JPH118260A - Method for manufacturing resin-encapsulated semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To produce a plastic BGA or the like by forming a circuit portion on a conductive substrate by a plating method, mounting a semiconductor element, sealing the resin, and separating the semiconductor device from the conductive substrate. In the above, there is provided a manufacturing method capable of performing the process in a state where a plurality of impositions are performed (a series of states). SOLUTION: A plurality of unit circuit portions for one semiconductor device are formed on a conductive substrate in an imposed state,
After mounting a semiconductor element for each circuit portion of the conductive substrate and making necessary electrical connections, sequentially with resin sealing for each semiconductor device, at least a portion with a sealing resin portion of the semiconductor device. A connecting portion made of a sealing resin integrally connected is provided to connect adjacent semiconductor devices, and the plurality of semiconductor devices to be processed are all resin-sealed in a state of being connected by the sealing resin. A resin sealing step, a peeling step of peeling off from the conductive substrate in a state where all of the plurality of semiconductor devices to be processed are connected by the sealing resin, and after peeling, for separating each semiconductor device from each other, And a trimming step of removing a connecting portion made of a sealing resin.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device using a circuit member for a surface-mount type resin-encapsulated semiconductor device having a circuit portion formed thin by plating. PBGA (Plastic Bal)
The present invention relates to a method of manufacturing a semiconductor device using a circuit member for a (Grid Array) type semiconductor device.

[0002]

2. Description of the Related Art In recent years, semiconductor devices have become more and more highly integrated and highly functional as represented by LSI ASICs due to the trend toward higher performance and lighter, thinner and smaller electronic devices (current trend). Accordingly, semiconductor devices are increasingly required to have more terminals (pins). Multi-terminal (pin) ICs, especially ASICs represented by gate arrays and standard cells, microcomputers, DSPs (Di
In order to make a semiconductor device such as a digital signal processor (QFP), a QFP (Q
A surface mount type package such as uadFlat Package) is used, and a QFP of up to 300-pin class has been put to practical use. QFP is shown in FIG.
As shown in FIG. 4A, a semiconductor element 420 is mounted on a die pad 411, and a single-layer lead frame 410 shown in FIG. 4B is used. After connecting the tip 412A of the inner lead and the terminal (electrode pad) 421 of the semiconductor element 420 with a wire 430, sealing is performed with a resin 440, the dam bar portion is cut, and the outer lead 413 is bent into a gull-wing shape. It is manufactured. Such QFP
Has a structure in which outer leads for electrically connecting to an external circuit are provided in four directions of a package, and has been developed as a structure capable of coping with multi-terminals (pins). The single-layer lead frame 410 used here is usually formed by etching a metal plate having high conductivity and high strength, such as Kovar, 42 alloy (42% Ni-iron), or a copper alloy, using photolithography technology. It was fabricated by processing into a shape as shown in FIG. 4B by a processing method, a stamping method, or the like.

[0003] However, in recent years, higher speed and higher performance (function) of signal processing of a semiconductor element require more terminals. On the other hand, the QFP can cope with further increase in the number of terminals by reducing the pitch of the external terminals. However, when the pitch of the external terminals is reduced, it is necessary to reduce the width of the external terminals themselves. Will be done. As a result, a problem arises in the positional accuracy or flatness accuracy of the terminal forming (gull-wing). In QFP, the outer lead pitch is 0.4 m
As the pitch is further reduced to m and 0.3 mm, the mounting process at these narrow pitches becomes more difficult, and there are obstacles (problems) such as the need to realize advanced board mounting technology. In addition, there is a processing limit in manufacturing the tip of the inner lead at a narrow pitch. In the end, in view of processing limitations and mountability, increasing the number of pins required an increase in the size of the package, and the size reduction of the package was beginning to reach its limits.

In order to avoid the mounting efficiency and mounting problems of these conventional QFP packages, a plastic package semiconductor called a BGA (Ball Grid Array) which is a surface mounting type package in which solder balls are replaced with external terminals of the package. Equipment has been developed. BGA is a generic name of a surface-mounted semiconductor device (plastic package) in which solder balls as external terminals are arranged in a matrix (array) on the back surface. Normally, in order to increase the number of input / output terminals, this BGA has a semiconductor element mounted on one side of a double-sided wiring board and an external terminal electrode provided with a spherical solder on the other side, and is connected to the semiconductor element through a through hole. The connection with the external terminal electrode was established. By arranging spherical solders in an array, the pitch of the terminals can be wider than that of a semiconductor device using a conventional lead frame. As a result, the mounting process of the semiconductor device is not difficult, and the number of input / output terminals is increased. Was able to respond. However, in this BGA, a circuit for connecting a semiconductor element to be mounted and a wire, and electrodes for external terminals for mounting on a printed circuit board after the semiconductor device is formed are provided on both sides of the base material, and these are provided through through holes. It is a complicated configuration in which the through holes are electrically connected to each other, and the through holes may be broken due to the effect of thermal expansion of the resin.

