JPH08199045A - Method for producing epoxy resin composition and semiconductor device using the resin composition - Google Patents
Method for producing epoxy resin composition and semiconductor device using the resin compositionInfo
- Publication number
- JPH08199045A JPH08199045A JP792095A JP792095A JPH08199045A JP H08199045 A JPH08199045 A JP H08199045A JP 792095 A JP792095 A JP 792095A JP 792095 A JP792095 A JP 792095A JP H08199045 A JPH08199045 A JP H08199045A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- resin composition
- filler
- producing
- alkoxysilane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
(57)【要約】
【構成】有機溶媒中に溶解したエポキシ樹脂中にアルコ
キシシラン及びpH3.0 〜6.0 の水を添加し、アル
コキシシランのアルコキシ基をシラノール基に酸触媒存
在下で加水分解した後溶媒除去し、その後の加熱処理に
より得られた無機質粒子が充填されていることを特徴と
するエポキシ樹脂組成物の製造方法。
【効果】粘度の上昇無しに充填剤の配合量を増やすこと
ができ、無機質充填剤を樹脂分の90重量部以上配合す
ることが可能である。得られた樹脂組成物の貯蔵弾性率
は、充填剤無添加のエポキシ樹脂と同等かそれ以下であ
るために、はんだリフロー時,温度サイクル時に発生す
る熱応力を低減することができる。(57) [Summary] [Structure] An alkoxysilane and water having a pH of 3.0 to 6.0 are added to an epoxy resin dissolved in an organic solvent, and the alkoxy group of the alkoxysilane is hydrolyzed to a silanol group in the presence of an acid catalyst. A method for producing an epoxy resin composition, characterized in that the solvent is removed after decomposition, and inorganic particles obtained by the subsequent heat treatment are filled. [Effect] The compounding amount of the filler can be increased without increasing the viscosity, and the inorganic filler can be compounded in an amount of 90 parts by weight or more of the resin component. Since the storage elastic modulus of the obtained resin composition is equal to or lower than that of the epoxy resin with no filler, the thermal stress generated during solder reflow and temperature cycle can be reduced.
Description
【0001】[0001]
【産業上の利用分野】本発明は無機質充填剤含有エポキ
シ樹脂組成物の製造方法、及びその組成物を用いて封止
した樹脂封止型半導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing an epoxy resin composition containing an inorganic filler, and a resin-encapsulated semiconductor device encapsulated with the composition.
【0002】[0002]
【従来の技術】近年半導体素子の集積度が年々向上し、
それに伴ってチップサイズの大型化,配線の微細化,多
層化などが進んでいる。一方、実装の高密度化のために
はパッケージサイズの小型化,薄型化が必須であり、そ
れに伴いパッケージ型樹脂層の薄型化も進んでいる。封
止樹脂が薄くなると、構成材料の熱膨張率差から生じる
熱応力によって、封止樹脂やパッシベーション膜にクラ
ックが発生し、信頼性低下の原因となる。このような熱
応力を低減するために、封止樹脂に無機質充填剤を配合
して樹脂の熱膨張率を小さくすることが一般的となって
いる。このような無機質充填剤は、通常、溶融シリカの
粉砕品または石英粉を融点以上に加熱融解して得た球形
石英粉をミキシングロールなどでエポキシ樹脂と共に溶
融混練することで添加されるが、この方法では充填剤配
合量を増やすと樹脂組成物の流動性が低下するため封止
作業が困難となる。特開昭63−128020号公報に記載のよ
うに特定の粒径及び粒度分布を有する球状の溶融石英粉
を用いて充填剤の配合量を増やす方法も提案されている
が、このような無機質充填剤は、弾性率が極めて高く
(溶融シリカ:7400kgf/mm2)樹脂組成物に高充填す
ると、得られる樹脂硬化物の弾性率が高くなる。一般に
は充填剤70〜80重量部で1500〜2500kgf/
mm2 に達する。そのため、発生する熱応力に関しては低
熱膨張化の効果を十分発揮することはできない。2. Description of the Related Art In recent years, the degree of integration of semiconductor devices has improved year by year,
Along with this, the chip size is becoming larger, the wiring is becoming finer, and the number of layers is increasing. On the other hand, in order to increase the packaging density, it is essential to reduce the package size and make the package thinner, and accordingly, the package type resin layer is also becoming thinner. When the sealing resin becomes thin, cracks occur in the sealing resin and the passivation film due to the thermal stress caused by the difference in the coefficient of thermal expansion of the constituent materials, which causes a decrease in reliability. In order to reduce such thermal stress, it is general that the sealing resin is mixed with an inorganic filler to reduce the coefficient of thermal expansion of the resin. Such an inorganic filler is usually added by melting and kneading a pulverized product of fused silica or a spherical quartz powder obtained by heating and melting quartz powder to a melting point or higher with an epoxy resin using a mixing roll or the like. In the method, if the amount of the filler compounded is increased, the fluidity of the resin composition is lowered, so that the sealing work becomes difficult. As described in JP-A-63-128020, a method of increasing the compounding amount of a filler by using spherical fused silica powder having a specific particle size and particle size distribution has been proposed, but such an inorganic filler is used. The agent has an extremely high elastic modulus
(Fused silica: 7400 kgf / mm 2 ) When the resin composition is highly filled, the elastic modulus of the obtained resin cured product increases. Generally, 70 to 80 parts by weight of filler is 1500 to 2500 kgf /
reach mm 2 . Therefore, the effect of reducing the thermal expansion cannot be sufficiently exerted with respect to the generated thermal stress.
