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KR930007818Y1 - Solution temperature control device for semiconductor device manufacturing - Google Patents

Solution temperature control device for semiconductor device manufacturing Download PDF

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Publication number
KR930007818Y1
KR930007818Y1 KR2019910002300U KR910002300U KR930007818Y1 KR 930007818 Y1 KR930007818 Y1 KR 930007818Y1 KR 2019910002300 U KR2019910002300 U KR 2019910002300U KR 910002300 U KR910002300 U KR 910002300U KR 930007818 Y1 KR930007818 Y1 KR 930007818Y1
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temperature
solution
temperature control
unit
signal
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KR920017083U (en
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백승호
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금성일렉트론 주식회사
문정환
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    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05DSYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00Control of temperature
    • G05D23/19Control of temperature characterised by the use of electric means

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Temperature (AREA)

Abstract

내용 없음.No content.

Description

반도체 장치 제조용 용액온도 제어장치Solution temperature control device for semiconductor device manufacturing

제 1 도는 종래의 회로도.1 is a conventional circuit diagram.

제 2 도는 짧은 시간에 설정 온도에 도달할 경우를 나타낸 그래프.2 is a graph showing a case where the set temperature is reached in a short time.

제 3 도는 여러스텝의 경우를 나타낸 시간과 설정온도에 따른 그래프.3 is a graph of time and set temperature in the case of several steps.

제 4 도는 본 고안의 1실시예에 따른 회로도이다.4 is a circuit diagram according to an embodiment of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 온도설정부 2, 8 : 비교부1: temperature setting part 2, 8: comparison part

3 : 온도제어부 4 : 용기3: temperature control unit 4: container

5 : 히터부 6 : 온도센서부5: heater 6: temperature sensor

7 : 증폭부 9 : V/F 변환부7: Amplifier 9: V / F Converter

10 : 분주부 11 : 솔레노이드 밸브부10: dispensing part 11: solenoid valve part

본 고안은 반도체 장치 제조용 용액온도 제어에 관한 것으로, 특히 용액의 온도를 급상승 및 급강하시킬때 소요시간을 짧게 하고 여러 스텝별로 용액의 온도차가 필요한 공정에 적합하도록 한 반도체 장치 제조용 용액 온도제어 장치에 관한 것이다.The present invention relates to a solution temperature control for manufacturing a semiconductor device, and more particularly to a solution temperature control device for manufacturing a semiconductor device to shorten the time required when raising and lowering the temperature of the solution and to be suitable for processes requiring a temperature difference of the solution by several steps. will be.

종래에는 제 1 도에 도시한 바와같이 소정의 온도로 설정하기 위한 온도설정부(1)와, 설정된 온도와 용액의 온도를 비교하기 위한 비교부(2)와, 비교부(2)에서 비교된 값에 따라 용액의 온도를 제어하기 위한 온도제어부(3)와, 온도제어부(3)의 출력에 따라 용기(4)내의 용액을 가열시키기 위한 히터부(5)와, 용기(4)내의 용액의 온도를 감지하기 위한 온도센서부(6)와, 온도센서부(6)의 감지신호를 비교부(2)의 하나의 입력으로 하는 증폭부(7)로 구성하여 반도체 장치 제조시 소정의 온도에서 화학용액이 반응하도록 제어하였다.Conventionally, as shown in FIG. 1, the temperature setting unit 1 for setting to a predetermined temperature, the comparison unit 2 for comparing the set temperature and the temperature of the solution, and the comparison unit 2 have been compared. The temperature control part 3 for controlling the temperature of the solution according to the value, the heater part 5 for heating the solution in the container 4 according to the output of the temperature control part 3, and the solution of the solution in the container 4 The temperature sensor unit 6 for sensing the temperature and the amplifier 7 which uses the sensing signal of the temperature sensor unit 6 as one input of the comparator 2 are formed at a predetermined temperature in manufacturing a semiconductor device. The chemical solution was controlled to react.

