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SG10201709401QA - SiC WAFER PRODUCING METHOD - Google Patents

SiC WAFER PRODUCING METHOD

Info

Publication number
SG10201709401QA
SG10201709401QA SG10201709401QA SG10201709401QA SG10201709401QA SG 10201709401Q A SG10201709401Q A SG 10201709401QA SG 10201709401Q A SG10201709401Q A SG 10201709401QA SG 10201709401Q A SG10201709401Q A SG 10201709401QA SG 10201709401Q A SG10201709401Q A SG 10201709401QA
Authority
SG
Singapore
Prior art keywords
ingot
producing method
modified portion
sic
sic wafer
Prior art date
Application number
SG10201709401QA
Other languages
English (en)
Inventor
Hirata Kazuya
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201709401QA publication Critical patent/SG10201709401QA/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26F—PERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING
    • B26F3/00—Severing by means other than cutting; Apparatus therefor
    • B26F3/002—Precutting and tensioning or breaking
    • H10P14/2904—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H10P14/3458—
    • H10P90/00—
    • H10P95/11—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
    • B26D7/00—Details of apparatus for cutting, cutting-out, stamping-out, punching, perforating, or severing by means other than cutting
    • B26D7/08—Means for treating work or cutting member to facilitate cutting
    • B26D7/086—Means for treating work or cutting member to facilitate cutting by vibrating, e.g. ultrasonically

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Forests & Forestry (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Thermal Sciences (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
SG10201709401QA 2016-12-02 2017-11-15 SiC WAFER PRODUCING METHOD SG10201709401QA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016234958A JP2018093046A (ja) 2016-12-02 2016-12-02 ウエーハ生成方法

Publications (1)

Publication Number Publication Date
SG10201709401QA true SG10201709401QA (en) 2018-07-30

Family

ID=62163839

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201709401QA SG10201709401QA (en) 2016-12-02 2017-11-15 SiC WAFER PRODUCING METHOD

Country Status (8)

Country Link
US (1) US10201907B2 (zh)
JP (1) JP2018093046A (zh)
KR (1) KR20180063832A (zh)
CN (1) CN108145307B (zh)
DE (1) DE102017220758B4 (zh)
MY (1) MY186577A (zh)
SG (1) SG10201709401QA (zh)
TW (1) TWI732065B (zh)

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JP2018093046A (ja) * 2016-12-02 2018-06-14 株式会社ディスコ ウエーハ生成方法
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US12103111B2 (en) * 2019-03-28 2024-10-01 Tokyo Electron Limited Processing apparatus and processing method
DE102019111985A1 (de) * 2019-05-08 2020-11-12 Infineon Technologies Ag Verfahren zum herstellen von siliziumcarbid-vorrichtungen und wafer-verbund, der mit laser modifizierte zonen in einem handhabungssubstrat enthält
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
JP7330771B2 (ja) * 2019-06-14 2023-08-22 株式会社ディスコ ウエーハの生成方法およびウエーハの生成装置
CN111215766A (zh) * 2019-12-26 2020-06-02 松山湖材料实验室 SiC晶片制造方法
CN111889896B (zh) * 2020-07-02 2022-05-03 松山湖材料实验室 一种超声协同激光的晶锭剥离方法
CN111986986B (zh) * 2020-08-24 2024-05-03 松山湖材料实验室 一种晶圆的剥离方法及剥离装置
DE212021000192U1 (de) * 2020-09-17 2022-01-24 Rohm Co., Ltd. Halbleiterbauteil-Herstellungsverfahren und Waferstruktur
CN114589421B (zh) * 2020-12-07 2025-10-17 株式会社迪思科 SiC锭的加工方法和激光加工装置
CN113658850A (zh) 2021-07-06 2021-11-16 华为技术有限公司 复合衬底及其制备方法、半导体器件、电子设备
JP7807212B2 (ja) * 2021-10-29 2026-01-27 株式会社ディスコ 基板の製造方法
CN114670288B (zh) * 2022-03-08 2023-08-15 海目星激光科技集团股份有限公司 超声波裂片方法及裂片装置
CN114473188A (zh) * 2022-03-28 2022-05-13 杭州乾晶半导体有限公司 一种用于剥离晶片的激光加工方法、装置
JP2024042807A (ja) * 2022-09-16 2024-03-29 キオクシア株式会社 レーザー加工装置、レーザー剥離方法および半導体装置の製造方法
CN115770946B (zh) * 2022-12-09 2024-01-23 苏州龙驰半导体科技有限公司 一种晶圆切割方法
JP7398852B1 (ja) 2023-06-23 2023-12-15 有限会社ドライケミカルズ 半導体結晶ウェハの製造装置および製造方法
JP7429080B1 (ja) 2023-11-28 2024-02-07 有限会社ドライケミカルズ 半導体結晶ウェハの製造装置および製造方法
CN119328910B (zh) * 2023-08-14 2025-07-01 西湖仪器(杭州)技术有限公司 一种半导体晶片生成方法
CN117020397A (zh) * 2023-09-20 2023-11-10 北京理工大学 一种基于时空同步聚焦激光的碳化硅晶锭剥片方法
CN120715448A (zh) * 2025-06-28 2025-09-30 山西烁科晶体有限公司 一种剥离碳化硅晶锭的方法及系统

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CN105023973A (zh) * 2009-04-21 2015-11-04 泰特拉桑有限公司 形成太阳能电池中的结构的方法
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JP5917862B2 (ja) 2011-08-30 2016-05-18 浜松ホトニクス株式会社 加工対象物切断方法
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JP5917677B1 (ja) * 2014-12-26 2016-05-18 エルシード株式会社 ＳｉＣ材料の加工方法
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JP6486240B2 (ja) * 2015-08-18 2019-03-20 株式会社ディスコ ウエーハの加工方法
JP6604891B2 (ja) * 2016-04-06 2019-11-13 株式会社ディスコ ウエーハの生成方法
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JP2018093046A (ja) * 2016-12-02 2018-06-14 株式会社ディスコ ウエーハ生成方法
JP6773539B2 (ja) * 2016-12-06 2020-10-21 株式会社ディスコ ウエーハ生成方法

Also Published As

Publication number Publication date
KR20180063832A (ko) 2018-06-12
TW201825221A (zh) 2018-07-16
DE102017220758B4 (de) 2024-09-26
CN108145307B (zh) 2021-12-07
DE102017220758A1 (de) 2018-06-07
US10201907B2 (en) 2019-02-12
TWI732065B (zh) 2021-07-01
US20180154542A1 (en) 2018-06-07
CN108145307A (zh) 2018-06-12
MY186577A (en) 2021-07-27
JP2018093046A (ja) 2018-06-14

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