JPH08264817A - Method of manufacturing thin film solar cell - Google Patents

Abstract

PURPOSE: To provide a method of manufacturing a thin film solar cell capable of achieving high efficiency neither contaminating the surface of a semiconductor film nor roughening the surface of a glass substrate. CONSTITUTION: The method is composed of the three steps as follows; the first step (e) of coating a glass substrate 9 with a semiconductor film 1 to be a formed generating layer, the second step (f) of forming a film 20 on the surface of the semiconductor film 1 as if covering through holes 4 in the semiconductor film 1 and the third step of removing the film 20 excluding the through hole parts for surface processing the semiconductor film 1 to form electrodes. Through these procedures, the surface is previously protected by a resistant film to processing solution not to make the processing solution used in said steps decompose or resolve a bonding agent or glass so that the method of manufacturing high efficient thin film solar cell neither contaminating the surface of semiconductor film 1 nor roughening the surface of the glass substrate 9 may be provided.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a thin film solar cell, and more particularly to a method for suppressing contamination of the electrode forming surface of a semiconductor film and the surface of a glass substrate during the manufacturing process.

[0002]

2. Description of the Related Art FIGS. 9 and 10 are schematic views for explaining a conventional method for manufacturing a thin film solar cell in accordance with manufacturing steps. Reference numeral 1 is a p-type semiconductor film made of, for example, silicon, 2 is a release layer made of, for example, a silicon oxide film, 3 is a substrate made of, for example, silicon having a surface covered with the release layer 2, and a semiconductor film is provided on the surface of the release layer 2. 1 is formed.

Reference numeral 4 denotes a through hole provided in the semiconductor film 1 so as to allow the release layer 2 to be dipped with an etching solution from the surface of the semiconductor film 1. Reference numeral 5 is an n-type impurity diffusion layer formed by phosphorus diffusion using POCl3 for covering the semiconductor film 1, and reference numeral 6 is an antireflection film made of, for example, a silicon nitride film covering the impurity diffusion layer 5.

In FIG. 10, 7 is a first electrode made of silver or aluminum formed on the impurity diffusion layer 5 by vapor deposition or sputtering, and 8 is a second electrode made of silver or aluminum like the first electrode. And is formed on the semiconductor 1.
Reference numeral 9 is a glass substrate, and 10 is an adhesive made of, for example, transparent silicon resin, which adheres the back surface of the glass substrate 9 and the surface of the semiconductor film 1 on which the antireflection film 6 is formed.

Next, a conventional method for manufacturing a thin film solar cell will be described with reference to FIGS. 9 (a) to 9 (d) and FIGS. 10 (e) to 10 (g). First, as shown in FIG. 9A, the semiconductor film 1
Is formed on the substrate 3 whose surface is covered with the peeling layer 2. Next, as shown in FIG. 9B, a through hole 4 penetrating the semiconductor film 1 is formed from the front surface side of the semiconductor film 1, and as shown in FIG. 9C, the substrate 3 is removed by removing only the peeling layer 2. The semiconductor film 1 is separated from the substrate 3 by immersing it in a suitable etching solution. Here, the etching solution is, for example, hydrofluoric acid.

Next, as shown in FIG. 9D, after the impurity diffusion layer 5 and the antireflection film 6 are sequentially formed on the surface layer of the semiconductor film 1, as shown in FIG. 1 is attached to the glass substrate 9 with an adhesive 10. And FIG.
As shown in 0 (f), the antireflection film 6 is formed by photoengraving and C
After patterning by dry etching or the like using F4, the impurity diffusion layer 5 is removed by etching from the semiconductor film 1 using the antireflection film 6 as a mask. The etching liquid used here is, for example, an aqueous potassium hydroxide solution.

After removing the impurity diffusion layer 5 by etching, as shown in FIG. 10G, the antireflection film 6 around the through hole 4 is removed by dry etching or the like to form the first electrode on the impurity diffusion layer 5. 7 and the second electrode 8 is formed on the semiconductor film 1. Here, the electrodes 7 and 8 can be obtained, for example, by forming a metal coating on the entire surface of the impurity diffusion layer 5 or the semiconductor film 1 by vapor deposition or sputtering and then patterning the metal coating into a desired shape by photolithography.

[0008]

Since the conventional method for manufacturing a thin film solar cell is performed as described above, the adhesive exposed from the through hole during the process is, for example, hydrofluoric acid and potassium hydroxide aqueous solution. Since it is directly exposed to etching liquid such as, the adhesive may be altered or dissolved to contaminate the surface of the semiconductor film, resulting in defective patterning of the impurity diffusion layer or defective contact of the electrode, resulting in poor quality. There was a problem that

Further, since the antireflection film is formed around the semiconductor film, it is necessary to remove the antireflection film in addition to the removal of the impurity diffusion layer at the time of forming the electrode, which complicates the manufacturing process.

