CN111200049A

CN111200049A - Light emitting element package

Info

Publication number: CN111200049A
Application number: CN202010022623.4A
Authority: CN
Inventors: 比连科.尤里; 朴起延
Original assignee: Seoul Viosys Co Ltd
Current assignee: Seoul Viosys Co Ltd
Priority date: 2018-05-02
Filing date: 2019-05-02
Publication date: 2020-05-26

Abstract

A light-emitting element package, comprising: a substrate provided with a wiring portion; a reflective film provided on the substrate; a light-emitting element mounted on the substrate and connected to the wiring portion; and a cover portion connected to the wiring portion The top surface of the light-emitting element is in contact with and covers the light-emitting element, the cover portion includes an organic polymer having a light transmittance of 85% or more in the wavelength band from ultraviolet to visible light, and the cover portion is in contact with the top of the light-emitting element. surface contact to cover the top surface of the light-emitting element.

Description

Light emitting element package

The present application is a divisional application entitled "light emitting element package" having application date of 2019, 05 and 02, application No. 201980003121.2.

Technical area

The present invention relates to a light emitting element package, and more particularly, to a light emitting element package including a light emitting diode.

Background

A Light Emitting Diode (LED) is a semiconductor Light Emitting element that converts current into Light.

The light emitting diode may be separated into individual chips (chips) and provided in the form of a package (package) for electrical connection with a printed circuit board, a power supply source, or a control member.

Disclosure of Invention

The invention aims to provide a light-emitting element package with high light output efficiency.

The present invention provides a light emitting element package, comprising: a substrate provided with a wiring portion; a reflective film provided on the substrate; a light emitting element mounted on the substrate and connected to the wiring portion; and a cover portion contacting a top surface of the light emitting element and covering the light emitting element, the cover portion including an organic polymer having a light transmittance of 85% or more in an ultraviolet to visible wavelength band, the cover portion contacting the top surface of the light emitting element and covering the top surface of the light emitting element.

A light emitting element package according to an embodiment of the present invention includes: a substrate provided with a wiring portion; a reflective film provided on the substrate; a light emitting element mounted on the substrate and connected to the wiring portion; and a covering portion that is in contact with a top surface of the light emitting element and covers the light emitting element, wherein the covering portion and the reflective film include a Teflon-based organic polymer, and the organic polymer of the reflective film expands.

In an embodiment of the invention, the covering portion may have a light transmittance of about 85% or more in a wavelength band of 250nm to 400 nm.

In an embodiment of the present invention, the light emitting device package may have a sidewall portion provided on the substrate and having a cavity in which the light emitting device is disposed.

In an embodiment of the present invention, the cover portion may cover a top surface of the side wall portion and a top surface of the light emitting element.

In an embodiment of the invention, the covering portion may be in contact with a top surface and a side surface of the light emitting element so as to cover the light emitting element.

In an embodiment of the present invention, an inner side surface constituting the chamber may be inclined in the side wall portion.

In an embodiment of the present invention, at least a part of the reflective film may be provided on the inner side surface.

In an embodiment of the invention, the covering portion may contact and cover the top surface and the side surface of the light emitting element and a part of the substrate.

In an embodiment of the invention, the covering portion may be formed by coating a transparent material on the substrate and the light emitting element and then hardening the transparent material.

In an embodiment of the invention, the covering part may be formed by dropping a light-transmitting material on the substrate and then hardening the light-transmitting material.

In an embodiment of the invention, the covering portion may be provided on the substrate in a hemispherical shape.

In an embodiment of the present invention, the reflective film may have a light reflectance of about 85% or more in a wavelength band of 250nm to 400 nm.

In an embodiment of the invention, the reflective film may have polymer nodes that are interconnected by filaments of the air gap constituting the micropores.

In an embodiment of the present invention, the organic polymer of the reflective film may be expanded polytetrafluoroethylene.

In an embodiment of the invention, at least one of the substrate, the reflective film and the cover may have flexibility.

In an embodiment of the present invention, the wiring portion may include: an upper wiring provided on the top surface of the substrate and connected to the light emitting element; a through wiring penetrating the substrate and connected to the upper wiring; and a lower wiring provided on the bottom surface of the substrate and connected to the through wiring.

In an embodiment of the present invention, the light-emitting element may be a flip chip type.

In an embodiment of the present invention, the reflective film and the cover may have different thicknesses from each other.

Embodiments of the present invention provide a light emitting element with high light extraction efficiency.

Drawings

Fig. 1 is a sectional view showing a light emitting element package according to an embodiment of the present invention.

Fig. 2 is a sectional view showing a light emitting element of the embodiment of the present invention shown in fig. 1.

Fig. 3 is a sectional view showing a light emitting element package according to an embodiment of the present invention.

Fig. 4 is a sectional view showing a light emitting element package according to an embodiment of the present invention.

