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PL228665A1 - - Google Patents

Info

Publication number
PL228665A1
PL228665A1 PL22866580A PL22866580A PL228665A1 PL 228665 A1 PL228665 A1 PL 228665A1 PL 22866580 A PL22866580 A PL 22866580A PL 22866580 A PL22866580 A PL 22866580A PL 228665 A1 PL228665 A1 PL 228665A1
Authority
PL
Poland
Application number
PL22866580A
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of PL228665A1 publication Critical patent/PL228665A1/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211Gated diodes
    • H10D12/212Gated diodes having PN junction gates, e.g. field controlled diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • H10D48/345Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • H10W10/019
    • H10W10/10
PL22866580A 1979-12-28 1980-12-22 PL228665A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10777579A 1979-12-28 1979-12-28

Publications (1)

Publication Number Publication Date
PL228665A1 true PL228665A1 (es) 1981-09-04

Family

ID=22318408

Family Applications (1)

Application Number Title Priority Date Filing Date
PL22866580A PL228665A1 (es) 1979-12-28 1980-12-22

Country Status (21)

Country Link
JP (1) JPS56103467A (es)
KR (1) KR840002413B1 (es)
AU (1) AU534874B2 (es)
BE (1) BE886821A (es)
CA (1) CA1145057A (es)
CH (1) CH652863A5 (es)
DD (1) DD156039A5 (es)
DE (1) DE3048702A1 (es)
DK (1) DK549780A (es)
ES (1) ES498097A0 (es)
FR (1) FR2473790A1 (es)
GB (1) GB2066569B (es)
HK (1) HK69684A (es)
HU (1) HU181246B (es)
IE (1) IE50697B1 (es)
IL (1) IL61780A (es)
IT (1) IT1134896B (es)
NL (1) NL8007051A (es)
PL (1) PL228665A1 (es)
SE (1) SE453621B (es)
SG (1) SG35184G (es)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4467344A (en) * 1981-12-23 1984-08-21 At&T Bell Telephone Laboratories, Incorporated Bidirectional switch using two gated diode switches in a single dielectrically isolated tub
US4573065A (en) * 1982-12-10 1986-02-25 At&T Bell Laboratories Radial high voltage switch structure

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1039915A (en) * 1964-05-25 1966-08-24 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
US3417393A (en) * 1967-10-18 1968-12-17 Texas Instruments Inc Integrated circuit modular radar antenna
DE2102103A1 (de) * 1970-01-22 1971-07-29 Rca Corp Durch Feldeffekt gesteuerte Diode
JPS5135114B1 (es) * 1970-12-28 1976-09-30
US3725683A (en) * 1971-02-03 1973-04-03 Wescom Discrete and integrated-type circuit
DE2133430A1 (de) * 1971-07-05 1973-01-18 Siemens Ag Planar-vierschichtdiode
DE2241600A1 (de) * 1971-08-26 1973-03-01 Dionics Inc Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung
JPS5032942U (es) * 1973-07-23 1975-04-10
JPS5210061A (en) * 1975-07-15 1977-01-26 Hitachi Ltd Thyristor circuit
US4130827A (en) * 1976-12-03 1978-12-19 Bell Telephone Laboratories, Incorporated Integrated circuit switching network using low substrate leakage current thyristor construction
JPS5412682A (en) * 1977-06-30 1979-01-30 Nec Corp Thyristor
GB1587540A (en) * 1977-12-20 1981-04-08 Philips Electronic Associated Gate turn-off diodes and arrangements including such diodes
JPS6412106B2 (es) * 1978-12-20 1989-02-28 Ei Teii Ando Teii Tekunorojiizu Inc

Also Published As

Publication number Publication date
DE3048702A1 (de) 1981-09-10
AU534874B2 (en) 1984-02-16
HK69684A (en) 1984-09-14
IE50697B1 (en) 1986-06-25
KR840002413B1 (ko) 1984-12-27
ES8201376A1 (es) 1981-12-16
IL61780A (en) 1983-07-31
NL8007051A (nl) 1981-07-16
IT1134896B (it) 1986-08-20
AU6544980A (en) 1981-07-02
CA1145057A (en) 1983-04-19
CH652863A5 (de) 1985-11-29
JPS56103467A (en) 1981-08-18
DD156039A5 (de) 1982-07-21
SG35184G (en) 1985-02-08
FR2473790A1 (fr) 1981-07-17
IT8026947A0 (it) 1980-12-24
DK549780A (da) 1981-06-29
SE8008851L (sv) 1981-06-29
HU181246B (en) 1983-06-28
SE453621B (sv) 1988-02-15
ES498097A0 (es) 1981-12-16
BE886821A (fr) 1981-04-16
KR830004678A (ko) 1983-07-16
IE802604L (en) 1981-06-28
IL61780A0 (en) 1981-01-30
FR2473790B1 (es) 1985-03-08
GB2066569B (en) 1983-09-14
GB2066569A (en) 1981-07-08

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