JPH11302809A - Manufacture of copper thin film substrate and printed circuit board - Google Patents
Manufacture of copper thin film substrate and printed circuit boardInfo
- Publication number
- JPH11302809A JPH11302809A JP10674398A JP10674398A JPH11302809A JP H11302809 A JPH11302809 A JP H11302809A JP 10674398 A JP10674398 A JP 10674398A JP 10674398 A JP10674398 A JP 10674398A JP H11302809 A JPH11302809 A JP H11302809A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- layer
- copper thin
- copper
- film substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 88
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 85
- 239000010949 copper Substances 0.000 title claims abstract description 85
- 239000010409 thin film Substances 0.000 title claims abstract description 56
- 239000000758 substrate Substances 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 25
- 238000004544 sputter deposition Methods 0.000 claims abstract description 16
- 229920006259 thermoplastic polyimide Polymers 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 9
- 239000009719 polyimide resin Substances 0.000 claims abstract description 8
- 238000009713 electroplating Methods 0.000 claims description 12
- 239000010408 film Substances 0.000 claims description 10
- 230000004927 fusion Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 abstract description 59
- 239000000853 adhesive Substances 0.000 abstract description 8
- 230000001070 adhesive effect Effects 0.000 abstract description 8
- 239000012790 adhesive layer Substances 0.000 abstract description 7
- 238000007747 plating Methods 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 1
- 229920001721 polyimide Polymers 0.000 description 22
- 239000004642 Polyimide Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000011889 copper foil Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000792 Monel Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- ZGDWHDKHJKZZIQ-UHFFFAOYSA-N cobalt nickel Chemical compound [Co].[Ni].[Ni].[Ni] ZGDWHDKHJKZZIQ-UHFFFAOYSA-N 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 125000005462 imide group Chemical group 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
- C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【001】[0101]
【発明の属する技術分野】本発明は、微細回路(通常、
導体幅50μm以下、導体間50μm以下を言う)を有
するプリント配線板あるいは半導体分野で使用する電子
部品のデバイス、センサー等を製造するのに用いられる
銅薄膜基板に関するものである。TECHNICAL FIELD The present invention relates to a fine circuit (usually,
The present invention relates to a printed wiring board having a conductor width of 50 μm or less and a conductor width of 50 μm or less) or a copper thin film substrate used for manufacturing electronic component devices and sensors used in the semiconductor field.
【002】[0092]
【従来の技術】従来のフレキシブル回路基板はエポキシ
樹脂等の接着剤を用いて、ポリイミドフィルムと金属箔
と貼り合わせることにより製造されているために耐熱性
・耐薬品性・電気特性等の特性は、使用されている接着
剤の特性に支配され、ポリイミドの優れた諸特性が十分
に活かされず、特に耐熱性の点でも十分なものでなかっ
た。また、銅箔については、18、35、μmが使用さ
れており。近年の高密度化及び高性能化に伴う微細な回
路形成に十分対応できるものではない。そこで、銅箔の
薄膜化は、真空蒸着法、スパッタリング法、イオンプレ
ーティング法、無電解メッキ法等により、耐熱性絶縁基
材に銅の薄膜層を形成する事によって製造が試みられて
いるが、種々の問題があり、微細な回路を有するプリン
ト配線板の製造に適するものはない。有機物の接着剤層
を有せず且つ可能な限り薄い銅層を有する銅薄膜基板が
要求されている。2. Description of the Related Art A conventional flexible circuit board is manufactured by bonding a polyimide film and a metal foil using an adhesive such as an epoxy resin. However, the properties of the adhesive used are dominant, and the excellent properties of polyimide are not sufficiently utilized, and the heat resistance is not sufficient. For the copper foil, 18, 35 and μm are used. It is not enough to cope with the fine circuit formation accompanying the recent high density and high performance. Therefore, copper foil thinning has been attempted by forming a copper thin film layer on a heat-resistant insulating base material by a vacuum evaporation method, a sputtering method, an ion plating method, an electroless plating method, or the like. There are various problems, and none is suitable for manufacturing a printed wiring board having a fine circuit. There is a demand for a copper thin-film substrate having no organic adhesive layer and having a copper layer as thin as possible.