Fig. 5 is a sectional view showing a light emitting element package according to an embodiment of the present invention.

Fig. 6 is a sectional view showing a light emitting element package according to an embodiment of the present invention.

Detailed Description

While the invention is susceptible to various modifications and alternative forms, specific embodiments have been shown by way of example in the drawings and are herein described in detail. However, it should be understood that the invention is not limited to the particular forms disclosed, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.

Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the accompanying drawings.

Fig. 1 is a sectional view showing a light emitting element package according to an embodiment of the present invention. In fig. 1, for convenience of explanation, some constituent elements are omitted.

Referring to fig. 1, a light emitting device package according to an embodiment of the present invention includes: a substrate 1100 provided with

wiring portions

1500, 1600; a light emitting element 100 mounted on the substrate 1100 and connected to the

wiring portions

1500 and 1600; a cover 1400 contacting a top surface of the light emitting element 100 and covering the light emitting element 100; and a sidewall portion 1200 provided on the substrate 1100, having a cavity (cavity) in an area where the light emitting element 100 is disposed.

Wiring

portions

1500 and 1600 are formed on the substrate 1100, and the light emitting element 100 can be mounted on the top surface thereof. In an embodiment of the present invention, the substrate 1100 may be made of various materials such as inorganic materials, organic materials, metals, and the like. For example, the substrate 1100 may be made of an insulating organic material. Alternatively, the substrate 1100 may be made of SiC, Si, or Al₂O₃And insulating organic/inorganic materials such as AlN and Teflon (Teflon), and may be made of metal. When the substrate 1100 is composed of metal, an insulating layer may be further provided between the

wiring portions

1500 and 1600. When the substrate 1100 is made of a material such as an organic polymer, the substrate 1100 may have flexibility. In an embodiment of the invention, the substrate 1100 may be a printed circuit board printed with the

wiring portions

1500, 1600.

The

wiring portions

1500 and 1600 are electrically connected to the light emitting element 100 in the future and are provided on the substrate 1100. The

wiring portion

1500, 1600 may include:

upper wirings

1510 and 1610 provided on the top surface of the substrate 1100 and connected to the light-emitting element 100 described later; through

wirings

1520 and 1620 provided through the substrate 1100 and connected to the

upper wirings

1510 and 1610; and

lower wirings

1530 and 1630 provided on the bottom surface of the substrate 1100 and connected to the through

wirings

1520 and 1620. The

lower wirings

1530 and 1630 may be electrically connected to other external components in the future.

The light emitting element 100 may be provided on a substrate 1100, and is a flip chip type light emitting diode. However, the light emitting element 100 may be provided in various forms, and may be a lateral type light emitting diode. The light emitting element 100 includes: a light emitting structure 101; a first electrode 150 and a second electrode 160 connected to the light emitting structure, respectively. Hereinafter, the light-emitting element 100 will be described as an example of a flip-chip light-emitting diode.

Fig. 2 is a sectional view illustrating the light emitting device 100 according to the embodiment of the present invention shown in fig. 1. In fig. 2, the light emitting element 100 is shown in an inverted form for convenience of explanation, and the top surface of the light emitting element 100 in fig. 1 is the bottom surface of the light emitting element 100 shown in fig. 2. However, in the embodiments of the present invention, terms indicating directions such as top, bottom, side, upper, lower, and side directions are set for convenience of description and are relative.

Referring to fig. 1 and 2, a light emitting device 100 according to an embodiment of the present invention may include a light emitting structure 101 formed on a base substrate 10.

The base substrate 10 may be, for example, a sapphire substrate, particularly a patterned sapphire substrate. Although the base substrate 10 is preferably an insulating substrate, it is not limited to the insulating substrate.

The light emitting structure 101 may include a first semiconductor layer 110, an active layer 120, and a second semiconductor layer 130, which are sequentially provided.

The first semiconductor layer 110 is a semiconductor layer doped with a first conductive type dopant. The first conductive type dopant may be an n-type dopant. The first conductive type dopant may be Si, Ge, Se, T e, or C.

In an embodiment of the present invention, the first semiconductor layer 110 may include a nitride-based semiconductor material. For example, the first semiconductor layer 110 may be formed of a material having In_xAl_yGa_1-x-yN (x is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, and x + y is more than or equal to 0 and less than or equal to 1). In one embodiment of the present invention, examples of the semiconductor material having the composition formula include GaN, AlN, AlGaN, ingan, InN, InAlGaN, AlInN, and the like. The first semiconductor layer 110 may be formed using the semiconductor material in such a manner as to grow so as to contain n-type dopants of Si, Ge, Sn, Se, Te, and the like.

