RU2012142922A - Пленкообразующий раствор для диффузии бора - Google Patents
Пленкообразующий раствор для диффузии бора Download PDFInfo
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Abstract
1. Пленкообразующий раствор, применяемый для диффузии бора в кремниевую подложку с целью образования диффузионного слоя р-типа, включающий соединение бора, органическое связующее, соединение кремния, предшественник оксида алюминия и воду и/или органический растворитель.2. Пленкообразующий раствор по п.1, в котором соединение бора присутствует в количестве до 4 мас.% пленкообразующего раствора.3. Пленкообразующий раствор по п.1, в котором органическим связующим является поливиниловый спирт, присутствующий в количестве до 4 мас.% пленкообразующего раствора.4. Пленкообразующий раствор по п.1, в котором соединением кремния является диоксид кремния, присутствующий в количестве до 5 мас.% пленкообразующего раствора.5. Пленкообразующий раствор по п.1, в котором предшественником оксида алюминия является соединение, способное образовывать оксид алюминия при термической обработке и присутствующее в количестве до 8 мас.% пленкообразующего раствора.6. Пленкообразующий раствор по п.1, где вязкость раствора составляет от 80 до 140 мПа·с при 25ºC.7. Способ получения полупроводникового устройства с использованием пленкообразующего раствора по п.1.8. Способ по п.7, в котором полупроводниковым устройством является солнечный элемент.9. Способ по п.8, включающий стадии:обеспечение кремниевой подложки n-типа с текстурой,нанесение пленкообразующего раствора по п.1 на одну поверхность кремниевой подложки,образование диффузионного слоя р-типа,образование диффузионного слоя n-типа на другой поверхности кремниевой подложки,образование антибликового покрытия на каждом диффузионном слое иобразование электродов.10. Полупроводниковое устройст�
Claims (11)
1. Пленкообразующий раствор, применяемый для диффузии бора в кремниевую подложку с целью образования диффузионного слоя р-типа, включающий соединение бора, органическое связующее, соединение кремния, предшественник оксида алюминия и воду и/или органический растворитель.
2. Пленкообразующий раствор по п.1, в котором соединение бора присутствует в количестве до 4 мас.% пленкообразующего раствора.
3. Пленкообразующий раствор по п.1, в котором органическим связующим является поливиниловый спирт, присутствующий в количестве до 4 мас.% пленкообразующего раствора.
4. Пленкообразующий раствор по п.1, в котором соединением кремния является диоксид кремния, присутствующий в количестве до 5 мас.% пленкообразующего раствора.
5. Пленкообразующий раствор по п.1, в котором предшественником оксида алюминия является соединение, способное образовывать оксид алюминия при термической обработке и присутствующее в количестве до 8 мас.% пленкообразующего раствора.
6. Пленкообразующий раствор по п.1, где вязкость раствора составляет от 80 до 140 мПа·с при 25ºC.
7. Способ получения полупроводникового устройства с использованием пленкообразующего раствора по п.1.
8. Способ по п.7, в котором полупроводниковым устройством является солнечный элемент.
9. Способ по п.8, включающий стадии:
обеспечение кремниевой подложки n-типа с текстурой,
нанесение пленкообразующего раствора по п.1 на одну поверхность кремниевой подложки,
образование диффузионного слоя р-типа,
образование диффузионного слоя n-типа на другой поверхности кремниевой подложки,
образование антибликового покрытия на каждом диффузионном слое и
образование электродов.
10. Полупроводниковое устройство, которое получают способом по п.7.
