JPH0737797A - Treatment device - Google Patents
Treatment deviceInfo
- Publication number
- JPH0737797A JPH0737797A JP19910693A JP19910693A JPH0737797A JP H0737797 A JPH0737797 A JP H0737797A JP 19910693 A JP19910693 A JP 19910693A JP 19910693 A JP19910693 A JP 19910693A JP H0737797 A JPH0737797 A JP H0737797A
- Authority
- JP
- Japan
- Prior art keywords
- nozzle
- processing
- wafer
- supply nozzle
- liquid supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007788 liquid Substances 0.000 claims description 71
- 239000004065 semiconductor Substances 0.000 abstract description 24
- 238000011109 contamination Methods 0.000 abstract description 6
- 238000007599 discharging Methods 0.000 abstract description 2
- 230000007246 mechanism Effects 0.000 description 22
- 239000011248 coating agent Substances 0.000 description 12
- 238000000576 coating method Methods 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Landscapes
- Coating Apparatus (AREA)
- Nozzles (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、例えば半導体ウエハ
等の被処理体の表面に現像液等の処理液を供給する処理
装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing apparatus for supplying a processing liquid such as a developing liquid to the surface of an object to be processed such as a semiconductor wafer.
【０００２】[0002]
【従来の技術】一般に、半導体デバイスの製造工程にお
いて、被処理体である半導体ウエハの表面に処理液とし
ての現像液を塗布する場合、処理液供給ノズルから半導
体ウエハに向けて現像液を吐出させている。2. Description of the Related Art Generally, in the manufacturing process of semiconductor devices, when a developing solution as a processing solution is applied to the surface of a semiconductor wafer which is an object to be processed, the developing solution is discharged from a processing solution supply nozzle toward the semiconductor wafer. ing.
【０００３】すなわち、半導体ウエハを高速回転可能な
スピンチャックにて水平保持し、このスピンチャックの
上部に、半導体ウエハと対向するように処理液供給ノズ
ルを配設し、この処理液供給ノズルに列設された多数の
ノズル孔から半導体ウエハに向けて現像液をシャワー状
に吐出させて現像液を供給し、現像液を表面張力により
半導体ウエハ上に膜状に塗布している。That is, a semiconductor wafer is held horizontally by a spin chuck capable of high-speed rotation, a processing liquid supply nozzle is arranged above the spin chuck so as to face the semiconductor wafer, and the processing liquid supply nozzle is arranged in line. The developing solution is supplied in a shower shape from a large number of nozzle holes provided to the semiconductor wafer to supply the developing solution, and the developing solution is applied in a film form on the semiconductor wafer by surface tension.
【０００４】ところで、上記のように構成される処理液
供給ノズルのノズル孔からシャワー状に現像液を供給す
る構造のものにおいては、短時間で半導体ウエハ表面に
現像液を塗布するためには、現像液の供給圧を上げて現
像液の吐出流量を増加させる必要がある。そのため、現
像液が半導体ウエハの表面に衝撃を与え、半導体ウエハ
にダメージを与える虞れがあった。By the way, in the structure in which the developing solution is supplied in a shower shape from the nozzle hole of the processing solution supply nozzle configured as described above, in order to apply the developing solution to the surface of the semiconductor wafer in a short time, It is necessary to increase the supply pressure of the developing solution to increase the discharge flow rate of the developing solution. Therefore, there is a possibility that the developer may give a shock to the surface of the semiconductor wafer and damage the semiconductor wafer.
【０００５】そこで、出願人は、上記処理液供給ノズル
と半導体ウエハとを相対的に水平移動させることによっ
て、処理液供給ノズルにより現像液を押し広げて半導体
ウエハ表面に現像液を塗布する処理技術を既に開発した
（特開平５−１３３２０号公報（特願平３−９０８０
号）参照）。これにより、半導体ウエハに衝撃を与えた
り、気泡を発生させることなく、迅速に所定の現像液を
ウエハに塗布することができ、また、少量の現像液で効
率良く処理を行うことができる。Therefore, the applicant has proposed a processing technique in which the processing solution supply nozzle and the semiconductor wafer are relatively horizontally moved to spread the developing solution by the processing solution supply nozzle to apply the developing solution to the surface of the semiconductor wafer. Has already been developed (Japanese Patent Application Laid-Open No. 5-13320 (Japanese Patent Application No. 3-9080).
