KR101795028B1 - Light emitting device and method of fabricating the same - Google Patents

Abstract

A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a body portion having a cavity formed therein; A light emitting portion disposed in the cavity; A lead electrode connected to the light emitting portion; A wavelength conversion unit covering the light emitting unit and disposed in the cavity; And a capping unit covering the wavelength conversion unit.

Description

TECHNICAL FIELD [0001] The present invention relates to a light emitting device,

Embodiments relate to a light emitting device and a method of manufacturing the same.

Light emitting diodes (LEDs) can be made of a compound semiconductor material such as GaAs-based, AlGaAs-based, GaN-based, InGaN-based, and InGaAlP-based.

Such a light emitting diode is used as a light emitting device that is packaged and emits various colors, and the light emitting device is used as a light source in various fields such as a lit indicator, a character indicator, and an image indicator.

Embodiments provide a light emitting device having improved durability and reliability and a method of manufacturing the same.

The light emitting device according to the embodiment includes a body portion having a cavity formed therein; A light emitting portion disposed in the cavity; A lead electrode connected to the light emitting portion; A wavelength conversion unit covering the light emitting unit and disposed in the cavity; And a capping unit covering the wavelength conversion unit.

A method of fabricating a light emitting device according to an embodiment of the present invention includes forming a body portion in which a cavity is formed, forming a wavelength conversion portion in the cavity, surface processing the body portion, and forming a capping portion covering the wavelength conversion portion.

The light emitting device according to the embodiment includes a capping unit covering the wavelength converting unit. Accordingly, the capping unit can effectively protect the wavelength conversion unit from external moisture and / or oxygen.

In particular, the capping portion may include a mixture of an organic material and an inorganic material, and may have a dense structure. Accordingly, the capping unit can protect a plurality of wavelength conversion particles in the wavelength conversion unit.

Therefore, the light emitting device according to the embodiment can have improved durability and reliability.

1 is a perspective view illustrating a light emitting diode package according to an embodiment.
FIG. 2 is a cross-sectional view showing a section cut along AA 'in FIG. 1; FIG.
FIGS. 3 to 8 are views illustrating a process of fabricating a light emitting diode package according to an embodiment.
9 and 10 are views showing light emitting diode packages according to another embodiment.

In the description of the embodiments, in the case where each substrate, layer, film or electrode is described as being formed "on" or "under" of each substrate, layer, film, , "On" and "under" all include being formed "directly" or "indirectly" through "another element". In addition, the upper or lower reference of each component is described with reference to the drawings. The size of each component in the drawings may be exaggerated for the sake of explanation and does not mean the size actually applied.

1 is a perspective view illustrating a light emitting diode package according to an embodiment. 2 is a cross-sectional view showing a section taken along the line A-A in Fig.

1 and 2, a light emitting diode package according to an embodiment includes a body 100, lead electrodes 210 and 220, a light emitting chip 300, a wavelength conversion part 400, and a capping part 500, .

The body part 100 may be formed of any one of a resin material such as epoxy or polyphthalamide (PPA), a ceramic material, a liquid crystal polymer (LCP), an SPS (Syndiotactic), a PPS . However, the present invention is not limited to the material of the body 100.

The body portion 100 includes a cavity C having an open top. The cavity C may be formed on the body 100 by patterning, punching, cutting, etching or the like. In addition, the cavity C may be formed by a metal frame shaped like a cavity C when the body 100 is formed.

The shape of the cavity C may be a cup shape, a concave container shape, or the like. The surface of the cavity C may be formed in a circular shape, a polygonal shape, or a random shape, but is not limited thereto.

The inner side surface 122 of the cavity C may be formed as a surface perpendicular or inclined with respect to the bottom surface 123 of the cavity C in consideration of the light distribution angle of the light emitting diode.

The body portion 100 includes a base portion 110 and a receiving portion 120.

The base portion 110 supports the receiving portion 120. In addition, the base 110 supports the lead electrodes 210 and 220. The base portion 110 may have, for example, a rectangular parallelepiped shape.

The receiving portion 120 is disposed on the base portion 110. The cavity (C) is defined by the accommodating portion (120). That is, the cavity C is a groove formed in the receiving portion 120. The accommodating portion 120 surrounds the periphery of the cavity C. [ The receiving portion 120 may have a closed loop shape when viewed from the top side. For example, the receiving portion 120 may have a wall shape surrounding the cavity C.

