KR20160083821A - Semiconductor light emitting device and method of manufacturing the same - Google Patents

Abstract

The present disclosure relates to a semiconductor light emitting device having a first conductive portion, a second conductive portion, and an insulating portion interposed between the first conductive portion and the second conductive portion, wherein the first conductive portion, the insulating portion, A power supply substrate having a plate shape and powered from the outside to the first conductive portion and the second conductive portion; A semiconductor light emitting chip having a semiconductor light emitting portion which generates light by recombination of electrons and holes and at least one electrode which is formed in the semiconductor light emitting portion and which is placed on the power supply transmitting substrate; A heat sink positioned below the power-transmitting substrate and receiving heat from the power-transmitting substrate; And a pressing member for pressing and fixing the power supply substrate and the heat sink to each other.

Description

Technical Field [0001] The present invention relates to a semiconductor light emitting device and a method of manufacturing the same,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates generally to a semiconductor light emitting device and a manufacturing method thereof, and more particularly to a semiconductor light emitting device having improved heat radiation efficiency and a manufacturing method thereof.

Herein, the background art relating to the present disclosure is provided, and these are not necessarily meant to be known arts.

A resin-based (for example, FR-4) substrate has been used as a substrate on which an LED (light emitting diode) is mounted. Since 2000, since LEDs have increased in brightness and efficiency, and in particular, blue LEDs have been remarkably improved, heat radiation measures for LED mounted products have become a big problem. For high power LEDs, for example, about 60-70% of the energy supplied is converted to light energy and the remainder is converted to heat energy and emitted. The deterioration of the phosphor due to heat is a major problem in a device such as a high-power white LED. As a result, the color temperature (CCT) and the luminance change with time. Accordingly, a highly heat-dissipative substrate including a metal base substrate having excellent price / performance ratio is attracting attention as a substrate for power LED, and application to backlight of illumination and display is increasing.

A printed circuit board (PCB) is a substrate in which a circuit pattern is formed by pressing a copper foil on one or both sides of an insulation layer, and unnecessary portions of the copper foil are removed by etching. In general resin PCB, phenol resin or epoxy resin is used as an insulating layer. In the case of a metal PCB, an insulating layer and a copper foil pattern layer are provided on a metal plate (for example, Al) having good thermal conductivity. In the case of metal PCB, materials such as T-PLUG and prepreg which have good thermal conductivity may be used as an insulating layer. As the material of the metal PCB, an aluminum plate, a copper plate silicon steel plate, a galvanized steel plate and the like are used.

FIG. 1 is a diagram showing an example of a light emitting device disclosed in U.S. Patent Application Publication No. 2014/0021495. The light emitting device includes a ceramic package 12 having a plurality of cavities 14 formed thereon, And a conductive portion 18 to which the LED chip 16 is bonded and the conductive portion 18 is electrically connected to the cavity 14 (14), the encapsulation material 34 filling the cavity 14, the reflective surface 17, And the solder pads 22 are formed on the rear surface of the ceramic package 12. The electrode pads 20 and the pads 22 for solder are connected to the ceramic package 12 Are connected to one another by conductive through vias (24).

2 shows another example of the light emitting device disclosed in U.S. Patent Application Publication No. 2014/0021495. The light emitting device includes a heat conducting substrate 52 such as a metal core printed circuit board (MCPCB), an LED package array 54, An open metal housing 56, and a translucent window 58, and a phosphor layer 60. The thermally conductive substrate 52 includes a thermally conductive base 62 (e.g., Al), an insulating layer 64 that is repeatedly laminated with an electrically insulating and thermally conductive material, and a conductive trace 66 (e.g., Cu). The insulating layer 64 is formed to be very thin for heat transfer from the LED package array 54 to the heat conduction base 62. The conductive track 66 includes a mounting pad 74, contact pads 70,

3 shows an example of a light emitting device disclosed in U.S. Patent Application Publication No. 2013/0187571. The light emitting device includes an LED 220, a metal base 228, an insulating layer 227, a conductive layer 224, An ink layer 226, and poles 225.

In the case of the conventional metal PCB, if the thickness of the insulating layer is increased, the withstand voltage increases but the heat radiation efficiency is lowered. On the other hand, as the thickness of the copper foil pattern provided on the insulating layer for improving the thermal efficiency is increased, the heat spreads more rapidly in the horizontal direction, which is advantageous for heat radiation. However, in order to form a circuit by patterning the copper foil, there is a great limitation in increasing the thickness of the copper film.

FIG. 4 is a diagram showing a conventional semiconductor light emitting device (Flip Chip). The semiconductor light emitting device includes a substrate 100, a first semiconductor layer 300 having a first conductivity, An active layer 400 for generating light through recombination of holes and a second semiconductor layer 500 having a second conductivity different from the first conductivity are sequentially deposited on the substrate 100, An electrode film 901, an electrode film 902 and an electrode film 903 are formed in three layers. An electrode 800 functioning as a bonding pad is formed on the exposed first semiconductor layer 300 have.

5 is a view showing an example of a semiconductor light emitting device shown in U.S. Patent No. 6,650,044, wherein the semiconductor light emitting device is formed on a substrate 100 and a substrate 100 in the form of a flip chip, An active layer 400 for generating light through recombination of electrons and holes and a second semiconductor layer 500 having a second conductivity different from the first conductivity are sequentially deposited on the first semiconductor layer 300, A reflective film 950 for reflecting light is formed on the substrate 100 side and an electrode 800 functioning as a bonding pad is formed on the exposed first semiconductor layer 300. The substrate 100, An encapsulant 1000 is formed to surround the semiconductor layers 300, 400 and 500. The reflective layer 950 may be formed of a metal layer as shown in FIG. 4, but may be an insulator reflective layer such as a DBR (Distributed Bragg Reflector) made of SiO ₂ / TiO ₂ , as shown in FIG. The semiconductor light emitting device is mounted on a PCB (Printed Circuit Board) 1200 provided with electric wiring 820, 960 through conductive adhesive 830, 970. The encapsulant 1000 mainly contains a phosphor.

