JPH0762547A - Electroless nickel plating film preparation method - Google Patents
Electroless nickel plating film preparation methodInfo
- Publication number
- JPH0762547A JPH0762547A JP5209687A JP20968793A JPH0762547A JP H0762547 A JPH0762547 A JP H0762547A JP 5209687 A JP5209687 A JP 5209687A JP 20968793 A JP20968793 A JP 20968793A JP H0762547 A JPH0762547 A JP H0762547A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electroless nickel
- nickel
- nickel plating
- electroless
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 title claims abstract description 96
- 229910052759 nickel Inorganic materials 0.000 title claims abstract description 48
- 238000007747 plating Methods 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title 1
- 239000000919 ceramic Substances 0.000 claims abstract description 40
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000007772 electroless plating Methods 0.000 claims abstract description 4
- 238000007788 roughening Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 14
- 239000003054 catalyst Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000005238 degreasing Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 238000007598 dipping method Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 14
- 239000000853 adhesive Substances 0.000 abstract 2
- 230000001070 adhesive effect Effects 0.000 abstract 2
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 12
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 7
- 239000007788 liquid Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 150000002940 palladium Chemical class 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
Landscapes
- Chemically Coating (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、セラミックス上の電極
などを作成するための、無電解ニッケルめっき膜作製法
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing an electroless nickel plating film for producing electrodes on ceramics.
【０００２】[0002]
【従来の技術】従来、圧電セラミックス上に無電解ニッ
ケルめっき法により電極膜を形成する場合には、図３に
示すように、まずPbZrO3（ジルコン酸鉛）-PbTiO3（チ
タン酸鉛）系のセラミックス基板１０を６０℃に加熱し
たアルカリ性の脱脂液に浸漬して基板表面の汚れを除去
するアルカリ脱脂工程１１後、表面にパラジウムを吸着
させて触媒を付与する触媒付与工程１２を行ない、それ
から無電解ニッケルめっき浴１３に浸漬してニッケル膜
を析出堆積させていた。2. Description of the Related Art Conventionally, when an electrode film is formed on a piezoelectric ceramic by an electroless nickel plating method, as shown in FIG. 3, first, a PbZrO 3 (lead zirconate) -PbTiO 3 (lead titanate) system is used. After the alkaline degreasing step 11 for immersing the ceramics substrate 10 in 60 ° C. in an alkaline degreasing liquid to remove dirt on the surface of the substrate, a catalyst applying step 12 for adsorbing palladium on the surface to apply a catalyst is carried out, and then It was immersed in the electroless nickel plating bath 13 to deposit and deposit a nickel film.
【０００３】また、セラミックス基板１０と無電解ニッ
ケル膜の密着性が必要となる場合には、図４に示すよう
に、触媒付与工程１２の前に基板粗化のための塩酸また
はフッ酸によるエッチング工程１４を加えるか、図５に
示すように、無電解ニッケル膜堆積後に熱処理を施すと
いった熱処理工程１５が更に行われていた。When adhesion between the ceramic substrate 10 and the electroless nickel film is required, as shown in FIG. 4, etching with hydrochloric acid or hydrofluoric acid for roughening the substrate is performed before the catalyst application step 12, as shown in FIG. In addition to the step 14, a heat treatment step 15 of performing a heat treatment after depositing the electroless nickel film has been further performed as shown in FIG.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、従来の
方法では、PbZrTiO系セラミックス基板と膜の十分な密
着性は得られず、例えば図３に示す工程により作成した
膜の密着強度を、表面に円柱状の治具を半田付けし、そ
の治具を引っ張り試験機により引っ張って、ニッケル膜
がセラミックス基板より引き剥された時の張力を治具の
接着面積で割り単位面積あたりの密着強度を求める引き
剥し法で評価したときの値は、３０kg/cm2程度と非常に
低い値であった。また、図４に示す方法では、脱脂工程
の後に基板粗化として３６％、５０℃の塩酸で１分エッ
チングを行なった後に形成した膜についても密着強度
は、７５kg/cm2程度であり、更に、図５に示す方法で
は、無電解ニッケル膜堆積後に大気中にて２５０℃で３
０分加熱した膜について密着強度を測定しても、５０kg
/cm2程度しか得られなかった。However, in the conventional method, sufficient adhesion between the PbZrTiO 3 ceramic substrate and the film cannot be obtained. For example, the adhesion strength of the film formed by the process shown in FIG. Solder a columnar jig, pull the jig with a tensile tester, and divide the tension when the nickel film is peeled from the ceramic substrate by the adhesion area of the jig to obtain the adhesion strength per unit area. The value when evaluated by the peeling method was a very low value of about 30 kg / cm 2 . Further, in the method shown in FIG. 4, the adhesion strength is about 75 kg / cm 2 for the film formed after the degreasing step and the substrate is roughened with 36% and is etched with hydrochloric acid at 50 ° C. for 1 minute. According to the method shown in FIG. 5, after depositing the electroless nickel film, the temperature is set to 3 at 250 ° C. in the atmosphere.