The receiving portion 120 includes an upper surface 121, an outer surface, and an inner surface 122. The inner surface 122 is an inclined surface inclined with respect to the upper surface 121.

A reflective layer may be formed on the inner surface 122 of the cavity C. For example, a white PSR (Photo Solder Resist) ink, silver (Ag), aluminum (Al), or the like may be coated or applied on the inner surface of the receiving portion 120, Accordingly, the light emitting efficiency of the light emitting diode package according to the embodiment can be improved.

The lead electrodes 210 and 220 may be formed integrally with the body portions 100. More specifically, two lead electrodes 210 and 220 may be provided on one body portion 100. The lead electrodes 210 and 220 may be implemented as a lead frame, but the present invention is not limited thereto.

The lead electrodes 210 and 220 may be disposed in the body 100 and the lead electrodes 210 and 220 may be electrically spaced from the bottom surface 123 of the cavity C. [ . The outer side of the lead electrodes 210 and 220 may be exposed to the outside of the body 100. More specifically, the lead electrodes 210 and 220 are provided in the base unit 110.

The ends of the lead electrodes 210 and 220 may be disposed on one side of the cavity C or on the opposite side of the cavity C. [

The lead electrodes 210 and 220 may be a lead frame, and the lead frame may be formed during the injection molding of the body 100. The lead electrodes 210 and 220 may be, for example, a first lead electrode 210 and a second lead electrode 220.

The first lead electrode 210 and the second lead electrode 220 are spaced apart from each other. The first lead electrode 210 and the second lead electrode 220 are electrically connected to the light emitting chip 300.

The light emitting chip 300 is disposed inside the cavity C. The light emitting chip 300 is a light emitting unit that generates light. More specifically, the light emitting chip 300 may be a light emitting diode chip that generates light. For example, the light emitting chip 300 may include a color light emitting diode chip or a UV light emitting diode chip. One light emitting chip 300 may be disposed in one cavity C, respectively.

The light emitting chip 300 may be a vertical light emitting diode chip. The light emitting chip 300 may include a conductive substrate, a reflective layer, a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer, and a second electrode.

The conductive substrate is made of a conductor. The conductive substrate supports the reflective layer, the first conductivity type semiconductor layer, the second conductivity type semiconductor layer, the active layer, and the second electrode.

The conductive substrate is connected to the first conductive type semiconductor layer through the reflective layer. That is, the conductive substrate is a first electrode for applying an electrical signal to the first conductive type semiconductor layer.

The reflective layer is disposed on the conductive substrate. The reflective layer reflects upward the light emitted from the active layer. Further, the reflective layer is a conductive layer. Therefore, the reflective layer connects the conductive substrate to the first conductive type semiconductor layer. Examples of the material used for the reflective layer include metals such as silver and aluminum.

The first conductivity type semiconductor layer is disposed on the reflective layer. The first conductivity type semiconductor layer has a first conductivity type. The first conductive semiconductor layer may be an n-type semiconductor layer. For example, the first conductive semiconductor layer may be an n-type GaN layer.

The second conductivity type semiconductor layer is disposed on the first conductivity type semiconductor layer. The second conductive semiconductor layer may face the first conductive semiconductor layer and may be a p-type semiconductor layer. The second conductive semiconductor layer may be, for example, a p-type GaN layer.

The active layer is sandwiched between the first conductive type semiconductor layer and the second conductive type semiconductor layer. The active layer has a single quantum well structure or a multiple quantum well structure. The active layer may be formed of a period of an InGaN well layer and an AlGaN barrier layer, or a period of an InGaN well layer and a GaN barrier layer, and the light emitting material of the active layer may vary depending on an emission wavelength, for example, a blue wavelength, a red wavelength, .

And the second electrode is disposed on the second conductive type semiconductor layer. And the second electrode is connected to the second conductivity type semiconductor layer.

Alternatively, the light emitting chip 300 may be a horizontal LED. At this time, in order to connect the horizontal LED to the first lead electrode 210, additional wiring may be required.

The light emitting chip 300 may be connected to the first lead electrode 210 by a bump or the like and may be connected to the second lead electrode 220 by a wire. In particular, the light emitting chip 300 may be disposed directly on the first lead electrode 210.

