JPH11228939A - Abrasive composition and abrading method - Google Patents
Abrasive composition and abrading methodInfo
- Publication number
- JPH11228939A JPH11228939A JP8370298A JP8370298A JPH11228939A JP H11228939 A JPH11228939 A JP H11228939A JP 8370298 A JP8370298 A JP 8370298A JP 8370298 A JP8370298 A JP 8370298A JP H11228939 A JPH11228939 A JP H11228939A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- polycarboxylic acid
- polishing composition
- abrasive
- polyalkylene oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims description 33
- 238000000034 method Methods 0.000 title claims description 5
- 229920000642 polymer Polymers 0.000 claims abstract description 25
- 239000002253 acid Substances 0.000 claims abstract description 21
- 229920000233 poly(alkylene oxides) Chemical group 0.000 claims abstract description 13
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 12
- 229920001577 copolymer Polymers 0.000 claims abstract description 11
- -1 alkylene glycol Chemical compound 0.000 claims abstract description 6
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims abstract description 5
- 229920001515 polyalkylene glycol Polymers 0.000 claims abstract description 4
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims abstract description 3
- 125000005429 oxyalkyl group Chemical group 0.000 claims abstract description 3
- 238000005498 polishing Methods 0.000 claims description 87
- 239000000758 substrate Substances 0.000 claims description 28
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 abstract description 6
- 239000003082 abrasive agent Substances 0.000 abstract description 4
- 239000010432 diamond Substances 0.000 abstract description 4
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 abstract description 4
- 238000005299 abrasion Methods 0.000 abstract 1
- 125000003342 alkenyl group Chemical group 0.000 abstract 1
- 238000013329 compounding Methods 0.000 abstract 1
- 229910003460 diamond Inorganic materials 0.000 abstract 1
- 230000032050 esterification Effects 0.000 abstract 1
- 238000005886 esterification reaction Methods 0.000 abstract 1
- 229920002554 vinyl polymer Polymers 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 11
- 239000011521 glass Substances 0.000 description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 10
- 239000006185 dispersion Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229920003023 plastic Polymers 0.000 description 8
- 239000004033 plastic Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 229910052580 B4C Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 3
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 229910052878 cordierite Inorganic materials 0.000 description 2
- 150000001991 dicarboxylic acids Chemical class 0.000 description 2
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 2
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 229910021397 glassy carbon Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052863 mullite Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 229910002076 stabilized zirconia Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- XEEYSDHEOQHCDA-UHFFFAOYSA-N 2-methylprop-2-ene-1-sulfonic acid Chemical compound CC(=C)CS(O)(=O)=O XEEYSDHEOQHCDA-UHFFFAOYSA-N 0.000 description 1
- PYSRRFNXTXNWCD-UHFFFAOYSA-N 3-(2-phenylethenyl)furan-2,5-dione Chemical compound O=C1OC(=O)C(C=CC=2C=CC=CC=2)=C1 PYSRRFNXTXNWCD-UHFFFAOYSA-N 0.000 description 1
- 229920002126 Acrylic acid copolymer Polymers 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000005909 Kieselgur Substances 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical class CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 229920000147 Styrene maleic anhydride Polymers 0.000 description 1
- ATMLPEJAVWINOF-UHFFFAOYSA-N acrylic acid acrylic acid Chemical compound OC(=O)C=C.OC(=O)C=C ATMLPEJAVWINOF-UHFFFAOYSA-N 0.000 description 1
