JP3265190B2 - Method of manufacturing pellicle film - Google Patents
Method of manufacturing pellicle filmInfo
- Publication number
- JP3265190B2 JP3265190B2 JP18308896A JP18308896A JP3265190B2 JP 3265190 B2 JP3265190 B2 JP 3265190B2 JP 18308896 A JP18308896 A JP 18308896A JP 18308896 A JP18308896 A JP 18308896A JP 3265190 B2 JP3265190 B2 JP 3265190B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- pellicle film
- pellicle
- peeled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
【0001】[0001]
【発明の属する技術分野】本発明はペリクル膜の製造方
法、特にLSI、超LSIなどの半導体デバイスあるい
は液晶表示板を製造する際のゴミよけとして使用される
ペリクル膜の製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a pellicle film, and more particularly to a method of manufacturing a pellicle film used as a dust proof when manufacturing a semiconductor device such as an LSI or a super LSI or a liquid crystal display panel. .
【0002】[0002]
【従来の技術】LSI、超LSIなどの半導体デバイス
あるいは液晶表示板などの製造においては、半導体ウエ
ハーあるいは液晶用原板に光を照射してパターニングを
するが、この場合に用いる露光原版にゴミが付着してい
ると、このゴミが光を吸収したり、光を反射してしまう
ため、転写したパターニングが変形したり、エッジが、
がさついたりして、寸法、品質、外観などがそこなわ
れ、半導体装置や液晶表示板などの性能や製造歩留まり
の低下を来すという問題があった。2. Description of the Related Art In the manufacture of semiconductor devices such as LSIs and VLSIs, or liquid crystal display panels, semiconductor wafers or liquid crystal original plates are irradiated with light to perform patterning. In this case, the dust absorbs light or reflects light, so that the transferred pattern is deformed,
However, the size, quality, appearance, and the like are impaired, and the performance and manufacturing yield of semiconductor devices and liquid crystal display panels are reduced.
【0003】このため、これらの作業は通常クリーンル
ーム内で行われるが、このクリーンルーム内でも露光原
版を常に正常に保つことが難しいので、露光原版の表面
に、ゴミをよけ、且つ露光用の光を良く通過させるペリ
クル膜を貼着する方法が行われている。この場合、ゴミ
は露光原版の表面には直接付着せず、ペリクル膜上に付
着するため、リソグラフィー時に焦点を露光原版のパタ
ーン上に合わせておけば、ペリクル膜上のゴミは転写に
無関係となる。このペリクル膜は、ニトロセルロース、
酢酸セルロースなどからなる、光を良く通過させる透明
なもので、このペリクル膜をアルミニウム、ステンレス
などからなるペリクル枠の上部にペリクル膜の良溶媒を
塗布し、風乾して接着する(特開昭58-219023 号公報参
照)か、またはこれをアクリル樹脂やエポキシ樹脂など
の接着剤で接着する(米国特許第4,861,402 号、特公昭
63-27、707 号各公報参照)という方法が採られている。[0003] For this reason, these operations are usually performed in a clean room. However, it is difficult to always keep the exposure master normal even in this clean room. A pellicle membrane that adheres well to the pellicle is adhered. In this case, the dust does not directly adhere to the surface of the exposure original plate, but adheres to the pellicle film. Therefore, if the focus is set on the pattern of the exposure original plate during lithography, the dust on the pellicle film becomes irrelevant to the transfer. . This pellicle membrane is made of nitrocellulose,
This pellicle film is made of cellulose acetate or the like and is transparent to allow good light to pass through. A good solvent for the pellicle film is applied to the upper part of a pellicle frame made of aluminum, stainless steel, etc., and air-dried and adhered (Japanese Patent Application Laid-Open No. 58-1983). (See U.S. Pat. No. 4,861,402, US Pat. No. 4,861,402)
63-27, 707).