The light emitting chip 300 may be connected to the lead electrodes 210 and 220 by a wire bonding method, a die bonding method, a flip bonding method, or the like, but is not limited thereto .

The wavelength converter 400 is disposed in the cavity. The wavelength conversion unit 400 covers the light emitting chip 300. The wavelength conversion unit 400 is in close contact with the inner surface of the cavity. That is, no air layer exists between the wavelength converter 400 and the inner surface of the cavity.

The top surface of the wavelength converter 400 may be flat. Alternatively, the upper surface of the wavelength converter 400 may be concave or convex.

The wavelength converter 400 converts the wavelength of the light emitted from the light emitting chip 300. In more detail, the wavelength converter 400 may include a plurality of wavelength conversion particles 411 and 421 for converting the wavelength of the incident light.

The wavelength conversion particles 411 and 421 convert the wavelength of the incident light. In more detail, the wavelength conversion particles 411 and 421 may convert the wavelength of the light emitted from the light emitting chip 300. The wavelength conversion particles 411 and 421 may be quantum dots or phosphors.

The quantum dot may include core nanocrystals and shell nanocrystals surrounding the core nanocrystals. In addition, the quantum dot may include an organic ligand bound to the shell nanocrystal. In addition, the quantum dot may include an organic coating layer surrounding the shell nanocrystals.

The shell nanocrystals may be formed of two or more layers. The shell nanocrystals are formed on the surface of the core nanocrystals. The quantum dot may convert the wavelength of the light incident on the core core crystal into a long wavelength through the shell nanocrystals forming the shell layer and increase the light efficiency.

The quantum dot may include at least one of a group II compound semiconductor, a group III compound semiconductor, a group V compound semiconductor, and a group VI compound semiconductor. More specifically, the core nanocrystals may include Cdse, InGaP, CdTe, CdS, ZnSe, ZnTe, ZnS, HgTe or HgS. The shell nanocrystals may include CuZnS, CdSe, CdTe, CdS, ZnSe, ZnTe, ZnS, HgTe or HgS. The diameter of the quantum dot may be 1 nm to 10 nm.

The wavelength of light emitted from the quantum dots can be controlled by the size of the quantum dots or the molar ratio of the molecular cluster compound and the nanoparticle precursor in the synthesis process. The organic ligand may include pyridine, mercapto alcohol, thiol, phosphine, phosphine oxide, and the like. The organic ligands serve to stabilize unstable quantum dots after synthesis. After synthesis, a dangling bond is formed on the outer periphery, and the quantum dots may become unstable due to the dangling bonds. However, one end of the organic ligand is in an unbonded state, and one end of the unbound organic ligand bonds with the dangling bond, thereby stabilizing the quantum dot.

Particularly, when the quantum dot has a size smaller than the Bohr radius of an exciton formed by electrons and holes excited by light, electricity or the like, a quantum confinement effect is generated to have a staggering energy level and an energy gap The size of the image is changed. Further, the charge is confined within the quantum dots, so that it has a high luminous efficiency.

Unlike general fluorescent dyes, the quantum dots vary in fluorescence wavelength depending on the particle size. That is, as the size of the particle becomes smaller, it emits light having a shorter wavelength, and the particle size can be adjusted to produce fluorescence in a visible light region of a desired wavelength. In addition, since the extinction coefficient is 100 to 1000 times higher than that of a general dye, and the quantum yield is also high, it produces very high fluorescence.

The quantum dot can be synthesized by a chemical wet process. Here, the chemical wet method is a method of growing particles by adding a precursor material to an organic solvent, and the quantum dots can be synthesized by a chemical wet method.

The fluorescent material may be a yellow fluorescent material, a red fluorescent material, or a green fluorescent material. The fluorescent material may be a YAG fluorescent material, a TAG fluorescent material, a sialon fluorescent material, or a BOS fluorescent material.

The wavelength converter 400 may include a first wavelength converter 410 and a second wavelength converter 420.

The first wavelength converter 410 is disposed on the bottom surface 123 of the cavity C. The first wavelength converter 410 converts light emitted from the light emitting chip 300 into light having a first wavelength. For example, when blue light is emitted from the light emitting chip 300, the first wavelength converter 410 may convert the blue light into green light.

The first wavelength converter 410 includes a plurality of first wavelength-converted particles 411 and a first host layer 412.

