KR101887104B1 - 레이저 산출 플라즈마 euv 광원 - Google Patents
레이저 산출 플라즈마 euv 광원 Download PDFInfo
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Abstract
Description
도 2는 개략적인 간략화된 액적 소스를 도시한다;
도 2a-2d는 오리피스를 빠져나오는 스트림에서의 교란을 생성하기 위해 유체와 전기-작동가능 엘리먼트를 커플링하는 다수의 상이한 기술을 도시한다;
도 3(종래 기술)은 단일 주파수, 비변조 교란 파형으로 인한 액적의 패턴을 도시한다;
도 4는 진폭 변조 교란 파형으로 인한 액적의 패턴을 도시한다;
도 5는 주파수 변조 교란 파형으로 인한 액적의 패턴을 도시한다;
도 6은 단일 주파수, 비변조 파형 교란과 다수 주파수 변조 파형 교란을 위해 획득된 주석 액적의 사진을 도시한다;
도 7은 액적 쌍이 조사 위치에 도달하여 하나의 액적이 플라즈마 찌꺼기로부터 후속하는 액적 쌍을 보호하도록하는 변조 파형 교란을 이용하여 도달가능한 액적 패턴을 도시한다;
도 8은 액적 쌍이 EUV 방출 플라즈마를 생성하기 위해 제 2 액적을 조사시키는 방전을 시작하도록 광을 자기유도(self-directing) 레이저 시스템으로 반사하는 제 1 액적을 가지고 조사 위치에 도달하는 변조 파형 교란을 이용하여 도달가능한 액적 패턴을 도시한다;
도 8a는 액적의 더블릿이 조사 위치에 도달하고 플라즈마를 산출하기 위해 상기 액적 더블릿에서의 각각의 액적이 조사되는 액적 패턴을 도시한다;
도 9는 사인파 신호의 홀수 고조파의 중첩으로서 구형파의 표현을 도시한다;
도 10은 출력 오리피스로부터 ~ 40mm에서 찍은 30 kHz에서의 구형파 변조로 획득된 액적의 이미지를 도시한다;
도 11은 출력 오리피스로부터 ~ 120mm에서 찍은 30 kHz에서에서 구형파 변조로 획득된 액적의 이미지를 도시한다;
도 12a-d는 직사각파를 위한 주파수 스펙트럼(도 12b)을 포함하는 직사각파(12a) 변조에 대한 실험 결과; 출력 오리피스로부터 20mm에서 찍은 액적의 이미지(도 12c), 및 출력 오리피스로부터450mm에서 찍은 병합된 액적의 이미지(도 12d)를 도시한다;
도 13a-d는 빠른 펄스를 위한 주파수 스펙트럼(도 13b)을 포함하는 빠른 펄스(13a) 변조에 대한 실험 결과; 출력 오리피스로부터 20mm에서 찍은 액적의 이미지(도 13c), 및 출력 오리피스로부터 450mm에서 찍은 병합된 액적의 이미지(도 13d)를 도시한다;
도 14a-d는 빠른 램프 파를 위한 주파수 스펙트럼(도 14b)을 포함하는 빠른 램프 파(14a) 변조에 대한 실험 결과; 출력 오리피스로부터 20mm에서 찍은 액적의 이미지(도 14c), 및 출력 오리피스로부터 450mm에서 찍은 병합된 액적의 이미지(도 14d)를 도시한다;
도 15a-d는 사인함수파를 위한 주파수 스펙트럼(도 15b)을 포함하는 사인함수파(15a) 변조에 대한 실험 결과; 출력 오리피스로부터 20mm에서 찍은 액적의 이미지(도 15c), 및 출력 오리피스로부터 450mm에서 찍은 병합된 액적의 이미지(도 15d)를 도시한다;
Claims (9)
- EUV 방사선 산출 장치로서,
타겟 재료 액적(droplet)의 소스와, 플라즈마를 형성하기 위해 조사 위치(irradiation region)에서 상기 액적을 조사(irradiate)하는 빔을 산출하는 레이저를 구비하는 플라즈마 생성 시스템을 포함하고,
상기 플라즈마는 EUV 방사선을 산출하고,
상기 액적 소스는 오리피스를 빠져나오는 유체 및 상기 유체에서의 교란을 산출하는 전기-작동가능 엘리먼트를 구비하는 서브-시스템을 포함하고, 상기 교란은 상이한 최초 속도를 가진 액적들을 생성하여, 상기 액적이 상기 조사 위치로 이동할 때 적어도 일부 인접한 액적 사이의 간격이 감소하게 되고,
상기 서브-시스템은 일련의 펄싱된 교란을 산출하고, 각각의 펄싱된 교란은, 상기 전기-작동가능 엘리먼트를 사전결정된 파형에 의해 구동함으로써 기본 주파수 및 상기 기본 주파수의 적어도 하나의 더 높은 차수의 고조파에서 기계적 진동을 생성하도록 파형 기간의 길이에 비해 짧은 증가 시간(rise-time)과 감소 시간(fall-time) 중 적어도 하나를 가지는, EUV 방사선 산출 장치. - 제1항에 있어서,
적어도 일부 인접한 액적은 상기 조사 위치에 도달하기 전에 병합하는, EUV 방사선 산출 장치. - 제1항에 있어서,
