JPH11202009A - Near magnetic field probe, near magnetic field probe unit, near magnetic field probe array, and magnetic field measurement system - Google Patents

Abstract

(57) Abstract: The present invention relates to a near-field probe for detecting a current by detecting a current by approaching a measurement target and detecting a current required for identifying a current to be a noise source. It is an object of the present invention to reduce the measurement error by increasing the positioning accuracy of the near magnetic field probe. The present invention relates to a loop coil (2) constituted by a plane.
In the near-magnetic field probe 1 having the detection section as a detecting portion, wherein the loop coil 2 (the conductor 5 constituting the loop coil 2) is laminated at approximately the same position with an insulator 6 interposed therebetween. Since the loop coils 2 constituting the near-magnetic field probe 1 are stacked at substantially the same position via the insulator 6 as described above, the loop coils 2 are stacked when approaching an object to be measured (such as the wiring 8b of the printed wiring board 8). In addition, it is possible to perform positioning by comparing the outputs of the plurality of coils, thereby performing highly accurate measurement.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to various types of electric / electrical machines such as office equipment such as electrophotographic copying machines, facsimile machines, printing machines and personal computers, household electric equipment, industrial equipment and the like.
Detects electromagnetic noise from electronic devices, and also detects noise from printed circuit boards and the like that are inherent in various devices,
The present invention relates to an inspection device for EMC regulations and electromagnetic interference countermeasures used for the countermeasure. In particular, a proximity magnetic field is required when a current to be a noise source is specified by detecting a current close to an object to be measured. So-called "near-field probe",
And a "near-field probe unit" and a "near-field probe array" having the near-field probe, and a "magnetic field measurement system" having the near-field probe, the near-field probe unit, and the near-field probe array in the magnetic field measurement unit. Things.

[0002]

2. Description of the Related Art Conventionally, EMC measures have been taken at 10m and 30m in open sites and anechoic chambers stipulated by legal regulations.
There is a way to take countermeasures based on the result of measuring electromagnetic waves at a distant place using a predetermined antenna. In addition, there is a method in which an electromagnetic field from a target is detected by a probe brought close before measurement at such an authentication site or the like, and a countermeasure against the target is taken. The related art is shown below.

Japanese Patent Application Laid-Open No. 6-58969 discloses a three-dimensional XYZ table for three-dimensionally detecting a magnetic field of unnecessary radiation generated from a printed wiring board (PCB) on which electronic components are mounted. Set the printed wiring board on
Measure the intensity distribution of the undesired radiation magnetic field from above the printed wiring board with a near-field probe, which is a sensor, store the data in the memory in the measuring instrument, and then reverse the printed wiring board to perform the same measurement. There is disclosed an electromagnetic interference measurement device capable of measuring the intensity distribution of the magnetic field of the unnecessary radiation on the front and the back by calling the contents of the memory. Japanese Patent Application Laid-Open No. 6-58970 discloses a double-sided electromagnetic interference measuring device which uses an array-like sensor table and a sensor moving means and eliminates the necessity of turning over.

Further, Japanese Patent Application Laid-Open No. Sho 62-106379 discloses a magnetic field measuring probe which is configured to detect a signal generated only by a magnetic field in a symmetrical loop coil and a circuit in a shield box following the symmetrical loop coil. .

[0005]

However, in JP-A-6-58969 and JP-A-6-58970, there is no particular description about the positioning of the near-magnetic field probe as a sensor, and the position of the near-field probe is simply a simple shape. Only matching. Therefore, a more accurate positioning method with a simple configuration is required. JP-A-62-106379
In the publication, the magnetic field measurement probe is used by hand, but the coil is formed on a printed wiring board, and it is difficult to configure a small coil size of about 1 mm square or less, and it is relatively large. It is intended to detect parts. In addition, there is no description about positioning, and therefore, there is a drawback that it is not suitable for measurement at a level where positioning is a problem.

The present invention has been made in view of the above circumstances, and provides a near-magnetic field probe for detecting a current by performing a near-field detection necessary for identifying a current that is brought close to an object to be measured and becomes a noise source; and An object of the present invention is to provide a near-magnetic field probe unit and a near-field probe array including the near-field probe, and a near-field probe, a near-field probe unit, and a magnetic field measurement system including a near-field probe array in a magnetic field measurement unit. In particular, an object of the present invention is to reduce the measurement error by increasing the positioning accuracy of a near-field probe, a near-field probe unit, or a near-field probe array with a simple configuration.

[0007]

In order to achieve the above object, an invention according to claim 1 is a near-magnetic field probe having a loop coil formed of a plane as a detection unit, wherein the loop coil is roughly arranged via an insulator. It is characterized by being laminated at the same position, such that the loop coil constituting the near magnetic field probe is laminated at substantially the same position via an insulator, when approaching the measurement object,
Positioning can be performed by comparing outputs of a plurality of stacked coils.

According to a second aspect of the present invention, there is provided a near-magnetic field probe having a loop coil formed as a plane as a detecting unit, wherein the loop coil is formed of a conductive thin film, and the thin film coil is substantially the same via an insulating thin film. It is characterized by being laminated at a position, as described above, by laminating the thin film coil constituting the near magnetic field probe at substantially the same position via an insulating thin film, when approaching the measurement object,
Positioning can be performed by comparing outputs of a plurality of stacked coils. In addition, since the coil and the insulating layer to be laminated are composed of a thin film, a thin coil can be formed with a small size, and the insulating layer can be formed thin. It becomes possible.

The invention according to claim 3 is the invention according to claim 1 or 2
In the near-magnetic field probe described above, a transmission path following the coil section on a substrate on which a coil is laminated, an amplifier section or an impedance converter section to which each output of the coil section is input via the transmission path, and the amplifier section Alternatively, a display unit for displaying the output of the impedance converter unit is provided, and the coil unit, the transmission line, the amplifier unit or the impedance converter unit, and the display By providing the unit, the function of measuring the magnetic field can be realized only by a probe having a simple configuration.

According to a fourth aspect of the present invention, at least two or more surfaces of a support member having a plurality of surfaces are provided.
Or a near-magnetic field probe having a structure in which a near-field probe is attached to two or more surfaces of a support member having a plurality of surfaces as described above. By using a unit, detection can be performed with two or more probes pointing in different directions, so that measurement with high positioning accuracy is possible and magnetic field vector detection is possible.

According to a fifth aspect of the present invention, a plurality of near-magnetic field probes according to the first or second or third aspect or a plurality of near-magnetic field probe units according to the fourth aspect are provided on a support member to form an array. By arranging a plurality of near-magnetic field probes or near-magnetic field probe units and forming an array of near-magnetic field probes in this manner, it is possible to perform measurement with each of the plurality of arranged probes or each probe unit. Measurement with high positioning accuracy becomes possible, and measurement of magnetic field distribution becomes possible.