No.))). As a result, a predetermined developing solution can be rapidly applied to the wafer without giving an impact to the semiconductor wafer or generating bubbles, and the processing can be efficiently performed with a small amount of the developing solution.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、従来の
この種の処理装置においては、同一の孔径のノズル孔を
等間隔で列設するため、各ノズル孔から同一量の現像液
が吐出されることになる。塗布面積は半導体ウエハの中
心部に比較して外周部の塗布面積が広くなるので、外周
部の塗布面積に合せて現像液の吐出量を多くする必要が
ある。したがって、狭い塗布面積の中心部には必要以上
に多量の現像液が供給されるため、現像液の無駄が生じ
るばかりか、中心部に供給された現像液が盛り上って処
理液供給ノズルに付着して残留し、パーティクルの発生
原因となると共に、半導体ウエハの汚染を招くという可
能性があり、改善すべき点があった。However, in the conventional processing apparatus of this kind, since the nozzle holes having the same hole diameter are arranged at equal intervals, the same amount of the developing solution is discharged from each nozzle hole. become. Since the coating area of the outer peripheral portion is larger than that of the central portion of the semiconductor wafer, it is necessary to increase the discharge amount of the developing solution according to the coating area of the outer peripheral portion. Therefore, since a large amount of developer is supplied to the central part of the small coating area more than necessary, not only is the developer wasted, but the developer supplied to the central part rises to the processing liquid supply nozzle. There is a possibility that it may adhere and remain, which may cause generation of particles and may lead to contamination of the semiconductor wafer, and there is a point to be improved.
【０００７】この発明は上記事情に鑑みなされたもの
で、被処理体の表面に処理液を均一に供給し、被処理体
の汚染防止を図れるようにした処理装置を提供すること
を目的とするものである。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a processing apparatus capable of uniformly supplying a processing liquid to the surface of an object to be processed and preventing contamination of the object to be processed. It is a thing.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するため
に、この発明の処理装置は、被処理体を保持する保持手
段と、上記被処理体の表面に処理液を吐出する複数のノ
ズル孔を列設する処理液供給ノズルとを具備し、かつ上
記保持手段と処理液供給ノズルとを相対的に移動して処
理液を上記被処理体上に供給する処理装置を前提とし、
上記処理液供給ノズルのノズル孔列の中心部から外方に
向って上記ノズル孔の面積を漸次増大することを特徴と
するものである。To achieve the above object, the processing apparatus of the present invention comprises a holding means for holding an object to be processed, and a plurality of nozzle holes for ejecting a processing liquid onto the surface of the object. On the premise of a processing apparatus comprising a processing liquid supply nozzle in which the processing liquid supply nozzles are arranged in a row, and the processing means supplies the processing liquid onto the object to be processed by relatively moving the holding means and the processing liquid supply nozzle.
It is characterized in that the area of the nozzle hole is gradually increased outward from the center of the nozzle hole array of the treatment liquid supply nozzle.
【０００９】この発明において、上記処理液供給ノズル
のノズル孔は、ノズル孔列の中心部から外方に向って面
積が漸次増大するものであれば、その形態は任意でよ
く、例えば同一口径のノズル孔の配列ピッチを中心部か
ら外方に向って順次縮小させるようにしてもよく、ある
いは、同一ピッチのノズル孔の口径を漸次増大させるよ
うにしたもののいずれであってもよい。In the present invention, the nozzle holes of the treatment liquid supply nozzle may have any form as long as the area gradually increases from the central portion of the nozzle hole row to the outside, and for example, the nozzle holes of the same diameter can be used. The arrangement pitch of the nozzle holes may be gradually reduced outward from the central portion, or the diameter of the nozzle holes having the same pitch may be gradually increased.
【００１０】また、上記ノズル孔は先端側が先細り状の
テーパー面を有する凸条部に設ける方が好ましい。この
場合、凸条部の先端は平坦であっても差し支えないが、
好ましくはテーパー部の先端を円弧状に形成する方がよ
い。Further, it is preferable that the nozzle hole is provided in a ridge having a tapered surface on the tip side. In this case, the tip of the ridge may be flat,
It is preferable to form the tip of the tapered portion in an arc shape.
【００１１】[0011]
【作用】上記のように構成されるこの発明の処理装置に
よれば、ノズル孔列の中心部から外方に向ってノズル孔
の面積を漸次増大するため、被処理体の中心部には少量
の処理液を供給でき、外周部には多量の処理液を供給す
ることができる。したがって、被処理体の中心部から外
周部に亘り均一に処理液を供給することができ、処理均
一性の向上を図ることができる。According to the processing apparatus of the present invention configured as described above, since the area of the nozzle holes is gradually increased outward from the central portion of the nozzle hole array, a small amount is present in the central portion of the object to be processed. Can be supplied, and a large amount of the processing liquid can be supplied to the outer peripheral portion. Therefore, the treatment liquid can be uniformly supplied from the central portion to the outer peripheral portion of the object to be treated, and the treatment uniformity can be improved.
【００１２】また、処理液供給ノズルのノズル孔を、先
端側が先細り状のテーパー状に形成された凸条部に設け
ることにより、ノズル先端部に処理液の残留を少なくす
ることができ、処理液の付着によるパーティクルの発生
を抑制し、被処理体の汚染防止を図ることができる。こ
の場合、凸条部の先端を円弧状に形成することにより、
ノズル先端への処理液の残留の付着を更に抑制すること
ができる。Further, by providing the nozzle hole of the treatment liquid supply nozzle on the ridge having the tapered tip end side, it is possible to reduce the amount of treatment liquid remaining at the tip of the nozzle. It is possible to suppress the generation of particles due to the adherence of particles and prevent contamination of the object to be processed. In this case, by forming the tip of the ridge portion into an arc shape,
It is possible to further suppress the residual adhesion of the processing liquid to the tip of the nozzle.
