JPH06332178A - Photosensitive polyimide precursor composition - Google Patents
Photosensitive polyimide precursor compositionInfo
- Publication number
- JPH06332178A JPH06332178A JP11726193A JP11726193A JPH06332178A JP H06332178 A JPH06332178 A JP H06332178A JP 11726193 A JP11726193 A JP 11726193A JP 11726193 A JP11726193 A JP 11726193A JP H06332178 A JPH06332178 A JP H06332178A
- Authority
- JP
- Japan
- Prior art keywords
- group
- carbon atoms
- polyimide precursor
- film
- polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920001721 polyimide Polymers 0.000 title claims abstract description 42
- 239000000203 mixture Substances 0.000 title claims abstract description 37
- 239000004642 Polyimide Substances 0.000 title claims description 36
- 239000002243 precursor Substances 0.000 title claims description 27
- 229920000642 polymer Polymers 0.000 claims abstract description 23
- 150000001875 compounds Chemical class 0.000 claims abstract description 15
- 239000000178 monomer Substances 0.000 claims abstract description 12
- 125000000962 organic group Chemical group 0.000 claims abstract description 12
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims abstract description 4
- 229910001413 alkali metal ion Inorganic materials 0.000 claims abstract description 4
- 125000001183 hydrocarbyl group Chemical group 0.000 claims abstract 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 20
- 150000002430 hydrocarbons Chemical class 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 150000002431 hydrogen Chemical class 0.000 claims description 4
- 239000004215 Carbon black (E152) Substances 0.000 claims description 2
- 229930195733 hydrocarbon Natural products 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 21
- -1 isocyanate compound Chemical class 0.000 description 20
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 18
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 14
- 239000000243 solution Substances 0.000 description 13
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 10
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 10
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 9
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 9
- 229920005575 poly(amic acid) Polymers 0.000 description 8
- 238000011282 treatment Methods 0.000 description 8
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 7
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 7
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 6
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 239000002798 polar solvent Substances 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 229960000956 coumarin Drugs 0.000 description 5
- 235000001671 coumarin Nutrition 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 239000008096 xylene Substances 0.000 description 5
- GPXCORHXFPYJEH-UHFFFAOYSA-N 3-[[3-aminopropyl(dimethyl)silyl]oxy-dimethylsilyl]propan-1-amine Chemical compound NCCC[Si](C)(C)O[Si](C)(C)CCCN GPXCORHXFPYJEH-UHFFFAOYSA-N 0.000 description 4
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 4
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 4
- 150000002923 oximes Chemical class 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 4
- ATFSWXVGWYEMPI-UHFFFAOYSA-N 2-[ethoxycarbonyl(ethyl)amino]ethyl 2-methylprop-2-enoate Chemical compound CCOC(=O)N(CC)CCOC(=O)C(C)=C ATFSWXVGWYEMPI-UHFFFAOYSA-N 0.000 description 3
- JJZNCUHIYJBAMS-UHFFFAOYSA-N 3-phenyl-2h-1,2-oxazol-5-one Chemical compound N1OC(=O)C=C1C1=CC=CC=C1 JJZNCUHIYJBAMS-UHFFFAOYSA-N 0.000 description 3
- ICNFHJVPAJKPHW-UHFFFAOYSA-N 4,4'-Thiodianiline Chemical compound C1=CC(N)=CC=C1SC1=CC=C(N)C=C1 ICNFHJVPAJKPHW-UHFFFAOYSA-N 0.000 description 3