The invention according to claim 6 is the first or second invention.
An amplifier unit or an impedance converter unit is connected to the near-magnetic field probe described above, the near-magnetic field probe unit described in claim 4, or the near-field probe array according to claim 5, and the amplifier unit or the impedance converter unit is connected to the measurement unit. By providing a magnetic field measurement system in which a near-field probe or a near-field probe unit or a near-field probe array is connected to a measurement section via an amplifier section or an impedance converter section as described above, It is possible to provide a system that can perform high-precision positioning and detect a minute signal.

According to a seventh aspect of the present invention, in the near field probe according to the third aspect or the near field probe in the magnetic field measurement system according to the sixth aspect, the near field probe is connected to the coil portion via a transmission line on a substrate on which the probe is manufactured. And an amplifier section or an impedance converter section composed of a chip component is connected to the pad, and the chip component is provided on a pad provided on a substrate for producing a probe in this way. By connecting the amplifier unit or the impedance converter unit constituted by the above, signal processing such as amplification can be performed in the vicinity of the signal source (coil).
/ N ratio can be improved, and a minute signal can be measured.

According to an eighth aspect of the present invention, in the near magnetic field probe according to the third aspect or the near magnetic field probe in the magnetic field measuring system according to the sixth aspect, a coil portion, a transmission line, an amplifier portion, It is characterized in that the impedance converter section is provided in a semiconductor process. Thus, by providing a coil section, a transmission line, an amplifier section or an impedance converter section on a substrate in a semiconductor process, high-precision The near-field probe can be realized with a compact configuration, and signal processing such as amplification can be performed near the signal source (coil). Therefore, the S / N ratio can be improved, and a small signal can be measured.

According to a ninth aspect of the present invention, there is provided a near-magnetic field probe according to any one of the first, second, third, seventh and eighth aspects or a plurality of near-field probe units according to the fourth aspect on a support member. In addition, the size of the coils of the plurality of near-field probes or the near-field probe unit is changed, and a configuration including a plurality of probes having different coil dimensions as described above is provided. By
Measurement can be performed with high positioning accuracy,
And because the magnetic field can be measured for each coil size,
Subsequent to rough magnetic field measurement with a probe having a large coil size capable of measuring a wide area, detailed magnetic field measurement can be performed with a probe having a smaller coil size.

The invention according to claim 10 is the invention according to claims 1, 2, and
A near-field probe according to any one of claims 3, 7, and 8, a near-field probe unit according to claim 4 or 10, a near-field probe array according to claim 5, and a near-field probe, near-field probe unit, or near field A means for moving the probe array in three dimensions, and a measuring unit for detecting a signal obtained by the near magnetic field probe or the near magnetic field probe unit or the near magnetic field probe array. High-precision magnetic field distribution measurement is possible by moving the near-field probe or near-field probe unit or near-field probe array in three dimensions (of course, including one-dimensional and two-dimensional movements). And positioning can be performed with high accuracy.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail based on illustrated embodiments.

(Embodiment 1) First, an embodiment of the present invention will be described. FIG. 1 is an explanatory view of a configuration and a manufacturing method of a near-magnetic field probe according to an embodiment of the present invention. As an example of a method for manufacturing a near-field probe, first, a conductive foil 5 such as a metal foil is laminated via an insulating sheet 6 as shown in FIG. At the time of this lamination, bonding is performed with an epoxy-based adhesive or the like except for the connection pad portion 4. Reference numeral 7 in FIG.
The region indicated by is the bonded portion. Thereafter, as shown in FIG. 1C, the laminate is cut into the shape of the coil portion 2, the parallel line portion 3 serving as a transmission path, and the connection pad portion 4, and unnecessary portions are removed. The near-field probe 1 having the structure shown in the plan view of (d) and the side view of (e) is obtained. Although the shape of the coil portion 2 is shown in FIG. 1 as an example of a circular loop coil, it may be a rectangular loop coil or the like.

FIG. 2 is a diagram showing an example of use of the near-field probe of this embodiment. FIG. 2 (a) shows a method of using a near-field probe to measure the wiring of a printed circuit board (PCB) and the like as a measurement object. FIG. 1B is a diagram illustrating a schematic configuration example of a measurement system when measurement is performed, and FIG. 2B is a diagram of the near-field probe and the PCB of FIG. The voltage (induced electromotive force) generated by the magnetic field generated from the measurement object linked to the coil unit 2 is obtained at both ends of the pad unit 4 as a signal via the parallel line unit 3. The oscilloscope 1 is connected via a changeover switch 9 to the other end of the connecting wire 9a.
If it is connected to a measuring instrument such as 0, a simple measuring system is configured. FIG. 2 shows an example of the near-magnetic field probe 1 in which the coil unit 2 is configured by three coils having the same configuration.
In this example, the coil shape is rectangular, but the structure in which conductive foils 5 and insulating sheets 6 are alternately stacked is the same as that in FIG. FIG. 2 shows an example of a wiring 8b for connecting between LSIs 8a on a printed wiring board (PCB) 8 as an example of a target measurement object. The near-field probe 1 is brought close to the wiring 8b. At this time, the determination that the coil portion 2 of the probe 1 is immediately above the wiring can be easily performed by comparing the outputs from the coils on both sides of the coil portion 2 with the oscilloscope 10 to easily increase the positioning accuracy in one axial direction. . That is, when the center axis of the coil unit 2 is inclined with respect to the PCB 8 or when the wiring 8 to be measured on the PCB 8 is
If there is a difference in the distance between the coil b and the coils on both sides of the coil section 2, a difference occurs in the outputs of the coils on both sides. If the coil section 2 is positioned so as to eliminate this difference, the coil section 2 of the probe 1 Accurate positioning can be performed directly above.

FIG. 3 is a diagram showing another example of use of the near-magnetic field probe of the present embodiment. In addition to the configuration of the measurement system similar to that of FIG. This is an example in which a spacer 11 is attached to the first embodiment. As shown in FIG. 3, when a wiring 8b on a printed wiring board (PCB) 8 or the like is to be measured, a spacer 11 previously provided on the front surface of the coil unit 2 of the near-magnetic field probe 1 is attached to the PCB 8.
Since the distance between the PCB 8 and the probe is kept constant by making contact with the wiring 8b, the positioning can be performed only in the parallel movement direction, and the positioning of the near-field probe 1 can be made easier.

