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KR830008406A - How to adjust the bandgap of amorphous alloys and devices - Google Patents

How to adjust the bandgap of amorphous alloys and devices Download PDF

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KR830008406A
KR830008406A KR1019810003328A KR810003328A KR830008406A KR 830008406 A KR830008406 A KR 830008406A KR 1019810003328 A KR1019810003328 A KR 1019810003328A KR 810003328 A KR810003328 A KR 810003328A KR 830008406 A KR830008406 A KR 830008406A
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오브신스키 스텐포드
아들러 데이브드
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오브신스키 스텐포드
에너지 컨버션 디바이시즈, 인코포레이티드
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Abstract

내용 없음No content

Description

무정형 합금 및 소자의 밴드갭을 조절하는 방법How to adjust the bandgap of amorphous alloys and devices

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제6도는 활성화 불소를 이미 피착된 비정형 합금에 확산시키기 위한 장치를 나타낸다.6 shows a device for diffusing activated fluorine into an already deposited amorphous alloy.

제7도는 본 발명의 공정에 의해 제조된 비정질 반도체 수광성합금의 한 실시예를 설명하기 위한 쇼트(shotkey)의 자벽형 태양전지의 구체적인 단면도이다.FIG. 7 is a specific cross-sectional view of a shot wall magnetic domain solar cell for explaining one embodiment of an amorphous semiconductor light-receiving alloy produced by the process of the present invention.

제8도는 본 발명의 공정에 의해 제조된 비정형 반도체합금을 포함하는 p-n 접합형 태양전지의 단면도이다.8 is a cross-sectional view of a p-n junction solar cell including an amorphous semiconductor alloy produced by the process of the present invention.

제9도는 본 발명의 공정에 의해 제조된 비정형 반도체합금을 포함하고 있는 광검출소자의 단면도이다.9 is a cross-sectional view of a photodetecting device including an amorphous semiconductor alloy manufactured by the process of the present invention.

제10도는 본 발명의 공정에 의해 제조된 비정형 반도체합금을 포함하는 전자사진용 드럼의 단면도이다.10 is a cross-sectional view of an electrophotographic drum including an amorphous semiconductor alloy produced by the process of the present invention.

제11도는 p-i-n 접합형 태양전지 소자의 단면도이다.11 is a cross-sectional view of a p-i-n junction solar cell device.

제12도는 n-i-p 접합형 태양전지 소자의 단면도이다.12 is a cross-sectional view of an n-i-p junction solar cell device.

제13도는 본 발명의 조정원소를 갖는 비정형 합금을 피착하기 위한 플라즈아 활성화 기상피착시스팀의 개략도이다.13 is a schematic diagram of a plasma activated vapor deposition system for depositing an amorphous alloy having a coordinating element of the present invention.

Claims (39)