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical group C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 3
- 238000007664 blowing Methods 0.000 description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical group C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical group CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 3
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 2
- MILSYCKGLDDVLM-UHFFFAOYSA-N 2-phenylpropan-2-ylbenzene Chemical group C=1C=CC=CC=1C(C)(C)C1=CC=CC=C1 MILSYCKGLDDVLM-UHFFFAOYSA-N 0.000 description 2
- SMBSZJBWYCGCJP-UHFFFAOYSA-N 3-(diethylamino)chromen-2-one Chemical compound C1=CC=C2OC(=O)C(N(CC)CC)=CC2=C1 SMBSZJBWYCGCJP-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 125000006267 biphenyl group Chemical group 0.000 description 2
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 2
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 2
- 229960001231 choline Drugs 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 150000003950 cyclic amides Chemical class 0.000 description 2
- 150000004985 diamines Chemical class 0.000 description 2
- KZTYYGOKRVBIMI-UHFFFAOYSA-N diphenyl sulfone Chemical group C=1C=CC=CC=1S(=O)(=O)C1=CC=CC=C1 KZTYYGOKRVBIMI-UHFFFAOYSA-N 0.000 description 2
- 150000002596 lactones Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- RBQRWNWVPQDTJJ-UHFFFAOYSA-N methacryloyloxyethyl isocyanate Chemical group CC(=C)C(=O)OCCN=C=O RBQRWNWVPQDTJJ-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 125000001624 naphthyl group Chemical group 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 2
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 2
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 2
- 229920002818 (Hydroxyethyl)methacrylate Polymers 0.000 description 1
- YLHUPYSUKYAIBW-UHFFFAOYSA-N 1-acetylpyrrolidin-2-one Chemical compound CC(=O)N1CCCC1=O YLHUPYSUKYAIBW-UHFFFAOYSA-N 0.000 description 1
- LZPSMVJUUYMDSC-UHFFFAOYSA-N 2-(benzylcarbamoylamino)ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCNC(=O)NCC1=CC=CC=C1 LZPSMVJUUYMDSC-UHFFFAOYSA-N 0.000 description 1
- IGAUOKLJSOVOAG-UHFFFAOYSA-N 2-(butylcarbamoylamino)ethyl 2-methylprop-2-enoate Chemical compound CCCCNC(=O)NCCOC(=O)C(C)=C IGAUOKLJSOVOAG-UHFFFAOYSA-N 0.000 description 1
- LECNYTOLLNCBBO-UHFFFAOYSA-N 2-(carbamoylamino)ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCNC(N)=O LECNYTOLLNCBBO-UHFFFAOYSA-N 0.000 description 1
- QPZCTFRNJRJWBV-UHFFFAOYSA-N 2-(cyclohexylcarbamoylamino)ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCNC(=O)NC1CCCCC1 QPZCTFRNJRJWBV-UHFFFAOYSA-N 0.000 description 1
- SJIXRGNQPBQWMK-UHFFFAOYSA-N 2-(diethylamino)ethyl 2-methylprop-2-enoate Chemical compound CCN(CC)CCOC(=O)C(C)=C SJIXRGNQPBQWMK-UHFFFAOYSA-N 0.000 description 1
- QHVBLSNVXDSMEB-UHFFFAOYSA-N 2-(diethylamino)ethyl prop-2-enoate Chemical compound CCN(CC)CCOC(=O)C=C QHVBLSNVXDSMEB-UHFFFAOYSA-N 0.000 description 1
- JKNCOURZONDCGV-UHFFFAOYSA-N 2-(dimethylamino)ethyl 2-methylprop-2-enoate Chemical compound CN(C)CCOC(=O)C(C)=C JKNCOURZONDCGV-UHFFFAOYSA-N 0.000 description 1
- DPBJAVGHACCNRL-UHFFFAOYSA-N 2-(dimethylamino)ethyl prop-2-enoate Chemical compound CN(C)CCOC(=O)C=C DPBJAVGHACCNRL-UHFFFAOYSA-N 0.000 description 1
- JMVWZBIVWOMGDO-UHFFFAOYSA-N 2-(ethylcarbamoylamino)ethyl 2-methylprop-2-enoate Chemical compound CCNC(=O)NCCOC(=O)C(C)=C JMVWZBIVWOMGDO-UHFFFAOYSA-N 0.000 description 1
- ITSQZSJBXQCZOY-UHFFFAOYSA-N 2-(methylcarbamoylamino)ethyl 2-methylprop-2-enoate Chemical compound CNC(=O)NCCOC(=O)C(C)=C ITSQZSJBXQCZOY-UHFFFAOYSA-N 0.000 description 1