【003】[0093]
【発明が解決しようとする課題】本発明は、上述の問題
を解決しようとするものであり、具体的には、本発明の
目的は、特別な接着剤を用意する必要がなく、簡単確実
に所望の位置に所望の回路要素を強力に接着したり、ま
たそれ自身を所望の部材に接着したり、さらに微細回路
を容易に形成し得るプリント配線板およびプリント配線
板の製造に利用し得る銅薄膜基板を提供することにあ
る。SUMMARY OF THE INVENTION The present invention aims to solve the above-mentioned problems. Specifically, an object of the present invention is to provide a simple and reliable method without the need for preparing a special adhesive. A printed circuit board capable of strongly adhering a desired circuit element to a desired position, adhering itself to a desired member, and easily forming a fine circuit, and copper that can be used for manufacturing a printed circuit board It is to provide a thin film substrate.
【004】[0093]
【課題を解決するための手段】叙述上の本発明の目的
は、耐熱性絶縁基材からなる主体層の一方の主面に、熱
可塑性ポリイミド樹脂からなる溶融接着層と、もう一方
の主面上に第一層としてスパッタリング法で形成した銅
薄膜層と、該銅薄膜層上に第二層として電気メッキ法で
形成した銅厚層とから成る銅薄膜基板によって達成され
る。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for forming a heat-resistant insulating base material on one main surface of a main adhesive layer comprising a thermoplastic polyimide resin and a second main surface. This is achieved by a copper thin film substrate comprising a copper thin film layer formed by a sputtering method as a first layer and a copper thick layer formed by an electroplating method as a second layer on the copper thin film layer.
【005】即ち、本発明は、(1)耐熱性絶縁基材から
なる主体層の両面あるいは片面に形成された、熱可塑性
ポリイミド樹脂からなる溶融接着層と、一方の主面上に
第一層としてスパッタリング法で形成された銅薄膜層
と、該銅薄膜層上に第二層として電気メッキ法で形成さ
れた銅厚層とからなることを特徴とする銅薄膜基板、
(2)スパッタリング法で形成する第一層の銅薄膜層の
銅厚が大きくても1μmであることを特徴とする(1)
に記載の銅薄膜基板、(3)第二層の電気メッキ法で形
成する銅厚層の銅厚が1μm以上、18μm以下である
ことを特徴とする(1)又は(2)のいずれかに記載の
銅薄膜基板、(4)耐熱性絶縁基材が非熱可塑性ポリイ
ミドフィルムであることを特徴とする(1)〜(3)の
いずれかに記載の銅薄膜基板、および(5)(1)〜
(4)のいずれかに記載の銅薄膜基板を使用して回路を
形成し製造される、微細な回路を有することを特徴とす
るプリント配線板である。That is, the present invention provides (1) a fusion bonding layer made of a thermoplastic polyimide resin formed on both sides or one side of a main layer made of a heat-resistant insulating base material, and a first layer formed on one main surface. As a copper thin film layer formed by a sputtering method, and a copper thin film substrate comprising a copper thick layer formed by an electroplating method as a second layer on the copper thin film layer,
(2) The first copper thin film layer formed by the sputtering method has a copper thickness of at most 1 μm (1).
(3) The copper thin film substrate according to (1) or (2), wherein the copper thickness of the copper thick layer formed by the second layer electroplating method is 1 μm or more and 18 μm or less. (4) The copper thin film substrate according to any one of (1) to (3), wherein the heat-resistant insulating substrate is a non-thermoplastic polyimide film, and (5) (1) ) ~
A printed wiring board having a fine circuit, wherein the circuit is formed by using the copper thin film substrate according to any one of the above (4).
【006】[0086]
【発明の実施の形態】スパッタリング法による銅薄膜層
の形成方法は、種々有るが、特に限定される条件はな
い。形成すべき薄膜に対応させて適宜ターゲットを選択
して用いることは当業者の理解するところである。スパ
ッタリングの方式にも限定される条件はなく、DCマグ
ネトロンスパッタリング、高周波マグネトロンスパッタ
リング、イオンビームスパッタリング等の方式が有利に
用いられる。DESCRIPTION OF THE PREFERRED EMBODIMENTS There are various methods for forming a copper thin film layer by a sputtering method, but there is no particular limitation. It is understood by those skilled in the art that a target is appropriately selected and used in accordance with a thin film to be formed. The sputtering method is not limited, and a method such as DC magnetron sputtering, high-frequency magnetron sputtering, or ion beam sputtering is advantageously used.
