KR20180111200A - Semiconductor device package and optical assembly - Google Patents

Abstract

Embodiments relate to a semiconductor device package and an optical assembly comprising the same.
A semiconductor device package according to an embodiment includes a substrate 205; A semiconductor device 100 on the substrate 205; A housing (230) disposed on the substrate (205) and disposed around the semiconductor device (100); And a first diffusion unit 250 spaced upward from the semiconductor device 100 and disposed on the housing 230.
The diffusion unit 250 may be disposed on the first area A1 of the upper surface of the housing 230. [
The embodiment may include a first translucent bonding layer 240 disposed on a second area A2 of the upper surface of the housing 230. [

Description

Technical Field [0001] The present invention relates to a semiconductor device package and an optical assembly including the same,

More particularly, the present invention relates to a semiconductor light emitting device, a semiconductor light source device, a semiconductor optical device, a semiconductor light source chip, a light emitting device, a light emitting device package, and an optical transceiver module, an autofocus device, will be.

Semiconductor devices including compounds such as GaN and AlGaN have many merits such as wide and easy bandgap energy, and can be used variously as light emitting devices, light receiving devices, and various diodes.

Particularly, a light emitting device such as a light emitting diode or a laser diode using a semiconductor material of Group 3-5 or 2-6 group semiconductors can be applied to various devices such as a red, Blue, and ultraviolet rays. By using fluorescent materials or combining colors, it is possible to realize a white light beam with high efficiency. Also, compared to conventional light sources such as fluorescent lamps and incandescent lamps, low power consumption, Speed, safety, and environmental friendliness.

In addition, when a light-receiving element such as a photodetector or a solar cell is manufactured using a semiconductor material of Group 3-5 or Group 2-6 compound semiconductor, development of a device material absorbs light of various wavelength regions to generate a photocurrent , It is possible to use light in various wavelength ranges from the gamma ray to the radio wave region. It also has advantages of fast response speed, safety, environmental friendliness and easy control of device materials, so it can be easily used for power control or microwave circuit or communication module.

Therefore, a transmission module of the optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, a white light emitting element capable of replacing a fluorescent lamp or an incandescent lamp Diode lighting devices, automotive headlights, traffic lights, and gas and fire sensors. Further, applications can be extended to high frequency application circuits, other power control devices, and communication modules.

In the conventional semiconductor light source device technology, there is a vertical cavity surface-emitting laser (VCSEL), which is used in optical communication, optical parallel processing, optical connection, and autofocus device.

Also, in the prior art, the vertical resonance type surface emitting laser is utilized as a high-power VCSEL package structure for a vehicle or a mobile.

On the other hand, in the conventional high-power VCSEL package structure, a diffuser is used to form a certain angle of view (FoV). When a diffusive portion is detached due to an impact during use in a vehicle or a mobile, There is a risk that a person may be blinded if it is examined in a person's eyes. Accordingly, there is a need for research on a semiconductor device package that can be applied to a vehicle or applied to applications such as human motion, and to prevent strong light directly incident on a person.

In addition, in the prior art, semiconductor devices are required to have high output and high voltage driving as their application fields are diversified. The temperature of the semiconductor device package is increased by the heat generated from the semiconductor device due to the high output and high voltage driving of the semiconductor device.

Accordingly, there is a demand for a method for efficiently discharging heat generated in a semiconductor device package. In addition, miniaturization of a semiconductor device package is strongly required for miniaturization of a product. Therefore, there is an increasing demand for a semiconductor device package that can efficiently emit heat generated in a semiconductor device while being small-sized.

Also, in the prior art, when the semiconductor device is required to be driven with high output and high voltage, moisture penetration negatively affects the mechanical and electrical reliability of the semiconductor device, but a proper countermeasure is not available.

One of the technical problems of the embodiments is to provide a semiconductor device package and an optical assembly that are excellent in mechanical stability and reliability and can safely protect an element disposed therein from an external impact.

In addition, one of the technical problems of the embodiments is to provide a semiconductor device package and an optical assembly having excellent heat dissipation characteristics while providing high output light.

In addition, one of the technical problems of the embodiments is to provide a semiconductor device package and an optical assembly that can prevent moisture penetration into the interior while providing light of high output.

The technical problem of the embodiment is not limited to the contents described in this item but includes those that can be grasped from the entire description of the invention.

A semiconductor device package according to an embodiment includes a substrate 205; A semiconductor device 100 on the substrate 205; A housing (230) disposed on the substrate (205) and disposed around the semiconductor device (100); And a first diffusion unit 250 spaced upward from the semiconductor device 100 and disposed on the housing 230.