개선된 광감성 비정형 합금을 제조하는 방법에 있어서 그 방법은 기판상에 적어도 실리콘을 포함하는 물질을 피착하는 공정과 전술한 물질에 적어도 불소와 같은 상태밀도를 감소시키는 원소를 포함시키는 공정으로 구성되며 공감성 파장함수의 특정한 영역을 가지며 조정된 밴드갭을 갖는 합금을 제조하기 위한 밴드갭내의 상태밀도를 실질적으로 증가시키지 않고 적오도 하나의 밴드갭 조정원소를 그 양을 조절하여 그 물질내로 첨가시키는 것을 특징으로 하는 개선된 광감성 비정형합금의 제조방법.In a method for producing an improved photosensitive amorphous alloy, the method comprises the steps of depositing a material containing at least silicon on a substrate and a step of including in the aforementioned material an element that reduces at least a density of states such as fluorine; By adjusting the amount of at least one bandgap adjustment element into the material without substantially increasing the density of states in the bandgap for producing an alloy having a specific region of the sympathetic wavelength function and having an adjusted bandgap. An improved method for producing a photosensitive amorphous alloy, characterized in that. 청구범위 제1항에 따르는 방법에 있어서 전술한 조정원소가 게르마늄 주석카본 혹은 질소로 구성되는 그룹중 하나인 것을 특징으로 하는 비정형합금의 제조방법.The method according to claim 1, wherein the aforementioned adjustment element is one of a group consisting of germanium tin carbon or nitrogen. 청구범위 제1항 또는 2항에 있어서 전술한 합금이 적어도 SiR4,H2및 GeH4로부터 글로우방전법에 의해 피착되는 것을 특징으로 하는 비정형합금의 제조방법.Method according to claim 1 or 2, wherein the alloy described above is deposited from at least SiR 4 , H 2 and GeH 4 by a glow discharge method. 청구범위 제1-3항중 하나에 따르는 방법에 있어서 전술한 혼합물이 1%까지의 GeH4를 호함하는 것을 특징으로 하는 비정형합금의 제조방법.A process according to one of claims 1-3, wherein said mixture contains up to 1% GeH 4 . 청구범위 제2항 드렸은 제4항에 따르는 방법에 있어서 전술한 SiR4및 H2의 혼합물이 4 : 1-10 : 1의 비율을 갖는 것을 특징으로 하는 비정형합금의 제조방법.Claim 2 The method according to claim 4, characterized in that the mixture of SiR 4 and H 2 described above has a ratio of 4: 1-10: 1. 청구범위 제1-5항중 하나에 따르는 방법에 있어서 전술한 합금이 농동광감성 영역으로서 피착되며 적어도 그 영역에 조정원소가 첨가됨을 특징으로 하는 비정형합금의 제조방법.The method according to one of claims 1-5, wherein the alloy described above is deposited as a non-sensitized photosensitive region, and an adjustment element is added to at least the region. 청구범위 제1-6항중 하나에 따르는 방법에 있어서 제2의 원소인 수소를 제2의 상태밀도 감소 원소로 첨가하는 것을 특징으로 하는 비정형합금의 제조방법.The method according to any one of claims 1 to 6, wherein hydrogen as a second element is added as a second state density reducing element. 청구범위 제7항에 따르는 방법에 있어서 전술한 상태 밀도 감소원소를, 실질적으로 동시에 밴드갭 조정원소를 갖는, 피착되는 합금에 결합시키는 것을 특징으로 하는 비정형합금의 제조방법.A method according to claim 7, wherein the above-mentioned state density reducing element is bonded to an alloy to be deposited having a bandgap adjusting element at substantially the same time. 청구범위 제1-8항중 하나에 따르는 방법에 있어서 전술한 감소원소를 피착후에 그 합금내로 결합시키는 것을 특징으로 하는 비정정형합금의 제조방법.A method according to one of claims 1-8, wherein the above-mentioned reducing element is bonded into the alloy after deposition. 청구범위 제1-9항중 하나에 따르는 방법에 있어서 전술한 제정원소를 실질적으로 불연속층인 합금내로 결합시키는 것을 특징으로 하는 비정형합금의 제조방법.A method according to one of claims 1-9, wherein the above-mentioned constituent elements are bonded into an alloy which is a substantially discontinuous layer. 청구범위 제1항-9항중 하나에 따르는 방법에 있어서 전술한 조정원소를 양을 변화하면서 합금내로 결합시키는 것을 특징으로 하는 비정형합금의 제조방법.A method according to any one of claims 1-9, wherein the above-mentioned adjustment element is combined into an alloy with varying amounts. 청구범위 제1항-제11항움직이 하나에 따르는 방법에 있어서 전술한 조정원소를 합금내로 결합시키기 전에 증발시키는 것을 특징으로 하는 비정형합금의 제조방법.Method according to claim 1 to claim 11, wherein the method for producing an amorphous alloy, characterized in that the evaporation of the above-described adjustment element before bonding into the alloy. 