FIG. 4 is a view showing still another example of use of the near-magnetic field probe according to the present embodiment. In this example, a probe having a curved surface (for example, a printed wiring board 1 having a curved surface) is shown.
2) The wiring 12b and the like on the top are used as objects to be measured, and the coil section 2 of the near-magnetic field probe 1 has a configuration including five laminated coils. When the wiring 12b or the like on the printed wiring board 12 having a curved surface as shown in FIG. 4 is to be measured, the spacer 13 attached to the front surface of the coil unit 2 is configured with a curved surface and shown in FIG. By comparing the outputs of the two coils on both sides of the near-magnetic field probe 1 composed of five coils as described above, positioning accuracy of the angle of contact and positioning in the parallel movement direction can be performed.

As described above, in the present embodiment, the loop coils 2 constituting the near-magnetic field probe 1 are stacked at substantially the same position via the insulator 6, so that the loop coils 2 are stacked when approaching the object to be measured. Since positioning can be performed by comparing the outputs of the plurality of coils, highly accurate positioning can be performed with a simple configuration, and highly accurate measurement can be performed. The conductive foil 5 forming the coil part 2, the parallel line part 3, and the pad part 4 is made of copper (Cu), aluminum (A
l), a metal material such as silver (Ag), gold (Au), and platinum (Pt), or another conductive material. The insulating sheet 6 may be a flexible substrate such as polyethylene terephthalate or polyimide, or an insulating substrate such as glass or quartz depending on the process. The same configuration can be realized by laminating an insulating substrate on which a conductive foil such as an Al foil is formed in advance.

(Embodiment 2) Next, a second embodiment of the present invention will be described. 5 and 6 are explanatory views of a method and a configuration of a near-magnetic field probe according to an embodiment of the present invention. FIG. 5 shows a process of manufacturing a near-field probe, and FIG. 2 shows a configuration of a magnetic field probe. That is, the near-magnetic field probe 20 of this embodiment is different from the near-field probe 20 shown in FIGS.
(C), it is manufactured through each step in the order of FIG. The drawings of each process are shown together with the plan view and the cross-sectional view. As shown in FIG. 6, the near-magnetic field probe 20
A coil section 22 having a laminated structure made of a conductive thin film, a transmission path (parallel line) section 23 for the output thereof, and a pad section 24 connected to the transmission path are formed thereon. An example having a structure in which probes are stacked is shown.

As an example of a method of manufacturing the near-field probe of this embodiment, first, a first coil, a first transmission line (parallel line), and a first pad are formed on a quartz substrate 21. An Al thin film is formed as a first conductive thin film by a sputtering method. After that, the first coil 22a and the first transmission line (the first transmission line) formed of the first conductive thin film are formed by a general photolithography technique and wet etching using H ₃ PO ₄ + HNO ₃ + CH ₃ COOH + H ₂ O. A first probe 20a is formed by providing a parallel line 23a and a first pad portion 24a (FIG. 5A). Next, after forming a SiO ₂ film by a sputtering method, RIE (Reac) using a general photolithography technique and CF ₄ + H ₂ is performed.
1st coil 22a and 1st coil 22a
A first insulating layer 25a is formed on the transmission path 23a (FIG. 5B). Next, the second conductive thin film is formed of the first insulating layer 25 with Al in the same manner as in the process of forming the first conductive thin film.
a, and a general photolithography technique as described above, and H ₃ PO ₄ + HNO ₃ + CH ₃ COOH + H ₂
By wet etching using O, a second coil 22b, a second transmission line (parallel line) 23b, and a second pad portion 24b made of a second conductive thin film are provided to provide a second probe 20b. After the formation, the second insulating layer 25b is formed of SiO ₂ similarly to the first insulating layer 25a, and the second coil 22b and the second transmission line (parallel line) are formed.
23b (FIG. 5 (c)). Next, a third conductive thin film is formed of Al in the same manner as the first and second conductive thin films and is formed on the second insulating layer 25b. , H ₃ PO ₄ + HNO ₃ + C
A _third coil 22c composed of a third conductive thin film is formed by wet etching using H ₃ COOH + H ₂ O.
The third probe 20c is formed by providing a third transmission path (parallel line) 23c and a third pad portion 24c (FIG. 6). Hereinafter, if necessary, an insulating layer, a coil, a transmission line, and a pad portion are sequentially formed in the same manner as described above, and a fourth probe,
A fifth magnetic field probe having a multilayer structure in which a plurality of probes made of a conductive thin film are stacked via an insulating thin film can be obtained.

According to the above-described method of manufacturing a probe using a thin film, a probe component such as a coil can be formed with a small dimension, and an insulating layer can be formed thin. Therefore, coils can be stacked at a smaller interval. And a near-field probe that can be positioned with higher resolution. Therefore, in the near-magnetic field probe 20 of the present embodiment, it is easy to position the coil portion 22 with respect to a smaller measurement target, and arbitrarily high-precision measurement can be performed.

FIG. 7 shows another example of the present embodiment. In the above-described manufacturing process, the first insulating layer 25a is formed on the first insulating layer 25a.
Of the second insulating layer 25b.
Is formed up to the second pad portion 24b, and a through hole 26 is formed in the insulating layer on the first and second pad portions 24a and 24b.
This is an example in which is formed. Thus, after the formation of the first and second insulating layers 25a and 25b including the respective pad portions, the first and second insulating layers 25a and 25b are formed.
The through holes 26 may be provided in the second insulating layers 25a and 25b so as to be electrically connected to the respective pad portions 24a and 24b.

The coils 22a, 22b, 22c, transmission lines (parallel lines) 23a, 23b, 23c, pads 24
a, 24b, and 24c are made of a material other than Al,
A metal material such as Ag, Au, Pt, or another conductive material may be used. The substrate 21 may be an insulating substrate other than quartz or a flexible insulating substrate such as polyethylene terephthalate or polyimide. The method of forming the conductive thin film of Al or the like may be a sputtering method or another film forming method such as a vapor deposition method. Insulating layers such as SiO ₂ can be formed by sputtering,
EB (Electron Beam) evaporation method and CVD (Chemical Vapo)
Other film formation methods such as an (r Deposition) method may be used. As an insulating layer material, other insulating materials such as Si ₃ N ₄ may be used in addition to SiO ₂ . Although the etching of the insulating layer may be wet etching, when the substrate is also etched, the back surface of the substrate needs to be protected by a resist or the like.

(Embodiment 3) Next, an embodiment of claim 3 will be described. FIG. 8 is a plan view of a near-magnetic field probe according to a third embodiment of the present invention. In this embodiment, a near-magnetic field probe 20 having a configuration in which three probes similar to those in the second embodiment are stacked on a substrate 21 ′ is manufactured, and the output of each coil of the coil unit 22 is output on the same substrate 21 ′. This is an example of a near-magnetic field probe 27 in which an input amplifier unit 29 and a display device 31 for displaying the output of the amplifier unit 29 are provided, and a detection unit (probe) and a measurement unit are integrated.