【００１３】[0013]
【実施例】以下に、この発明の実施例を図面に基いて詳
細に説明する。この実施例はレジスト塗布現像装置に適
用したものである。Embodiments of the present invention will be described in detail below with reference to the drawings. This embodiment is applied to a resist coating / developing apparatus.
【００１４】図１に示すように、このレジスト塗布現像
装置は、被処理体例えば半導体ウエハＷ（以下、単にウ
エハという）に種々の処理を施す処理機構が配設された
処理機構ユニット１０と、処理機構ユニット１０にウエ
ハＷを自動的に搬入・搬出するための搬入・搬出機構１
とで主要部が構成されている。As shown in FIG. 1, the resist coating / developing apparatus includes a processing mechanism unit 10 in which a processing mechanism for performing various processes on an object to be processed, for example, a semiconductor wafer W (hereinafter simply referred to as a wafer), is provided. Loading / unloading mechanism 1 for automatically loading / unloading the wafer W into / from the processing mechanism unit 10.
The main part is composed of and.
【００１５】搬入・搬出機構１は、処理前のウエハＷを
収納するウエハキャリア２と、処理後のウエハＷを収納
するウエハキャリア３と、ウエハＷを吸着保持するアー
ム４と、このアーム４をＸ，Ｙ，Ｚ（垂直）及びθ（回
転）方向に移動させる移動機構５と、ウエハＷがアライ
メントされかつ処理機構ユニット１０との間でウエハＷ
の受け渡しがなされるアライメントステージ６とを備え
ている。The loading / unloading mechanism 1 includes a wafer carrier 2 for storing an unprocessed wafer W, a wafer carrier 3 for storing a processed wafer W, an arm 4 for sucking and holding the wafer W, and an arm 4. The wafer W is aligned between the moving mechanism 5 for moving the wafer W in the X, Y, Z (vertical) and θ (rotation) directions and the processing mechanism unit 10.
And an alignment stage 6 for receiving and delivering.
【００１６】処理機構ユニット１０には、アライメント
ステージ６よりＸ方向に形成された搬送路１１に沿って
移動自在に搬送機構１２が設けられている。搬送機構１
２にはＹ，Ｚ及びθ方向に移動自在にメインアーム１３
が設けられている。搬送路１１の一方の側には、ウエハ
Ｗとレジスト膜との密着性を向上させるためのアドヒー
ジョン処理を行うアドヒージョン処理機構１４と、ウエ
ハＷに塗布されたレジスト中に残存する溶剤を加熱蒸発
させるためのプリベーク機構１５と、加熱処理されたウ
エハＷを冷却する冷却機構１６とが配設されている。ま
た、搬送路１１の他方の側には、ウエハＷの表面に処理
液例えば現像液を塗布するこの発明の処理装置である現
像機構１７と、ウエハＷの上にレジスト膜を塗布形成す
る塗布機構１８とが配設されている。The processing mechanism unit 10 is provided with a transfer mechanism 12 movably along a transfer path 11 formed in the X direction from the alignment stage 6. Transport mechanism 1
2 has a main arm 13 movably in Y, Z and θ directions.
Is provided. On one side of the transfer path 11, an adhesion processing mechanism 14 for performing an adhesion process for improving the adhesion between the wafer W and the resist film, and a solvent remaining in the resist applied to the wafer W are heated and evaporated. A pre-bake mechanism 15 and a cooling mechanism 16 for cooling the heat-treated wafer W are provided. Further, on the other side of the transport path 11, a developing mechanism 17 which is a processing apparatus of the present invention for applying a processing liquid, for example, a developing solution onto the surface of the wafer W, and a coating mechanism for applying and forming a resist film on the wafer W. And 18 are provided.
【００１７】上記のように構成されるレジスト塗布現像
装置において、まず、処理前のウエハＷは、搬入・搬出
機構１のアーム４によってウエハキャリア２から搬出さ
れてアライメントステージ６上に載置位置決めされる。
次いで、アライメントステージ６上のウエハＷは、搬送
機構１２のメインアーム１３に保持されて、各処理機構
１４〜１８へと搬送され、レジスト塗布あるいは現像処
理される。そして、処理後のウエハＷはメインアーム１
３によってアライメントステージ６に戻され、更にアー
ム４により搬送されてウエハキャリア３に収納されるこ
とになる。In the resist coating and developing apparatus configured as described above, first, the unprocessed wafer W is unloaded from the wafer carrier 2 by the arm 4 of the loading / unloading mechanism 1 and placed and positioned on the alignment stage 6. It
Next, the wafer W on the alignment stage 6 is held by the main arm 13 of the transfer mechanism 12 and transferred to each of the processing mechanisms 14 to 18 for resist coating or development processing. Then, the processed wafer W is transferred to the main arm 1
It is returned to the alignment stage 6 by 3, and further transported by the arm 4 and stored in the wafer carrier 3.