The first wavelength-converted particles 411 are uniformly dispersed in the first host layer 412. The first wavelength conversion particles 411 convert light emitted from the light emitting chip 300 into light of the first wavelength. More specifically, the first wavelength-converted particles 411 can convert blue light emitted from the light emitting chip 300 into green light.

The first host layer 412 is in close contact with the inner surface 122 and the bottom surface 123 of the cavity C. [ Examples of the material used for the first host layer 412 include silicone resins.

The second wavelength converter 420 is disposed on the first wavelength converter 410. The second wavelength converter 420 may be in close contact with the inner surface 122 of the cavity C and the upper surface of the first wavelength converter 410.

The second wavelength converter 420 converts light emitted from the light emitting chip 300 into light having a second wavelength. For example, when blue light is emitted from the light emitting chip 300, the second wavelength converter 420 may convert the blue light into red light.

Accordingly, a part of the blue light emitted from the light emitting chip 300 is not converted, passes through the wavelength converting part 400, and the other part is converted into green light by the first wavelength converting part 410 And another part of the light can be converted into red light by the second wavelength converter 420. Accordingly, the light emitting diode package according to the embodiment can emit white light as a whole.

The second wavelength converter 420 includes a plurality of second wavelength conversion particles 421 and a second host layer 422.

The second wavelength conversion particles 421 are uniformly dispersed in the second host layer 422. The second wavelength conversion particles 421 convert light emitted from the light emitting chip 300 into light of the second wavelength. More specifically, the second wavelength conversion particles 421 can convert blue light emitted from the light emitting chip 300 into red light.

The second host layer 422 is in close contact with the inner surface 122 of the cavity C and the upper surface 121 of the first wavelength conversion portion 410. Examples of the material used for the second host layer 422 include silicone resins. That is, the first host layer 412 and the second host layer 422 may be formed of the same material.

The capping unit 500 covers the wavelength conversion unit 400. The capping part 500 may cover a part of the body part 100. More specifically, the capping portion 500 may cover the upper surface 121 of the receiving portion 120. The capping unit 500 may cover an area between the wavelength conversion unit 400 and the body 100.

More specifically, the capping portion 500 may be directly coated on the upper surface of the wavelength conversion portion 400. Also, the capping part 500 may be coated directly on one side of the body part 100. The capping part 500 may be coated on the area between the wavelength conversion part 400 and the body part 100.

The thickness of the capping portion 500 may be about 0.7 mm to about 0.9 mm.

The capping portion 500 includes an organic material and / or an inorganic material. For example, the capping unit 500 may be formed of only an organic material. In addition, the capping unit 500 may be formed of only an inorganic material. Also, the capping part 500 may include an inorganic material and an organic material at the same time.

In addition, the capping portion 500 may include an inorganic material layer and an organic material layer. In addition, the capping unit 500 may have a single layer structure including an organic material and an inorganic material at the same time.

In addition, the capping unit 500 may include a mixture of an organic material and an inorganic material. For example, the capping portion 500 is mainly formed of an organic material, and the inorganic material may be uniformly dispersed or doped into the organic material.

For example, as shown in the enlarged portion of FIG. 2, the inorganic material may fill the fine pores formed in the organic material. For example, when the organic material is a polymer, fine pores may be formed between the polymer molecules. The inorganic material may be disposed in such pores.

The inorganic material may include silicon oxide (Si _x O _y ), silicon nitride (Si _x N _y ), silicon oxide nitride (Si _x O _y N _z ), silicon oxide carbide (Si _x O _y C _z ) Or niobium oxide (Nb ₅ O ₃ ).

The organic material may be a polymer. The organic material may be a parylene resin such as poly (para-xylene). For example, the parylene-based resin may be represented by the following chemical formula (1).

Formula 1

Here, R1, R2, R3, and R4 may be independently selected from the group consisting of hydrogen, an alkyl group, an aryl group, a heteroaryl group, or an alkoxy group.

More specifically, the organic material is poly (para-xylene), and the inorganic material may be silicon oxide.

In addition, the capping portion 500 may include an organic-inorganic composite. More specifically, the organic-inorganic composite is a complex in which the inorganic material is bonded to the organic material in a molecular form.