More specifically, the first probe of the first probe 20 (in this example, the probe having the configuration shown in FIG. 7) formed on the substrate 21 'through the same manufacturing process as in the second embodiment. Pad 24a-1 on one side of pad portion 24a
Is connected to the inner conductor of the coaxial cable 28a, and the pad 24a-2 on the other side of the first pad 24a is connected to the outer conductor of the coaxial cable 28a. And coaxial cable 2
The other end of 8a is connected to the amplifier unit 29. Similarly, pads 24b-1 and 24c-1 on one side of the second and third pad portions 24b and 24c of the second and third probes of the probe 20, respectively.
To the inner conductors of the coaxial cables 28b and 28c, respectively, and connect the coaxial cables 28b and 2c to the pads 24b-2 and 24c-2 on the other side of the second and third pads 24b and 24c.
8c are connected. Then, the other ends of the coaxial cables 28b and 28c are connected to the amplifier unit 29. The amplifier 29 includes an AD converter 29a in addition to the amplifier. The output of the AD converter 29a is input to the display device 31 via the changeover switch 30. Therefore, the output of each coil of the probe 20 is amplified and A / D converted by the amplifier unit 29, input to the display device 31, and the measurement result is displayed. The switching of each probe can be performed by the changeover switch 30.

By providing the amplifier section 29 on the substrate 21 'on which the probe 20 is made, as in the near-magnetic field probe 27 having the configuration shown in FIG. 8, the signal from the probe 20 is amplified and A / D converted. , A small signal can be detected. Therefore, the functions of the measurement system as shown in FIGS. 2, 3, and 4 of the first embodiment can be realized only by the near-field probe 27 having a simple configuration, and a system with increased portability and operability can be realized.

The pad portions 24a, 24a of the probe 20
The connection between the amplifiers 4b and 24c and the amplifier unit 29 can be made by a normal cable or the like. The display device 31 can be realized by a normal liquid crystal panel. The switching of each probe can be performed by the switch 30 provided in front of the display device 31. However, it is also possible to provide a configuration in which a switch is provided in front of the amplifier unit 29 for switching. The amplifier unit 29 may be an impedance converter unit, and may be configured to include an AD converter unit in the impedance converter unit. An improvement in the ratio can be realized.

FIG. 9 is a plan view of a near-magnetic field probe according to another embodiment of the present invention. In the present embodiment, similar to the embodiment of FIG. 8, a near-magnetic field probe 20 having a configuration in which three probes similar to those of the second embodiment are stacked on a substrate 21 ′ is manufactured, and then a three-layer probe is formed on the same substrate 21 ′. An amplifier unit 33 to which the output from each coil of one probe is input, and two display devices 35 and 36 for displaying the output from the amplifier unit 33 are provided, and the detection unit (probe) and the measurement unit are integrated. This is an example of the near-magnetic field probe 32.

More specifically, the first probe of the first probe 20 (in this example, the probe having the configuration shown in FIG. 7) formed on the substrate 21 'through the same manufacturing process as in the second embodiment. Pad 24a-1 on one side of pad portion 24a
Is connected to the inner conductor of the coaxial cable 28a, and the pad 24a-2 on the other side of the first pad 24a is connected to the outer conductor of the coaxial cable 28a. And coaxial cable 2
The other end of 8a is connected to the amplifier unit 33. Similarly, pads 24b-1 and 24c-1 on one side of the second and third pad portions 24b and 24c of the second and third probes of the probe 20, respectively.
To the inner conductors of the coaxial cables 28b and 28c, respectively, and connect the coaxial cables 28b and 2c to the pads 24b-2 and 24c-2 on the other side of the second and third pads 24b and 24c.
8c are connected. Then, the other ends of the coaxial cables 28 b and 28 c are connected to the amplifier 33.

The amplifier section 33 includes an amplifier for amplifying the output from the second probe located at the center of the probe 20 having a multilayer structure, and a third probe located at the upper and lower portions of the probe 20. A differential amplifier 34a for obtaining the result of comparing the outputs of the first probe and an amplifier for amplifying the difference are provided, and an AD converter 34b for AD converting the output from each amplifier is also included. ing. A display device (A) 35 for amplifying the output from the second (center) probe and displaying the output obtained by the A / D conversion by the A / D converter 34 b is provided on the substrate 21 ′;
A display device (B) 36 is provided for amplifying the difference between the output of the (lower) probe and the output of the third (upper) probe and displaying the differential output AD-converted by the AD converter 34b. Therefore, while detecting the magnetic field based on the output from the central probe displayed on the display device (A) 35, the positioning can be performed by the differential output of the upper and lower probes displayed on the display device (B) 36. It becomes possible. For example, when measuring noise from the wiring of a printed wiring board (PCB), which is a measurement target, the diameter of the coil of the probe should be about the minimum pitch of the wiring of the PCB or smaller, and the thickness between the probes should be further reduced. Is smaller than the pitch of the PCB wiring, positioning of the PCB wiring pitch level can be easily realized while measuring noise from the PCB wiring.

Each of the pad portions 24a, 24a of the probe 20
The connection between the amplifiers 33 and 4b, 24c can be made by a normal cable or the like. The display device (A) 35 and the display device (B) 36 can be realized by ordinary liquid crystal panels. Further, in the configuration of FIG. 9, since two display devices for measuring the magnetic field and for positioning are provided, the switch shown in FIG. 8 is unnecessary. Further, the amplifier section 33 may be an impedance converter section. The impedance converter section may be configured to include a differential amplifier section and an AD converter section in such an impedance converter section. Thus, an improvement in the S / N ratio can be realized.

(Embodiment 4) An embodiment of claim 4 will be described below. FIG. 10 is a perspective view of a main part of a near-magnetic field probe unit according to a fourth embodiment of the present invention. The near-magnetic field probe unit 37 shown in FIG. 10 is configured such that the near-magnetic field probe 1 having the structure shown in the first embodiment is attached to at least two or more surfaces of a probe support member 38 having a plurality of surfaces. Since the plurality of surfaces of the probe support member 10 are respectively oriented in different directions, each near-field probe 1 attached to at least two surfaces whose normal directions do not coincide with each other.
By detecting the magnetic field by using, the measurement can be performed with high positioning accuracy and the vector can be detected. In the present embodiment, the configuration using the near-magnetic field probe 1 having the configuration shown in the first embodiment is shown. However, the near-field probe having the configuration shown in FIG. 6 or FIG. 8 or 9 may be attached to at least two or more surfaces of the probe support member 38.