【００１８】次に、この発明の処理装置１７について説
明する。この発明の処理装置は、図１に示すように、ウ
エハＷを吸着保持すると共に垂直移動及び水平回転可能
に保持するスピンチャック２０と、このスピンチャック
２０の上方に移動されてウエハＷの表面に処理液である
現像液を供給する処理液供給ノズル２１と、スピンチャ
ック２０の一方側に配置されて不使用時の処理液供給ノ
ズル２１を保持する待機手段２３と、スピンチャック２
０の他方側に配置されて現像処理後、ウエハＷをリンス
するためのリンス液供給ノズル２４と、処理液供給ノズ
ル２１をスピンチャック２０上及び待機手段２３上に選
択移動するノズル移動機構２５とで主要部が構成されて
いる。Next, the processing device 17 of the present invention will be described. As shown in FIG. 1, the processing apparatus of the present invention includes a spin chuck 20 that holds a wafer W by suction and holds the wafer W in a vertically movable and horizontally rotatable manner. A processing liquid supply nozzle 21 for supplying a developing liquid which is a processing liquid, a standby unit 23 arranged on one side of the spin chuck 20 for holding the processing liquid supply nozzle 21 when not in use, and the spin chuck 2
A rinse liquid supply nozzle 24 for rinsing the wafer W after the development processing by being arranged on the other side of 0, and a nozzle moving mechanism 25 for selectively moving the processing liquid supply nozzle 21 onto the spin chuck 20 and the standby means 23. The main part is composed of.
【００１９】上記処理液供給ノズル２１は、図２及び図
３に示すように、ウエハＷの直径とほぼ同じ長さに形成
された矩形容器２６と、この矩形容器２６の底部から下
方に向って突出される凸条部２７に適宜間隔をおいて直
線状に列設される多数の細孔からなるノズル孔２２と、
Ｏリング２８を介して矩形容器２６を気密に閉塞する開
閉可能な蓋体２９とで構成されている。なお、蓋体２９
には処理液供給管３０が接続されており、図示しない処
理液供給源から不活性ガス（例えば窒素（Ｎ2））の気
体等によって所定圧で矩形容器２６内に所定の現像液Ｌ
が圧送により供給可能となっている。As shown in FIGS. 2 and 3, the processing liquid supply nozzle 21 has a rectangular container 26 having a length substantially equal to the diameter of the wafer W, and a downward direction from the bottom of the rectangular container 26. Nozzle holes 22 composed of a large number of fine holes arranged in a straight line in the protruding ridges 27 at appropriate intervals,
It is configured with an openable / closable lid 29 that hermetically closes the rectangular container 26 via an O-ring 28. The lid 29
A processing liquid supply pipe 30 is connected to the predetermined developing solution L in the rectangular container 26 at a predetermined pressure by a gas such as an inert gas (for example, nitrogen (N2)) from a processing liquid supply source (not shown).
Can be supplied by pressure.
【００２０】上記各ノズル孔２２の配列ピッチは、図５
に示すように、処理液供給ノズル２１のノズル孔２２の
列の中心部から外方に向ってそのピッチが、 ｐ1 ＞ｐ2 ＞ｐ3 ＞…ｐn-1 ＞ｐn の関係に形成されて、中心部から外方に向ってピッチが
より密となり、単位面積当りのノズル孔２２の面積すな
わちノズル孔２２の断面積の合計面積が漸次増大される
ように形成されている。具体的には、ノズル口径が０．
１〜１．０mm程度，例えば０．５mm、ノズル孔２２の数
が数百個，例えば１５０個、ピッチが０．８〜２．０mm
程度，例えば中心側２．０mm，中間１．５mm，外方側
１．０mmである。The arrangement pitch of the nozzle holes 22 is shown in FIG.
As shown in FIG. 4, the pitch of the processing liquid supply nozzles 21 is formed outwardly from the center of the row of nozzle holes 22 in the relationship of p1>p2>p3> ... pn-1> pn It is formed so that the pitch becomes closer to the outside from, and the area of the nozzle holes 22 per unit area, that is, the total area of the cross-sectional areas of the nozzle holes 22 gradually increases. Specifically, the nozzle diameter is 0.
About 1 to 1.0 mm, for example 0.5 mm, the number of nozzle holes 22 is several hundred, for example 150, and the pitch is 0.8 to 2.0 mm.
The degree is, for example, 2.0 mm on the center side, 1.5 mm in the middle, and 1.0 mm on the outer side.
【００２１】したがって、処理液供給ノズル２１の中心
から外方に向ってノズル孔２２からの現像液Ｌの吐出孔
の総面積換言すれば現像液Ｌの吐出量を漸次増大させる
ことができるので、現像液Ｌをウエハ表面上に均等に供
給することができる。Therefore, the total area of the discharge holes of the developing solution L from the nozzle holes 22 from the center of the processing solution supply nozzle 21 to the outside can be increased, that is, the discharging amount of the developing solution L can be gradually increased. The developing solution L can be evenly supplied onto the wafer surface.
