KR20190006443A - Resin composition - Google Patents

Abstract

Provided is a resin composition which has a low coefficient of thermal expansion, can restrict bending, obtains a hardened object with a high contact force even though being repeatedly heated and cooled, and further, has excellent compression molding properties. According to the present invention the resin composition comprises: (A) epoxy resin having viscosity less than 20 Pa·s at 45°C and an alkene frame in a molecule; (B) an inorganic charging material; and (C) a hardening agent.

Description

Resin composition {RESIN COMPOSITION}

The present invention relates to a resin composition. The present invention also relates to a resin sheet, a circuit board, and a semiconductor chip package using the resin composition.

2. Description of the Related Art In recent years, there has been an increasing demand for small-sized, high-performance electronic devices such as smart phones and tablet-type devices, and accordingly, an insulating layer for semiconductor chip packages used in these small electronic devices is required to be further enhanced. It is known that such an insulating layer is formed, for example, by curing a resin composition (see, for example, Patent Documents 1 and 2).

Patent Document 1: JP-A-2014-55233 Patent Document 2: International Publication No. 2014/157446

The insulating layer is required to have low dielectric loss tangent in order to reduce electrical signal loss. As a result, the present inventors have found that an insulating layer having a low dielectric tangent can be obtained by using a resin composition containing an epoxy resin having an alkene skeleton in a molecule. However, as the present inventors further proceeded to investigate, it has been found that the resin composition containing an epoxy resin having an alkene skeleton in a molecule has low compression moldability. When a resin composition layer is to be formed by a compression molding method, it is difficult to fill the resin composition to every corner in a resin composition having low compression moldability.

In addition, in recent years, there is a demand for a smaller semiconductor chip package, and therefore it is required to further reduce the thickness of the insulating layer used for the semiconductor chip package. Therefore, development of an insulating layer which is low in coefficient of linear thermal expansion (CTE) (sometimes referred to as thermal expansion coefficient) and capable of suppressing warpage is desired. The insulating layer is required to have high adhesiveness even after repeated heating and cooling. For example, the insulating layer in close contact with the silicon chip is required to be hard to peel off from the silicon chip even if heating and cooling are repeated. However, satisfactory performance has not been achieved in the evaluation of the coefficient of linear thermal expansion, warpage and adhesion of a conventional resin composition containing an epoxy resin having an alkene skeleton in a molecule.

It is also conceivable to use the resin composition used for forming the insulating layer as a sealing material of a semiconductor chip package. For example, as a sealing layer for sealing a semiconductor chip in a semiconductor chip package, a cured product obtained by curing the resin composition may be used. The above-described problems are also the same when the resin composition is used as a sealing material for a semiconductor chip package.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and it is an object of the present invention to provide a cured product having a low coefficient of linear thermal expansion, capable of suppressing warpage and capable of achieving high adhesiveness even after repeated heating and cooling, A resin composition; A resin sheet having a resin composition layer containing the above resin composition; A circuit board including an insulating layer formed by a cured product of the resin composition; And a semiconductor chip package including a cured product of the resin composition described above; And to provide the above-mentioned objects.

(A) an epoxy resin having a viscosity in a predetermined range at 45 ° C and having an alkene skeleton in the molecule, (B) an inorganic filler, and (C) an epoxy resin having an alkene skeleton in the molecule, The present invention has been accomplished based on the discovery that the above problems can be solved by a resin composition comprising a combination of a curing agent and a curing agent.

That is, the present invention includes the following.

(1) An epoxy resin composition comprising (A) an epoxy resin having a viscosity of 20 Pa · s or less at 45 ° C and having an alkene skeleton in the molecule,

(B) an inorganic filler, and

(C) a curing agent.

[2] The resin composition according to [1], wherein the component (A) has a polybutadiene structure in the molecule.

[3] The resin composition according to [1] or [2], wherein the component (A) has a viscosity of 15 Pa · s or less at 45 ° C.

[4] The resin composition according to any one of [1] to [3], wherein the content of the component (A) is 0.2% by mass to 10% by mass with respect to 100% by mass of the nonvolatile component of the resin composition.

[5] The resin composition according to any one of [1] to [4], wherein the component (B) has an average particle diameter of 0.1 μm to 10 μm.

[6] The resin composition according to any one of [1] to [5], wherein the component (C) is an acid anhydride-based curing agent or a phenol-based curing agent.

[7] The resin composition according to any one of [1] to [6], further comprising an epoxy resin (D) other than the component (A)

[8] The resin composition according to any one of [1] to [7], further comprising a curing accelerator (E).

[9] The resin composition according to any one of [1] to [8], which is a resin composition for semiconductor encapsulation or an insulating layer.

[10] The resin composition according to any one of [1] to [9], which is a liquid resin composition.

[11] A resin sheet having a support and a resin composition layer comprising the resin composition according to any one of [1] to [10] provided on the support.

[12] A circuit board comprising an insulating layer formed by a cured product of the resin composition according to any one of [1] to [10].

[13] A semiconductor chip package, comprising: the circuit board according to [12]; and a semiconductor chip mounted on the circuit board.

[14] A semiconductor chip package comprising a semiconductor chip and a cured product of the resin composition according to any one of [1] to [10], which seals the semiconductor chip.

According to the present invention, there is provided a resin composition which can obtain a cured product having a low coefficient of linear thermal expansion, capable of suppressing warpage, capable of obtaining high adhesiveness even after repeated heating and cooling, and having excellent compression moldability; A resin sheet having a resin composition layer containing the above resin composition; A circuit board including an insulating layer formed by a cured product of the resin composition; And a semiconductor chip package including a cured product of the resin composition described above; Can be provided.

1 is a cross-sectional view schematically showing a fan-out type WLP as an example of a semiconductor chip package according to a second embodiment of the present invention.

Hereinafter, the present invention will be described in detail with reference to embodiments and examples. It should be noted, however, that the present invention is not limited to the following embodiments and examples, and can be arbitrarily changed without departing from the scope of the claims of the present invention and its equivalent scope.

In the following description, the "resin component" of the resin composition means a component other than the inorganic filler among the nonvolatile components contained in the resin composition.

[One. Outline of resin composition]

The resin composition of the present invention comprises (A) an epoxy resin having a viscosity in a predetermined range at 45 DEG C and having an alkene skeleton in the molecule, (B) an inorganic filler, and (C) a curing agent. In the following description, the "epoxy resin having a viscosity in a predetermined range at 45 ° C. and having an alkene skeleton in the molecule" as the component (A) is sometimes referred to as "(A) epoxy resin".

By including the above components (A), (B) and (C) in combination, the resin composition is excellent in compression moldability, low in coefficient of linear thermal expansion, It is possible to obtain a desired effect of the present invention that a cured product capable of exhibiting high adhesiveness can be obtained even after repeated use. The cured product of the resin composition can be preferably used as an insulating layer and a sealing material of a semiconductor chip package, taking advantage of its excellent characteristics.

The resin composition may further contain optional components in combination with the component (A), the component (B) and the component (C). Examples of optional components include (A) an epoxy resin (D) other than the epoxy resin, (E) a curing accelerator, and the like.

[2. (A) epoxy]

(A) The epoxy resin has a viscosity in a predetermined range at 45 캜. The specific viscosity of the epoxy resin (A) at 45 캜 is usually 20 Pa · s or less, preferably 15 Pa · s or less, more preferably 10 Pa · s or less, and particularly preferably 6.0 Pa · s or less. By using the epoxy resin (A) having such a viscosity, the compression moldability of the resin composition can be improved. By using the epoxy resin (A) having such a viscosity, a cured product having a low coefficient of linear thermal expansion, capable of suppressing warpage, and capable of exhibiting high adhesiveness even after repeated heating and cooling can be obtained. The lower limit of the viscosity of the epoxy resin (A) at 45 캜 is not particularly limited, but may be, for example, 1 Pa · s or more, 2 Pa · s or more, 3 Pa · s or more, and the like.

The viscosity of the epoxy resin (A) can be measured by the measuring method described in the examples.

The epoxy resin (A) has an alkene skeleton in the molecule. Here, the alkene skeleton represents a structure represented by the following formula (1). There is no limitation on the atom to which the bonding number of the carbon atom shown in the formula (1) is bonded (bond), but usually it is a hydrogen atom or a carbon atom. By using the epoxy resin (A) having an alkene skeleton in this way, the dielectric tangent of the cured product of the resin composition can be generally lowered. Further, in general, it is possible to improve the insulating property of the cured product or lower the hygroscopicity.

(1)

The epoxy resin (A) may have an alkene skeleton in the main chain of the molecule, an alkene skeleton in the side chain of the molecule, or an alkene skeleton in both the main chain and the side chain of the molecule. Among them, it is preferable to have an alkene skeleton in the side chain of the molecule, from the viewpoint of obtaining the desired effect of the present invention remarkably and from the viewpoint of effectively lowering the dielectric tangent of the cured product.

The epoxy resin (A) having an alkene skeleton usually contains a structural unit having an alkene skeleton in its molecule. The structural unit is preferably a divalent hydrocarbon group having an alkene skeleton and more preferably a divalent aliphatic hydrocarbon group having an alkene skeleton from the viewpoints of obtaining a desired effect of the present invention remarkably and effectively lowering the dielectric tangent of the cured product And a bivalent chain aliphatic hydrocarbon group having an alkene skeleton is particularly preferable.

The number of carbon atoms in the above structural unit having an alkene skeleton is preferably 2 or more, more preferably 3 or more, and still more preferably 3 or more, from the viewpoint of achieving the desired effect of the present invention and effectively lowering the dielectric loss tangent of the cured product. Particularly preferably 4 or more, preferably 10 or less, more preferably 8 or less, particularly preferably 6 or less.

Particularly, from the viewpoints of obtaining the desired effect of the present invention to a significant extent and effectively lowering the dielectric loss tangent of the cured product, it is preferable that the structural unit having an alkene skeleton includes an alkenyl group. The number of carbon atoms of the alkenyl group is usually 2 or more, preferably 6 or less, more preferably 4 or less, from the viewpoint of achieving the desired effect of the present invention and effectively lowering the dielectric tangent of the cured product. Particularly preferably 3 or less. Examples of such an alkenyl group include a vinyl group, a 1-propenyl group, and a 2-propenyl group.

Preferable examples of the above-mentioned structural unit having an alkene skeleton include a structural unit represented by the following formula (2) or (3). The structural unit represented by the formula (2) and the structural unit represented by the formula (3) can all be formed by polymerization of butadiene. Specifically, the structural unit represented by the formula (2) is a structural unit that can be formed by 1,2-addition polymerization of butadiene. The structural unit represented by the formula (3) is a structural unit that can be formed by 1,4-addition polymerization of butadiene. Among them, a structural unit represented by the formula (2) is preferable from the viewpoint of obtaining a desired effect of the present invention remarkably and from the viewpoint of effectively lowering the dielectric tangent of the cured product.

(2)

(3)

The number of the structural units having an alkene skeleton contained in the molecule of the epoxy resin (A) may be one, or may be two or more. From the viewpoint of obtaining a desired effect of the present invention remarkably and from the viewpoint of effectively lowering the dielectric loss tangent of the cured product, the epoxy resin (A) is a resin composition containing two or more of the structural units having an alkene skeleton .

In particular, the epoxy resin (A) preferably has a polybutadiene structure in the molecule, from the viewpoint of obtaining a desired effect of the present invention remarkably and from the viewpoint of effectively lowering the dielectric loss tangent of the cured product. The polybutadiene structure refers to a structure that can be formed by polymerizing butadiene. Specific examples of the polybutadiene structure include a structure containing two or more structural units selected from a structural unit represented by the formula (2) and a structural unit represented by the formula (3) in one molecule. Among them, the epoxy resin (A) preferably contains two or more structural units represented by the formula (2) in one molecule.

The number of the structural units represented by the formula (2) per one molecule of the epoxy resin (A) is preferably larger than the number of the structural units represented by the formula (3). As a result, the desired effect of the present invention can be remarkably obtained, and in particular, the compression moldability of the resin composition can be effectively increased, and the adhesion of the cured product when heating and cooling are repeated can be effectively increased.

The epoxy resin (A) usually has an epoxy group. The epoxy resin (A) may have an epoxy group in the main chain of the molecule, may have an epoxy group in the side chain of the molecule, or may have an epoxy group in both the main chain and the side chain of the molecule. Among them, it is preferable to have an epoxy group in the side chain of the molecule, from the viewpoint of obtaining a desired effect of the present invention remarkably and from the viewpoint of effectively lowering the dielectric tangent of the cured product.

The epoxy resin (A) may have an epoxy group in the above-mentioned structural unit having an alkene skeleton. However, from the viewpoint of obtaining a desired effect of the present invention remarkably and from the viewpoint of effectively lowering the dielectric tangent of the cured product, Having an epoxy group in a structural unit different from the structural unit of the structural unit

The number of carbon atoms of the above structural unit having an epoxy group is preferably 2 or more, more preferably 3 or more, particularly preferably 3 or more, in view of obtaining a desired effect of the present invention remarkably and effectively lowering dielectric tangent of the cured product Preferably 4 or more, preferably 10 or less, more preferably 8 or less, particularly preferably 6 or less.