Furthermore, during the manufacturing process, the surface of the glass substrate may be roughened by the etching solution such as clouding or the glass substrate may be deformed, so that the diffused reflection of the incident light reduces the amount of incident light and the solar cell There is a problem that the power generation efficiency decreases.

The present invention has been made to solve the above problems, and a thin film solar cell which does not contaminate the electrode forming surface and the light incident surface of the glass substrate and does not deform the glass substrate in the manufacturing process. It aims at providing the manufacturing method of.

[0012]

According to a first aspect of the present invention, there is provided a method of manufacturing a thin film solar cell, which comprises a step of forming a semiconductor film on a peeling layer on a substrate, and a through hole provided in the semiconductor film. A step of separating the semiconductor film from the substrate by removing the peeling layer, a step of sequentially forming an impurity diffusion layer and an antireflection film on the surface layer of the separated semiconductor, and a step of forming the formed semiconductor film. A step of adhering to the glass substrate, a step of forming a film on the surface of the semiconductor film so as to cover the through hole, and a step of removing the film other than the through hole portion to form the surface of the semiconductor film for forming an electrode. And a step of performing a surface treatment.

The method of manufacturing a thin-film solar cell according to the invention of claim 2 uses a metal thin film formed by sputtering, vapor deposition or the like on the film covering the through hole in the method of manufacturing the thin-film solar cell of the invention of claim 1. It is a thing.

A method of manufacturing a thin-film solar cell according to a third aspect of the present invention is the method of manufacturing a thin-film solar cell according to the second aspect of the invention, in which the metal thin film covering the through hole has at least silver, titanium,
Any one of aluminum or a combination of each is used.

A method of manufacturing a thin-film solar cell according to a fourth aspect of the present invention is the method of manufacturing a thin-film solar cell according to the second aspect of the present invention, in which a printing paste containing a metal as a main component is used as a coating for covering the through hole. is there.

According to a fifth aspect of the present invention, there is provided a method for producing a thin-film solar cell according to the fourth aspect, wherein the printing paste covering the through holes is combined with at least one of silver and aluminum or each of them. It was used.

According to a sixth aspect of the present invention, there is provided a method for producing a thin film solar cell in which the coating film for covering the through hole is made of a coal tar printing resist.

A method of manufacturing a thin-film solar cell according to a seventh aspect of the present invention is the method of manufacturing a thin-film solar cell according to the first aspect of the invention, in which an antireflection film is formed on the surface of the semiconductor film adhered to the glass substrate. Is.

According to an eighth aspect of the present invention, there is provided a method for manufacturing a thin film solar cell, wherein a step of forming a semiconductor film on a peeling layer on a substrate and a through hole formed in the semiconductor film are passed through to remove the peeling layer. By doing so, a step of separating the semiconductor film from the substrate, a step of forming an impurity diffusion layer on a surface layer of the separated semiconductor film, and a step of depositing the formed semiconductor film on a glass substrate having a film formed thereon The method includes a step, a step of subjecting the surface of the semiconductor film to a surface treatment for forming an electrode, and a step of removing the coating film formed on the surface of the antireflection film.

According to a ninth aspect of the present invention, there is provided a method of manufacturing a thin film solar cell, wherein a step of forming a semiconductor film on a peeling layer on a substrate and a through hole formed in the semiconductor film are passed through to remove the peeling layer. By separating the semiconductor film from the substrate, a step of forming an impurity diffusion layer on the surface layer of the separated semiconductor film, a glass whose light incident surface is covered with a film of the formed semiconductor film A step of adhering to the substrate, a step of forming a film on the surface of the semiconductor film so as to cover the through hole,
And a step of performing a surface treatment for forming an electrode on the surface of the semiconductor film by removing the coating other than the through hole portion, and a step of removing the coating covered by the light incident surface of the glass substrate. is there.

According to a tenth aspect of the present invention, there is provided a method for producing a thin film solar cell according to the eighth or ninth aspect of the present invention, in which the metal thin film formed by sputtering, vapor deposition or the like is formed on the film covering the glass substrate. It is used.

The method of manufacturing a thin-film solar cell according to the invention of claim 11 is the method of manufacturing a thin-film solar cell according to the invention of claim 10, wherein at least silver is used for at least one kind of metal thin film covering the glass substrate.