(Embodiment 5) Next, an embodiment according to claim 5 will be described. FIG. 11 is a perspective view of a near-magnetic field probe array according to an embodiment of the present invention. The near-field probe array 39 shown in FIG.
In this embodiment, a plurality of near-field probes 20 having the structure shown in FIG. By measuring the magnetic field from the measurement target 42 on the measurement target support substrate 41 with each of the probes 20 arranged and arrayed in this manner, it is possible to measure the magnetic field distribution with high positioning accuracy. Become. In the present embodiment, the configuration using the near-magnetic field probe having the configuration shown in FIG. 7 of the second embodiment is shown, but the near-magnetic field probe having the configuration shown in the first embodiment, or A plurality of near-magnetic field probes having the configuration shown in FIG. 6 of the second embodiment, or near-magnetic field probes having the configuration shown in FIG. 8 or 9 of the third embodiment, or a plurality of near-magnetic field probe units having the configuration shown in the fourth embodiment are provided. It is good also as a structure arranged and arranged by arrangement.

(Embodiment 6) An embodiment of claim 6 will now be described. FIG. 12 is a schematic configuration diagram of a magnetic field measurement system according to a sixth embodiment. In the magnetic field measurement system of the present embodiment, the near magnetic field probe 1 manufactured in the first embodiment is provided on the probe support substrate 43, and the near magnetic field probe 1 is connected to the amplifier unit 44. This is an example of a magnetic field measurement system having a configuration in which a signal output is connected to a spectrum analyzer 45. With the configuration as shown in FIG. 12, even when the magnetic field intensity from the measurement target (not shown) is very small, the signal from the near-field probe 1 is amplified by the amplifier unit 44, thereby achieving high-precision. A system capable of positioning and detecting a minute signal can be provided. In this embodiment, an example using the near magnetic field probe 1 having the configuration shown in the first embodiment has been described.
The amplifier section 44 is connected to the near-magnetic field probe having the configuration shown in FIG. 6 or 7 of the second embodiment, the near-magnetic field probe unit having the configuration shown in the fourth embodiment, or the near-magnetic field probe array having the configuration shown in the fifth embodiment. Alternatively, the configuration may be such that the amplifier section 44 is connected to a spectrum analyzer 45. The amplifier 44 may be an impedance converter, and the S / N ratio can be improved by using the impedance converter. The measuring section is not limited to the spectrum analyzer, but may be another measuring instrument or a display device. Further, the measuring section may be configured to calculate and display by a microcomputer or the like.

(Embodiment 7) An embodiment of claim 7 will now be described. FIG. 13 is a plan view of a near-magnetic field probe according to an embodiment of the present invention. In this embodiment, the second embodiment is formed on the substrate 21 '.
After producing a near-magnetic field probe 20 having a configuration in which three probes similar to those in FIG. 7 are stacked, the pad portions 24a-1,2, 24b-1,2,
24c-1 and 24c-1, 2 are directly connected to an amplifier 47 made of a chip component, and terminals provided on the back surface of the amplifier 47 and each pad are connected by bumps. The amplifier unit 47 includes an AD conversion unit 47a in addition to a normal amplification amplifier.
The DC power supply 51 is connected to the amplifier section 47 via a power supply connection pad 50. Outputs of the three stacked coils of the coil portion 22 of the probe 20 are transmitted to a transmission line portion (first, second, and third transmission lines (parallel lines) are stacked) 23 and a pad portion 2 that follow the output.
Amplifier section 4 via 4a-1,2, 24b-1,2, 24c-1,2
7 and are amplified and AD-converted by the amplifier unit 47 and output. Then, the output of the amplifier section 47 is selectively input to the display device 49 via the changeover switch 48 provided on the same substrate 21 ', and each output is displayed.

With the above configuration, the functions of the measurement system as shown in FIGS. 2, 3 and 4 of the first embodiment can be realized only by the near-field probe 46 having a more compact configuration. In addition, since the signal can be amplified near the signal source (coil unit 22) by the amplifier unit 47, the S / S
The N ratio can be improved, a small signal can be measured, and a probe that can perform high-precision positioning and measurement can be realized. The configuration of the present embodiment is similar to the configuration of the third embodiment. However, since the amplifier 47 made of a chip component is directly connected to the pad of the probe, the amplifier The cost can be reduced as compared with the configuration in which the pad and the pad are connected by a coaxial cable or the like.

The near-magnetic field probe 4 having the structure shown in FIG.
6 can measure the magnetic field by itself.
Similarly to (FIG. 10), the near-magnetic field probe unit of this embodiment can be configured by attaching the near-magnetic field probe 46 of this embodiment to at least two or more surfaces of a support member having a plurality of surfaces. Further, as in the fifth embodiment (FIG. 11), if a plurality of near-magnetic field probes 46 of the present embodiment are arranged on the supporting substrate at regular intervals to form an array, a near-magnetic field probe array can be formed.

Further, in the present embodiment, the configuration using the probe having the configuration shown in FIG.
The near field probe having the configuration shown in the first embodiment or the near field probe having the configuration shown in FIG. 6 of the second embodiment may be provided on 1 ′. Further, the amplifier section 47 may be an impedance converter section, which is configured so as to include each functional part therein, and the S / N ratio can be improved by the impedance converter.

(Eighth Embodiment) An eighth embodiment will now be described. 14 and 15 are explanatory views of a method and a structure of a near-magnetic field probe according to an eighth embodiment of the present invention. The near-magnetic field probe 60 of the present embodiment corresponds to FIGS. 14 (a) and (b). It is manufactured through each process in the order of 15 (a) and (b).
The drawings of each process are shown together with the plan view and the cross-sectional view. FIG. 15B shows a near-field probe 60 of this embodiment.
As shown in FIG. 7, a near-magnetic field probe having the same configuration as that of the second embodiment is manufactured on an Si substrate 61 on which an insulating layer 65 is formed. Before manufacturing the probe, an amplifier 67 is mounted on the Si substrate 61. A probe is formed in advance by a semiconductor process, and a probe is manufactured thereon by a process similar to that of the second embodiment with an insulating layer 65 interposed therebetween.
64b, 64c and the amplifier 67 are connected to the through holes 66a,
It is configured to be connected via 66b and 66c.

As an example of the method of manufacturing the near-field probe of this embodiment, first, an amplifier section 67 is formed on a Si substrate 61 by a known semiconductor process, and then SiO ₂ is formed on the entire surface of the Si substrate 61 by a sputtering method or the like. An insulating layer 65 is formed. And general photolithography technology and CF ₄ +
Through holes 66 a for connecting the first pad section to the amplifier section 67 are formed in the SiO ₂ insulating layer 65 by RIE or the like using H ₂ . Next, as a first conductive thin film for forming a first coil, a first transmission line (parallel line) and a first pad on the SiO ₂ insulating layer 65 of the Si substrate 61, Al is formed by a sputtering method. Is formed. After that, general photolithography technology and H ₃ PO ₄ + H
The first coil 62a and the first transmission line (parallel line) 63a and the first coil 62a made of the first conductive thin film are formed by wet etching using NO ₃ + CH ₃ COOH + H ₂ O.
Is provided to form the first probe 60a. At this time, the first pad portion 64a is connected to the Si substrate 61 through a through hole 66a provided in the insulating layer 65 at the time of fabrication.
It is connected to the upper amplifier section 67 (FIG. 14A).