6 is a view showing an example of a method of manufacturing a semiconductor light emitting device shown in U.S. Patent No. 6,650,044. First, a semiconductor light emitting device chip 20 is placed on a mounting surface 10 made of a film or a plate. Next, the stencil mask 80 provided with the opening 81 is placed on the mounting surface 10 so that the semiconductor light emitting device chip 20 is exposed. Next, the sealing agent is put into the opening 81, and after the sealing agent is cured for a certain period of time, the stencil mask 80 is separated from the mounting surface 10. The stencil mask 80 is mainly made of a metal material.

This will be described later in the Specification for Implementation of the Invention.

SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).

According to one aspect of the present disclosure, there is provided a semiconductor light emitting device including a first conductive portion, a second conductive portion, and an insulating layer interposed between the first conductive portion and the second conductive portion, A power supply substrate having a first conductive portion, an insulating portion, and a second conductive portion in the form of a plate, the power being applied to the first conductive portion and the second conductive portion from the outside; A semiconductor light emitting chip having a semiconductor light emitting portion which generates light by recombination of electrons and holes and at least one electrode which is formed in the semiconductor light emitting portion and which is placed on the power supply transmitting substrate; A heat sink positioned below the power-transmitting substrate and receiving heat from the power-transmitting substrate; And a pressing member for pressing and fixing the power supply substrate and the heat sink to each other.

This will be described later in the Specification for Implementation of the Invention.

1 is a view showing an example of a light emitting device disclosed in U.S. Patent Application Publication No. 2014/0021495,
2 is a view showing another example of the light emitting device disclosed in U.S. Patent Application Publication No. 2014/0021495,
3 is a view showing an example of a light emitting device disclosed in U.S. Patent Application Publication No. 2013/0187571,
4 is a view showing an example of a conventional semiconductor light emitting device (Flip Chip)
5 is a view showing an example of a semiconductor light emitting device shown in U.S. Patent No. 6,650,044,
6 is a view showing an example of a method of manufacturing a semiconductor light emitting device shown in U.S. Patent No. 6,650,044,
7 is a view for explaining one example of a semiconductor light emitting device according to the present disclosure,
8 is a view for explaining other examples of the semiconductor light emitting device according to the present disclosure,
9 is a view for explaining examples of a semiconductor light emitting chip of a semiconductor light emitting device according to the present disclosure,
10 is a view for explaining still another example of the semiconductor light emitting device according to the present disclosure,
11 is a view for explaining still another example of the semiconductor light emitting device according to the present disclosure,
12 is a view for explaining still another example of the semiconductor light emitting device according to the present disclosure,
13 is a view for explaining still another example of the semiconductor light emitting device according to the present disclosure,
14 is a view for explaining still another example of the semiconductor light emitting device according to the present disclosure,
15 is a view for explaining still another example of the semiconductor light emitting device according to the present disclosure,
16 to 18 are views for explaining an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure,
19 is a view for explaining another example of a manufacturing method of a semiconductor light emitting device according to the present disclosure,
FIGS. 20 and 21 are views for explaining another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure; FIGS.
FIGS. 22 and 23 are views for explaining another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure; FIGS.

The present disclosure will now be described in detail with reference to the accompanying drawings.

7 is a view for explaining one example of a semiconductor light emitting device according to the present disclosure. The semiconductor light emitting device includes a power supply transfer substrate 201, a semiconductor light emitting chip 101, and a heat dissipation unit 1000 (heat dissipation layer) .

The power supply substrate 201 has a first conductive portion 241, a second conductive portion 242 and an insulating portion 243 interposed between the first conductive portion 241 and the second conductive portion 242 The first conductive portion 241, the insulating portion 243, and the second conductive portion 242 form a plate shape. The semiconductor light emitting chip 101 has a semiconductor light emitting portion 105 that generates light by recombination of electrons and holes, and at least one electrode 80, 70 that is formed in the semiconductor light emitting portion. In this example, the semiconductor light emitting chip 101 is placed on the power supply substrate 201 so that at least one electrode 80, 70 is bonded to one of the first conductive portion 241 and the second conductive portion 242. When power of different polarity is applied to the first conductive portion 241 and the second conductive portion 242 from the outside, the semiconductor light emitting chip 101 emits light. The heat dissipation unit 1000 is located below the power supply substrate 201 and receives heat generated during the light emission process of the semiconductor light emitting chip 101 through the power supply substrate 201 to dissipate heat to the outside.

In this disclosure, the semiconductor light emitting chip 101 can be used as both a flip chip, a letter chip (see FIG. 15B), and a vertical chip (see FIG. 15B). The semiconductor light emitting chip 101 shown in FIG. 7 is a flip chip. The at least one electrode 80 includes a first electrode 80 formed on one side of the semiconductor light emitting portion 105, . The first electrode 80 is bonded to the first conductive portion 241 and the second electrode 70 is bonded to the second conductive portion 242. As shown in FIG. 7A, the semiconductor light emitting chip 101 is directly mounted on the power supply substrate 201 in the SMD type, or the semiconductor light emitting chip 101 is provided with the sealing material 180 around the semiconductor light emitting chip 101, as shown in FIGS. 7B and 7C LEDs can be mounted in SMD type.

