SE8008851L - Halvledarswitch for hog spenning - Google Patents

Halvledarswitch for hog spenning

Info

Publication number: SE8008851L
Authority: SE; Sweden
Prior art keywords: region; gate region; type; high voltage; anode
Prior art date: 1979-12-28

Application number

SE8008851A

Other languages

Unknown language ( )

English (en)

Other versions

SE453621B (sv

Inventor

A R Hartman

T J Riley

P W Shackle

Original Assignee

Western Electric Co

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1979-12-28

Filing date

1980-12-16

Publication date

1981-06-29

1980-12-16 Application filed by Western Electric Co filed Critical Western Electric Co

1981-06-29 Publication of SE8008851L publication Critical patent/SE8008851L/sv

1988-02-15 Publication of SE453621B publication Critical patent/SE453621B/sv

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/211—Gated diodes
- H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
- H10W10/019—
- H10W10/10—

Landscapes

Thyristors (AREA)
Use Of Switch Circuits For Exchanges And Methods Of Control Of Multiplex Exchanges (AREA)
Bipolar Transistors (AREA)
Junction Field-Effect Transistors (AREA)

SE8008851A 1979-12-28 1980-12-16 Switchanordning SE453621B (sv)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US10777579A	1979-12-28	1979-12-28

Publications (2)

Publication Number	Publication Date
SE8008851L true SE8008851L (sv)	1981-06-29
SE453621B SE453621B (sv)	1988-02-15

Family

ID=22318408

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
SE8008851A SE453621B (sv)	1979-12-28	1980-12-16	Switchanordning

Country Status (21)

Country	Link
JP (1)	JPS56103467A (sv)
KR (1)	KR840002413B1 (sv)
AU (1)	AU534874B2 (sv)
BE (1)	BE886821A (sv)
CA (1)	CA1145057A (sv)
CH (1)	CH652863A5 (sv)
DD (1)	DD156039A5 (sv)
DE (1)	DE3048702A1 (sv)
DK (1)	DK549780A (sv)
ES (1)	ES498097A0 (sv)
FR (1)	FR2473790A1 (sv)
GB (1)	GB2066569B (sv)
HK (1)	HK69684A (sv)
HU (1)	HU181246B (sv)
IE (1)	IE50697B1 (sv)
IL (1)	IL61780A (sv)
IT (1)	IT1134896B (sv)
NL (1)	NL8007051A (sv)
PL (1)	PL228665A1 (sv)
SE (1)	SE453621B (sv)
SG (1)	SG35184G (sv)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4467344A (en) *	1981-12-23	1984-08-21	At&T Bell Telephone Laboratories, Incorporated	Bidirectional switch using two gated diode switches in a single dielectrically isolated tub
US4573065A (en) *	1982-12-10	1986-02-25	At&T Bell Laboratories	Radial high voltage switch structure

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB1039915A (en) *	1964-05-25	1966-08-24	Standard Telephones Cables Ltd	Improvements in or relating to semiconductor devices
US3417393A (en) *	1967-10-18	1968-12-17	Texas Instruments Inc	Integrated circuit modular radar antenna
DE2102103A1 (de) *	1970-01-22	1971-07-29	Rca Corp	Durch Feldeffekt gesteuerte Diode
JPS5135114B1 (sv) *	1970-12-28	1976-09-30
US3725683A (en) *	1971-02-03	1973-04-03	Wescom	Discrete and integrated-type circuit
DE2133430A1 (de) *	1971-07-05	1973-01-18	Siemens Ag	Planar-vierschichtdiode
DE2241600A1 (de) *	1971-08-26	1973-03-01	Dionics Inc	Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung
JPS5032942U (sv) *	1973-07-23	1975-04-10
JPS5210061A (en) *	1975-07-15	1977-01-26	Hitachi Ltd	Thyristor circuit
US4130827A (en) *	1976-12-03	1978-12-19	Bell Telephone Laboratories, Incorporated	Integrated circuit switching network using low substrate leakage current thyristor construction
JPS5412682A (en) *	1977-06-30	1979-01-30	Nec Corp	Thyristor
GB1587540A (en) *	1977-12-20	1981-04-08	Philips Electronic Associated	Gate turn-off diodes and arrangements including such diodes
WO1980001337A1 (en) *	1978-12-20	1980-06-26	Western Electric Co	High voltage dielectrically isolated solid-state switch

