KR100575442B1 - 세륨계 연마재 및 세륨계 연마재 슬러리 - Google Patents
세륨계 연마재 및 세륨계 연마재 슬러리 Download PDFInfo
- Publication number
- KR100575442B1 KR100575442B1 KR1020037016599A KR20037016599A KR100575442B1 KR 100575442 B1 KR100575442 B1 KR 100575442B1 KR 1020037016599 A KR1020037016599 A KR 1020037016599A KR 20037016599 A KR20037016599 A KR 20037016599A KR 100575442 B1 KR100575442 B1 KR 100575442B1
- Authority
- KR
- South Korea
- Prior art keywords
- cerium
- based abrasive
- abrasive
- mass
- polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
- C01F17/224—Oxides or hydroxides of lanthanides
- C01F17/235—Cerium oxides or hydroxides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/60—Compounds characterised by their crystallite size
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/10—Solid density
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Inorganic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
| 연마재 특성 | ||||
| 평균 입자 사이즈 (㎛) | 침강부피밀도(g/ml) | 1차입자사이즈 (nm) | 비표면적(m2/g) | |
| 실시예1 | 1.86 | 0.87 | 60 | 2.8 |
| 실시예2 | 1.55 | 0.91 | 70 | 2.3 |
| 비교예1 | 1.78 | 0.75 | 30 | 5.5 |
| 비교예2 | 2.19 | 1.05 | 110 | 1.6 |
| 연마특성 | ||||||
| 연마 개시 후 30분 | 연마 개시 후 240분 | |||||
| 연마속도 (㎛/분) | 긁힘수 (1표면 당) | 표면 조도Ra (옹스트롬) | 연마속도 (㎛/분) | 긁힘수 (1표면 당) | 표면 조도Ra (옹스트롬) | |
| 실시예1 | 2.35 | 0.17 | 12 | 2.28 | 0.08 | 11 |
| 실시예2 | 2.29 | 0.08 | 10 | 2.06 | 0.17 | 9 |
| 비교예1 | 1.99 | 0.08 | 9 | 1.18 | 0.08 | 8 |
| 비교예2 | 1.69 | 1.50 | 15 | 0.94 | 1.08 | 13 |
Claims (14)
- 주성분으로서 산화 세륨을 함유하는 세륨계 연마재로서, 상기 연마재가 10질량%의 양으로 물 중에 분산될 때, 0.8g/ml∼1.0g/ml 범위의 침강 부피 밀도를 갖는 것을 특징으로 하는 세륨계 연마재.
- 제 1항에 있어서, 40nm∼80nm 범위의 1차 입자 사이즈를 갖는 것을 특징으로 세륨계 연마재.
- 제 1항 또는 제 2항에 있어서, 2m2/g∼5m2/g 범위의 비표면적을 갖는 것을 특징으로 하는 세륨계 연마재.
- 제 1항 또는 제 2항에 있어서, 산화 세륨의 양을 기준으로, Ce가 35질량%로 함유되는 것을 특징으로 하는 세륨계 연마재.
- 제 1항에 기재된 세륨계 연마재를 5질량%∼30질량% 범위의 농도로 분산매 중에 분산시킴으로써 형성되는 것을 특징으로 하는 세륨계 연마재 슬러리.
- 제 5항에 있어서, 분산매가 물인 것을 특징으로 하는 세륨계 연마재 슬러리.
- 제 5항에 있어서, 분산매가 유기 용제인 것을 특징으로 하는 세륨계 연마재 슬러리.
- 제 7항에 있어서, 유기 용제가 알콜류, 다가 알콜류, 아세톤류, 및 테트라히드로푸란류로 이루어지는 군으로부터 선택된 1종 이상을 포함하는 것을 특징으로 하는 세륨계 연마재 슬러리.
- 제 5항 내지 제 8항 중 어느 한 항에 있어서, 계면활성제를 함유하는 것을 특징으로 하는 세륨계 연마재 슬러리.
- 제 9항에 있어서, 계면활성제가 음이온 계면활성제 및 비이온 계면활성제로 이루어지는 군으로부터 선택된 1종 이상인 것을 특징으로 하는 세륨계 연마재 슬러리.
- 제 10항에 있어서, 음이온 계면활성제가 저분자량 또는 고분자량 카르복실레이트류, 술포네이트류, 술페이트류, 및 포스페이트류로 이루어지는 군으로부터 선택된 1종 이상인 것을 특징으로 하는 세륨계 연마재 슬러리.