즉, 소정의 온도로 설정하게 되면 온도 제어회로(3)에서 히터(5)를 가열시켜 온도를 상승시키고, 온도센서부(6)에서는 이 온도를 감지하고 감지된 신호가 비교부(2)로 피드백되어 설정된 소정의 온도와 비교되어 펄스폭제어를 하게 된다.That is, when the temperature is set to a predetermined temperature, the temperature control circuit 3 heats the heater 5 to increase the temperature, and the temperature sensor unit 6 senses this temperature and the detected signal is sent to the comparator 2. The pulse width control is performed in comparison with the predetermined temperature set back.

그러나, 이러한 종래기술은 설정온도까지 도달하기 위해서는 많은 시간이 요구되며, 소요시간을 짧게 하면 제 2 도의 A부분과 같이 불안정현상, 예를 들어 오버슈트 현상이 발생되는 문제점이 있었다.However, such a prior art requires a lot of time to reach the set temperature, and if the required time is shortened, there is a problem that an instability phenomenon, for example, an overshoot phenomenon occurs as shown in part A of FIG.

또한, 제 3 도와 같이 여러 스텝으로 온도차를 줄 경우에는 스텝과 스텝의 이동시 설정된 온도까지 안정되게 도달하기 위해서는 많은 시간이 소요되는 단점이 있었다.In addition, when the temperature difference is given in several steps as shown in the third diagram, it takes a long time to stably reach the set temperature when the step and the step are moved.

본 고안은 이와같은 문제점을 해결하기 위한 것으로, 본 고안의 목적은 설정된 온도와 용액의 온도차에 비례한 주파수를 분주하여 용기내의 솔레노이드 밸브를 제어하도록 한 반도체장치 제조용 용액온도 제어장치를 제공하는 것이다.The present invention is to solve such a problem, an object of the present invention is to provide a solution temperature control device for manufacturing a semiconductor device to control the solenoid valve in the container by dispensing a frequency proportional to the set temperature and the temperature difference of the solution.

이하, 본 고안을 첨부도면에 의하여 상세히 설명한다.Hereinafter, the present invention will be described in detail by the accompanying drawings.

제 4 도는 본 고안의 1실시예에 따른 회로도로서, 제 1 도와 동일 부호는 동일부분을 나타낸다.4 is a circuit diagram according to an embodiment of the present invention, in which the first reference numeral and the same reference numeral indicate the same parts.

제 4 도에 도시한 바와 같이, 본 고안은 제 1 도에 도시된 종래의 용액온도 제어장치에 제 1 도의 구성에 있어서 비교부(2)(본 고안에 있어서는 제 1 비교부)의 입력신호와 동일한 신호가 인가되어 비교하기 위한 제 2 비교부(8)와, 제 2 비교부(8)의 비교된 전압신호를 주파수 신호로 변환시키기 위한 V/F(Voltage/Frequency) 변환부(9)와, 변환된 주파수 신호를 분주하기 위한 분주부(10)와, 분주된 신호에 의해 제어되는 용기(4)내의 솔레노이드 밸브부(11)를 더 포함하여 구성한다.As shown in FIG. 4, the present invention is based on the input signal of the comparator 2 (first comparator in the present invention) in the configuration of FIG. A second comparator 8 for comparing and applying the same signal, and a V / F (Voltage / Frequency) converter 9 for converting the compared voltage signal of the second comparator 8 into a frequency signal. And a dividing unit 10 for dividing the converted frequency signal, and a solenoid valve portion 11 in the container 4 controlled by the divided signal.

동작을 살펴보면, 우선 온도 설정부(1), 제 1 비교부(2), 온도제어부(3), 히터부(5), 온도센서부(6), 증폭부(7)의 동작은 제 1 도에서 설명한 바와 같으므로 그 설명은 생략한다.Referring to the operation, first, the operation of the temperature setting unit 1, the first comparison unit 2, the temperature control unit 3, the heater unit 5, the temperature sensor unit 6, and the amplification unit 7 is shown in FIG. Since the description is the same, the description thereof is omitted.