Next, after forming a SiO ₂ film by a sputtering method, a general photolithography technique and CF ₄ +
The first coil 62a and the first coil 62a are formed by RIE using H ₂ .
A first insulating layer 68 is formed on the transmission line 63a of FIG. 14 (FIG. 14B). In this case, though not shown, through holes for connecting the second pad section to the amplifier section are provided in the first insulating layer 68 and the SiO ₂ insulating layer 65. Next, a second conductive thin film is formed on the first insulating layer 68 with Al in the same manner as in the process of forming the first conductive thin film, and a general photolithography technique is used in the same manner as described above.
By wet etching using H ₃ PO ₄ + HNO ₃ + CH ₃ COOH + H ₂ O, a second coil 62b and a second transmission line (parallel line) 6 made of a second conductive thin film are formed.
3b and a second pad portion 64b are provided to form a second probe 60b. At this time, the second pad portion 64b is connected to the amplifier portion 67 on the Si substrate 61 via a through hole 66b provided in the first insulating layer 68 and the SiO ₂ insulating layer 65 at the time of fabrication. Next, a second insulating layer 69 is formed of SiO ₂ similarly to the first insulating layer 68, and the second coil 62 is formed.
b and the second transmission line (parallel line) 63b (FIG. 15A). Then, the third pad portion is connected to the amplifier portion by the general photolithography technique and RIE using CF ₄ + H ₂ to the second insulating layer 69, the first insulating layer 68, and the SiO ₂ insulating layer 65. Through holes are provided.

Next, a third conductive thin film is formed of Al in the same manner as the first and second conductive thin films, and is formed on the second insulating layer 69. and _lithography, by wet etching using _{H 3 PO 4 + HNO 3 +} CH 3 COOH + H 2 O, the third coil 62c and the third transmission line (parallel lines) composed of a third conductive film 63c and a A third probe 60c is formed by providing three pad portions 64c. At this time, the third pad portion 64
c is connected to the amplifier section 67 on the Si substrate 61 via through holes 66c provided in the second insulating layer 69, the first insulating layer 68, and the SiO ₂ insulating layer 65 at the time of fabrication (FIG. 15).
(B)).

By manufacturing the near-field probe 60 as described above, a near-field probe integrally provided with an amplifier unit in addition to the same functions as in the second embodiment can be realized with a compact configuration. Since the signal can be amplified near the signal source (coil unit 62) by the amplifier unit 67, the S / N ratio can be further improved, a small signal can be measured, and more accurate positioning and measurement can be performed. A possible near-field probe can be realized.

The amplifier 6 formed on the Si substrate 61
7 may be an impedance converter section, in which A
A configuration including a D conversion unit can be adopted, and the S / N ratio can be improved by using an impedance converter.
Further, similarly to the third embodiment, a configuration may be adopted in which a measuring unit such as a display device is provided on the insulating layer 65 in an empty space of the substrate 61 and connected to the amplifier unit 67 through a through hole. Further, as the semiconductor substrate constituting the probe, S
The present invention can be similarly performed on a GaAs substrate or the like in addition to the i substrate.

(Embodiment 9) An embodiment of claim 9 will now be described. FIG. 16 is a plan view of a near-magnetic field probe unit according to a ninth embodiment of the present invention. The near-magnetic field probe unit of the present embodiment is manufactured on a support substrate 70 with the same configuration as that of FIG. A plurality of near-field probes 71, 72, 7
3 and a plurality of near-field probes 71, 7
The size of 2, 73 coil portions 71a, 72a, 73a is changed. With the configuration including the plurality of probes 71, 72, and 73 having different coil dimensions, measurement can be performed with high precision positioning accuracy, and magnetic field measurement can be performed with each coil dimension. Therefore, following the rough magnetic field measurement by the large coil size probe 73 capable of measuring a wide area, the detailed magnetic field measurement can be performed by the smaller coil size probes 71 and 72.

In the embodiment of FIG. 16, there is a portion where the large coil portion 73a overlaps with the small coil portions 71a and 72a, but an insulating layer 74 is interposed in the portion where the coil portions overlap when the probe is manufactured. A short circuit is prevented at a portion where the large and small coil portions overlap. In the embodiment of FIG. 16, an example is shown in which a plurality of near-magnetic field probes 71, 72, and 73 having the same configuration as that of FIG. However, in addition to this, the near-field probe having the configuration shown in FIG. 1 of the first embodiment, the near-field probe having the configuration shown in FIG. 6 of the second embodiment, or the near-field probe having the configuration shown in FIG. A near-magnetic field probe unit having a configuration in which a plurality of coils are provided on a supporting substrate with different dimensions may be provided.
Further, the dimensions of each probe of the near-magnetic field probe unit having the configuration shown in the fourth embodiment are made different, or the near-magnetic field probe units having the configuration shown in the fourth embodiment are provided on the support substrate to make the coil size different. And the like are also possible. Furthermore, in the near-magnetic field probe array shown in the fifth embodiment, a configuration in which two or more types of probes having different coil dimensions are arranged to form an array is also possible.

(Embodiment 10) An embodiment of the present invention will now be described. FIG. 17 is a schematic configuration diagram of a magnetic field measurement system according to an embodiment of the present invention. In the magnetic field measurement system of the present embodiment, the near magnetic field probe 1 manufactured in the first embodiment is set on an XYZ stage 76 that moves three-dimensionally, and the signal output obtained by the coil unit 2 of the near magnetic field probe 1 is switched. This is a system connected to a measurement unit such as an oscilloscope 10 via a switch 9. In this way, the near-field probe 1 is placed on the XYZ stage 76, and three-dimensionally (including one-dimensionally and two-dimensionally) at a target position of the object to be measured (for example, the wiring portion 8b of the printed wiring board (PCB) 8). The magnetic field measurement can be performed with high accuracy by moving the probe 1 in step (1), and the positioning can be performed with high accuracy at that time.

In the above embodiment, the measuring section is not limited to an oscilloscope, but may be a spectrum analyzer, another measuring device, or a display device. XYZ stage 7
6 shows an example in which the near-magnetic field probe manufactured in Example 1 was installed, but Examples 2 and 3 were mounted on an XYZ stage 76.
A magnetic field measurement system having a configuration in which a near magnetic field probe having any of the configurations shown in any one of claims 7 and 8 is provided, a magnetic field measurement system having a configuration in which a near magnetic field probe unit having the configuration shown in the fourth or ninth embodiment is provided, or a fifth embodiment. A magnetic field measurement system or the like having a configuration in which the near magnetic field probe array having the above configuration is installed can also be used.