청구범위 제1항-12항중 하나에 따르는 방법에 있어서 전술한 합금내로 결합시키기 위해 플라즈마 활성조정원소를 생성시키는 것을 특징으로 하는 비정형합금의 제조방법.A method according to any one of claims 1-12, wherein a plasma active modulating element is produced for bonding into the alloy described above. 청구범위 제1항-13항중 하나에 따르는 방법에 있어서 전술한 활성화조종원소를 플라즈마-활성중착에 의해 활성화시키는 것을 특징으로 하는 비정형합금의 제조방법.A method according to any one of claims 1 to 13, wherein the above-mentioned activation co-operation element is activated by plasma-activated deposition. 청구범위 제1항-14항중 하나에 따르는 방법에 있어서 전술한 활성화 조정원소를 플라즈마-활성증착에 의해 활성화시키는 것을 특징으로 하는 비정형 합금의 제조방법.A method according to one of claims 1-14, wherein the above-mentioned activation modulator is activated by plasma-activated deposition. 청구범위 제1항-15항중 하나에 따르는 방법에 있어서 전술한 방법이 p 혹은 n형 도전형을 생성하기 위해 하나의 p 혹은 n불순물 원소를 갖는 합금의, 적오도 한 부분을 피착하는 것을 특징으로 하는 특징으로 하는 비정형합금의 제조방법.The method according to one of claims 1 to 15, characterized in that the above-mentioned method deposits at least a portion of an alloy having one p or n impurity element to produce a p or n type conductivity type. Method for producing an amorphous alloy, characterized in that. 청구범위 제1항-16항중의 공정중 하나에 따라 제조하는 비정형합금의 제조방법.A method for producing an amorphous alloy, which is prepared according to one of the processes of claims 1-16. 개선된 광감성 비정형합금에 있어서 그 합금을 실리콘을 포함함과 동시에, 적오도 불소와 같은 하나의 상태밀도 감소원소를 포함하고 있으며 실질적으로 갭내의 상태밀도를 증가시키지 않고 밴드갭내에 포함된 조정원소를 갖는 그 합금(118,146,148,150,168,170,172,176,180,186,188,194,206,208,210,214,216,218,220)과 그 합금이 광응답 파장함수의 특정한 영역을 가짐과 동시에 조정된 밴드갭을 갖는 것을 특징으로 하는 개선된 광감성 비정형합금.In the improved photosensitive amorphous alloy, the alloy contains silicon and at the same time contains one state density reducing element, such as fluorine fluoride, and an adjustment element contained in the band gap without substantially increasing the state density in the gap. And improved alloys 118, 146, 148, 150, 168, 170, 172, 176, 180, 186, 188, 194, 206, 208, 210, 214, 216, 218, 220, and the alloy having a specific region of the photoresponse wavelength function and having an adjusted band gap simultaneously. 청구범위 제18항에 따르는 합금에 있어서 전술한 조정원소가 게르마늄, 주석, 카본, 그리고 질소로 구성되는 그룹중 하나인 것을 특징으로 하는 합금.Alloy according to claim 18, characterized in that the aforementioned adjustment element is one of the group consisting of germanium, tin, carbon and nitrogen. 청구범위 제18항 혹은 제19항에 따르는 합금에 있어서 그합금(118,146,148,150,168,170,172,174,176,180,186,188,194,206,208,210,214,218,220)이 능동 광감성 영역(150,170,172,180,186,194,208,216)을 가지며 적어도 그 영역내에 조정원소가 포함하는 것을 특징으로 하는 합금.21. An alloy according to claim 18 or 19, wherein the alloys 118, 146, 148, 150, 168, 170, 172, 174, 176, 180, 186, 188, 194, 206, 208, 210, 214, 218, 220 have active photosensitive regions 150, 170, 172, 180, 186, 194, 208, 216 and at least within the region. 청구범위 제17-19항중 하나에 따르는 합금에 있어서 합금내에 전술한 제2의 상태밀도 감소원소인 수소를 포함하는 것을 특징으로 하느 합금.An alloy according to any one of claims 17-19, wherein the alloy comprises hydrogen in the alloy, the second state density reducing element described above. 청구범위 제17항-20항중 하나에 따르는 합금에 있어서 전술한 합금(118,146,148,150,168,170,172,174,176,180,186,188,194,206,208,210,214,216,218,220)이 글로우방전 피착법에 의해 피착됨을 특징으로 하는 합금.Alloy according to one of claims 17-20, characterized in that the aforementioned alloys (118,146,148,150,168,170,172,174,176,180,186,188,194,206,208,210,214,216,218,220) are deposited by glow discharge deposition. 