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JPH0352673A - Method for applying photoresist - Google Patents

Method for applying photoresist

Info

Publication number
JPH0352673A
JPH0352673A JP18538589A JP18538589A JPH0352673A JP H0352673 A JPH0352673 A JP H0352673A JP 18538589 A JP18538589 A JP 18538589A JP 18538589 A JP18538589 A JP 18538589A JP H0352673 A JPH0352673 A JP H0352673A
Authority
JP
Japan
Prior art keywords
photoresist
rotation
stage
substrate
rotation speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18538589A
Other languages
Japanese (ja)
Inventor
Shinichi Kamisuke
真一 紙透
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP18538589A priority Critical patent/JPH0352673A/en
Publication of JPH0352673A publication Critical patent/JPH0352673A/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 [産業上の利用分野コ 本究明は光メモリ製造に使用されるスタンパ、LSI、
液晶表示体などその製造工程において使用するフォトレ
ジストの基板上への塗布方法に関する. [従来の技術] 従来、フォトレジストの回転塗布は、回転段を2段とし
、第一段において基板上にフォトレジストを滴下し、第
二段において数千rp.mで回転し基板上にフォトレジ
スト膜を形成するものであった. [発明が解決しようとする課題] しかし、前述の従来技術では、大面積の円形基板や角基
板にフォトレジストを塗布する場合に以下に述べるよう
な問題点が生じていた.大面積の基板は必然的に重くな
るため、数千rpmの領域で精度良く回転させるために
は、塗布装置のモーターなど回転にかかわる部分の性能
や精度を向上させなければならず、これはコストアップ
につながり、また、基板がガラスで出来ている場合は、
基板自体が数千rpmでの遠心力に耐えられず?i12
壊される場合があった.さらには、数千rpmの回転で
振り切られたフォトレジストが塗布装置の内壁に衝突し
、一部が跳ね返り基板上に再付着し欠陥となっていた.
そこで本発明はこのような課題を解決するものでその目
的とするところは種々の製品の製造工程におけるフォト
レジスト塗布工程の品質と歩留まりを向上させるところ
にある. [課題を解決するための手段コ 本発明のフォトレジストの塗布方法は、基板上にフォト
レジストを回転塗布する工程において、一定回転数を一
定時間保持する回転段を2段以上有し、第一回転段にお
いてフォトレジスト液を基板上に滴下し、第二回転段に
おいて回転数を約19 0 r pm、保持時間を6秒
以上とすることを特徴とする. [実施例] 以下に本允明について実施例に基づき説明する。
[Detailed Description of the Invention] [Industrial Application Fields] This research focuses on stampers, LSIs,
This paper relates to a method for coating photoresists on substrates used in the manufacturing process of liquid crystal displays and other devices. [Prior Art] Conventionally, in the spin coating of photoresist, there are two rotation stages, the photoresist is dropped onto the substrate in the first stage, and several thousand rpm is applied in the second stage. The photoresist film was formed on the substrate by rotating at m.m. [Problems to be Solved by the Invention] However, the above-mentioned conventional techniques have the following problems when applying photoresist to large-area circular or square substrates. Large-area substrates are inevitably heavy, so in order to accurately rotate them at several thousand rpm, it is necessary to improve the performance and accuracy of parts involved in rotation, such as the motor of the coating device, which increases cost. Also, if the board is made of glass,
Is the board itself unable to withstand centrifugal force at several thousand rpm? i12
There were cases where it was destroyed. Furthermore, the photoresist that had been shaken off by the rotation at several thousand rpm collided with the inner wall of the coating device, and a portion of it bounced back and reattached to the substrate, causing defects.
The present invention is intended to solve these problems, and its purpose is to improve the quality and yield of the photoresist coating process in the manufacturing process of various products. [Means for Solving the Problems] The photoresist coating method of the present invention includes two or more rotation stages for maintaining a constant rotation speed for a certain period of time in the process of coating the photoresist on a substrate by rotation, and the first The photoresist solution is dropped onto the substrate in the rotation stage, and in the second rotation stage, the rotation speed is approximately 190 rpm, and the holding time is 6 seconds or more. [Example] Masaaki Moto will be described below based on an example.