The diffusion unit 250 may be disposed on the first area A1 of the upper surface of the housing 230. [

The embodiment may include a first translucent bonding layer 240 disposed on a second area A2 of the upper surface of the housing 230. [

The semiconductor device package according to the embodiment further includes a substrate 205; A semiconductor device 100 on the substrate 205; A housing (230) disposed on the substrate (205) and disposed around the semiconductor device (100); And a second diffusion portion 250a spaced apart from the semiconductor device 100 and disposed on the housing 230. [

The diffusion unit 250 may be disposed on the first area A1 of the upper surface of the housing 230. [

The embodiment may include a second translucent bonding layer 240a disposed on a second region A2 of the upper surface of the housing 230. [

The second diffusion portion 250a may include a first inclined surface S1.

 An optical assembly according to an embodiment may comprise the semiconductor device package.

According to the embodiment, there is a technical effect that it is possible to provide a semiconductor device package and an optical assembly which are excellent in mechanical stability and reliability and can safely protect an element disposed therein from an external impact.

In addition, according to the embodiment, there is a technical effect that a semiconductor device package and an optical assembly having excellent heat dissipation characteristics while providing high output light can be provided.

In addition, according to the embodiment, there is a technical effect that a semiconductor device package and an optical assembly that can prevent moisture penetration into the inside while providing light with high output power can be provided.

The technical effect of the embodiment is not limited to the contents described in this item, but includes those that can be grasped from the entire description of the invention.

1 is a cross-sectional view of a semiconductor device package according to a first embodiment;
2 to 4 are a top view and a cross-sectional view of a semiconductor device that may be employed in a semiconductor device package according to an embodiment.
5 is a cross-sectional view of a semiconductor device package according to a second embodiment;
6 is a cross-sectional view of a semiconductor device package according to a third embodiment;
FIGS. 7 to 11 are diagrams showing a manufacturing process of the semiconductor device package according to the embodiment. FIG.
12 is a perspective view of a mobile terminal to which an optical assembly including a semiconductor device package according to an embodiment is applied.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments that can be specifically realized for solving the above problems will be described with reference to the accompanying drawings.

In describing an embodiment, when it is described as being formed "on or under" of each element, an upper or lower (on or under) Wherein both elements are in direct contact with each other or one or more other elements are indirectly formed between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

The semiconductor device of the embodiment may include various electronic devices such as a light emitting device and a light receiving device. The light emitting device and the light receiving device may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer.

The semiconductor device according to this embodiment may be a light emitting device. The light emitting device emits light by recombination of electrons and holes, and the wavelength of the light is determined by the energy band gap inherent to the material. Thus, the light emitted may vary depending on the composition of the material.

(Embodiment 1)

1 is a cross-sectional view of a semiconductor device package 200 according to the first embodiment.

The semiconductor device package 200 according to the first embodiment includes a substrate 205, a first electrode unit 210, a second electrode unit 220, a semiconductor device 100, first and second wires 215 and 225 A first transparent bonding layer 240, and a first diffusion portion 250. The first transparent bonding layer 240 may be formed of a transparent conductive material.

Hereinafter, the semiconductor device package according to the first embodiment will be described in detail with reference to FIG.

<Substrate, Electrode Part>

One of the technical problems of the embodiments is to provide a semiconductor device package and an optical assembly having excellent heat dissipation characteristics while providing high output light.

In embodiments, the substrate 110 may comprise a material having a high thermal conductivity. Accordingly, the substrate 110 may be provided with a material having a good heat dissipation property so as to efficiently discharge the heat generated from the semiconductor device 100 to the outside. The substrate 110 may include an insulating material.

For example, the substrate 110 may include a ceramic material. The substrate 110 may include a low temperature co-fired ceramic (LTCC) or a high temperature co-fired ceramic (HTCC).

In addition, the substrate 110 may include a metal compound. The substrate 110 may include a metal oxide having a thermal conductivity of 140 W / mK or more. For example, the substrate 110 may comprise aluminum nitride (AlN) or alumina (Al ₂ O _3).

As another example, the substrate 110 may include a resin-based insulating material. The substrate 110 may be provided with a silicone resin, an epoxy resin, a thermosetting resin including a plastic material, or a high heat-resistant material.

Meanwhile, according to another embodiment, the substrate 110 may include a conductive material. When the substrate 110 is provided with a conductive material such as a metal, an insulating layer (not shown) may be provided for electrical insulation between the substrate 110 and the semiconductor device 100.