청구범위 제17항-22항중 하나에 따르는 합금에 있어서 전술한 조정원소가 실질적으로 불연속인 충에 포함되는 것을 특징으로 하는 합금.Alloy according to one of claims 17 to 22, characterized in that the aforementioned adjustment elements are included in a substantially discontinuous charge. 청구범위 제17항-22항 중 하나에 따르는 합금에 있어서 전술한 조정원소를 양을 변화하여 첨가시키는 것을 특징으로 하는 합금.The alloy according to any one of claims 17 to 22, wherein the alloying element is added in varying amounts. 청구범위 제17항-24항중 하나에 따르는 합금에 있어서 적어도 n(148,170,176,218,220)혹은 p(172,174,194,210,214)도전성 영역과 n혹은 p형 불순물원소를 함유하는 하부분을 포함하는 것을 특징으로 하는 합금An alloy according to any one of claims 17-24, characterized in that it comprises a lower portion containing at least n (148, 170, 176, 218, 220) or p (172, 174, 194, 210, 214) conductive regions and n or p-type impurity elements. .. 개선다니 광감응성소자에 있어서 그 소자는 조사에 의해 전하캐리어가 생성될 수 있을 정도의 밴드갭을 갖는 능동광감성영역과 그러한 영역을 갖는 비정형 반도체 합금체를 포함하는 여러재료의 중첩된 층과 불소와 같은 적어도 하나의 상태밀도 감소원소를 포함하는 비정형합금으로 구성되며 광응답파 장함수의 특정항영역을 나타내도록 조정할 합금의 밴드갭과 실질적으로 밴드갭내의 상태수를 증가시키지 않고 복사광흡수를 증가시키기 위해 적어도 광감성 영역(150,170,172,180,186,194,208,216)내에 적당량의 밴드갭 조정원소가 포함되는 합금(118,146,148,150,168,170,172,176,180,186,188,194,206,208,210,214,216,218,220)을 특징으로 하는 개선된 강감응성 소자.In improved photosensitive devices, the device comprises fluorine and an overlapping layer of various materials including an active photosensitive region having a bandgap such that charge carriers can be generated by irradiation and an amorphous semiconductor alloy having such a region. It is composed of an amorphous alloy containing at least one element of density reduction, such as, and the bandgap of the alloy to be adjusted to represent the specific term region of the optical response wave function and the radiation absorption without substantially increasing the number of states in the An improved sensitizing element characterized by an alloy (118, 146, 148, 150, 168, 170, 172, 176, 180, 186, 188, 194, 206, 208, 210, 214, 216, 218, 220) containing an appropriate amount of bandgap adjustment elements in at least the photosensitive region (150, 170, 172, 180, 186, 194, 208, 216) to increase. 청구범위 제25항에 따르는 소자에 있어서 광감성영역(150,170,172,180,186,194,208,216)의 밴드갭이 1.6eV이하인 것을 특징으로 하는 소자.Device according to claim 25, characterized in that the bandgap of the photosensitive region (150, 170, 172, 180, 186, 194, 208, 216) is 1.6 eV or less. 청구범위 제25항 또는 제26항에 따르는 소자에 있어서 조정원소가 게르마늄, 주석, 카본, 혹은 질소로 구성되는 그룹중 하나인 것을 특징으로 하는 소자.A device according to claim 25 or 26, wherein the adjustment element is one of a group consisting of germanium, tin, carbon, or nitrogen. 청구범위 제25항-27항중 하나에 따르는 소자에 있어서 제2의 상태밀도 감소원소인 수소원소를 그내에 포함하는 것을 특징으로 하는 소자.A device according to one of claims 25-27, comprising a hydrogen element which is a second state density reducing element therein. 청구범위 제25항-28항중 하나에 따르는 소자에 있어서 전술한 합금(118,146,150,168,170,172,174,176,180,186,188,194,206,208,210,214,216,218,220)이 글로구방전 피착법에 의해 피착됨을 특징으로 하는 소자.Device according to one of claims 25-28, characterized in that the aforementioned alloys (118,146,150,168,170,172,174,176,180,186,188,194,206,208,210,214,216,218,220) are deposited by a globule discharge deposition method. 청구범위 제25항-29항중 하나에 따르는 소자에 있어서 전술한 합금체(118,146,148,150,168,170,172,174,176,180,186,188,194,206,208,210,214,216,218,220)가 실질적으로 불연속인 층내에 있는 조정원소를 포함하는 것을 특징으로 하는 소자.Device according to one of claims 25-29, characterized in that the alloys 118, 146, 148, 150, 168, 170, 172, 174, 176, 180, 186, 188, 194, 206, 208, 210, 214, 216, 218, 220 comprise control elements in a substantially discontinuous layer. 