For example, when the organic material is poly (para-xylene) and the inorganic material is silicon oxide, the silicon oxide may be bound to the poly (para-xylene) in molecular form. That is, the capping portion 500 may include a silicon oxide-poly (para-xylene) complex as shown below.

Here, R1, R2, R3, and R4 may be independently selected from the group consisting of hydrogen, an alkyl group, an aryl group, a heteroaryl group, or an alkoxy group.

Since the capping part 500 includes the organic-inorganic composite, the bonding force between the inorganic material and the organic material can be increased. That is, the organic-inorganic hybrid material may be formed between the organic material and the inorganic material to increase the bonding force between the organic material and the inorganic material.

The capping unit 500 may further include a product formed by chemically bonding the inorganic material and the organic material. For example, the capping portion 500 may further include a polymer substituted with silicone.

That is, when the organic material is poly (para-xylene) and the inorganic material is silicon oxide, the silicon oxide and poly (para-xylene) react with each other, (Para-xylylene) substituted with silicon such as < RTI ID = 0.0 >

(2)

Here, R1, R2, R3, and R4 may be independently selected from the group consisting of hydrogen, an alkyl group, an aryl group, a heteroaryl group, or an alkoxy group.

Since the capping portion 500 includes the organic material and the inorganic material, the capping portion 500 may have a denser structure. Accordingly, the capping unit 500 can effectively protect the wavelength converting particles 411 and 421 from oxygen and / or moisture from the wavelength converting particles 411 and 421.

The capping unit 500 protects the wavelength conversion unit 400 from physical and / or chemical impacts. More specifically, the capping unit 500 can prevent moisture and / or oxygen from penetrating into the upper surface, the lower surface, and the side surface of the wavelength conversion unit 400.

Accordingly, the capping portion 500 prevents the wavelength conversion particles 411 and 421 from being denatured by moisture and / or oxygen, and improves the reliability and durability of the LED package according to the embodiment have.

FIGS. 3 to 8 are views illustrating a process of fabricating a light emitting diode package according to an embodiment. In the manufacturing method according to the present embodiment, the description of the light emitting diode package described above is referred to. That is, the description of the advanced light emitting diode package can be essentially combined with the description of the present manufacturing method.

Referring to FIG. 3, a plurality of body portions 100 and a plurality of lead electrodes 210 and 220 are formed. The body portions 100 may be formed by a double injection process. The body portions 100 may be connected to each other and supported with each other. That is, the body parts 100 may be connected to each other to form a plate shape as a whole. That is, the body portions 100 may be formed in an array substrate shape.

4 and 5, a mask layer 10 is formed on an upper surface 121 of the body part 100. Referring to FIG. The mask layer 10 is a mask for exposing a part of the body part 100. More specifically, the mask layer 10 is formed on the upper surface 121 of the accommodating portion 120. The mask layer 10 may be formed to expose the inner surfaces 122 and 123 of the cavity C. [

The mask layer (10) surrounds the periphery of the cavity (C). The mask layer 10 may have a closed loop shape when viewed from the top side. The mask layer 10 covers the entire upper surface 121 of the accommodating portion 120.

The mask layer 10 may be disposed only on the upper surface 121 of the receiving portion 120. Alternatively, a hard mask may be disposed on the body portions 100, including a hole exposing only the cavity C. Accordingly, the hard mask may cover an area other than the cavity C.

Examples of the material used for the mask layer 10 include an acrylic resin and the like. As the mask layer 10, a sticky resin can be used. Accordingly, the mask layer 10 can be easily detached from the accommodating portion 120.

In order to form the mask layer 10, the resin composition may be applied only to the upper surface 121 of the accommodating portion 120. Thereafter, the mask layer 10 is formed on the upper surface 121 of the accommodating portion 120, which is cured by ultraviolet rays.

Referring to FIG. 6, the inner surfaces 122 and 123 of the cavity C are selectively surface-treated. More specifically, the inner surfaces 122 and 123 of the cavity C may be surface treated to have hydrophilicity. At this time, the body 100 may be formed of a hydrophobic material. Accordingly, the inner surfaces 122 and 123 of the cavity C are hydrophilic, and the upper surface 121 of the receiving portion 120 may be hydrophobic.

For example, oxygen fluxes are injected into the inner surfaces 122 and 123 of the cavity C, so that the inner surfaces 122 and 123 of the cavity C can be hydrophilized. In addition, the inner surfaces 122 and 123 of the cavity C can be made hydrophilic by a wet method.