The first semiconductor layer 110 may include a first sub-semiconductor layer in which a concentration of an impurity is relatively high and a second sub-semiconductor layer in which a concentration of an impurity is relatively low. The first sub-semiconductor layer may correspond to a contact layer connecting the first electrode 150, which will be described later. The first sub-semiconductor layer and the second sub-semiconductor layer can be formed by sequential evaporation, and can be formed by controlling the evaporation conditions. For example, the second sub-semiconductor layer may be formed by performing evaporation at a relatively lower temperature than the first sub-semiconductor layer.

In an embodiment of the present invention, the first semiconductor layer 110 may further have a structure in which two kinds of layers having different band gaps from each other are alternately stacked. The structure formed by alternately stacking two kinds of layers having different band gaps from each other may be a superlattice structure.

Two kinds of layers different from each other in band gap may be alternately formed and include thin film crystalline layers different from each other. In this case, when two layers having different band gaps are alternately stacked, the periodic structure may be constituted as a crystal lattice longer than the substrate unit lattice. The two layers having different band gaps from each other are a layer having a wide band gap (wide band gap) and a layer having a narrow band gap (narrow band gap). In one embodiment of the present invention, the layer with a wide band gap may be Al_xGa_yIn_(1-x-y)N (0. ltoreq. x < 1, 0. ltoreq. y < 1) may be, for example, a GaN layer. The layer with narrow band gap may be Al_xGa_yIn_(1-x-y)N (0. ltoreq. x < 1, 0. ltoreq. y < 1), for example, Ga_yIn_(1-y)N (y is more than 0 and less than or equal to 1). In an embodiment of the invention, at least one of the wide and narrow bandgap layers may include an n-type impurity.

The active layer 120 is disposed on the first semiconductor layer 110 and corresponds to a light emitting layer.

The active layer 120 is a layer that emits light based on a difference in Band Gap (Band Gap) according to an Energy Band of a formation substance of the active layer 120 by the electrons (or holes) injected through the first semiconductor layer 110 and the holes (or electrons) injected through the second semiconductor layer 130 meeting each other. The active layer 120 may emit at least one peak wavelength of ultraviolet, blue, green, and red.

The active layer 120 may be implemented by a compound semiconductor. The active layer 120 may be realized by at least one of group 3-5 and group 2-6 compound semiconductors, for example. A Quantum Well structure may be employed in the active layer 120, and may have a Multi-Quantum Well (Multi-Quantum Well) structure in which a Quantum Well structure and barrier layers are alternately stacked. However, the structure of the active layer 120 is not limited thereto, and may be a Quantum Wire (Quantum Wire) structure, a Quantum Dot (Quantum Dot) structure, or the like.

In an embodiment of the present invention, the quantum well layer may be formed of a material having In_xAl_yGa_1-x-yN (x is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, and x + y is more than or equal to 0 and less than or equal to 1). The barrier layer may be formed of a material having In_xAl_yGa_1-x-yThe semiconductor material of the composition formula of N (0. ltoreq. x.ltoreq.1, 0. ltoreq. y.ltoreq.1, 0. ltoreq. x + y. ltoreq.1) may be provided in a composition ratio different from that of the well layer. Here, the barrier layer may have a wider band gap than that of the well layer.

The well layer and the barrier layer may be formed of at least one of the pairs of AlGaAs/GaAs, InGaAs/GaAs, InGaN/GaN, GaN/AlGaN, AlGaN/AlGaN, InGaN/InGaN, InGaP/InGaP, InGaP/GaP, AlInGaP/InGaP, InP/GaAs, for example. In an embodiment of the present invention, the well layer of the active layer 120 may be implemented by InCaN, and the barrier layer may be implemented by AlGaN-based semiconductor. In an embodiment of the present invention, the indium composition of the well layer may have a higher composition than the indium composition of the barrier layer, and the barrier layer may be free of the indium composition. Further, aluminum may not be contained in the well layer and aluminum may be contained in the barrier layer. However, the composition of the well layer and the barrier layer is not limited thereto.

However, if the thickness of the well layer is too thin, the carrier confinement efficiency is low, and if it is too thick, the carrier may be excessively confined. When the thickness of the barrier layer is too thin, the blocking efficiency of electrons becomes low, and when it is too thick, electrons may be blocked excessively.

By appropriately adjusting the thicknesses of the barrier layer and the well layer, each carrier can be effectively confined in the well layer depending on the wavelength of light and the quantum well structure.

In an embodiment of the present invention, the thickness of each well layer is not particularly limited, and may be the same or different. When the thicknesses of the well layers are the same, since the quantum levels are the same, the light emission wavelength in the well layers can become the same. In this case, a light emission spectrum with a narrow full width at half maximum can be obtained. When the thicknesses of the well layers are different, the emission wavelengths in the well layers become different, whereby the width of the emission spectrum can be widened.