- DMQZWACBFJXORE-UHFFFAOYSA-N 2-(propylcarbamoylamino)ethyl 2-methylprop-2-enoate Chemical compound CCCNC(=O)NCCOC(=O)C(C)=C DMQZWACBFJXORE-UHFFFAOYSA-N 0.000 description 1
- BEWCNXNIQCLWHP-UHFFFAOYSA-N 2-(tert-butylamino)ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCNC(C)(C)C BEWCNXNIQCLWHP-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- SCZWCYIBDBUUTI-UHFFFAOYSA-N 2-[benzyl(ethoxycarbonyl)amino]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCN(C(=O)OCC)CC1=CC=CC=C1 SCZWCYIBDBUUTI-UHFFFAOYSA-N 0.000 description 1
- GWLNTXWTVWSGEV-UHFFFAOYSA-N 2-[butyl(ethoxycarbonyl)amino]ethyl 2-methylprop-2-enoate Chemical compound CCCCN(C(=O)OCC)CCOC(=O)C(C)=C GWLNTXWTVWSGEV-UHFFFAOYSA-N 0.000 description 1
- OJPDDQSCZGTACX-UHFFFAOYSA-N 2-[n-(2-hydroxyethyl)anilino]ethanol Chemical compound OCCN(CCO)C1=CC=CC=C1 OJPDDQSCZGTACX-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- JNDVNJWCRZQGFQ-UHFFFAOYSA-N 2-methyl-N,N-bis(methylamino)hex-2-enamide Chemical compound CCCC=C(C)C(=O)N(NC)NC JNDVNJWCRZQGFQ-UHFFFAOYSA-N 0.000 description 1
- DEQUFFZCXSTYJC-UHFFFAOYSA-N 3,4-diphenylbenzene-1,2-diamine Chemical compound C=1C=CC=CC=1C1=C(N)C(N)=CC=C1C1=CC=CC=C1 DEQUFFZCXSTYJC-UHFFFAOYSA-N 0.000 description 1
- PCUPXNDEQDWEMM-UHFFFAOYSA-N 3-(diethylamino)propyl 2-methylprop-2-enoate Chemical compound CCN(CC)CCCOC(=O)C(C)=C PCUPXNDEQDWEMM-UHFFFAOYSA-N 0.000 description 1
- XUYDVDHTTIQNMB-UHFFFAOYSA-N 3-(diethylamino)propyl prop-2-enoate Chemical compound CCN(CC)CCCOC(=O)C=C XUYDVDHTTIQNMB-UHFFFAOYSA-N 0.000 description 1
- WWJCRUKUIQRCGP-UHFFFAOYSA-N 3-(dimethylamino)propyl 2-methylprop-2-enoate Chemical compound CN(C)CCCOC(=O)C(C)=C WWJCRUKUIQRCGP-UHFFFAOYSA-N 0.000 description 1
- UFQHFMGRRVQFNA-UHFFFAOYSA-N 3-(dimethylamino)propyl prop-2-enoate Chemical compound CN(C)CCCOC(=O)C=C UFQHFMGRRVQFNA-UHFFFAOYSA-N 0.000 description 1
- DBCAQXHNJOFNGC-UHFFFAOYSA-N 4-bromo-1,1,1-trifluorobutane Chemical compound FC(F)(F)CCCBr DBCAQXHNJOFNGC-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- SXSPHEMDAWGPDK-UHFFFAOYSA-N C1(CCCCC1)N(C(=O)OCC)CCOC(C(=C)C)=O Chemical compound C1(CCCCC1)N(C(=O)OCC)CCOC(C(=C)C)=O SXSPHEMDAWGPDK-UHFFFAOYSA-N 0.000 description 1
- OGQINTSDCGJELG-UHFFFAOYSA-N CC(CNC(=O)NC)OC(=O)C(=C)C Chemical compound CC(CNC(=O)NC)OC(=O)C(=C)C OGQINTSDCGJELG-UHFFFAOYSA-N 0.000 description 1
- PLEUKSSIIFLULC-UHFFFAOYSA-N CC(CNC(=O)NC1=CC=CC=C1)OC(=O)C(=C)C Chemical compound CC(CNC(=O)NC1=CC=CC=C1)OC(=O)C(=C)C PLEUKSSIIFLULC-UHFFFAOYSA-N 0.000 description 1
- BXJIKNYHKVTDLZ-UHFFFAOYSA-N CC(CNC(=O)NC1CCCCC1)OC(=O)C(=C)C Chemical compound CC(CNC(=O)NC1CCCCC1)OC(=O)C(=C)C BXJIKNYHKVTDLZ-UHFFFAOYSA-N 0.000 description 1
- GHYJVDSXISMABB-UHFFFAOYSA-N CC(CNC(=O)NCC1=CC=CC=C1)OC(=O)C(=C)C Chemical compound CC(CNC(=O)NCC1=CC=CC=C1)OC(=O)C(=C)C GHYJVDSXISMABB-UHFFFAOYSA-N 0.000 description 1
- CDQMDJZRYXTLHG-UHFFFAOYSA-N CCCC=C(C)C(=O)N(NCC)NCC Chemical compound CCCC=C(C)C(=O)N(NCC)NCC CDQMDJZRYXTLHG-UHFFFAOYSA-N 0.000 description 1
- DCOPYTGOXWETJM-UHFFFAOYSA-N CCCCCN(CC(C)OC(=O)C(=C)C)C(=O)OCC Chemical compound CCCCCN(CC(C)OC(=O)C(=C)C)C(=O)OCC DCOPYTGOXWETJM-UHFFFAOYSA-N 0.000 description 1
- AEFDQNDNJIFPAD-UHFFFAOYSA-N CCCCCN(CCOC(=O)C(=C)C)C(=O)OCC Chemical compound CCCCCN(CCOC(=O)C(=C)C)C(=O)OCC AEFDQNDNJIFPAD-UHFFFAOYSA-N 0.000 description 1
- IVBJIHGQKQNJBU-UHFFFAOYSA-N CCCCCNC(=O)NCC(C)OC(=O)C(=C)C Chemical compound CCCCCNC(=O)NCC(C)OC(=O)C(=C)C IVBJIHGQKQNJBU-UHFFFAOYSA-N 0.000 description 1
- KGLAMMZCVFPDRL-UHFFFAOYSA-N CCCCCNC(=O)NCCOC(=O)C(=C)C Chemical compound CCCCCNC(=O)NCCOC(=O)C(=C)C KGLAMMZCVFPDRL-UHFFFAOYSA-N 0.000 description 1