상기 교란은 주파수 변조 교란 파형을 포함하는, EUV 방사선 산출 장치. - 제1항에 있어서,
상기 교란은 진폭 변조 교란 파형을 포함하는, EUV 방사선 산출 장치. - 제1항에 있어서,
상기 사전결정된 파형은 구형파, 직사각파, 및 피크가 있는 비정현파로 구성된 파형의 그룹에서 선택되는, EUV 방사선 산출 장치. - 제5항에 있어서,
피크가 있는 비정현파는 펄스 파형, 램프 파형과 사인함수 파형으로 구성된 파형의 그룹에서 선택되는, EUV 방사선 산출 장치. - 제1항에 있어서,
상기 사전결정된 파형은 구형파, 직사각파, 및 피크가 있는 비정현파로 구성된 파형의 그룹에서 선택되고, 상기 적어도 하나의 더 높은 차수의 고조파는 상기 기본 주파수의 더 높은 차수의 홀수 고조파인, EUV 방사선 산출 장치. - 제1항에 있어서,
상기 사전결정된 파형은 구형파, 직사각파, 및 피크가 있는 비정현파로 구성된 파형의 그룹에서 선택되고, 상기 적어도 하나의 더 높은 차수의 고조파는 상기 기본 주파수의 적어도 하나의 더 높은 차수의 짝수 고조파 및 상기 기본 주파수의 적어도 하나의 더 높은 차수의 홀수 고조파를 포함하는, EUV 방사선 산출 장치. - 제1항에 있어서,
상기 기본 주파수와 그의 파생물 및 등가물은, 상기 오리피스를 빠져나오는 유체를 교란하는 주파수 또는 상기 유체에 교란을 산출하는 전기-작동가능 엘리먼트를 구비한 상기 서브-시스템에 가해진 주파수로서, 액적 스트림에 있는 액적이 균일하게 이격된 액적 패턴으로 완전히 병합되도록 허용되면, 기본 주파수 기간당 하나의 완전히 병합된 액적이 존재할 수 있도록 액적 스트림을 산출하는, EUV 방사선 산출 장치.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/721,317 US8158960B2 (en) | 2007-07-13 | 2010-03-10 | Laser produced plasma EUV light source |
| US12/721,317 | 2010-03-10 | ||
| PCT/US2011/000374 WO2011112235A1 (en) | 2010-03-10 | 2011-03-01 | Laser produced plasma euv light source |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020127026406A Division KR20130006650A (ko) | 2010-03-10 | 2011-03-01 | 레이저 산출 플라즈마 euv 광원 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20170066704A KR20170066704A (ko) | 2017-06-14 |
| KR101887104B1 true KR101887104B1 (ko) | 2018-08-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020127026406A Ceased KR20130006650A (ko) | 2010-03-10 | 2011-03-01 | 레이저 산출 플라즈마 euv 광원 |
| KR1020177015321A Active KR101887104B1 (ko) | 2010-03-10 | 2011-03-01 | 레이저 산출 플라즈마 euv 광원 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020127026406A Ceased KR20130006650A (ko) | 2010-03-10 | 2011-03-01 | 레이저 산출 플라즈마 euv 광원 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8158960B2 (ko) |
| EP (1) | EP2544766B1 (ko) |
| JP (2) | JP6403362B2 (ko) |
| KR (2) | KR20130006650A (ko) |
| CN (1) | CN102791331B (ko) |
| TW (1) | TWI479955B (ko) |
| WO (1) | WO2011112235A1 (ko) |
Families Citing this family (52)
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| US8653437B2 (en) | 2010-10-04 | 2014-02-18 | Cymer, Llc | EUV light source with subsystem(s) for maintaining LPP drive laser output during EUV non-output periods |