청구범위 제25항-30항중 하나에 따르는 소자에 있어서, 합금체(118,146,148,150,168,170,172,174,176,180,186,188,194,206,208,210,214,216,218,220)가 전술한 적당량의 조정원소를 포함하는 것을 특징으로 하는 소자.Device according to one of claims 25-30, wherein the alloy body (118,146,148,150,168,170,172,174,176,180,186,188,194,206,208,210,214,216,218,220) comprises the appropriate amount of adjustment elements described above. 청구범위 제25항-31항중 하나에 따르는 소자에 있어서 전술한 합금체(118,146,148,150,168,170,172,174,176,180,186,188,194,206,208,210,214,216,218,220)가 적어도 하나의 n(148,170,176,206,218,220)혹은 p(172,174,194,210,214)도전성 영역과 n혹은 p불순물 원소를 함유하는 영역을 포함하는 것을 특징으로 하는 소자.In the device according to any one of claims 25-31, the alloys 118, 146, 148, 150, 168, 170, 172, 174, 176, 180, 186, 188, 194, 206, 208, 210, 214, 216, 218, 220 or p (172, 174, 194, 210, 214) or an impurity-containing region containing p (172, 174, 194, 210, 214) or an impurity region containing an element containing an impurity region. A device characterized by the above-mentioned. 청구범위 제25항-32항중 하나에 따르는 소자에 있어서 전술한 합금체(118,146,160,168,170,172,174,176,180,186,188,194,206,208,210,214,216,218,220)가 소트키 배리어형 태양전지(142)의 일부로 형성됨을 특징으로 하는 소자.Device according to one of claims 25-32, characterized in that the aforementioned alloys (118,146,160,168,170,172,174,176,180,186,188,194,206,208,210,214,216,218,220) are formed as part of a sortie barrier solar cell (142). 청구범위 제25항-32항중 하나에 따르는 소자에 있어서 전술한 합금체(118,146,148,150,168,170,172,174,176,180,186,188,194,206,208,210,214,216,218,220)가 MIS형 태양전지(142)의 일부로 형성됨을 특징으로 하는 소자.Device according to one of claims 25-32, characterized in that the aforementioned alloys (118,146,148,150,168,170,172,174,176,180,186,188,194,206,208,210,214,216,218,220) are formed as part of a MIS solar cell (142). 청구범위 제25항-32항움직이 하나에 따르는 소자에 있어서 전술한 합금체(118,146,148,150,168,170,172,174,176,180,186,188,194,206,208,210,214,216,218,220)가 p-n접합소자(168)의 일부로 형성됨을 특징으로 하는 소자.A device according to claims 25-32, wherein the alloys described above (118,146,148,150,168,170,172,174,176,180,186,188,194,206,208,210,214,216,218,220) are formed as part of a p-n junction element (168). 청구범위 제25항-제35항중 하나에 따르는 소자에 있어서 전술한 합금체(118,146,148,150,168,170,172,174,176,180,186,188,194,206,208,210,214,216,218,220)가 p-i-n형 소자(198,212)의 일부로 형성됨을 특징으로 하는 소자.Device according to one of claims 25 to 35, characterized in that the aforementioned alloys (118,146,148,150,168,170,172,174,176,180,186,188,194,206,208,210,214,216,218,220) are formed as part of a p-i-n type device (198,212). 청구범위 제25항-36항중 하나에 따르는 소자에 있어서 전술한 합금체(118,146,148,150,168,170,172,174,176,180,186,188,194,206,208,210,214,216,218,220)가 광검출소자(178)의 일부로 형성됨을 특징으로 하는 소자.Device according to one of claims 25-36, characterized in that the aforementioned alloys (118,146,148,150,168,170,172,174,176,180,186,188,194,206,208,210,214,216,218,220) are formed as part of the photodetector element (178). 청구범위 제25항-37항중 하나에 따르는 소자에 있어서 전술한 합금체(118,146,148,150,168,170,172,174,176,180,186,188,194,206,208,210,214,218,216,220)가 정전체상생성 발생소자의 일부로 형성됨을 특징으로 하는 소자.Device according to one of claims 25-37, characterized in that the aforementioned alloys (118,146,148,150,168,170,172,174,176,180,186,188,194,206,208,210,214,218,216,220) are formed as part of an electrostatic generation generating element. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019810003328A 1980-09-09 1981-09-07 Method for producting amorphous alloys Expired KR890000478B1 (en)

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