent/CN100438061C/zh not_active Expired - Fee Related
-
2005
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-
2008
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-
2009
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2011
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2014
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20020050718A (ko) | 2002-06-27 |
| TW541713B (en) | 2003-07-11 |
| US8013346B2 (en) | 2011-09-06 |
| US20050200301A1 (en) | 2005-09-15 |
| CN100438061C (zh) | 2008-11-26 |
| US8735909B2 (en) | 2014-05-27 |
| CN1360350A (zh) | 2002-07-24 |
| KR20080063246A (ko) | 2008-07-03 |
| KR100891728B1 (ko) | 2009-04-03 |
| KR100859567B1 (ko) | 2008-09-23 |
| US6933533B2 (en) | 2005-08-23 |
| US9793335B2 (en) | 2017-10-17 |
| US9231044B2 (en) | 2016-01-05 |
| MY145489A (en) | 2012-02-29 |
| US20090321753A1 (en) | 2009-12-31 |
| US20160133685A1 (en) | 2016-05-12 |
| US20140346481A1 (en) | 2014-11-27 |
| US20110315993A1 (en) | 2011-12-29 |
| US7629618B2 (en) | 2009-12-08 |
| US20020079503A1 (en) | 2002-06-27 |
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