ここでは光メモリ製造に使ルされるスタンパの製造工程
の場合について詳細に述べる.該製造工程では厚みが数
mmのガラス基板上にフォトレジストを塗布し、該フォ
トレジスト膜に光メモリに必要となる信号に対応して変
調を施されたレーザビームにより露光し、現像後得られ
たフォトレジストパターン上にニッケルi!鋳膜を付着
し、該電鋳膜を整形することによりスタンパを製造する
。従ってスタンバ上に形成されるパターンの高さはフォ
トレジスト厚みと基本的に同一であり、フォトレジスト
厚みがそのまま信号品質に影響するので,面内および基
板間で均一なレジスト膜厚が要求される. 厚み6mm、直径200mmのガラス基板を洗浄、乾燥
後、回転塗布装置によりフォトレジストを塗布した.目
標とするフオトレジスl・厚みは約1000人であり、
塗布回転数としては100orpm以下の領域とするた
めフォトレジスト液の粘度に関しては予備実験を行い、
2.5及び4.5cPとした.塗布条件としては第2図
に示すような回転パターンにより、回転段の数、回転数
、保持時間および次の回転段の回転数に達するのに要す
る時間の4要因について種々の水準につき実験を行った
結果、各要因間に交互作用が認められたものの、基板内
でのフォトレジスト厚みの分布に最も影響を及ぼす要因
は、第二回転段の回転数であることがわかった.即ち第
3図に示すように基板内のフォトレジスト厚みの分布は
第二回転段の回転数と深い相関関係があり、また、第4
図に示すように第二回転段の保持時間もまたフォトレジ
スト厚み分布と相関関係にある.第3図および第4図の
結果及びこれ以外の要因はフォトレジスト厚みの分布に
対する影響が小さいという結果から基板内でのフォトレ
ジスト厚みの分布を最も均一にする塗布条件は第二回転
段の回転数を約l90rpm、保持時間な゛6秒以上と
することである.また第一回転段及び第三回転段の回転
数はフォトレジスト厚みに影響するため該回転数により
フォトレジスト厚みの調節が出来る.第三段回転数とフ
ォトレジスト厚みの関係の1例を第5図に示す。
Here, we will discuss in detail the manufacturing process of stampers used in optical memory manufacturing. In this manufacturing process, a photoresist is coated on a glass substrate with a thickness of several mm, the photoresist film is exposed to a laser beam that is modulated in accordance with the signals required for optical memory, and after development, a photoresist is obtained. Nickel i! on photoresist pattern! A stamper is manufactured by attaching a cast film and shaping the electroformed film. Therefore, the height of the pattern formed on the standber is basically the same as the photoresist thickness, and since the photoresist thickness directly affects the signal quality, a uniform resist film thickness is required within the plane and between the substrates. .. After cleaning and drying a glass substrate with a thickness of 6 mm and a diameter of 200 mm, a photoresist was applied using a rotary coating device. The target photo register thickness is approximately 1,000 people,
In order to keep the coating rotation speed in the range of 100 orpm or less, preliminary experiments were conducted regarding the viscosity of the photoresist solution.
2.5 and 4.5 cP. As for coating conditions, experiments were conducted using a rotation pattern as shown in Figure 2, with various levels of four factors: number of rotation stages, rotation speed, holding time, and time required to reach the rotation speed of the next rotation stage. As a result, although interactions were observed between each factor, it was found that the factor that most affected the distribution of photoresist thickness within the substrate was the rotation speed of the second rotation stage. That is, as shown in FIG.
As shown in the figure, the holding time of the second rotation stage is also correlated with the photoresist thickness distribution. The results shown in Figures 3 and 4 and other factors have little effect on the distribution of photoresist thickness, so the coating conditions that make the distribution of photoresist thickness within the substrate most uniform are the rotation of the second rotation stage. The speed should be approximately 190 rpm, and the holding time should be 6 seconds or more. Furthermore, since the rotation speeds of the first and third rotation stages affect the photoresist thickness, the photoresist thickness can be adjusted by the rotation speeds. An example of the relationship between the third stage rotation speed and the photoresist thickness is shown in FIG.