【0003】一方、発生する熱応力の低減方法では樹脂
組成物の低弾性率化も効果的である。この樹脂硬化物の
低弾性率化の手法は、シリコン化合物等による可とう化
剤の導入が検討されている。しかし、封止材料は、高弾
性率の充填剤の分率が極めて高いため、マトリックス樹
脂の低弾性率化を図っても、封止材料としての低弾性率
化の効果はあまり顕著ではなく半導体装置では飛躍的な
熱応力の低減を達成することはできない。On the other hand, it is also effective to reduce the elastic modulus of the resin composition in the method of reducing the generated thermal stress. As a method for lowering the elastic modulus of this resin cured product, introduction of a softening agent such as a silicon compound has been studied. However, since the encapsulating material has an extremely high fraction of the filler having a high elastic modulus, even if the elastic modulus of the matrix resin is reduced, the effect of lowering the elastic modulus of the encapsulating material is not so remarkable, and the semiconductor material is not very significant. The device cannot achieve a dramatic reduction in thermal stress.
【0004】[0004]
【発明が解決しようとする課題】本発明は、このような
現状に鑑み上記の問題点を改善するためになされたもの
であり、その目的は、熱応力発生がより小さい半導体封
止用エポキシ樹脂組成物を作業性良く得ること並びに、
樹脂組成物を用いた信頼性に優れた半導体装置を提供す
ることにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances and has been made to solve the above-mentioned problems, and an object thereof is to provide an epoxy resin for semiconductor encapsulation in which thermal stress generation is smaller. To obtain the composition with good workability, and
An object is to provide a highly reliable semiconductor device using a resin composition.
【0005】[0005]
【課題を解決するための手段】本発明によるエポキシ樹
脂組成物の製造は、エポキシ樹脂,硬化剤及び硬化促進
剤を有機溶媒に溶解し、これにアルコキシシラン、及び
pH3〜6に調整した水を所定量加え、室温で所定時間
撹拌し、アルコキシ基を水酸基に加水分解する。この後
減圧下で溶媒を除去し、樹脂粉末を得る。続いて得られ
た樹脂粉末を加熱することで、樹脂の硬化及び水酸基の
脱水がなされ、樹脂中に無機質充填剤の粒子が均一に分
散したエポキシ樹脂組成物を得るものである。ここで用
いられる有機溶媒としては、アセトン,N−メチルピロ
リドン,ジメチルアセトアミドなどの、エポキシ樹脂に
対する良溶媒が選ばれる。また加える水の量は、例えば
アルコキシシランの加水分解における当量付近を選定す
ればよい。また室温での反応時間は加水分解反応が十分
進行する時間を選ぶ。一例としては3〜10時間程度で
ある。The epoxy resin composition according to the present invention is manufactured by dissolving an epoxy resin, a curing agent and a curing accelerator in an organic solvent, adding an alkoxysilane and water adjusted to pH 3 to 6 thereto. A predetermined amount is added, and the mixture is stirred at room temperature for a predetermined time to hydrolyze the alkoxy groups into hydroxyl groups. After that, the solvent is removed under reduced pressure to obtain a resin powder. By subsequently heating the obtained resin powder, the resin is cured and the hydroxyl groups are dehydrated to obtain an epoxy resin composition in which the particles of the inorganic filler are uniformly dispersed in the resin. As the organic solvent used here, a good solvent for the epoxy resin such as acetone, N-methylpyrrolidone, or dimethylacetamide is selected. The amount of water to be added may be selected in the vicinity of the equivalent amount in the hydrolysis of alkoxysilane, for example. The reaction time at room temperature is selected so that the hydrolysis reaction proceeds sufficiently. As an example, it is about 3 to 10 hours.