【007】本発明においては、耐熱性絶縁基材と第一層
の銅薄膜層との間に、スッパッタリング法で下地金属層
を形成させることが密着性の点から好ましい。下地金属
層は、コバルトニッケル、クロム、ニクロム、チタン、
モリブデン、タングステン、亜鉛、錫、インジウム、イ
ンジウム錫、シリコン、モネルメタル等ならびにこれら
の酸化物、炭化物、窒化物等が有用である。下地金属層
の厚みは0.03〜0.1μmで充分である。0.03
μm未満では密着性の効果が充分でなく、0.1μmを
越えると導電性の低下、エッチングによる回路加工性の
低下、コストの増加等の問題が顕在化してくる。In the present invention, it is preferable from the viewpoint of adhesion that a base metal layer is formed between the heat-resistant insulating base material and the first copper thin film layer by a sputtering method. The base metal layer is made of cobalt nickel, chromium, nichrome, titanium,
Molybdenum, tungsten, zinc, tin, indium, indium tin, silicon, monel metal, etc., and oxides, carbides, nitrides, etc. thereof are useful. It is sufficient that the thickness of the underlayer metal layer is 0.03 to 0.1 μm. 0.03
If it is less than μm, the effect of adhesion is not sufficient. If it exceeds 0.1 μm, problems such as a decrease in conductivity, a decrease in circuit workability due to etching, and an increase in cost become apparent.
【008】本発明の銅薄膜基板の第二層の銅厚層の連続
形成方法は、電気メッキ法によるもので、銅厚は、1μ
m以上、18μm以下である。銅厚の設定は、目的とす
る微細な回路形成の種類により選択するが、通常、10
μm以下の銅厚が一般的な傾向である。本方法によれば
経済的にも実用性があるピンホール皆無の銅薄膜基板が
得られる。本発明の銅薄膜基板の第二層の任意の銅厚層
を連続形成する電気メッキ法は公知の方法によるもので
ある。The method for continuously forming the second thick copper layer of the copper thin film substrate according to the present invention is based on an electroplating method.
m or more and 18 μm or less. The setting of the copper thickness is selected depending on the type of the target fine circuit formation.
Copper thickness below μm is a general trend. According to this method, a copper thin film substrate having no pinholes, which is economically practical, can be obtained. The electroplating method for continuously forming an arbitrary thick copper layer as the second layer of the copper thin film substrate of the present invention is based on a known method.
【009】本発明の銅薄膜基板に使用する耐熱性絶縁基
材は、各種ポリイミドフィルムであるが、例えば、カプ
トンフィルム(東レ・デュポン(株)製)、アピカルフ
ィルム(鐘淵化学工業(株)製)、ユーピレックスフィ
ルム(宇部興産(株)製)等で、厚みは、25、50μ
mが実用的である。The heat-resistant insulating base material used for the copper thin film substrate of the present invention is various polyimide films. For example, Kapton film (manufactured by Du Pont-Toray Co., Ltd.) and Apical Film (manufactured by Kanegafuchi Chemical Industry Co., Ltd.) Manufactured by Ube Industries, Ltd.), and the thickness is 25, 50 μm.
m is practical.
【0010】本発明の銅薄膜基板に使用する熱可塑性ポ
リイミドは、主鎖にイミド構造を有するポリマーであっ
てガラス転移温度が、好ましくは150℃〜350℃の
範囲内にあり、このガラス転移温度以上の温度領域で
は、弾性率が急激に低下するものを言う。[0010] The thermoplastic polyimide used for the copper thin film substrate of the present invention is a polymer having an imide structure in the main chain and has a glass transition temperature preferably in the range of 150 ° C to 350 ° C. In the above-mentioned temperature range, the elastic modulus sharply decreases.