In an embodiment of the present invention, at least one of the plurality of barrier layers may include a dopant, for example, may include at least one of an n-type dopant and a p-type dopant. The barrier layer can be an n-type semiconductor layer when an n-type dopant is added. When the barrier layer is an n-type semiconductor layer, the injection efficiency of electrons injected into the active layer 120 can be increased.

In one embodiment of the present invention, the barrier layers may have various thicknesses, and the uppermost barrier layer may have the same thickness or a greater thickness than the other barrier layers.

When the active layer 120 has a multiple quantum well structure, the composition of the quantum well layer and the barrier layer can be set to match the emission wavelength required for the diode of the light emitting element 100. In an embodiment of the present invention, the compositions of the plurality of well layers may be the same or different. For example, the well layer on the lower side may contain an impurity and the well layer on the upper side may not contain an impurity.

The second semiconductor layer 130 is disposed on the active layer 120.

The second semiconductor layer 130 is a semiconductor layer having a second conductive type dopant having an opposite polarity to the first conductive type dopant. The second conductive type dopant may be a p-type dopant, and the second conductive type dopant may include, for example, Mg, Zn, Ca, Sr, Ba, etc.

In an embodiment of the present invention, the second semiconductor layer 130 may include a nitride-based semiconductor material. The second semiconductor layer 130 may be formed of a material having In_xAl_yGa_1-x-yN (x is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, and x + y is more than or equal to 0 and less than or equal to 1). In an embodiment of the present invention, examples of the semiconductor material having the composition formula include GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, and the like. The second semiconductor layer 130 may utilize the semiconductor material so as to contain p-type dopants of Mg, Zn, Ca, Sr, Ba, and the likeBut is formed by growth.

In an embodiment of the present invention, the insulating film 170 is provided on the first semiconductor layer 110 and the second semiconductor layer 130, respectively.

A first electrode 150 and a second electrode 160 each connected to the first semiconductor layer 110 and the second semiconductor layer 130 are provided over the insulating film 170. Specifically, a portion of the first semiconductor layer 110, the active layer 120, and the second semiconductor layer 130 may be removed, with the result that a portion of the top surface of the first semiconductor layer 110 is exposed. Here, the top surface of the exposed first semiconductor layer 110 may be a top surface of the first sub-semiconductor layer. The first electrode 150 may be provided on the first sub-semiconductor layer exposed in the first semiconductor layer 110. The second electrode 160 may be provided on the second semiconductor layer 130.

In an embodiment of the present invention, the first electrode 150 may include: a first contact electrode 150C directly contacting the top surface of the first semiconductor layer 110; the first pad electrode 150P is connected through a contact hole formed through the insulating film 170. The second electrode 160 may include: a second contact electrode 160C directly contacting the top surface of the second semiconductor layer 130; the second pad electrode 160P is connected through a contact hole formed through the insulating film 170.

However, the structures of the light emitting structure 101, the first electrode 150, and the second electrode 160 are not limited thereto, and may be provided in various forms. For example, the light emitting structure 101 may have one or more mesa structures, and the arrangement of the first and

second electrodes

150 and 160 may be provided in different positions or different shapes according to the mesa structures.

In an embodiment of the present invention, the first electrode 150 and the second electrode 160 may be made of various metals such as Al, Ti, Cr, Ni, Au, Ag, Ti, Sn, Ni, Cr, W, Cu, or alloys thereof. The first electrode 150 and the second electrode 160 may be formed in a single layer or multiple layers.

Referring to fig. 1 again, the first electrode 150 and the second electrode 160 are connected to the

wiring portions

1500 and 1600, respectively. The

wiring portion

1500, 1600 may include: a first wiring 1500 connected to the first electrode 150; the second wiring 1600 is connected to the second electrode 160. The first wire 1500 may include a first upper wire 1510, a first through wire 1520, and a first lower wire 1530, and the second wire 1600 may include a second upper wire 1610, a second through wire 1620, and a second lower wire 1630. The first electrode 150 may be electrically connected to the first upper wiring 1510 through a conductive type adhesive member 1700, and the second electrode 160 may be connected to the second upper wiring 1610 through the conductive type adhesive member 1700.

In an embodiment of the present invention, the conductive adhesive member 1700 may be provided with a conductive paste such as solder paste or silver paste, or a conductive resin, or may be provided with an anisotropic conductive film.

The sidewall 1200 is provided on the top surface of the substrate 1100 and formed to penetrate a chamber having a predetermined size. The portion forming the chamber is a portion where the light emitting element 100 is provided, and the light emitting element 100 is mounted on the substrate 1100 exposed in the chamber. Here, on the substrate 1100, a part of the first and

second wirings

1500 and 1600 is also provided in a region where the cavity is formed, whereby a part of the first and

second wirings

1500 and 1600 is exposed, and the light emitting element 100 is mounted and connected on the exposed first and

second wirings

1500 and 1600.