For this reason, a method of manufacturing a semiconductor device as shown in FIGS. 2 and 3 which simplifies the manufacturing process of the above-mentioned BGA, avoids a decrease in reliability, and responds to increase in the number of pins and downsizing of the package. Has been proposed. A semiconductor device according to this method is similar to a conventional BGA using a double-sided wiring board, in which a part of an external terminal for connecting to an external circuit is exposed on one surface of the semiconductor device from a sealing resin and arranged. Is a new type of plastic BGA, CSP (Chip
(size package).
The method for manufacturing a semiconductor device shown in FIG.
A circuit member 200 on which a circuit portion 210 made of a conductive metal is formed by a plating method is prepared (FIG. 1A), a semiconductor element 250 is mounted on the circuit portion 210, and necessary electrical connections are made. After performing (FIG. 2 (b)), the semiconductor device 280A sealed with resin is obtained on the conductive substrate 220 (FIG. 2 (c)), and the resin-sealed semiconductor device 280A is peeled off from the conductive substrate 220 (FIG. 2 (b)). 2 (d), FIG. 2 (e)), or obtained by attaching a solder ball 290 to the further exposed surface of the circuit section 210 (FIG. 2).
(F))). In the case of this method, the circuit portion 21 made of a conductive metal formed on the conductive substrate 220 is used.
0 is set in advance on the conductive substrate 22 so that
For example, a treatment such as performing a surface treatment for providing irregularities on one surface and performing a peeling treatment for imparting peelability is performed.
The surface treatment here includes blasting by sandblasting, and the peeling treatment includes treatment for forming an oxide film on the surface of the conductive substrate.

In the method of manufacturing a semiconductor device shown in FIG. 3, a conductive substrate 320 having a metal layer 323 provided on one surface thereof by plating or the like is used.
A circuit member 300 having a circuit portion 310 formed thereon by plating is prepared on the substrate 23 (FIG. 3A), a semiconductor element 350 is mounted on the circuit portion 310, and necessary electrical connections are made (FIG. 3A). 3 (b)), resin sealing is performed on the conductive substrate 320, and the resin-sealed semiconductor device 380A is dissolved by dissolving the metal layer 323 (FIG. 3 (d)). 3 (d), and further obtained by attaching a solder ball 390 to the exposed surface of the circuit portion 310 (FIG. 3 (e)).

[0007]

However, FIG. 2 and FIG.
The manufacturing method of the semiconductor device shown in (1) has a problem that when the resin-sealed semiconductor device is peeled from the conductive substrate, the individual packages are independent and the subsequent handling is difficult, which has been a problem. . The present invention corresponds to this, and manufactures a resin-sealed semiconductor device such as a plastic BGA using a circuit member having a circuit portion formed by an electroforming method (plating method) as shown in FIGS. In the same manner as in the case of manufacturing a resin-encapsulated semiconductor device using a normal imposed lead frame (also referred to as a series), the process progresses in a state where a plurality of impositions are performed (a series). It is an object of the present invention to provide a method of manufacturing a semiconductor device which can be performed.

[0008]

According to a method of manufacturing a resin-encapsulated semiconductor device of the present invention, at least two-dimensionally a conductive substrate and a conductive metal formed by plating on the conductive substrate are formed. A circuit member for a semiconductor device having a circuit portion and the like, and at least a part of the circuit portion is formed on one surface of a conductive substrate by plating directly or through an insulating layer, After mounting the semiconductor element on the circuit member, making the necessary electrical connections, and sealing with resin,
A method of manufacturing a semiconductor device by separating from the conductive substrate, a method of manufacturing a resin-encapsulated semiconductor device, a unit circuit portion for one semiconductor device, in a state of being imposed,
A plurality of semiconductor devices are manufactured on a conductive substrate, and a semiconductor element is mounted on each circuit portion of the conductive substrate, and necessary electric connections are made. A connecting portion made of a sealing resin that is integrally connected at least partially with the sealing resin portion of the device is provided to connect adjacent semiconductor devices, and to seal all of a plurality of semiconductor devices to be processed. A resin sealing step of resin sealing in a state of being connected with a resin, a peeling step of peeling from a conductive substrate in a state where all of a plurality of semiconductor devices to be processed are connected by a sealing resin, and a peeling; And a trimming step of removing a connecting portion made of a sealing resin for separating the semiconductor devices from each other.