In this example, the first conductive portion 241, the second conductive portion 242, and the insulating portion 243 are not patterned by etching a metal layer such as a copper foil. For example, a conductive layer (e.g., Al , Cu, etc.) and an insulating material layer (e.g., resin) are repeatedly laminated and cut into a plate shape (see Fig. 16). The conductive layer is cut to become the first conductive portion 241 and the second conductive portion 242 and the insulating material layer is cut to become the insulating portion 243. [ The thicknesses of the first conductive portion 241 and the second conductive portion 242 formed as described above can be determined much more freely than a copper foil pattern in which a resin PCB or a metal PCB such as FR-4 is bonded to an LED electrode.

In the example shown in FIG. 7B, the power-transmitting substrate 201 has a plate shape in which the first conductive portion 241, the insulating portion 243, and the second conductive portion 242 are repeated, 101 are electrically connected in series, as shown in FIG. 7B by the first conductive portion 241 and the second conductive portion 242, or in parallel, as shown in FIG. 15A.

The heat dissipation unit 1000 is generally made of metal, but does not exclude the example made of a non-conductive material. When the heat dissipation unit 1000 is non-conductive, the lower surface of the power supply substrate 201 may be directly bonded to the heat dissipation unit 1000, or may be bonded using an adhesive, a paste, a heat dissipation tape, or an insulating layer. Alternatively, it may be fixed to the heat dissipating unit 1000 using a screw 1400 (see FIG. 11).

The heat dissipation unit 1000 may be a metal plate such as Al or Cu and the first and second conductive units 241 and 242 may not be blown by the heat dissipation unit 1000, The power transmission substrate 201 is formed with an oxide layer 271 as an insulating layer on the lower surfaces of the first conductive portion 241 and the second conductive portion 242. [ The oxide film 271 may be formed by an anodizing process after forming the aluminum plate. As shown in FIG. 7A, the oxide film 271 may be directly bonded to the heat dissipation unit 1000, screwed or adhered using the adhesive layer 1100, as shown in FIG. 7B. At this time, the adhesive layer 1100 may be conductive or non-conductive, and it is preferable to use a non-conductive adhesive layer 1100 for improving insulation. As another example, the formation of the oxide film 271 may be omitted, and the power-transmitting substrate 201 and the heat dissipation unit 1000 may be bonded to each other using a non-conductive adhesive layer.

In such a semiconductor light emitting device, the power-transmitting substrate 201 functions as a kind of circuit substrate that supplies power to the semiconductor light emitting chip 101, and can be used as a COB type substrate. Since the heat is transferred from the power supply substrate 201 to the heat dissipation unit 1000 in the vertical direction through the oxide film 271, the adhesive layer 1100 and the insulation layer 1200, the heat radiation efficiency is basically affected by these layers . In the present disclosure, the power-transmitting substrate 201 may be made thicker than the copper foil in conventional resin PCB or metal PCB, and the first conductive portion 241 and the second conductive portion 242 may be formed on the power- 201), the power-transmitting substrate 110 itself has a very good thermal diffusivity (see the arrows in FIG. 8) and heat radiation efficiency. Therefore, it has a structure which is very advantageous for improving the heat dissipation performance compared with the conventional metal PCB.

In the example shown in FIG. 7C, the semiconductor light emitting device includes a light emitting diode (LED), a power supply transfer substrate 201, a heat dissipation unit 1000, and an insulating layer 1200. The light emitting diode includes a semiconductor light emitting chip 101, a wall 170, and an encapsulant 180. The wall 170 may be comprised of silicon (e.g., highly reflective silicon) or a resin (e.g., white resin), and the encapsulant 180 may comprise a phosphor.

The insulating layer 1200 is interposed between the power supply substrate 201 and the heat dissipation unit 1000. The insulating layer 1200 can be further used for improving the insulation even when the oxide film 207 is formed on the lower surface of the power supply substrate 201. However, when the oxide film 207 due to anodization is not formed or is insufficient : Cu), the insulating layer 1200 is preferably used. The upper surface of the first conductive portion 241, the second conductive portion 242 and the insulating portion 243 are exposed to the semiconductor light emitting chip 101 side and the first conductive portion 241, the second conductive portion 242, The lower surface of the insulating portion 243 is in contact with the insulating layer 1200. A silver plating layer may be added to the top and bottom surfaces of the first conductive portion 241 and the second conductive portion 242. The insulating layer 1200 may be a heat-radiating tape (e.g., polyimide tape, PTFE tape, silicone tape, etc.), a high heat dissipation composite material (e.g., prepreg), PSR, insulating coating, .

Such a semiconductor light emitting element is supplied with power from an alternating current or a direct current power source. The AC power source may have a peak voltage of several hundred volts, and if the withstand voltage is destroyed, the semiconductor light emitting chip may be damaged, the insulating material may be destroyed, or the heat dissipating part may be damaged. Therefore, the semiconductor light emitting element needs to have a much higher withstanding voltage than such a peak voltage. When the peak voltage reaches 400V to 500V, the withstand voltage is required to be higher than twice, and it is required to be able to withstand about 1KV to 3KV. An oxide film by anodizing can increase or decrease the thickness, but it is insufficient to provide a sufficient withstand voltage when formed to a thickness of approximately 20 to 30 占 퐉.

 In the above-mentioned general metal PCB, the copper foil layer has a thickness of about 70 mu m in the metal base, the insulating layer, and the patterned copper foil layer structure, and the metal base has a thickness of about 70 to 100 mu m. As the insulating layer, a prepreg can be used. The thicker the insulating layer, the higher the withstand voltage, but the lower the heat radiation efficiency, so there is a limit to increase the thickness of the insulating layer. In addition, there is an attempt to make an insulating layer with a highly heat-dissipating material, but there is also a limit to increase in the thickness of the insulating layer to improve the withstand voltage. Further, in heat transfer, heat spreads much faster in the horizontal direction through the copper foil pattern than in the vertical direction through the insulating layer, so that the thicker the copper foil pattern, the higher the efficiency of spreading the heat. However, in the conventional metal PCB, there is a great limitation in increasing the thickness of the copper foil in patterning the copper foil. In addition, there is a limit to narrowing the interval between the semiconductor light emitting chips due to the heat dissipation problem.