Even if the adhesion strength of the film heated for 0 minutes is measured, it is 50 kg.
Only about / cm 2 was obtained.
【０００５】本発明は、上述した問題点を解決するため
になされたものであり、セラミックス基板に対して密着
強度の高い無電解ニッケルめっき膜作製法を提供するこ
とを目的としている。The present invention has been made to solve the above-mentioned problems, and an object thereof is to provide a method for producing an electroless nickel plating film having high adhesion strength to a ceramic substrate.
【０００６】[0006]
【課題を解決するための手段】この目的を達成するため
に本発明の無電解ニッケルめっき膜作製法は、セラミッ
クスの表面を脱脂する脱脂工程と、触媒を付与する触媒
付与工程と、無電解めっき反応によりニッケル膜を析出
させる無電解ニッケルめっき工程とから成るセラミック
ス上にニッケル膜を形成するための無電解ニッケルめっ
き膜作製法であって、前記セラミックスを塩酸に浸漬し
て基板粗化を行う基板粗化工程と、前記ニッケル膜を熱
処理する熱処理工程とを更に有することを特徴とする。To achieve this object, an electroless nickel plating film production method of the present invention comprises a degreasing step of degreasing the surface of ceramics, a catalyst applying step of applying a catalyst, and an electroless plating step. A method for producing an electroless nickel plating film for forming a nickel film on a ceramic, comprising: an electroless nickel plating step of depositing a nickel film by a reaction, wherein the ceramic is immersed in hydrochloric acid to roughen the substrate. The method further comprises a roughening step and a heat treatment step of heat treating the nickel film.
【０００７】なお、前記セラミックスは、鉛、ジルコニ
ウム、チタンを主成分とした圧電セラミックスであって
もよく、また、前記塩酸は加熱され室温より高い液温を
有していても良い。The ceramics may be piezoelectric ceramics containing lead, zirconium and titanium as main components, and the hydrochloric acid may be heated and have a liquid temperature higher than room temperature.
【０００８】[0008]
【作用】上記の構成を有する本発明の無電解ニッケルめ
っき膜作製法によれば、脱脂工程においてセラミックス
表面の汚れを除去した後、塩酸によりセラミックス表面
が粗化され、次に、触媒が付与された後、その上にニッ
ケルが無電解めっき反応により析出され、その後、ニッ
ケル膜に熱処理が加えられる。According to the method for producing an electroless nickel plating film of the present invention having the above-mentioned structure, after removing stains on the ceramic surface in the degreasing step, the ceramic surface is roughened with hydrochloric acid, and then a catalyst is applied. After that, nickel is deposited thereon by an electroless plating reaction, and then a heat treatment is applied to the nickel film.