According to a twelfth aspect of the present invention, there is provided a method for producing a thin film solar cell according to the eighth or ninth aspect, wherein an antireflection film is previously formed on the surface of the glass substrate and a film is formed thereon. Is to be covered with.

A method of manufacturing a thin-film solar cell according to a thirteenth aspect of the present invention is the method of manufacturing a thin-film solar cell according to the twelfth aspect of the invention, in which a metal thin film formed by sputtering, vapor deposition, or the like on the coating covering the antireflection film from above. Is used.

According to a fourteenth aspect of the present invention, there is provided a method for producing a thin film solar cell according to the thirteenth aspect, wherein at least silver is used for at least one kind of metal thin film covering the antireflection film. Is.

[0026]

In the method of manufacturing a thin-film solar cell according to the invention of claim 1, since the surface of the semiconductor film is surface-treated for forming an electrode after the through-hole is covered with a film, the adhesive is used for surface-treating through the through-hole. Do not touch the liquid agent to alter or melt it.

In the method of manufacturing a thin-film solar cell according to the second aspect of the present invention, the coating film covering the through holes can be applied to the wiring pattern for electrode formation by using a metal coating film.

In the method of manufacturing a thin-film solar cell according to the third aspect of the invention, the material of the metal film covering the through hole is silver, titanium,
By using any one of aluminum or a combination of these metals, a wiring pattern is formed on the surface of the semiconductor film so that the metal film is not corroded by the surface treatment solution or the contact property with other metal for electrode formation is not impaired. Can be formed.

In the method for manufacturing a thin-film solar cell according to the invention of claim 4, the film forming step is simplified by using a conductive printing paste for the metal film covering the through holes.

In the method for manufacturing a thin-film solar cell according to the invention of claim 5, the wiring paste is used in combination with at least one of silver and aluminum, or each of them is used in combination to simplify the film forming step and to perform surface treatment. It is possible to form a wiring pattern on the surface of the semiconductor film, which is not corroded by the liquid agent and does not impair the contact with other metals for forming electrodes.

In the method of manufacturing a thin-film solar cell according to the invention of claim 6, the coating film forming step is simplified by using a coal tar-based printing resist for the coating film covering the through hole, and the through hole can be sealed more tightly. It is possible to suppress alteration or dissolution of the.

In the method for manufacturing a thin-film solar cell according to the invention of claim 7, an antireflection film is formed on the surface of the semiconductor film on which the glass substrate is adhered, so that the film removing step on the electrode formation surface of the semiconductor film is reduced. At the same time, the number of steps for forming a semiconductor film can be reduced.

In the method of manufacturing a thin-film solar cell according to the invention of claim 8, the exposed glass substrate is covered with a film in advance, so that the glass substrate is not directly exposed to the liquid agent for surface treatment, so that the incident light is reduced. Suppress the deformation of.

In the method for manufacturing a thin-film solar cell according to the invention of claim 9, the surface of the semiconductor film is subjected to a surface treatment for forming an electrode after the through hole is covered with a film, and the adhesive is used for surface treatment through the through hole. Can be suppressed from dissolving in the liquid agent of, and by covering the exposed glass substrate with a film in advance,
Since the glass substrate is not directly exposed to the liquid agent for surface treatment, deformation of the glass substrate surface that reduces incident light is suppressed.

In the method of manufacturing a thin film solar cell according to the invention of claim 10, since the light incident surface of the glass substrate is covered with a metal film which does not peel off with a liquid agent for surface treatment of the semiconductor film, the glass substrate is manufactured in the manufacturing process of the thin film solar cell. It is possible to suppress surface roughness such as white turbidity on the light incident surface of the liquid agent for surface treatment of the semiconductor film.

In the method of manufacturing a thin-film solar cell according to the invention of claim 11, the light incident surface of the glass substrate is contaminated during the surface treatment by using at least silver for the metal film deposited on the light incident surface of the glass substrate. The metal film can be easily removed by further protecting and using nitric acid after the surface treatment.

In the method of manufacturing a thin film solar cell according to the invention of claim 12, after forming an antireflection film on the surface of a glass substrate in advance, by covering it with a film, the step of forming a film on a semiconductor film is eliminated, and the heat treatment is performed. The adverse effects of stress can be avoided.

In the method of manufacturing a thin film solar cell according to the invention of claim 13, since the antireflection film formed on the light incident surface of the glass substrate is covered with a metal film, the antireflection film of the semiconductor film is formed in the manufacturing process of the thin film solar cell. It is possible to prevent the surface treatment liquid agent from causing surface roughness such as white turbidity and irregularly reflecting incident light.