【００２２】なお、上記実施例ではノズル孔２２の口径
を同一にして配列ピッチを変えてノズル孔２２の実質的
な面積を中心部から外方に向って漸次増大させる場合に
ついて説明したが、必ずしもこのような構造とする必要
はなく、例えば図６に示すように、ノズル孔２２のピッ
チを同一（ｐ）にし、ノズル孔２２の口径を外方に行く
に従って漸次増大させることによってノズル孔２２の面
積を処理液供給ノズル２１の中心部から外方に向って漸
次増大させることもできる。In the above embodiment, the case where the diameters of the nozzle holes 22 are made the same and the arrangement pitch is changed and the substantial area of the nozzle holes 22 is gradually increased outward from the central portion has been described. It is not necessary to have such a structure. For example, as shown in FIG. 6, the pitch of the nozzle holes 22 is made equal (p), and the diameter of the nozzle holes 22 is gradually increased toward the outside, so that the nozzle holes 22 The area can be gradually increased outward from the center of the processing liquid supply nozzle 21.
【００２３】また、上記処理液供給ノズル２１に設けら
れた凸条部２７は、図２及び図３に示すように、先端に
向って先細り状のテーパー面２７ａが形成されており、
かつ凸条部２７の先端には円弧状部２７ｂが形成されて
いる。このように凸条部２７に先細り状のテーパー面２
７ａを形成することにより、ノズル孔２２からウエハＷ
表面に現像液Ｌを塗布する際の現像液Ｌの跳ね上がり
（盛上り）高さＨを、テーパー面を設けない場合に比べ
て少なくすることができ、現像液Ｌの凸条部２７への付
着を少なくすることができる（図３参照）。また、凸条
部２７の先端に例えば直径Ｒ＝１mm程度の円弧状部２７
ｂを形成することにより、処理液供給後に、処理液供給
ノズル２１をウエハＷから持上げる際の液切れを良好に
することができ、凸条部２７への現像液Ｌの付着を少な
くすることができる。Further, as shown in FIGS. 2 and 3, the ridge portion 27 provided on the treatment liquid supply nozzle 21 is formed with a tapered taper surface 27a toward the tip,
In addition, an arcuate portion 27b is formed at the tip of the ridge 27. In this way, the taper surface 2 having a tapered shape is formed on the ridge 27.
By forming 7a, the wafer W
The height (H) of the developer L when the developer L is applied to the surface can be reduced as compared with the case where the tapered surface is not provided, and the developer L adheres to the ridges 27. Can be reduced (see FIG. 3). In addition, for example, an arc-shaped portion 27 having a diameter R of about 1 mm is provided at the tip of the protruding portion 27.
By forming b, it is possible to favorably run out the liquid when the processing liquid supply nozzle 21 is lifted from the wafer W after the processing liquid is supplied, and to reduce the adhesion of the developing liquid L to the ridges 27. You can
【００２４】一方、上記処理液供給ノズル２１は、図７
に示すように、ノズル移動機構２５によって左右に水平
移動可能に形成されており、現像液Ｌを吐出する際にス
ピンチャック２０の水平回転と処理液供給ノズル２１の
水平移動とが相俟ってウエハＷの表面に均等に現像液Ｌ
が供給されるようになっている。具体的には、水平移動
速度が５〜２０mm／sec 、移動距離がウエハ中心から±
３〜±５mm、スピンチャックの回転数が２０〜５０ｒｐ
ｍ，例えば３０ｒｐｍである。On the other hand, the processing liquid supply nozzle 21 is shown in FIG.
As shown in FIG. 3, the nozzle moving mechanism 25 is formed so as to be horizontally movable left and right, and when the developing solution L is discharged, the horizontal rotation of the spin chuck 20 and the horizontal movement of the processing liquid supply nozzle 21 are combined. The developer L is evenly distributed on the surface of the wafer W.
Are being supplied. Specifically, the horizontal movement speed is 5 to 20 mm / sec, and the movement distance is ± from the wafer center.
3 to ± 5 mm, spin chuck rotation speed is 20 to 50 rp
m, for example 30 rpm.
【００２５】この場合、処理液供給ノズル２１を水平方
向に平行移動させて現像液ＬをウエハＷ表面に供給して
いるが、必ずしも処理液供給ノズル２１を左右に平行に
水平移動させる必要はなく、例えば図８に示すように、
処理液供給ノズル２１の一端を揺動アーム３１にて支持
し、揺動アーム３１を回転機構３２によって左右に揺動
させるようにしてもよい。更には、処理液供給ノズル２
１の水平移動や揺動にかえてスピンチャック２０及びウ
エハＷを左右に移動させるようにしてもよい。In this case, the processing solution supply nozzle 21 is moved in parallel in the horizontal direction to supply the developing solution L to the surface of the wafer W, but it is not always necessary to move the processing solution supply nozzle 21 horizontally in parallel. , For example, as shown in FIG.
One end of the treatment liquid supply nozzle 21 may be supported by the swing arm 31, and the swing arm 31 may be swung left and right by the rotation mechanism 32. Furthermore, the processing liquid supply nozzle 2
Instead of horizontally moving or swinging 1, the spin chuck 20 and the wafer W may be moved left and right.