1980
- 1980-10-30 CA CA000363569A patent/CA1145057A/en not_active Expired
- 1980-12-12 IE IE2604/80A patent/IE50697B1/en unknown
- 1980-12-16 GB GB8040186A patent/GB2066569B/en not_active Expired
- 1980-12-16 SE SE8008851A patent/SE453621B/sv not_active IP Right Cessation
- 1980-12-17 AU AU65449/80A patent/AU534874B2/en not_active Ceased
- 1980-12-19 CH CH9424/80A patent/CH652863A5/de not_active IP Right Cessation
- 1980-12-19 DD DD80226369A patent/DD156039A5/de unknown
- 1980-12-22 IL IL61780A patent/IL61780A/xx unknown
- 1980-12-22 PL PL22866580A patent/PL228665A1/xx unknown
- 1980-12-23 BE BE0/203288A patent/BE886821A/fr not_active IP Right Cessation
- 1980-12-23 ES ES498097A patent/ES498097A0/es active Granted
- 1980-12-23 HU HU80803113A patent/HU181246B/hu unknown
- 1980-12-23 DE DE19803048702 patent/DE3048702A1/de not_active Withdrawn
- 1980-12-23 DK DK549780A patent/DK549780A/da not_active Application Discontinuation
- 1980-12-24 FR FR8027441A patent/FR2473790A1/fr active Granted
- 1980-12-24 NL NL8007051A patent/NL8007051A/nl not_active Application Discontinuation
- 1980-12-24 IT IT26947/80A patent/IT1134896B/it active
- 1980-12-26 KR KR1019800004953A patent/KR840002413B1/ko not_active Expired
- 1980-12-27 JP JP18942880A patent/JPS56103467A/ja active Pending
1984
- 1984-05-04 SG SG351/84A patent/SG35184G/en unknown
- 1984-09-06 HK HK696/84A patent/HK69684A/xx unknown

Also Published As

Publication number	Publication date
IT8026947A0 (it)	1980-12-24
SG35184G (en)	1985-02-08
IL61780A (en)	1983-07-31
IE802604L (en)	1981-06-28
IL61780A0 (en)	1981-01-30
DE3048702A1 (de)	1981-09-10
GB2066569B (en)	1983-09-14
DK549780A (da)	1981-06-29
KR840002413B1 (ko)	1984-12-27
KR830004678A (ko)	1983-07-16
SE453621B (sv)	1988-02-15
CA1145057A (en)	1983-04-19
PL228665A1 (sv)	1981-09-04
CH652863A5 (de)	1985-11-29
AU6544980A (en)	1981-07-02
JPS56103467A (en)	1981-08-18
NL8007051A (nl)	1981-07-16
ES8201376A1 (es)	1981-12-16
IT1134896B (it)	1986-08-20
FR2473790A1 (fr)	1981-07-17
DD156039A5 (de)	1982-07-21
FR2473790B1 (sv)	1985-03-08
GB2066569A (en)	1981-07-08
ES498097A0 (es)	1981-12-16
AU534874B2 (en)	1984-02-16
HK69684A (en)	1984-09-14
IE50697B1 (en)	1986-06-25
HU181246B (en)	1983-06-28
BE886821A (fr)	1981-04-16

Publication	Publication Date	Title
EP0111803B1 (en)	1989-03-01	Lateral insulated-gate rectifier structures
JPS55148464A (en)	1980-11-19	Mos semiconductor device and its manufacture
JPH0439770B2 (sv)	1992-06-30
SE7415065L (sv)	1975-06-04
JPS5539619A (en)	1980-03-19	Thyristor
GB1161500A (en)	1969-08-13	Improvements in Semiconductor Rectifier With Improved Turn-On and Turn-Off Characteristics
SE7502640L (sv)	1975-09-12
GB1057823A (en)	1967-02-08	Improvements in semiconductor switch
JPS5493981A (en)	1979-07-25	Semiconductor device
GB1390135A (en)	1975-04-09	Insulated gate semiconductor device
GB983266A (en)	1965-02-17	Semiconductor switching devices
SE8008851L (sv)	1981-06-29	Halvledarswitch for hog spenning
GB1475320A (en)	1977-06-01	Semiconductor devices
EP0103934B1 (en)	1989-07-19	Insulated-gate field-effect transistors
US3493824A (en)	1970-02-03	Insulated-gate field effect transistors utilizing a high resistivity substrate
US4602268A (en)	1986-07-22	High voltage dielectrically isolated dual gate solid-state switch
GB1365392A (en)	1974-09-04	Semiconductor switching device
SE8005703L (sv)	1980-08-13	Dielektriskt isolerad halvledaromkopplare
US4586073A (en)	1986-04-29	High voltage junction solid-state switch
JPS568873A (en)	1981-01-29	Bipolar transistor
US4688071A (en)	1987-08-18	Circuit arrangement comprising a phototransistor
JPS57173974A (en)	1982-10-26	Semiconductor device
SU789019A1 (ru)	1982-07-07	Полупроводниковый прибор
JPS5376675A (en)	1978-07-07	High breakdown voltage field effect power transistor
JPS5681970A (en)	1981-07-04	Semiconductor switching device

Legal Events

Date	Code	Title	Description
1995-01-31	NUG	Patent has lapsed	Ref document number: 8008851-1 Effective date: 19910704 Format of ref document f/p: F

Date

Code

Title

Description

1995-01-31

NUG

Patent has lapsed

Ref document number: 8008851-1

Effective date: 19910704

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