【0011】以下に、本発明の銅薄膜基板の製造につい
て記載する。使用目的に適した長尺ポリイミドフィルム
に熱可塑性ポリイミドを積層する。この熱可塑性ポリイ
ミドは、該ポリイミドあるいは該ポリイミドの前駆体を
溶媒に溶解した状態でポリイミドフィルム上に塗布し、
これをタックフリーの状態まで加熱することが好まし
い。塗布する方法には特に限定はなく、コンマコータ
ー、ナイフコーター、ロールコーター、リバースコータ
ー、ダイコーター、グラビアコーター、ワイヤーバー等
の公知の塗布装置を使用することができる。また加熱方
法には熱風、熱窒素、遠赤外線、高周波等公知の方法を
使用することができる。Hereinafter, the production of the copper thin film substrate of the present invention will be described. A thermoplastic polyimide is laminated on a long polyimide film suitable for the purpose of use. This thermoplastic polyimide is applied on a polyimide film in a state where the polyimide or the precursor of the polyimide is dissolved in a solvent,
This is preferably heated to a tack-free state. There is no particular limitation on the method of coating, and a known coating device such as a comma coater, a knife coater, a roll coater, a reverse coater, a die coater, a gravure coater, or a wire bar can be used. As a heating method, a known method such as hot air, hot nitrogen, far infrared rays, and high frequency can be used.
【0012】所望のポリイミド層が形成された後、層中
の揮発成分を除去し、かつポリイミドの前駆体を塗布し
た場合には縮合反応を完了するために、十分に加熱する
ことが必要である。この場合の加熱方法も、上記に準じ
た各種の公知の方法を使用することができる。加熱温度
は積層されるポリイミドのガラス転移温度以上の温度が
好ましい。After the desired polyimide layer is formed, it is necessary to sufficiently heat it to remove volatile components in the layer and complete the condensation reaction when a polyimide precursor is applied. . In this case, as the heating method, various known methods according to the above can be used. The heating temperature is preferably a temperature equal to or higher than the glass transition temperature of the polyimide to be laminated.
【0013】溶融接着材層を形成後、もう一方の面を銅
ターゲット側に位置するようにスッパッタリング装置の
繰り出し部に設置する。規定のスパッタリング銅厚が形
成されるように予め定められた最適な条件下で銅薄膜層
を長尺連続形成し、樹脂製等の管に巻き取り、第一層の
スパッタリングによる銅薄膜層の形成を完了する。次に
第一層のスッパッタリングによる銅薄膜層が形成された
長尺ポリイミドフィルムを、第二層の電気メッキによる
銅厚層を形成するべく電気メッキ装置の繰り出し部に設
置する。規定の銅厚が形成されるように予め定められた
最適な条件下で銅厚層を長尺連続形成し、樹脂製等の管
に巻き取り、第二層の電気メッキによる銅厚層の形成を
完了する。本製造は、第一層のスパッタリングによる銅
薄膜層が形成された長尺ポリイミドフィルムをいったん
巻きとることなく、電気メッキ工程へ供給し、第二層の
銅厚層の形成を連続工程で行うことも可能である。上記
本発明の銅薄膜基板の製造は可能な限りクリーンな環境
下で進める事と電気メッキ液の管理を厳重に行う事が好
ましい。After the formation of the molten adhesive layer, the other surface is placed on the pay-out portion of the sputtering apparatus so that the other surface is located on the copper target side. A copper thin film layer is continuously formed under a predetermined optimum condition so that a prescribed sputtering copper thickness is formed, and is wound around a tube made of resin or the like, and the copper thin film layer is formed by sputtering the first layer. Complete. Next, the long polyimide film on which the copper thin film layer is formed by the sputtering of the first layer is placed in the feeding portion of the electroplating apparatus in order to form the copper thick layer by the electroplating of the second layer. Form a long continuous copper thick layer under the optimal conditions predetermined so that the specified copper thickness is formed, wind it up on a tube made of resin, etc., and form the copper thick layer by electroplating the second layer Complete. In this production, the long polyimide film on which the copper thin film layer formed by the sputtering of the first layer is formed is supplied to the electroplating process without being once wound, and the formation of the copper thick layer of the second layer is performed in a continuous process. Is also possible. It is preferable that the production of the copper thin film substrate of the present invention be carried out in an environment as clean as possible and that the control of the electroplating solution be strictly performed.