The sidewall 1200 may be made of an organic material, an inorganic material, and/or a metal. May be composed of the same material as the substrate 1100 or different materials from each other. For example, the substrate 1100 may be made of an organic material, and the sidewall 1200 may be made of a material having high reflectance, for example, an organic material, an inorganic material, or a metal having high reflectance. However, the material of the side wall portion 1200 is not limited thereto. When the sidewall 1200 is made of a material such as an organic polymer, the sidewall 1200 may have flexibility.

In an embodiment of the present invention, the inner side surface forming the chamber may be provided in an inclined form. Since the inner side surface is provided in an inclined manner, light emitted from the light-emitting element 100 can be emitted at a predetermined irradiation angle in the upward direction without interference. When the side wall 1200 is made of a reflective material, the efficiency of emitting light emitted from the light-emitting element 100 in the upward direction can be improved.

The cover portion 1400 is provided on the light emitting element 100 and the side wall portion 1200, protecting the light emitting element 100. The cover portion 1400 may cover all or a portion of the top surface of the sidewall portion 1200.

Although not illustrated, an adhesive may be provided between the cover portion 1400 and the side wall portion 1200, and the cover portion 1400 is stably adhered to the side wall portion 1200 and the light emitting element 100 by the adhesive. The adhesive may be a thermosetting adhesive and/or a photo-curable adhesive.

The cover 1400 is in direct contact with the top surface of the light emitting element 100, and thus no empty space occurs between the cover 1400 and the light emitting element 100. In other words, there is no substantial air gap between the cover 1400 and the light emitting element 100. This minimizes light loss due to scattering or reflection in the process of light emitted from the light-emitting element 100 entering the cover 1400 through the air layer.

In an embodiment of the invention, the distance from the surface of the substrate 1100 to the top surface of the light emitting device 100 is substantially the same as the distance from the surface of the substrate 1100 to the top surface of the sidewall 1200. When the cover portion 1400 is provided in such a manner as to cover the top surface of the light emitting element 100 and the top surface of the side wall portion 1200 entirely, the cover portion 1400 can cover the light emitting element 100 and the side wall portion 1200 flat without bending since there is virtually no height difference between the top surface of the light emitting element 100 and the top surface of the side wall portion 1200. If there is a height difference between the top surface of the light emitting element 100 and the top surface of the side wall portion 1200, the top surface of the light emitting element 100 and the cover portion 1400 do not contact each other, or a portion where the top surface of the side wall portion 1200 and the cover portion 1400 do not contact each other may occur. In the former case, since an air gap is formed between the top surface of the light emitting element 100 and the cover portion 1400, light extraction efficiency is reduced, and in the latter case, the cover portion 1400 may not be stably attached to the side wall portion 1200.

In an embodiment of the invention, the covering portion 1400 may be made of a light transmissive organic polymer material. The material of the cover 1400 that allows light from the light-emitting element 100 to transmit to the maximum may be selected, and for example, the cover 1400 may have a light transmittance of about 80% in the ultraviolet to visible light region. In an embodiment of the invention, the cover 1400 may have a light transmittance of about 85% or more in a wavelength band of about 250nm to about 400 nm.

The covering portion 1400 may further have flexibility. In particular, the covering portion 1400 is made of a material such as an organic polymer, and thus flexibility can be easily obtained. In an embodiment of the invention, the covering portion 1400 may be made of organic polymer of the same series as the reflective film 1300, for example, teflon organic polymer. In this case, the covering portion 1400 may be made of teflon.

In the light emitting device package of the present embodiment, the covering portion 1400 may be formed in a film shape having a predetermined thickness, and attached to the light emitting device 100 and the sidewall 1200 with an adhesive interposed therebetween.

The light emitting element package having the structure has an effect of improving light extraction efficiency from the light emitting element 100 since a space is not provided between the cover 1400 and the light emitting element 100.

In addition, according to an embodiment of the invention, at least a portion of the substrate 1100, the side arm 1200 and the covering portion 1400 may be provided to have flexibility, thereby enabling the entire light emitting device package to have flexibility. The light emitting device package according to an embodiment of the present invention can be applied to various flexible devices such as a flexible display.

In addition, according to an embodiment of the present invention, a large number of light emitting element packages can be simultaneously manufactured in a chip-on-board manner. For example, in the case where a plurality of light emitting element packages are provided in a chip-on-board manner, a covering portion having an area capable of covering the plurality of light emitting element packages at the same time may be prepared in a film form and then attached to the plurality of light emitting element packages at one time.

Modes for carrying out the invention

The light emitting element package according to an embodiment of the present invention may further include an additional component capable of improving light extraction efficiency, in addition to the above configuration.

In the following examples, for convenience of explanation, points different from the above-described examples will be mainly explained, and parts not explained follow the examples explained before.