Preferable examples of the structural unit having an epoxy skeleton include structural units represented by the following general formula (4) or (5). The structural unit represented by the formula (4) can be formed, for example, by epoxidizing a polybutadiene containing the structural unit represented by the formula (2). The structural unit represented by the formula (5) can be formed, for example, by epoxidizing a polybutadiene containing a structural unit represented by the formula (3). Among them, the structural unit represented by the formula (4) is preferable from the viewpoint of obtaining the desired effect of the present invention and from the viewpoint of effectively lowering the dielectric tangent of the cured product.

(4)

(5)

The number of the structural units represented by the formula (4) per one molecule of the epoxy resin (A) is preferably larger than the number of the structural units represented by the formula (5). As a result, the desired effect of the present invention can be remarkably obtained, and in particular, the compression moldability of the resin composition can be effectively increased, and the adhesion of the cured product when heating and cooling are repeated can be effectively increased.

The epoxy resin (A) preferably has two or more epoxy groups in the molecule from the viewpoint of achieving the desired effect of the present invention. The epoxy resin (A) is preferably an aliphatic epoxy resin containing no aromatic ring in the molecule from the viewpoint of achieving the desired effect of the present invention.

(A) Examples of the molecular structure of the epoxy resin include, for example, those represented by the formula (6). In the formula (6), m and n each independently represent a natural number.

(6)

As specific examples of the epoxy resin (A), JP400 manufactured by Nippon Soda Co., Ltd., having a molecular structure represented by the above formula (6) can be mentioned. The component (A) may be used alone, or two or more components may be used in combination at an arbitrary ratio.

Generally, the epoxy resin is a mixture of a liquid epoxy resin (hereinafter sometimes referred to as " liquid epoxy resin ") at a temperature of 20 캜 and an epoxy resin in solid form at a temperature of 20 캜 .). The epoxy resin (A) may be a solid epoxy resin, but it is preferably a liquid epoxy resin. (A) Since the epoxy resin is a liquid epoxy resin, the compression moldability of the resin composition can be effectively increased, and the adhesion of the cured product when heating and cooling are repeated can be effectively increased.

The number average molecular weight (Mn) of the epoxy resin (A) is preferably 2500 or more, more preferably 3000 or more, particularly preferably 3200 or more, preferably 5500 or less, more preferably 5000 or less, Is less than 4000. (A) the number average molecular weight (Mn) of the epoxy resin is not less than the lower limit of the above range, the compression moldability of the resin composition is particularly improved, or the coefficient of linear thermal expansion of the cured product of the resin composition is effectively lowered, It is possible to effectively increase the ability or to effectively suppress the peeling of the cured product by heating and cooling. The number average molecular weight (Mn) of the epoxy resin (A) is not more than the upper limit of the above range, whereby the compressibility of the resin composition can be improved particularly, the coefficient of linear thermal expansion of the cured product can be effectively lowered, It is possible to increase the toughness of the cured product and effectively suppress the occurrence of cracks.

The weight average molecular weight (Mw) of the epoxy resin (A) is preferably 5,000 to 60,000, more preferably 6,000 to 50,000, and still more preferably 7,000 to 20,000 from the viewpoint of achieving the desired effect of the present invention.

The number-average molecular weight (Mn) and the weight-average molecular weight (Mw) of the resin can be measured as a value in terms of polystyrene by a gel permeation chromatography (GPC) method. For example, the number-average molecular weight (Mn) and the weight-average molecular weight (Mw) of the resin were measured using LC-9A / RID-6A manufactured by Shimadzu Corporation, Shodex K- K-804L / K-804L as a mobile phase, chloroform at a column temperature of 40 占 폚, and using a calibration curve of standard polystyrene.

The epoxy equivalent of the epoxy resin (A) is preferably 50 to 5000, more preferably 50 to 3000, still more preferably 80 to 2000, still more preferably 110 to 1000. When the epoxy equivalent of the epoxy resin (A) is in the above range, the cross-linking density of the cured product of the resin composition becomes high, and an insulating layer with small surface roughness can be obtained. The epoxy equivalent is the mass of the resin containing one equivalent of epoxy group. The epoxy equivalent can be measured according to JIS K7236.

The glass transition temperature of the epoxy resin (A) is preferably -20 占 폚 or lower, more preferably -30 占 폚 or lower, particularly preferably -40 占 폚 or lower, preferably -90 占 폚 or higher, -80 占 폚 or higher, particularly preferably -70 占 폚 or higher. (A) The epoxy resin has a glass transition temperature within the above range, whereby the desired effect of the present invention can be obtained remarkably.

The amount of the epoxy resin (A) in the resin composition is preferably 0.2% by mass or more, more preferably 0.3% by mass or more, and most preferably 0.3% by mass or less, relative to 100% by mass of the nonvolatile component in the resin composition from the viewpoint of achieving the desired effect of the present invention. , Particularly preferably not less than 0.4 mass%, preferably not more than 10 mass%, more preferably not more than 9.5 mass%, particularly preferably not more than 9 mass%. In addition, the dielectric tangent of the cured product of the resin composition can be lowered by putting the amount of the epoxy resin (A) in the above range.

[3. (B) inorganic filler]

The resin composition contains an inorganic filler as the component (B). By using the inorganic filler (B), the coefficient of linear thermal expansion of the cured product of the resin composition can be reduced, and warping can be suppressed.

As the material of the inorganic filler (B), an inorganic compound is used. Examples of the material of the inorganic filler (B) include inorganic fillers such as silica, alumina, glass, cordierite, silicon oxide, barium sulfate, barium carbonate, talc, clay, mica powder, zinc oxide, hydrotalcite, Aluminum oxide, aluminum oxide, magnesium hydroxide, magnesium carbonate, magnesium oxide, boron nitride, aluminum nitride, manganese nitride, aluminum borate, strontium carbonate, strontium titanate, calcium titanate, magnesium titanate, bismuth titanate, titanium oxide, zirconium oxide, Barium titanate zirconate, barium zirconate, calcium zirconate, zirconium phosphate, and zirconium tungstate phosphate. Of these, silica is particularly suitable from the viewpoint of achieving a desired effect of the present invention. As the silica, for example, amorphous silica, fused silica, crystalline silica, synthetic silica, hollow silica and the like can be given. As the silica, spherical silica is preferable. The inorganic filler (B) may be used singly or in combination of two or more in an arbitrary ratio.

Usually, the inorganic filler (B) is contained in the resin composition in the form of particles. The average particle diameter of the inorganic filler (B) is preferably 0.1 占 퐉 or more, more preferably 0.5 占 퐉 or more, particularly preferably 1.0 占 퐉 or more, preferably 10 占 퐉 or less, more preferably 8.0 占 퐉 or less, And particularly preferably 5.0 m or less. When the average particle diameter of the inorganic filler (B) is in the above range, the desired effect of the present invention can be remarkably obtained. Particularly, when the average particle diameter of the inorganic filler (B) is not more than the upper limit of the above range, the compression moldability of the resin composition can be effectively increased, and flow marks can be reduced. Further, the adhesion of the cured product when heating and cooling are repeated can be effectively increased. When the average particle diameter of the inorganic filler (B) is in the above range, it is possible to lower the surface roughness of the insulating layer in general when the insulating layer is formed of the cured product of the resin composition.

(B) The average particle diameter of particles such as inorganic filler can be measured by a laser diffraction / scattering method based on the Mie scattering theory. Specifically, the particle size distribution of the particles can be prepared on the basis of volume by a laser diffraction scattering type particle diameter distribution measuring apparatus, and the average particle diameter as a median diameter can be measured from the particle diameter distribution. The measurement sample can be preferably those in which particles are dispersed in a solvent such as water by ultrasonic waves. As the laser diffraction scattering type particle diameter distribution measuring device, "LA-500" manufactured by Horiba Seisakusho Co., Ltd. and the like can be used.

Examples of the inorganic filler (B) as described above include "MSS-6", "AC-5V" manufactured by Tatsumori Corporation; &Quot; SP60-05 ", " SP507-05 " manufactured by Shinnitetsu Sumikin Materials Company; "YC100C", "YA050C", "YA050C-MJE" and "YA010C" manufactured by Adomatex Corporation; UFP-30 "," SFP-130MC "," FB-7SDC "," FB-5SDC "," FB-3SDC "manufactured by Denka Corporation; "Silphyl NSS-3N", "Silphil NSS-4N" and "Silpil NSS-5N" manufactured by Tokuyama Corporation; SC2500SQ "," SO-C4 "," SO-C2 "," SO-C1 ", and" FE9 "manufactured by Adomex Corporation.

The inorganic filler (B) is preferably surface-treated with an appropriate surface-treating agent. By the surface treatment, the moisture resistance and dispersibility of the inorganic filler (B) can be improved. Examples of the surface treatment agent include a fluorine-containing silane coupling agent, an aminosilane coupling agent, an epoxy silane coupling agent, a mercapto coupling agent, a silane coupling agent, an alkoxysilane compound, an organosilazane compound, LINGER, and the like.

Examples of the commercially available surface treatment agent include "KBM22" (dimethyldimethoxysilane) manufactured by Shinetsu Kagaku Co., "KBM403" (3-glycidoxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., (3-aminopropyltriethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd., KBM573 (N-methacryloxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., 3-aminopropyltrimethoxysilane), "KBM5783" (N-phenyl-3-aminooxytitrimethoxysilane) manufactured by Shinetsu Kagaku Co., "SZ-31" KBM103 " (phenyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd., and KBM-4803 (long-chain epoxy type silane coupling agent) manufactured by Shin-Etsu Chemical Co., Among them, a nitrogen atom-containing silane coupling agent is preferable, an amino silane coupling agent containing a phenyl group is more preferable, N-phenyl-3-aminoalkyltrimethoxysilane is more preferable, and N-phenyl- Aminopropyltrimethoxysilane and N-phenyl-3-aminooctyltrimethoxysilane are more preferable. The surface treatment agent may be used singly or in combination of two or more in an arbitrary ratio.

The degree of surface treatment by the surface treatment agent can be evaluated by the amount of carbon per unit surface area of inorganic filler (B). The amount of carbon per unit surface area of the inorganic filler (B) is preferably at least 0.02 mg / m 2, more preferably at least 0.1 mg / m 2 from the viewpoint of improving the dispersibility of the inorganic filler (B) 0.2 mg / m 2 or more. On the other hand, the amount of carbon is preferably 1 mg / m 2 or less, more preferably 0.8 mg / m 2 or less from the viewpoint of suppressing the melt viscosity of the resin composition and the increase of the melt viscosity in the sheet form, And not more than 0.5 mg / m 2.

(B) the amount of carbon per unit surface area of the inorganic filler (B) can be determined by a cleaning treatment with a solvent (for example, methyl ethyl ketone (hereinafter may be abbreviated as "MEK" After that, it can be measured. Specifically, a sufficient amount of methyl ethyl ketone and inorganic filler (B) surface-treated with a surface treatment agent are mixed and ultrasonically cleaned at 25 占 폚 for 5 minutes. Thereafter, the supernatant is removed and the solid content is dried, and then the amount of carbon per unit surface area of inorganic filler (B) can be measured using a carbon analyzer. As the carbon analyzer, "EMIA-320V" manufactured by Horiba Seisakusho Co., Ltd. can be used.

The amount of the inorganic filler (B) in the resin composition is preferably 60 mass% or more, more preferably 65 mass% or more, further preferably 70 mass% or more, relative to 100 mass% of the nonvolatile component in the resin composition, The content is preferably 95 mass% or less, more preferably 90 mass% or less, further preferably 86 mass% or less. When the amount of the inorganic filler (B) is in the above range, the desired effect of the present invention can be obtained remarkably, and the coefficient of linear thermal expansion of the resin composition can be effectively lowered.

[4. (C) Curing agent]

The resin composition contains, as a component (C), a curing agent. The curing agent (C) generally has a function of reacting with an epoxy resin such as (A) an epoxy resin and (D) an epoxy resin to cure the resin composition. The curing agent (C) may be used alone, or two or more types may be used in combination at an arbitrary ratio.

As the curing agent (C), a compound capable of reacting with the epoxy resin to cure the resin composition can be used. For example, an acid anhydride curing agent, a phenol curing agent, an active ester curing agent, a cyanate ester curing agent, A photo-curing agent, a carbodiimide-based curing agent, and the like. Among them, an acid anhydride-based curing agent and a phenol-based curing agent are preferable from the viewpoint of obtaining the effect of the present invention remarkably.