On the other hand, in the semiconductor light emitting device according to the present embodiment, the power supply substrate 201 does not require a patterning step such as a copper foil pattern as described above, and a conductive layer (e.g., Al, Cu, When the laminate is cut into a plate shape, the thickness can be adjusted freely (see Fig. 16). For example, the thickness T1 of the first conductive portion 241 and the second conductive portion 242 is, for example, about 400 μm to 500 μm. Therefore, the heat transfer is greatly improved in the horizontal direction as compared with the conventional metal PCB (see arrows in FIG. 8A). Since the material having good thermal conductivity such as the first conductive portion 241 and the second conductive portion 242 occupies most of the area of the power-transmitting substrate 201, the power-transmitting substrate 201 itself is very good And the contact area with the insulating layer 1200 is wide, and the vertical heat radiation efficiency is also improved.

Due to this advantage, in this example, a margin is provided for adjusting the thickness T2 of the insulating layer 1200 for improving withstand voltage. For example, the thickness T2 of the insulating layer in the semiconductor light emitting device according to the present example can be set to 10 mu m to 200 mu m, and it can have a withstand voltage of 1 KV or more. Further, it is possible to narrow the interval of the semiconductor light emitting chips 101. [ In the case of the conventional metal PCB, the copper foil tends to be damaged when an instantaneous electric shock or an electric voltage breakdown occurs. In this example, however, since the power supply transfer board 201 has a sufficient thickness and area, have. Therefore, the semiconductor light emitting device according to this example has a very good structure for improving the withstand voltage characteristics.

8 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure. The power supply transfer substrate 201 includes a first conductive portion 241, an insulating portion 243, and a second conductive portion 242 And a plurality of semiconductor light emitting chips 101 are connected in series and in parallel by a first conductive portion 241 and a second conductive portion 242. [ Power is externally applied to the first conductive portion 241 and the second conductive portion 242. For this, the wires 961 and 965 may be used as shown in FIG. 8A. For example, a wire 961 for applying a power of a first polarity is soldered to the first conductive portion 241 at one end of the series connection, and a second polarity is applied to the second conductive portion 242 at the other end of the series connection, A wire 965 for applying a power supply of the wire 965 is soldered.

8B, the shape of the first conductive portion 241 and the second conductive portion 242 of the power-transmitting substrate 201 may be changed so that the first conductive portion 241 and the second conductive portion 242 may be formed as shown in FIG. The connecting portions 246 and 248 may be formed so as to protrude from the edge of the connecting portion 242 and the connecting portions 246 and 248 may be inserted into the connector 1004. At this time, the connector 1004 may be provided on the heat dissipation unit 1000 or may be provided on another external member. Further, the connector and the conductive portions 241 and 242 of the power-transmitting substrate 201 may be directly soldered without changing the shape of the power-transmitting substrate 201. [

FIG. 9 is a view for explaining examples of the semiconductor light emitting chip 101 of the semiconductor light emitting device according to the present disclosure. As an example of a flip chip, a semiconductor light emitting chip 101 includes a growth substrate 10, 30, 40, 50), a light reflection layer (R), and two electrodes (80, 70). As an example of the III-nitride semiconductor light emitting device, sapphire, SiC, Si, GaN or the like is mainly used as the growth substrate 10, and the growth substrate 10 may be finally removed. The plurality of semiconductor layers 30, 40, and 50 may include a buffer layer (not shown) formed on the growth substrate 10, a first semiconductor layer 30 having a first conductivity (e.g., Si-doped GaN) A second semiconductor layer 50 (e.g., Mg-doped GaN) having another second conductivity, and a second semiconductor layer 50 interposed between the first semiconductor layer 30 and the second semiconductor layer 50 to generate light through recombination of electrons and holes. An active layer 40 (e.g., InGaN / (In) GaN multiple quantum well structure). Each of the plurality of semiconductor layers 30, 40, and 50 may have a multi-layer structure, and the buffer layer may be omitted. The positions of the first semiconductor layer 30 and the second semiconductor layer 50 may be changed, and they are mainly composed of GaN in the III-nitride semiconductor light emitting device. The first electrode (80) is in electrical communication with the first semiconductor layer (30) to supply electrons. The second electrode 70 is in electrical communication with the second semiconductor layer 50 to supply holes.

9A, a light reflection layer R is interposed between the second semiconductor layer 50 and the electrodes 70 and 80. The light reflection layer R may be an insulating layer such as SiO ₂ , a distributed Bragg reflector (DBR) ) Or an Omni-Directional Reflector (ODR). Alternatively, as shown in FIG. 9B, a metal reflection film R may be provided on the second semiconductor layer 50, an electrode 70 may be provided on the metal reflection film R, and a first semiconductor layer 50 and the other electrode 80 can communicate with each other.

10 is a view for explaining still another example of the semiconductor light emitting device according to the present disclosure, in which the semiconductor light emitting device includes a heat sink 1500 provided below the heat dissipating unit 1000 (lower plate). The example shown in Fig. 10A is an example in which the heat sink 1500 is combined with the example shown in Fig. 7B, and the example shown in Fig. 10B is an example in which the heat sink 1500 is combined with the example shown in Fig. The heat dissipating unit 1000 may have a plate shape, and the heat sink 1500 may have a heat dissipating fin.