【0006】この方法によると全構成材料を溶液中で混
合するために充填剤が均一に分散し、充填剤遍在によっ
て内部応力が局部的に不均一になることを防止できる。
充填剤の粒径は、加水分解時に添加される水の酸性度を
pH3〜6に調整することで10μm以下にコントロー
ルできる。すなわち、pHが3以下であると粒子の凝集
が生じ、充填剤の均一な分散が妨げられ、pH6以上で
は加水分解反応が遅くなり実用的でない。また、この方
法によると、構成材料の混合が溶液中で行われるため
に、粘度が上昇することなく充填剤の配合量を増やすこ
とができ、無機質充填剤を樹脂分の90重量部以上配合
することが可能である。According to this method, since all the constituent materials are mixed in the solution, the filler is uniformly dispersed, and it is possible to prevent the internal stress from being locally nonuniform due to the uneven distribution of the filler.
The particle size of the filler can be controlled to 10 μm or less by adjusting the acidity of water added during hydrolysis to pH 3 to 6. That is, if the pH is 3 or less, the particles agglomerate to hinder the uniform dispersion of the filler, and if the pH is 6 or more, the hydrolysis reaction is delayed, which is not practical. Further, according to this method, since the constituent materials are mixed in the solution, the blending amount of the filler can be increased without increasing the viscosity, and the inorganic filler is blended in an amount of 90 parts by weight or more of the resin component. It is possible.
【0007】本発明に用いられるエポキシ樹脂の例は、
現在半導体封止用成形材料として一般に用いられている
ビフェニル型エポキシ樹脂,クレゾールノボラック型エ
ポキシ樹脂,フェノールノボラック型エポキシ樹脂,ビ
スフェノールA型エポキシ樹脂などであり、硬化剤はフ
ェノールノボラックやクレゾールノボラックなどの水酸
基を有するノボラック樹脂,無水ピロメリット酸,無水
ベンゾフェノンなどの酸無水物およびアミン化合物を用
い、更に必要に応じて硬化促進剤としてトリフェニルフ
ォスフィン,イミダゾール等を配合する。Examples of the epoxy resin used in the present invention are:
Biphenyl type epoxy resin, cresol novolac type epoxy resin, phenol novolac type epoxy resin, bisphenol A type epoxy resin, etc. which are commonly used as molding materials for semiconductor encapsulation at present are used as a curing agent. A novolac resin having an acid, an acid anhydride such as pyromellitic dianhydride, benzophenone anhydride, and an amine compound are used, and if necessary, triphenylphosphine, imidazole or the like is added as a curing accelerator.
【0008】また、本発明に用いられるアルコキシシラ
ンは、一般式R1 mSi(OR2)n(mは0または1、nは
4−m)で示され、R1 は炭素数が1〜6の飽和あるい
は不飽和のアルキル基、又はアミノ基,エポキシ基又は
ビニル基を少なくとも1個有する1価の有機基、R2 は
炭素数1〜6のアルキル基である。このようなアルコキ
シシランはテトラメトキシシラン,テトラエトキシシラ
ン,メチルトリメトキシシラン,メチルトリエトキシシ
ラン,メチルトリプロポキシシラン,エチルトリメトキ
シシラン,γ−アミノプロピルトリメトキシシラン,γ
−アミノプロピルトリエトキシシラン,γ−グリシドキ
シプロピルトリエトキシシラン,γ−グリシドキシプロ
ピルトリメトキシシラン,ビニルトリエトキシシランな
どがあげられる。この中でも特にエポキシ基を有するγ
−グリシドキシプロピルトリエトキシシラン,γ−グリ
シドキシプロピルトリメトキシシラン等を用いて製造さ
れた樹脂組成物は、得られる硬化物が透明で可とう性に
優れている。これはアルコキシシランの分子中にエポキ
シ基が存在するために、充填剤とエポキシ樹脂の相溶性
が向上し、充填剤が非常に微細な球状粒子となって分散
することによると推察される。The alkoxysilane used in the present invention is represented by the general formula R 1 m Si (OR 2 ) n (m is 0 or 1, and n is 4-m), and R 1 has 1 to 10 carbon atoms. 6 is a saturated or unsaturated alkyl group, or a monovalent organic group having at least one amino group, epoxy group or vinyl group, and R 2 is an alkyl group having 1 to 6 carbon atoms. Such alkoxysilanes include tetramethoxysilane, tetraethoxysilane, methyltrimethoxysilane, methyltriethoxysilane, methyltripropoxysilane, ethyltrimethoxysilane, γ-aminopropyltrimethoxysilane, γ.