Examples of the acid anhydride-based curing agent include a curing agent having at least one acid anhydride group in one molecule. Specific examples of the acid anhydride-based curing agent include phthalic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylnadic anhydride, hydrogenated methylnadic anhydride, trialkyltetrahydrophthalic anhydride , Dodecenylsuccinic anhydride, 5- (2,5-dioxotetrahydro-3-furanyl) -3-methylcyclohexene-1,2-dicarboxylic anhydride, anhydrous trimellitic acid, pyromellitic anhydride , Benzophenone tetracarboxylic acid dianhydride, biphenyltetracarboxylic acid dianhydride, naphthalene tetracarboxylic acid dianhydride, oxydiphthalic acid dianhydride, 3,3'-4,4'-diphenylsulfone tetracarboxylic acid dianhydride, 1,3,3a , 4,5,9b-hexahydro-5- (tetrahydro-2,5-dioxo-3-furanyl) -naphtho [ Anhydrotrimellitate), styrenes copolymerized with styrene and maleic acid And polymeric acid anhydrides such as a phenol-maleic acid resin and a phenol-maleic acid resin.

As the phenol-based curing agent, a curing agent having one or more, preferably two or more, of hydroxyl groups bonded to aromatic rings (benzene ring, naphthalene ring and the like) in one molecule can be given. Among them, a compound having a hydroxyl group bonded to a benzene ring is preferable. From the viewpoint of heat resistance and water resistance, a phenolic curing agent having a novolak structure is preferred. From the viewpoint of adhesion, a nitrogen-containing phenol-based curing agent is preferable, and a phenazine-based curing agent containing a triazine skeleton is more preferable. Particularly, from the viewpoint of highly satisfying the heat resistance, the water resistance, and the adhesiveness, the triazine skeleton-containing phenol novolac curing agent is preferable.

Specific examples of the phenol-based curing agent and naphthol-based curing agent include MEH-7700, MEH-7810, MEH-7851 and MEH-8000H manufactured by Meiwa Kasei; NHN ", " CBN ", " GPH ", manufactured by Nippon Kayaku Co., "SN-170", "SN-180", "SN-190", "SN-475", "SN-485", "SN- SN-375 ", " SN-395 "; TD-2090 "," TD-2090-60M "," LA-7052 "," LA-7054 "," LA-1356 "," LA-3018 "," LA-3018-50P " EXB-9500 "," HPC-9500 "," KA-1160 "," KA-1163 "," KA-1165 "; GDP-6115L ", " GDP-6115H ", and " ELPC75 "

Examples of the active ester-based curing agent include a curing agent having at least one active ester group in one molecule. Among them, examples of the active ester curing agent include esters having two or more ester groups having high reactivity, such as phenol esters, thiophenol esters, N-hydroxyamine esters, and esters of heterocyclic hydroxy compounds Compounds are preferred. The active ester-based curing agent is preferably obtained by a condensation reaction of a carboxylic acid compound and / or a thiocarboxylic acid compound with a hydroxy compound and / or a thiol compound. Particularly, from the viewpoint of improving heat resistance, an active ester type curing agent obtained from a carboxylic acid compound and a hydroxy compound is preferable, and an active ester type curing agent obtained from a carboxylic acid compound and a phenol compound and / or a naphthol compound is more preferable.

Examples of the carboxylic acid compound include benzoic acid, acetic acid, succinic acid, maleic acid, itaconic acid, phthalic acid, isophthalic acid, terephthalic acid and pyromellitic acid.

Examples of the phenol compound or naphthol compound include hydroquinone, resorcin, bisphenol A, bisphenol F, bisphenol S, phenolphthalein, methylated bisphenol A, methylated bisphenol F, methylated bisphenol S, phenol, o- Cresol, catechol, alpha -naphthol, beta -naphthol, 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 2,6-dihydroxynaphthalene, dihydroxybenzophenone, Trihydroxybenzophenone, tetrahydroxybenzophenone, fluoroglucine, benzene triol, dicyclopentadiene type diphenol compounds, phenol novolak, and the like. Here, the "dicyclopentadiene type diphenol compound" refers to a diphenol compound obtained by condensing two molecules of phenol in one dicyclopentadiene molecule.

Specific preferred examples of the active ester-based curing agent include active ester compounds containing a dicyclopentadiene type diphenol structure, active ester compounds containing a naphthalene structure, active ester compounds containing an acetylated phenol novolac, And an active ester compound including a benzoylate. Of these, active ester compounds containing a naphthalene structure and active ester compounds containing a dicyclopentadiene type diphenol structure are more preferable. The "dicyclopentadiene type diphenol structure" represents a divalent structure composed of phenylene-dicyclopentylene-phenylene.

EXB9451 "," EXB9460 "," EXB9460S "," HPC-8000 "," HPC-8000H "," HPC-8000H ", and" HPC-8000H "as active ester compounds containing a dicyclopentadiene type diphenol structure as commercial products of active ester- -8000-65T "," HPC-8000H-65TM "," EXB-8000L "," EXB-8000L-65TM "and" EXB-8150-65T "(manufactured by DIC); EXB9416-70BK " (manufactured by DIC) as an active ester compound containing a naphthalene structure; &Quot; DC808 " (manufactured by Mitsubishi Kagaku Co., Ltd.) as an active ester compound containing an acetyl compound of phenol novolak; &Quot; YLH1026 " (manufactured by Mitsubishi Kagaku Co., Ltd.) as the active ester compound containing benzoylated phenol novolak; DC808 " (manufactured by Mitsubishi Kagaku Co., Ltd.) as an active ester-based curing agent which is an acetylated product of phenol novolak; YLH1026 " (manufactured by Mitsubishi Kagaku), " YLH1030 " (manufactured by Mitsubishi Kagaku), and YLH1048 (manufactured by Mitsubishi Kagaku) as benzoylates of phenol novolak; And the like.

Examples of the cyanate ester curing agent include bisphenol A dicyanate, polyphenol cyanate, oligo (3-methylene-1,5-phenylene cyanate), 4,4'-methylene bis (2,6- Bis (4-cyanate) phenylpropane, 1,1-bis (4-cyanurate), 4,4'-ethylidenediphenyl dicyanate, hexafluorobisphenol A dicyanate, 2,2- Bis (4-cyanate phenyl-1- (methyl ethylidene)) benzene, bis (4-cyanate-3,5-dimethylphenyl) methane, Phenyl) thioether, and bis (4-cyanate phenyl) ether; Polyfunctional cyanate resins derived from phenol novolak and cresol novolak; A prepolymer obtained by partially trierizing these cyanate resins; And the like. Specific examples of the cyanate ester curing agent include " PT30 " and " PT60 " (both phenol novolac type polyfunctional cyanate ester resins) manufactured by Lone Japan Co., Ltd.; ULL-950S " (polyfunctional cyanate ester resin); &Quot; BA230 ", " BA230S75 " (a prepolymer in which part or all of the bisphenol A dicyanet is triazine to form a trimer); And the like.

Specific examples of the benzoxazine-based curing agent include "HFB2006M" manufactured by Showa Kobunshi Co., Ltd., "P-d" manufactured by Shikoku Kasei Corporation, and "F-a".

Specific examples of the carbodiimide-based curing agent include "V-03" and "V-07" manufactured by Nisshinbo Chemical Co.,

The content of the component (C) is preferably 1% by mass or more, more preferably 5% by mass or more, and still more preferably 5% by mass or more, relative to 100% by mass of the resin component in the resin composition, from the viewpoint of achieving the desired effect of the present invention Is not less than 10% by mass, preferably not more than 70% by mass, more preferably not more than 65% by mass, further preferably not more than 60% by mass.

When the number of epoxy groups in the epoxy resin containing the epoxy resin (A) and the epoxy resin (D) is 1, the number of active groups in the curing agent (C) is preferably 0.1 or more, more preferably 0.2 or more, Is not less than 0.3, preferably not more than 2, more preferably not more than 1.8, further preferably not more than 1.6, particularly preferably not more than 1.4. Here, the " epoxy group number of epoxy resin " is a total value obtained by dividing the mass of the nonvolatile component of the epoxy resin present in the resin composition by the epoxy equivalent. The term "the number of active groups of the (C) curing agent" is a value obtained by summing the values obtained by dividing the mass of the non-volatile component of the (C) curing agent present in the resin composition by the active group equivalent. When the number of active groups of the curing agent (C) in the case where the epoxy group number of the epoxy resin is 1, the desired effect of the present invention can be obtained remarkably and the heat resistance of the cured product of the resin composition layer is further improved .

[5. (D) any epoxy resin]

The resin composition may contain (D) an epoxy resin other than the above-mentioned (A) epoxy resin as an optional component.

Examples of the epoxy resin (D) include epoxy resins such as biquilene type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, bisphenol AF type epoxy resin, dicyclopentadiene type epoxy resin, Phenol type epoxy resin, naphthol novolak type epoxy resin, phenol novolak type epoxy resin, tertiary-butyl-catechol type epoxy resin, naphthalene type epoxy resin, naphthol type epoxy resin, anthracene type epoxy resin, glycidylamine type epoxy A cresol novolak type epoxy resin, a biphenyl type epoxy resin, a linear aliphatic epoxy resin, an epoxy resin having a butadiene structure, an alicyclic epoxy resin, a heterocyclic epoxy resin, a spirocyclic epoxy resin , Cyclohexane type epoxy resin, cyclohexane dimethanol type epoxy resin, naphthylene ether type epoxy resin , There may be mentioned trimethyl olhyeong epoxy resin, tetraphenyl ethane epoxy resin and the like. The epoxy resin may be used singly or in combination of two or more kinds.

The resin composition preferably contains, as the epoxy resin (D), an epoxy resin having two or more epoxy groups in one molecule. From the viewpoint of obtaining the desired effect of the present invention, the ratio of the epoxy resin having two or more epoxy groups in one molecule to (D) 100% by mass of the nonvolatile component of the epoxy resin is preferably 50% It is preferably at least 60 mass%, particularly preferably at least 70 mass%.

(D) As the epoxy resin, a liquid epoxy resin may be used, a solid epoxy resin may be used, or a liquid epoxy resin and a solid epoxy resin may be used in combination. Among them, from the viewpoint of improving the compression moldability of the resin composition, it is preferable to use (D) a liquid epoxy as the epoxy resin.

As the liquid epoxy resin, a liquid epoxy resin having two or more epoxy groups per molecule is preferable.

Examples of the liquid epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol AF type epoxy resin, naphthalene type epoxy resin, glycidyl ester type epoxy resin, glycidylamine type epoxy resin, phenol novolak type epoxy resin , An alicyclic epoxy resin having an ester skeleton, a cyclohexane-type epoxy resin, a cyclohexane dimethanol-type epoxy resin, an aliphatic epoxy resin, and an epoxy resin having a butadiene structure are preferable, and bisphenol A type epoxy resin, glycidylamine type An epoxy resin and an aliphatic epoxy resin are more preferable.

Specific examples of the liquid epoxy resin include " HP4032 ", " HP4032D ", " HP4032SS " (naphthalene type epoxy resin) manufactured by DIC Corporation; "EXA-850CRP" (bisphenol A type epoxy resin) manufactured by DIC Corporation; "828US", "jER828EL", "825", "Epikote 828EL" (bisphenol A type epoxy resin) manufactured by Mitsubishi Kagaku; &Quot; jER807 ", " 1750 " (bisphenol F type epoxy resin) manufactured by Mitsubishi Chemical Corporation; &Quot; jER152 " (phenol novolak type epoxy resin) manufactured by Mitsubishi Chemical Corporation; 630 ", " 630LSD " (glycidylamine type epoxy resin) manufactured by Mitsubishi Chemical Corporation; &Quot; YED-216D " (aliphatic epoxy resin) manufactured by Mitsubishi Chemical Corporation; ZX1059 " (a mixture of a bisphenol A type epoxy resin and a bisphenol F type epoxy resin) manufactured by Shinnitetsu Sumikin Kagaku Co., Ltd.; ZX1658 " and " ZX1658GS " (liquid 1,4-glycidyl cyclohexane type epoxy resin) manufactured by Shinnitetsu Sumikin Kagaku Co., Ltd.; EX-721 " (glycidyl ester type epoxy resin) manufactured by Nagase ChemteX Corporation; &Quot; Celloxide 2021P " (an alicyclic epoxy resin having an ester skeleton) manufactured by Daicel Company; &Quot; PB-3600 " (epoxy resin having a butadiene structure) manufactured by Daicel Company; &Quot; EP-3980S " (glycidylamine type epoxy resin) manufactured by ADEKA Corporation; ELM-100H " (glycidylamine type epoxy resin) manufactured by Tsumito Tomokagaku; And the like. These may be used singly or in combination of two or more.

As the solid epoxy resin, a solid epoxy resin having three or more epoxy groups in one molecule is preferable, and an aromatic solid epoxy resin having three or more epoxy groups in one molecule is more preferable.