In the example shown in FIG. 10A, an adhesive layer 1150 may be interposed between the heat dissipation unit 1000 and the heat sink 1500. In the example shown in FIG. 10B, the heat dissipation unit 1000 and the heat sink 1500 are in direct contact, and the semiconductor light emitting device includes a pressing member 1400 (e.g., a screw). The pressing member 1400 may press or fix the power source transfer substrate 201, the heat dissipating unit 1000, and the heat sink 1500 to each other. The power supply substrate 201 and the heat dissipation unit 1000 are formed with holes for fastening with the heat sink 1500 and the heat sink 1500 may have a groove into which the screw 1400 is inserted. The screw 1400 penetrates the power supply substrate 201 and the heat dissipation unit 1000 through the fastening holes 281 and is coupled to the heat sink 1500. In addition to the screw 1400, the power supply substrate 201, the heat dissipation unit 1000, and other means for pressing and fixing the heat sink 1500 to each other (e.g., forceps, hooks, etc.) may be used.

The power supply substrate 201 includes a first conductive portion 241 for supplying a current to the semiconductor light emitting chip 101 and additional conductive portions 251 and 252 insulated from the second conductive portion 242 by the insulating portion 243, And the fastening holes 281 are formed in the additional conductive parts 251 and 252. [ When the plate is formed, the power transmission substrate 201 may be formed by cutting the conductive parts 251 and 252 so as to include the additional conductive parts 251 and 252. Therefore, even if the additional conductive parts 251 and 252 and the heat radiation part 1000 are electrically connected by the screw 1400, the first conductive part 241 and the second conductive part 242, which supply current to the semiconductor light emitting chip 101, There is no short-circuit between the electrodes.

FIG. 11 is a view for explaining still another example of the semiconductor light emitting device according to the present disclosure, wherein the additional conductive parts 251 and 252 may be located at both ends of the power supply substrate 201. The semiconductor light emitting device includes a dam 301 formed around the semiconductor light emitting chip 101 and an encapsulant 180 formed on the dam 301 to cover the semiconductor light emitting chip 101. The dam 301 is formed after the semiconductor light emitting chip 101 is disposed on the power supply transferring substrate 201 or before the dam 301 is disposed and the semiconductor light emitting chip 101 is mounted with the dam 301 as a guide. The first electrode 80 and the second electrode 70 may be disposed on the first conductive portion 241 and the second conductive portion 242, respectively.

11B, an oxide film 271 is formed as an insulating layer by an anodizing process on the lower surface of the power-transmitting substrate 201. The power-transmitting substrate 201 and the heat-dissipating unit 1000 are bonded to each other by the adhesive layer 1100, Respectively. In this embodiment, an additional adhesive layer 1150 is interposed between the heat dissipation unit 1000 and the heat sink 1500.

12 is a view for explaining still another example of the semiconductor light emitting device according to the present invention. In the semiconductor light emitting device, a heat dissipation unit 1000 that can correspond to a metal base is omitted from a metal PCB, And is directly coupled to the heat sink 1500 described above. 12A, the semiconductor light emitting device includes a dam 301 formed around the semiconductor light emitting chip 101, and an encapsulant 180 formed on the dam 301 to cover the semiconductor light emitting chip 101. In the example shown in FIG. The dam 301 is formed after the semiconductor light emitting chip 101 is disposed on the power supply transferring substrate 201 or before the dam 301 is disposed and the semiconductor light emitting chip 101 is mounted with the dam 301 as a guide. The first electrode 80 and the second electrode 70 may be disposed on the first conductive portion 241 and the second conductive portion 242, respectively. An oxide film 271 is formed on the lower surface of the power supply substrate 201 and an adhesive layer 1100 is interposed between the heat sink 1500 and the oxide film 271. Although the adhesive layer 1100 can be both conductive and non-conductive, it is preferable that the adhesive layer 1100 is non-conductive for improving insulation, and paste, insulating tape, or the like is possible.

In the example shown in FIG. 12B, the power-transmitting substrate 201 is directly bonded to the heat sink 1500 by the insulating layer 1200.

13A, 13A, an oxide film 271 is formed on the lower surface of the power supply transfer substrate 201, and the heat sink 1500 And the oxide film 271 are in direct contact with each other and the power supply substrate 201 and the heat sink 1500 are coupled to each other by the screw 1400.

In the example shown in FIG. 13B, the power-transmitting substrate 201 is provided with additional insulating portions 244 at both ends instead of the additional conductive portions 251 and 252. When the plate is formed, the power-transmitting substrate 201 may be formed by cutting it to include an additional insulating portion 244. The fastening hole 281 is formed in the additional insulating portion 244 and the screw 1400 is coupled to the heat sink 1500 through the fastening hole 281. [ An insulating layer 1200 such as a heat radiation tape or a prepreg is interposed between the power supply substrate 201 and the heat sink 1500.

FIG. 14 is a view for explaining still another example of the semiconductor light emitting device according to the present disclosure. In the example shown in FIG. 14A, the semiconductor light emitting device includes a semiconductor light emitting chip 101, a power supply transfer substrate 201, (Not shown), a heat sink 1500, a dam 301, an encapsulant 180, a pressing member 1400, and an electric element 1600 and a functional element 1650 do. The insulating layer is interposed between the power supply substrate 201 and the heat dissipation unit 1000 and a plurality of semiconductor light emitting chips 101 are connected in series and in parallel by the first conductive unit 241 and the second conductive unit 242 . The power source for emitting the semiconductor light emitting chip 101 is either AC or DC, and alternating current or DC power is generally converted into operating power required for operation of the semiconductor light emitting chip 101 and supplied. The electric element 1600 may be an element necessary for generating such an operation power source or another element necessary for light emission of the semiconductor light emitting chip 101. The electrical element 1600 may be provided over the additional conductive portions 251 and 252 and, if desired, an insulator may be interposed between the electrical element 1600 and the additional conductive portions 251 and 252. Alternatively, an electrical element 1600 may be provided on an additional insulating portion 244 (see FIG. 13B).