ここでは第一段回転数を2Orpmに、第二段回転数を
190rpmに固定した.第5図より、フォトレジスト
液粘度が2.5cPの場合には、フォトレジスト厚みを
1000人とするためには第三段回転数を30Orpm
とすれば良い.第1図に1000人のフォトレジスト膜
を形成する場合の回転パターンを示す.第5図に示した
各測定点での、基板面内でのフォトレジスト厚みのばら
つき(レンジ)は第1表に示すとおりでレンジとしては
25人以内を達成しており、また、フォトレジストの跳
ね返りによる欠陥は全く開生じておらず、不良は異物の
付着によるものだけであった.また、第一段回転数とフ
ォトレジスト厚みの関係の1例を第6図に示す。これは
フォトレジスト液粘度が2,5cPに、第二段回転数を
190rpmに、第三段回転数を300.rpmに固定
した場合の例であるが、第5図の場合と同様、フォトレ
ジスト厚みのレンジは25人以内であった.跳ね返りに
よる欠陥は塗布装置の内壁の形状や、基板の直径第1表 にもよるが、約100Orpm以上から発生すると考え
てよい.従って、所望のフォトレジスト厚みを得るため
に第三段回転数を100Orpmより大きくしなければ
ならないときはフォトレジスト液粘度を変える必要があ
る.また、角型基板を用いる場合でも、同一の品質のフ
ォトレジスト膜の形成が可能であった.これまで述べて
きたように従来数千rpmもの高回転を要していたフォ
トレジスト塗布に対し、数百rpmの回転領域での均一
なフォトレジスト塗布条件を確立したため、塗布装置の
回転系に対する負荷が軽減され、また、基板に対する遠
心力が激減したために基板が破壊されることは事実上な
くなり、さらにはフォトレジスト液の跳ね返りによる欠
陥も発生しなくなった. [発明の効果] 以上述べたように本発明によれば、基板上にフォトレジ
ストを回転塗布する工程において、一定回転数を一定時
間保持する回転段を2段以上有し、第一回転段において
フォトレジスト液を基板上に滴下し、第二回転段におい
て回転数を約19orpm、保持時間を6゛秒以上とす
ることにより、基板面内で均一な膜厚のフォトレジスト
膜をフォトレジスト液の跳ね返りによる欠陥を生じさせ
ずに形成することが出来る.即ち、数百ppmの領域で
の均一、無欠陥なフォトレジスト膜の形成技術を確立し
たことで、特に大面積の基板上へのフォトレジスト塗布
工程での品質と歩留まりが向上するという効果を有する
.また、塗布装置においては、数千rpmで回転させる
必要がないため、同装置の回転系の性能、精度を抑える
ことが出来、さらには、回転系の磨耗が無視出来るよう
になったため、あらゆる面でのコストが低減出来るとい
う効果も有する.
Here, the first stage rotation speed was fixed at 2 Orpm and the second stage rotation speed was fixed at 190 rpm. From Figure 5, when the photoresist liquid viscosity is 2.5 cP, the third stage rotation speed must be 30 Orpm in order to make the photoresist thickness 1000.
It is sufficient to do this. Figure 1 shows the rotation pattern when forming a photoresist film for 1000 people. The variation (range) of photoresist thickness within the substrate surface at each measurement point shown in Figure 5 is as shown in Table 1, and the range was within 25 people. There were no defects caused by rebound, and the only defects were due to adhesion of foreign matter. Further, an example of the relationship between the first stage rotation speed and the photoresist thickness is shown in FIG. This means that the photoresist liquid viscosity is 2.5 cP, the second stage rotation speed is 190 rpm, and the third stage rotation speed is 300. This is an example where the rpm is fixed, but as in the case of Fig. 5, the range of photoresist thickness was within 25 people. Defects due to rebound depend on the shape of the inner wall of the coating device and the diameter of the substrate shown in Table 1, but can be considered to occur at approximately 100 rpm or higher. Therefore, if the third stage rotational speed must be increased above 100 rpm to obtain the desired photoresist thickness, it is necessary to change the viscosity of the photoresist liquid. Furthermore, even when using a square substrate, it was possible to form a photoresist film of the same quality. As mentioned above, unlike photoresist coating that conventionally required high rotation speeds of several thousand rpm, we have established uniform photoresist coating conditions in a rotation range of several hundred rpm, which places less stress on the rotation system of the coating equipment. In addition, because the centrifugal force on the substrate was drastically reduced, the substrate was virtually no longer destroyed, and defects due to photoresist liquid splashing also no longer occurred. [Effects of the Invention] As described above, according to the present invention, in the process of spin-coating photoresist on a substrate, there are two or more rotation stages that maintain a constant rotation speed for a certain period of time, and in the first rotation stage, By dropping the photoresist solution onto the substrate and setting the rotation speed to about 19 orpm and holding time for 6 seconds or more in the second rotation stage, a photoresist film with a uniform thickness can be formed on the substrate surface using the photoresist solution. It can be formed without causing defects due to rebound. In other words, by establishing a technique for forming a uniform, defect-free photoresist film in the hundreds of ppm range, it has the effect of improving quality and yield, especially in the photoresist coating process on large-area substrates. .. In addition, since coating equipment does not need to rotate at several thousand rpm, the performance and accuracy of the equipment's rotating system can be reduced, and wear on the rotating system can be ignored, making it possible to It also has the effect of reducing costs.