Examples of the solid epoxy resin include epoxy resins such as bicalcylenol type epoxy resins, naphthalene type epoxy resins, naphthalene type tetrafunctional epoxy resins, cresol novolak type epoxy resins, dicyclopentadiene type epoxy resins, trisphenol type epoxy resins, naphthol type epoxy resins, Epoxy resins such as phenylene type epoxy resin, naphthylene ether type epoxy resin, anthracene type epoxy resin, bisphenol A type epoxy resin, bisphenol AF type epoxy resin and tetraphenyl ethane type epoxy resin are preferable, and biscylenol type epoxy resin, Bisphenol AF type epoxy resin, and naphthylene ether type epoxy resin are more preferable.

Specific examples of the solid epoxy resin include " HP4032H " (naphthalene type epoxy resin) manufactured by DIC Corporation; HP-4700 ", " HP-4710 " (naphthalene type tetrafunctional epoxy resin) manufactured by DIC Corporation; "N-690" (cresol novolak type epoxy resin) manufactured by DIC Corporation; "N-695" (cresol novolak type epoxy resin) manufactured by DIC Corporation; HP-7200 " (dicyclopentadiene type epoxy resin) manufactured by DIC Corporation; EXA-7311-G4 "," EXA-7311-G4S ", and" HP6000 "(manufactured by DIC Corporation," HP-7200HH "," HP-7200H "," EXA-7311 " Naphthylene ether type epoxy resin); "EPPN-502H" (trisphenol type epoxy resin) manufactured by Nippon Kayaku Co., Ltd.; NC7000L " (naphthol novolak type epoxy resin) manufactured by Nippon Kayaku Co., Ltd.; Quot; NC3000H ", " NC3000 ", " NC3000L ", and " NC3100 " (biphenyl type epoxy resin) manufactured by Nippon Kayaku Co., Ltd.; "ESN475V" (naphthalene type epoxy resin) manufactured by Shinnitetsu Sumikin Kagaku Co., Ltd.; "ESN485" (naphthol novolak type epoxy resin) manufactured by Shinnitetsu Sumikin Kagaku Co., Ltd.; YX4000H ", " YX4000 ", and " YL6121 " manufactured by Mitsubishi Chemical Corporation (biphenyl type epoxy resin); &Quot; YX4000HK " (biquileneol type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "YX8800" (anthracene type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "PG-100" and "CG-500" manufactured by Osaka Gas Chemical Co., Ltd.; &Quot; YL7760 " (Bisphenol AF type epoxy resin) manufactured by Mitsubishi Chemical Corporation; &Quot; YL7800 " (fluorene type epoxy resin) manufactured by Mitsubishi Chemical Corporation; &Quot; jER1010 " (solid bisphenol A type epoxy resin) manufactured by Mitsubishi Chemical Corporation; And " jER1031S " (tetraphenyl ethane type epoxy resin) manufactured by Mitsubishi Chemical Corporation. These may be used singly or in combination of two or more.

When the liquid epoxy resin and the solid epoxy resin as the epoxy resin (D) are used in combination, their ratio (liquid epoxy: solid epoxy resin) is preferably 1: 0.1 to 1:15, Is 1: 0.3 to 1:10, particularly preferably 1: 0.6 to 1: 8. When the ratio of the liquid epoxy resin and the solid epoxy resin falls within this range, usually, when used in the form of a resin sheet, a suitable tackiness is obtained. In general, when used in the form of a resin sheet, sufficient flexibility is obtained and handling properties are improved. Usually, a cured product having sufficient breaking strength can be obtained.

The weight average molecular weight of the epoxy resin (D) is preferably 100 to 5000, more preferably 250 to 3000, and still more preferably 400 to 1500, from the viewpoint of achieving the desired effect of the present invention.

The epoxy equivalent of the epoxy resin (D) preferably falls within the same range as described for the epoxy equivalent (A) of the epoxy resin.

When the resin composition contains the epoxy resin (D), the amount of the epoxy resin (D) is preferably 100 parts by mass or more, more preferably 200 parts by mass or more, particularly preferably 100 parts by mass or more, relative to 100 parts by mass of the epoxy resin (A) Preferably 500 parts by mass or more, preferably 1000 parts by mass or less, more preferably 900 parts by mass or less, particularly preferably 800 parts by mass or less. By bringing the amount of the epoxy resin (D) into the above range, the desired effect of the present invention can be remarkably obtained.

When the resin composition contains (D) an epoxy resin, the amount of the epoxy resin (D) is preferably 0.3% by mass or more, more preferably 0.5% by mass or more, , More preferably not less than 0.7 mass%, further preferably not more than 20 mass%, more preferably not more than 16 mass%, further preferably not more than 14 mass%. By setting the amount of the epoxy resin (D) within the above range, the mechanical strength and insulation reliability of the cured product of the resin composition can be enhanced.

[6. (E) Curing accelerator]

The resin composition may contain (E) a curing accelerator as an optional component. By using a curing accelerator, curing can be promoted when the resin composition is cured.

Examples of the (E) curing accelerator include phosphorus hardening accelerators, amine hardening accelerators, imidazole hardening accelerators, guanidine hardening accelerators and metal hardening accelerators. Among them, a phosphorus hardening accelerator, an amine hardening accelerator, an imidazole hardening accelerator and a metal hardening accelerator are preferable, and an amine hardening accelerator, an imidazole hardening accelerator and a metal hardening accelerator are more preferable. The curing accelerator may be used singly or in combination of two or more kinds.

Examples of phosphorus hardening accelerators include triphenylphosphine, phosphonium borate compounds, tetraphenylphosphonium tetraphenylborate, n-butylphosphonium tetraphenylborate, tetrabutylphosphonium decanoate, (4-methylphenyl) triphenyl Phosphonium thiocyanate, tetraphenylphosphonium thiocyanate, butyltriphenylphosphonium thiocyanate, and the like. Among them, triphenylphosphine and tetrabutylphosphonium decanoate are preferable.

Examples of the amine-based curing accelerator include trialkylamines such as triethylamine and tributylamine; amines such as 4-dimethylaminopyridine, benzyldimethylamine, 2,4,6-tris (dimethylaminomethyl) 8-diazabicyclo (5,4,0) -undecene and the like. Among them, 4-dimethylaminopyridine and 1,8-diazabicyclo (5,4,0) -undecene are preferable.

Examples of the imidazole-based curing accelerator include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, Imidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, Methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1- , 1-cyanoethyl-2-undecylimidazolium trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6- [ (1 ')] - ethyl-s-triazine, 2,4-diamino-6- [2'-undecylimidazolyl- -Diamino-6- [2'-ethyl-4'-methylimidazolyl- (1 ')] - ethyl-s-triazine, 2,4- diamino-6- [ - (1 ')] - ethyl-s-triazine isocyanuric acid adduct, 2-phenylimidazole isocyanuric acid 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,3-dihydro-1H-pyrrolo [1,2 -a] benzimidazole, 1-dodecyl-2-methyl-3-benzylimidazolium chloride, 2-methylimidazoline and 2-phenylimidazoline, and imidazole compounds such as imidazole compounds and epoxy resins Among them, 2-ethyl-4-methylimidazole and 1-benzyl-2-phenylimidazole are preferable.

As the imidazole-based curing accelerator, commercially available products may be used, and for example, "P200-H50" manufactured by Mitsubishi Chemical Corporation; &Quot; 2E4MZ " manufactured by Shikoku Kasei Co., Ltd.; And the like.

Examples of the guanidine curing accelerator include dicyandiamide, 1-methylguanidine, 1-ethylguanidine, 1-cyclohexylguanidine, 1-phenylguanidine, 1- (o-tolyl) guanidine, dimethylguanidine, , Trimethylguanidine, tetramethylguanidine, pentamethylguanidine, 1,5,7-triazabicyclo [4.4.0] deca-5-ene, 7-methyl-1,5,7-triazabicyclo [ 1-n-butylbiguanide, 1-n-octadecylbiguanide, 1,1-dimethylbiguanide, 1, Cyclohexylbiguanide, 1-allylbiguanide, 1-phenylbiguanide, 1- (o-tolyl) biguanide, and the like. Among them, dicyandiamide and 1,5,7-triazabicyclo [4.4.0] deca-5-ene are preferable.

Examples of the metal-based curing accelerator include organic metal complexes or organic metal salts of metals such as cobalt, copper, zinc, iron, nickel, manganese and tin. Specific examples of the organometallic complexes include organic cobalt complexes such as cobalt (II) acetylacetonate and cobalt (III) acetylacetonate, organic copper complexes such as copper (II) acetylacetonate, and zinc (II) acetylacetonate An organic iron complex such as an organic zinc complex and iron (III) acetylacetonate, an organic nickel complex such as nickel (II) acetylacetonate, and an organic manganese complex such as manganese (II) acetylacetonate. Examples of the organic metal salt include zinc octylate, tin octylate, zinc naphthenate, cobalt naphthenate, tin stearate and zinc stearate.

When the resin composition contains the curing accelerator (E), the amount of the curing accelerator (E) is preferably 0.01% by mass to 3% by mass relative to 100% by mass of the resin component of the resin composition from the viewpoint of achieving the desired effect of the present invention. By mass, more preferably 0.03% by mass to 1.5% by mass, still more preferably 0.05% by mass to 1% by mass.

[7. (F) Optional additives]

The resin composition may further contain optional additives in addition to the above-described components as optional components. Such additives include, for example, organic fillers; Organic metal compounds such as organic copper compounds, organic zinc compounds and organic cobalt compounds; Thermoplastic resin; Thickener; Defoamer; Leveling agents; An adhesion imparting agent; coloring agent; Flame retardant; And the like. These additives may be used singly or in combination of two or more in an arbitrary ratio.

The above-mentioned resin composition may contain a solvent, if necessary, but it is preferably a resin composition of a solvent-free solvent-free composition. Even when such a solvent is not included, the above resin composition containing (A) an epoxy resin can be fluidized when molded using a compression molding method, and excellent compression moldability can be realized. Therefore, this resin composition can be used as a resin composition for a no-solvent.

[8. Method of producing resin composition]

The resin composition can be produced, for example, by stirring the compounding ingredients using a stirring device such as a rotary mixer.

[9. Characteristics of Resin Composition]

The above-mentioned resin composition is excellent in compression moldability. Therefore, when the resin composition layer is formed on the circuit board or the semiconductor chip by the compression molding method, it is possible to fill the resin composition to every corner. Therefore, by curing the resin composition layer, an insulating layer having excellent insulation reliability and a sealing layer having excellent sealing reliability can be obtained.

For example, the resin composition described above is compression molded on a 12-inch silicon wafer using a compression mold apparatus (mold temperature: 130 占 폚, mold pressure: 6 MPa, cure time: 10 minutes) Layer. In this case, usually, the resin composition can be filled up to the end of the wafer while suppressing the occurrence of cracks.

Further, according to the above-mentioned resin composition, a cured product having a low coefficient of linear thermal expansion can be obtained. Therefore, by using this resin composition, an insulating layer and a sealing layer having a low coefficient of linear thermal expansion can be obtained.

For example, a cured product for evaluation is prepared by the method described in the examples using the resin composition described above, and the coefficient of linear thermal expansion of the cured product for evaluation is measured. In this case, the coefficient of linear thermal expansion obtained is usually 10 ppm / ° C or less, preferably 9 ppm / ° C or less, and more preferably 8 ppm / ° C or less. There is no specific limitation on the lower limit, and it is usually 0 ppm / ° C, preferably 1 ppm / ° C or more.

Further, according to the resin composition described above, a layer of a cured product capable of suppressing warpage can be obtained. Therefore, by using this resin composition, it is possible to obtain an insulating layer and a sealing layer capable of suppressing the warpage of the circuit board and the semiconductor chip package.

For example, a cured product layer of a resin composition is formed on a 12-inch silicon wafer by the method described in the examples using the resin composition described above to prepare a sample substrate. In this case, when the sample substrate is heated and cooled in the order of 35 占 폚, 260 占 폚 and 35 占 폚, the deflection amount measured by the method described in the embodiment can be made usually less than 2 mm.

Further, according to the resin composition described above, a cured product capable of exhibiting high adhesiveness can be obtained even if heating and cooling are repeated. Therefore, by using this resin composition, it is possible to obtain an insulating layer or a sealing layer which is less prone to peeling due to temperature change.

For example, a resin wafer comprising a cured layer of a resin composition and a silicon chip embedded in the cured layer is produced by the method described in the examples. When a thermal cycle test is conducted on this resin wafer by the method described in the embodiment, it is generally possible to suppress the occurrence of delamination at the interface between the silicon chip and the cured layer.

The inventor of the present invention assumes a structure in which the above-described excellent advantages can be obtained by the resin composition of the present invention. However, the technical scope of the present invention is not limited by the structure described below.

The above-mentioned resin composition contains (A) an epoxy resin having a low viscosity, and thus has excellent fluidity at the time of compression molding. Therefore, the resin composition can easily enter into a small gap, so that excellent compression moldability is achieved.