- 239000004480 active ingredient Substances 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 229910001593 boehmite Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000010459 dolomite Substances 0.000 description 1
- 229910000514 dolomite Inorganic materials 0.000 description 1
- 229910001651 emery Inorganic materials 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000003349 gelling agent Substances 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002763 monocarboxylic acids Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- UIIIBRHUICCMAI-UHFFFAOYSA-N prop-2-ene-1-sulfonic acid Chemical compound OS(=O)(=O)CC=C UIIIBRHUICCMAI-UHFFFAOYSA-N 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000008399 tap water Substances 0.000 description 1
- 235000020679 tap water Nutrition 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 239000002349 well water Substances 0.000 description 1
- 235000020681 well water Nutrition 0.000 description 1
- 238000010333 wet classification Methods 0.000 description 1
- 238000001238 wet grinding Methods 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は水系スラリーの研磨
用組成物に関する。更に詳しくは、アルミサブストレー
ト及びアルミサブストレート上にニッケルリンを無電解
メッキ等したニッケルサブストレート、アルミサブスト
レートを陽極酸化したアルマイトサブストレート等が使
用されるコンピューター等の記憶装置であるアルミニウ
ム磁気ディスク基板や、アクティブマトリックス型LC
D、液晶カラーフィルター、時計・電卓・カメラ用LC
Dあるは太陽電池等のディスプレイ用ガラス基板、LS
Iフォトマスク用ガラス基板、光ディスクや磁気ディス
ク用のガラス基板あるいは光学用レンズなどの各種ガラ
ス材料や、半導体用ウェハーやコンピュータ等の記憶装
置であるディスク基板用の黒鉛及びガラス状カーボン等
のカーボン基板、光学用プラスチックレンズ、カメラ用
プラスチックレンズ、眼鏡用プラスチックレンズ等のプ
ラスチック製品や、炭化珪素、窒化珪素、窒化チタン、
炭化チタン、炭化ホウ素、窒化ホウ素、アルミナ、窒化
アルミニウム、酸化珪素、酸化ベリリウム、酸化チタ
ン、酸化ジルコニウム、ムライト、スピネル、コージラ
イト、メノー石、サイアロン等のセラミック成形体また
は焼結体及び鉄、鋼、ステンレス、銅、銅合金、亜鉛、
超硬合金等の金属製品の研磨作業に用いる研磨用組成物
および研磨方法に関する。The present invention relates to a polishing composition for an aqueous slurry. More specifically, an aluminum magnetic disk which is a storage device of a computer or the like in which an aluminum substrate and a nickel substrate obtained by electroless plating nickel phosphorus on an aluminum substrate, an alumite substrate obtained by anodizing an aluminum substrate, and the like are used. Substrate and active matrix type LC
D, LCD color filter, LC for clock / calculator / camera
D or glass substrate for display such as solar cell, LS
Various glass materials such as glass substrates for I-photomasks, glass substrates for optical disks and magnetic disks or optical lenses, and carbon substrates such as graphite and glassy carbon for disk substrates used as storage devices for semiconductor wafers and computers. Plastic products such as plastic lenses for optics, plastic lenses for cameras, plastic lenses for eyeglasses, silicon carbide, silicon nitride, titanium nitride,
Ceramic molded or sintered bodies such as titanium carbide, boron carbide, boron nitride, alumina, aluminum nitride, silicon oxide, beryllium oxide, titanium oxide, zirconium oxide, mullite, spinel, cordierite, amenite, sialon, and iron, steel , Stainless steel, copper, copper alloy, zinc,
The present invention relates to a polishing composition and a polishing method used for polishing a metal product such as a cemented carbide.
【0002】[0002]
【従来の技術】磁気ディスクや光ディスク、LCD、フ
ォトマスク等、種々の用途において、基板材料の研磨に
高い表面精度が要求されている。これらの研磨には一般
に、アルミナ、ジルコニア、セリア、シリカ等の粉末を
研磨材として水に分散させた水系スラリーの研磨用組成
物が使用される。しかしこれまでの研磨用スラリーは、
研磨量が少なくて研磨作業の効率が悪く、またスクラッ
チ、オレンジピール、ピット等と呼ばれる表面欠陥が生
じたり、研磨面の形状精度が低いなどの品質上の問題が
あった。2. Description of the Related Art In various applications such as magnetic disks, optical disks, LCDs, and photomasks, high surface precision is required for polishing a substrate material. In general, a polishing composition of an aqueous slurry in which a powder of alumina, zirconia, ceria, silica, or the like is dispersed in water as an abrasive is used for the polishing. However, conventional polishing slurries
The polishing amount is small and the efficiency of the polishing operation is poor, and there are quality problems such as surface defects called scratches, orange peels, pits, etc., and low shape accuracy of the polished surface.