- VVUQKQXNQDUVKR-UHFFFAOYSA-N CCCCN(CC(C)OC(=O)C(=C)C)C(=O)OCC Chemical compound CCCCN(CC(C)OC(=O)C(=C)C)C(=O)OCC VVUQKQXNQDUVKR-UHFFFAOYSA-N 0.000 description 1
- ZQNRFMZKLIMCLY-UHFFFAOYSA-N CCCCNC(=O)NCC(C)OC(=O)C(=C)C Chemical compound CCCCNC(=O)NCC(C)OC(=O)C(=C)C ZQNRFMZKLIMCLY-UHFFFAOYSA-N 0.000 description 1
- SDYLQIGVTTYPIQ-UHFFFAOYSA-N CCCN(CC(C)OC(=O)C(=C)C)C(=O)OCC Chemical compound CCCN(CC(C)OC(=O)C(=C)C)C(=O)OCC SDYLQIGVTTYPIQ-UHFFFAOYSA-N 0.000 description 1
- WZAZEXVICXDBBY-UHFFFAOYSA-N CCCN(CCOC(=O)C(=C)C)C(=O)OCC Chemical compound CCCN(CCOC(=O)C(=C)C)C(=O)OCC WZAZEXVICXDBBY-UHFFFAOYSA-N 0.000 description 1
- PSXUHUBMSRBKOT-UHFFFAOYSA-N CCCNC(=O)NCC(C)OC(=O)C(=C)C Chemical compound CCCNC(=O)NCC(C)OC(=O)C(=C)C PSXUHUBMSRBKOT-UHFFFAOYSA-N 0.000 description 1
- XZPLBKPKDUTMRP-UHFFFAOYSA-N CCN(CC(C)OC(=O)C(=C)C)C(=O)OCC Chemical compound CCN(CC(C)OC(=O)C(=C)C)C(=O)OCC XZPLBKPKDUTMRP-UHFFFAOYSA-N 0.000 description 1
- DVXICDUQSSTDBD-UHFFFAOYSA-N CCN(CC)CCN(CC(C)OC(=O)C(=C)C)C(=O)OCC Chemical compound CCN(CC)CCN(CC(C)OC(=O)C(=C)C)C(=O)OCC DVXICDUQSSTDBD-UHFFFAOYSA-N 0.000 description 1
- OUDCIDQILAMCCY-UHFFFAOYSA-N CCN(CC)CCN(CCOC(=O)C(=C)C)C(=O)OCC Chemical compound CCN(CC)CCN(CCOC(=O)C(=C)C)C(=O)OCC OUDCIDQILAMCCY-UHFFFAOYSA-N 0.000 description 1
- ZAVFQZYOMSDMKS-UHFFFAOYSA-N CCNC(=O)NCC(C)OC(=O)C(=C)C Chemical compound CCNC(=O)NCC(C)OC(=O)C(=C)C ZAVFQZYOMSDMKS-UHFFFAOYSA-N 0.000 description 1
- UELKUMGUPWVFQC-UHFFFAOYSA-N CCOC(=O)N(C)CC(C)OC(=O)C(=C)C Chemical compound CCOC(=O)N(C)CC(C)OC(=O)C(=C)C UELKUMGUPWVFQC-UHFFFAOYSA-N 0.000 description 1
- VSYIQOOXNHPFQD-UHFFFAOYSA-N CCOC(=O)N(C)CCOC(=O)C(=C)C Chemical compound CCOC(=O)N(C)CCOC(=O)C(=C)C VSYIQOOXNHPFQD-UHFFFAOYSA-N 0.000 description 1
- RALSSUXVDFOBBS-UHFFFAOYSA-N CCOC(=O)N(CC(C)OC(=O)C(=C)C)C1=CC=CC=C1 Chemical compound CCOC(=O)N(CC(C)OC(=O)C(=C)C)C1=CC=CC=C1 RALSSUXVDFOBBS-UHFFFAOYSA-N 0.000 description 1
- WRUGGGMGDHSUSO-UHFFFAOYSA-N CCOC(=O)N(CC(C)OC(=O)C(=C)C)C1CCCCC1 Chemical compound CCOC(=O)N(CC(C)OC(=O)C(=C)C)C1CCCCC1 WRUGGGMGDHSUSO-UHFFFAOYSA-N 0.000 description 1
- WFTBSYBHCQCFAZ-UHFFFAOYSA-N CCOC(=O)N(CC1=CC=CC=C1)CC(C)OC(=O)C(=C)C Chemical compound CCOC(=O)N(CC1=CC=CC=C1)CC(C)OC(=O)C(=C)C WFTBSYBHCQCFAZ-UHFFFAOYSA-N 0.000 description 1
- GJVCTHMQGYWHLT-UHFFFAOYSA-N CCOC(=O)N(CCN(C)C)CC(C)OC(=O)C(=C)C Chemical compound CCOC(=O)N(CCN(C)C)CC(C)OC(=O)C(=C)C GJVCTHMQGYWHLT-UHFFFAOYSA-N 0.000 description 1
- MLAVQFJTZSRBRY-UHFFFAOYSA-N CCOC(=O)N(CCN(C)C)CCOC(=O)C(=C)C Chemical compound CCOC(=O)N(CCN(C)C)CCOC(=O)C(=C)C MLAVQFJTZSRBRY-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical group CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- SUAKHGWARZSWIH-UHFFFAOYSA-N N,N‐diethylformamide Chemical compound CCN(CC)C=O SUAKHGWARZSWIH-UHFFFAOYSA-N 0.000 description 1
- ZWXPDGCFMMFNRW-UHFFFAOYSA-N N-methylcaprolactam Chemical compound CN1CCCCCC1=O ZWXPDGCFMMFNRW-UHFFFAOYSA-N 0.000 description 1
- NPKSPKHJBVJUKB-UHFFFAOYSA-N N-phenylglycine Chemical compound OC(=O)CNC1=CC=CC=C1 NPKSPKHJBVJUKB-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
- OKKRPWIIYQTPQF-UHFFFAOYSA-N Trimethylolpropane trimethacrylate Chemical compound CC(=C)C(=O)OCC(CC)(COC(=O)C(C)=C)COC(=O)C(C)=C OKKRPWIIYQTPQF-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- IDLJKTNBZKSHIY-UHFFFAOYSA-N [4-(diethylamino)phenyl]-phenylmethanone Chemical compound C1=CC(N(CC)CC)=CC=C1C(=O)C1=CC=CC=C1 IDLJKTNBZKSHIY-UHFFFAOYSA-N 0.000 description 1
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- QDVNNDYBCWZVTI-UHFFFAOYSA-N bis[4-(ethylamino)phenyl]methanone Chemical compound C1=CC(NCC)=CC=C1C(=O)C1=CC=C(NCC)C=C1 QDVNNDYBCWZVTI-UHFFFAOYSA-N 0.000 description 1