In addition, the functional element 1650 can be mounted on the power supply substrate 201. The functional element 1650 is an element related to the function of the semiconductor light emitting chip 101, and a protective element 1650 (e.g., a zener diode) is exemplified. As shown in FIG. 14A, the protection element 1650 may be connected as a flip-chip type element in a reverse parallel connection with the semiconductor light emitting chip 101. The functional element 1650 may be provided on the inner side of the dam 301 and covered with the sealing material 180. It is also contemplated that the functional element 1650 is buried in the wall 170 shown in Fig. 10B. Alternatively, the functional element 1650 may be connected in parallel in the reverse direction by a wire, as shown in Fig. 14B.

15A and 15B are diagrams for explaining another example of the semiconductor light emitting device according to the present disclosure. In the example shown in FIG. 15A, three rows of semiconductor light emitting chips 101 in the longitudinal direction are provided, Semiconductor light emitting chips 101 are connected in parallel.

On the other hand, as shown in Fig. 15B, it is also possible that an electric element 1600 or a functional element is provided on the insulating layer 1200. [ The semiconductor light emitting chip 101 may be a literal chip as well as a flip chip, or a vertical chip may be used, and may be electrically connected to the conductive portion by a wire as shown.

16 to 18 are diagrams for explaining an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure. In the method for manufacturing a semiconductor light emitting device, first, as shown in FIG. 16, a first conductive part 241 A second conductive portion 242 and an insulating portion 243 interposed between the first conductive portion 241 and the second conductive portion 242. The first conductive portion 241 and the insulating portion 243 ), And the second conductive portion 242 form a plate shape. For example, the conductive layer and the insulating material layer are alternately repeatedly laminated to form a laminate, and the laminate is cut to form the first conductive portion 241, the insulating portion 243, and the second conductive portion 242 Thereby forming a plate or a power-transmitting substrate 201. A plurality of conductive layers 241 and 242 (e.g., Al, Cu, Ag, Cu-Al alloy, Cu-Ag alloy, Cu-Au alloy, SUS (stainless steel) Etc.) to form a laminate. Thereafter, the laminate is cut (for example, a wire cutting method) to form a plate, as shown in Fig. 16B. The shapes of the cut surfaces of the first conductive portion 241, the second conductive portion 242, and the insulating portion 243 and the thickness thereof may be changed depending on the method of cutting. The width of the first conductive portion 241, the insulating portion 243, and the second conductive portion 242 can be adjusted by changing the thickness of the conductive layer and the insulating material layer.

A reflective film (not shown) or a PSR may be formed on an upper surface and / or a lower surface of the plate except for a region where the semiconductor light emitting chip 101 is to be positioned. The reflective film may be coated or deposited with a nonconductive material (e.g., SiO ₂ , DBR, or the like), or the first conductive portion 241 and the second conductive portion 242 may be coated on the upper surface and / Can be applied. Mirror surface treatment on the upper surface of the plate 110 can be performed by a method such as polishing before forming the reflective film. When the reflectance of the upper surface of the mirror-finished plate 110 is increased, the reflective film may be omitted.

Thereafter, the heat dissipation unit 1000 is fixed to the lower portion of the power supply substrate 201. The oxide film 271 may be formed on the lower surface of the power supply substrate 201 to insulate the power supply substrate 201 from the heat dissipation unit 1000 as shown in FIG. As an example of the method of forming the oxide film 271, an oxide film 271 is formed on the lower surface of the plate formed as described above through an anodizing process. Typically, the material of the plate is Al, and the thickness of the oxide layer 271 (e.g., Al ₂ O ₃ ) can be controlled by adjusting the anodizing process or selecting the kind of the electrolyte. The oxide film 271 also functions as an insulating film to protect the power-transmitting substrate 201, such as corrosion resistance, in addition to its function. In some cases, an anodizing process may be performed on the upper surface of the power-transmitting substrate 201 except for a region where the semiconductor light-emitting chip is to be provided and an upper surface other than an electrical connection (e.g., wire bonding).

17B, a heat radiation tape or a heat dissipation composite material may be used as the insulation layer 1200, and an insulation layer interposed between the metal base and the copper foil in the metal PCB may be used. For example, a highly heat-resistant composite material is a composite material containing a filler in a matrix such as epoxy, and a composite material in which a high thermal conductive filler material and a polymer material are mixed. When composite materials are used, the advantages of each material can be taken by blending the high adhesive strength of the polymer material and the high thermal conductivity of the inorganic filler material. Examples of the filler include aluminum oxide, aluminum nitride, boron nitride, carbon fiber and the like. As an example of the composite material, a prepreg can be used as the insulating layer 1200 as a material impregnated with carbon fibers in the resin. As the heat radiation tape, materials such as polyimide tape, PTFE tape, silicone tape and the like can be used.

On the other hand, as shown in Fig. 17C for insulation, the oxide film 271 and the insulating adhesive layer 1100 can be included. It is of course possible to form a heat radiation tape, a composite material, and an adhesive layer on the heat dissipation portion 1000, and attach the power supply transmission board 201 thereon.

As described above, in the present disclosure, since the conductive portions 241 and 242 of the power-transmitting substrate 201 have a structure that is much more advantageous in heat radiation in the thickness and the area than the copper foil pattern of the metal PCB, The thickness of the insulating layer 1200 is suitably adjusted. For example, the thickness of the power-transmitting substrate 201 is about 400 탆 to 500 탆, the thickness of the insulating layer can be 10 탆 to 200 탆, and the withstand voltage can be 1 KV or more.