【0004】[0004]
【発明が解決しようとする課題】このペリクル膜の製造
方法は、前記膜材料を溶媒に溶解させて、3〜10%の濃
度の溶液にした後、これをスピンコーターやナイフコー
ターを用いる溶液キャスト法でシリコンウエハーやガラ
ス基板上で成膜させる方法が行われており、このように
して作製されたペリクル膜はこの基板上に成膜させられ
た後、基板上から剥離させられる。しかしペリクル膜は
通常高い透過率を得るために非常に薄い高分子膜であ
り、膜強度が非常に小さいので、基板から剥離させよう
とする際、膜が破れてしまうという問題点があった。In this method of manufacturing a pellicle film, the film material is dissolved in a solvent to form a solution having a concentration of 3 to 10%, and the solution is cast using a spin coater or a knife coater. A method of forming a film on a silicon wafer or a glass substrate by a method is performed, and the pellicle film thus formed is formed on the substrate and then separated from the substrate. However, the pellicle film is usually a very thin polymer film in order to obtain a high transmittance, and has a very small film strength, so that there is a problem that the film is broken when it is to be peeled off from the substrate.
【0005】[0005]
【課題を解決するための手段】本発明はこのような問題
点を解決するペリクル膜の製造方法に関するものであ
り、ペリクル膜を基板から剥離させる際、ペリクル膜に
帯電する電荷と同種の電荷を基板に付与した状態でペリ
クル膜を剥離させることを特徴とするものである。The present invention SUMMARY OF] is a method for manufacturing a pellicle film to solve such problems, when for peeling the pellicle film from the substrate, the pellicle film
The pellicle film is peeled off in a state where the same kind of charge as that to be charged is applied to the substrate .
【0006】即ち、本発明者は基板上に成膜させたペリ
クル膜を基板から剥離させる方法について種々検討した
結果、ペリクル膜を基板から剥離させる際、ペリクル膜
に帯電する電荷と同種の電荷を基板に付与した状態でペ
リクル膜を剥離させる方法を見出した。これにより、膜
が破れることなく剥離が可能となり、目的とするペリク
ル膜を容易に、且つ効率よく得ることができることを見
出した。That is, as a result of various studies on the method of peeling the pellicle film formed on the substrate from the substrate, the present inventors have found that when the pellicle film is peeled from the substrate,
The present inventors have found a method of peeling a pellicle film in a state in which the same kind of charge as that charged to a substrate is applied to a substrate . As a result, it has been found that peeling can be performed without breaking the film, and a target pellicle film can be easily and efficiently obtained.
【0007】以下にこれについて詳細に説明する。本発
明はペリクル膜の製造方法に関するものであり、これに
よれば、膜が破れることなくペリクルとして商品価値の
ある膜が得られる。本発明のペリクル膜の製造方法は、
常法により基板上に成膜したペリクル膜を、基板から剥
離させる工程の改良に関するものであり、これは剥離時
に基板に電荷を付与して剥離させるものである。Hereinafter, this will be described in detail. The present invention relates to a method for producing a pellicle film, and a film having commercial value as a pellicle can be obtained without breaking the film. The method for producing a pellicle film of the present invention comprises:
The present invention relates to an improvement in a process of peeling a pellicle film formed on a substrate by a conventional method from a substrate, and to impart a charge to the substrate at the time of peeling to peel the substrate.