- 제 10항에 있어서, 비이온 계면활성제가 폴리옥시에틸렌알킬페놀에테르, 폴리옥시에틸렌알킬에테르, 및 폴리옥시에틸렌지방산에스테르로 이루어지는 군으로부터 선택된 1종 이상인 것을 특징으로 하는 세륨계 연마재 슬러리.
- 제 5항 내지 제 8항 중 어느 한 항에 기재된 세륨계 연마재 슬러리를 사용하는 것을 특징으로 하는 유리 기판의 연마방법.
- 제 13항에 기재된 유리 기판의 연마방법을 사용하는 단계를 포함하는 것을 특징으로 하는 유리 기판의 제조방법.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001350968 | 2001-11-16 | ||
| JPJP-P-2001-00350968 | 2001-11-16 | ||
| US33161401P | 2001-11-20 | 2001-11-20 | |
| US60/331,614 | 2001-11-20 | ||
| PCT/JP2002/011925 WO2003042321A1 (en) | 2001-11-16 | 2002-11-15 | Cerium-based polish and cerium-based polish slurry |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20040052209A KR20040052209A (ko) | 2004-06-22 |
| KR100575442B1 true KR100575442B1 (ko) | 2006-05-03 |
Family
ID=26624550
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020037016599A Expired - Lifetime KR100575442B1 (ko) | 2001-11-16 | 2002-11-15 | 세륨계 연마재 및 세륨계 연마재 슬러리 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20040198191A1 (ko) |
| EP (1) | EP1444308B1 (ko) |
| KR (1) | KR100575442B1 (ko) |
| WO (1) | WO2003042321A1 (ko) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005268665A (ja) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
| CN102925106A (zh) * | 2012-11-14 | 2013-02-13 | 内蒙古科技大学 | 一种稀土抛光粉及其制备方法 |
| CN103361030A (zh) * | 2013-07-23 | 2013-10-23 | 内蒙古科技大学 | 一种含镨超细高精密度稀土抛光粉及其制备方法 |
| KR102463863B1 (ko) | 2015-07-20 | 2022-11-04 | 삼성전자주식회사 | 연마용 조성물 및 이를 이용한 반도체 장치의 제조 방법 |
| JP6839767B2 (ja) * | 2017-09-11 | 2021-03-10 | 昭和電工株式会社 | セリウム系研磨材用原料の製造方法、及びセリウム系研磨材の製造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997029510A1 (fr) * | 1996-02-07 | 1997-08-14 | Hitachi Chemical Company, Ltd. | Abrasif d'oxyde de cerium, microplaquette semi-conductrice, dispositif semi-conducteur, procede pour les produire et procede pour polir les substrats |
| US5962343A (en) * | 1996-07-30 | 1999-10-05 | Nissan Chemical Industries, Ltd. | Process for producing crystalline ceric oxide particles and abrasive |
| EP2164095A1 (en) * | 1996-09-30 | 2010-03-17 | Hitachi Chemical Co., Ltd. | Cerium oxide abrasive and method of polishing substrates |
| SG72802A1 (en) * | 1997-04-28 | 2000-05-23 | Seimi Chem Kk | Polishing agent for semiconductor and method for its production |
| JPH11181403A (ja) * | 1997-12-18 | 1999-07-06 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
| JP3983949B2 (ja) * | 1998-12-21 | 2007-09-26 | 昭和電工株式会社 | 研磨用酸化セリウムスラリー、その製造法及び研磨方法 |
| EP1201607B1 (en) * | 1999-05-28 | 2014-07-30 | Hitachi Chemical Company, Ltd. | Cerium oxide abrasive, method for polishing substrate using the same and method for manufacturing semiconductor device |
| JP2001031951A (ja) * | 1999-07-22 | 2001-02-06 | Hitachi Chem Co Ltd | 研磨剤及び基板の研磨方法 |
-
2002
- 2002-11-15 US US10/482,776 patent/US20040198191A1/en not_active Abandoned
- 2002-11-15 KR KR1020037016599A patent/KR100575442B1/ko not_active Expired - Lifetime
- 2002-11-15 EP EP02785937A patent/EP1444308B1/en not_active Expired - Lifetime
- 2002-11-15 WO PCT/JP2002/011925 patent/WO2003042321A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| US20040198191A1 (en) | 2004-10-07 |
| EP1444308A1 (en) | 2004-08-11 |
| WO2003042321A1 (en) | 2003-05-22 |
| EP1444308A4 (en) | 2009-06-10 |
| KR20040052209A (ko) | 2004-06-22 |
| EP1444308B1 (en) | 2011-01-12 |
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