Thus, according to the embodiment, there is a technical effect of providing a semiconductor device package and an optical assembly which can be driven with high output and high voltage, and which is excellent in heat dissipation characteristics.

Next, in the embodiment, the first electrode unit 210 and the second electrode unit 220 may be disposed on the substrate 205.

For example, the first electrode unit 210 includes a first upper electrode 210a disposed on the substrate 205, a first bonding unit 210c disposed below the substrate 205, And a first connection electrode 210b for electrically connecting the upper electrode 210a and the first bonding portion 210c.

The first upper electrode 210a may be electrically connected to the semiconductor device 100. [ For example, the first upper electrode 210a may be electrically connected to the semiconductor device 100 through a first wire 215. [

The second electrode unit 220 may include a second upper electrode 220a disposed on the substrate 205, a second bonding unit 220c disposed below the substrate 205, And a second connection electrode 220b that electrically connects the second bonding portion 220a and the second bonding portion 220c.

The second upper electrode 220a may be electrically connected to the semiconductor device 100. [ For example, the second upper electrode 220a may be electrically connected to the semiconductor device 100 through a second wire 225. [

The first electrode unit 210 and the second electrode unit 220 may be formed of a conductive metal material. For example, the first electrode unit 210 and the second electrode unit 220 may be formed of a metal such as Cu, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Hf, or an alloy of two or more of these materials.

<Semiconductor device>

Next, with reference to Figs. 2 to 4, a description will be given of a semiconductor device 100 that can be employed in a semiconductor device package according to an embodiment.

3 is a first cross-sectional view taken along line I-I 'of the semiconductor device 100 according to the embodiment shown in FIG. 2, and FIG. 4 is a cross- Sectional view taken along line II-II 'of the semiconductor device 100 according to the embodiment shown in FIG.

2 to 4, the semiconductor device 100 according to the embodiment is illustrated as a vertical cavity surface-emitting laser (VCSEL), but the present invention is not limited thereto. 2 to 4, the semiconductor device 100 according to the embodiment is shown for a horizontal VCSEL, but the present invention is not limited thereto.

2, a first electrode 121 and a second electrode 122 are provided on a predetermined light emitting structure 110 (see FIG. 3), and an insulating layer 150 is formed on the light emitting structure 110 .

The first electrode 121 may include a first pad electrode 121a, a first connection electrode 121b and a first circular electrode 121c. The second electrode 122 may include a second pad electrode 122a, a second connection electrode 122b, and a second circular electrode 122c, but the present invention is not limited thereto.

Hereinafter, the technical features of the semiconductor device 100 according to the embodiment will be described in more detail with reference to FIGS. 2 to 4. FIG.

3, a semiconductor device 100 according to an embodiment includes a light emitting structure 110 including a first semiconductor layer 112, an active layer 114, and a second semiconductor layer 116, A second electrode 122 (see FIG. 2) electrically connected to the second semiconductor layer 116, and a second electrode 122 (see FIG. 2) And an insulating layer 150 disposed on the insulating layer 110.

The semiconductor device 100 according to the embodiment may include a first substrate 105, the first substrate 105 may have excellent heat dissipation characteristics, and may be a conductive substrate or a nonconductive substrate. For example, the substrate 105 may be formed of a material selected from the group consisting of copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), copper-tungsten GaAs, ZnO, SiC, and the like), but the present invention is not limited thereto.

The light emitting structure 110 may include a first semiconductor layer 112, an active layer 114, an aperture layer 118, and a second semiconductor layer 116. The light emitting structure 110 may be grown as a plurality of compound semiconductor layers. For example, the light emitting structure 110 may be formed using an electron beam evaporator, a physical vapor deposition (PVD), a chemical vapor deposition (CVD), a plasma laser deposition (PLD), a dual-type thermal evaporator sputtering, , Metal organic chemical vapor deposition (MOCVD), or the like.

The first semiconductor layer 112 may be formed of at least one of Group III-V or Group II-VI compound semiconductors doped with a first conductivity type dopant. For example, the first semiconductor layer 112 may be one of a group including GaAs, GaAl, InP, InAs, GaP. The first semiconductor layer 112 may be formed of a semiconductor having a composition formula of Al _x Ga _{1 -x} As (0 <x <1) / Al _y Ga _{1 -y} As (0 <y <1) May be provided as a material. The first semiconductor layer 112 may be an n-type semiconductor layer doped with an n-type dopant such as a first conductivity type dopant such as Si, Ge, Sn, Se, or Te. The first semiconductor layer 112 may be a DBR (Distributed Bragg Reflector) having a thickness of lambda / 4n by alternately arranging different semiconductor layers. The first semiconductor layer 112 may be a DBR using a dielectric multi-layered film such as TiO ₂ / SiO ₂ .