In the method for producing a thin film solar cell according to the invention of claim 14, the antireflection film is protected from contamination during the surface treatment by using at least silver for the metal film deposited on the antireflection film, and the surface treatment is carried out. After the completion, the nitric acid can be used to easily remove the metal coating.

[0040]

【Example】

Example 1. Hereinafter, a method for manufacturing a thin film solar cell according to an embodiment of the present invention will be described with reference to the drawings. 1 to 3 are schematic views for explaining a method of manufacturing a thin film solar cell according to an embodiment of the present invention in accordance with the steps.
The abbreviations 1 to 10 used in the drawings are the same as those in FIGS. 9 and 10 of the conventional example, and in FIG.
It is a film made of a metal thin film formed by sputtering or vapor deposition in the order of silver.

As shown in FIG. 1A, the semiconductor film 1 is formed on the substrate 3 whose surface is covered with the peeling layer 2. next,
As shown in FIG. 1 (b), after forming a through hole 4 penetrating the semiconductor film 1 from the surface side of the semiconductor film 1, as shown in FIG. 1 (c), an etching solution capable of removing only the peeling layer 2 is formed. And the semiconductor film 1 is separated from the substrate 3. Here, the etching solution is, for example, hydrofluoric acid. Next, as shown in FIG. 1D, the impurity diffusion layer 5 and the antireflection film 6 are sequentially formed on the surface layer of the semiconductor film 1.

When the film formation is completed, the semiconductor film 1 is attached to the glass substrate 9 with the adhesive 10 as shown in FIG. 2 (e), and the antireflection film 6 is provided as shown in FIG. 2 (f). A film 20 is formed on top. Then, the coating 20 is patterned by, for example, photolithography, and then the coating 20 is removed except for the peripheral portion including the adhesive 10 exposed from the through hole 4.

Next, after patterning by photolithography, dry etching using CF4 or etching with hot phosphoric acid or the like is applied to the antireflection film 6 as shown in FIG.
Obtain the shape as shown in. In this state, the impurity diffusion layer 5 is etched with, for example, an aqueous potassium hydroxide solution, and then the antireflection film 6 is removed by dry etching using CF4 again to obtain the shape shown in FIG.

When the patterning of the impurity diffusion layer 5 and the antireflection film 6 is completed, as shown in FIG.
The first electrode 7 and the second electrode 8 are sequentially formed. Here, the electrodes 7 and 8 can be obtained, for example, by forming them on the entire surface by vapor deposition or sputtering and then patterning them into a desired shape by photolithography.

As described above, by covering the adhesive 10 exposed from the through holes 4 with the coating film 20 in advance, it is possible to eliminate the state where the adhesive 10 directly contacts the hydrofluoric acid and potassium hydroxide aqueous solution, and It is possible to suppress alteration and dissolution of the adhesive 10, which is a pollution source on the surface of the glass substrate.

Example 2. In the first embodiment, the metal film is formed on the antireflection film 6 by sputtering or vapor deposition. However, instead of the metal film, a film is formed by using a printing paste containing silver or aluminum as a main component. Is also good. As a result, the manufacturing process of the coating is simplified and
Patterning becomes easy.

Example 3. Although the metallic coating is formed in the above-described Examples 1 and 2, for example, a coal tar printing paste may be used for the coating. As a result, the manufacturing process of the coating is further simplified.

Example 4. Although the antireflection film is formed on the entire circumference of the semiconductor film in Examples 1 to 3 above, the film removal treatment process can be simplified by avoiding the formation of the antireflection film on the pattern formation surface of the semiconductor film. Hereinafter, a method for manufacturing a thin film solar cell according to an embodiment of the present invention will be described with reference to the drawings. 4 to 5 are schematic views for explaining a method of manufacturing a thin film solar cell according to an embodiment of the present invention in accordance with the steps.

As shown in FIG. 4A, the impurity diffusion layer 5 is formed on the surface of the semiconductor film 1, and then the antireflection film 6 is formed only on one surface of the glass substrate 9. Next, as shown in FIG. 4B, the antireflection film 6 side of the semiconductor film 1 is attached to the glass substrate 9 with the adhesive 10.

Next, as shown in FIG. 4C, a film 20 is formed on the impurity diffusion layer 6 on the semiconductor film 1, and the through hole 4 is formed.
The coating 20 is removed so that the desired electrode pattern including the adhesive 10 exposed from the area remains. Here, the coating film 20 is, for example, a metal thin film formed by sputtering or vapor deposition in the order of titanium and silver. After the film is formed, as shown in FIG. 4D, the impurity diffusion layer 5 is removed by etching using the film 20 as a mask. The etching liquid used here is, for example, an aqueous potassium hydroxide solution.