【００２６】次に、この発明の処理装置の動作について
説明する。まず、予め矩形容器２６内に現像液Ｌを供給
し、矩形容器２６内に現像液Ｌを満たした状態としてお
き、処理液供給ノズル２１を待機手段２３に待機させて
おく。そして、搬送機構１２のメインアーム１３によっ
て搬送されるウエハＷをスピンチャック２０上に載置
し、図示しない真空手段によってウエハＷをスピンチャ
ック２０上に吸着保持する。Next, the operation of the processing apparatus of the present invention will be described. First, the developing solution L is supplied in advance into the rectangular container 26 so that the rectangular container 26 is filled with the developing solution L, and the processing liquid supply nozzle 21 is made to stand by by the standby means 23. Then, the wafer W transferred by the main arm 13 of the transfer mechanism 12 is placed on the spin chuck 20, and the wafer W is suction-held on the spin chuck 20 by a vacuum means (not shown).
【００２７】次に、ノズル移動機構２５の駆動により、
処理液供給ノズル２１がウエハＷの中心位置付近まで水
平移動された後、スピンチャック２０と処理液供給ノズ
ル２１とを相対的に上下動させ、処理液供給ノズル２１
底面の凸条部２７の先端とウエハＷ表面との間が微小間
隔，例えば０．５〜２．０mmの範囲となるように設定す
る。Next, by driving the nozzle moving mechanism 25,
After the processing liquid supply nozzle 21 is horizontally moved to the vicinity of the center position of the wafer W, the spin chuck 20 and the processing liquid supply nozzle 21 are moved up and down relatively to each other.
The distance between the tip of the ridge 27 on the bottom surface and the surface of the wafer W is set to be a minute distance, for example, 0.5 to 2.0 mm.
【００２８】そして、処理液供給管３０から所定圧力，
例えば０．５〜１．０Kg／cm2 で矩形容器２６内に所定
の現像液Ｌを供給することにより、各ノズル孔２２から
滲み出させるようにして現像液Ｌは、処理液供給ノズル
２１の中心部すなわちウエハＷの中心部には少なく、外
周部は多く供給される。この際、スピンチャック２０に
よりウエハＷを低速例えば３０ｒｐｍで約１／２回転さ
せると共に、処理液供給ノズル２１とウエハＷとを相対
的に水平方向に移動させることにより、ウエハＷ上に帯
状に供給された現像液Ｌは、処理液供給ノズル２１の凸
条部２７によって押し広げられてウエハＷ表面全体に均
等に塗布される。このように、ウエハＷ表面に現像液Ｌ
を供給して塗布した後、処理液供給ノズル２１は上昇
し、待機手段２３に退避されて処理作業は終了する。Then, a predetermined pressure is applied from the processing liquid supply pipe 30,
For example, by supplying a predetermined developing solution L into the rectangular container 26 at 0.5 to 1.0 kg / cm 2, the developing solution L oozes out from each nozzle hole 22, and the developing solution L is at the center of the processing solution supply nozzle 21. A small amount is supplied to the central portion of the wafer W, that is, a large amount is supplied to the outer peripheral portion. At this time, the wafer W is supplied in a strip shape on the wafer W by rotating the wafer W at a low speed, for example, about 1/2 at 30 rpm by the spin chuck 20, and moving the processing liquid supply nozzle 21 and the wafer W relatively horizontally. The developed developer L is spread by the ridges 27 of the processing liquid supply nozzle 21 and is evenly applied to the entire surface of the wafer W. In this way, the developer L
After the coating liquid has been supplied and applied, the processing liquid supply nozzle 21 rises and is retracted to the standby means 23, and the processing operation is completed.
【００２９】なお、上記実施例では、この発明の処理装
置を半導体ウエハのレジスト塗布現像装置に適用した場
合について説明したが、必ずしもレジスト塗布現像装置
である必要はなく、レジスト以外の処理液の供給装置に
も適用でき、また、被処理体は半導体ウエハ以外に例え
ばＬＣＤガラス基板、ＣＤ等の基板にも適用できること
は勿論である。In the above embodiment, the case where the processing apparatus of the present invention is applied to the resist coating / developing apparatus for a semiconductor wafer has been described. However, the processing apparatus is not necessarily a resist coating / developing apparatus, and a processing liquid other than the resist is supplied. It is needless to say that it can be applied to an apparatus, and the object to be processed can be applied to not only a semiconductor wafer but also a substrate such as an LCD glass substrate or a CD.
【００３０】[0030]
【発明の効果】以上に説明したように、この発明の処理
装置は、上記のように構成されているので、以下のよう
な効果が得られる。As described above, since the processing apparatus of the present invention is constructed as described above, the following effects can be obtained.
【００３１】１）請求項１に記載の処理装置によれば、
処理液供給ノズルのノズル孔列の中心部から外方に向っ
てノズル孔の面積を漸次増大するので、被処理体の中心
部と外周部に均一に処理液を供給することができ、処理
均一性の向上を図ることができる。1) According to the processing apparatus of claim 1,
Since the area of the nozzle holes is gradually increased outward from the center of the nozzle hole array of the treatment liquid supply nozzle, the treatment liquid can be uniformly supplied to the central portion and the outer peripheral portion of the object to be treated, and the treatment is uniform. It is possible to improve the sex.