Referring to fig. 3, the light emitting device package according to an embodiment of the present invention may further include a reflective film 1300 provided on the substrate 1100 and the sidewall 1200.

The reflective film 1300 is provided on at least a portion of the substrate 1100 exposed by the cavity of the sidewall portion 1200, the first and second

upper wirings

1510 and 1610 exposed, and the inner side surface of the sidewall portion 1200. When light emitted from the light emitting element 100 travels in a lateral direction or a downward direction, not in the upward direction, the reflective film 1300 reflects the light in the upward direction, thereby improving light extraction efficiency.

In an embodiment of the present invention, the reflective film 1300 may not be provided since light does not travel directly below the light emitting element 100, but is not limited thereto. For example, it may be provided on the entire top surface of the substrate 1100 exposed to the chamber, the top surfaces of the first and second

upper wirings

1510 and 1610, and the entire inclined surface of the sidewall portion 1200, including the lower side of the light emitting element 100, in order to maximize light emitting efficiency. In this case, however, the reflective film 1300 is not provided at a portion where the first and

second electrodes

150 and 160 and the first and second

upper wirings

1510 and 1610 of the light emitting element 100 are connected to each other.

In an embodiment of the invention, the reflective film 1300 may be made of a reflective organic polymer material. The reflective film 1300 may be selected from materials that allow light from the light emitting element 100 to be maximally reflected. For example, the reflective film 1300 may have a light reflectance of about 80% in the ultraviolet to visible light region. In an embodiment of the present invention, the reflective film 1300 may have a light reflectivity of about 85% or more in a wavelength band of about 250nm to about 400 nm. In an embodiment of the present invention, the reflective film 1300 may have a light reflectivity of about 90% or more particularly in the UVC region, i.e., in a wavelength band of about 100nm to 280 nm.

In order to make the organic polymer material reflective, the organic polymer may be composed of a single film or multiple films, and at least one of the films may be expanded. In addition, the organic polymer may have polymer nodes (polymer nodes) that are connected to each other through filaments (fibrils) constituting air gaps of the micropores. The organic polymer material having such structural reflectivity may be various, for example, a teflon system may be used, and for example, the organic polymer material used for the reflective film 1300 may be made of expanded polytetrafluoroethylene (polytetrafluoroethylene).

In an embodiment of the invention, the same series of organic polymers, for example, teflon organic polymers, may be used for the covering portion 1400 or the reflective film 1300. However, the cover 1400 requires high light transmittance, and the reflective film 1300 requires high reflectance, and the light transmittance or reflectance can be controlled by appropriate additional measures. For example, the reflective film 1300 may improve reflectivity by using an extension expanded polymer node forming process or the like. Alternatively, even if the reflective film 1300 or the cover 1400 is formed using the same material and/or the same process, the transmittance or reflectance may be different from each other by making the thicknesses thereof different. For example, by forming the reflective film 1300 to have a thickness greater than that of the cover portion 1400, the reflectance of the reflective film 1300 can be improved, and the transmittance of the cover portion 1400 can be maintained.

In an embodiment of the present invention, the reflective film 1300 may include a coating film including a material having a high reflectivity, in addition to the organic polymer material. Alternatively, the reflective film 1300 contains a material having a high reflectance as a filler of an organic polymer material. In this case, the material having high reflectance may be titanium dioxide.

In the light emitting element package of the present embodiment, the reflective film 1300 is provided as a high molecular material in an uncured fluid form, is provided on the substrate 1100 and the side wall portion 1200, and is formed by curing. At this time, the reflective film 1300 may be patterned by various processes as needed. Alternatively, the reflective film 1300 may be formed by a printing method. But not limited thereto, the reflective film 1300 may be manufactured in a film form having a predetermined thickness, and attached on the top surface and the sidewall 1200 of the substrate 1100.

In an embodiment of the present invention, the reflective film 1300 is made of an organic polymer material, so that the reflective film 1300 can have flexibility. According to an embodiment of the invention, at least a portion of the substrate 1100, the sidewall 1200 and the cover 1400 may also have flexibility, and thus the entire light emitting device package may also have flexibility. The light emitting device package according to an embodiment of the present invention can be applied to various flexible devices such as a flexible display.

In addition, according to an embodiment of the present invention, the reflective film 1300 can also simultaneously manufacture a large number of light emitting device packages in a chip-on-board manner. For example, in the case where a plurality of light emitting element packages are provided in a chip-on-board manner, the reflective film 1300 may also be formed simultaneously on the plurality of light emitting element packages.

In the light emitting element package of an embodiment of the present invention, the covering portion 1400 may be modified in various forms within the scope of the concept of the present invention.