Alternatively, the inner surfaces 122 and 123 of the cavity C may be surface-treated to have a hydrophobic property. At this time, the body 100 may be formed of a hydrophilic material. Accordingly, the inner surfaces 122 and 123 of the cavity C are hydrophobic, and the upper surface 121 of the receiving portion 120 can be hydrophilic.

For example, a fluorine-based plasma may be injected onto the inner surfaces 122 and 123 of the cavity C, and the inner surfaces 122 and 123 of the cavity C may be hydrophobic. In addition, the inner surfaces 122 and 123 of the cavity C can be hydrophobicized by a wet method.

In this embodiment, after the light emitting chip 300 is disposed in the cavity C, the inner surfaces 122 and 123 of the cavity C are surface-treated, but the order is not limited. That is, after the inner surfaces 122 and 123 of the cavity C are surface-treated, the light emitting chip 300 may be provided in the cavity C.

Referring to FIG. 7, after the surface treatment process is completed, the mask layer 10 is removed. The mask layer 10 can be removed by desorption.

The inner surfaces 122 and 123 of the cavity C and the second surface of the body portion 100, that is, the upper surface of the receiving portion 120, (121) may have different surface properties.

Then, the wavelength converting portion 400 is formed inside the cavity C. The wavelength converter 400 may be formed by the following process.

A resin composition in which a plurality of wavelength conversion particles 411 and 421 are uniformly dispersed is filled in the cavity C by an ink jet method or the like. Thereafter, the resin composition filled in the cavity (C) may be cured by ultraviolet rays or the like to form the wavelength conversion part (400).

More specifically, the resin composition may have hydrophilicity. At this time, the body 100 has hydrophobicity, and the inner surfaces 122 and 123 of the cavity C can be treated as hydrophilic. In addition, the resin composition may have hydrophobicity. At this time, the body part 100 is hydrophilic, and the inner surfaces 122 and 123 of the cavity C can be treated in a small amount.

Accordingly, the resin composition in the cavity (C) can be brought into close contact with the bottom surface (123) and the inner surface of the cavity (C). More specifically, no air layer is present between the resin composition in the cavity (C) and the inner surfaces (122, 123) of the cavity (C).

Thereafter, the resin composition is cured to form the wavelength conversion portion 400. Accordingly, the wavelength conversion unit 400 can be completely attached to the inner surfaces 122 and 123 of the cavity C.

Also, the light emitting chip 300 and the lead electrodes 210 and 220 may be surface-treated so as to have the same characteristics as the resin composition. Accordingly, the wavelength conversion unit 400 may be in close contact with the light emitting chip 300 and the lead electrodes 210 and 220.

In addition, the upper surface 121 of the receiving portion 120 may have different surface characteristics from the resin composition. For example, when the resin composition has hydrophilicity, the top surface 121 of the receiving portion 120 may have hydrophobicity. Alternatively, when the resin composition has hydrophobicity, the upper surface 121 of the receiving portion 120 may have hydrophilicity.

Therefore, the resin composition does not overflow to the outside by the upper surface 121 of the accommodating portion 120. Particularly, even if the resin composition is densified to some extent more than the volume of the cavity (C), the resin composition can maintain a convex shape without overflowing from the cavity (C).

Accordingly, the resin composition may be filled in the cavity C by a desired amount, and the wavelength conversion part 400 may be formed into a desired shape by curing the resin composition.

That is, when the outer surface of the wavelength conversion part 400 is concave, a smaller amount of the resin composition than the volume of the cavity C may be filled in the cavity C. In addition, when the outer surface of the wavelength conversion part 400 is formed to be convex, a larger amount of the resin composition than the volume of the cavity C may be filled in the cavity C. In addition, when the outer surface of the wavelength conversion part 400 is to be formed flat, the cavity C may be filled with a resin composition having a volume substantially equal to the volume of the cavity C.

Since the upper surface 121 of the accommodating portion 120 and the inner surfaces 122 and 123 of the cavity C have different surface characteristics as described above, the resin composition can be easily filled in the cavity C. have. The wavelength conversion unit 400 may be in close contact with the inner surfaces 122 and 123 of the cavity C and may have a desired outer shape.

