JPH11111882A - Wiring board for BGA type semiconductor device and BGA type semiconductor device - Google Patents

Abstract

[PROBLEMS] To provide a wiring board for a BGA type semiconductor device and a BGA type semiconductor device which can mount a multi-pin LSI, can achieve a reduction in thickness, and have excellent solder ball connection reliability. In this BGA type semiconductor device, a semiconductor element (3) is connected to a wiring layer (20b) of a flexible multilayer wiring board (20) by a flip method, and a plurality of solder balls (6) are connected in an array.
The stiffener 4 is bonded to the surface opposite to the surface to which the semiconductor element 3 of No. 0 is connected with the adhesive 2. Since the flexible multilayer wiring board 20 is used, a multi-pin LSI
Can be mounted, and the thickness can be reduced. Since the flatness of the flexible multilayer wiring board 20 is ensured by the stiffeners 4, the connection reliability of the solder balls 6 is excellent.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD The present invention relates to a BGA (Ball Gri
The present invention relates to a BGA type semiconductor device wiring board and a BGA type semiconductor device applied to a (d Array) type semiconductor device, and more particularly to a BGA type semiconductor device wiring substrate using a flexible multilayer wiring board and a BGA type semiconductor device.

[0002]

2. Description of the Related Art In recent years, in semiconductor devices, as the number of inputs and outputs of semiconductor elements such as ICs and LSIs has increased, the input / output terminals have been arranged on a flat surface, so that the miniaturized structure has been relaxed.
The demand for GA structures is increasing. On the other hand, there is an increasing demand for a reduction in the price of electronic-related components, and BGA-type semiconductor devices are seeking a structure that meets this demand. Under such circumstances, TAB (Ta
tape-BG using pe Automated Bonding tape
2. Description of the Related Art A semiconductor device having an A structure has attracted attention as a device capable of realizing a multi-pin, small package at low cost.

FIG. 4 shows the tape-BGA type semiconductor device. The semiconductor device has a device hole 1a, and a heat-resistant insulating tape 10 such as polyimide.
The TAB tape 1 is formed of a wiring layer 11 including an inner lead 11a and an outer lead 11b formed on one surface, and a ground layer (not shown) formed on the other surface, and is accommodated in the device hole 1a. , Wiring layer 11
A semiconductor element 3 having an electrode 3a connected to an inner lead 11a thereof; and a stiffener 4 attached to the surface of the TAB tape 1 opposite to the surface on which the wiring layer 11 is formed and the upper surface of the semiconductor element 3 with an adhesive 2. , Outer lead 11
A solder resist 5 for forming a solder ball connection opening pattern on the side b, an array of solder balls 6 connected to the outer leads 11 b through the solder ball connection opening pattern of the solder resist 5, and a seal for protecting the semiconductor element 3. And a stop resin 7.

[0004] However, according to the conventional BGA type semiconductor device shown in FIG.
Although fine processing of 0 μm can be performed relatively easily, it is difficult to cope with multi-layered conductors. Considering the current mass production level, it can be said that two layers of double-sided wiring are the best. For this reason, when higher electrical characteristics are required, multilayer wiring is advantageous in electrical characteristics. Therefore, a mounting component for mounting a multi-pin high-speed LSI is not a tape-BGA structure in which multilayering is difficult, but a flip-chip. A build-up multilayer wiring board in which the semiconductor element 3 is mounted and wired in a system is considered to be effective.

FIG. 5 shows a conventional BGA type semiconductor device using the flip-type build-up multilayer wiring board. The semiconductor device includes a build-up multilayer wiring board 8 including a plurality of wiring layers including a lowermost wiring layer 8a formed on a lower surface and an uppermost wiring layer 8b formed on an upper surface, The semiconductor element 3 is connected to the uppermost wiring layer 8b of the multi-layer wiring board 8 by a flip chip bonding portion 9a.
Resist 5 that forms an opening pattern for solder ball connection on the surface of the build-up multilayer wiring board 8 on which the lowermost wiring layer 8a is formed, and an opening for solder ball connection of the solder resist 5. And an array of solder balls 6 connected to the lowermost wiring layer 8a through the pattern.