【００３２】２）請求項２に記載の処理装置によれば、
処理液供給ノズルのノズル孔を、先端側がテーパー状の
凸条部に設けるので、ノズル先端部の処理液の残留を少
なくすることができ、処理液の付着によるパーティクル
の発生を抑制し、被処理体の汚染防止を図ることができ
る。2) According to the processing apparatus of claim 2,
Since the nozzle hole of the processing liquid supply nozzle is provided on the tapered ridge portion on the tip side, it is possible to reduce the amount of processing liquid remaining at the nozzle tip portion and suppress the generation of particles due to the adhesion of the processing liquid. It is possible to prevent body contamination.
【００３３】３）請求項３に記載の処理装置によれば、
凸条部の先端を円弧状に形成するので、ノズル先端への
処理液の残留の付着を更に抑制することができ、被処理
体の汚染を更に確実に防止することができる。3) According to the processing apparatus of claim 3,
Since the tip of the ridge portion is formed in an arc shape, it is possible to further prevent the residual treatment liquid from adhering to the tip of the nozzle, and it is possible to more reliably prevent contamination of the object to be treated.
【図１】この発明の処理装置を適用したレジスト塗布現
像装置の概略平面図である。FIG. 1 is a schematic plan view of a resist coating / developing apparatus to which the processing apparatus of the present invention is applied.
【図２】この発明における被処理体と処理液供給ノズル
を示す分解斜視図である。FIG. 2 is an exploded perspective view showing an object to be processed and a processing liquid supply nozzle according to the present invention.
【図３】処理液供給ノズルの断面図である。FIG. 3 is a cross-sectional view of a processing liquid supply nozzle.
【図４】処理後に処理液供給ノズルを持上げた状態の要
部断面図である。FIG. 4 is a cross-sectional view of essential parts in a state where a treatment liquid supply nozzle is lifted after treatment.
【図５】この発明における処理液供給ノズルのノズル孔
の一例を示す底面図である。FIG. 5 is a bottom view showing an example of a nozzle hole of the treatment liquid supply nozzle according to the present invention.
【図６】処理液供給ノズルのノズル孔の別の実施例を示
す要部底面図である。FIG. 6 is a bottom view of essential parts showing another embodiment of the nozzle holes of the treatment liquid supply nozzle.
【図７】処理液供給ノズルの処理液供給状態の一例を示
す斜視図である。FIG. 7 is a perspective view showing an example of a processing liquid supply state of a processing liquid supply nozzle.
【図８】処理液供給ノズルの処理液供給状態の別の実施
例を示す斜視図である。FIG. 8 is a perspective view showing another embodiment of the processing liquid supply state of the processing liquid supply nozzle.
【符号の説明】 ２０ スピンチャック（保持手段） ２１ 処理液供給ノズル ２２ ノズル孔 ２７ 凸条部 ２７ａ テーパー面 ２７ｂ 円弧状部 Ｌ 現像液（処理液） Ｗ 半導体ウエハ（被処理体）[Description of Reference Signs] 20 spin chuck (holding means) 21 processing liquid supply nozzle 22 nozzle hole 27 ridge 27a tapered surface 27b arcuate portion L developer (processing liquid) W semiconductor wafer (object to be processed)
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｇ０３Ｆ 7/30 ５０２ 7124−2Ｈ // Ｂ０５Ｃ 11/08 6804−4Ｄ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI Technical display location G03F 7/30 502 7124-2H // B05C 11/08 6804-4D
Claims (3)
処理体の表面に処理液を吐出する複数のノズル孔を列設
する処理液供給ノズルとを具備し、かつ上記保持手段と
処理液供給ノズルとを相対的に移動して処理液を上記被
処理体上に供給する処理装置において、 上記処理液供給ノズルのノズル孔列の中心部から外方に
向ってノズル孔の面積を漸次増大することを特徴とする
処理装置。1. A holding means for holding an object to be processed, and a processing liquid supply nozzle having a plurality of nozzle holes for ejecting a processing liquid on the surface of the object to be processed, the holding means and the processing. In a processing apparatus that relatively moves a liquid supply nozzle to supply a processing liquid onto the object to be processed, in the processing liquid supply nozzle, the area of the nozzle hole is gradually increased outward from the center of the nozzle hole row. A processing device characterized by increasing.
がテーパー状の凸条部に設けることを特徴とする請求項
１記載の処理装置。2. The processing apparatus according to claim 1, wherein the nozzle hole of the processing liquid supply nozzle is provided in a ridge having a tapered end.