Next, as shown in FIG. 5E, the second electrode 8 is formed. Here, the electrode 8 can be obtained, for example, by forming it on the entire surface by vapor deposition or sputtering and then patterning it into a desired shape by photolithography. As described above, by covering the adhesive 10 exposed from the through holes 4 with the coating film 20 in advance and using the coating film 20 as an electrode as it is, the adhesive 10 can be used as the hydrofluoric acid and potassium hydroxide aqueous solution as in Example 1. It is possible to prevent the state where the adhesive 10 is directly touched, and to suppress the deterioration and dissolution of the adhesive 10, which is a contamination source on the surface of the semiconductor film or the surface of the glass substrate.

Example 5. Although the metal film is formed on the impurity diffusion layer by sputtering or vapor deposition in the fourth embodiment, the film may be formed by using a printing paste containing silver or aluminum as a main component instead of the metal film. good. As a result, the manufacturing process of the coating is simplified and
Patterning becomes easy.

Example 6. Although the methods for suppressing the contamination of the electrode formation surface of the semiconductor film with the adhesive have been described in Examples 1 to 5 above, the present example suppresses the deformation of the glass substrate adhered to the semiconductor film. A method for manufacturing a thin film solar cell will be described with reference to the drawings.

FIG. 6 is a schematic diagram showing a method of manufacturing a thin film solar cell according to an embodiment of the present invention, and explaining the steps. The abbreviations used in the figure are the same as those in FIG. 1 of Example 1, and 30 is a film made of a silver thin film formed by, for example, sputtering or vapor deposition.

As shown in FIG. 6A, a coating film 30 is formed on one surface of the glass substrate 9 in advance, and as shown in FIG. 6B, the semiconductor film 1 is formed on the side of the glass substrate 9 where the coating film 30 is not provided. Stick with the adhesive 10. Next, as shown in FIG. 6C, the antireflection film 6 is patterned by photolithography and dry etching, and then the impurity diffusion layer 5 is removed by etching using the antireflection film 6 as a mask. The etching solution used here is an aqueous potassium hydroxide solution.

Next, as shown in FIG. 6D, the antireflection film 6 is removed, the first electrode 7 and the second electrode 8 are sequentially formed, and the coating film 30 on the surface of the glass substrate 9 is removed. Here, the electrodes 7 and 8 can be obtained, for example, by forming them on the entire surface by vapor deposition or sputtering and then patterning them into a desired shape by photolithography. Further, nitric acid, for example, is used to remove the coating film 30.

As described above, by covering the exposed glass substrate 9 with the coating film 30 in advance, the glass substrate 9 surface which reduces incident light without directly contacting the glass substrate 9 with the hydrofluoric acid and potassium hydroxide aqueous solution. Can be suppressed.

Example 7. As described above, in Example 6, the semiconductor film 1
Although the case where the antireflection film 6 is formed on the entire circumference of the glass substrate 9 via the impurity diffusion layer 5 and the semiconductor film 1 is adhered to the glass substrate 9, the antireflection film 6 is formed on the light incident surface of the glass substrate 9. The metal cover 30 may be formed after the formation. Hereinafter, a method for manufacturing a thin film solar cell according to an embodiment of the present invention will be described with reference to the drawings.

7 to 8 are schematic views for explaining a method of manufacturing a thin film solar cell according to an embodiment of the present invention in accordance with the steps thereof. The abbreviations used in the figure are the same as those in FIG. 3 of the sixth embodiment.

As shown in FIG. 7A, an impurity diffusion layer 5 is formed on the surface of the semiconductor film 1 by phosphorus diffusion using POCl3, for example. Next, as shown in FIG. 7B, the antireflection film 6 and the coating film 30 are sequentially formed on one surface of the glass substrate 9 in advance. Here, the antireflection film 6 is, for example, a magnesium fluoride film. Then, as shown in FIG. 7C, the semiconductor film 1 is attached to the side of the glass substrate 9 on which the coating film 30 is not provided with the adhesive 1
Paste with 0.

Next, as shown in FIG. 7D, the impurity diffusion layer 5 is removed by etching. The etching liquid used here is, for example, an aqueous potassium hydroxide solution. Furthermore, FIG.
As shown in (e), after the first electrode 7 and the second electrode 8 are sequentially formed, the coating film 30 on the surface of the glass substrate 9 is removed. Here, the electrodes 7 and 8 can be obtained, for example, by forming them on the entire surface by vapor deposition or sputtering and then patterning them into a desired shape by photolithography. Further, nitric acid, for example, is used to remove the coating film 30.