[0009]

The method of manufacturing a resin-encapsulated semiconductor device according to the present invention comprises:
With the above-described configuration, the electroforming method (plating) shown in FIGS. 2 and 3 corresponding to the simplification of the manufacturing process of the BGA, the reduction in the reliability, the increase in the number of pins, and the miniaturization of the package are avoided. In the production of a plastic BGA in which a circuit portion is formed by a method, a plurality of impositions are performed in the same manner as in the case of manufacturing a resin-encapsulated semiconductor device using a normal impositioned lead frame (also referred to as a series). This allows the process to proceed in a completed state (a series of states). As a result, the work can be performed stably, leading to a reduction in cost. Specifically, if necessary, a step of applying an insulating layer to the back surface of the package or a solder plating step is performed in a state where all of a plurality of semiconductor devices to be processed are connected by a sealing resin, and This can be performed in a state of being separated from the substrate. Specifically, a circuit member for a semiconductor device having a conductive substrate and a circuit portion or the like formed at least two-dimensionally by a conductive metal formed by plating on the conductive substrate, and at least one of the circuit portions Department
On one surface of the conductive substrate, using a circuit member formed by plating directly or via an insulating layer, mounting a semiconductor element on the circuit member, making necessary electrical connections, and after resin sealing, A method for manufacturing a resin-encapsulated semiconductor device, in which a semiconductor device is manufactured by being separated from a conductive substrate, wherein a plurality of unit circuit portions for one semiconductor device are electrically After mounting on a conductive substrate, mounting a semiconductor element for each circuit portion of the conductive substrate, making necessary electrical connections, sequentially sealing the resin for each semiconductor device, and sealing the semiconductor device. A connecting portion made of a sealing resin integrally connected to at least a part of the sealing resin portion is provided to connect adjacent semiconductor devices, and all of a plurality of semiconductor devices to be processed are connected by the sealing resin. Resin sealing for resin sealing A peeling step of peeling the semiconductor device from the conductive substrate in a state where all of the plurality of semiconductor devices to be processed are connected with the sealing resin, and a sealing process for separating the semiconductor devices from each other after the peeling. This is achieved by having a trimming step of removing the connecting portion made of resin.

[0010]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for manufacturing a resin-sealed semiconductor device according to the present invention will be described with reference to the drawings. FIG. 1 shows an example of an embodiment of a method of manufacturing a resin-sealed semiconductor device according to the present invention. In FIG. 1, 110 is a circuit member, 113 is a unit circuit portion, 115 is a jig hole, 117 is a die pad, 11
8 is a terminal part, 120 is a sealing resin, 125 is a connecting part, 1
25A is a trimming unit, 130 is a semiconductor device group in a connected state, and 140 is a semiconductor device (one). First, in a state where a plurality of unit circuit portions 113, which are circuits for one semiconductor device, are mounted, a circuit member 110 formed on one surface of the conductive substrate 110A that has been subjected to a surface treatment is prepared. (Figure 1
(A)) The surface treatment is a blast treatment, and the conductive substrate 110
The surface on the side where the circuit A is formed is roughened. The circuit portion is formed by patterning a plating resist on the surface-treated surface side of the conductive substrate and plating the exposed surface. Unit circuit section 11 corresponding to one semiconductor element
3 has a shape as shown in FIG. 1 (a1), for example. Although the plating configuration of the circuit portion is not particularly limited, for example, from the conductive substrate side, Pd, Ni, and Pd are each 0.1 μm and 5 μm in order from the conductive substrate side.
One having a thickness of 0.1 μm or 0.1 μm is exemplified. The circuit member shown in FIG. 1 is obtained by directly plating the entire circuit portion on one surface of a conductive substrate, but is not particularly limited thereto.