- 229930188620 butyrolactone Natural products 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 150000004775 coumarins Chemical class 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000001664 diethylamino group Chemical group [H]C([H])([H])C([H])([H])N(*)C([H])([H])C([H])([H])[H] 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 230000032050 esterification Effects 0.000 description 1
- 238000005886 esterification reaction Methods 0.000 description 1
- 125000003754 ethoxycarbonyl group Chemical group C(=O)(OCC)* 0.000 description 1
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical group CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 description 1
- STVZJERGLQHEKB-UHFFFAOYSA-N ethylene glycol dimethacrylate Substances CC(=C)C(=O)OCCOC(=O)C(C)=C STVZJERGLQHEKB-UHFFFAOYSA-N 0.000 description 1
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- GNOIPBMMFNIUFM-UHFFFAOYSA-N hexamethylphosphoric triamide Chemical compound CN(C)P(=O)(N(C)C)N(C)C GNOIPBMMFNIUFM-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000003949 imides Chemical group 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 125000005641 methacryl group Chemical group 0.000 description 1
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 1
- DFENKTCEEGOWLB-UHFFFAOYSA-N n,n-bis(methylamino)-2-methylidenepentanamide Chemical compound CCCC(=C)C(=O)N(NC)NC DFENKTCEEGOWLB-UHFFFAOYSA-N 0.000 description 1
- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 description 1
- YDTPUGYQQLZZKQ-UHFFFAOYSA-N n,n-dimethoxyacetamide Chemical compound CON(OC)C(C)=O YDTPUGYQQLZZKQ-UHFFFAOYSA-N 0.000 description 1
- GVBMMNAPRZDGEY-UHFFFAOYSA-N n-[2-(diethylamino)ethyl]-2-methylprop-2-enamide Chemical compound CCN(CC)CCNC(=O)C(C)=C GVBMMNAPRZDGEY-UHFFFAOYSA-N 0.000 description 1
- CXSANWNPQKKNJO-UHFFFAOYSA-N n-[2-(diethylamino)ethyl]prop-2-enamide Chemical compound CCN(CC)CCNC(=O)C=C CXSANWNPQKKNJO-UHFFFAOYSA-N 0.000 description 1
- DCBBWYIVFRLKCD-UHFFFAOYSA-N n-[2-(dimethylamino)ethyl]-2-methylprop-2-enamide Chemical compound CN(C)CCNC(=O)C(C)=C DCBBWYIVFRLKCD-UHFFFAOYSA-N 0.000 description 1
- WDQKICIMIPUDBL-UHFFFAOYSA-N n-[2-(dimethylamino)ethyl]prop-2-enamide Chemical compound CN(C)CCNC(=O)C=C WDQKICIMIPUDBL-UHFFFAOYSA-N 0.000 description 1
- GFOCCLOYMMHTIU-UHFFFAOYSA-N n-[3-(diethylamino)propyl]prop-2-enamide Chemical compound CCN(CC)CCCNC(=O)C=C GFOCCLOYMMHTIU-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、感光性ポリイミド前駆
体組成物に関するものであり、さらに詳しくは、ネガ
型、ポジ型ともに適用可能な感光性ポリイミド前駆体組
成物に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photosensitive polyimide precursor composition, and more particularly to a photosensitive polyimide precursor composition applicable to both a negative type and a positive type.
【0002】[0002]
【従来の技術】露光した部分が現像により残るネガ型の
感光性ポリイミド前駆体組成物としては次のものが知ら
れていた。2. Description of the Related Art The following is known as a negative photosensitive polyimide precursor composition in which an exposed portion remains after development.
【0003】(a)ポリアミド酸に化学線により2量化
又は重合可能な炭素−炭素二重結合およびアミノ基又は
その四級化塩を添加した組成物(例えば特公昭59−5
2822号公報)。(A) A composition in which a polyamic acid is added with a carbon-carbon double bond dimerizable or polymerizable by actinic radiation and an amino group or a quaternized salt thereof (for example, Japanese Patent Publication No. 59-5).
2822).
【0004】(b)ポリアミド酸と不飽和二重結合を有
するイソシアネ−ト化合物との感光性付加物(例えば特
開昭63−226639号公報、特開昭63−2266
40号公報、G.C.Davis :ACS Symp.Ser.,242(1984)25
9. )。(B) Photosensitive adducts of polyamic acid and an isocyanate compound having an unsaturated double bond (for example, JP-A-63-226639 and JP-A-63-2266).
40, GCDavis: ACS Symp. Ser., 242 (1984) 25.
9.).