【0003】これを改良し研磨効率並びに研磨品質を向
上させるため、種々の研磨促進剤が添加された研磨用組
成物が検討されているが、必ずしも満足のいくものでは
無かった。また、従来の研磨用組成物は、水スラリー中
における研磨材粒子の分散安定性が充分でなく、貯蔵時
に研磨材粒子の凝集が生じ、沈澱が起こるので使用時に
再分散する必要があったり、凝集すると2次粒子が生
じ、見かけの粒子径が大きくなって研磨表面に傷を付
け、表面欠陥が生じる問題があった。In order to improve this and improve the polishing efficiency and the polishing quality, polishing compositions to which various polishing accelerators have been added have been studied, but they have not always been satisfactory. In addition, the conventional polishing composition has insufficient dispersion stability of the abrasive particles in a water slurry, causes agglomeration of the abrasive particles during storage, and requires re-dispersion at the time of use because precipitation occurs. When agglomerated, secondary particles are generated, the apparent particle diameter increases, and the polishing surface is scratched, resulting in a problem of surface defects.
【0004】[0004]
【発明が解決しようとする課題】本発明はこれらの問題
点を解決するためになされたもので、研磨速度が大で、
研磨品質が良く、研磨材料の分散安定性に優れた研磨用
組成物を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve these problems, and has a high polishing rate.
An object of the present invention is to provide a polishing composition having good polishing quality and excellent dispersion stability of a polishing material.
【0005】[0005]
【課題を解決するための手段】本発明者等は、前記目的
を達成するために鋭意検討したところ、研磨材、側鎖に
カルボキシル基とポリアルキレンオキサイド構造を有す
るポリカルボン酸系重合体(以下「ポリカルボン酸系重
合体」という。)および水を有効成分とする研磨用組成
物が、研磨量が大きくて研磨作業の効率が良く、またス
クラッチ、ピット等の表面欠陥が生じ難く、形状精度に
も優れ、かつ研磨材の分散安定性に優れることを見いだ
し、本発明を完成するに至った。Means for Solving the Problems The inventors of the present invention have made intensive studies to achieve the above object, and found that an abrasive, a polycarboxylic acid-based polymer having a carboxyl group and a polyalkylene oxide structure in a side chain (hereinafter referred to as “polycarboxylic acid polymer”). The polishing composition containing "a polycarboxylic acid-based polymer") and water as the active ingredients has a large polishing amount and good polishing efficiency, is hard to generate surface defects such as scratches and pits, and has a high shape precision. And excellent dispersion stability of the abrasive, and completed the present invention.
【0006】[0006]
【発明の実施の形態】以下、本発明を詳細に説明する。
本発明で使用されるポリカルボン酸系重合体としては、
例えば特開平6−256054号公報、特公平6−88
818号公報、特公平6−88817号公報等に記載の
ビニルエーテル−無水マレイン酸共重合体、オレフィン
−無水マレイン酸共重合体、スチレン−無水マレイン酸
共重合体等の不飽和ビニル系モノマーと不飽和ジカルボ
ン酸の共重合体のアルキレングリコール系化合物による
エステル化物がある。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail.
As the polycarboxylic acid polymer used in the present invention,
For example, Japanese Unexamined Patent Publication No.
No. 818, Japanese Patent Publication No. 6-88817, etc. and unsaturated vinyl monomers such as vinyl ether-maleic anhydride copolymer, olefin-maleic anhydride copolymer and styrene-maleic anhydride copolymer. There is an esterified product of a copolymer of a saturated dicarboxylic acid and an alkylene glycol compound.
【0007】また特開平8−12396号公報、特開昭
62−216950号公報、特開平1−226757号
公報、特開平6−206750号公報等に記載の不飽和
基として(メタ)アクリル酸エステル基を有するポリア
ルキレングリコール誘導体と、不飽和モノカルボン酸叉
は不飽和ジカルボン酸と、アリルスルホン酸、メタリル
スルホン酸等のスルホン酸基を有する単量体の共重合体
がある。(Meth) acrylic acid esters as unsaturated groups described in JP-A-8-12396, JP-A-62-216950, JP-A-1-226575, JP-A-6-206750 and the like. There is a copolymer of a polyalkylene glycol derivative having a group, an unsaturated monocarboxylic acid or unsaturated dicarboxylic acid, and a monomer having a sulfonic acid group such as allylsulfonic acid and methallylsulfonic acid.
【0008】また特開平7−53249号公報、特開平
7−215746号公報、特開平8−165157号公
報、特開平7−232945号公報等記載のポリオキシ
アルキレン誘導体からなる単量体と、カルボキシル基を
含有する単量体を必須成分とする共重合体がある。A monomer comprising a polyoxyalkylene derivative described in JP-A-7-53249, JP-A-7-215746, JP-A-8-165157, JP-A-7-232945, etc. There is a copolymer containing a group-containing monomer as an essential component.