【０００９】[0009]
【実施例】以下、本発明を具体化した一実施例を図面を
参照して説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
【００１０】まず、図１を参照して本発明の無電解ニッ
ケルめっき膜作製法を用いて作製したニッケルめっき電
極膜を備える圧電セラミックスの構成を説明すると、Pb
ZrO3（ジルコン酸鉛）-PbTiO3（チタン酸鉛）系のセラ
ミックス基板１は、PbZrO3及びPbTiO3の粒子よりなり、
表面付近の粒界は、塩酸前処理によるエッチングで数百
〜数千オングストロームのエッチング痕２が生じてい
る。前記基板１上に形成されたニッケル−リン膜３は、
そのエッチング痕２にも浸入しており、１μmの厚さま
で堆積されている。First, referring to FIG. 1, the structure of a piezoelectric ceramic having a nickel-plated electrode film produced by the electroless nickel-plated film production method of the present invention will be described.
The ZrO 3 (lead zirconate) -PbTiO 3 (lead titanate) -based ceramic substrate 1 is composed of particles of PbZrO 3 and PbTiO 3 ,
At the grain boundaries near the surface, etching marks 2 of several hundred to several thousand angstroms are generated by the etching by the hydrochloric acid pretreatment. The nickel-phosphorus film 3 formed on the substrate 1 is
It also penetrates into the etching mark 2 and is deposited up to a thickness of 1 μm.
【００１１】次に、図２を参照して本実施例の無電解ニ
ッケルめっき膜作製法の詳細を説明する。Next, referring to FIG. 2, details of the method for producing the electroless nickel plating film of this embodiment will be described.
【００１２】最初に、PbZrO3-PbTiO3系のセラミックス
基板１は、アルカリ脱脂工程４において、恒温槽で液温
が５０℃に保持されたアルカリ脱脂液に５分間浸漬され
て表面の汚れが除去される。次に純水にて洗浄されたの
ち、塩酸エッチング工程５で、液温が５０℃に保持され
た濃度３６％の塩酸に１分間浸漬される。それにより、
セラミックス基板１の表面は、塩酸によってエッチング
され、PbZrO3とPbTiO3粒子の粒界にエッチング痕２が形
成されて基板粗化が行われる。次に純水にて再び洗浄さ
れた後、純水により超音波洗浄６が１分間施され、セラ
ミックス表面及びエッチング痕２から塩酸が完全に除去
される。First, in the alkaline degreasing step 4, the PbZrO 3 -PbTiO 3 -based ceramic substrate 1 is immersed in an alkaline degreasing liquid whose liquid temperature is kept at 50 ° C. for 5 minutes to remove surface stains. To be done. Then, after being washed with pure water, in a hydrochloric acid etching step 5, it is immersed in hydrochloric acid having a concentration of 36% and kept at a liquid temperature of 50 ° C. for 1 minute. Thereby,
The surface of the ceramic substrate 1 is etched with hydrochloric acid to form etching marks 2 at the grain boundaries of the PbZrO 3 and PbTiO 3 particles to roughen the substrate. Then, after being washed again with pure water, ultrasonic cleaning 6 is performed with pure water for 1 minute to completely remove hydrochloric acid from the ceramic surface and the etching marks 2.
【００１３】次に、触媒付与工程７においては、塩化ス
ズを含む浴と塩化パラジウムを含む浴に交互に浸漬され
て、セラミックス基板表面に、パラジウムの粒子が吸着
される。このパラジウムは、無電解ニッケルめっき反応
の触媒として働くもので、これによってセラミックス基
板１上に無電解ニッケルのめっきが可能となる。無電解
ニッケル工程８では、次亜リン酸を還元剤として含む無
電解ニッケル−リンめっき浴が９０℃に加熱されてお
り、ここに触媒付与されたセラミックス基板１が浸漬さ
れると、基板１上にニッケル−リンが析出される。触媒
であるパラジウム粒子は、塩酸エッチング工程５によっ
て形成されたエッチング痕２にも侵入しているため、無
電解ニッケル−リンは、エッチング痕２内部においても
析出し、セラミックス基板１とニッケル−リン膜３の実
質的な接触面積を増大させると共に、アンカー効果も生
じさせる。Next, in the catalyst applying step 7, the particles of palladium are adsorbed on the surface of the ceramic substrate by alternately immersing in a bath containing tin chloride and a bath containing palladium chloride. This palladium acts as a catalyst for the electroless nickel plating reaction, which allows the electroless nickel plating on the ceramic substrate 1. In the electroless nickel step 8, an electroless nickel-phosphorus plating bath containing hypophosphorous acid as a reducing agent is heated to 90 ° C., and when the ceramics substrate 1 to which the catalyst is added is immersed therein, Nickel-phosphorus is deposited on. Since the palladium particles as the catalyst have also penetrated into the etching traces 2 formed in the hydrochloric acid etching step 5, electroless nickel-phosphorus is also deposited inside the etching traces 2 and the ceramic substrate 1 and the nickel-phosphorus film are formed. It increases the substantial contact area of 3 and also causes an anchor effect.