【0014】本発明の銅薄膜基板のポリイミドフィルム
と銅薄膜層との接着強度及びピンホールの測定を以下に
記載する。接着強度の測定は、長尺の銅薄膜基板の両端
からサンプリングしたものにつき、IPC−TM−65
0−2.4.9に準じて行う。一方、ピンホールの測定
は、接着強度と同様にサンプリングしたものにつきライ
トテーブル上で下方からの光の通過を確認する。The measurement of the adhesive strength and the pinhole between the polyimide film and the copper thin film layer of the copper thin film substrate of the present invention will be described below. The adhesion strength was measured using IPC-TM-65 on a sample taken from both ends of a long copper thin film substrate.
Perform according to 0-2.4.9. On the other hand, in the measurement of the pinhole, the passage of light from below is confirmed on a light table for a sample sampled in the same manner as the adhesive strength.
【0015】次に、本発明の銅薄膜基板を用いて、サブ
トラクティブ法により微細な回路を有するプリント配線
板の製造を以下に記載する。先ず、必要に応じて銅面を
前処理した銅薄膜基板の銅面に液状フォトエッチングレ
ジストインクを全面塗布するか、あるいはドライフィル
ムを全面に貼り付け、所望の回路パターンを有するフォ
トマスクを紫外線等の活性光線を通す事によってレジス
ト材を露光し、現像して所望の回路パターンを形成す
る。しかる後に、塩化第二鉄、塩化第二銅、過硫酸塩
類、アルカリエッチャント等のエッチング液により、回
路パターン以外の銅面を溶解除去し、所望の微細回路を
有するプリント配線板を得るのである。Next, the manufacture of a printed wiring board having a fine circuit by the subtractive method using the copper thin film substrate of the present invention will be described below. First, if necessary, apply a liquid photo-etching resist ink on the entire surface of the copper surface of the copper thin film substrate whose copper surface has been pre-treated, or attach a dry film on the entire surface, and apply a photomask having a desired circuit pattern to an ultraviolet ray or the like. The resist material is exposed to light by passing through the active light, and is developed to form a desired circuit pattern. Thereafter, the copper surface other than the circuit pattern is dissolved and removed with an etching solution such as ferric chloride, cupric chloride, persulfates, and alkaline etchants, thereby obtaining a printed wiring board having a desired fine circuit.
【0016】[0016]
【実施例】以下に本発明の実施例を具体的に説明する。 実施例1 市販の長尺のポリミドフィルム(鐘淵化学工業(株)製
アピカルNPI、厚み25μm)に熱可塑性ポリイミ
ドの前駆体であるポリアミド酸溶液(三井化学(株)
製、PI−A)を、塗工機によってポリイミドフィルム
の片面に塗布・乾燥して溶融接着層(厚み10μm)を
得た。さらにもう一方の表面に連続スパッタリングにて
0.25μmの銅薄膜層を形成し、所望の銅薄膜基板を
得た。この銅薄膜基板の接着強度は14.7N/cmで
あり、且つ、ピンホールは皆無であった。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be specifically described below. Example 1 A polyamic acid solution (Mitsui Chemicals, Inc.), a precursor of a thermoplastic polyimide, was applied to a commercially available long polyimide film (Apical NPI, manufactured by Kaneka Chemical Co., Ltd., thickness: 25 μm).
Co., Ltd., PI-A) was applied to one side of a polyimide film by a coating machine and dried to obtain a molten adhesive layer (thickness: 10 μm). Further, a copper thin film layer of 0.25 μm was formed on the other surface by continuous sputtering to obtain a desired copper thin film substrate. The adhesive strength of this copper thin film substrate was 14.7 N / cm, and there was no pinhole.