In addition, the inorganic filler (B) contained in the resin composition has a smaller degree of expansion and shrinkage due to the temperature change than the resin component. Further, (A) the epoxy resin can function as a flexible firing component after curing of the resin composition, so that the volume change due to the temperature change can be absorbed. Therefore, the coefficient of linear thermal expansion of the cured product of the resin composition can be lowered.

Further, as described above, the inorganic filler (B) has a small degree of expansion and contraction due to temperature change, so that even when the temperature changes, the stress caused by the temperature change can be reduced. Further, (A) the epoxy resin can function as a flexible calcination component after curing of the resin composition, so that even if stress is generated in the cured product, the epoxy resin can absorb the stress (A). Therefore, it is possible to suppress the generation of stress that may cause the warp, and therefore it is possible to suppress the warp.

Further, since the resin composition has excellent fluidity as described above, the residual stress after molding of the resin composition is difficult to remain. Further, even if stress is generated by the temperature change, the epoxy resin (A) can absorb the stress as described above. Therefore, in the cured product of the resin composition, stress concentration is suppressed. Therefore, even if heating and cooling are repeated, the cured product of the resin composition is hardly broken due to the temperature change, so that the occurrence of delamination due to resin breakage can be suppressed.

Usually, the cured product of the resin composition has a low dielectric tangent. Therefore, by using this resin composition, an insulating layer with low dielectric tangent can be obtained.

For example, a cured layer of the resin composition is prepared by the method described in the examples. The dielectric loss tangent of this cured layer measured by the measuring method described in the examples is preferably 0.007 or less, more preferably 0.006 or less. The lower limit of the value of the dielectric loss tangent is preferably as low as possible, for example, 0.001 or more.

The above-mentioned resin composition may be a liquid phase or a solid phase, but it is preferably a liquid phase at the time of molding. For example, the resin composition in a liquid state at room temperature (for example, 20 占 폚) may be molded by compression molding at room temperature without performing any particular temperature adjustment, Molding may be performed. The resin composition in a solid state at room temperature can be formed into a liquid phase by adjusting its temperature to a higher temperature (for example, 130 DEG C). Therefore, molding by compression molding can be performed by appropriate temperature adjustment such as heating Do. The resin composition may be in a liquid state at an appropriate temperature without containing a solvent, and can be used, for example, as a liquid encapsulant.

[10. Use of Resin Composition]

By utilizing the above-mentioned advantages, the sealing layer and the insulating layer can be formed by the cured product of the resin composition. Therefore, this resin composition can be used as a resin composition for sealing a semiconductor or an insulating layer.

For example, the above-mentioned resin composition is a resin composition for forming an insulating layer of a semiconductor chip package (a resin composition for an insulating layer of a semiconductor chip package) and an insulating layer of a circuit board (including a printed wiring board) (A resin composition for an insulating layer of a circuit board) for forming a circuit board. Further, for example, the above-mentioned resin composition is a resin composition for forming the insulating layer for forming a conductor layer (including a rewiring layer) formed on the insulating layer (forming an insulating layer for forming a conductor layer For example, a resin composition for use in the present invention.

Further, for example, the above resin composition can be suitably used as a resin composition (a resin composition for sealing a semiconductor chip) for sealing a semiconductor chip.

Examples of the semiconductor chip package to which the sealing layer or the insulating layer formed of the cured product of the resin composition can be applied include FC-CSP, MIS-BGA package, ETS-BGA package, Package type, a fan-in type WLP, a fan-out type PLP (Panel Lavel Package), and a fan-type PLP.

The resin composition may be used as an underfill material and may be used, for example, as a material for MUF (Molding Under Filling) used after a semiconductor chip is connected to a substrate.

The above-mentioned resin composition can be used in a wide variety of applications in which a resin composition such as a sheet-like laminate material such as a resin sheet or a prepreg, a solder resist, a die bonding material, a hole filling resin,

[11. Resin sheet]

The resin sheet of the present invention has a support and a resin composition layer provided on the support. The resin composition layer is a layer containing the resin composition of the present invention and is usually formed of a resin composition.

The thickness of the resin composition layer is preferably 200 μm or less, more preferably 150 μm or less, further preferably 100 μm or less, 80 μm or less, 60 μm or less, 50 μm or less, or 40 μm or less, Mu m or less. The lower limit of the thickness of the resin composition layer is not particularly limited and may be, for example, 1 占 퐉 or more, 5 占 퐉 or more, 10 占 퐉 or more and the like.

As the support, for example, a film made of a plastic material, a metal foil and a release paper can be mentioned, and a film metal foil made of a plastic material is preferable.

When a film made of a plastic material is used as the support, examples of the plastic material include polyethylene terephthalate (hereinafter sometimes abbreviated as "PET"), polyethylene naphthalate (hereinafter sometimes abbreviated as "PEN" .); Polycarbonate (hereinafter sometimes abbreviated as " PC "); Acrylic polymers such as polymethyl methacrylate (hereinafter sometimes abbreviated as " PMMA "); Cyclic polyolefin; Triacetylcellulose (hereinafter sometimes abbreviated as " TAC "); Polyether sulfide (hereinafter sometimes abbreviated as " PES "); Polyether ketones; Polyimide; And the like. Among them, polyethylene terephthalate and polyethylene naphthalate are preferable, and inexpensive polyethylene terephthalate is particularly preferable.

When a metal foil is used as a support, examples of the metal foil include copper foil and aluminum foil. Among them, copper foil is preferable. As the copper foil, a foil made of a single metal of copper may be used, or a foil made of an alloy of copper and another metal (for example, tin, chromium, silver, magnesium, nickel, zirconium, silicon, May be used.

The support may be subjected to a mat treatment, a corona treatment, and an antistatic treatment on the surface to be bonded to the resin composition layer.

As the support, a support having a release layer having a release layer on the surface to be bonded to the resin composition layer may be used. As the release agent used for the release layer of the release layer-adhered support, for example, one or more release agents selected from the group consisting of an alkyd resin, a polyolefin resin, a urethane resin, and a silicone resin can be mentioned. Examples of commercially available products of the release agent include "SK-1", "AL-5", and "AL-7" manufactured by Lin Tec Corporation, which are alkyd resin type mold release agents. As the release layer-adhered support, for example, " Lumirror T60 " manufactured by Toray Industries, Inc.; "Purex" manufactured by Teijin Co., Ltd.; And " Unipyl " manufactured by Uni-Chika Corporation.

The thickness of the support is preferably in the range of 5 탆 to 75 탆, more preferably in the range of 10 탆 to 60 탆. When the release layer-adhered support is used, it is preferable that the thickness of the entirety of the release layer-adhered support is in the above range.

The resin sheet can be produced, for example, by coating the resin composition on a support using a coating device such as a die coater. If necessary, the resin composition may be dissolved in an organic solvent to prepare a resin varnish, and the resin varnish may be applied to produce a resin sheet. By using a solvent, the viscosity can be adjusted to improve the coating property. When a resin varnish is used, usually, the resin varnish is dried after application to form a resin composition layer.

Examples of the organic solvent include ketone solvents such as acetone, methyl ethyl ketone and cyclohexanone; Acetic acid ester solvents such as ethyl acetate, butyl acetate, cellosolve acetate, propylene glycol monomethyl ether acetate and carbitol acetate; Carbitol solvents such as cellosolve and butyl carbitol; Aromatic hydrocarbon solvents such as toluene and xylene; Amide solvents such as dimethylformamide, dimethylacetamide (DMAc) and N-methylpyrrolidone; And the like. The organic solvent may be used alone, or two or more kinds may be used in combination at an arbitrary ratio.

The drying may be carried out by a known method such as heating or hot air jetting. The drying conditions are such that the content of the organic solvent in the resin composition layer is usually 10 mass% or less, preferably 5 mass% or less. For example, 30 to 60 mass% of the organic solvent is used, the resin varnish is dried at 50 to 150 DEG C for 3 minutes to 10 minutes, whereby the resin composition Layer can be formed.

The resin sheet may optionally include a layer other than the support and the resin composition layer. For example, in a resin sheet, a protective film according to a support may be provided on the surface of the resin composition layer not bonded to the support (that is, the surface opposite to the support). The thickness of the protective film is, for example, 1 占 퐉 to 40 占 퐉. By the protective film, it is possible to prevent adhesion or scratch of dust or the like to the surface of the resin composition layer. When the resin sheet has a protective film, the resin sheet can be used by peeling off the protective film. Further, the resin sheet can be rolled and stored.

The resin sheet can be suitably used for forming an insulating layer in the production of a semiconductor chip package (a resin sheet for insulation of a semiconductor chip package). For example, the resin sheet can be used for forming an insulating layer of a circuit board (a resin sheet for an insulating layer of a circuit board). Examples of packages using such a substrate include FC-CSP, MIS-BGA package, and ETS-BGA package.

In addition, the resin sheet can be suitably used for sealing a semiconductor chip (a resin sheet for sealing a semiconductor chip). Examples of applicable semiconductor chip packages include a fan-out type WLP, a fan-type WLP, a fan-out type PLP, a fan-type PLP, and the like.

Further, the resin sheet may be used for the material of the MUF used after the semiconductor chip is connected to the substrate.

In addition, resin sheets can be used in a wide variety of applications where high insulation reliability is required. For example, the resin sheet can be suitably used for forming an insulating layer of a circuit board such as a printed wiring board.

[12. Circuit board]

The circuit board of the present invention includes an insulating layer formed by a cured product of the resin composition of the present invention. This circuit board can be manufactured, for example, by a manufacturing method including the following steps (1) and (2).

(1) A step of forming a resin composition layer on a substrate.

(2) A step of thermally curing the resin composition layer to form an insulating layer.

In the step (1), a substrate is prepared. Examples of the substrate include substrates such as a glass epoxy substrate, a metal substrate (such as stainless steel and cold rolled steel sheet (SPCC)), a polyester substrate, a polyimide substrate, a BT resin substrate and a thermosetting polyphenylene ether substrate have. The substrate may have a metal layer such as a copper foil on its surface as a part of the substrate. For example, a base material having a first metal layer and a second metal layer which are peelable on both surfaces thereof may be used. When such a substrate is used, a conductor layer as a wiring layer that can function as a circuit wiring is usually formed on the surface of the second metal layer opposite to the first metal layer. As a substrate having such a metal layer, for example, an ultra thin copper foil "Micro Thin" with a carrier copper foil manufactured by Mitsui Kinzoku Co., Ltd. can be mentioned.

A conductor layer may be formed on one or both surfaces of the substrate. In the following description, a substrate and a member including a conductor layer formed on the substrate surface are sometimes referred to as " wiring layer-attached substrate " Examples of the conductor material contained in the conductor layer include one selected from the group consisting of gold, platinum, palladium, silver, copper, aluminum, cobalt, chromium, zinc, nickel, titanium, tungsten, iron, tin, Or more of the above metals. As the conductor material, a single metal or an alloy may be used. Examples of the alloy include alloys of two or more metals selected from the above-mentioned group (for example, nickel-chromium alloy, copper-nickel alloy and copper-titanium alloy). Among them, chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver, or copper as a single metal from the viewpoint of versatility, cost, and ease of patterning of the conductor layer; And a nickel-chromium alloy as the alloy, a copper-nickel alloy, and an alloy of a copper-titanium alloy are preferable. Among them, chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver or copper; And a nickel-chromium alloy are more preferable, and a copper metal is particularly preferable.

The conductor layer may be patterned to function as, for example, a wiring layer. At this time, although the ratio of the line (circuit width) / space (width between circuits) of the conductor layer is not particularly limited, preferably 20/20 m or less (that is, pitch is 40 m or less) Mu m or less, more preferably 5/5 mu m or less, even more preferably 1/1 mu m or less, particularly preferably 0.5 / 0.5 mu m or more. The pitch does not have to be the same throughout the conductor layer. The minimum pitch of the conductor layer may be, for example, 40 占 퐉 or less, 36 占 퐉 or less, or 30 占 퐉 or less.

The thickness of the conductor layer depends on the design of the circuit board, but is preferably 3 占 퐉 to 35 占 퐉, more preferably 5 占 퐉 to 30 占 퐉, more preferably 10 占 퐉 to 20 占 퐉, 20 mu m. Further, when the insulating layer is polished or ground after the formation of the insulating layer, and the interlayer connection of the conductor layer is performed by exposing the conductor layer, the conductor layer performing the interlayer connection and the conductor layer not carrying out the interlayer connection, Are different. The thickness of the conductor layer (conductive filler) having the largest thickness among the conductor layers depends on the design of the circuit board, but is preferably 2 m or more and 100 m or less. The thickness of the conductor layer can be adjusted, for example, by repeating the pattern formation described below. The conductor layers to be interlayer-connected may be convex.