[0006]

However, according to the conventional BGA type semiconductor device using the build-up multilayer wiring board 8, the build-up multilayer wiring board 8 is made of glass fiber (F).
Since it is based on R-4), it is not suitable for thinning and thinning, and because of its poor thermal conductivity, it is not possible to mount a high-heat-generating element. Since the constituent materials such as epoxy / glass are detached from the cross section of the above and frequently fall on the circuit, there has been a problem that reliability is poor.

Accordingly, an object of the present invention is to provide a wiring board for a BGA type semiconductor device and a BGA type semiconductor device which can be mounted with a multi-pin LSI, can be reduced in thickness, and have excellent solder ball connection reliability. .

[0008]

SUMMARY OF THE INVENTION In order to achieve the above object, the present invention provides a semiconductor device which is supported by an outer frame having a plurality of positioning pilot holes and which is mounted on a semiconductor device mounting area on a first surface by a flip method. And a flexible multilayer wiring board in which a plurality of solder balls are connected in an array to the external circuit connection area on the first surface;
There is provided a wiring board for a BGA type semiconductor device, comprising a reinforcing plate bonded to a second surface of the flexible multilayer wiring board opposite to the first surface with an adhesive.

According to another aspect of the present invention, there is provided a flexible multilayer wiring board having a semiconductor element mounting area and an external circuit connection area on a first surface, and a flexible multilayer wiring board having a first surface. A semiconductor element connected to the semiconductor element mounting area by a flip method; a plurality of solder balls connected in an array to the external circuit connection area on the first surface of the flexible multilayer wiring board; A BGA type semiconductor device comprising a reinforcing plate bonded to a second surface of the plate opposite to the first surface with an adhesive.

[0010]

FIG. 1 shows a BGA type semiconductor device according to a first embodiment of the present invention. This semiconductor device includes a plurality of wiring layers including a wiring layer 20b formed on one surface, and has a rectangular element mounting portion 20a having a depth of 4 mm for accommodating the semiconductor element 3 formed therein. Flexible multilayer wiring board 2 having flexible multilayer wiring board 20
0, a rectangular stiffener 4 attached to the other surface by an adhesive 2, a solder resist 5 for forming a solder ball connection opening pattern on the surface of the flexible multilayer wiring board 20 on which the wiring layer 20b is formed, The wiring layer 20 is passed through the solder ball connection opening pattern of the solder resist 5.
b, and an underfill 9 for joining the semiconductor element 3 to the element mounting part 20a of the flexible multilayer wiring board 20 by the flip chip joining part 9a.

The adhesive 2 is made of a thermosetting adhesive having a thickness of 0.05 mm, and has an elastic modulus of 10 MPa at −50 ° C. or lower and 1 MPa at 110 ° C. or higher. By setting the elastic modulus to such a value, the distortion of the flexible multilayer wiring board 20 due to heat from the semiconductor element 3 can be absorbed.

The stiffener 4 is made of a copper material having a thickness of 0.4 mm, and its surface is plated with Ni having a thickness of 0.1 μm.

The flexible multi-layer wiring board 20 is composed of four layers of pinpolyimide and has 600 pins.

FIGS. 2A and 2B show one manufacturing method of the first embodiment. A plurality of laminates composed of the stiffener 4 and the flexible multilayer wiring board 20 attached by the adhesive 2 are connected to a frame outer frame 21 having a plurality of positioning pilot holes 21a along a peripheral longitudinal direction by a connection bar 22. Link. Thereafter, an opening pattern for solder ball connection is formed by the solder resist 5,
The plurality of solder balls 6 are connected to the wiring layer 20 b through the solder ball connection opening pattern, and the semiconductor element 3 is bonded to the element mounting part 20 a of the flexible multilayer wiring board 20 by the Philip chip bonding part 9 a of the underfill 9. . Thereafter, the BGA type semiconductor device shown in FIG. 1 is obtained by being separated from the connection bar 22 of the frame outer frame 21 individually.

According to the first embodiment, the following effects can be obtained. (A) Since the flexible multilayer wiring board 20 is used, a multi-pin LSI can be mounted. (B) Since the flexible multilayer wiring board 20 is used, and the element mounting portion 20a is formed in a concave shape, the thickness can be further reduced. (C) Since the stiffener 4 bonded to the flexible multilayer wiring board 20 is made of metal, heat generated by the semiconductor element 3 is radiated from the stiffener 4 via the flexible multilayer wiring board 20 and the adhesive 2, so that heat dissipation is improved. Will be higher. Further, by selecting a high thermal conductive material for the resin of the underfill 9, the heat radiation is further improved. (D) Flexible multilayer wiring board 20 by stiffener 4
Therefore, the connection reliability of the solder ball 6 is excellent. (E) By forming the flexible multilayer wiring board 20 and the like into a frame, a plurality of packages can be mounted on a mass production line, and a great advantage in cost can be obtained.