【0017】次に上記フィルムをガラスポリイミド樹脂
基板からなる両面プリント配線板(松下電工( 株) 製
R4775 厚み0. 5mm) の両面に加熱圧着(240
℃、30分、3.9MPa)し、片面銅張積層板化し
た。さらに表面にドライフィルムタイプの感光性レジス
ト(旭化成 AQ2536) を塗布した。レジストに露光(6
0mj)・現像工程を行い、バイアホール形成用の穴パタ
ーンを形成し、ウエットエッチング(塩化第二鉄)によ
り銅箔に穴パターンを形成した。レジストを剥離後この
銅箔をマスクとしCO2 レーザ(三菱電機 ML505
GT)でバイアホールの加工を行った。バイアホール底
部の銅を起点に無電解銅メッキ(8μm)を行い、バイ
アホール部を銅で充填した。導体層は銅薄膜層およびメ
ッキ銅厚層であった。信号線はこの導体層上に液状フォ
トエッチングレジストインクをロールコーターで全面塗
布し、乾燥して液状フォトエッチングレジストインクの
皮膜を形成した。次に所望の微細回路を有するフォトマ
スクを介して回路パターン部分を露光し、回路皮膜を形
成し、現像して所望の回路パターンを得た。しかる後、
塩化第二鉄でエッチングし、回路パターン以外の銅面を
溶解除去し、回路パターン上の液状フォトエッチングレ
ジストインク被膜を除去して所望の微細回路を有するプ
リント配線板を得た。Next, the above-mentioned film was used as a double-sided printed wiring board made of a glass polyimide resin substrate (manufactured by Matsushita Electric Works, Ltd.).
R4775 0.5mm thick)
C., 3.9 MPa) for 30 minutes to form a single-sided copper-clad laminate. Further, a dry film type photosensitive resist (Asahi Kasei AQ2536) was applied to the surface. Exposure to resist (6
0mj) A development step was performed to form a hole pattern for forming a via hole, and a hole pattern was formed in the copper foil by wet etching (ferric chloride). After removing the resist, a CO 2 laser (Mitsubishi Electric ML505) is used with this copper foil as a mask.
GT) to process via holes. Electroless copper plating (8 μm) was performed starting from the copper at the bottom of the via hole, and the via hole was filled with copper. The conductor layers were a copper thin film layer and a plated copper thick layer. For the signal lines, a liquid photo-etching resist ink was applied on the entire surface of the conductor layer by a roll coater and dried to form a film of the liquid photo-etching resist ink. Next, the circuit pattern portion was exposed through a photomask having a desired fine circuit, a circuit film was formed, and developed to obtain a desired circuit pattern. After a while
The printed wiring board having a desired fine circuit was obtained by etching with ferric chloride, dissolving and removing the copper surface other than the circuit pattern, and removing the liquid photo-etching resist ink film on the circuit pattern.
【0018】得られたプリント配線板のガラスポリイミ
ド樹脂基板とポリイミドフィルムの密着強度の測定をI
PC−TM−650−2.4.9に準じて行った結果、
9.8N/cmの値が得られた。また、得られたプリン
ト配線板の断面を光学顕微鏡および走査型電子顕微鏡で
観測した結果、接着剤層が無い部分や剥離を起こしてい
る部分は観測されなかった。得られたプリント配線板の
導体幅(L)及び導体間(S)は、L/S=15/15
μmの微細回路であった。The adhesion strength between the glass polyimide resin substrate and the polyimide film of the obtained printed wiring board was measured by I
As a result of performing according to PC-TM-650-2.4.9,
A value of 9.8 N / cm was obtained. Further, as a result of observing the cross section of the obtained printed wiring board with an optical microscope and a scanning electron microscope, a portion having no adhesive layer and a portion having been peeled were not observed. The conductor width (L) and the distance between conductors (S) of the obtained printed wiring board are L / S = 15/15
It was a fine circuit of μm.
【0019】実施例2 実施例1においてガラスポリイミド樹脂基板を用いる代
わりに市販のフレキシブルプリント配線板を用いた以外
は実施例1と同様の手順でプリント配線板を製造した。Example 2 A printed wiring board was manufactured in the same manner as in Example 1 except that a commercially available flexible printed wiring board was used instead of using the glass polyimide resin substrate.
【0020】比較例1 実施例1においてポリイミドフィルムの片面に形成する
溶融接着層の厚みが5μmである以外は、実施例1と同
様の手順でプリント配線板を製造した。得られたプリン
ト配線板のガラスポリイミド樹脂基板とポリイミドフィ
ルムの密着強度の測定をIPC−TM−650−2.