[0053]

As described above, the near-field probe according to the first aspect of the present invention has a structure in which loop coils formed of planes are stacked at substantially the same position with an insulator interposed therebetween, so that the near-field probe is close to the object to be measured. At this time, since the positioning can be performed by comparing the outputs of the plurality of stacked coils, highly accurate positioning can be performed with a simple structure, and highly accurate measurement can be performed.

In the near-field probe according to the second aspect, the loop coil is formed of a conductive thin film, and the thin-film coil is laminated at substantially the same position with an insulating thin film interposed therebetween. At this time, the outputs of a plurality of stacked coils can be compared for positioning. In addition, since the coil and the insulating layer to be laminated are composed of thin films, a thin coil can be formed with a small size, and the insulating layer can also be formed thin, so that the coils can be laminated at narrower intervals and positioning with high resolution can be achieved. It can be carried out. Therefore,
Highly accurate positioning can be performed with a simple structure, and highly accurate measurement can be performed.

According to a third aspect of the present invention, in addition to the configuration of the first or second aspect, in addition to the configuration of the first or second aspect, each of the transmission path following the coil section on the substrate on which the coil is laminated and each of the coil sections via the transmission path is provided. An amplifier or impedance converter to which an output is input and a display for displaying the output of the amplifier or impedance converter are provided, so that the magnetic field measurement function can be performed only with a probe having a simple configuration. Can be realized. Therefore, a simple measurement system with increased portability and operability can be realized.

According to a fourth aspect of the present invention, there is provided a near-magnetic field probe unit having a structure in which the near-field probe according to the first, second or third aspect is attached to at least two or more surfaces of a support member having a plurality of surfaces. Since detection can be performed with two or more probes facing different directions, measurement can be performed with high positioning accuracy, and vector detection of a magnetic field can be performed.

A near-field probe array according to claim 5 is
A plurality of near-magnetic field probes according to claim 1, 2 or 3 or a plurality of near-magnetic field probe units according to claim 4 are provided on a support member and are arranged in an array, so that measurement is performed with a plurality of arranged probes or each probe unit. Therefore, the measurement can be performed with high positioning accuracy, and the magnetic field distribution can be measured.

According to a sixth aspect of the present invention, there is provided a magnetic field measuring system comprising: a near field probe according to the first or second aspect, a near field probe unit according to the fourth aspect, or a near field probe array according to the fifth aspect; By connecting the sections and connecting the amplifier section or the impedance converter section to the measurement section, a system that can perform positioning with high accuracy and detect minute signals can be realized. be able to.

A near-field probe according to a seventh aspect of the present invention is the near-field probe according to the third aspect or the near-field probe in the magnetic field measurement system according to the sixth aspect, wherein a coil portion is provided on a substrate on which the probe is formed via a transmission path. Is connected to the pad, and an amplifier or an impedance converter composed of chip components is connected to the pad, so that the amplifier or the impedance converter amplifies the signal in the vicinity of a signal source (coil). And so on, the S / N ratio can be improved, and a small signal can be measured. Therefore, a highly accurate near-field probe can be realized.

The near-field probe according to claim 8 is the near-field probe according to claim 3 or the near-field probe in the magnetic field measurement system according to claim 6, wherein a coil portion, a transmission path, and an amplifier are provided on a substrate on which the probe is manufactured. The high-precision near-magnetic field probe can be realized in a compact configuration by providing the unit or the impedance converter in a semiconductor process, and the amplifier or the impedance converter can be used in the vicinity of the signal source (coil). Since signal processing such as amplification can be performed, the S / N ratio can be improved, and a minute signal can be measured. Therefore, a more accurate near-field probe can be realized.

According to a ninth aspect of the present invention, there is provided a near-magnetic field probe unit according to any one of the first, second, third, seventh and eighth aspects or a plurality of near-field probe units according to the fourth aspect on a support member. By providing a plurality of near-magnetic field probes or near-magnetic field probe units with different coil sizes, measurement can be performed with high precision positioning accuracy, and each coil size High-precision measurement can be performed following a rough magnetic field measurement with a large coil size probe that can measure a wide area, followed by a smaller coil size probe. be able to.

According to a tenth aspect of the present invention, there is provided a near-magnetic field probe according to any one of the first, second, third, seventh and eighth aspects, a near-magnetic field probe unit according to the fourth or tenth aspect, or a fifth aspect. Near-field probe array, means for moving these near-field probes or near-field probe units or near-field probe arrays in three dimensions, and detecting signals obtained by near-field probes or near-field probe units or near-field probe arrays Of the target position
By moving and measuring the probe or the like in one dimension (or one dimension or two dimensions), it is possible to measure the magnetic field distribution with high accuracy, and to perform positioning with high accuracy at that time. Therefore, it is possible to realize a magnetic field measurement system capable of performing a magnetic field distribution measurement with high positioning accuracy and high accuracy.

As described above, according to the near-magnetic field probe of the present invention, the probe unit and the probe array including the near-field probe, and the near-magnetic field probe, the probe unit, and the magnetic field measuring system including the probe array, the present invention is simplified. Positioning is possible with a simple structure, and a near magnetic field can be measured with high accuracy. In addition, vector detection of a magnetic field and detection of a small signal are possible, measurement with a plurality of coil dimensions is possible, and three-dimensional measurement of a magnetic field distribution is also possible. Therefore, by using the near-magnetic field probe, the probe unit, the probe array, and the magnetic field measurement system of the present invention, useful information for EMC measures of a product or a printed wiring board (PCB) can be obtained with higher accuracy. Can be made easier and the product development period can be shortened arbitrarily.

[Brief description of the drawings]

FIG. 1 is a view showing one embodiment of claim 1, and is an explanatory view of a configuration and a manufacturing method of a near-magnetic field probe.

FIG. 2 is a diagram showing an example of using the near-magnetic field probe according to claim 1, wherein FIG. 2 (a) is a measurement system in which a near-magnetic field probe is used to measure a magnetic field using a wiring or the like of a printed circuit board as a measurement target; FIG. 1B is a diagram showing a schematic configuration example of FIG. 1, and FIG. 2B is a diagram of the near-field probe and the printed wiring board of FIG.

FIG. 3 is a view showing another example of use of the near-magnetic field probe according to claim 1, and is an outline of a measurement system in a case where a near-field probe is used to measure a magnetic field with a wiring or the like of a printed circuit board as a measurement target. It is a figure showing the example of composition.