【0009】この中でも、一般式(1)で示されるポリ
アルキレングリコールアルケニルエーテルと無水マレイ
ン酸からなる共重合体、あるいはその加水分解物及び/
又は加水分解物の塩は好適に使用される。特にR1がビ
ニル基のものは最も好適に使用される。Among them, a copolymer of polyalkylene glycol alkenyl ether represented by the general formula (1) and maleic anhydride, or a hydrolyzate thereof and / or
Alternatively, a salt of a hydrolyzate is suitably used. In particular, those in which R 1 is a vinyl group are most preferably used.
【0010】[0010]
【化2】 (R1はビニル基、アリル基、AOは炭素数2〜4のオ
キシアルキル基、nは1〜200の整数、R2は水素又
は炭素数1〜20の有機残基)Embedded image (R 1 is a vinyl group, an allyl group, AO is an oxyalkyl group having 2 to 4 carbon atoms, n is an integer of 1 to 200, and R 2 is hydrogen or an organic residue having 1 to 20 carbon atoms)
【0011】本発明における研磨材の材質は、一般に研
磨材として使用されるところの材料であれば特に限定さ
れないが、例えば、溶融褐色アルミナ、溶融白色アルミ
ナ、板状アルミナ、低ソーダアルミナ、高純度アルミ
ナ、微粒子アルミナ、活性アルミナ等の酸化アルミニウ
ム、高純度ジルコニア、低純度ジルコニア、共沈安定化
ジルコニア、電融安定化ジルコニア等の酸化ジルコニ
ア、珪酸ジルコニウム、酸化セリウム、炭化珪素、炭化
ホウ素、立方窒化ホウ素、炭化チタン、炭化タングステ
ン、窒化チタン、サイアロン、窒化珪素等の各種セラミ
ック、コロイダルシリカ、ヒュームドシリカ等の酸化珪
素、人工ダイヤモンド、天然ダイヤモンド等のダイヤモ
ンド、コランダム、ベーマイト、ガーネット、エメリ
ー、ケイ砂、トリポリ、軽石、けいそう土、ドロマイト
等の天然研磨材等、並びにこれらの混合物である。The material of the abrasive in the present invention is not particularly limited as long as it is a material generally used as an abrasive. Examples thereof include fused brown alumina, fused white alumina, plate alumina, low soda alumina, and high purity. Aluminum oxide such as alumina, fine-particle alumina, activated alumina, high-purity zirconia, low-purity zirconia, coprecipitation stabilized zirconia, zirconia oxide such as electrofusion stabilized zirconia, zirconium silicate, cerium oxide, silicon carbide, boron carbide, cubic nitriding Various ceramics such as boron, titanium carbide, tungsten carbide, titanium nitride, sialon and silicon nitride; silicon oxide such as colloidal silica and fumed silica; diamonds such as artificial diamonds and natural diamonds; corundum, boehmite, garnet, emery, silica sand , Tripoli, Stone, diatomaceous earth, natural abrasives dolomite etc., and mixtures thereof.
【0012】研磨材の粒子径は、基板の種類や、粗研磨
か仕上研磨かといった研磨目的によるので一概には言え
ないが、それ単独では粉末状であり、平均粒径で0.0
05〜50μの範囲にあり、好ましくは0.01〜10
μである。The particle size of the abrasive cannot be determined unconditionally because it depends on the type of the substrate and the purpose of polishing, such as rough polishing or finish polishing. However, the particle size of the abrasive alone is 0.00 in average.
In the range of 0.5 to 50 μm, preferably 0.01 to 10 μm.
μ.
【0013】研磨組成物中に占める研磨材の重量割合は
1〜50重量%が好ましい。また、側鎖にカルボキシル
基とポリアルキレンオキサイド構造を有するポリカルボ
ン酸系重合体の添加量は研磨材に対して、0.1〜50
重量%の範囲で使用することができる。好適には0.1
〜10重量%であり、特に好適には0.5〜6重量%で
ある。The weight ratio of the abrasive in the polishing composition is preferably 1 to 50% by weight. The amount of the polycarboxylic acid polymer having a carboxyl group and a polyalkylene oxide structure in the side chain is 0.1 to 50 with respect to the abrasive.
It can be used in the range of weight%. Preferably 0.1
-10% by weight, particularly preferably 0.5-6% by weight.