4.9に準じて行った結果、1.96N/cmの値し得
られず、プリント配線板に要求される値を満たしていな
い。また、得られたプリント配線板の断面を金属顕微
鏡、走査型電子顕微鏡で観測した結果、接着剤層が無い
部分が観測され、剥離部分も認められた。Comparative Example 1 A printed wiring board was manufactured in the same manner as in Example 1 except that the thickness of the fusion bonding layer formed on one side of the polyimide film was 5 μm. The adhesion strength between the glass polyimide resin substrate and the polyimide film of the obtained printed wiring board was measured by IPC-TM-650-2.
As a result of performing the measurement according to 4.9, a value of 1.96 N / cm was not obtained, and did not satisfy the value required for the printed wiring board. Further, as a result of observing the cross section of the obtained printed wiring board with a metallographic microscope and a scanning electron microscope, a portion having no adhesive layer was observed, and a peeled portion was also observed.
【0021】比較例2 実施例1において無電解の厚みが20μmである以外
は、実施例1と同様の手順でプリント配線板を製造し
た。得られた微細回路部(L/S=15/15μm)を
光学顕微鏡(40倍)で観察した結果、短絡部が多数観
測され、微細回路の形成は不可能であった。Comparative Example 2 A printed wiring board was manufactured in the same procedure as in Example 1 except that the electroless thickness was 20 μm. As a result of observing the obtained fine circuit portion (L / S = 15/15 μm) with an optical microscope (× 40), many short-circuit portions were observed, and it was impossible to form a fine circuit.
【0022】[0022]
【発明の効果】本発明の銅薄膜基板を使用して、プリン
ト配線板を製造するにあたり、特別な接着剤を使用する
必要がなく、さらに微細な回路形成が通常のサブストラ
クティブ法でも容易に且つ正確になった。In producing a printed wiring board using the copper thin film substrate of the present invention, there is no need to use a special adhesive, and finer circuit formation can be easily and easily performed by the ordinary subtractive method. Became accurate.
【図1】本発明の銅薄膜基板の層構成の一例である。FIG. 1 is an example of a layer configuration of a copper thin film substrate of the present invention.
【図2】本発明の銅薄膜基板の層構成の一例である。FIG. 2 is an example of a layer configuration of a copper thin film substrate of the present invention.
10、20、銅薄膜基板 11、21、耐熱性絶縁基材 12、22、スパッタ銅薄膜層 13 メッキ銅厚層 14、24、溶融接着層 10, 20, copper thin film substrate 11, 21, heat-resistant insulating base material 12, 22, sputtered copper thin film layer 13, plated copper thick layer 14, 24, fusion bonding layer
Claims (5)
いは片面に形成された、熱可塑性ポリイミド樹脂からな
る溶融接着層と、一方の主面上に第一層としてスパッタ
リング法で形成された銅薄膜層と、該銅薄膜層上に第二
層として電気メッキ法で形成された銅厚層とからなるこ
とを特徴とする銅薄膜基板。1. A fusion bonding layer made of a thermoplastic polyimide resin formed on both surfaces or one surface of a main layer made of a heat-resistant insulating base material, and a first layer formed on one main surface by a sputtering method. A copper thin film substrate comprising: a copper thin film layer; and a copper thick layer formed by electroplating as a second layer on the copper thin film layer.
膜層の銅厚が大きくても1μmであることを特徴とする
請求項1に記載の銅薄膜基板。2. The copper thin film substrate according to claim 1, wherein the copper thin film layer of the first layer formed by sputtering has a thickness of at most 1 μm.
銅厚が1μm以上、18μm以下であることを特徴とす
る請求項1又は2のいずれかに記載の銅薄膜基板。3. The copper thin film substrate according to claim 1, wherein the copper thickness of the copper thick layer formed by the electroplating method of the second layer is 1 μm or more and 18 μm or less.
ィルムであることを特徴とする請求項1〜3のいずれか
に記載の銅薄膜基板。4. The copper thin film substrate according to claim 1, wherein the heat-resistant insulating substrate is a non-thermoplastic polyimide film.