| US8654438B2 (en) | 2010-06-24 | 2014-02-18 | Cymer, Llc | Master oscillator-power amplifier drive laser with pre-pulse for EUV light source |
| US8513629B2 (en) * | 2011-05-13 | 2013-08-20 | Cymer, Llc | Droplet generator with actuator induced nozzle cleaning |
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| US8881526B2 (en) | 2009-03-10 | 2014-11-11 | Bastian Family Holdings, Inc. | Laser for steam turbine system |
| US8304752B2 (en) * | 2009-04-10 | 2012-11-06 | Cymer, Inc. | EUV light producing system and method utilizing an alignment laser |
| US8263953B2 (en) * | 2010-04-09 | 2012-09-11 | Cymer, Inc. | Systems and methods for target material delivery protection in a laser produced plasma EUV light source |
| US8462425B2 (en) | 2010-10-18 | 2013-06-11 | Cymer, Inc. | Oscillator-amplifier drive laser with seed protection for an EUV light source |
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| US9516730B2 (en) | 2011-06-08 | 2016-12-06 | Asml Netherlands B.V. | Systems and methods for buffer gas flow stabilization in a laser produced plasma light source |
| KR102106026B1 (ko) * | 2012-03-07 | 2020-05-04 | 에이에스엠엘 네델란즈 비.브이. | 방사선 소스 및 리소그래피 장치 |
| SG11201407262VA (en) * | 2012-05-21 | 2014-12-30 | Asml Netherlands Bv | Radiation source |
| JP2013251100A (ja) | 2012-05-31 | 2013-12-12 | Gigaphoton Inc | 極紫外光生成装置及び極紫外光生成方法 |
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- 2011-03-01 EP EP11753705.0A patent/EP2544766B1/en active Active
- 2011-03-01 KR KR1020177015321A patent/KR101887104B1/ko active Active
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI479955B (zh) | 2015-04-01 |
| US20100294953A1 (en) | 2010-11-25 |
| KR20170066704A (ko) | 2017-06-14 |
| EP2544766A4 (en) | 2016-01-27 |
| EP2544766A1 (en) | 2013-01-16 |
| US8158960B2 (en) | 2012-04-17 |
| JP6557716B2 (ja) | 2019-08-07 |
| JP6403362B2 (ja) | 2018-10-10 |
| KR20130006650A (ko) | 2013-01-17 |
| EP2544766B1 (en) | 2017-08-02 |
| JP2018041110A (ja) | 2018-03-15 |
| TW201143538A (en) | 2011-12-01 |
| CN102791331A (zh) | 2012-11-21 |
| WO2011112235A1 (en) | 2011-09-15 |
| CN102791331B (zh) | 2016-02-17 |
| JP2013522823A (ja) | 2013-06-13 |
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