The conductor layer can be formed, for example, by laminating a dry film (photosensitive resist film) on a substrate, performing exposure and development on a dry film under a predetermined condition using a photomask to obtain a pattern dry film A step of forming a conductor layer by a plating method such as an electrolytic plating method using a patterned dry film as a plating mask, and a step of peeling a pattern dry film. As the dry film, a photosensitive dry film made of a photoresist composition can be used. For example, a dry film formed of a resin such as novolak resin or acrylic resin can be used. The conditions for laminating the base material and the dry film may be the same as those for laminating the base material and the resin sheet to be described later. The dry film can be peeled off, for example, by using an alkaline peeling solution such as a sodium hydroxide solution. If necessary, an unnecessary wiring pattern may be removed by etching or the like.

After the base material is prepared, a resin composition layer is formed on the base material. When the conductor layer is formed on the surface of the substrate, the formation of the resin composition layer is preferably carried out such that the conductor layer is embedded in the resin composition layer.

The resin composition layer is formed, for example, by laminating a resin sheet and a substrate. This lamination can be carried out, for example, by thermocompression bonding the resin sheet to the substrate on the support side and then bonding the resin composition layer to the substrate. Examples of the member for heating and pressing the resin sheet to the base material (hereinafter also referred to as " hot pressing member ") include a heated metal plate (SUS hard plate) or a metal roll have. It is also preferable to press the heat-press member through an elastic material such as heat-resistant rubber so that the resin sheet can sufficiently follow the surface unevenness of the substrate, instead of directly pressing the heat-press member to the resin sheet.

The lamination of the substrate and the resin sheet may be carried out by, for example, a vacuum lamination method. In the vacuum laminating method, the heat pressing temperature is preferably in the range of 60 占 폚 to 160 占 폚, more preferably 80 占 폚 to 140 占 폚. The heat pressing pressure is preferably in the range of 0.098 MPa to 1.77 MPa, more preferably 0.29 MPa to 1.47 MPa. The heat pressing time is preferably in a range from 20 seconds to 400 seconds, more preferably from 30 seconds to 300 seconds. The lamination is preferably performed under a reduced pressure of 13 hPa or less.

After lamination, the laminated resin sheet may be subjected to a smoothing treatment by pressing under a normal pressure (at atmospheric pressure), for example, a hot press member on the support side. The pressing condition of the smoothing treatment may be the same as the conditions of the hot pressing of the laminate. The lamination and smoothing may be continuously performed using a vacuum laminator.

The resin composition layer can be formed, for example, by a compression molding method. The forming conditions may be the same as the forming method of the resin composition layer in the step of forming the sealing layer of the semiconductor chip package described later.

After forming a resin composition layer on a substrate, the resin composition layer is thermally cured to form an insulating layer. The curing temperature of the resin composition layer varies depending on the type of the resin composition, but the curing temperature is usually in the range of 120 to 240 占 폚 (preferably in the range of 150 to 220 占 폚, more preferably 170 to 200 占 폚 , And the curing time is in the range of 5 minutes to 120 minutes (preferably 10 minutes to 100 minutes, more preferably 15 minutes to 90 minutes).

The resin composition layer may be subjected to a preheating treatment in which the resin composition layer is heated to a temperature lower than the curing temperature before the resin composition layer is thermally cured. For example, before the resin composition layer is thermally cured, the resin composition layer is heated at a temperature of generally 50 ° C or more and less than 120 ° C (preferably 60 ° C or more and 110 ° C or less, more preferably 70 ° C or more and 100 ° C or less) May be preliminarily heated for usually 5 minutes or longer (preferably 5 minutes to 150 minutes, more preferably 15 minutes to 120 minutes).

As described above, a circuit board having an insulating layer can be manufactured. Further, the method of manufacturing the circuit board may further include an arbitrary step.

For example, when a circuit board is manufactured using a resin sheet, the method of manufacturing a circuit board may include a step of peeling the resin sheet support. The support may be peeled off prior to thermal curing of the resin composition layer or peeled off after the resin composition layer is thermally cured.

The circuit board manufacturing method may include, for example, a step of forming an insulating layer and thereafter polishing the surface of the insulating layer. The polishing method is not particularly limited. For example, a surface grinding machine can be used to polish the surface of the insulating layer.

The method of manufacturing the circuit board may include, for example, a step (3) of interlayer connecting the conductor layers. In this step (3), a conductor layer (for example, a conductor layer formed on the substrate surface) provided on one side of the insulating layer is conducted to the other side of the conductor layer. The step (3) may include forming a via hole in the insulating layer, and forming a conductor layer at an appropriate position on the insulating layer including the position where the via hole is formed to perform the interlayer connection. Step (3) may include, for example, polishing or grinding the other side of the insulating layer, and exposing a conductor layer formed on one side of the insulating layer to perform interlayer connection.

In the case of performing the interlayer connection using a via-hole, for example, a via-hole is formed in the insulating layer formed on the wiring-layer-attached substrate, and then a conductor layer is formed on the opposite side of the substrate of the insulating layer to perform interlayer connection . Examples of the method of forming the via-hole include laser irradiation, etching, and mechanical drilling. Among them, laser irradiation is preferable. This laser irradiation can be performed using a suitable laser processing machine using any light source such as a carbon dioxide gas laser, a YAG laser, or an excimer laser. For example, laser irradiation may be performed on the support side of the resin sheet to form a via hole through the support and the insulating layer to expose the conductor layer on the substrate surface.

The laser irradiation can be carried out by an appropriate process according to the selected laser processing machine. The shape of the via-hole is not particularly limited, but is generally circular or approximately circular. The shape of the via-hole refers to the shape of the outline of the opening when viewed from the extending direction of the via-hole.

After the formation of the via-hole, it is preferable to perform the step of removing the smear in the via-hole. This process is sometimes called a desmear process. For example, when the formation of the conductor layer on the insulating layer is performed by a plating process, a wet desmear treatment may be performed on the via-hole. When the formation of the conductor layer on the insulating layer is performed by a sputtering process, a dry dispersion process such as a plasma treatment process may be performed. In addition, the insulating layer may be subjected to a roughening treatment by a desmearing step.

Further, the roughening treatment may be performed on the insulating layer before forming the conductor layer on the insulating layer. According to this roughening treatment, the surface of the insulating layer including the inside of the via-hole is normally roughened. As the harmonization treatment, either of dry and wet roughening treatment may be performed. Examples of the harmonic treatment of the dry process include a plasma treatment and the like. Examples of the wet roughening treatment include a swelling treatment with a swelling liquid, a roughening treatment with an oxidizing agent, and a neutralization treatment with a neutralizing liquid in this order.

After the via hole is formed, a conductor layer is formed on the insulating layer. By forming the conductor layer at the position where the via-hole is formed, the newly formed conductor layer and the conductor layer on the surface of the base material are electrically connected to each other and the interlayer connection is made. As a method of forming the conductor layer, for example, a plating method, a sputtering method, a vapor deposition method and the like can be given. Among them, a plating method is preferable. In a preferred embodiment, the insulating layer is plated on the surface of the insulating layer by a suitable method such as a semi-custom method or a pull-on-fill method to form a conductor layer having a desired wiring pattern. When the support in the resin sheet is a metal foil, a conductor layer having a desired wiring pattern can be formed by the subtractive method. The material of the conductor layer to be formed may be a single metal or an alloy. The conductor layer may have a single-layer structure or may have a multi-layer structure including two or more layers of different kinds of materials.

Here, examples of embodiments in which a conductor layer is formed on an insulating layer will be described in detail. A plating seed layer is formed on the surface of the insulating layer by electroless plating. Then, a mask pattern exposing a part of the plating seed layer is formed on the formed plating seed layer in accordance with the desired wiring pattern. An electrolytic plating layer is formed on the exposed plating seed layer by electrolytic plating. At that time, along with the formation of the electrolytic plating layer, the via holes may be filled by electrolytic plating to form the field vias. After the electrolytic plating layer is formed, the mask pattern is removed. Thereafter, an unnecessary plating seed layer is removed by a treatment such as etching to form a conductor layer having a desired wiring pattern. The dry film used for forming the mask pattern when forming the conductor layer is the same as that of the dry film.

The conductor layer may include not only a linear wiring but also an electrode pad (land) on which an external terminal can be mounted, for example. The conductor layer may be composed of only electrode pads.

The conductor layer may be formed by forming an electroplated layer and a via after forming the plating seed layer without using a mask pattern, and then performing patterning by etching.

When the interlayer connection is performed by polishing or grinding the insulating layer, for example, the insulating layer formed on the wiring layer-attached substrate is polished or ground so that the conductor layer formed on the substrate is exposed on the side opposite to the substrate of the insulating layer. As the polishing method and the grinding method of the insulating layer, any method capable of exposing the conductor layer on the surface of the substrate can be used. Among them, a method in which a polished surface or a polished surface parallel to the layer plane of the insulating layer is obtained by polishing or cutting is preferable. For example, a chemical mechanical polishing method using a chemical mechanical polishing apparatus, a mechanical polishing method such as a buff, and a planar grinding method using a grinding wheel. Further, in the case of performing the interlayer connection by polishing or grinding the insulating layer, as in the case of performing the interlayer connection using the via hole, the step of removing the smear, the step of performing the roughening treatment, the step of forming the conductor layer May be carried out. Further, it is not necessary to expose all conductor layers on the surface of the substrate, and a part of the conductor layer may be exposed.

The method of manufacturing the circuit board may include, for example, a step (4) of removing the substrate. By removing the substrate, a circuit board having an insulating layer and a conductor layer embedded in the insulating layer can be obtained. This step (4) can be carried out, for example, when a substrate having a peelable first metal layer and a second metal layer is used. Hereinafter, a suitable example will be described. A conductor layer is formed on the surface of the second metal layer of the substrate having the first metal layer and the second metal layer. Further, a resin composition layer is formed on the second metal layer so that the conductor layer is embedded in the resin composition layer, followed by thermosetting to obtain an insulating layer. Thereafter, after the interlayer connection is performed as required, the portion other than the second metal layer of the substrate is peeled off. Then, the second metal layer is etched with an etching solution such as an aqueous solution of copper chloride, for example. This removes the substrate. At this time, if necessary, the substrate may be removed while the conductor layer is protected by a protective film.

In another embodiment, the circuit board can be manufactured using a prepreg. The prepreg is obtained by impregnating a sheet-like fiber base material with a resin composition, for example, by a hot melt method, a solvent method or the like. Examples of the sheet-like fiber base material include glass cloth, aramid nonwoven fabric, and liquid crystal polymer nonwoven fabric. From the viewpoint of thinning, the thickness of the sheet-like fibrous base material is preferably 900 占 퐉 or less, more preferably 800 占 퐉 or less, further preferably 700 占 퐉 or less, particularly preferably 600 占 퐉 or less, 1 mu m or more, 1.5 mu m or more, or 2 mu m or more. The thickness of the prepreg may be the same as that of the resin composition layer in the resin sheet. The method of manufacturing a circuit board using such a prepreg is basically the same as that in the case of using a resin sheet.

[13. Semiconductor chip package]

The semiconductor chip package according to the first embodiment of the present invention includes the above-described circuit board and a semiconductor chip mounted on the circuit board. This semiconductor chip package can be manufactured by bonding a semiconductor chip to a circuit board.

The bonding conditions between the circuit board and the semiconductor chip can be arbitrary conditions such that the terminal electrodes of the semiconductor chip and the circuit wiring of the circuit board can be conductively connected. For example, the conditions used in the flip chip mounting of semiconductor chips can be employed. Further, for example, an insulating adhesive may be interposed between the semiconductor chip and the circuit board.

An example of the bonding method is a method of pressing the semiconductor chip onto a circuit board. As the compression conditions, the compression temperature is usually in the range of 120 ° C. to 240 ° C. (preferably in the range of 130 ° C. to 200 ° C., more preferably in the range of 140 ° C. to 180 ° C.), and the compression time is usually 1 second to 60 seconds (Preferably from 5 seconds to 30 seconds).

Another example of the bonding method is a method of bonding the semiconductor chip to the circuit board by reflowing. The reflow condition may be in the range of 120 占 폚 to 300 占 폚.

After bonding the semiconductor chip to the circuit board, the semiconductor chip may be filled with the mold underfill material. As the mold underfill material, the above-mentioned resin composition may be used, or the resin sheet described above may be used.

A semiconductor chip package according to a second embodiment of the present invention includes a semiconductor chip and a cured product of the resin composition that seals the semiconductor chip. In such a semiconductor chip package, usually, the cured product of the resin composition functions as a sealing layer. As the semiconductor chip package according to the second embodiment, for example, a fan-out type WLP can be mentioned.

1 is a cross-sectional view schematically showing a fan-out WLP as an example of a semiconductor chip package according to a second embodiment of the present invention. The semiconductor chip package 100 as a fan-out type WLP includes, for example, as shown in FIG. 1, a semiconductor chip 110; A sealing layer 120 formed to cover the periphery of the semiconductor chip 110; A rewiring layer 130 as an insulating layer provided on a surface of the semiconductor chip 110 opposite to the sealing layer 120; A re-wiring layer 140 as a conductor layer; A solder resist layer 150; And a bump 160.