【0005】(c)炭素−炭素二重結合基を有するポリ
イミド前駆体と、特定のオキシム化合物と、増感剤を含
有してなる組成物(例えば特開昭61−118423号
公報、特開昭62−184056号公報、特開昭62−
273259号公報)。(C) A composition containing a polyimide precursor having a carbon-carbon double bond group, a specific oxime compound, and a sensitizer (for example, JP-A-61-118423 and JP-A-61-184423). 62-184056, JP-A-62-1
273259).
【0006】またポジ型の感光性ポリイミド組成物とし
ては、次のものが知られていた。The following have been known as positive-type photosensitive polyimide compositions.
【0007】(d)ポリアミド酸にエステル基で光分解
性の感光性を導入した感光性ポリイミド前駆体(例えば
特開平01−61747号公報)。(D) A photosensitive polyimide precursor obtained by introducing photodegradable photosensitivity into a polyamic acid by an ester group (for example, JP-A No. 01-61747).
【0008】(d)特定の構造のポリアミド酸に特定の
構造のナフトキノンジアジド化合物を添加し、露光後に
特定の温度範囲で熱処理し、形成した感光性ポリイミド
前駆体(例えば、高分子学会予稿集、40巻、3号、8
21(1991))。(D) A photosensitive polyimide precursor formed by adding a naphthoquinonediazide compound having a specific structure to a polyamic acid having a specific structure and subjecting it to a heat treatment after exposure in a specific temperature range (for example, Proceedings of the Polymer Society of Japan, Volume 40, Issue 3, 8
21 (1991)).
【0009】しかしながら、これらは、いずれも、ネガ
型、ポジ型どちらかの機能しか有しておらず、同一組成
物でネガ型、ポジ型ともに機能を有する感光性ポリイミ
ド前駆体組成物については、全く知られていなかった。However, each of these has only a negative type or positive type function, and a photosensitive polyimide precursor composition having both negative type and positive type functions with the same composition is as follows: Not known at all.
【0010】[0010]
【発明が解決しようとする課題】本発明は、製造方法が
容易で、かつネガ型としても、ポジ型としても性能が優
れた感光性ポリイミド前駆体組成物を提供することを目
的とするものである。SUMMARY OF THE INVENTION It is an object of the present invention to provide a photosensitive polyimide precursor composition which is easy to manufacture and has excellent performance as a negative type and a positive type. is there.
【0011】[0011]
【課題を解決するための手段】本発明の目的は、 (a)一般式(1)で表される構造単位を主成分とする
ポリマ(A)、The object of the present invention is: (a) a polymer (A) containing a structural unit represented by the general formula (1) as a main component,
【化3】 (ただし、式中R1 は少なくとも2個の炭素原子を有す
る3価または4価の有機基、R2 は少なくとも2個の炭
素原子を有する2価の有機基、R3 は水素、アルカリ金
属イオン、アンモニウムイオンまたは炭素数1〜30の
有機基を表す。nは1または2である。) (b)一般式(2)で表される化合物(B)、および[Chemical 3] (Wherein R 1 is a trivalent or tetravalent organic group having at least 2 carbon atoms, R 2 is a divalent organic group having at least 2 carbon atoms, R 3 is hydrogen, an alkali metal ion Represents an ammonium ion or an organic group having 1 to 30 carbon atoms, n is 1 or 2.) (b) A compound (B) represented by the general formula (2), and
【化4】 (ただし、式中、Y1 、Y2 は、それぞれ−O−または
−NH−基を示す。R4は水素または炭素数1〜10の
低級アルキル基、R5 は置換または無置換の炭化水素
基、R6 は置換または無置換の炭素数1〜10の炭化水
素基を表す。) (c)光開始剤および/または増感剤および/または光
反応性モノマを含有することを特徴とする感光性ポリイ
ミド前駆体組成物により達成される。[Chemical 4] (In the formula, Y 1 and Y 2 each represent an —O— or —NH— group. R 4 is hydrogen or a lower alkyl group having 1 to 10 carbon atoms, and R 5 is a substituted or unsubstituted hydrocarbon. The group R 6 represents a substituted or unsubstituted hydrocarbon group having 1 to 10 carbon atoms.) (C) A photoinitiator and / or a sensitizer and / or a photoreactive monomer are contained. Achieved by a photosensitive polyimide precursor composition.
【0012】本発明における一般式(1)で表される構
造単位を主成分とするポリマ(A)とは、加熱あるいは
適当な触媒により、イミド環や、その他の環状構造を有
するポリマ(以後、ポリイミド系ポリマという)となり
得るものである。The polymer (A) having a structural unit represented by the general formula (1) as a main component in the present invention means a polymer having an imide ring or other cyclic structure (hereinafter referred to as "polymer") by heating or a suitable catalyst. Polyimide-based polymer).
【0013】上記一般式(1)中、R1 は少なくとも2
個の炭素原子を有する3価または4価の有機基である。
耐熱性の面から、R1 は芳香族環または芳香族複素環を
含有し、かつ、炭素数6〜30の3価または4価の基が
好ましい。具体的には、フェニル基、ビフェニル基、タ
ーフェニル基、ナフタレン基、ペリレン基、ジフェニル
エーテル基、ジフェニルスルホン基、ジフェニルプロパ
ン基、ベンゾフェノン基、ビフェニルトリフルオロプロ
パン基などが挙げられるが、これらに限定されない。In the general formula (1), R 1 is at least 2
A trivalent or tetravalent organic group having 4 carbon atoms.