As described above, by covering the exposed glass substrate 9 with the coating film 30 in advance, the glass substrate 9 is prevented from being directly contacted with the hydrofluoric acid and potassium hydroxide aqueous solution, and the incident light is reduced. Can be suppressed. Further, by forming the antireflection film 6 on the glass substrate 9 in advance, the step of forming the film on the semiconductor film 1 is eliminated, and the adverse effect of thermal stress can be avoided.

Example 8. In the method for manufacturing the thin-film solar cell described in Examples 1 to 5, the adhesive 1 exposed from the through hole 4 is used.
0 is a method of manufacturing a thin film solar cell by covering the surface of the glass substrate shown in Examples 6 and 7 with a film. Therefore, by carrying out the processes of Examples 1 to 5 using a glass substrate whose one surface is covered with a metal thin film such as silver, contamination of the electrode formation surface of the semiconductor film and the light incident surface of the glass substrate and the glass substrate It is needless to say that it is possible to provide a high-quality and highly efficient thin-film solar cell manufacturing method capable of suppressing deformation.

[0064]

According to the invention of claim 1, the step of forming a semiconductor film on the release layer on the substrate and the removal of the release layer through the through holes provided in the semiconductor film A step of separating the semiconductor film from the substrate, a step of sequentially forming an impurity diffusion layer and an antireflection film on the surface layer of the separated semiconductor, a step of depositing the formed semiconductor film on a glass substrate, The method has a step of forming a film on the surface of the semiconductor film so as to cover the through hole, and a step of removing the film other than the through hole portion and subjecting the surface of the semiconductor film to a surface treatment for forming an electrode. Therefore, since the surface of the semiconductor film is subjected to a surface treatment for forming an electrode after covering the through hole with a film,
There is an effect that a high quality thin film solar cell can be manufactured without contaminating the surface of the semiconductor film in which the adhesive does not dissolve into the surface treatment liquid through the through hole.

According to the invention of claim 2, in the method of manufacturing a thin film solar cell of the invention of claim 1, a metal thin film formed by sputtering, vapor deposition or the like is used for the coating film covering the through holes. In addition to the effect of (3), since the film covering the through hole is a metal film, the film can be applied to the wiring pattern for electrode formation, the patterning design can be facilitated.

According to the invention of claim 3, in the method of manufacturing a thin film solar cell of claim 2, at least one of silver, titanium and aluminum or a combination thereof is used for the metal thin film covering the through hole. In addition to the effect of claim 2, when the material of the metal coating for covering the through hole is one of silver, titanium, aluminum, or a combination of these metals, it is corroded by a liquid agent for surface treatment or an electrode is formed. There is an effect that it is possible to manufacture a high quality thin film solar cell capable of forming a wiring pattern on the surface of a semiconductor film without impairing the contact property with other metals for use.

According to the invention of claim 4, in the method of manufacturing a thin-film solar cell of the invention of claim 2, a printing paste containing a metal as a main component is used for the coating film covering the through holes. In addition, the use of a conductive printing paste for the metal film covering the through holes has the effect of simplifying the film forming process.

According to the invention of claim 5, since at least one of silver and aluminum or a combination thereof is used in the printing paste for covering the through hole in the method for manufacturing a thin film solar cell of the invention of claim 4, In addition to the effect of item 4, when at least one of silver and aluminum or a combination thereof is used in the wiring paste, corrosion is caused by the liquid agent for surface treatment and contact with other metals for electrode formation is impaired. Since there is no wiring pattern formed on the surface of the semiconductor film, there is an effect that a high quality thin film solar cell can be manufactured.

According to the invention of claim 6, in the method of manufacturing a thin-film solar cell of the invention of claim 1, a coal tar printing resist is used for the coating film covering the through holes.
In addition to the above effect, there is an effect that the film forming step is simplified and the through hole can be more closed, so that the deterioration or dissolution of the adhesive agent can be sufficiently suppressed.

According to the invention of claim 7, in the method for manufacturing a thin film solar cell of the invention of claim 1, the antireflection film is formed on the surface of the semiconductor film adhered to the glass substrate.
In addition to the effect of claim 1, by forming an antireflection film on the surface of the semiconductor film on which the glass substrate is adhered, the film removing step on the electrode forming surface of the semiconductor film is reduced and the film forming step on the semiconductor film is performed. Is effective.