18, the semiconductor light emitting chip 101 is bonded to the first electrode 80 and the first conductive portion 241, and the second electrode 70 and the second conductive portion 242 are bonded to each other. Surface mount.

In mounting, a device transferring apparatus 501 for recognizing a pattern can be used. 18A, the element transferring apparatus 501 picks up each semiconductor light emitting chip 101 on the fixing portion 13 (for example, a tape) to form the semiconductor light emitting chip 101 as shown in FIG. 18B The first electrode 80 is placed on the power transmission substrate 201 so that the first conductive portion 241 and the second electrode 70 are bonded to the second conductive portion 242. In this example, the semiconductor light emitting chip 101 is mounted after the heat dissipation unit 1000 and the power supply transfer substrate 201 are bonded. The insulating portion 243 is positioned between the first conductive portion 241 and the second conductive portion 242 and the device transferring device 501 recognizes such a pattern so that the position and angle at which the semiconductor light emitting chip 101 is placed Can be corrected. As an example of the device transferring apparatus 501, a device capable of recognizing a pattern or a shape and correcting the position to be transferred or the angle of the object, similar to the die bonder, may be used irrespective of the name.

The fastening holes 281 may be formed in the power supply substrate 201 and the heat dissipation unit 1000 before or after the semiconductor light emitting chip 101 is mounted.

Thereafter, as shown in FIG. 18C, the power supply substrate 201 and the heat dissipation unit 1000 may be cut to manufacture a semiconductor light emitting device having the required number of semiconductor light emitting chips. As a cutting method, a cutter 35 may be used, a laser may be used, and a cutting, scribing and braking method may be used.

19 is a view for explaining another example of the method of manufacturing the semiconductor light emitting device according to the present disclosure. In the process of joining the heat sink 1500 to the above-described method of manufacturing the semiconductor light emitting device described in FIGS. 16 to 18 Can be added. The heat dissipation unit 1000 is placed on the heat sink 1500 and the power supply substrate 201, the heat dissipation unit 1000, and the heat sink 1500 are connected to each other by the screw 1400 passing through the fastening holes 281, Lt; / RTI >

The wires 961 and 965 are bonded to the conductive portions 241 and 242 before or after screw tightening.

20 and 21 are diagrams for explaining another example of the method of manufacturing the semiconductor light emitting device according to the present disclosure. As shown in FIG. 20A, the semiconductor light emitting chip 101 is mounted on the power supply substrate 201, 20b, the power-transmitting substrate 201 is cut to a required size. Thereafter, as shown in FIG. 21A, an insulating layer 1200 is interposed between the power-transmitting substrate 201 and the heat-dissipating unit 1000 to join them. Next, as shown in FIG. 21B, the heat sink 1500 is fixed to the heat radiating portion 1000 using the screw 1400. Next, as shown in FIG.

22 and 23 are diagrams for explaining another example of the manufacturing method of the semiconductor light emitting device according to the present disclosure. First, as shown in FIG. 22, the power supply substrate 201 and the dam 301 are connected by a clamp 25 And the dam 301 is provided on the power supply substrate 201. 22A, the dam 301 has a plurality of openings 305, and the dam 301 may be a plastic, a metal, or a member having a film formed on its surface, and the first and second conductive parts It is possible to use the same material.

Thereafter, as shown in FIG. 23A, the semiconductor light emitting chip (not shown) is attached to the first conductive portion 241 and the second conductive portion 243 exposed to the opening 305 of the dam 301 using the element transfer device 501 101). In this example, the device transferring apparatus 501 recognizes the shape (surface, line, edge, point, etc.) of the dam 301 and calculates coordinates to be placed on the semiconductor light emitting chip 101. In addition, the element transferring apparatus 501 can recognize the shape or the pattern of the electrodes 70 and 80. Therefore, it is preferable that at least one of the material, color, and light reflectance is selected to be different between the dam 301 and the power-transmitting substrate 201. Subsequently, as shown in FIG. 23B, a wall 170 is formed so that the upper end of the light emitting chip 101 is exposed in the semicircle by supplying a resin, a non-light-transmitting material, or a highly reflective material to the opening 305. At this time, the side surface 307 of the dam 301 due to the opening 305 is an inclined surface, so that the resin or the like rides on the inclined surface by the surface tension, and the upper end of the wall 170 has a shape as shown in FIG. 23B. Thereafter, as shown in FIG. 23C, the wall 170 is cured and an encapsulant 180 containing a phosphor is formed on the top of the wall 170 and the semiconductor light emitting chip 101. Then, if necessary, the power supply substrate 201 and the dam 301 are cut together. Next, the power supply substrate 201 and the heat sink 1500 are bonded to each other with the adhesive layer 1100. [ An oxide film 271 may be formed on the lower surface of the power supply substrate 201 or an insulating layer 1200 as shown in FIG. Further, the power-transmitting substrate 201 may be constituted to have an additional conductive layer or an additional insulating layer, and a screw fastening may be added.

Various embodiments of the present disclosure will be described below.

(1) A semiconductor light emitting device comprising: a first conductive portion, a second conductive portion, and an insulating portion interposed between the first conductive portion and the second conductive portion, wherein the first conductive portion, A power supply substrate having a plate shape and powered from the outside to the first conductive portion and the second conductive portion; A semiconductor light emitting chip having a semiconductor light emitting portion which generates light by recombination of electrons and holes and at least one electrode which is formed in the semiconductor light emitting portion and which is placed on the power supply transmitting substrate; A heat sink positioned below the power-transmitting substrate and receiving heat from the power-transmitting substrate; And a pressing member for pressing and fixing the power supply substrate and the heat sink to each other.