Referring to fig. 4, the cover portion 1400 is provided on the light emitting element 100 and the sidewall portion 1200, and may cover not only the top surface of the light emitting element 100 but also the side surface of the light emitting element 100. In other words, the cover 1400 is in direct contact with the top surface and the side surface of the light emitting element 100, and there is no empty space, i.e., air gap, between the cover 1400 and the top surface of the light emitting element 100 and between the cover 1400 and the side surface of the light emitting element 100.

In an embodiment of the present invention, the covering portion 1400 covers the entire top surface of the sidewall portion 1200, but is not limited thereto, and may cover a part of the top surface of the sidewall portion 1200.

In the present embodiment, the cover portion 1400 covers the top surface of the sidewall portion 1200, the reflective surface corresponding to the inner side surface of the sidewall portion 1200, the side surface and the top surface of the light emitting element 100, thereby minimizing an air gap between the cover portion 1400 and other constituent elements. By minimizing the air gap, not only the efficiency of light emission from the top surface of the light emitting element 100 but also the efficiency of light emission from the side surface of the light emitting element 100 can be improved.

In addition, in the present embodiment, the air enclosed by the cover portion 1400 is minimized, so that the expansion of the air due to the heat generation of the light emitting element 100 can also be minimized. Thus, the cover 1400 can stably protect the light emitting element 100 while improving light extraction efficiency.

In the light emitting element package of the present embodiment, since the covering portion 1400 is composed of an organic polymer material, the covering portion 1400 can be formed in various forms. For example, the cover portion 1400 may be formed by applying or printing a polymer material in the form of an uncured fluid to the light emitting element 100 and the sidewall 1200, and then curing the polymer material.

At this time, after coating the polymer material in the form of uncured fluid, in order to minimize air gaps and moisture, a first baking is performed at about 120 degrees to about 180 degrees, for example, about 150 degrees. Thereafter, in order to make the polymer material have a predetermined shape, the second baking is performed at a higher temperature than the first baking temperature. In the case of the second baking, it may be performed at about 250 to 350 degrees, for example, about 300 degrees. In an embodiment of the present invention, in order to prevent a thickness reduction due to rapid condensation of the polymer material during heating and a pressure applied thereto, the temperature rising speed at the first baking and the second baking may be controlled at a predetermined speed, for example, 40 degrees/minute to 60 degrees/minute or 50 degrees/minute.

In the present embodiment, the cover 1400 can be formed without an additional adhesive.

In this manner, the intensity of light, the traveling direction, for example, the emission angle, and the like can be controlled by controlling the thickness, the shape, and the like of the covering portion 1400 when forming the covering portion 1400.

In an embodiment of the present invention, the sidewall 1200 is not always provided, and the sidewall 1200 may be omitted as required.

Referring to fig. 5, a reflective film 1300 is provided on a substrate 1100. The reflective film 1300 may be provided on the entire surface of the substrate 1100 except for the connection portion of the light emitting element 100 and the

wiring portions

1500 and 1600, and may be provided on a portion of the substrate 1100 as shown in the figure. The light emitting element 100 is connected to the

wiring portions

1500 and 1600 formed on the substrate 1100 at portions where the reflective film 1300 is not provided.

In the present embodiment, the cover 1400 is provided on the light emitting element 100 and the reflective film 1300, and may be provided to cover not only the top surface of the light emitting element 100 but also the side surface of the light emitting element 100. In other words, the covering portion 1400 directly contacts the top surface and the side surface of the light emitting device 100. Thus, there is no empty space, i.e., air gap, between the cover 1400 and the top surface of the light emitting element 100 and between the cover 1400 and the side surface of the light emitting element 100.

In the present embodiment, the cover portion 1400 is shown to cover the top surface of the reflective film 1300 and not to cover the top surface of the exposed substrate 1100, but it is merely an example. In other embodiments of the present invention, the covering portion 1400 may be extended to the exposed substrate 1100, thereby being able to cover all of the top surface of the exposed substrate 1100, the top surface of the reflective film 1300, and the side surfaces and the top surface of the light emitting element 100.

In the present embodiment, the cover portion 1400 covers the top surface of the sidewall portion 1200, the reflective surface, and the side and top surfaces of the light emitting element 100, thereby minimizing an air gap between the cover portion 1400 and other constituent elements. By minimizing the air gap, not only the efficiency of light emission from the top surface of the light emitting element 100 but also the efficiency of light emission from the side surface of the light emitting element 100 can be improved.

In addition, in the case of the present embodiment, the air in the portion enclosed by the cover 1400 is minimized, and thus the expansion of the air due to the heat generation of the light emitting element 100 can also be minimized. Thus, the cover 1400 can stably protect the light emitting element 100 while improving light extraction efficiency.

In addition, when the light emitting element 100 having a large pointing angle is used, light traveling in a lateral direction may be more important than in an upward direction. At this time, by using the structure in which the side wall portion 1200 is removed, the light traveling direction is prevented from being restricted by the side wall portion 1200.