According to the invention of claim 8, the step of forming a semiconductor film on the release layer on the substrate and the removal of the release layer through the through-holes provided in the semiconductor film removes the semiconductor film. From the substrate, a step of forming an impurity diffusion layer on the surface layer of the separated semiconductor film, a step of applying the formed semiconductor film to a glass substrate having a film formed thereon, and the semiconductor film Since it has a step of performing a surface treatment for the surface of the electrode for forming an electrode, and a step of removing the coating film formed on the surface of the antireflection film, by covering the exposed glass substrate with the coating film in advance, There is an effect that deformation of the surface of the glass substrate that reduces incident light can be suppressed without directly touching the surface treatment liquid agent.

According to the invention of claim 9, the step of forming a semiconductor film on the peeling layer on the substrate, and the peeling layer is removed through the through hole provided in the semiconductor film to remove the semiconductor film. From the substrate, a step of forming an impurity diffusion layer on the surface of the separated semiconductor film, and a step of depositing the formed semiconductor film on a glass substrate whose light incident surface is covered with a film. A step of forming a film on the surface of the semiconductor film so as to cover the through hole, a step of removing the film other than the through hole portion and performing a surface treatment for forming an electrode on the surface of the semiconductor film, Since the step of removing the coating film covered with the light incident surface of the glass substrate is performed, the surface of the semiconductor film is subjected to a surface treatment for electrode formation after the through hole is covered with the coating film. From being dissolved in the surface treatment liquid. Can also by covering in advance by coating a glass substrate to be exposed, not exposed directly to the glass substrate in liquid for surface treatment, there is an effect that the deformation of the glass substrate surface can be suppressed to reduce the incident light.

According to the invention of claim 10, in the method of manufacturing a thin-film solar cell according to claim 8 or 9, a metal thin film formed by sputtering, vapor deposition or the like is used as a film covering a glass substrate. In addition to the effect of 8 or 9, since the light incident surface of the glass substrate is covered with a metal film that does not peel off with the liquid agent for surface treatment of the semiconductor film, the light incident surface of the glass substrate is covered with the semiconductor film in the manufacturing process of the thin film solar cell. There is an effect that it is possible to prevent the surface treatment liquid agent from causing surface roughness such as clouding.

According to the invention of claim 11, since at least silver is used for at least one kind of metal thin film covering the glass substrate in the method for manufacturing a thin film solar cell of the invention of claim 10, in addition to the effect of claim 10. , By using at least silver for the metal coating deposited on the light incident surface of the glass substrate to protect the light incident surface of the glass substrate from contamination during the surface treatment, it is easy to use nitric acid after the surface treatment. There is an effect that the metal film can be removed.

According to the invention of claim 12, in the method for manufacturing a thin film solar cell according to claim 8 or 9, an antireflection film is formed on the surface of the glass substrate in advance, and the antireflection film is covered with a film from above. In addition to the effect according to claim 8 or 9, in addition to forming an antireflection film on the surface of the glass substrate in advance, by covering it with a film, the film forming step on the semiconductor film is eliminated, and the adverse effect of thermal stress is avoided. The effect is that you can do it.

According to the thirteenth aspect of the present invention, in the method of manufacturing a thin-film solar cell according to the twelfth aspect of the invention, a metal thin film formed by sputtering, vapor deposition or the like is used as the coating covering the antireflection film from above. In addition to the effect of item 12, since the antireflection film formed on the light incident surface of the glass substrate is covered with the metal coating, the antireflection film is not clouded by the liquid agent for the surface treatment of the semiconductor film in the manufacturing process of the thin film solar cell. There is an effect that it is possible to suppress surface roughness and irregular reflection of incident light.

According to the fourteenth aspect of the invention, since at least silver is used for at least one kind of metal thin film covering the antireflection film from above in the method of manufacturing a thin film solar cell of the thirteenth aspect, the thirteenth aspect of the invention is described. In addition to the effect, by using at least silver for the metal film deposited on the antireflection film, the antireflection film is protected from contamination during the surface treatment, and nitric acid is used after the surface treatment to facilitate the metal coating. The effect is that can be removed.

[Brief description of drawings]

FIG. 1 is a schematic diagram for explaining a method for manufacturing a thin film solar cell according to Examples 1 to 3 of the present invention.

FIG. 2 is a schematic diagram for explaining a method for manufacturing a thin film solar cell according to Examples 1 to 3 of the present invention.

FIG. 3 is a schematic diagram for explaining a method for manufacturing a thin film solar cell according to Examples 1 to 3 of the present invention.