【００１４】膜厚１μmまでニッケル−リン膜３が堆積
させられたセラミックス基板１は、十分に水洗されエア
ーブローにて乾燥されたのち、２５０℃に温調された電
気炉に投入され、その状態で３０分間保持されて熱処理
９が施される。この熱処理９によりニッケル−リン膜３
の結晶化度が向上すると共に、膜３中に取り込まれてい
た水分子が脱離し、膜３の硬度及びセラミックス基板１
とニッケル−リン膜３界面での密着性が向上する。この
ように、塩酸による基板粗化を行ってエッチング痕２に
ニッケル−リン膜３を侵入させ、さらに熱処理９を施し
て侵入したニッケル−リン膜３の硬度を増すことによ
り、界面の機械的強度を増加させるため、ニッケル−リ
ン膜３の密着性を向上させることができる。The ceramic substrate 1 on which the nickel-phosphorus film 3 is deposited to a film thickness of 1 μm is thoroughly washed with water, dried by air blow, and then placed in an electric furnace whose temperature is controlled at 250 ° C., in that state. And the heat treatment 9 is performed for 30 minutes. By this heat treatment 9, the nickel-phosphorus film 3
The crystallinity of the film is improved, water molecules taken in the film 3 are desorbed, and the hardness of the film 3 and the ceramic substrate 1
And the adhesion at the nickel-phosphorus film 3 interface is improved. As described above, the substrate is roughened with hydrochloric acid to allow the nickel-phosphorus film 3 to enter the etching traces 2, and the heat treatment 9 is performed to increase the hardness of the invaded nickel-phosphorus film 3, thereby increasing the mechanical strength of the interface. Therefore, the adhesion of the nickel-phosphorus film 3 can be improved.
【００１５】得られた膜の密着強度を引き剥し法で評価
した結果を表１に示す。Table 1 shows the results of evaluation of the adhesion strength of the obtained film by the peeling method.
【００１６】[0016]
【表１】 [Table 1]
【００１７】このように、本実施例の方法でセラミック
ス基板１上に形成されたニッケル−リン膜３は、約１０
０ｋｇ／ｃｍ2の高い密着強度が得られていることがわ
かる。密着強度の高い膜は、電極としての信頼性を高め
ることができるため、本実施例の無電解ニッケルめっき
膜作製法によりセラミックス上に信頼性に優れた電極膜
を得ることができる。As described above, the nickel-phosphorus film 3 formed on the ceramic substrate 1 by the method of this embodiment has about 10
It can be seen that a high adhesion strength of 0 kg / cm 2 is obtained. Since a film having high adhesion strength can enhance reliability as an electrode, an electrode film having excellent reliability can be obtained on ceramics by the electroless nickel plating film production method of this example.
【００１８】なお、上記実施例においては、塩酸エッチ
ング工程の塩酸濃度を３６％としているが、１５％から
４０％の間であれば良く、また、温度についても４０〜
８０℃の間であれば良く、処理時間は３０秒〜２分の間
であればよい。熱処理についても、上記実施例において
は２５０℃にて３０分としたが、１５０℃以上であれば
良く、時間も１５分以上であればよい。In the above embodiment, the hydrochloric acid concentration in the hydrochloric acid etching step is 36%, but it may be between 15% and 40%, and the temperature is 40 to 40%.
It may be between 80 ° C and the treatment time may be between 30 seconds and 2 minutes. Regarding the heat treatment as well, in the above embodiment, the temperature was 250 ° C. for 30 minutes, but it may be 150 ° C. or higher and the time may be 15 minutes or longer.