-Aminopropyltriethoxysilane, γ-glycidoxypropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, vinyltriethoxysilane and the like can be mentioned. Among these, especially γ having an epoxy group
-The resin composition produced by using glycidoxypropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane or the like has a cured product that is transparent and has excellent flexibility. It is presumed that this is because the epoxy group is present in the molecule of the alkoxysilane, so that the compatibility between the filler and the epoxy resin is improved and the filler is dispersed as very fine spherical particles.
【0009】さらにこの方法によって得た樹脂組成物の
貯蔵弾性率は、充填剤無添加のエポキシ樹脂と同等かそ
れ以下であるために、半導体装置における熱応力に対す
る大幅な低減効果が達成できる。Further, since the storage elastic modulus of the resin composition obtained by this method is equal to or lower than that of the epoxy resin with no filler added, a great reduction effect on the thermal stress in the semiconductor device can be achieved.
【0010】[0010]
【作用】このように、本発明による樹脂組成物の製造方
法によって得られた硬化物が低弾性且つ低熱膨張性を示
す詳細な発現機構は、現時点では明らかにされていな
い。推定理由の一つは、低熱膨張化のための充填剤導入
法としてエポキシ樹脂と相溶性に優れた有機化合物であ
るアルコキシシランを用いることにより、得られる硬化
物における充填剤がエポキシマトリックスと強い相互作
用を示し、且つ微粒子で均一に分散するため硬化物のバ
ルクの弾性率としては島構造の充填剤部分の影響が少な
く、エポキシマトリックスの特性が顕著に現れたためと
考えられる。この現象に関する今後の原因究明が重要で
ある。As described above, the detailed expression mechanism in which the cured product obtained by the method for producing a resin composition according to the present invention exhibits low elasticity and low thermal expansion has not been clarified at present. One of the presumed reasons is that by using an alkoxysilane, which is an organic compound excellent in compatibility with an epoxy resin, as a filler introduction method for achieving low thermal expansion, the filler in the resulting cured product has a strong interaction with the epoxy matrix. It is considered that this is because the effect is exerted and the fine particles are uniformly dispersed, so that the bulk modulus of the cured product is less affected by the filler portion having an island structure, and the characteristics of the epoxy matrix are remarkably exhibited. It is important to investigate the cause of this phenomenon in the future.
【0011】[0011]
【実施例】以下、本発明を実施例により具体的に説明す
る。EXAMPLES The present invention will be specifically described below with reference to examples.
【0012】(実施例1)300mlのビーカー中でビ
フェニル型エポキシ樹脂YX4000(油化シェル社製
品名)13g,フェノールノボラック樹脂7g(明和化
成社製品名)およびトリフェニルフォスフィン0.2g
をアセトン100gに溶解後、メチルトリエトキシシラ
ン34.3gを加えた。この樹脂溶液にpH5.0の水1
69gを滴下し、室温で3時間撹拌を続けてエポキシ樹
脂溶液中でアルコキシシランの加水分解を行った。溶媒
及び過剰の水を真空乾燥により除去し乳白色の樹脂粉末
を得た。得られた樹脂粉末を130℃の熱板上で溶融、
続いて1×107N/m2の加圧下、200℃で2時間加
熱硬化し、SiO2 含有量70ppm 重量部の白色不透明
な樹脂板を得た。得られた樹脂硬化物の破断面を走査型
電子顕微鏡写真で観察したところ、粒径1〜10μmの
SiO2 粒子が均一に分散しており、樹脂板の室温での
弾性率は240kgf/mm2 であった。(Example 1) 13 g of biphenyl type epoxy resin YX4000 (product name of Yuka Shell Co., Ltd.), 7 g of phenol novolac resin (product name of Meiwa Kasei Co., Ltd.) and 0.2 g of triphenylphosphine in a 300 ml beaker.