(2) The power-transmitting substrate is provided with a first conductive portion for supplying a current to the semiconductor light-emitting chip and a fastening hole insulated from the second conductive portion, and the urging member is a screw- Wherein the semiconductor light emitting device is a semiconductor light emitting device.

(3) An insulating layer positioned between the power supply substrate and the heat sink.

(4) An oxide film formed on the lower surfaces of the first conductive portion and the second conductive portion facing the heat sink.

(5) an insulating layer positioned between the power supply substrate and the heat sink; And a further conductive part insulated from the first conductive part and the second conductive part for supplying current to the semiconductor light emitting chip and having a fastening hole formed therein.

(6) an insulating layer positioned between the power supply substrate and the heat sink; Further, the power-transmitting substrate includes a further insulating portion other than the insulating portion between the first conductive portion and the second conductive portion that supplies current to the semiconductor light-emitting chip, and the additional insulating portion formed with the fastening hole .

(7) A semiconductor light emitting device comprising: a heat dissipation unit interposed between an insulating layer and a heat sink, the heat dissipation unit transmitting heat from a power supply substrate to a heat sink.

(8) The semiconductor light emitting device according to any one of (1) to (8), wherein the heat radiating portion is a metal plate.

(9) The semiconductor light emitting device according to any one of claims 1 to 10, wherein the insulating layer comprises at least one of a thermal tape and a prepreg.

(10) The insulating layer includes: an oxide film formed on the lower surface of the first conductive portion and the second conductive portion facing the heat sink; And an adhesive layer for bonding the oxide film and the heat dissipation part.

(11) The semiconductor light emitting device according to (11), wherein the thickness of the insulating layer is 10 占 퐉 or more, and the withstand voltage of the combination of the power supply substrate, the insulating layer and the heat dissipating portion is 1KV or more.

(12) The semiconductor light emitting chip is a flip chip, wherein at least one electrode comprises: a first electrode bonded to the first conductive portion; And a second electrode connected to the second conductive portion.

(13) An electrical device comprising at least one of an additional conductive portion and an additional insulating portion.

According to one semiconductor light emitting device and a manufacturing method thereof according to the present disclosure, a light emitting device having improved heat radiation efficiency is provided.

According to another semiconductor light emitting device and a method of manufacturing the same according to the present disclosure, a semiconductor light emitting device having a power transfer and heat dissipation structure that can replace a conventional metal PCB is provided.

According to another semiconductor light emitting device and a method of manufacturing the same according to the present disclosure, a semiconductor light emitting device with improved withstand voltage is provided.

According to another semiconductor light emitting device and a method of manufacturing the same according to the present disclosure, a power transmitting substrate on which a semiconductor light emitting chip is mounted is provided, and a semiconductor light emitting device having a power transmitting substrate with improved heat radiation efficiency is provided.

Power supply substrate (201) Semiconductor light emitting chip (101) Heat dissipation unit (1000)
An oxide layer 271, an adhesive layer 1100, an insulating layer 1200, a heat sink 1500,

Claims (11)

In the semiconductor light emitting device,
The first conductive portion, the second conductive portion, and the insulating portion interposed between the first conductive portion and the second conductive portion, wherein the first conductive portion, the insulating portion, and the second conductive portion form a plate shape, A power supply substrate to which power is applied to the first conductive portion and the second conductive portion;
A semiconductor light emitting chip having a semiconductor light emitting portion which generates light by recombination of electrons and holes and at least one electrode which is formed in the semiconductor light emitting portion and which is placed on the power supply transmitting substrate;
A heat sink positioned below the power-transmitting substrate and receiving heat from the power-transmitting substrate;
A pressing member for pressing and fixing the power supply substrate and the heat sink to each other; And,
And an insulating layer disposed between the power supply substrate and the heat sink,
Wherein a thickness of the insulating layer is 10 占 퐉 or more, and a withstand voltage of a combination of the power-transmitting substrate, the insulating layer, and the heat-dissipating portion is 1 KV or more. The method according to claim 1,
The power transmitting substrate is provided with a first conductive portion for supplying a current to the semiconductor light emitting chip and a fastening hole insulated from the second conductive portion,
Wherein the pressing member is a screw which penetrates through the fastening hole and engages with the heat sink. The method according to claim 1,
And an oxide film formed on the lower surface of the first conductive portion and the second conductive portion facing the heat sink. The method of claim 2,
And a further conductive part which is insulated from the first conductive part and the second conductive part which supply current to the semiconductor light emitting chip and in which the fastening hole is formed. The method of claim 2,
The power-transmitting substrate further includes an additional insulating portion other than the insulating portion between the first conductive portion and the second conductive portion that supplies current to the semiconductor light-emitting chip, wherein the additional insulating portion has a fastening hole formed therein . The method according to any one of claims 4 to 5,
And a heat dissipation part which is interposed between the insulating layer and the heat sink and transmits heat from the power supply substrate to the heat sink. The method of claim 6,
Wherein the heat radiating portion is a metal plate. The method according to claim 1,
Wherein the insulating layer comprises at least one of a thermal tape and a prepreg. The method according to claim 1,
The insulating layer is:
An oxide film formed on the lower surface of the first conductive portion and the second conductive portion facing the heat sink; And
And an adhesive layer for bonding the oxide film and the heat dissipating portion. The method according to claim 1,
The semiconductor light emitting chip is a flip chip,
The at least one electrode comprises:
A first electrode bonded to the first conductive portion; And
And a second electrode connected to the second conductive portion. The method according to any one of claims 4 to 5,
And an electrical element provided on at least one of the additional conductive portion and the additional insulating portion.

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