FIG. 4 is a schematic diagram for explaining a method for manufacturing a thin film solar cell according to Examples 4 and 5 of the present invention.

FIG. 5 is a schematic diagram for explaining a method for manufacturing a thin film solar cell according to Examples 4 and 5 of the present invention.

FIG. 6 is a schematic diagram for explaining a method for manufacturing a thin-film solar cell according to Example 6 of the present invention.

FIG. 7 is a schematic diagram for explaining a method for manufacturing a thin-film solar cell according to Example 7 of the present invention.

FIG. 8 is a schematic diagram for explaining a method for manufacturing a thin-film solar cell according to Example 7 of the present invention.

FIG. 9 is a schematic view for explaining a conventional method for manufacturing a thin film solar cell.

FIG. 10 is a schematic diagram for explaining a conventional method for manufacturing a thin film solar cell.

[Explanation of symbols]

1 semiconductor film, 2 release layer, 3 substrate, 4 through hole, 5
Impurity diffusion layer, 6 Antireflection film, 7 First electrode, 8
Second electrode, 9 glass substrate, 10 adhesive, 20
Coating, 30 coatings.

Claims (14)

[Claims] 1. A step of forming a semiconductor film in a peeling layer on a substrate, and a step of separating the semiconductor film from the substrate by removing the peeling layer through a through hole provided in the semiconductor film. A step of sequentially forming an impurity diffusion layer and an antireflection film on a surface layer of the separated semiconductor film, a step of depositing the formed semiconductor film on a glass substrate, and the semiconductor film so as to cover the through hole. And a step of forming a coating on the surface of the semiconductor film, and a step of removing the coating other than the through-hole portion and subjecting the surface of the semiconductor film to a surface treatment for forming an electrode. Method. 2. A sputtering method for coating a film covering a surface of a semiconductor film,
The method for producing a thin film solar cell according to claim 1, wherein a metal thin film formed by a vapor deposition method or the like is used. 3. The method for producing a thin-film solar cell according to claim 2, wherein at least one of silver, titanium, and aluminum or a combination thereof is used for the metal thin film. 4. The method for producing a thin-film solar cell according to claim 2, wherein a printing paste containing a metal as a main component is used for the coating. 5. The method for producing a thin film solar cell according to claim 4, wherein at least one of silver and aluminum or a combination thereof is used in the printing paste. 6. The method for producing a thin-film solar cell according to claim 1, wherein a coating resist of coal tar type is used for the film. 7. The method for producing a thin film solar cell according to claim 1, wherein an antireflection film is formed on the surface of the semiconductor film on which the glass substrate is adhered. 8. A step of forming a semiconductor film on a peeling layer on a substrate, and a step of separating the semiconductor film from the substrate by removing the peeling layer through a through hole provided in the semiconductor film. A step of forming an impurity diffusion layer on the surface layer of the separated semiconductor film, a step of depositing the formed semiconductor film on a glass substrate having a light incident surface, and a surface of the semiconductor film. And a step of removing the coating film formed on the light incident surface, and a method of manufacturing a thin-film solar cell. 9. A step of forming a semiconductor film on a peeling layer on a substrate, and a step of separating the semiconductor film from the substrate by removing the peeling layer through a through hole provided in the semiconductor film. And a step of forming an impurity diffusion layer on the surface layer of the separated semiconductor film, a step of depositing the formed semiconductor film on a glass substrate whose light-incident surface is covered with a film, and a step of covering the surface of the semiconductor film. A step of forming a film so as to cover the through hole, a step of removing the film other than the through hole portion and performing a surface treatment for forming an electrode on the surface of the semiconductor film, and a light incident surface of the glass substrate And a step of removing the coating film covered with the thin film solar cell. 10. The method for producing a thin film solar cell according to claim 8, wherein a metal thin film formed by sputtering, vapor deposition or the like is used as a coating film covering the glass substrate. 11. The method of manufacturing a thin-film solar cell according to claim 10, wherein at least silver is used in at least one kind of metal thin film that covers the glass substrate. 12. The method for manufacturing a thin-film solar cell according to claim 8 or 9, wherein an antireflection film is previously formed on the light incident surface of the glass substrate, and the film is covered with a film. 13. The method for producing a thin-film solar cell according to claim 12, wherein a metal thin film formed by sputtering, vapor deposition or the like is used as a film covering the antireflection film. 14. The method for manufacturing a thin-film solar cell according to claim 13, wherein at least silver is used for at least one kind of metal thin film covering the antireflection film.