Was dissolved in 100 g of acetone, and 34.3 g of methyltriethoxysilane was added. Add 1 pH of water to this resin solution.
69 g was added dropwise, and stirring was continued at room temperature for 3 hours to hydrolyze the alkoxysilane in the epoxy resin solution. The solvent and excess water were removed by vacuum drying to obtain a milky white resin powder. The obtained resin powder is melted on a hot plate at 130 ° C,
Subsequently, it was heated and cured at 200 ° C. for 2 hours under a pressure of 1 × 10 7 N / m 2 to obtain a white opaque resin plate having a SiO 2 content of 70 ppm by weight. When the fracture surface of the obtained resin cured product is observed by a scanning electron microscope photograph, SiO 2 particles having a particle diameter of 1 to 10 μm are uniformly dispersed, and the elastic modulus of the resin plate at room temperature is 240 kgf / mm 2 Met.
【0013】(実施例2〜7)アルコキシシランの種類
並びに量を変化させた以外は、実施例1と同様にして、
樹脂硬化物を得た。これら用いたアルコキシシランの種
類,添加量並びに得られた硬化物の諸特性を表1に示し
た。(Examples 2 to 7) In the same manner as in Example 1 except that the kind and amount of alkoxysilane were changed.
A resin cured product was obtained. Table 1 shows the kinds and addition amounts of the alkoxysilanes used and various properties of the obtained cured products.
【0014】[0014]
【表1】 [Table 1]
【0015】(比較例1)実施例1と同様のビフェニル
型エポキシ樹脂13g,フェノールノボラック樹脂7g
およびトリフェニルフォスフィン0.2g 混合溶融後粉
砕した樹脂粉末を、1×107N/m2の加圧下、200
℃で2時間加熱硬化し透明な樹脂板を得た。この樹脂板
の室温での弾性率は250kgf/mm2 であった。Comparative Example 1 13 g of the same biphenyl type epoxy resin as in Example 1 and 7 g of phenol novolac resin
And triphenylphosphine (0.2 g) were mixed and melted, and the pulverized resin powder was compressed to 200 at a pressure of 1 × 10 7 N / m 2.
A transparent resin plate was obtained by heating and curing at 2 ° C for 2 hours. The elastic modulus of this resin plate at room temperature was 250 kgf / mm 2 .
【0016】(比較例2)ビフェニル型エポキシ樹脂2
60g,フェノールノボラック樹脂140g,トリフェ
ニルフォスフィン4gに溶融シリカを70重量部加え8
0℃で15分間ミキシングロールで混練した後射出成形
により成形した。この硬化物の弾性率は2000kgf/
mm2 であった。(Comparative Example 2) Biphenyl type epoxy resin 2
To 60 g, 140 g of phenol novolac resin, and 4 g of triphenylphosphine, add 70 parts by weight of fused silica to 8
The mixture was kneaded with a mixing roll at 0 ° C. for 15 minutes and then molded by injection molding. The elastic modulus of this cured product is 2000 kgf /
It was mm 2 .