【0014】使用する水は特に限定されず、純水、脱イ
オン水、井戸水、水道水等を使用することができる。水
の添加量は研磨材と側鎖にカルボキシル基とポリアルキ
レンオキサイド構造を有するポリカルボン酸系重合体が
目的とする添加割合になるよう調整することができる。The water used is not particularly limited, and pure water, deionized water, well water, tap water and the like can be used. The amount of water can be adjusted so that the abrasive and the polycarboxylic acid polymer having a carboxyl group and a polyalkylene oxide structure in the side chain have the desired addition ratio.
【0015】研磨用組成物は、前記の各成分の他に、研
磨促進剤、ゲル化防止剤、界面活性剤、分散剤、防腐
剤、安定化剤、消泡剤及びpH調整のための酸またはア
ルカリを含有しても良い。The polishing composition may contain, in addition to the above components, a polishing accelerator, an anti-gelling agent, a surfactant, a dispersant, a preservative, a stabilizer, a defoaming agent and an acid for adjusting pH. Or you may contain alkali.
【0016】研磨用組成物の製造方法には特に限定され
ず、例えば粉砕、分級した研磨材粒子を、水と側鎖にカ
ルボキシル基とポリアルキレンオキサイド構造を有する
ポリカルボン酸系重合体と混合してスラリーとし、研磨
用組成物とすることが出来る。また、研磨材粒子を湿式
粉砕する工程や、湿式分級する工程等の研磨材粒子を製
造する工程において、凝集や沈降を防ぐ目的で、側鎖に
カルボキシル基とポリアルキレンオキサイド構造を有す
るポリカルボン酸系重合体を予め添加して研磨材粒子を
製造し、結果的に研磨材粒子と側鎖にカルボキシル基と
ポリアルキレンオキサイド構造を有するポリカルボン酸
系重合体との混合物とし、当該混合物を用いて研磨用組
成物を調整することもできる。The method for producing the polishing composition is not particularly limited. For example, ground and classified abrasive particles are mixed with water and a polycarboxylic acid polymer having a carboxyl group and a polyalkylene oxide structure in a side chain. To obtain a polishing composition. Further, in the step of producing abrasive particles such as a step of wet grinding the abrasive particles or a step of wet classification, a polycarboxylic acid having a carboxyl group and a polyalkylene oxide structure in a side chain for the purpose of preventing aggregation and sedimentation. Abrasive particles are manufactured by adding a polymer in advance, and as a result, a mixture of the abrasive particles and a polycarboxylic acid polymer having a carboxyl group and a polyalkylene oxide structure in a side chain, and using the mixture. The polishing composition can also be adjusted.
【0017】本発明の研磨用組成物は種々の研磨に使用
することができる。例えば、アルミサブストレート及び
アルミサブストレート上にニッケルリンを無電解メッキ
等したニッケルサブストレート、アルミサブストレート
を陽極酸化したアルマイトサブストレート等が使用され
るコンピューター等の記憶装置であるアルミニウム磁気
ディスク基板や、アクティブマトリックス型LCD、液
晶カラーフィルター、時計・電卓・カメラ用LCDある
は太陽電池等のディスプレイ用ガラス基板、LSIフォ
トマスク用ガラス基板、光ディスクや磁気ディスク用の
ガラス基板あるいは光学用レンズなどの各種ガラス材料
や、半導体用ウェハーやコンピュータ等の記憶装置であ
るディスク基板用の黒鉛及びガラス状カーボン等のカー
ボン基板、光学用プラスチックレンズ、カメラ用プラス
チックレンズ、眼鏡用プラスチックレンズ等のプラスチ
ック製品や、炭化珪素、窒化珪素、窒化チタン、炭化チ
タン、炭化ホウ素、窒化ホウ素、アルミナ、窒化アルミ
ニウム、酸化珪素、酸化ベリリウム、酸化チタン、酸化
ジルコニウム、ムライト、スピネル、コージライト、メ
ノー石、サイアロン等のセラミック成形体または焼結体
及び鉄、鋼、ステンレス、銅、銅合金、亜鉛、超硬合金
等の金属製品に好適に使用される。The polishing composition of the present invention can be used for various types of polishing. For example, an aluminum magnetic disk substrate, which is a storage device of a computer or the like in which an aluminum substrate and a nickel substrate obtained by electroless plating nickel phosphorus on an aluminum substrate, an alumite substrate obtained by anodizing an aluminum substrate, and the like are used. , Active matrix LCD, liquid crystal color filters, LCDs for watches, calculators, cameras, glass substrates for displays such as solar cells, glass substrates for LSI photomasks, glass substrates for optical disks and magnetic disks, and optical lenses Glass materials, carbon substrates such as graphite and vitreous carbon for disk substrates which are storage devices for semiconductor wafers and computers, optical plastic lenses, plastic lenses for cameras, plastic glasses for glasses Plastic products such as silicon carbide, silicon nitride, titanium nitride, titanium carbide, boron carbide, boron nitride, alumina, aluminum nitride, silicon oxide, beryllium oxide, titanium oxide, zirconium oxide, mullite, spinel, cordierite, It is suitably used for ceramic molded products or sintered products such as stones and sialons and metal products such as iron, steel, stainless steel, copper, copper alloys, zinc and cemented carbides.