제 2 비교부(8)에서는 제 1 비교부(2)와 동일한 인가신호, 즉 온도설정부(1)와 증폭부(7)의 출력신호가 인가되어 비교되며, 이 비교된 전압신호는 V/F 변환부(9)를 거치면서 입력된 전압신호에 비례하는 주파수 신호로 변환되고, 변환된 주파수는 분주부(10)를 거치면서 설정된 분주비로 분주되고, 이 분주된 신호에 따라 솔레노이드 밸브부(11)를 제어하여 용기(4)내의 용액이 설정된 온도값이 될 때까지 비례 제어되어 용액량을 제어하게 된다.In the second comparator 8, the same application signal as that of the first comparator 2, that is, the output signals of the temperature setting unit 1 and the amplification unit 7 is applied and compared, and the compared voltage signal is V / The frequency converter is converted into a frequency signal proportional to the input voltage signal while passing through the F converter 9, and the converted frequency is divided at the divided frequency ratio while passing through the division unit 10, and the solenoid valve unit ( 11) is controlled to be proportionally controlled until the solution in the container 4 reaches a set temperature value to control the amount of solution.

이상 설명한 바와같이, 본 고안에 따르면 짧은 시간내에 설정된 온도값에 도달할 수 있으므로 공정시간이 단축될 수 있으며 정밀도가 높은 이점이 있다.As described above, according to the present invention, since the set temperature value can be reached within a short time, the process time can be shortened and the precision is high.

특히 스텝수가 많은 공정에서의 온도제어를 빠르게 할 수 있으므로 여러 스텝으로 온도차를 줄 경우 현저한 효과를 얻을 수 있다.In particular, temperature control in a process with a large number of steps can be speeded up, and a significant effect can be obtained when the temperature difference is given in several steps.

더욱이, 본 고안은 상기 실시예에 한정되는 것이 아니고 각종 산업용 용액온도제어 장치로 사용될 수 있음은 물론이다.Moreover, the present invention is not limited to the above embodiment, of course, can be used as various industrial solution temperature control device.

Claims (1)

용액을 소정의 온도로 설정하기 위한 온도설정부(1), 상기 설정된 온도와 용액의 온도를 비교하기 위한 제 1 비교부(2), 상기 제 1 비교부(2)의 비교신호에 따라 용기(4)내의 상기 용액을 가열시키기 위한 히터부(5)를 제어하는 온도제어회로부(3)로 구성된 반도체 장치 제조용 용액온도 제어장치에 있어서, 상기 제 1 비교부(2)의 입력신호와 동일한 신호가 인가되는 제 2 비교부(8)와, 상기 제 2 비교부(8)에서 비교된 전압차에 비례하여 주파수로 변환사키는 V/F 변환부(9)와, 상기 변환된 주파수를 소정의 분주비로 분주시키기 위한 분주부(10)와, 상기 분주된 분주신호를 따라 상기 용기(4)내의 상기 용액이 상기 설정온도가 될 때까지 제어되는 솔레노이드 밸브부(11)가 더 포함됨을 특징으로 하는 반도체 장치 제조용 용액 온도 제어장치.According to the comparison signal of the temperature setting unit 1 for setting the solution to a predetermined temperature, the first comparison unit 2 for comparing the set temperature with the temperature of the solution, and the first comparison unit 2 ( 4) A solution temperature control apparatus for manufacturing a semiconductor device, comprising a temperature control circuit section 3 for controlling a heater section 5 for heating the solution in the above, wherein the same signal as that of the input signal of the first comparison section 2 The second comparator 8 to be applied, the V / F converter 9 converts the frequency in proportion to the voltage difference compared by the second comparator 8, and the frequency divided by the predetermined frequency division. And a solenoid valve unit 11 for controlling until the solution in the container 4 reaches the set temperature according to the dispensed dispensing signal. Solution temperature controller for device manufacturing.
KR2019910002300U 1991-02-18 1991-02-18 Solution temperature control device for semiconductor device manufacturing Expired - Fee Related KR930007818Y1 (en)

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Application Number Priority Date Filing Date Title
KR2019910002300U KR930007818Y1 (en) 1991-02-18 1991-02-18 Solution temperature control device for semiconductor device manufacturing

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Application Number Priority Date Filing Date Title
KR2019910002300U KR930007818Y1 (en) 1991-02-18 1991-02-18 Solution temperature control device for semiconductor device manufacturing

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KR920017083U KR920017083U (en) 1992-09-17
KR930007818Y1 true KR930007818Y1 (en) 1993-11-18

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KR2019910002300U Expired - Fee Related KR930007818Y1 (en) 1991-02-18 1991-02-18 Solution temperature control device for semiconductor device manufacturing

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