From the viewpoint of heat resistance, R 1 is preferably a trivalent or tetravalent group containing an aromatic ring or an aromatic heterocycle and having 6 to 30 carbon atoms. Specific examples thereof include, but are not limited to, a phenyl group, a biphenyl group, a terphenyl group, a naphthalene group, a perylene group, a diphenyl ether group, a diphenyl sulfone group, a diphenylpropane group, a benzophenone group, and a biphenyltrifluoropropane group. .
【0014】上記一般式(1)中、R2 は少なくとも2
個の炭素原子を有する2価の有機基であるが、耐熱性の
面から、R2 は芳香族環または芳香族複素環を含有し、
かつ炭素数6〜30の2価の基が好ましい。具体的に
は、フェニル基、ビフェニル基、ターフェニル基、ナフ
タレン基、ペリレン基、ジフェニルエーテル基、ジフェ
ニルスルホン基、ジフェニルプロパン基、ベンゾフェノ
ン基、ビフェニルトリフルオロプロパン基などが挙げら
れるが、これらに限定されない。In the above general formula (1), R 2 is at least 2
Although it is a divalent organic group having 4 carbon atoms, R 2 contains an aromatic ring or an aromatic heterocycle from the viewpoint of heat resistance,
Moreover, a divalent group having 6 to 30 carbon atoms is preferable. Specific examples thereof include, but are not limited to, a phenyl group, a biphenyl group, a terphenyl group, a naphthalene group, a perylene group, a diphenyl ether group, a diphenyl sulfone group, a diphenylpropane group, a benzophenone group, and a biphenyltrifluoropropane group. .
【0015】さらに、基板との接着性を向上させるため
に、耐熱性を低下させない範囲でR1 、R2 にシロキサ
ン構造を有する脂肪族の基を共重合してもよい。具体的
には、ジアミン成分として、ビス(3−アミノプロピ
ル)テトラメチルジシロキサンなどを1〜10モル%共
重合したものなどがあげられる。Further, in order to improve the adhesiveness to the substrate, R 1 and R 2 may be copolymerized with an aliphatic group having a siloxane structure within a range that does not lower the heat resistance. Specific examples of the diamine component include those obtained by copolymerizing bis (3-aminopropyl) tetramethyldisiloxane with 1 to 10 mol%.
【0016】R3 は水素、アルカリ金属イオン、アンモ
ニウムイオン、または炭素数1〜30の有機基を表す。
R3 の好ましい具体例としては、水素、メチル基、エチ
ル基、イソプロピル基、ブチル基、メタクリル酸エチル
基、アクリル酸エチル基、o−ニトロベンジル基などが
挙げられるが、これらに限定されない。特に、R3 とし
ては、水素が好ましい。R 3 represents hydrogen, an alkali metal ion, an ammonium ion, or an organic group having 1 to 30 carbon atoms.
Preferable specific examples of R 3 include, but are not limited to, hydrogen, methyl group, ethyl group, isopropyl group, butyl group, ethyl methacrylate group, ethyl acrylate group, o-nitrobenzyl group and the like. Particularly, R 3 is preferably hydrogen.
【0017】ポリマ(A)は、R1 、R2 、R3 がこれ
らのうち各々1種から構成されていても良いし、各々2
種以上から構成される共重合体であつてもよい。In the polymer (A), R 1 , R 2 and R 3 may each be composed of one kind, or each of them may be 2 kinds.
It may be a copolymer composed of one or more species.
【0018】ポリマ(A)は、一般式(1)で表される
構造単位のみからなるものであっても良いし、他の構造
単位との共重合体あるいはブレンド体であっても良い。
その際、一般式(1)で表される構造単位を90モル%
以上含有していることが好ましい。共重合あるいはブレ
ンドに用いられる構造単位の種類および量は最終加熱処
理によって得られるポリイミド系ポリマの耐熱性を損な
わない範囲で選択することが好ましい。The polymer (A) may be composed of only the structural unit represented by the general formula (1), or may be a copolymer or a blend with another structural unit.
At that time, the structural unit represented by the general formula (1) is 90 mol%
It is preferable to contain the above. The type and amount of structural units used for copolymerization or blending are preferably selected within a range that does not impair the heat resistance of the polyimide-based polymer obtained by the final heat treatment.