【0018】[0018]
【実施例】次に実施例により本発明をさらに詳細に説明
する。Next, the present invention will be described in more detail by way of examples.
【0019】(実施例1〜6、比較例1〜3)純水と、
酸化アルミニウム(α−Al2O3、平均粒子径1.2
μ)、及び下記に列挙するポリカルボン酸系重合体より
スラリー状の研磨用組成物を調整した。 重合体:メトキシポリエチレングリコールアクリル酸
エステル−アクリル酸共重合体ナトリウム塩 重合体:ポリエチレングリコールモノアリルエーテル
−無水マレイン酸共重合体の加水分解物のアンモニウム
塩 重合体:メトキシポリエチレングリコールビニルエー
テル−マレイン酸共重合体の加水分解物のアンモニウム
塩(Examples 1 to 6, Comparative Examples 1 to 3)
Aluminum oxide (α-Al 2 O 3 , average particle size 1.2
μ) and a slurry-like polishing composition was prepared from the polycarboxylic acid-based polymers listed below. Polymer: sodium salt of methoxypolyethylene glycol acrylate-acrylic acid copolymer Polymer: ammonium salt of hydrolyzate of polyethylene glycol monoallyl ether-maleic anhydride copolymer Polymer: methoxypolyethylene glycol vinyl ether-maleic acid Ammonium salt of polymer hydrolyzate
【0020】酸化アルミニウムは、研磨用組成物中に占
める割合で20重量%となる様にした。ポリカルボン酸
系重合体は、酸化アルミニウムに対する重量%で、1な
いしは5となる様にした。また比較のため、ポリカルボ
ン酸系重合体を含まないスラリー状の研磨用組成物と、
側鎖にポリアルキレンオキサイド構造を有さないを含
む研磨用組成物も調整した。 重合体:ポリアクリル酸アンモニウム塩The content of the aluminum oxide in the polishing composition was adjusted to 20% by weight. The polycarboxylic acid-based polymer was adjusted to 1 to 5 by weight% based on aluminum oxide. For comparison, a slurry-like polishing composition containing no polycarboxylic acid-based polymer,
A polishing composition containing no polyalkylene oxide structure in the side chain was also prepared. Polymer: ammonium polyacrylate
【0021】研磨には研磨機として両面ポリッシングマ
シン、研磨パットとしてスェードクロスを用い、アルミ
ニウムの130mm外径の円輪盤状基板の両面に、厚さ3
0μのニッケル・りんメッキを施したものを被研磨体と
して用いた。この被研磨体を研磨機に取付け、研磨パッ
トを当接し、被研磨体と研磨パットを相対的に摺動して
10分間研磨した。研磨圧力は50g/cm2である。研
磨の間、被研磨体と研磨パットの間に研磨用組成物を2
00ml/分の割合で供給した。For polishing, a double-side polishing machine was used as a polishing machine, and a suede cloth was used as a polishing pad.
A material to which 0 μm nickel-phosphorus plating was applied was used as a polishing object. The object to be polished was attached to a polishing machine, a polishing pad was brought into contact with the object, and the object to be polished and the polishing pad were slid relatively to each other for polishing for 10 minutes. The polishing pressure is 50 g / cm2. During polishing, apply the polishing composition between the object to be polished and the polishing pad.
It was supplied at a rate of 00 ml / min.