The active layer 114 may be provided in at least one of Group III-V-VI or Group V-VI compound semiconductors. For example, the active layer 114 may be one of a group including GaAs, GaAl, InP, InAs, GaP. When the active layer 114 is implemented as a multi-well structure, the active layer 114 may include a plurality of alternately arranged well layers and a plurality of barrier layers. The plurality of well layers may be provided as a semiconductor material having a composition formula of In _p Ga _{1 - p} As ( _{0 ? P? 1} ), for example. The barrier layer may be disposed of a semiconductor material having a composition formula of In _q Ga _{1 -q} As (0? _Q <p), for example.

The aperture layer 118 may be disposed on the active layer 114. The aperture layer 118 may include a circular opening at its center. The aperture layer 118 may include a function of restricting current movement so as to concentrate a current to the center of the active layer 114. That is, the aperture layer 118 adjusts the resonance wavelength and adjusts the angle of beam emitted from the active layer 114 in the vertical direction. The aperture layer 118 may comprise an insulating material such as SiO ₂ or Al ₂ O ₃ . In addition, the aperture layer 118 may have a higher band gap than the active layer 114 and the first and second semiconductor layers 112 and 116.

The second semiconductor layer 116 may be formed of at least one of Group III-V or Group II-VI compound semiconductors doped with a dopant of the second conductivity type. For example, the second semiconductor layer 116 may be one of a group including GaAs, GaAl, InP, InAs, GaP. The second semiconductor layer 116 may be formed of a semiconductor having a composition formula of Al _x Ga _{1 -x} As (0 <x <1) / Al _y Ga _{1 -y} As (0 <y <1) May be formed of a material. The second semiconductor layer 116 may be a p-type semiconductor layer having a p-type dopant such as Mg, Zn, Ca, Sr, or Ba. The second semiconductor layer 116 may be a DBR having a thickness of lambda / 4n by alternately arranging different semiconductor layers. The second semiconductor layer 116 may be a DBR using a dielectric multi-layered film such as TiO ₂ / SiO ₂ .

The second semiconductor layer 116 may include a lower reflectivity than the first semiconductor layer 112. For example, the first and second semiconductor layers 112 and 116 can form a resonant cavity in the vertical direction by a reflectance of 90% or more. At this time, light may be emitted to the outside through the light emitting region LE of the second semiconductor layer 116, which is lower than the reflectance of the first semiconductor layer 112.

The first semiconductor layer 112 may be electrically connected to the first electrode 121 and the second semiconductor layer 116 may be electrically connected to the second electrode 122. [

For example, referring to FIGS. 3 and 4, the first semiconductor layer 112 is electrically connected to the first circular electrode 121c through the first connection electrode 121b of the first electrode, 2 semiconductor layer 116 may be electrically connected to the second circular electrode 122c through the second connection electrode 122b of the second electrode.

Next, the semiconductor device 100 of the embodiment may include an insulating layer 150 on the light emitting structure 110. For the example, the insulating layer 150 in the embodiment is SiO _2, SixOy, Al ₂ O _3, TiO _2, such as an oxide or Si ₃ N _4, SixNy, SiOxNy, a single layer or a plurality of layers of a nitride layer, such as AlN .

<Housing, First Diffusion Portion, First Transparent Coupling Layer>

Referring again to FIG. 1, an embodiment may include a housing 230 disposed on the substrate 205 and disposed around the semiconductor device 100, And a first diffusion portion 250 disposed on the region A1. In addition, the embodiment may include a support portion 242 disposed on the second region A2 of the housing 230 and a first translucent bonding layer 240. [

First, the first diffusion portion 250 may be disposed on the semiconductor device 100. The first diffusion unit 250 may be disposed on the housing 230. For example, the first diffusion unit 250 may be disposed on the first area A1 on the upper surface of the housing 230. [

The first diffusion unit 250 may set the angle of view of the beam emitted according to the application field of the semiconductor device package. In addition, the first diffusion unit 250 may set the intensity of light emitted according to the application field of the semiconductor device package.