特徴とする請求項２の処理装置。3. The processing apparatus according to claim 2, wherein the tip of the ridge portion is formed in an arc shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19910693A JP2976085B2 (en) | 1993-07-16 | 1993-07-16 | Processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19910693A JP2976085B2 (en) | 1993-07-16 | 1993-07-16 | Processing equipment |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4596899A Division JP3087222B2 (en) | 1999-02-24 | 1999-02-24 | Processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0737797A true JPH0737797A (en) | 1995-02-07 |
| JP2976085B2 JP2976085B2 (en) | 1999-11-10 |
Family
ID=16402228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19910693A Expired - Lifetime JP2976085B2 (en) | 1993-07-16 | 1993-07-16 | Processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2976085B2 (en) |
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| KR19990070189A (en) * | 1998-02-18 | 1999-09-15 | 윤종용 | Etching apparatus with knife type etching nozzle |
| JP2000133587A (en) * | 1998-08-19 | 2000-05-12 | Tokyo Electron Ltd | Image pickup device |
| US6284043B1 (en) | 1997-07-03 | 2001-09-04 | Tokyo Electron Limited | Solution treatment apparatus |
| JP2001334198A (en) * | 2000-03-24 | 2001-12-04 | Tokyo Electron Ltd | Coat processing method and coat processing device |
| WO2003103030A1 (en) * | 2002-06-04 | 2003-12-11 | Tokyo Electron Limited | Substrate processing device, substrate processing method, and nozzle |
| KR100828664B1 (en) * | 2006-11-24 | 2008-05-09 | 주식회사 디엠에스 | Fluid injection device |
| KR101041447B1 (en) * | 2008-11-26 | 2011-06-15 | 세메스 주식회사 | Nozzle and Substrate Processing Apparatus Having The Same |
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| JP2013055899A (en) * | 2011-09-07 | 2013-03-28 | Dainippon Printing Co Ltd | Method for producing dispensing liquid coated sheet |
| CN104567665A (en) * | 2013-10-29 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | Detection method of control wafer and nozzle in gumming developer |
| JP2016032481A (en) * | 2015-12-07 | 2016-03-10 | 大日本印刷株式会社 | Method for producing dispensing liquid coated sheet |
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|---|---|---|---|---|
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| US6527861B2 (en) | 1997-07-03 | 2003-03-04 | Tokyo Electron Limited | Developing apparatus with a porous film nozzle |
| KR19990070189A (en) * | 1998-02-18 | 1999-09-15 | 윤종용 | Etching apparatus with knife type etching nozzle |
| JP2000133587A (en) * | 1998-08-19 | 2000-05-12 | Tokyo Electron Ltd | Image pickup device |
| JP2001334198A (en) * | 2000-03-24 | 2001-12-04 | Tokyo Electron Ltd | Coat processing method and coat processing device |
| WO2003103030A1 (en) * | 2002-06-04 | 2003-12-11 | Tokyo Electron Limited | Substrate processing device, substrate processing method, and nozzle |
| KR100828664B1 (en) * | 2006-11-24 | 2008-05-09 | 주식회사 디엠에스 | Fluid injection device |
| KR101041447B1 (en) * | 2008-11-26 | 2011-06-15 | 세메스 주식회사 | Nozzle and Substrate Processing Apparatus Having The Same |
| JP2013500848A (en) * | 2009-07-29 | 2013-01-10 | イリノイ トゥール ワークス インコーポレイティド | Wide pattern nozzle |
| US9321060B2 (en) | 2009-07-29 | 2016-04-26 | Illinois Tool Works Inc. | Wide pattern nozzle |
| JP2011245597A (en) * | 2010-05-28 | 2011-12-08 | Iwatani Electronics Corp | Injection nozzle for blast |
| JP2012213340A (en) * | 2011-03-31 | 2012-11-08 | Dainippon Printing Co Ltd | Method for producing dispensing liquid coated sheet |
| JP2013055899A (en) * | 2011-09-07 | 2013-03-28 | Dainippon Printing Co Ltd | Method for producing dispensing liquid coated sheet |
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| JP2016032481A (en) * | 2015-12-07 | 2016-03-10 | 大日本印刷株式会社 | Method for producing dispensing liquid coated sheet |
| WO2017121643A1 (en) * | 2016-01-14 | 2017-07-20 | Dürr Systems Ag | Perforated plate with a reduced diameter in one or both edge regions of a row of nozzles |
| CN108698072A (en) * | 2016-01-14 | 2018-10-23 | 杜尔系统股份公司 | Perforated plate with reduced diameter in one or both edge regions of a nozzle row |
| JP2019501770A (en) * | 2016-01-14 | 2019-01-24 | デュール システムズ アーゲーＤｕｒｒ Ｓｙｓｔｅｍｓ ＡＧ | Perforated plate with a reduced diameter in one or both edge regions of the nozzle row |
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| US11097291B2 (en) | 2016-01-14 | 2021-08-24 | Dürr Systems Ag | Perforated plate with increased hole spacing in one or both edge regions of a row of nozzles |
| US11529645B2 (en) | 2016-01-14 | 2022-12-20 | Dürr Systems Ag | Perforated plate with a reduced diameter in one or both edge regions of a row of nozzles |
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|---|---|
| JP2976085B2 (en) | 1999-11-10 |
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