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また、前記ターゲットは、チタニア粉末若しくはこれとチタン粉末の混合物を原材料とし、高圧圧縮法、焼結法若しくは熔射法により製造したものであることを特徴とする。 また、前記酸化物層は、スパッタガスとして、０．１〜１０体積％の酸化性ガスを含む不活性ガスを用いてスパッタ法により成膜することを特徴とする。[0012] The target is characterized in that it is manufactured by high-pressure compression, sintering or spraying using titania powder or a mixture of titania powder and titanium powder as a raw material. The oxide layer is formed by sputtering using an inert gas containing 0.1 to 10% by volume of an oxidizing gas as a sputtering gas.
Claims (5)
透明基体上に、少なくとも、低放射率金属層及び屈折率が２．０以上の酸化物層を形成してなる低放射率積層体の製造方法であって、前記低放射率金属層を成膜した後、直接、前記酸化物層を、該酸化物の還元性のターゲットを用いて直流スパッタ法により成膜することを特徴とする低放射率積層体の製造方法。A method for manufacturing a low-emissivity laminate comprising forming at least a low-emissivity metal layer and an oxide layer having a refractive index of 2.0 or more on a transparent substrate, the method comprising: forming the low-emissivity metal layer; and then directly forming the oxide layer by a DC sputtering method using a reducing target of the oxide.前記酸化物は、二酸化チタン、五酸化ニオブ、五酸化タンタル、三酸化タングステン、三酸化モリブデン、もしくは、これらを２つ以上含む酸化物であることを特徴とする請求項１に記載の低放射率積層体の製造方法。2. The method for manufacturing a low-emissivity laminate according to claim 1, wherein the oxide is titanium dioxide, niobium pentoxide, tantalum pentoxide, tungsten trioxide, molybdenum trioxide, or an oxide containing two or more of these.前記ターゲットは、チタニア粉末若しくはこれとチタン粉末の混合物を原材料とし、高圧圧縮法、焼結法若しくは熔射法により製造したものであることを特徴とする請求項１又は２に記載の低放射率積層体の製造方法。3. The method for manufacturing a low-emissivity laminate according to claim 1, wherein the target is manufactured using titania powder or a mixture of titania powder and titanium powder as raw materials by high-pressure compression, sintering, or spraying.前記低放射率金属は、銀、銅若しくは金又はこれらを主成分とする合金であることを特徴とする請求項１〜３のいずれか１項に記載の低放射率積層体の製造方法。4. The method for manufacturing a low-emissivity laminate according to claim 1, wherein the low-emissivity metal is silver, copper, or gold, or an alloy containing any of these as a main component.前記酸化物層は、スパッタガスとして、０．１〜１０体積％の酸化性ガスを含む不活性ガスを用いてスパッタ法により成膜することを特徴とする請求項１〜４のいずれか１項に記載の低放射率積層体の製造方法。5. The method for manufacturing a low-emissivity laminate according to claim 1, wherein the oxide layer is formed by a sputtering method using an inert gas containing 0.1 to 10 volume % of an oxidizing gas as a sputtering gas.
Wafer made from transparent material and method for its production a repeated low-e-layer is coated on a wafer which is made from transparent material or on a foil with high transmission characteristics in a visible region.
High purity zirconium or hafnium, sputtering target comprising the high purity zirconium or hafnium and thin film formed using the target, and method for producing high purity zirconium or hafnium and method for producing powder of high purity zirconium or hafnium
Surface-treated ultrafine metal powder, method for producing the same, conductive metal paste of the same, and multilayer ceramic capacitor using said paste