11. Солнечный элемент, который получают способом по п.8.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011220051 | 2011-10-04 | ||
| JP2011-220051 | 2011-10-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RU2012142922A true RU2012142922A (ru) | 2014-04-20 |
| RU2615134C2 RU2615134C2 (ru) | 2017-04-04 |
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| Application Number | Title | Priority Date | Filing Date |
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| RU2012142922A RU2615134C2 (ru) | 2011-10-04 | 2012-10-08 | Пленкообразующий раствор для диффузии бора |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US9181615B2 (ru) |
| EP (1) | EP2578721B1 (ru) |
| JP (2) | JP2013093563A (ru) |
| KR (1) | KR20130037173A (ru) |
| CN (1) | CN103059666B (ru) |
| AU (1) | AU2012233002B2 (ru) |
| MY (1) | MY168836A (ru) |
| RU (1) | RU2615134C2 (ru) |
| SG (1) | SG189631A1 (ru) |
| TW (1) | TW201331314A (ru) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130045560A1 (en) * | 2011-08-16 | 2013-02-21 | Kenneth P. MacWilliams | Techniques and systems for fabricating anti-reflective and passivation layers on solar cells |
| CN104205350B (zh) * | 2012-03-12 | 2016-07-06 | 三菱电机株式会社 | 太阳能电池单元的制造方法 |
| JP6099437B2 (ja) * | 2013-03-07 | 2017-03-22 | 東京応化工業株式会社 | 拡散剤組成物、及び不純物拡散層の形成方法 |
| CN103325668A (zh) * | 2013-06-04 | 2013-09-25 | 泰通(泰州)工业有限公司 | 一种晶体硅太阳能电池扩散源配方 |
| KR20150035189A (ko) | 2013-09-27 | 2015-04-06 | 엘지전자 주식회사 | 태양 전지 |
| JP6279878B2 (ja) * | 2013-10-31 | 2018-02-14 | 東京応化工業株式会社 | 太陽電池の製造方法 |
| CN103681936A (zh) * | 2013-11-29 | 2014-03-26 | 奥特斯维能源(太仓)有限公司 | 一种晶体硅非晶硅层叠电池及其制造方法 |
| EP3284111A1 (de) * | 2015-04-15 | 2018-02-21 | Merck Patent GmbH | Siebdruckbare bor-dotierpaste mit gleichzeitiger hemmung der phosphordiffusion bei co-diffusionsprozessen |
| US9525081B1 (en) * | 2015-12-28 | 2016-12-20 | Inventec Solar Energy Corporation | Method of forming a bifacial solar cell structure |
| WO2018083534A1 (en) * | 2016-11-03 | 2018-05-11 | Total Marketing Services | Surface treatment of solar cells |
| CN111370304B (zh) * | 2018-12-25 | 2023-03-28 | 天津环鑫科技发展有限公司 | 一种硼铝源及其配置方法 |
| CN112599410B (zh) * | 2020-12-16 | 2022-12-13 | 上海玻纳电子科技有限公司 | 提高n型单晶硅片硼扩散的方法 |
| CN118648122A (zh) * | 2022-02-10 | 2024-09-13 | 东丽株式会社 | 杂质扩散组合物和使用该组合物制造太阳能电池的制造方法 |
| CN114999903B (zh) * | 2022-04-15 | 2025-05-13 | 山东芯源微电子有限公司 | 一种减小硅片扩散硼硅玻璃层厚度的硼膜制造方法 |
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| JPS5773931A (en) | 1980-10-28 | 1982-05-08 | Tokyo Denshi Kagaku Kabushiki | Boron-diffusing source for semiconductor element and diffusing method thereby |
| SU1338709A1 (ru) * | 1986-01-31 | 2000-06-10 | Всесоюзный Электротехнический Институт Им.В.И.Ленина | Пленкообразующий раствор для получения легированных бором диффузионных слоев |
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- 2012-09-26 JP JP2012211773A patent/JP2013093563A/ja active Pending
- 2012-09-27 MY MYPI2012004284A patent/MY168836A/en unknown
- 2012-09-29 CN CN201210548232.1A patent/CN103059666B/zh active Active
- 2012-10-01 AU AU2012233002A patent/AU2012233002B2/en not_active Ceased
- 2012-10-02 US US13/633,356 patent/US9181615B2/en active Active
- 2012-10-04 KR KR1020120109830A patent/KR20130037173A/ko not_active Withdrawn
- 2012-10-04 SG SG2012074068A patent/SG189631A1/en unknown
- 2012-10-04 TW TW101136672A patent/TW201331314A/zh unknown
- 2012-10-04 EP EP12187177.6A patent/EP2578721B1/en active Active
- 2012-10-08 RU RU2012142922A patent/RU2615134C2/ru active
-
2016
- 2016-09-15 JP JP2016180231A patent/JP6269760B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| MY168836A (en) | 2018-12-04 |
| US9181615B2 (en) | 2015-11-10 |
| CN103059666A (zh) | 2013-04-24 |
| AU2012233002A1 (en) | 2013-04-18 |
| EP2578721A2 (en) | 2013-04-10 |
| JP2017028303A (ja) | 2017-02-02 |
| JP6269760B2 (ja) | 2018-01-31 |
| EP2578721B1 (en) | 2018-12-19 |
| TW201331314A (zh) | 2013-08-01 |
| SG189631A1 (en) | 2013-05-31 |
| AU2012233002B2 (en) | 2014-06-19 |
| KR20130037173A (ko) | 2013-04-15 |
| CN103059666B (zh) | 2017-04-12 |
| US20130081691A1 (en) | 2013-04-04 |
| RU2615134C2 (ru) | 2017-04-04 |
| JP2013093563A (ja) | 2013-05-16 |
| EP2578721A3 (en) | 2014-11-26 |
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