Accordingly, the first diffusion unit 250 may function to expand the FOV of the beam of light emitted from the semiconductor device 100. For this, the first diffusion unit 250 may include, for example, a microlens, a concavo-convex pattern, or the like.

Also, the first diffusion unit 250 may include an anti-reflective function. For example, the first diffusion portion 250 may include an anti-reflection layer (not shown) disposed on one surface of the semiconductor element 100 facing the semiconductor element 100. For example, the first diffusion portion 250 may include an anti-reflection layer disposed on a lower surface facing the semiconductor device 100. Thus, the non-reflective layer can prevent light incident from the semiconductor device 100 from being reflected on the surface of the first diffusion portion 250 and transmit the reflected light, thereby improving light loss due to reflection.

The non-reflective layer may be formed of, for example, an anti-reflective coating film and attached to the surface of the first diffusion portion 250. Further, the non-reflective layer may be formed on the surface of the first diffusion portion 250 through spin coating or spray coating. For example, the anti-reflection layer may be formed as a single layer or a multilayer including at least one of the group including TiO ₂ , SiO ₂ , Al ₂ O ₃ , Ta ₂ O ₃ , ZrO ₂ , and MgF ₂ .

The housing 230 may include an insulating material having excellent bonding strength with the substrate 205. For example, the housing 230 may include a ceramic material such as a low temperature co-fired ceramic (LTCC) or a high temperature co-fired ceramic (HTCC). In addition, the housing 230 may include a resin-based insulating material. For example, the housing 230 may be provided with a silicone resin, an epoxy resin, a thermosetting resin including a plastic material, or a high heat-resistant material. In addition, the housing 230 may include a metal compound. For example, the housing 230 may include an aluminum nitride (AlN) or alumina (Al ₂ O _3).

The semiconductor device package according to the embodiment may include an adhesive layer 252 provided between the first diffusion portion 250 and the housing 230. By way of example, the adhesive layer 252 may comprise an organic material. The adhesive layer 252 may include an epoxy-based resin. In addition, the adhesive layer 252 may include a silicone-based resin.

The first diffusion portion 250 and the housing 230 can be stably fixed by the adhesive layer 252. However, in an extreme environment such as long use of the semiconductor device package or vibration, The possibility of being detached from the housing 230 can also be raised. At this time, when the first diffusion part 250 is detached from the housing 230, strong light emitted from the semiconductor device 100 is directly irradiated to the outside without passing through the first diffusion part 250 .

However, when the semiconductor device package according to the embodiment is used to detect human motion, strong light without passing through the first diffusion portion 250 can be directly irradiated to a human eye. For example, when strong light emitted from the semiconductor device 100 is directly irradiated to human eyes, there is a risk that a person may be blinded.

Therefore, it is required to study a reliable method of preventing the first diffusion unit 250 from being separated from the housing 230. Also, under extreme circumstances, under the probabilistic assumption that the first diffusion portion 250 may be separated from the housing 230, a strong light emitted from the semiconductor element 100 may cause a person It is requested to provide stable measures that can not be hurt.

Accordingly, one of the technical problems of the embodiments is to provide a semiconductor device package and an optical assembly that are excellent in mechanical stability and can safely protect an element disposed therein from an external impact.

In addition, one of the technical problems of the embodiments is to provide a semiconductor device package and an optical assembly that can prevent moisture penetration into the interior while providing light of high output.

The first translucent bonding layer 240 may include a first translucent bonding layer 240 disposed on a second region A2 of the upper surface of the housing 230 so that the first translucent bonding layer 240 applies a lateral bonding force F1 There is a technical effect that it is possible to provide a semiconductor device package and an optical assembly capable of enhancing mechanical stability and reliability of the diffusion portion 250 and safely protecting a semiconductor element disposed therein from an external impact.

The first translucent bonding layer 240 is excellent in bonding strength and may have a translucent function. For example, the first translucent bonding layer 240 may include a resin-based material. For example, the first translucent bonding layer 240 may be a silicone type resin, an epoxy type resin, a thermosetting resin including a plastic material, or a high heat resistant material.

The first transmissive bonding layer 240 contacts the side surface of the first diffusion portion 250 to apply the side bonding force F1 to the diffusion portion 250 to improve the transmittance of the first diffusion portion 250. [ There is a technical effect that can be firmly fixed.

The embodiment may also include a support portion 242 on the second area A2 on the upper surface of the housing 230 so that the first translucent bonding layer 240 can be firmly supported on the housing 230. [ have. For example, the support portion 242 may be formed on the second region A2 by a solder resist so as to support the first translucent bonding layer 240 on the housing 230. For example, the support portion 242 may be formed of a photo imageable solder resist (PSR), but is not limited thereto.

