RU2012130044A - METHOD FOR PRODUCING A MICROWAVE FIELD TRANSISTOR - Google Patents
METHOD FOR PRODUCING A MICROWAVE FIELD TRANSISTOR Download PDFInfo
- Publication number
- RU2012130044A RU2012130044A RU2012130044/28A RU2012130044A RU2012130044A RU 2012130044 A RU2012130044 A RU 2012130044A RU 2012130044/28 A RU2012130044/28 A RU 2012130044/28A RU 2012130044 A RU2012130044 A RU 2012130044A RU 2012130044 A RU2012130044 A RU 2012130044A
- Authority
- RU
- Russia
- Prior art keywords
- transistor
- ions
- microwave field
- plate
- type
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract 3
- 229910052710 silicon Inorganic materials 0.000 claims abstract 4
- 239000010703 silicon Substances 0.000 claims abstract 4
- -1 silicon ions Chemical class 0.000 claims abstract 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract 2
- 230000015572 biosynthetic process Effects 0.000 claims abstract 2
- 229910052796 boron Inorganic materials 0.000 claims abstract 2
- 230000005669 field effect Effects 0.000 claims abstract 2
- 238000002513 implantation Methods 0.000 claims abstract 2
- 150000002500 ions Chemical class 0.000 claims abstract 2
- 239000004065 semiconductor Substances 0.000 claims abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 claims 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
Способ изготовления СВЧ полевого транзистора, включающий создание n-n-i типа полупроводниковой структуры путем ионного легирования полуизолирующих пластин арсенида галлия ионами кремния, отличающийся тем, что после формирования n-n-i типа структуры и топологических элементов транзистора на этой структуре, проводится дополнительное легирование пластины ионами кремния и имплантация в пластину ионов бора, вследствие чего значительно сокращается канал транзистора, а на открытой поверхности n-n-i структуры формируется пассивный слабопроводящий слой.A method of manufacturing a microwave field-effect transistor, including the creation of an nni type of semiconductor structure by ion-doping semi-insulating gallium arsenide plates with silicon ions, characterized in that after the formation of the nni type of structure and topological elements of the transistor on this structure, additional doping of the plate with silicon ions and implantation of ions into the plate boron, as a result of which the transistor channel is significantly reduced, and on the open surface nni of the structure a passive weakly conducting layer.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2012130044/28A RU2523060C2 (en) | 2012-07-17 | 2012-07-17 | Method of making microwave field-effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2012130044/28A RU2523060C2 (en) | 2012-07-17 | 2012-07-17 | Method of making microwave field-effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RU2012130044A true RU2012130044A (en) | 2014-01-27 |
| RU2523060C2 RU2523060C2 (en) | 2014-07-20 |
Family
ID=49956692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2012130044/28A RU2523060C2 (en) | 2012-07-17 | 2012-07-17 | Method of making microwave field-effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| RU (1) | RU2523060C2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2671312C2 (en) * | 2016-01-26 | 2018-10-30 | Акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (АО "НИИПП") | High-frequency field transistor with the additional field electrode manufacturing method |
| RU2723981C1 (en) * | 2019-08-06 | 2020-06-18 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) | Semiconductor device manufacturing method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU1827143A3 (en) * | 1991-04-18 | 1996-06-27 | Товарищество с ограниченной ответственностью "КМК" | Method of manufacture of power silicon transistor |
| US7368371B2 (en) * | 2006-06-16 | 2008-05-06 | Chip Integration Tech. Co., Ltd. | Silicon carbide Schottky diode and method of making the same |
| RU2349987C1 (en) * | 2007-07-17 | 2009-03-20 | Открытое акционерное общество "ОКБ-Планета" | Method of field effect transistor production with schottky barrier |
| RU2361319C1 (en) * | 2008-01-09 | 2009-07-10 | Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП НПП "Исток") | Production method of super-high frequency (shf) field-effect transistor with schottki barrier |
| RU2436186C2 (en) * | 2010-01-27 | 2011-12-10 | Открытое акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (ОАО "НИИПП") | Method to manufacture field transistors with self-aligned gate of submicron length |
-
2012
- 2012-07-17 RU RU2012130044/28A patent/RU2523060C2/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| RU2523060C2 (en) | 2014-07-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201613098A (en) | Semiconductor device | |
| EP2879189A3 (en) | Solar cell and method of manufacturing the same | |
| TW201613105A (en) | Semiconductor device and manufacturing method thereof | |
| SG10201804609UA (en) | Semiconductor device and manufacturing method thereof | |
| EP3514836A3 (en) | Gate contact structure over active gate and method to fabricate same | |
| EP2755237A3 (en) | Trench MOS gate semiconductor device and method of fabricating the same | |
| MY182653A (en) | Self-aligned gate edge and local interconnect and method to fabricate same | |
| MX373080B (en) | MANUFACTURING A SOLAR CELL EMITTING REGION USING ION IMPLANTATION. | |
| EP2846358A3 (en) | Semiconductor device and manufacturing method thereof | |
| GB2529583A (en) | Non-planar semiconductor device having doped sub-fin region and method to fabricate same | |
| WO2014172159A8 (en) | Defective p-n junction for backgated fully depleted silicon on insulator mosfet | |
| GB2571652A (en) | Vertical transistors with merged active area regions | |
| JP2014143419A5 (en) | ||
| PH12016501871A1 (en) | Solar cells with tunnel dielectrics | |
| JP2017527110A5 (en) | ||
| TW201613107A (en) | Semiconductor device and method for manufacturing semiconductor device | |
| TW201714253A (en) | Method of making embedded memory device with silicon-on-insulator substrate | |
| TW201712873A (en) | High electron mobility transistors with localized sub-fin isolation | |
| TW201614838A (en) | Semiconductor device and methods for forming the same | |
| GB2530197A (en) | Tunneling field effect transistors (TFETS) with undoped drain underlap wrap-around regions | |
| GB2522597A (en) | Lattice mismatched hetero-epitaxial film | |
| EP2782122A3 (en) | Manufacturing method of JFET semiconductor device and JFET semiconductor device | |
| EP4060749A3 (en) | Semiconductor device having group iii-v material active region and graded gate dielectric | |
| TW201614736A (en) | Manufacturing method of semiconductor device and semiconductor device | |
| WO2014140000A3 (en) | Lateral single-photon avalanche diode and their manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | The patent is invalid due to non-payment of fees |
Effective date: 20150718 |