【0008】[0008]
【発明の実施の形態】本発明の方法はペリクル膜形成材
料を溶剤に溶解して、濃度が3〜10重量%の溶液を作製
し、この溶液をスピンコーターやナイフコーターなどを
用いる溶液キャスト法でシリコン基板やガラス基板の上
にペリクル膜として成膜させた後、これを基板から剥離
させてペリクル膜を作製するのであるが、本発明はこの
際、ペリクル膜に帯電する電荷と同種の電荷を基板に付
与した状態でペリクル膜を剥離させる。これは、基板と
膜は異なる物質であり、それらが互いに分離する場合に
は基板と膜に正負の電荷が生じる。この電荷が引力を発
生し、これに打ち勝たなければ膜の剥離を行うことがで
きない。ここで剥離時に膜に発生する電荷と同じ電荷を
基板に付与すれば、電荷の引力を打ち消すことができ剥
離が可能になる。DESCRIPTION OF THE PREFERRED EMBODIMENTS In the method of the present invention, a pellicle film forming material is dissolved in a solvent to prepare a solution having a concentration of 3 to 10% by weight, and this solution is subjected to a solution casting method using a spin coater or a knife coater. in after deposited as a pellicle film on a silicon substrate or glass substrate, although this is to make the pellicle film is peeled from the substrate, the present invention is at this time, electric charge of the same kind of charge charged pellicle film Attached to the substrate
The pellicle film is peeled off in the state given. This is because the substrate and the film are different materials, and when they are separated from each other, positive and negative charges are generated in the substrate and the film. This charge generates an attractive force, and the film cannot be peeled unless it is overcome. Here, if the same charge as the charge generated in the film at the time of separation is applied to the substrate, the attractive force of the charge can be canceled and separation can be performed.
【0009】本発明で使用されるペリクル膜形成材料と
しては、通常のペリクル膜用のものが使用可能であり、
それには前記したニトロセルロース、酢酸セルロースな
どのセルロース誘導体;ポリビニルプロピオナール、ポ
リビニルブチラール等のポリビニルアセタール;ポリカ
ーボネート;ポリメタクリル酸メチル;ポリエチレンテ
レフタレート;パーフルオロポリマーなどが使用可能で
あり、溶剤としては、シクロヘキサノン、メチルプロピ
ルケトン、酢酸エチル、酢酸メチル、パーフルオロトリ
ブチルアミンなどが使用可能である。また膜厚は通常
0.5μm〜10μmの透明膜として形成させ、成膜条
件は乾燥温度80〜250 ℃、乾燥時間1 〜20分で
ある。As the pellicle film forming material used in the present invention, those for ordinary pellicle films can be used.
Cellulose derivatives such as nitrocellulose and cellulose acetate described above; polyvinyl acetal such as polyvinyl propional and polyvinyl butyral; polycarbonate; polymethyl methacrylate; polyethylene terephthalate; perfluoropolymer, etc. can be used. , Methyl propyl ketone, ethyl acetate, methyl acetate, perfluorotributylamine and the like can be used. Further, the film is usually formed as a transparent film having a thickness of 0.5 μm to 10 μm, and the film formation conditions are a drying temperature of 80 to 250 ° C. and a drying time of 1 to 20 minutes.
【0010】本発明の方法における電荷付与の具体的方
法は、図1に示すように静電気発生装置1で電荷を発生
させ、ケーブルを用いて、その電荷を成膜基板2に注入
し、電荷を付与した状態で剥離用治具3により剥離させ
る。注入する電荷は陰か陽かのいずれかであるが、これ
は膜材質と基板材質により決まる。例えば膜材質が基板
材質よりも陰に帯電しやすい場合、基板には陰電荷を注
入しなければならない。電圧の範囲は±1,000V〜
±100,000Vであり、この値も膜材質、基板材質
により変化する。In a specific method for applying charges in the method of the present invention, as shown in FIG. 1, charges are generated by an electrostatic generator 1 and the charges are injected into a film-forming substrate 2 using a cable, and the charges are transferred. The applied jig 3 is peeled by the peeling jig 3. The charge to be injected is either positive or negative, which depends on the material of the film and the material of the substrate. For example, when the film material is more easily negatively charged than the substrate material, a negative charge must be injected into the substrate. Voltage range is ± 1,000V ~
± 100,000 V, and this value also changes depending on the film material and the substrate material.