【図面の簡単な説明】[Brief explanation of drawings]

第1図、第2図は本発明における回転パターンの概略図
、第3図は本発明における第二段回転数と基板半径方向
の膜厚分布の関係を示す図、第4図は本発明における第
二段保持時間と膜厚のレンジの関係を示す図、第5図は
本開明における第三段回転数と膜厚の関係を示す図、第
6図は本開明における第一段回転数と膜厚の関係を示す
図.1・・・第一回転段 2・・・第二回転段 3・・・第三回転段 1 1力 1 1 2 2 茅 J 1z ネ 十 i力 茅三fi口矛も1尺 ネ 5 図 弊一片■j1l牧 耳 ら 図
FIGS. 1 and 2 are schematic diagrams of the rotation pattern in the present invention, FIG. 3 is a diagram showing the relationship between the second stage rotation speed and the film thickness distribution in the substrate radial direction in the present invention, and FIG. A diagram showing the relationship between the second stage holding time and the film thickness range, Figure 5 is a diagram showing the relationship between the third stage rotation speed and film thickness in the present invention, and Figure 6 is a diagram showing the relationship between the first stage rotation speed and the film thickness in the present invention. Diagram showing the relationship between film thickness. 1...First rotation stage 2...Second rotation stage 3...Third rotation stage 1 1 force 1 1 2 2 Kaya J 1z Piece ■j1l Makimimi et al.

Claims (2)

【特許請求の範囲】[Claims] (1)基板上にフォトレジストを回転塗布する工程にお
いて、一定回転数を一定時間保持する回転段を2段以上
有し、第一回転段においてフォトレジスト液を基板上に
滴下し、第二回転段において回転数を約190rpm、
保持時間を6秒以上とすることを特徴とするフォトレジ
ストの塗布方法
(1) In the process of spin-coating photoresist onto a substrate, there are two or more rotation stages that maintain a constant rotation speed for a certain period of time, and the first rotation stage drops the photoresist solution onto the substrate, and the second rotation stage At the stage, the rotation speed is approximately 190 rpm,
A photoresist coating method characterized by a holding time of 6 seconds or more
(2)基板上にフォトレジストを回転塗布する工程にお
いて、フォトレジスト液粘度を2.5から6.5cPと
し、一定回転数を一定時間保持する回転段を3段有し、
第一回転段において、フォトレジストを基板上に滴下し
、第二回転段において回転数を約190rpm、保持時
間を6秒以上とし、第三回転段において回転数を190
から1000rpmとし、厚みが500から3000Å
のフォトレジスト膜を形成することを特徴とする第1項
記載のフォトレジストの塗布方法
(2) In the process of spin coating the photoresist on the substrate, the viscosity of the photoresist liquid is set from 2.5 to 6.5 cP, and there are three rotation stages that maintain a constant rotation speed for a certain period of time;
In the first rotation stage, the photoresist is dropped onto the substrate, in the second rotation stage, the rotation speed is approximately 190 rpm and the holding time is 6 seconds or more, and in the third rotation stage, the rotation speed is increased to 190 rpm.
to 1000 rpm, and the thickness is 500 to 3000 Å.
2. The photoresist coating method according to item 1, which comprises forming a photoresist film of
JP18538589A 1989-07-18 1989-07-18 Method for applying photoresist Pending JPH0352673A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18538589A JPH0352673A (en) 1989-07-18 1989-07-18 Method for applying photoresist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18538589A JPH0352673A (en) 1989-07-18 1989-07-18 Method for applying photoresist

Publications (1)

Publication Number Publication Date
JPH0352673A true JPH0352673A (en) 1991-03-06

Family

ID=16169886

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18538589A Pending JPH0352673A (en) 1989-07-18 1989-07-18 Method for applying photoresist

Country Status (1)

Country Link
JP (1) JPH0352673A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8140519B2 (en) 2000-10-17 2012-03-20 Mekiki Co., Ltd. Human relationships registering system and device for registering human relationships, program for registering human relationships, and medium storing human relationships registering program and readable by computer
JP2015213887A (en) * 2014-05-12 2015-12-03 東京エレクトロン株式会社 Coated film formation method, coated film formation device and storage medium

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8140519B2 (en) 2000-10-17 2012-03-20 Mekiki Co., Ltd. Human relationships registering system and device for registering human relationships, program for registering human relationships, and medium storing human relationships registering program and readable by computer
US8645427B2 (en) 2000-10-17 2014-02-04 Mekiki Co., Ltd. Human relationships registering system and device for registering human relationships, program for registering human relationships, and medium storing human relationships registering program and readable by computer
US8661058B2 (en) 2000-10-17 2014-02-25 Mekiki Co., Ltd. Human relationships registering system and device for registering human relationships, program for registering human relationships, and medium storing human relationships registering program and readable by computer
US9576059B2 (en) 2000-10-17 2017-02-21 Mekiki Co., Ltd. Human relationships registering system and device for registering human relationships, program for registering human relationships, and medium storing human relationships registering program and readable by computer
JP2015213887A (en) * 2014-05-12 2015-12-03 東京エレクトロン株式会社 Coated film formation method, coated film formation device and storage medium

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