In this method of manufacturing a semiconductor chip package,

(A) a step of laminating a temporary film on a substrate,

(B) a step of temporarily fixing the semiconductor chip on the temporary fixing film,

(C) a step of forming a sealing layer on the semiconductor chip,

(D) peeling the base material and the temporary fixing film from the semiconductor chip,

(E) a step of forming a rewiring layer as an insulating layer on a surface of the base material and the temporary fixing film of the semiconductor chip,

(F) a step of forming a rewiring layer as a conductor layer on the rewiring layer, and

(G) forming a solder resist layer on the re-wiring layer,

. Further, in the above-described method of manufacturing a semiconductor chip package,

(H) A step of dicing a plurality of semiconductor chip packages into respective semiconductor chip packages and separating them

May be included. Hereinafter, this manufacturing method will be described in detail.

(Step (A))

Step (A) is a step of laminating a temporary film on a substrate. The lamination conditions of the substrate and the temporary film may be the same as the lamination conditions of the substrate and the resin sheet in the method for producing a circuit board.

As the substrate, for example, a silicon wafer; Glass wafers; A glass substrate; Metal substrates such as copper, titanium, stainless steel, and cold rolled steel sheets (SPCC); A substrate such as an FR-4 substrate in which an epoxy resin or the like is impregnated with glass fiber and thermally cured; A substrate made of a bismaleimide triazine resin such as BT resin; And the like.

The temporary fixing film can be peeled off from the semiconductor chip, and any material capable of temporarily fixing the semiconductor chip can be used. Commercially available products include "River alpha" manufactured by Nitto Denko Co., Ltd. and the like.

(Process (B))

The step (B) is a step of temporarily fixing the semiconductor chip on the temporary fixing film. The temporary fixation of the semiconductor chip can be performed by using, for example, a flip chip bonder, die bonder or the like. The layout and the arrangement number of the arrangement of the semiconductor chips can be appropriately set in accordance with the shape, the size, the number of the semiconductor packages produced for the purpose, and the like. For example, it is also possible to arrange the semiconductor chips on a matrix of a plurality of rows, which is a multiple-row structure, and to fix the semiconductor chips.

(Step (C))

The step (C) is a step of forming a sealing layer on the semiconductor chip. The sealing layer is formed by a cured product of the above-mentioned resin composition. The sealing layer is usually formed by a method including a step of forming a resin composition layer on a semiconductor chip and a step of thermally curing the resin composition layer to form a sealing layer.

It is preferable that the resin composition is formed by compression molding using the excellent compression moldability. In the compression molding method, a semiconductor chip and a resin composition are usually placed in a mold, and a resin composition layer covering the semiconductor chip is formed by applying pressure and, if necessary, heat to the resin composition in the mold.

Specific operations of the compression molding method can be performed, for example, as follows. As a mold for compression molding, an upper mold and a lower mold are prepared. Further, the resin composition is applied to the semiconductor chip fixed on the temporary fixing film as described above. The semiconductor chip coated with the resin composition is attached to the lower mold together with the base material and the temporary fixing film. Thereafter, the upper mold and the lower mold are clamped, and heat and pressure are applied to the resin composition to perform compression molding.

The concrete operation of the compression molding method may be, for example, as follows. As a mold for compression molding, an upper mold and a lower mold are prepared. The resin composition is placed on the lower mold. Further, the semiconductor chip is attached to the upper mold together with the base material and the temporary fixing film. Thereafter, the upper and lower molds are clamped so that the resin composition placed on the lower mold is in contact with the semiconductor chip attached to the upper mold, and heat and pressure are applied to perform compression molding.

The molding conditions vary depending on the composition of the resin composition, and appropriate conditions can be adopted so that good sealing can be achieved. For example, the temperature of the mold at the time of molding is preferably a temperature at which the resin composition can exhibit excellent compression moldability, preferably 80 ° C or more, more preferably 100 ° C or more, particularly preferably 120 ° C or more Preferably 200 占 폚 or lower, more preferably 170 占 폚 or lower, particularly preferably 150 占 폚 or lower. The pressure to be applied during molding is preferably 1 MPa or more, more preferably 3 MPa or more, particularly preferably 5 MPa or more, preferably 50 MPa or less, more preferably 30 MPa or less, particularly preferably 20 MPa or less . The curing time is preferably 1 minute or more, more preferably 2 minutes or more, particularly preferably 5 minutes or more, preferably 60 minutes or less, more preferably 30 minutes or less, particularly preferably 20 minutes or less to be. Usually, after the formation of the resin composition layer, the mold is separated. The separation of the mold may be performed before or after the thermosetting of the resin composition layer.

The resin composition layer may be formed by laminating a resin sheet and a semiconductor chip. For example, a resin composition layer can be formed on a semiconductor chip by heat-pressing the resin composition layer of the resin sheet and the semiconductor chip. The lamination of the resin sheet and the semiconductor chip can usually be performed in the same manner as the lamination of the resin sheet and the substrate in the method for producing a circuit board by using a semiconductor chip instead of the substrate.

After forming a resin composition layer on a semiconductor chip, the resin composition layer is thermally cured to obtain a sealing layer covering the semiconductor chip. As a result, the semiconductor chip is sealed by the cured product of the resin composition. The thermosetting condition of the resin composition layer may be the same as the thermosetting condition of the resin composition layer in the circuit board production method. Also, before the resin composition layer is thermally cured, the resin composition layer may be subjected to a preheating treatment for heating the resin composition layer to a temperature lower than the curing temperature. The conditions for the preheating treatment may be the same as those for the preheating treatment in the circuit board manufacturing method.

(Step (D))

The step (D) is a step of peeling the base material and the temporary film from the semiconductor chip. As the peeling method, it is preferable to adopt an appropriate method depending on the material of the temporary fixing film. As the peeling method, for example, there can be mentioned a method in which the temporary fixing film is peeled by heating, foaming or expanding. As the peeling method, for example, a method of irradiating a temporary fixing film with ultraviolet rays through a substrate to decrease the adhesive force of the fixing film and peeling off can be mentioned.

In the method of peeling the temporary fixing film by heating, foaming or expanding, the heating is usually carried out at 100 to 250 ° C for 1 second to 90 seconds or 5 minutes to 15 minutes. In addition, in the method of peeling off the adhesive force of the temporary fixing film by irradiating the ultraviolet ray, the irradiation amount of the ultraviolet ray is usually 10 mJ / cm 2 to 1000 mJ / cm 2.

(Step (E))

The step (E) is a step of forming a rewiring layer as an insulating layer on the surface of the substrate of the semiconductor chip and the surface on which the temporary fixing film is peeled.

As the material of the rewiring film forming layer, any material having an insulating property can be used. Among them, a photosensitive resin and a thermosetting resin are preferable from the viewpoint of easiness of manufacturing a semiconductor chip package. As the thermosetting resin, the resin composition of the present invention may be used.

After the rewiring film formation layer is formed, a via hole may be formed in the rewiring formation layer in order to connect the semiconductor chip and the rewiring layer to each other.

In the method of forming a via hole when the material of the rewiring film forming layer is a photosensitive resin, an active energy ray is usually irradiated to the surface of the rewiring layer through a mask pattern, and the rewiring layer of the irradiating portion is photo-cured. Examples of the active energy ray include ultraviolet rays, visible rays, electron rays and X-rays, and ultraviolet rays are particularly preferable. The irradiation amount of the ultraviolet rays and the irradiation time can be suitably set in accordance with the photosensitive resin. Examples of the exposure method include a contact exposure method in which the mask pattern is exposed to the rewiring film forming layer and exposed, and the non-contact exposure method in which the mask pattern is exposed to light using a parallel light beam without being closely attached to the rewiring layer.

After the rewiring layer is photocured, the rewiring layer is developed, and the unexposed portion is removed to form a via hole. The development may be carried out either in the wet process or in the dry process. Examples of the developing method include a dip method, a paddle method, a spray method, a brushing method, and a scrapping method, and from the viewpoint of resolution, a paddle method is suitable.

Examples of the method of forming via holes in the case where the material of the rewiring film forming layer is a thermosetting resin include laser irradiation, etching, and mechanical drilling. Among them, laser irradiation is preferable. The laser irradiation can be performed using a suitable laser processing machine using a light source such as a carbon dioxide gas laser, a UV-YAG laser, or an excimer laser.

The shape of the via-hole is not particularly limited, but is generally circular (approximately circular). The via diameter of the via hole is preferably 50 占 퐉 or less, more preferably 30 占 퐉 or less, further preferably 20 占 퐉 or less, preferably 3 占 퐉 or more, preferably 10 占 퐉 or more, more preferably 15 占 퐉 Or more. Here, the top diameter of the via-hole refers to the diameter of the opening of the via-hole on the surface of the rewiring layer.

(Step (F))

Step (F) is a step of forming a rewiring layer as a conductor layer on the rewiring layer. The method of forming the rewiring layer on the rewiring film forming layer may be the same as the method of forming the conductor layer on the insulating layer in the method of manufacturing the circuit board. Further, the step (E) and the step (F) may be repeated to build up (build up) alternately the rewiring layer and the rewiring layer.

(Step (G))

Step (G) is a step of forming a solder resist layer on the re-wiring layer. As the material of the solder resist layer, any material having an insulating property can be used. Among them, a photosensitive resin and a thermosetting resin are preferable from the viewpoint of ease of manufacture of a semiconductor chip package. As the thermosetting resin, the resin composition of the present invention may be used.

Further, in the step (G), bumping processing for forming bumps may be performed, if necessary. The bumping process can be performed by solder balls, solder plating, or the like. The formation of the via-hole in the bumping process can be performed in the same manner as the process (E).

(Step (H))

The semiconductor chip package manufacturing method may include the step (H) in addition to the steps (A) to (G). Step (H) is a step of dicing a plurality of semiconductor chip packages into individual semiconductor chip packages and forming them into pieces. A method of dicing a semiconductor chip package into individual semiconductor chip packages is not particularly limited.

The semiconductor chip package according to the third embodiment of the present invention is a semiconductor chip package 100 in which the rewiring layer 130 or the solder resist layer 150 in the semiconductor chip package 100 shown in Fig. A semiconductor chip package formed of a cured product of the resin composition of the present invention.

[14. Semiconductor device]

Examples of the semiconductor device on which the above-described semiconductor chip package is mounted include electronic products such as a computer, a mobile phone, a smart phone, a tablet device, a wearable device, a digital camera, a medical device, (For example, a motorcycle, an automobile, a tank, a ship, an aircraft, and the like), and the like.

[Example]

Hereinafter, the present invention will be described in detail with reference to examples. However, the present invention is not limited to the following examples. In the following description, " part " and "% " representing the amount means " part by mass " and "% by mass ", respectively, unless otherwise specified. In addition, the operations described below were carried out in an environment of normal temperature and normal pressure unless otherwise specified.

[Method of measuring viscosity of epoxy resin]

In the following examples and comparative examples, the viscosity of the epoxy resin was measured by using an E-type viscometer ("RE-25U" manufactured by Toki Sangyo Co., Ltd., using a cone rotor of 1 ° 34 '× R24) .

[Example 1]

2 parts of a liquid polybutadiene epoxy resin ("JP400" manufactured by Nippon Soda Co., Ltd., epoxy equivalent: 230, number average molecular weight Mn = 3500, viscosity at 45 ° C: 5.5 Pa · s, glass transition temperature: 90 parts of spherical silica (average particle diameter 3.5 mu m, specific surface area 3.7 m2 / g) surface-treated with aminopropyltrimethoxysilane (KBM573 manufactured by Shin-Etsu Chemical Co., Ltd.), an acid anhydride curing agent (manufactured by Shin- , 3 parts of a glycidylamine type epoxy resin ("EP-3980S" manufactured by ADEKA Corporation, epoxy equivalent amount: 115), 10 parts of a glycidylamine type epoxy resin (manufactured by Mitsubishi Kagaku Co., , 3 parts of bisphenol A epoxy resin ("EXA-850CRP" manufactured by DIC Corporation, epoxy equivalent 173) and 0.1 part of imidazole-based curing accelerator ("2E4MZ" manufactured by Shikoku Chemicals Co., Ltd.) To obtain a resin composition.

[Example 2]

5 parts of a cresol novolak type curing agent ("KA-1160" manufactured by DIC Corporation, phenolic hydroxyl equivalent amount 117) was used in place of 10 parts of an acid anhydride curing agent ("HNA-100"

In the same manner as in Example 1 except for the above, a resin composition was obtained.

[Example 3]

5 parts of a liquid novolak type phenol curing agent ("MEH-8000H" manufactured by Meiwa Kasei Co., Ltd., phenolic hydroxyl equivalent 141) was used in place of 10 parts of an acid anhydride curing agent ("HNA-100"

In the same manner as in Example 1 except for the above, a resin composition was obtained.