Referring to FIG. 8, a capping unit 500 is formed on the upper surface of the wavelength converting unit 400 and the upper surface 121 of the receiving unit 120. The capping unit 500 may be formed by simultaneously depositing an organic material and an inorganic material on the upper surface of the wavelength converting unit 400 and the upper surface 121 of the receiving unit 120.

The organic material and the inorganic material may be deposited by processes such as physical vapor deposition, printing, spin coating, spray coating, and the like.

In addition, the organic material and the inorganic material may be deposited by a chemical vapor deposition process or the like.

For example, the capping portion 500 may be formed by evaporation.

More specifically, the organic material and the inorganic material are evaporated, and the evaporated organic material and the inorganic material are simultaneously supplied to the lower substrate 510, the upper substrate 520, the wavelength conversion unit 400, (540) and the second inorganic protective film (550).

For example, the capping portion 500 may be formed by simultaneously depositing silicon oxide and a parylene-based polymer by an evaporation method.

Accordingly, the capping portion 500 may comprise a mixture of silicon oxide and a parylene-based polymer.

Also, in the course of deposition of silicon oxide and parylene polymer, a silicon oxide-parylene complex can be formed. That is, the capping portion 500 may include a silicon oxide-parylene complex.

Also, in the process of depositing the silicon oxide and the parylene polymer, the silicon oxide and the parylene polymer may be chemically reacted. Accordingly, a parylene-based polymer substituted with silicon can be formed. That is, the capping unit 500 may include a parylene polymer substituted with the silicon.

Since the wavelength conversion unit 400 is in close contact with the inner surface of the cavity, moisture and / or oxygen penetrated into the wavelength conversion unit 400 can be effectively blocked.

The capping unit 500 covers the upper surface of the wavelength conversion unit 400. Also, the capping unit 500 may be coated between the wavelength conversion unit 400 and the body 100.

Therefore, by the capping portion 500, the wavelength conversion particles 411 and 421 can be more effectively protected from external moisture and / or oxygen.

In addition, the body portion 100 may include a first surface and a second surface having different surface characteristics. That is, the inner surface 122 and the bottom surface 123 of the cavity C may have a first surface characteristic, and the upper surface 121 of the body portion 100 may have a second surface characteristic.

The top surface 121 of the wavelength conversion portion 400 and the top surface 121 of the receiving portion 120 may have different surface characteristics.

That is, in the light emitting diode package formed by the manufacturing method of this embodiment, a part of the body part 100 may have hydrophilic property and the other part may have hydrophobic property. That is, when one surface of the body part 100 of the LED package has hydrophilicity and the other surface has hydrophobicity, it can be inferred that such a light emitting diode package is formed by the manufacturing method according to the present embodiment.

In the light emitting diode package formed by the manufacturing method of the present embodiment, a part of the mask layer 10 may remain on the upper surface 121 of the body part 100.

As described above, in the method of manufacturing the LED package according to the embodiment, the inner surface 122 of the cavity C is surface-treated with the first characteristic, the resin composition having the first characteristic is applied to the cavity C, As shown in FIG.

Accordingly, the resin composition can be easily and effectively filled in the cavity C. Thereafter, the resin composition is cured, and the wavelength converting portion 400 or the like may be formed.

Therefore, in the method of fabricating a light emitting diode package according to the embodiment, the wavelength conversion portion 400 can be brought into close contact with the inner surface 122 of the cavity C. That is, a gap such as an air layer may be removed between the inner side surface 122 of the cavity C and the wavelength conversion portion 400.

Accordingly, penetration of oxygen or the like between the body part 100 and the wavelength conversion part 400 is prevented and denaturation of the light emitting chip 300 or the wavelength conversion particles 411 and 421 can be prevented have.

Therefore, the light emitting diode package according to the embodiment can have improved durability.

In addition, as described above, the method of manufacturing a light emitting device according to the embodiment can effectively control the surface shape of the wavelength converter 400. [

That is, since both the resin composition and the inner surfaces 122 and 123 of the cavity C have the first characteristic, when the resin composition is partially filled in the cavity C, May be formed concave.

Alternatively, when the resin composition is filled in the cavity C with an accurate amount, the outer surface of the wavelength conversion portion 400 may be flat.

Alternatively, if the resin composition is excessively filled in the cavity C, the outer surface of the wavelength conversion portion 400 may be convexly formed.