    The horizontal width of the second area A2 is greater than the horizontal width of the first area A1 to increase the supporting force of the first translucent bonding layer 240. In addition, There is a technical effect to provide a semiconductor device package and an optical assembly that can prevent moisture penetration into the interior while providing high output light by increasing the path.

(Second Embodiment)

5 is a cross-sectional view of a semiconductor device package 202 according to the second embodiment.

The second embodiment can employ the technical features of the first embodiment, and the following description will focus on the main features of the second embodiment.

The semiconductor device package 202 according to the second embodiment includes the groove H in the first region of the upper surface of the housing 230 and the first diffusion portion 250 further includes the lower protrusion 255, The lower protrusion 255 is disposed in the groove H of the first region on the upper surface of the housing 230 to improve the coupling force between the first diffusion portion 250 and the housing 230, ) Can be increased.

The lower protrusion 255 may be formed of the same material as the first diffusion unit 250, but the present invention is not limited thereto.

In addition, according to the embodiment, it is possible to block the penetration of moisture by forming the groove H of the first area on the upper surface of the housing 230, and even if moisture is penetrated, the penetration path can be expanded, There is a technical effect.

According to the embodiment, a predetermined second adhesive layer (not shown) is formed in the groove H of the first area on the upper surface of the housing 230 to improve the bonding force.

The first transmissive bonding layer 240 contacts the side surface of the first diffusion portion 250 to apply the side bonding force F1 to the diffusion portion 250 to improve the transmittance of the first diffusion portion 250. [ A semiconductor device capable of preventing moisture penetration into the inside while providing light of high output by blocking moisture penetrated by forming the groove H of the first area on the upper surface of the housing 230, There are complex technical effects that can provide device packages and optical assemblies.

(Third Embodiment)

6 is a cross-sectional view of a semiconductor device package 200 according to the third embodiment.

The third embodiment can adopt the technical features of the first embodiment or the second embodiment, and the main features of the third embodiment will be described below.

The semiconductor device package 200 according to the third embodiment includes a substrate 205, a semiconductor device 100 on the substrate 205, and a semiconductor device 200 disposed on the substrate 205, And a second diffusion portion 250a disposed on the housing 230. The second diffusion portion 250a is spaced apart from the semiconductor element 100 and is disposed on the housing 230. [

The second diffusion portion 250a is disposed on the first region of the upper surface of the housing 230 and is disposed on the second region of the upper surface of the housing 230 and the second transmissive coupling layer 240a , And the second diffusion unit 250a may include a first inclined plane S1.

According to the third embodiment, the second diffusion portion 250a includes the first inclined surface S1 so that not only the side supporting force F1 but also the upper surface supporting force F2 ), It is possible to provide a semiconductor device package and an optical assembly which are superior in mechanical stability and reliability and can safely protect an element disposed therein from an external impact.

For example, in the embodiment, the width of the upper region may be smaller than the width of the lower region of the second diffusion unit 250a, and accordingly, the second diffusion unit 250a may have a width 1 inclined surface S1.

The second transmissive coupling layer 240a may include a second inclined surface S2 corresponding to the first inclined surface S1 of the second diffusion portion 250a. The width of the upper region of the second translucent bonding layer 240a may be greater than the width of the lower region.

The second transmissive bonding layer 240a is bonded to the second diffusion portion 250a by the upper surface supporting force F2 applied on the upper side together with the side supporting force F1 applied on the side surface of the second diffusion portion 250a There is a technical effect that it is possible to provide a semiconductor device package and an optical assembly having excellent mechanical stability and reliability as being very firmly supported.

(Manufacture process)

Hereinafter, a manufacturing process of the semiconductor device package according to the embodiment will be described with reference to FIGS. 7 to 11. FIG.

First, the first electrode unit 210 and the second electrode unit 220 may be formed on the substrate 205 as shown in FIG. The first electrode unit 210 includes a first upper electrode 210a disposed on the substrate 205, a first bonding unit 210c disposed under the substrate 205, a second bonding unit 210b disposed on the first upper electrode 210a And a first connection electrode 210b electrically connecting the first bonding portion 210c and the first bonding portion 210c.

The second electrode unit 220 may include a second upper electrode 220a disposed on the substrate 205, a second bonding unit 220c disposed below the substrate 205, And a second connection electrode 220b that electrically connects the second bonding portion 220a and the second bonding portion 220c.

