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RU2011145180A - SYNTHESIS OF GALLIUM OXIDE NANOPARTICLES IN SUPERCRITICAL WATER - Google Patents

SYNTHESIS OF GALLIUM OXIDE NANOPARTICLES IN SUPERCRITICAL WATER Download PDF

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Publication number
RU2011145180A
RU2011145180A RU2011145180/05A RU2011145180A RU2011145180A RU 2011145180 A RU2011145180 A RU 2011145180A RU 2011145180/05 A RU2011145180/05 A RU 2011145180/05A RU 2011145180 A RU2011145180 A RU 2011145180A RU 2011145180 A RU2011145180 A RU 2011145180A
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RU
Russia
Prior art keywords
supercritical water
gallium oxide
oxide nanoparticles
synthesis
gallium
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RU2011145180/05A
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Russian (ru)
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RU2487835C2 (en
Inventor
Владимир Ильич Аникеев
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Учреждение Российской академии наук Институт катализа им. Г.К. Борескова Сибирского отделения РАН
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Priority to RU2011145180/05A priority Critical patent/RU2487835C2/en
Publication of RU2011145180A publication Critical patent/RU2011145180A/en
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00Technologies relating to chemical industry
    • Y02P20/50Improvements relating to the production of bulk chemicals
    • Y02P20/54Improvements relating to the production of bulk chemicals using solvents, e.g. supercritical solvents or ionic liquids

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Abstract

1. Способ получения наночастиц оксида галлия GaO, отличающийся тем, что получения наночастиц оксида галлия осуществляют смешением 0,1М водного раствора соли галлия Ga(NO)8HO со сверхкритической водой при температуре реакции 365-384°С и давлении 220-240 атм.2. Способ по п.1, отличающийся тем, что отношение раствора соли галлия Ga(NO)8HO к сверхкритической воде равно, предпочтительно, 2:101. A method of obtaining nanoparticles of gallium oxide GaO, characterized in that the preparation of nanoparticles of gallium oxide is carried out by mixing 0.1 M aqueous solution of gallium salt Ga (NO) 8HO with supercritical water at a reaction temperature of 365-384 ° C and a pressure of 220-240 atm. ... The method according to claim 1, characterized in that the ratio of the solution of gallium salt Ga (NO) 8HO to supercritical water is preferably 2:10

Claims (2)

1. Способ получения наночастиц оксида галлия Ga2O3, отличающийся тем, что получения наночастиц оксида галлия осуществляют смешением 0,1М водного раствора соли галлия Ga(NO3)3 8H2O со сверхкритической водой при температуре реакции 365-384°С и давлении 220-240 атм.1. A method of producing gallium oxide nanoparticles of Ga 2 O 3 , characterized in that the preparation of gallium oxide nanoparticles is carried out by mixing a 0.1 M aqueous solution of gallium salt of Ga (NO 3 ) 3 8H 2 O with supercritical water at a reaction temperature of 365-384 ° C and pressure 220-240 atm. 2. Способ по п.1, отличающийся тем, что отношение раствора соли галлия Ga(NO3)3 8H2O к сверхкритической воде равно, предпочтительно, 2:10 2. The method according to claim 1, characterized in that the ratio of the solution of the gallium salt Ga (NO 3 ) 3 8H 2 O to supercritical water is preferably 2:10
RU2011145180/05A 2011-11-07 2011-11-07 Synthesis of gallium oxide nanoparticles in supercritical water RU2487835C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU2011145180/05A RU2487835C2 (en) 2011-11-07 2011-11-07 Synthesis of gallium oxide nanoparticles in supercritical water

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU2011145180/05A RU2487835C2 (en) 2011-11-07 2011-11-07 Synthesis of gallium oxide nanoparticles in supercritical water

Related Parent Applications (1)

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RU2010109133/05A Division RU2438982C2 (en) 2010-03-11 2010-03-11 Synthesis of nanoparticles of composite metal oxides in supercritical water

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RU2011145180A true RU2011145180A (en) 2013-05-20
RU2487835C2 RU2487835C2 (en) 2013-07-20

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114585776A (en) * 2019-11-05 2022-06-03 日本碍子株式会社 Process for producing gallium oxide crystal
CN116812967A (en) * 2023-04-28 2023-09-29 湖北九峰山实验室 Preparation of p-type beta-Ga 2 O 3 beta-Ga prepared by the method 2 O 3 And applications thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU1745679A1 (en) * 1990-05-07 1992-07-07 Научно-исследовательский институт физико-химических проблем Белорусского государственного университета им.В.И.Ленина Process for preparing highly dispersing metal oxide
KR100853199B1 (en) * 2007-03-28 2008-08-20 한국전자통신연구원 Method of manufacturing oxide-based nanostructure

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114585776A (en) * 2019-11-05 2022-06-03 日本碍子株式会社 Process for producing gallium oxide crystal
US12163252B2 (en) 2019-11-05 2024-12-10 Ngk Insulators, Ltd. Method for producing an α- or β-gallium oxide crystal by bring an aqueous solution including Ga ions into a supercritical state
CN114585776B (en) * 2019-11-05 2025-06-03 日本碍子株式会社 Method for preparing gallium oxide crystals
CN116812967A (en) * 2023-04-28 2023-09-29 湖北九峰山实验室 Preparation of p-type beta-Ga 2 O 3 beta-Ga prepared by the method 2 O 3 And applications thereof

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Effective date: 20150312