Accordingly, the manufacturing method of the light emitting diode package according to the embodiment can provide the light emitting diode package having the improved durability and performance.

In addition, the light emitting diode package according to the present embodiment is a light emitting element that widely generates light.

9 and 10 are views showing light emitting diode packages according to another embodiment. In the description of these embodiments, reference is made to the above-described LED package and its manufacturing method. That is, the description of the prior art light emitting diode package and the manufacturing method can be essentially combined with the description of this embodiment.

Referring to FIG. 9, the capping portion 501 may also be coated on the outer surface 124 of the body portion 100. More specifically, the capping portion 501 may be coated on the outer surface 124 of the receiving portion 120.

The capping portion 501 may be formed by the following process.

First, a portion of the body 100 and the exposed portions of the lead electrodes 210 and 220 are covered with a mask or the like.

Then, an organic material and / or an inorganic material is deposited on the outer surface of the body part 100, the wavelength conversion part 400, and the mask by a vacuum deposition process. Thereafter, the mask and the like are removed, and the capping unit 501 can be formed.

Referring to FIG. 10, the capping portion 502 may be formed on the entire outer surface of the body 100 and the lead electrodes 210 and 220. At this time, the capping unit 500 may include an open region to expose a part of the lead electrodes 210 and 220.

The capping portion 502 may be formed by the following process.

An organic material and / or an inorganic material is entirely deposited on the upper surface of the wavelength conversion part 400, the outer surface of the body part 100, and the exposed part of the lead electrodes 210 and 220. Thereafter, an open region OR is formed to open a part of the lead electrodes 210 and 220, and the capping portion 502 may be formed.

Thus, the capping portions can be formed in various shapes.

In addition, the features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

Claims (14)

A body portion formed with a cavity;
A light emitting portion disposed in the cavity;
A lead electrode connected to the light emitting portion;
A wavelength conversion unit covering the light emitting unit and disposed in the cavity; And
And a capping unit covering the wavelength conversion unit,
Wherein the capping portion comprises an organic material and an inorganic material,
Wherein the organic material comprises pores,
Wherein the inorganic material is disposed inside the pore,
Wherein the body portion includes a base portion and a receiving portion,
Wherein the cavity is formed in the receiving portion,
Wherein the wavelength converting portion includes a resin composition having a first characteristic and a wavelength converting particle disposed in the resin composition,
The inner surface of the cavity is surface treated with the first characteristic,
Wherein the upper surface of the receiving portion has a second characteristic different from the first characteristic. The method of claim 1,
Wherein the capping portion is formed as a single layer. The light emitting device according to claim 1, wherein the inorganic material comprises silicon oxide, silicon nitride, silicon oxide carbide, silicon oxide nitride, aluminum oxide or niobium oxide. The method according to claim 1,
Wherein the organic material comprises a parylene resin and is represented by the following formula (1).
Formula 1

(Wherein R1, R2, R3 and R4 may be independently selected from the group consisting of hydrogen, an alkyl group, an aryl group, a heteroaryl group or an alkoxy group) The method according to claim 1,
Wherein the capping portion is disposed on a surface of the body portion. The method according to claim 1,
The wavelength converter
A first wavelength converter for covering the light emitting unit; And
And a second wavelength converter for covering the first wavelength converter. The method according to claim 6,
And the capping unit is disposed on the second wavelength converter. The method according to claim 6,
Wherein the first wavelength converter includes a plurality of first light conversion particles for converting light emitted from the light emitting unit into light having a first wavelength,
Wherein the second wavelength converter includes a plurality of second light conversion particles for converting light emitted from the light emitting unit into light having a second wavelength. The method according to claim 1,
Wherein the wavelength converting portion includes a host layer and a wavelength converting particle disposed in the host layer. 10. The method of claim 9,
Wherein the wavelength converting particle comprises a quantum dot. The method according to claim 1,
Wherein the capping portion is disposed on an upper surface of the accommodating portion, an outer surface of the accommodating portion, and an outer surface of the base portion. The method according to claim 1,
Wherein the first characteristic is hydrophobic and the second characteristic is hydrophilic. The method according to claim 1,
Wherein the first characteristic is hydrophilic and the second characteristic is hydrophobic. The method according to claim 1,
Wherein the capping unit comprises poly (parylene-xylene) substituted with silicon, and is represented by the following formula (2).
(2)

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