【0022】研磨の前後に、被研磨体の厚さを測定して
研磨速度を算出した。また研磨後の研磨表面を検査し
て、表面欠陥を測定した。また、研磨用組成物の分散安
定性を評価するため、研磨用組成物を1日放置した後の
沈降状態を観察した。この実験結果を表1に示す。Before and after polishing, the thickness of the object to be polished was measured to calculate the polishing rate. The polished surface after polishing was inspected to measure surface defects. Further, in order to evaluate the dispersion stability of the polishing composition, a settling state after the polishing composition was left for one day was observed. Table 1 shows the experimental results.
【0023】[0023]
【表1】 [Table 1]
【0024】表1から明かなように、比較例1〜3に比
べ、実施例1〜6、中でも実施例3〜6は、研磨速度と
研磨精度、及び分散安定性に優れるものであった。また
研磨後の被研磨体の断面形状を観察し、縁ダレ(形状精
度)についても評価したが、いずれの実施例でも問題な
い範囲であった。As is clear from Table 1, Examples 1 to 6, and especially Examples 3 to 6, were superior to Comparative Examples 1 to 3 in polishing rate, polishing accuracy, and dispersion stability. Further, the cross-sectional shape of the object to be polished was observed, and the edge sag (shape accuracy) was also evaluated.
【0025】(実施例7〜12、比較例4〜6)研磨材
として酸化セリウム(平均粒子径0.6μ)を用い、被
研磨体として円輪板状ガラスディスクを用いた以外は、
実施例1〜6及び比較例1〜3と同様にして試験した。
その結果を表2に示す。(Examples 7 to 12, Comparative Examples 4 to 6) Except that cerium oxide (average particle diameter: 0.6 μm) was used as an abrasive and a circular disk glass disk was used as an object to be polished.
The test was performed in the same manner as in Examples 1 to 6 and Comparative Examples 1 to 3.
Table 2 shows the results.
【0026】[0026]
【表2】 [Table 2]
【0027】表2から明かなように、比較例4〜6に比
べ、実施例7〜12、中でも実施例9〜12は、研磨速度と
研磨精度、及び分散安定性に優れるものであった。As is clear from Table 2, Examples 7 to 12, and particularly Examples 9 to 12, were superior to Comparative Examples 4 to 6 in polishing rate, polishing accuracy, and dispersion stability.
【0028】(実施例13〜18、比較例7〜9)被研
磨体としてポリカーボネート製の円輪板状基板を用い、
研磨圧力200g/cm2、研磨用組成物の供給速度を2
l/分とした以外は、実施例1〜6及び比較例1〜3と
同様にして試験した。尚、研磨量は研磨前後の重量より
算出した。その結果を表3に示す。(Examples 13 to 18 and Comparative Examples 7 to 9) A circular disk-shaped substrate made of polycarbonate was used as the object to be polished.
Polishing pressure 200 g / cm2, supply rate of polishing composition 2
The test was carried out in the same manner as in Examples 1 to 6 and Comparative Examples 1 to 3, except that 1 / min was used. The polishing amount was calculated from the weight before and after polishing. Table 3 shows the results.
【0029】[0029]
【表3】 [Table 3]
【0030】表3から明らかなように、比較例7〜9に
比べ、実施例13〜18、中でも実施例15〜18は、
研磨速度、研磨精度及び分散安定性に優れるものであっ
た。As is clear from Table 3, Examples 13 to 18, especially Examples 15 to 18, were compared with Comparative Examples 7 to 9.
The polishing rate, polishing accuracy and dispersion stability were excellent.
【0031】(実施例19〜24、比較例10〜12)
研磨材として酸化アルミニウム(α−Al2O3、平均粒
径1.2μm)を用い、被研磨体として円盤状カーボン
基板を用い、実施例1〜6、比較例1〜3と同じ方法に
より、研磨圧力100Kgf/cm2、研磨時間30分、研磨
用組成物の供給速度50cc/分の条件で研磨試験を実
施した。ポリカルボン酸系重合体を添加しなかった時の
研磨速度を1とした時の研磨速度比を研磨前後での被研
磨体の厚さから算出し、触針式表面粗さ計により表面粗
さを測定した。(Examples 19 to 24, Comparative Examples 10 to 12)
Aluminum oxide (α-Al 2 O 3 , average particle size 1.2 μm) was used as the abrasive, and a disc-shaped carbon substrate was used as the object to be polished. The same method as in Examples 1 to 6 and Comparative Examples 1 to 3 was used. The polishing test was performed under the conditions of a polishing pressure of 100 kgf / cm2, a polishing time of 30 minutes, and a supply rate of the polishing composition of 50 cc / min. The polishing rate ratio when the polishing rate when the polycarboxylic acid-based polymer was not added was set to 1 was calculated from the thickness of the object to be polished before and after polishing, and the surface roughness was measured using a stylus type surface roughness meter. Was measured.