【0017】[0017]
【発明の効果】本発明によれば、樹領溶液中で無機質粒
子が形成されるため、無機質充填剤は高充填であっても
容易に均一分散し、充填剤遍在による内部応力の不均一
を防止できる。充填剤の粒径は、加水分解時に添加され
る水の酸性度をpH3〜6に調整することで10μm以
下にコントロール可能である。また、この方法による
と、構成材料の混合が沈殿物の生じない均一な溶液中で
行われるために、充填剤配合時の粘度上昇を防止でき
る。したがって無機質充填剤を樹脂分の90重量部以上
配合することが可能である。さらに得られた樹脂組成物
の弾性率は、充填剤無添加のエポキシ樹脂と同等かそれ
以下であるために、本発明によって得られたエポキシ樹
脂組成物を封止材料に用いることで、熱応力を大幅に低
減した信頼性に優れた半導体装置を得ることができる。EFFECTS OF THE INVENTION According to the present invention, since inorganic particles are formed in a dendritic solution, the inorganic filler is easily and uniformly dispersed even if it is highly filled, and the internal stress is uneven due to the uneven distribution of the filler. Can be prevented. The particle size of the filler can be controlled to 10 μm or less by adjusting the acidity of water added during hydrolysis to pH 3 to 6. Further, according to this method, since the constituent materials are mixed in a uniform solution in which a precipitate does not occur, it is possible to prevent an increase in viscosity at the time of blending the filler. Therefore, it is possible to mix 90 parts by weight or more of the inorganic filler with the resin component. Further, since the elastic modulus of the obtained resin composition is equal to or lower than that of the epoxy resin without a filler, by using the epoxy resin composition obtained by the present invention as a sealing material, thermal stress can be reduced. It is possible to obtain a highly reliable semiconductor device in which
───────────────────────────────────────────────────── フロントページの続き (72)発明者 瀬川 正則 茨城県日立市大みか町七丁目1番1号 株 式会社日立製作所日立研究所内 (72)発明者 荻野 雅彦 茨城県日立市大みか町七丁目1番1号 株 式会社日立製作所日立研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Masanori Segawa, 7-1, 1-1 Omika-cho, Hitachi-shi, Ibaraki Hitachi Ltd. Hitachi Research Laboratory (72) Inventor Masahiko Ogino 7, 1-chome, Omika-cho, Hitachi-shi, Ibaraki No. 1 Hitachi Ltd. Hitachi Research Laboratory
Claims (7)
ルコキシシラン及びpH3〜6の水を添加し、アルコキ
シシランのアルコキシ基をシラノール基に酸触媒存在下
で加水分解した後溶媒除去し、その後の加熱処理により
得られた粒子を充填することを特徴とするエポキシ樹脂
組成物の製造方法。1. An alkoxysilane and water having a pH of 3 to 6 are added to an epoxy resin dissolved in an organic solvent, the alkoxy group of the alkoxysilane is hydrolyzed to a silanol group in the presence of an acid catalyst, and then the solvent is removed. A method for producing an epoxy resin composition, which comprises filling the particles obtained by the heat treatment of 1.
オルガノトリアルコキシシラン又はオルガノテトラアル
コキシシランであるエポキシ樹脂組成物の製造方法。2. A method for producing an epoxy resin composition, wherein the alkoxysilane according to claim 1 is an organotrialkoxysilane or an organotetraalkoxysilane.
た粒子が粒径10μm以下のSiO2粒子であるエポキシ
樹脂組成物の製造方法。3. A method for producing an epoxy resin composition, wherein the particles obtained by the method according to claim 1 are SiO 2 particles having a particle size of 10 μm or less.
た、樹脂が透明性を有するエポキシ樹脂組成物の製造方
法。4. A method for producing an epoxy resin composition, wherein the resin has transparency, which is obtained by the method according to claim 1.
た、粒子含有量が50重量部以上である樹脂硬化物で、
室温での貯蔵弾性率が1000kgf/mm2 以下、且つ熱
膨張率が50ppm/K 以下であるエポキシ樹脂組成物の
製造方法。5. A resin cured product having a particle content of 50 parts by weight or more, which is obtained by the production method according to claim 1.
A method for producing an epoxy resin composition having a storage elastic modulus at room temperature of 1000 kgf / mm 2 or less and a thermal expansion coefficient of 50 ppm / K or less.
り封止されている半導体装置。6. A semiconductor device encapsulated with the epoxy resin composition according to claim 1.