FIG. 4 is a diagram showing still another example of use of the near-magnetic field probe according to claim 1, wherein the near-magnetic field probe is used to measure a magnetic field using a printed circuit board wiring or the like as a measurement target; FIG. 3 is a diagram illustrating a schematic configuration example.

FIG. 5 is a view showing one embodiment of claim 2, and is an explanatory view of a configuration and a manufacturing method of a near-magnetic field probe.

6 is a view showing one embodiment of claim 2, and is a plan view of a near-magnetic field probe manufactured through the manufacturing process shown in FIG. 5. FIG.

FIG. 7 is a plan view of a near-magnetic field probe according to another embodiment of the present invention.

FIG. 8 is a plan view of a near-magnetic field probe according to an embodiment of the present invention.

FIG. 9 is a plan view of a near-magnetic field probe according to another embodiment of the present invention.

FIG. 10 is a perspective view of an essential part of a near-magnetic field probe unit according to an embodiment of the present invention.

FIG. 11 is a perspective view of a near-magnetic field probe array according to an embodiment of the present invention.

FIG. 12 is a schematic configuration diagram of a magnetic field measurement system according to a sixth embodiment.

FIG. 13 is a plan view of a near-magnetic field probe according to an embodiment of the present invention.

FIG. 14 is a view showing an embodiment of claim 8, and is an explanatory view of a configuration and a manufacturing method of a near-magnetic field probe.

FIG. 15 is a view showing an embodiment of claim 8, and is an explanatory view of a configuration and a manufacturing method of a near-magnetic field probe.

FIG. 16 is a plan view of a near-magnetic field probe unit according to a ninth embodiment;

FIG. 17 is a schematic configuration diagram of a magnetic field measurement system according to an embodiment of the present invention.

[Explanation of symbols]

1: Near magnetic field probe 2: Coil part 3: Parallel line part 4: Connection pad part 5: Conductive foil 6: Insulating sheet 7: Adhesive part 8: Printed wiring board (PCB) 8a: LSI 8b: Wiring on PCB 9: changeover switch 10: oscilloscope (measuring unit) 11: spacer 12: printed wiring board (PCB) having a curved surface 12b: wiring on a PCB having a curved surface 20: near-field probe 20a, 20b, 20c: first and second , Third probe 21: probe manufacturing substrate 21 ′: probe manufacturing substrate 22: coil portions 22a, 22b, 22c: first, second, and third coils 23: transmission line (parallel line) portion 23a , 23b, 23c: first, second, and third transmission lines (parallel lines) 24: pad portions 24a, 24b, 24c: first, second, and third pad portions 25a, 25b First and second insulating layers 26: through-hole 27: near-field probe 28a, 28b, 28c: coaxial cable 29: amplifier (or impedance converter) 29a: AD converter 30: switch 31: display device 32 : Near field probe 33: Amplifier section (or impedance converter section) 34 a: Differential amplifier section 34 b: AD conversion section 35: Display device (A) 36: Display device (B) 37: Near field probe unit 38: Support member 39: Near magnetic field probe array 40: Probe support substrate 41: Measurement target support substrate 42: Measurement target 43: Probe support substrate 44: Amplifier unit (or impedance converter unit) 45: Spectrum analyzer (measurement unit) 46: Near magnetic field probe 47: Chip of amplifier section (or impedance converter section) Changeover switch 49: Display device 50: Power supply connection pad 51: DC power supply 60: Near magnetic field probe 60a, 60b, 60c: First, second, and third probe 61: Si substrate 62: Coil portion 62a, 62b, 62c : First, second, and third coils 63: transmission line (parallel line) portions 63a, 63b, 63c: first, second, and third transmission lines (parallel line) 64a, 64b, 64c: first, first Second and third pad portions 65: SiO ₂ insulating layers 66a, 66b, 66c: through holes 67: amplifier portion (or impedance converter portion) formed on a Si substrate 68: first insulating layer 69: second Insulating layer 70: Support substrate 71, 72: Near magnetic field probe with small coil size 73: Near magnetic field probe with large coil size 74: Insulating layer 75: Near magnetic field probe unit 76: XY Z stage

Claims (10)

[Claims] 1. A near-magnetic field probe having a loop coil formed of a plane as a detecting unit, wherein the loop coils are laminated at substantially the same position via an insulator. 2. A near-magnetic field probe having a loop coil formed as a plane as a detecting unit, wherein the loop coil is formed of a conductive thin film, and the thin film coil is laminated at substantially the same position via an insulating thin film. Characteristic near-field probe. 3. The near-magnetic field probe according to claim 1, wherein a transmission path following the coil section on the substrate on which the coil is laminated, and an amplifier section to which each output of the coil section is input via the transmission path. Alternatively, a near-magnetic field probe provided with an impedance converter section and a display section for displaying an output of the amplifier section or the impedance converter section. 4. A support member having at least two surfaces having a plurality of surfaces.
A near-magnetic field probe unit comprising a structure in which the near-magnetic field probe according to claim 1, 2 or 3 is attached to at least one surface. 5. A near-magnetic field probe array, wherein a plurality of near-magnetic field probes according to claim 1, 2 or 3, or a plurality of near-magnetic field probe units according to claim 4 are provided on a support member. 6. An amplifier unit or an impedance converter unit is connected to the near-magnetic field probe according to claim 1 or 2, the near-magnetic field probe unit according to claim 4, or the near-field probe array according to claim 5, and the amplifier unit. Alternatively, a magnetic field measurement system, wherein an impedance converter is connected to the measurement unit. 7. A near-magnetic field probe according to claim 3, or a near-magnetic field probe in the magnetic field measurement system according to claim 6, wherein a pad connected to the coil unit via a transmission line is provided on a substrate on which the probe is manufactured. A near-magnetic field probe, wherein an amplifier unit or an impedance converter unit composed of a chip component is connected to the pad. 8. A near-magnetic field probe according to claim 3, or a near-magnetic field probe in the magnetic field measurement system according to claim 6, wherein a coil unit, a transmission line, an amplifier unit or an impedance converter unit is provided on a substrate on which the probe is manufactured. A near-magnetic field probe provided by a semiconductor process. 9. A plurality of near magnetic field probes according to claim 1, or a plurality of near magnetic field probe units according to claim 4, which are provided on a support member. A near-field probe unit characterized by changing the size of a coil of the near-field probe or the near-field probe unit. 10. A near-field probe according to any one of claims 1, 2, 3, 7, and 8, a near-field probe unit according to claim 4 or 10, and a near-field probe array according to claim 5, and A means for moving the near-field probe, the near-field probe unit or the near-field probe array in three dimensions, and a measuring unit for detecting a signal obtained by the near-field probe or the near-field probe unit or the near-field probe array A magnetic field measurement system characterized by the following.