【0011】[0011]
【実施例】次に本発明を実施例を挙げて更に詳しく説明
するが、本発明はこれに限定されるものではない。 (ペリクル膜形成法)膜形成材料としてサイトップCT
X−S[旭硝子(株)製商品名]を、その溶剤としてパ
ーフルオロトリブチルアミン・CT solv.180 [旭硝子
(株)製商品名]に溶解して5重量%溶液とした。つい
でこの溶液を直径 200mm、厚さ 1.2mmの表面を研磨した
シリコン基板上に、スピンコーターを用いて膜厚0.82μ
mの透明膜として形成させ、 180℃で15分間乾燥してペ
リクル膜を成膜した。これを実施例及び比較例に使用し
た。Next, the present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples. (Pellicle film forming method) Cytop CT as a film forming material
XS [trade name of Asahi Glass Co., Ltd.] was dissolved in perfluorotributylamine.CT solv.180 [trade name of Asahi Glass Co., Ltd.] as a solvent to obtain a 5% by weight solution. Then, the solution was coated on a silicon substrate having a diameter of 200 mm and a thickness of 1.2 mm with its surface polished to a thickness of 0.82 μm using a spin coater.
m, and dried at 180 ° C. for 15 minutes to form a pellicle film. This was used in Examples and Comparative Examples.
【0012】(実施例1)上記で得られたペリクル膜に
ついて温度23℃、相対湿度50%のクリーンルーム内で、
前記図1の説明のように剥離部に静電気発生装置により
−1,000V及び−50,000V の電圧をかけた状態で剥離用治
具を用いて剥離させた。 (比較例1)比較のため、ペリクル膜の基板上剥離部に
電圧をかけない状態で剥離させた。上記3件の剥離の難
易度の比較について表1に記載した。(Example 1) The pellicle film obtained above was placed in a clean room at a temperature of 23 ° C and a relative humidity of 50%.
As described with reference to FIG. 1, a peeling portion was peeled off by using a peeling jig while applying voltages of -1,000 V and -50,000 V by an electrostatic generator. (Comparative Example 1) For comparison, the pellicle film was peeled off without applying a voltage to the peeled portion on the substrate. Table 1 shows a comparison of the difficulty levels of the above three peelings.
【0013】[0013]
【表1】 [Table 1]
【0014】[0014]
【発明の効果】本発明の方法により、空気中でのペリク
ル膜の基板からの剥離が可能となり、目的とするペリク
ル膜を容易に、且つ効率よく得ることができる。According to the method of the present invention, the pellicle film can be separated from the substrate in the air, and the desired pellicle film can be obtained easily and efficiently.
【図1】本発明におけるペリクル膜の基板からの剥離方
法を説明する概略図である。FIG. 1 is a schematic view illustrating a method of peeling a pellicle film from a substrate in the present invention.
1 静電気発生装置、 2 基板、 3 剥離用治具。 1 static electricity generator, 2 substrate, 3 peeling jig.
Claims (1)
から剥離させるペリクル膜の製造方法において、ペリク
ル膜に帯電する電荷と同種の電荷を基板に付与した状態
でペリクル膜を剥離させることを特徴とするペリクル膜
の製造方法。The method according to claim 1 pellicle film formed on a substrate in a manufacturing method of the pellicle film is peeled off from the substrate surface, Periku
A method for producing a pellicle film, wherein the pellicle film is peeled off in a state where the same kind of charge as that charged on the pellicle film is applied to the substrate .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18308896A JP3265190B2 (en) | 1996-07-12 | 1996-07-12 | Method of manufacturing pellicle film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18308896A JP3265190B2 (en) | 1996-07-12 | 1996-07-12 | Method of manufacturing pellicle film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1026821A JPH1026821A (en) | 1998-01-27 |
| JP3265190B2 true JP3265190B2 (en) | 2002-03-11 |
Family
ID=16129556
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18308896A Expired - Fee Related JP3265190B2 (en) | 1996-07-12 | 1996-07-12 | Method of manufacturing pellicle film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3265190B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102773461B1 (en) * | 2019-12-13 | 2025-02-27 | 미쯔이가가꾸가부시끼가이샤 | Method for demounting a pellicle, and device for demounting a pellicle |
-
1996
- 1996-07-12 JP JP18308896A patent/JP3265190B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1026821A (en) | 1998-01-27 |
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