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KR900008069A - 실리콘 단결정의 제조장치 - Google Patents

실리콘 단결정의 제조장치

Info

Publication number
KR900008069A
KR900008069A KR1019890016352A KR890016352A KR900008069A KR 900008069 A KR900008069 A KR 900008069A KR 1019890016352 A KR1019890016352 A KR 1019890016352A KR 890016352 A KR890016352 A KR 890016352A KR 900008069 A KR900008069 A KR 900008069A
Authority
KR
South Korea
Prior art keywords
single crystal
silicon single
manufacturing equipment
crystal manufacturing
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
KR1019890016352A
Other languages
English (en)
Other versions
KR920009565B1 (ko
Inventor
히로시 가미오
요시노부 시마
Original Assignee
닛뽕 고오깡 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 닛뽕 고오깡 가부시기가이샤 filed Critical 닛뽕 고오깡 가부시기가이샤
Publication of KR900008069A publication Critical patent/KR900008069A/ko
Application granted granted Critical
Publication of KR920009565B1 publication Critical patent/KR920009565B1/ko
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Glass Melting And Manufacturing (AREA)
KR1019890016352A 1988-11-11 1989-11-11 실리콘 단결정의 제조장치 Expired KR920009565B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63284017A JPH0676274B2 (ja) 1988-11-11 1988-11-11 シリコン単結晶の製造装置
JP284017 1988-11-11

Publications (2)

Publication Number Publication Date
KR900008069A true KR900008069A (ko) 1990-06-02
KR920009565B1 KR920009565B1 (ko) 1992-10-19

Family

ID=17673220

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890016352A Expired KR920009565B1 (ko) 1988-11-11 1989-11-11 실리콘 단결정의 제조장치

Country Status (8)

Country Link
US (1) US5009863A (ko)
EP (1) EP0368586B1 (ko)
JP (1) JPH0676274B2 (ko)
KR (1) KR920009565B1 (ko)
CN (1) CN1019031B (ko)
DE (1) DE68913429D1 (ko)
FI (1) FI895158A7 (ko)
MY (1) MY104476A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190114506A (ko) * 2018-03-30 2019-10-10 엘에스산전 주식회사 Plc 시스템

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH035392A (ja) * 1989-05-30 1991-01-11 Nkk Corp シリコン単結晶の製造装置
US5139750A (en) * 1989-10-16 1992-08-18 Nkk Corporation Silicon single crystal manufacturing apparatus
US5312600A (en) * 1990-03-20 1994-05-17 Toshiba Ceramics Co. Silicon single crystal manufacturing apparatus
JPH0825836B2 (ja) * 1990-04-27 1996-03-13 東芝セラミックス株式会社 シリコン単結晶の製造装置
JP2670548B2 (ja) * 1990-04-27 1997-10-29 東芝セラミックス株式会社 シリコン単結晶の製造装置
US5314667A (en) * 1991-03-04 1994-05-24 Lim John C Method and apparatus for single crystal silicon production
JPH04317493A (ja) * 1991-04-15 1992-11-09 Nkk Corp シリコン単結晶の製造装置
DE4123336A1 (de) * 1991-07-15 1993-01-21 Leybold Ag Kristallziehverfahren und vorrichtung zu seiner durchfuehrung
US5363795A (en) * 1991-09-04 1994-11-15 Kawasaki Steel Corporation Czochralski crystal pulling process and an apparatus for carrying out the same
JPH0585879A (ja) * 1991-09-04 1993-04-06 Mitsubishi Materials Corp 単結晶引上装置
US5284631A (en) * 1992-01-03 1994-02-08 Nkk Corporation Crucible for manufacturing single crystals
JP2506525B2 (ja) * 1992-01-30 1996-06-12 信越半導体株式会社 シリコン単結晶の製造方法
JP3478406B2 (ja) * 1992-09-09 2003-12-15 アルベマール・コーポレーシヨン 粒状物質の供給装置
JP2807609B2 (ja) * 1993-01-28 1998-10-08 三菱マテリアルシリコン株式会社 単結晶の引上装置
JPH0859386A (ja) * 1994-08-22 1996-03-05 Mitsubishi Materials Corp 半導体単結晶育成装置
JP3769800B2 (ja) * 1996-01-12 2006-04-26 株式会社Ｓｕｍｃｏ 単結晶引上装置
JP3533416B2 (ja) * 1996-02-06 2004-05-31 三菱住友シリコン株式会社 単結晶引上装置
US5942032A (en) * 1997-08-01 1999-08-24 Memc Electronic Materials, Inc. Heat shield assembly and method of growing vacancy rich single crystal silicon
US7959732B1 (en) * 2005-06-17 2011-06-14 Saint-Gobain Ceramics & Plastics, Inc. Apparatus and method for monitoring and controlling crystal growth
US8262797B1 (en) * 2007-03-13 2012-09-11 Solaicx, Inc. Weir design providing optimal purge gas flow, melt control, and temperature stabilization for improved single crystal growth in a continuous Czochralski process
JP2015527295A (ja) * 2012-09-10 2015-09-17 ジーティーエイティー アイピー ホールディング エルエルシーＧｔａｔ Ｉｐ Ｈｏｌｄｉｎｇ Ｌｌｃ 連続チョクラルスキー法及び装置
US20140144371A1 (en) * 2012-11-29 2014-05-29 Solaicx, Inc. Heat Shield For Improved Continuous Czochralski Process
CN105887185A (zh) * 2016-05-30 2016-08-24 上海超硅半导体有限公司 一种多重提拉单晶硅的制造方法
CN111041551B (zh) * 2020-01-06 2021-02-05 北京北方华创真空技术有限公司 直拉硅单晶炉