Next, a housing 230 may be formed on the substrate 205. The substrate 110 and the housing 230 may be fabricated by a wafer level package process.

Next, the semiconductor device 100 is disposed on the substrate 205, and the first upper electrode 210a and the second upper electrode 220a (not shown) are connected to each other through the first wire 215 and the second wire 225, Respectively.

8, a first adhesive layer 252 may be disposed on a first region of the upper surface of the housing 230, and a support portion 242 may be disposed on a second region of the upper surface of the housing 230 .

The adhesive layer 252 may include an organic material. The adhesive layer 252 may include an epoxy-based resin. In addition, the adhesive layer 252 may include a silicone-based resin.

The embodiment may include a support portion 242 on a second area of the upper surface of the housing 230 so that the first translucent bonding layer 240 can be firmly supported on the housing 230. For example, the support portion 242 may be formed on the second region A2 by a solder resist so as to support the first translucent bonding layer 240 on the housing 230. For example, the support portion 242 may be formed of a photo imageable solder resist (PSR), but is not limited thereto.

Next, the first diffusion portion 250 may be coupled to the first adhesive layer 252. The housing 230 may include an insulating material having excellent bonding strength with the substrate 205. For example, the housing 230 may include a ceramic material such as a low temperature co-fired ceramic (LTCC) or a high temperature co-fired ceramic (HTCC). In addition, the housing 230 may include a resin-based insulating material. For example, the housing 230 may be provided with a silicone resin, an epoxy resin, a thermosetting resin including a plastic material, or a high heat-resistant material. In addition, the housing 230 may include a metal compound. For example, the housing 230 may include an aluminum nitride (AlN) or alumina (Al ₂ O _3).

Next, as shown in FIG. 9, a first light-transmitting bonding layer 240 may be formed on a second region of the housing 230. The first translucent bonding layer 240 is excellent in bonding strength and may have a translucent function. For example, the first translucent bonding layer 240 may include a resin-based material. For example, the first translucent bonding layer 240 may be a silicone type resin, an epoxy type resin, a thermosetting resin including a plastic material, or a high heat resistant material.

The first transmissive bonding layer 240 contacts the side surface of the first diffusion portion 250 to apply a lateral coupling force to the diffusion portion 250 to securely fix the first diffusion portion 250 There is a technical effect that can be.

Next, the semiconductor device package 200 according to the embodiment can be manufactured as shown in Fig. 10 by a cutting method by dicing (D) or the like as shown in Fig.

As described above, according to the embodiment, the first diffusion portion 250 may be attached to the housing 230 by a wafer level package process.

That is, after the semiconductor element 100 and the housing 230 are attached to the substrate 205 at a wafer level and the first diffusion portion 250 is attached to the housing 230, A plurality of semiconductor device packages having the semiconductor device 100, the housing 230, and the first diffusion portion 250 coupled to the substrate 205 may be provided.

When the semiconductor device package 200 including the substrate 205, the housing 230 and the first diffusion portion 250 is manufactured by the wafer level package process, The outer surface of the housing 230, and the outer surface of the first diffusion portion 250 may be disposed on the same plane.

That is, there is no step between the outer surface of the substrate 205, the outer surface of the housing 230, and the outer surface of the first diffusion portion 250. According to the embodiment, since there is no step between the outer surface of the substrate 205, the outer surface of the housing 230, and the outer surface of the first diffusion portion 250, And defects in which damage is caused by external friction or the like can be fundamentally prevented.

According to another embodiment, the substrate 205 and the housing 230 are manufactured in a wafer level package process, and the first diffusion unit 250 is attached to the housing 230 in a separate separate process .

As described above, the semiconductor device package according to an embodiment may include a vertical cavity surface emitting laser semiconductor device (VCSEL).

Vertical cavity surface emitting laser semiconductor devices can convert electrical signals into optical signals. Vertical Cavity Surface Emitting Laser semiconductor devices, unlike conventional side emitting lasers (LD), can emit a circular laser beam vertically at the substrate surface. Accordingly, the vertical cavity surface emitting laser semiconductor device is easy to connect to a light receiving element, an optical fiber, and the like, and has a merit that parallel signal processing can be performed because the two-dimensional array is easy. In addition, the vertical cavity surface emitting laser semiconductor device has advantages of miniaturization of devices and high density integration, low power consumption, simple manufacturing process, and good heat resistance.