In the light emitting device package of the present embodiment, the covering portion 1400 may be formed by applying or printing a high molecular material in a fluid form without curing on the substrate 1100 on which the light emitting device 100 and the reflective film are formed, and then curing. In the present embodiment, the cover 1400 can be formed without an additional adhesive.

In the present embodiment, the intensity, the traveling direction, and the like of light may also be controlled by controlling the thickness, the shape, and the like of the covering portion 1400 when forming the covering portion 1400.

In an embodiment of the present invention, the cover 1400 may be provided in a form that no air gap is provided between the cover 1400 and the light emitting element 100.

Referring to fig. 6, a reflective film 1300 without a sidewall portion is provided on a substrate 1100. The cover 1400 is provided over the light-emitting element 100 and the reflective film 1300, and is provided so as to fill the space between the substrate 1100 and the light-emitting element 100. In other words, in the above-described embodiment, the covering part 1400 is provided in direct contact with the top surface and the side surface of the light emitting element 100 and is not provided below the light emitting element 100, but in the present embodiment, a difference is that the covering part 1400 is provided not only on the top surface and the side surface of the light emitting element 100 but also below the light emitting element 100.

Therefore, the cover portion 1400 is formed by dropping an uncured polymer material in a fluid form, filling the liquid below the light-emitting element 100 and the substrate 1100 while covering the upper and side portions of the light-emitting element 100, and then curing the liquid. In the present embodiment, the cover 1400 can be formed without an additional adhesive. In this case, since the cover 1400 is formed in such a manner that the polymer material in the form of uncured fluid is dropped by the droplets, it may be provided in a substantially hemispherical shape.

In the present embodiment, the covering part 1400 covers the whole light emitting element 100, and no air gap is provided between the light emitting element 100 and the substrate 1100 or between the light emitting element 100 and the covering part 1400. This improves the efficiency of light emission not only to the top surface but also to the side surface of the light-emitting element 100.

In addition, the intensity of light, the traveling direction, for example, the emission angle, and the like can be controlled by controlling the thickness, the shape, and the like of the covering portion 1400 when forming the covering portion 1400. In particular, when the cover 1400 is provided in a hemispherical shape, the cover 1400 may have a lens-like shape, or control of the traveling direction of light such as widening the pointing angle and increasing or decreasing the amount of light in a specific direction may be performed according to the shape. In the case of the present embodiment, since the side wall portion 1200 is not provided, the degree of freedom in manufacturing the shape of the covering portion 1400 is high, and thus the traveling direction of light can be variously changed.

Although the preferred embodiments of the present invention have been described above, those skilled in the art or persons having ordinary knowledge in the art can understand that various modifications and changes can be made to the present invention without departing from the spirit and scope of the present invention as set forth in the claims of the present application.

Therefore, the technical scope of the present invention is not limited to the details described in the specification, but should be determined by the claims.

Claims

1. A light-emitting element package, comprising:

a substrate, provided with a wiring portion;

a reflective film provided on the substrate;

a light-emitting element mounted on the substrate and connected to the wiring portion; and

a covering part, in contact with the top surface of the light-emitting element, and covering the light-emitting element,

The covering portion includes an organic polymer having a transmittance of 85% or more in the wavelength band of ultraviolet light to visible light, and the covering portion is in contact with the top surface of the light-emitting element to cover the top surface of the light-emitting element.

2. The light emitting element package according to claim 1, wherein,

The covering portion transmits 85% or more of light in the wavelength band of 250 nm to 400 nm.

3. The light emitting element package according to claim 1, wherein

The cover part covers the top surface of the light emitting element and the top surface of the side wall part, and is provided to be flat.

4. The light emitting element package according to claim 3, wherein,

The covering portion is provided as a film having a predetermined thickness.

5. The light emitting element package according to claim 1, wherein,

The organic polymer of the covering portion is a stretched Teflon-based organic polymer.

6. The light emitting element package according to claim 1, wherein,

The light emitting element package has a side wall portion provided on the substrate and having a cavity in which the light emitting element is arranged.

7. The light emitting element package according to claim 6, wherein,

The height of the top surface of the side wall portion is the same as the height from the top surface of the substrate to the top surface of the light emitting element.

8. The light emitting element package according to claim 6, wherein,

At least a part of the substrate, the side wall portion and the covering portion has flexibility.

9. The light emitting element package according to claim 6, wherein,

In the side wall portion, the inner surface constituting the chamber is inclined.

10. The light emitting element package according to claim 1, wherein,

The wiring part includes:

an upper wiring, provided on the top surface of the substrate, and connected with the light-emitting element;

a through wiring that penetrates the substrate and is connected to the upper wiring; and

A lower wiring is provided on the bottom surface of the substrate, and is connected to the through wiring.