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE962868C (de) * 1953-04-09 1957-04-25 Standard Elektrik Ag Tiegel zum Herstellen reinsten Halbleitermaterials, insbesondere von Silizium und dessen Verwendung
US2892739A (en) * 1954-10-01 1959-06-30 Honeywell Regulator Co Crystal growing procedure
US4015048A (en) * 1975-03-03 1977-03-29 Corning Glass Works Ceramic articles having cordierite coatings
US4010064A (en) * 1975-05-27 1977-03-01 International Business Machines Corporation Controlling the oxygen content of Czochralski process of silicon crystals by sandblasting silica vessel
US4042361A (en) * 1976-04-26 1977-08-16 Corning Glass Works Method of densifying metal oxides
US4200445A (en) * 1977-04-28 1980-04-29 Corning Glass Works Method of densifying metal oxides
US4238274A (en) * 1978-07-17 1980-12-09 Western Electric Company, Inc. Method for avoiding undesirable deposits in crystal growing operations
DE2928089C3 (de) * 1979-07-12 1982-03-04 Heraeus Quarzschmelze Gmbh, 6450 Hanau Verbundtiegel für halbleitertechnologische Zwecke und Verfahren zur Herstellung
US4911896A (en) * 1986-07-24 1990-03-27 General Electric Company Fused quartz member for use in semiconductor manufacture
JPS63177988A (ja) * 1987-01-20 1988-07-22 Toyo Seikan Kaisha Ltd レ−ザ−溶接缶製造方法
US4919901A (en) * 1987-12-31 1990-04-24 Westinghouse Electric Corp. Barrier design for crucibles for silicon dendritic web growth
JPH0280392A (ja) * 1988-09-16 1990-03-20 Osaka Titanium Co Ltd 単結晶製造装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190114506A (ko) * 2018-03-30 2019-10-10 엘에스산전 주식회사 Plc 시스템

Also Published As

Publication number Publication date
EP0368586B1 (en) 1994-03-02
JPH02133389A (ja) 1990-05-22
FI895158A7 (fi) 1990-05-12
CN1019031B (zh) 1992-11-11
US5009863A (en) 1991-04-23
DE68913429D1 (de) 1994-04-07
EP0368586A1 (en) 1990-05-16
MY104476A (en) 1994-04-30
CN1042954A (zh) 1990-06-13
JPH0676274B2 (ja) 1994-09-28
KR920009565B1 (ko) 1992-10-19
FI895158A0 (fi) 1989-10-31

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PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

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St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

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G160 Decision to publish patent application
PG1605 Publication of application before grant of patent

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E701 Decision to grant or registration of patent right
PE0701 Decision of registration

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GRNT Written decision to grant
PR0701 Registration of establishment

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PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

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Not in force date: 19951020

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