【００１９】[0019]
【発明の効果】以上説明したことから明かなように、本
発明の無電解ニッケルめっき膜作製法によれば、塩酸に
よりセラミックスの表面を粗化するとともに、析出した
ニッケル膜を熱処理することにより、粗化されたセラミ
ックスに侵入したニッケル膜の強度を増加させ、セラミ
ックスに対して密着強度の高い無電解ニッケル膜を得る
ことが出来る。As is apparent from the above description, according to the electroless nickel plating film producing method of the present invention, the surface of ceramics is roughened by hydrochloric acid, and the deposited nickel film is heat-treated. It is possible to increase the strength of the nickel film penetrating into the roughened ceramic and obtain an electroless nickel film having high adhesion strength to the ceramic.
【図１】図１は本発明の無電解ニッケルめっき膜作製法
により作成された電極の断面図である。FIG. 1 is a cross-sectional view of an electrode produced by an electroless nickel plating film producing method of the present invention.
【図２】図２は本発明の無電解ニッケルめっき膜作製法
の工程を順に示す説明図である。FIG. 2 is an explanatory diagram sequentially showing steps of the electroless nickel plating film production method of the present invention.
【図３】図３は従来の無電解ニッケルめっき法の工程を
示す図である。FIG. 3 is a diagram showing steps of a conventional electroless nickel plating method.
【図４】図４は従来の無電解ニッケルめっき法の工程を
示す図である。FIG. 4 is a diagram showing steps of a conventional electroless nickel plating method.
【図５】図５は従来の無電解ニッケルめっき法の工程を
示す図である。FIG. 5 is a diagram showing steps of a conventional electroless nickel plating method.
１ セラミックス基板 ４ アルカリ脱脂工程 ５ 塩酸エッチング工程 ７ 触媒付与工程 ８ 無電解ニッケル工程 ９ 熱処理 1 Ceramics Substrate 4 Alkali Degreasing Step 5 Hydrochloric Acid Etching Step 7 Catalyst Applying Step 8 Electroless Nickel Step 9 Heat Treatment
Claims (3)
と、触媒を付与する触媒付与工程と、無電解めっき反応
によりニッケル膜を析出させる無電解ニッケルめっき工
程とから成るセラミックス上にニッケル膜を形成するた
めの無電解ニッケルめっき膜作製法において、 前記セラミックスを塩酸に浸漬して基板粗化を行う基板
粗化工程と、前記ニッケル膜を熱処理する熱処理工程と
を更に有することを特徴とする無電解ニッケルめっき膜
作製法。1. A nickel film is formed on ceramics comprising a degreasing step of degreasing the surface of the ceramics, a catalyst applying step of applying a catalyst, and an electroless nickel plating step of depositing a nickel film by an electroless plating reaction. In the method for producing an electroless nickel plating film for electroless nickel plating, the method further comprises a substrate roughening step of dipping the ceramics in hydrochloric acid to roughen the substrate, and a heat treatment step of heat treating the nickel film. Plated film manufacturing method.
ム、チタンを主成分とした圧電セラミックスであること
を特徴とする請求項１に記載の無電解ニッケルめっき膜
作製法。2. The method for producing an electroless nickel plated film according to claim 1, wherein the ceramic is a piezoelectric ceramic containing lead, zirconium, and titanium as main components.
する請求項１に記載の無電解ニッケルめっき膜作製法。3. The method for producing an electroless nickel plating film according to claim 1, wherein the hydrochloric acid is heated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5209687A JPH0762547A (en) | 1993-08-24 | 1993-08-24 | Electroless nickel plating film preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5209687A JPH0762547A (en) | 1993-08-24 | 1993-08-24 | Electroless nickel plating film preparation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0762547A true JPH0762547A (en) | 1995-03-07 |
Family
ID=16576967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5209687A Pending JPH0762547A (en) | 1993-08-24 | 1993-08-24 | Electroless nickel plating film preparation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0762547A (en) |
-
1993
- 1993-08-24 JP JP5209687A patent/JPH0762547A/en active Pending
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