Then, after mounting the semiconductor element on the die pad 117 of each unit circuit section 113, and performing wire bonding connection between the terminal section of the semiconductor element and the terminal section 118 of the unit circuit section 113, Connecting portion 1 made of a sealing resin integrally connected at least partially with the sealing resin portion of the semiconductor device together with the resin sealing.
The semiconductor device 140 is connected to the semiconductor device 140, and the plurality of semiconductor devices to be processed are all sealed with a sealing resin. (FIG. 1B) Next, in a state (130) in which all of the plurality of semiconductor devices 140 to be processed are connected by the sealing resin 120, the semiconductor device 140 is separated from the conductive substrate 110A. (FIG. 1C) After the peeling, a trimming step of removing the connecting portion 125 made of the sealing resin is performed to separate the semiconductor devices 140 from each other. (Figure 1
(D))

In the example shown in FIG. 1, as in the case of manufacturing the semiconductor device shown in FIG. 2, after the resin is sealed from the surface of the conductive substrate, the semiconductor device is pulled off, and the semiconductor device shown in FIG. As in the case of manufacturing a device, a metal layer may be provided on one surface of a conductive substrate in advance, and after sealing with a resin, the metal layer provided on one surface of the conductive substrate may be dissolved to be separated. In this case, for example, iron-
Nickel-based, iron-nickel-chromium-based, iron-nickel-
Using a carbon-based material, a copper layer is previously provided on one surface as a metal layer to be dissolved later for peeling, and Au, Ni, and Pd layers are sequentially formed on the copper layer as circuit portions in the order of 0.1. Plating is formed to a thickness of 1 μm, 5 μm, and 0.1 μm.

[0013]

According to the present invention, as described above, under the circumstances where higher integration and higher functionality of a resin-encapsulated semiconductor device are required, the conventional multi-pin type semiconductor device can be used without a defect in a conventional BGA. In the production of a plastic BGA having a circuit portion formed by an electroforming method (plating method) as shown in FIGS. As in the case of manufacturing a resin-encapsulated semiconductor device using the above-described method, it is possible to provide a manufacturing method in which the process can be performed in a state in which a plurality of semiconductor devices are imposed (a series).

[Brief description of the drawings]

FIG. 1 shows a method 1 for manufacturing a resin-sealed semiconductor device of the present invention.
Figure showing an example

FIG. 2 is a process chart of a method for manufacturing a semiconductor device using a circuit member manufactured by an electroforming method (plating method).

FIG. 3 is a process diagram of a method for manufacturing a semiconductor device using a circuit member manufactured by an electroforming method (plating method).

FIG. 4 is a diagram for explaining a lead frame and a QFP.

[Explanation of symbols]

 110 circuit member 113 unit circuit part 115 jig hole 117 die pad 118 terminal part 120 sealing resin 125 connecting part 125A trimming part 130 connected semiconductor device group 140 semiconductor device (one piece) 200 circuit member 210 circuit part 220 conductivity Substrate 225 Jig hole 230 Silver plated part 250 Semiconductor element 251 Terminal part 255 Wire 270 Sealing resin 280, 280A Semiconductor device 290 Solder ball 300 Circuit member 310 Circuit part 320 Conductive substrate 321 Conductive substrate material 323 Metal layer 325 Hole 330 Silver plating section 350 Semiconductor element 351 Terminal section 355 Wire 370 Sealing resin 380, 380A Semiconductor device 390 Solder ball 410 Single layer lead frame 411 Die pad 412 Inner lead 413 Outer 414 dam bar 415 hanging lead 416 frame part (frame) 420 semiconductor devices 421 terminal (electrode pad) 430 wire 440 resin

Claims (1)

[Claims] 1. A circuit member for a semiconductor device having a conductive substrate and a circuit portion formed at least two-dimensionally by a conductive metal formed on a conductive substrate by plating, and at least a circuit portion. A part of the circuit member is formed on one surface of the conductive substrate by plating directly or via an insulating layer, a semiconductor element is mounted on the circuit member, necessary electric connection is performed, and resin sealing is performed. A method of manufacturing a semiconductor device by separating the conductive substrate from the conductive substrate, wherein the unit circuit portion for one semiconductor device is placed in an imposed state. , A plurality, prepared on a conductive substrate, mounted with a semiconductor element for each circuit portion of the conductive substrate, after making the necessary electrical connection, sequentially, with resin sealing for each semiconductor device, The sealing resin part of the semiconductor device At least a part of a sealing resin that is integrally connected is provided to connect adjacent semiconductor devices, and a plurality of semiconductor devices to be processed are all connected by the sealing resin. A resin encapsulating step, a peeling step of peeling the semiconductor device from the conductive substrate in a state where all of the plurality of semiconductor devices to be processed are connected with the sealing resin, and after peeling, the semiconductor devices are separated from each other. A trimming step of removing a connecting portion made of a sealing resin for separating the semiconductor device.