り封止されている半導体装置を用いた電子機器。7. An electronic device using a semiconductor device encapsulated with the epoxy resin composition according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP792095A JPH08199045A (en) | 1995-01-23 | 1995-01-23 | Method for producing epoxy resin composition and semiconductor device using the resin composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP792095A JPH08199045A (en) | 1995-01-23 | 1995-01-23 | Method for producing epoxy resin composition and semiconductor device using the resin composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08199045A true JPH08199045A (en) | 1996-08-06 |
Family
ID=11678971
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP792095A Pending JPH08199045A (en) | 1995-01-23 | 1995-01-23 | Method for producing epoxy resin composition and semiconductor device using the resin composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08199045A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6225418B1 (en) * | 1998-10-06 | 2001-05-01 | Hitachi, Ltd. | Thermosetting resin composition |
| WO2001055243A1 (en) * | 2000-01-28 | 2001-08-02 | Hitachi, Ltd. | Solvent-free thermosetting resin composition, process for producing the same, and product therefrom |
| KR100430196B1 (en) * | 1998-12-16 | 2004-09-18 | 제일모직주식회사 | Epoxy Resin Compositions for Semiconductor Device Sealing |
| US6943058B2 (en) | 2003-03-18 | 2005-09-13 | Delphi Technologies, Inc. | No-flow underfill process and material therefor |
| JP2006219601A (en) * | 2005-02-10 | 2006-08-24 | Hitachi Chem Co Ltd | Liquid epoxy resin composition for sealing |
| US7723407B2 (en) | 2004-08-06 | 2010-05-25 | Nippon Shokubai Co., Ltd. | Resin composition, method of its composition, and cured formulation |
-
1995
- 1995-01-23 JP JP792095A patent/JPH08199045A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6225418B1 (en) * | 1998-10-06 | 2001-05-01 | Hitachi, Ltd. | Thermosetting resin composition |
| US6762511B2 (en) | 1998-10-06 | 2004-07-13 | Hitachi, Ltd. | Thermosetting resin composition |
| US7112634B2 (en) | 1998-10-06 | 2006-09-26 | Hitachi, Ltd. | Thermosetting resin composition |
| KR100430196B1 (en) * | 1998-12-16 | 2004-09-18 | 제일모직주식회사 | Epoxy Resin Compositions for Semiconductor Device Sealing |
| WO2001055243A1 (en) * | 2000-01-28 | 2001-08-02 | Hitachi, Ltd. | Solvent-free thermosetting resin composition, process for producing the same, and product therefrom |
| US6821657B1 (en) | 2000-01-28 | 2004-11-23 | Hitachi, Ltd. | Solvent-free thermosetting resin composition, process for producing the same, and product therefrom |
| US6946198B2 (en) | 2000-01-28 | 2005-09-20 | Hitachi, Ltd. | Solvent-free thermosetting resin composition, process for producing the same, and product therefrom |
| US6943058B2 (en) | 2003-03-18 | 2005-09-13 | Delphi Technologies, Inc. | No-flow underfill process and material therefor |
| US7723407B2 (en) | 2004-08-06 | 2010-05-25 | Nippon Shokubai Co., Ltd. | Resin composition, method of its composition, and cured formulation |
| JP2006219601A (en) * | 2005-02-10 | 2006-08-24 | Hitachi Chem Co Ltd | Liquid epoxy resin composition for sealing |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3469446B2 (en) | Resin composition and method of manufacturing resin-encapsulated semiconductor device using the same | |
| JP2874089B2 (en) | Resin composition for semiconductor encapsulation and semiconductor device | |
| JPH11310688A (en) | Epoxy resin composition for semiconductor encapsulation and semiconductor device | |
| JP2000034393A (en) | Epoxy resin composition for semiconductor encapsulation and semiconductor device | |
| JPS6274924A (en) | Epoxy resin composition for sealing semiconductor device | |
| JPH10101906A (en) | Method for producing liquid epoxy resin composition | |
| JPH0284458A (en) | Rubber modified phenol resin, epoxy resin composition and semiconductor device sealed with the composition | |
| JPH08199045A (en) | Method for producing epoxy resin composition and semiconductor device using the resin composition | |
| JP6950299B2 (en) | Resin composition for encapsulant and electronic device using it | |
| JP2000299414A (en) | Flip chip type semiconductor device | |
| JPS62236821A (en) | Epoxy resin composition | |
| JP2000281751A (en) | Epoxy resin composition and semiconductor device | |
| JPH04275325A (en) | Resin composition for semiconductor encapsulation | |
| JP2024073100A (en) | Resin composition for semiconductor sealing and method for producing the same | |
| JPH08337680A (en) | Thermosetting resin and semiconductor device using the resin | |
| EP4410890A1 (en) | Epoxy resin composition for molding | |
| JP3200251B2 (en) | Semiconductor device and epoxy resin composition used therefor | |
| JPH07107091B2 (en) | Epoxy resin composition for semiconductor encapsulation | |
| JPH0310664B2 (en) | ||
| JPH03115455A (en) | Sealing resin composition and resin-sealed semiconductor device | |
| JPH0811778B2 (en) | Epoxy resin molding material for semiconductor encapsulation | |
| JP2579338B2 (en) | Semiconductor device | |
| JP2005336329A (en) | Surface-treated inorganic filler, epoxy resin composition for semiconductor encapsulation, and semiconductor device | |
| JPH07316459A (en) | Method for producing surface-treated alumina | |
| KR100480946B1 (en) | Epoxy molding compound having improved crack resistance and heat conductivity for use as semiconductor encapsulant |