Application of vertical cavity surface emitting laser semiconductor devices can be applied to laser printer, laser mouse, DVI, HDMI, high speed PCB, home network and the like in digital media sector. In addition, the vertical cavity surface emitting laser semiconductor device can be applied to automotive fields such as multimedia networks and safety sensors in automobiles. Vertical cavity surface emitting laser semiconductor devices can also be applied to information communication fields such as Gigabit Ethernet, SAN, SONET and VSR. The vertical cavity surface emitting laser semiconductor device can also be applied to sensor fields such as encoders and gas sensors. In addition, the vertical cavity surface emitting laser semiconductor device can be applied to medical and biotechnological fields such as blood glucose meters and skin care lasers.

Meanwhile, the semiconductor device package according to the embodiment described above can be applied to a proximity sensor, an autofocus device, and the like. For example, the autofocusing apparatus according to the embodiment may include a light emitting unit that emits light and a light receiving unit that receives light. At least one of the semiconductor device packages described with reference to Figs. 1 to 11 may be applied as an example of the light emitting portion. A photodiode may be applied as an example of the light receiving portion. The light-receiving unit may receive light reflected from the object by the light emitted from the light-emitting unit.

The autofocus device can be applied to various devices such as a mobile terminal, a camera, a vehicle sensor, and an optical communication device. The autofocus device can be applied to various fields for multi-position detection for detecting the position of a subject.

(Optical assembly)

12 illustrates an optical assembly including a semiconductor device package according to an embodiment, for example,

And is a perspective view of a mobile terminal 1500 to which an autofocus device is applied.

As shown in FIG. 12, the mobile terminal 1500 of the embodiment may include a camera module 1520, a flash module 1530, and an autofocus device 1510 provided on the rear side. Here, the auto-focus device 1510 may include one of the semiconductor device packages according to the embodiment described with reference to FIGS. 1 to 11 as a light emitting portion.

The flash module 1530 may include a light emitting element for emitting light. The flash module 1530 can be operated by the camera operation of the mobile terminal or the user's control. The camera module 1520 may include an image photographing function and an auto focus function. For example, the camera module 1520 may include an auto-focus function using an image.

The autofocusing apparatus 1510 may include an autofocusing function using a laser. The autofocusing device 1510 may be used mainly in a close or dark environment of 10 m or less, for example, under conditions where the autofocus function using the image of the camera module 1520 is deteriorated. The autofocusing apparatus 1510 may include a light emitting portion including a vertical cavity surface emitting laser (VCSEL) semiconductor element, and a light receiving portion that converts light energy, such as a photodiode, into electrical energy.

The features, structures, effects, and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It can be seen that the modification and application of branches are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

The semiconductor device package 200, the substrate 205, the first electrode unit 210, the second electrode unit 220,
The semiconductor device 100, the first and second wires 215 and 225, the housing 230, the support portion 242,
The first light-transmitting bonding layer 240, the first diffusion portion 250,

Claims (10)

Board;
A semiconductor element on the substrate;
A housing disposed on the substrate, the housing disposed around the semiconductor element;
And a first diffusion part spaced upward from the semiconductor element and disposed on the housing,
Wherein the diffusion portion is disposed on a first region of the upper surface of the housing,
And a first translucent bonding layer disposed on a second region of the upper surface of the housing. The method according to claim 1,
The first light-
And a side of the first diffusion portion. The method according to claim 1,
Further comprising an adhesive layer between the first diffusion portion and a first region of the upper surface of the housing. The method according to claim 1,
And a support portion on a second region of the upper surface of the housing. The method according to claim 1,
And a groove (H) in a first region of the upper surface of the housing,
Wherein the first diffusion portion further includes a lower protrusion,
And the lower protrusion is disposed in a groove (H) of a first region of the upper surface of the housing. Board;
A semiconductor element on the substrate;
A housing disposed on the substrate, the housing disposed around the semiconductor element;
And a second diffusion portion spaced apart from the semiconductor element and disposed on the housing,
Wherein the second diffusion portion is disposed on a first region of the upper surface of the housing,
And a second translucent bonding layer disposed on a second region of the upper surface of the housing,
And the second diffusion portion includes a first inclined surface. The method according to claim 6,
And the width of the upper region of the second diffusion portion is smaller than the width of the lower region thereof. The method according to claim 6,
The second translucent bonding layer
And a second inclined surface corresponding to the first inclined surface of the second diffusion portion. The method according to claim 6,
The width of the upper region of the second light-transmitting bonding layer is larger than the width of the lower region thereof. An optical assembly comprising a semiconductor device package according to any one of claims 1 to 9.

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