板を使用して回路を形成し製造される、微細な回路を有
することを特徴とするプリント配線板。5. A printed wiring board having a fine circuit, which is manufactured by forming a circuit using the copper thin film substrate according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10674398A JPH11302809A (en) | 1998-04-16 | 1998-04-16 | Manufacture of copper thin film substrate and printed circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10674398A JPH11302809A (en) | 1998-04-16 | 1998-04-16 | Manufacture of copper thin film substrate and printed circuit board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11302809A true JPH11302809A (en) | 1999-11-02 |
Family
ID=14441413
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10674398A Pending JPH11302809A (en) | 1998-04-16 | 1998-04-16 | Manufacture of copper thin film substrate and printed circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11302809A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002098194A1 (en) * | 2001-05-31 | 2002-12-05 | Mitsui Mining & Smelting Co.,Ltd. | Copper plated circuit layer-carrying copper clad laminated sheet and method of producing printed wiring board using the copper plated circuit layer-carrying copper clad laminated sheet |
| JP2003034883A (en) * | 2001-07-26 | 2003-02-07 | Matsushita Electric Works Ltd | Method for forming metal film |
| JP2007012961A (en) * | 2005-07-01 | 2007-01-18 | Ngk Spark Plug Co Ltd | Wiring board |
| JP2017067764A (en) * | 2015-09-29 | 2017-04-06 | ミネベアミツミ株式会社 | Strain gauge, load sensor, and manufacturing method for strain gauge |
| WO2017057459A1 (en) * | 2015-09-29 | 2017-04-06 | ミネベア株式会社 | Strain gauge, load sensor, and method for manufacturing strain gauge |
-
1998
- 1998-04-16 JP JP10674398A patent/JPH11302809A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002098194A1 (en) * | 2001-05-31 | 2002-12-05 | Mitsui Mining & Smelting Co.,Ltd. | Copper plated circuit layer-carrying copper clad laminated sheet and method of producing printed wiring board using the copper plated circuit layer-carrying copper clad laminated sheet |
| KR100866440B1 (en) | 2001-05-31 | 2008-10-31 | 미쓰이 긴조꾸 고교 가부시키가이샤 | Manufacturing Method of Printed Wiring Board Using Copper Clad Laminated Plate with Copper Plating Circuit Layer and Copper Clad Laminated Plate with Copper Plating Circuit Layer |
| JP2003034883A (en) * | 2001-07-26 | 2003-02-07 | Matsushita Electric Works Ltd | Method for forming metal film |
| JP2007012961A (en) * | 2005-07-01 | 2007-01-18 | Ngk Spark Plug Co Ltd | Wiring board |
| JP2017067764A (en) * | 2015-09-29 | 2017-04-06 | ミネベアミツミ株式会社 | Strain gauge, load sensor, and manufacturing method for strain gauge |
| WO2017057459A1 (en) * | 2015-09-29 | 2017-04-06 | ミネベア株式会社 | Strain gauge, load sensor, and method for manufacturing strain gauge |
| CN108139196A (en) * | 2015-09-29 | 2018-06-08 | 美蓓亚三美株式会社 | Strain gauge, load cell and method for manufacturing strain gauge |
| EP3358292A4 (en) * | 2015-09-29 | 2019-04-17 | Minebea Mitsumi Inc. | DEFORMATION GAUGE, LOAD SENSOR, AND METHOD FOR MANUFACTURING DEFORMATION GAUGE |
| JP2019164161A (en) * | 2015-09-29 | 2019-09-26 | ミネベアミツミ株式会社 | Strain gauge, load sensor and method for manufacturing load sensor |
| CN113108684A (en) * | 2015-09-29 | 2021-07-13 | 美蓓亚三美株式会社 | Strain gauge, load sensor, and method for manufacturing strain gauge |
| US11131590B2 (en) | 2015-09-29 | 2021-09-28 | Minebea Mitsumi Inc. | Strain gauge, load sensor, and method for manufacturing strain gauge |
| JP2022153664A (en) * | 2015-09-29 | 2022-10-12 | ミネベアミツミ株式会社 | Strain gauge, load sensor, strain gauge manufacturing method, and load sensor manufacturing method |
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