FIG. 3 shows a BGA type semiconductor device according to a second embodiment of the present invention. This semiconductor device is such that the underfill 9 of the first embodiment flows into the vicinity of the back surface of the semiconductor element 3, and the other configuration is the same as that of the first embodiment. By extending the underfill 9 to the vicinity of the back surface of the semiconductor element 3, the protection of the semiconductor element 3 can be enhanced.

The present invention is not limited to the above embodiment, and various embodiments are possible. For example, the present invention can be applied to a CSP (Chip Size Package) type semiconductor device.

[0018]

As described above, according to the wiring board for a BGA type semiconductor device and the BGA type semiconductor device of the present invention, since a multi-layer flexible wiring board is used, a multi-pin LSI can be mounted, and the thickness is reduced. Can be achieved. In addition, since the flatness of the multilayer flexible wiring board is ensured by the reinforcing plate, the connection reliability of the solder balls is excellent.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of a BGA type semiconductor device according to a first embodiment of the present invention.

FIG. 2 (a) is a BGA according to the first embodiment of the present invention.
FIG. 4B is a plan view showing one method of manufacturing the semiconductor device, and FIG. 4B is a cross-sectional view taken along the line AA of FIG.

FIG. 3 shows a BG according to a second embodiment of the present invention.
FIG. 2 is a configuration diagram of an A-type semiconductor device.

FIG. 4 is a configuration diagram of a conventional tape-BGA type semiconductor device.

FIG. 5 is a configuration diagram of a conventional BGA type semiconductor device using a flip-up build-up multilayer wiring board.

[Explanation of symbols]

 Reference Signs List 2 adhesive 3 semiconductor element 4 stiffener 5 solder resist 6 solder ball 9 underfill 9a flip chip bonding section 20 flexible multilayer wiring board 20a element mounting section 20a wiring layer 21 frame outer frame 21a pilot hole 22 connection bar

Claims (6)

[Claims] 1. A semiconductor device is supported by an outer frame having a plurality of pilot holes for positioning, a semiconductor element is connected to a semiconductor element mounting area on a first surface by a flip method, and an external circuit connection on the first surface is provided. A flexible multilayer wiring board in which a plurality of solder balls are connected in an array in a region; and a reinforcing plate bonded by an adhesive to a second surface of the flexible multilayer wiring board opposite to the first surface. A wiring board for a BGA type semiconductor device, characterized in that: 2. The wiring board for a BGA type semiconductor device according to claim 1, wherein the first surface of the flexible multilayer wiring board has a recess formed in the semiconductor element mounting area. 3. The adhesive according to claim 1, wherein said adhesive is 0.1 to 5 at -50.degree.
2. The wiring board for a BGA type semiconductor device according to claim 1, wherein the wiring board has a modulus of elasticity of 000 MPa, 110 ° C. or more and 100 MPa or less and a thickness of 0.01 to 0.15 mm. 4. A flexible multilayer wiring board having a semiconductor element mounting area and an external circuit connection area on a first surface, and connected to the semiconductor element mounting area on the first surface of the flexible multilayer wiring board by a flip method. Semiconductor elements, a plurality of solder balls connected in an array to the external circuit connection area on the first surface of the flexible multilayer wiring board, and a plurality of solder balls connected to the external surface on the opposite side of the flexible multilayer wiring board from the first surface. A BGA type semiconductor device comprising: a reinforcing plate bonded to a second surface with an adhesive. 5. The BGA type semiconductor device according to claim 4, wherein said first surface of said flexible multilayer wiring board has a recess formed in said semiconductor element mounting area. 6. The adhesive according to claim 1, wherein said adhesive is 0.1 to 5 at -50.degree.
The BGA type semiconductor device according to claim 4, wherein the BGA type semiconductor device has a modulus of elasticity of 000 MPa, 110 ° C. or more and 100 MPa or less and a thickness of 0.01 to 0.15 mm.