[Example 4]

The amount of glycidylamine type epoxy resin ("630" manufactured by Mitsubishi Chemical Corporation) was changed from 7 parts to 8 parts.

Further, 2 parts of an aliphatic epoxy resin ("YED-216D" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent: 120) was used instead of 3 parts of a bisphenol A type epoxy resin ("EXA-850CRP"

In the same manner as in Example 1 except for the above, a resin composition was obtained.

[Example 5]

5 parts of a liquid novolak type phenol curing agent ("MEH-8000H" manufactured by Meiwa Kasei Co., Ltd., phenolic hydroxyl equivalent 141) was used in place of 10 parts of an acid anhydride curing agent ("HNA-100"

Further, 7 parts of glycidylamine type epoxy resin ("ELM-100H" manufactured by Tsumito Tomokagaku, epoxy equivalent weight 106) was used instead of 7 parts of glycidylamine type epoxy resin ("630" manufactured by Mitsubishi Chemical Corporation) .

In the same manner as in Example 1 except for the above, a resin composition was obtained.

[Comparative Example 1]

Except that a polybutadiene epoxy resin ("JP-200", manufactured by Nihon Soda Co., Ltd., epoxy equivalent weight: 210 to 240, number average molecular weight Mn = 2200, 45 ° C.) was used instead of 2 parts of liquid polybutadiene epoxy resin ("JP400" Of viscosity of 100 Pa · s) were used.

In the same manner as in Example 1 except for the above, a resin composition was obtained.

[Comparative Example 2]

A polybutadiene epoxy resin ("PB-3600", manufactured by Daicel Chemical Industries, Ltd., epoxy equivalent: 193, number average molecular weight Mn = 5900, viscosity at 45 ° C: 45 Pa Lt; / RTI > s) was used.

Further, 5 parts of a cresol novolak type curing agent ("KA-1160" manufactured by DIC Corporation, phenolic hydroxyl equivalent amount 117) was used instead of 10 parts of an acid anhydride curing agent ("HNA-100" manufactured by Shin-Nippon Rikagaku).

In the same manner as in Example 1 except for the above, a resin composition was obtained.

[Comparative Example 3]

A liquid polybutadiene epoxy resin (" JP400 ", manufactured by Nippon Soda Co., Ltd.) was not used.

5 parts of a cresol novolak type curing agent ("KA-1160" manufactured by DIC Corporation, phenolic hydroxyl equivalent amount 117) was used instead of 10 parts of an acid anhydride curing agent ("HNA-100" manufactured by Shin Nippon Rikagaku Co., Ltd., acid anhydride equivalent 179) Respectively.

Further, the amount of glycidylamine type epoxy resin ("EP-3980S" manufactured by ADEKA Corporation, epoxy equivalent amount 115) was changed from 3 parts to 5 parts.

In the same manner as in Example 1 except for the above, a resin composition was obtained.

[Measurement of linear thermal expansion coefficient (CTE) of cured product of resin composition]

(Preparation of cured product for evaluation)

(Polyethylene terephthalate film " 501010 " manufactured by Lintec Corp., thickness 38 占 퐉, 240 mm square) having a release-treated surface was prepared. A glass cloth base epoxy resin double-sided copper-clad laminate (" R5715ES ", manufactured by Matsushita Denshoku Co., Ltd., thickness: 0.7 mm, 255 mm square) was superimposed on the untreated surface of the polyethylene terephthalate film, And fixed with a tape (width 10 mm). Thus, a fixed PET film including a polyethylene terephthalate film and a glass-clad base epoxy resin double-sided copper-clad laminate was obtained.

Methyl ethyl ketone was added to the resin compositions prepared in Examples and Comparative Examples to dilute them, and the viscosity of the resin compositions was adjusted to 4000 mPa · s. As a support, a polyethylene terephthalate film (" Lumira R80 " manufactured by Toray Industries, Inc., thickness 38 占 퐉, softening point 130 占 폚) having a surface subjected to a release treatment with an alkyd resin releasing agent (AL- Respectively. On the support, the resin composition whose viscosity was adjusted as described above was applied using a die coater so that the thickness of the resin composition layer after drying became 100 mu m. The coated resin composition layer was dried at 80 to 120 캜 (average 100 캜) for 10 minutes to obtain a resin sheet including a support and a resin composition layer.

Each resin sheet (thickness of the resin composition layer: 100 mu m) was cut into a square of 200 mm square. The cut resin sheet was placed on a polyethylene terephthalate film side of the fixed PET film (that is, a mold releasing treatment) by using a batch type vacuum pressure laminator (CVT700, a two stage build-up laminator manufactured by Nikko Materials Company) Was applied so as to be in contact with the center of the multilayered sample to obtain a multilayered sample. The laminate was subjected to pressure reduction for 30 seconds to adjust the air pressure to 13 hPa or lower, followed by compression at a temperature of 100 deg. C and a pressure of 0.74 MPa for 30 seconds.

Subsequently, the obtained double-layered sample was placed in an oven at 100 ° C., heated for 30 minutes, transferred to an oven at 175 ° C., and heated for 30 minutes to thermally cure the resin composition layer. Thereafter, the multilayered sample was taken out under a room temperature atmosphere, and the support was peeled off. The resultant was placed in an oven at 190 DEG C and heated for 90 minutes to thermally cure the resin composition layer. The obtained double-layered sample contained a cured layer of the resin composition layer, a polyethylene terephthalate film, and a glass-clad epoxy resin double-sided copper clad laminate in this order.

After the above-described thermosetting, the polyimide adhesive tape was peeled off, the glass cloth substrate epoxy resin double-sided copper-clad laminate was peeled off, and the polyethylene terephthalate film was further peeled off to obtain a cured resin composition. The resulting cured product may be referred to as " cured product for evaluation ".

(CTE measurement)

The evaluation cured product was cut into a width of 5 mm and a length of 15 mm to obtain a test piece. This test piece was subjected to thermomechanical analysis by a tensile weighting method using a thermomechanical analyzer ("Thermo Plus TMA8310" manufactured by Rigaku Corporation). Specifically, after the test piece was mounted on the thermomechanical analyzer, measurement was carried out twice in succession under the conditions of a load of 1 g and a temperature raising rate of 5 캜 / min. Then, in the second measurement, the coefficient of linear thermal expansion (ppm / DEG C) in the plane direction in the range of 25 DEG C to 150 DEG C was calculated.

[Measurement of bending amount]

The resin compositions prepared in Examples and Comparative Examples were compression-molded on a 12-inch silicon wafer using a compression mold apparatus (mold temperature: 130 占 폚, pressure: 6 MPa, cure time: 10 minutes) To form a composition layer. Thereafter, the resin composition layer was heated at 180 캜 for 90 minutes to thermally cure the resin composition layer. Thus, a sample substrate including a silicon wafer and a cured layer of the resin composition was obtained.

The amount of deflection when the sample substrate was heated and cooled in the order of 35 ° C, 260 ° C and 35 ° C was measured using a shadow moire measuring device ("ThermoireAXP" manufactured by Akorometrix). The measurement was carried out in accordance with JEITA EDX-7311-24 of the Electronic Information Technology Industry Association Standard. Specifically, the virtual plane calculated by the least squares method of all the data on the substrate surface of the measurement region was taken as the reference plane, and the difference between the minimum value and the maximum value in the vertical direction from the reference plane was found as the bending amount. &Quot; good " when the amount of warpage was less than 2 mm, and " defective "

[Evaluation of adhesion]

A 12-inch silicon wafer was provided with a thermal release tape (" Riba Alpha " manufactured by Nitto Denko Co., Ltd.) which was tacky at room temperature and was easily peeled off upon heating. Onto this heat peeling sheet, 100 pieces of 1 cm square silicon chips (400 m in thickness) were arranged at regular intervals. Subsequently, the resin compositions prepared in Examples and Comparative Examples were compression-molded on a heat peelable sheet on which a silicon chip was placed by using a compression mold apparatus (mold temperature: 130 占 폚, pressure: 6 MPa, cure time: 10 minutes) Thereby forming a resin composition layer having a thickness of 500 mu m with a silicon chip embedded therein. The sheet was heated at 180 占 폚 to make the heat-peelable sheet peelable, and the heat-peelable sheet and the silicon wafer were removed. Thereafter, the resin composition layer was heated at 180 캜 for 90 minutes to thermally cure the resin composition layer. Thus, a resin wafer including a cured layer of the resin composition and a silicon chip embedded in the cured layer was obtained.

Thereafter, a thermal cycle test of the resin wafer was carried out. This thermal cycle test is a test in which the cooling to -55 ° C and the heating to 125 ° C are performed in one cycle, and the above cooling and heating are repeated for 1000 cycles. After the thermal cycle test, the resin wafer was observed. When the delamination occurred at the interface between the silicon chip and the cured layer, it was judged as " defective ", and the case where no delamination occurred was judged as " good ". Further, when a crack occurred on the surface of the resin composition layer after compression molding of the resin composition, it was judged " crack ".

[Evaluation of compression moldability]

The resin compositions prepared in Examples and Comparative Examples were compression-molded on a 12-inch silicon wafer using a compression mold apparatus (mold temperature: 130 占 폚, pressure: 6 MPa, cure time: 10 minutes) To form a composition layer. Then, when the resin composition layer was observed up to the end portion of the wafer, the case where the resin composition could be filled up to the wafer edge was evaluated as " good "Quot; crack ".

[Measurement method of dielectric tangent]

The resin compositions prepared in Examples and Comparative Examples were compression-molded on an SUS plate subjected to mold release treatment on the surface using a compression mold apparatus (mold temperature: 130 占 폚, pressure: 6 MPa, cure time: 10 minutes) Thereby forming a resin composition layer having a thickness of 300 mu m. The SUS plate was peeled off and the resin composition layer was thermally cured by heating at 180 DEG C for 90 minutes to obtain a cured layer of the resin composition. This cured layer was cut into a length of 80 mm and a width of 2 mm to obtain an evaluation sample for dielectric loss tangent measurement. This evaluation sample was subjected to a cavity resonance perturbation method using an analyzer ("HP8362B" manufactured by Agilent Technologies), and dielectric loss tangent was measured at a measurement temperature of 23 ° C and a measurement frequency of 5.8 GHz.

[result]

The results of the above-described Examples and Comparative Examples are shown in the following table.

[Table 1]

[Table 1. Results of Examples and Comparative Examples]

[Review]

As can be seen from Table 1, the resin compositions according to the Examples are excellent in compression moldability. Further, the cured product of the resin composition according to the embodiment has a low coefficient of linear thermal expansion, is capable of suppressing warpage, and is excellent in high adhesion even when heating and cooling are repeated. Therefore, according to the present invention, it is possible to obtain a cured product having a low coefficient of linear thermal expansion, capable of suppressing warpage, capable of obtaining high adhesiveness even after repeated heating and cooling, and capable of realizing a resin composition layer excellent in compression moldability .

Further, in comparison with Comparative Example 3 in which an epoxy resin having an alkene skeleton in a molecule is not used, the resin composition of the present invention using an epoxy resin having an alkene skeleton in a molecule generally has a low dielectric loss tangent It was confirmed that the cargo was obtained.

In Examples 1 to 5, even when the components (D) and (E) were not contained, it was found that the same results as those of the above-mentioned Examples were obtained although the degree is different.

100 semiconductor chip package
110 semiconductor chip
120 sealing layer
130 Cultivation line layer
140 rewiring layer
150 solder resist layer
160 bump

Claims (14)

(A) an epoxy resin having a viscosity of 20 Pa · s or less at 45 ° C and having an alkene skeleton in the molecule,
(B) an inorganic filler, and
(C) a curing agent. The resin composition according to claim 1, wherein the component (A) has a polybutadiene structure in the molecule. The resin composition according to claim 1, wherein the component (A) has a viscosity of 15 Pa · s or less at 45 ° C. The resin composition according to claim 1, wherein the content of the component (A) is 0.2% by mass to 10% by mass based on 100% by mass of the nonvolatile component of the resin composition. The resin composition according to claim 1, wherein the component (B) has an average particle diameter of 0.1 占 퐉 to 10 占 퐉. The resin composition according to claim 1, wherein the component (C) is an acid anhydride-based curing agent or a phenol-based curing agent. The resin composition according to claim 1, further comprising (D) an epoxy resin other than the component (A). The resin composition according to claim 1, further comprising (E) a curing accelerator. The resin composition according to claim 1, which is a resin composition for sealing a semiconductor or an insulating layer. The resin composition according to claim 1, which is a liquid resin composition. A resin sheet having a support and a resin composition layer comprising the resin composition according to any one of claims 1 to 10 provided on the support. A circuit board comprising an insulating layer formed by a cured product of the resin composition according to any one of claims 1 to 10. A semiconductor chip package comprising the circuit board according to claim 12 and a semiconductor chip mounted on the circuit board. A semiconductor chip package comprising a semiconductor chip and a cured product of the resin composition according to any one of claims 1 to 10 for sealing the semiconductor chip.

Images