【0032】[0032]
【表4】 [Table 4]
【0033】表4から明らかなように、比較例10〜1
2に比べ、実施例19〜24、中でも実施例21〜24
は、研磨速度、研磨精度及び分散安定性に優れるもので
あった。As apparent from Table 4, Comparative Examples 10 to 1
As compared with Example 2, Examples 19 to 24, especially Examples 21 to 24
Was excellent in polishing rate, polishing accuracy and dispersion stability.
【0034】[0034]
【発明の効果】本発明の粉状研磨用組成物は、側鎖にカ
ルボキシル基とポリアルキレンオキサイド構造を有する
ポリカルボン酸系重合体と研磨材及び溶媒からなるスラ
リーを使用した時と同様に、研磨量が大きく研磨作業の
効率がよく、研磨表面の欠陥が生じ難く、形状精度にも
優れており、各種の精密研磨に適している。The powdery polishing composition of the present invention can be prepared in the same manner as when a slurry comprising a polycarboxylic acid polymer having a carboxyl group and a polyalkylene oxide structure in a side chain, an abrasive and a solvent is used. The polishing amount is large, the polishing operation is efficient, the defects on the polished surface hardly occur, and the shape accuracy is excellent, so that it is suitable for various precision polishing.
Claims (6)
アルキレンオキサイド構造を有するポリカルボン酸系重
合体を含有する研磨用組成物。1. A polishing composition comprising an abrasive and a polycarboxylic acid polymer having a carboxyl group and a polyalkylene oxide structure in a side chain.
ルキレンオキサイド構造を有するポリカルボン酸系重合
体及び水を含有する研磨用組成物。2. A polishing composition comprising an abrasive, a polycarboxylic acid polymer having a carboxyl group and a polyalkylene oxide structure in a side chain, and water.
オキサイド構造を有するポリカルボン酸系重合体が、一
般式(1)で示されるポリアルキレングリコールアルケ
ニルエーテルと無水マレイン酸からなる共重合体、ある
いはその加水分解物及び/又は加水分解物の塩であるこ
とを特徴とする請求項1又は請求項2の研磨用組成物。 【化1】 (R1はビニル基、アリル基、AOは炭素数2〜4のオ
キシアルキル基、nは1〜200の整数、R2は水素又
は炭素数1〜20の有機残基)3. A polycarboxylic acid-based polymer having a carboxyl group and a polyalkylene oxide structure in a side chain is a copolymer comprising a polyalkylene glycol alkenyl ether represented by the general formula (1) and maleic anhydride, or a copolymer thereof. 3. The polishing composition according to claim 1, which is a hydrolyzate and / or a salt of the hydrolyzate. Embedded image (R 1 is a vinyl group, an allyl group, AO is an oxyalkyl group having 2 to 4 carbon atoms, n is an integer of 1 to 200, and R 2 is hydrogen or an organic residue having 1 to 20 carbon atoms)
の研磨用組成物を用いることを特徴とする研磨方法。4. A polishing method comprising using the polishing composition according to claim 1.
求項4の研磨方法。5. The polishing method according to claim 4, wherein the object to be polished is a carbon substrate.
の研磨用組成物からなるカーボン基板用研磨用組成物。6. A polishing composition for a carbon substrate, comprising the polishing composition according to claim 1. Description:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8370298A JPH11228939A (en) | 1997-12-11 | 1998-03-30 | Abrasive composition and abrading method |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34093397 | 1997-12-11 | ||
| JP9-340933 | 1997-12-11 | ||
| JP8370298A JPH11228939A (en) | 1997-12-11 | 1998-03-30 | Abrasive composition and abrading method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11228939A true JPH11228939A (en) | 1999-08-24 |
Family
ID=26424735
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8370298A Pending JPH11228939A (en) | 1997-12-11 | 1998-03-30 | Abrasive composition and abrading method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11228939A (en) |
-
1998
- 1998-03-30 JP JP8370298A patent/JPH11228939A/en active Pending
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