【0019】ポリマ(A)の具体的な例として、ピロメ
リット酸二無水物と4,4´−ジアミノジフェニルエー
テル、3,3´,4,4´−ベンゾフェノンテトラカル
ボン酸二無水物と4,4´−ジアミノジフェニルエーテ
ル、3,3´,4,4´−ビフェニルテトラカルボン酸
二無水物と4,4´−ジアミノジフェニルエーテル、
3,3´,4,4´−ビフェニルトリフルオロプロパン
テトラカルボン酸二無水物と4,4´−ジアミノジフェ
ニルエーテル、3,3´,4,4´−ビフェニルスルホ
ンテトラカルボン酸二無水物と4,4´−ジアミノジフ
ェニルエーテル、ピロメリット酸二無水物と3,3´−
(または4,4´)ジアミノジフェニルスルホン、3,
3´,4,4´−ベンゾフェノンテトラカルボン酸二無
水物と3,3´−(または4,4´)ジアミノジフェニ
ルスルホン、3,3´,4,4´−ビフェニルテトラカ
ルボン酸二無水物と3,3´−(または4,4´)ジア
ミノジフェニルスルホン、ピロメリット酸二無水物と
4,4´−ジアミノジフェニルスルフィド、3,3´,
4,4´−ベンゾフェノンテトラカルボン酸二無水物と
4,4´−ジアミノジフェニルスルフィド、3,3´,
4,4´−ビフェニルテトラカルボン酸二無水物と4,
4´−ジアミノジフェニルスルフィド、3,3´,4,
4´−ベンゾフェノンテトラカルボン酸二無水物とパラ
フェニレンジアミン、3,3´,4,4´−ビフェニル
テトラカルボン酸二無水物とパラフェニレンジアミン、
3,3´,4,4´−ジフェニルエーテルテトラカルボ
ン酸二無水物とパラフェニレンジアミン、3,3´,
4,4´−ビフェニルトリフルオロプロパンテトラカル
ボン酸二無水物とパラフェニレンジアミン、3,3´,
4,4´−ビフェニルテトラカルボン酸二無水物とター
フェニルジアミン、3,3´,4,4´−ビフェニルテ
トラカルボン酸二無水物および3,3´,4,4´−ベ
ンゾフェノンテトラカルボン酸二無水物とパラフェニレ
ンジアミン、ピロメリット酸二無水物および3,3´,
4,4´−ベンゾフェノンテトラカルボン酸二無水物と
3,3´−(または4,4´)ジアミノジフェニルエー
テル、ピロメリット酸二無水物および3,3´,4,4
´−ビフェニルテトラカルボン酸二無水物とパラフェニ
レンジアミン、3,3´,4,4´−ベンゾフェノンテ
トラカルボン酸二無水物と4,4´−ジアミノジフェニ
ルエーテルおよびビス(3−アミノプロピル)テトラメ
チルジシロキサン、ピロメリット酸二無水物と4,4´
−ジアミノジフェニルエーテルおよびビス(3−アミノ
プロピル)テトラメチルジシロキサン、3,3´,4,
4´−ビフェニルテトラカルボン酸二無水物と4,4´
−ジアミノジフェニルエーテルおよびビス(3−アミノ
プロピル)テトラメチルジシロキサン、などから合成さ
れたポリアミド酸およびそのエステル化合物が挙げられ
るが、これらに限定されない。Specific examples of the polymer (A) include pyromellitic dianhydride, 4,4'-diaminodiphenyl ether, 3,3 ', 4,4'-benzophenone tetracarboxylic dianhydride and 4,4. ′ -Diaminodiphenyl ether, 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride and 4,4′-diaminodiphenyl ether,
3,3 ', 4,4'-biphenyltrifluoropropane tetracarboxylic dianhydride and 4,4'-diaminodiphenyl ether, 3,3', 4,4'-biphenylsulfone tetracarboxylic dianhydride and 4, 4'-diaminodiphenyl ether, pyromellitic dianhydride and 3,3'-
(Or 4,4 ') diaminodiphenyl sulfone, 3,
3 ', 4,4'-benzophenone tetracarboxylic dianhydride and 3,3'-(or 4,4 ') diaminodiphenyl sulfone, 3,3', 4,4'-biphenyl tetracarboxylic dianhydride 3,3 ′-(or 4,4 ′) diaminodiphenyl sulfone, pyromellitic dianhydride and 4,4′-diaminodiphenyl sulfide, 3,3 ′,
4,4'-benzophenone tetracarboxylic acid dianhydride and 4,4'-diaminodiphenyl sulfide, 3,3 ',
4,4'-biphenyltetracarboxylic dianhydride and 4,
4'-diaminodiphenyl sulfide, 3,3 ', 4
4'-benzophenone tetracarboxylic dianhydride and paraphenylenediamine, 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride and paraphenylenediamine,
3,3 ′, 4,4′-diphenyl ether tetracarboxylic dianhydride and paraphenylenediamine, 3,3 ′,
4,4′-biphenyltrifluoropropanetetracarboxylic dianhydride and paraphenylenediamine, 3,3 ′,
4,4'-biphenyltetracarboxylic dianhydride and terphenyldiamine, 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride and 3,3', 4,4'-benzophenonetetracarboxylic dianhydride Anhydrous and para-phenylenediamine, pyromellitic dianhydride and 3,3 ',
4,4'-benzophenone tetracarboxylic dianhydride and 3,3 '-(or 4,4') diaminodiphenyl ether, pyromellitic dianhydride and 3,3 ', 4,4
′ -Biphenyltetracarboxylic dianhydride and paraphenylenediamine, 3,3 ′, 4,4′-benzophenone tetracarboxylic dianhydride and 4,4′-diaminodiphenyl ether and bis (3-aminopropyl) tetramethyldiamine Siloxane, pyromellitic dianhydride and 4,4 '
-Diaminodiphenyl ether and bis (3-aminopropyl) tetramethyldisiloxane, 3,3 ', 4
4'-biphenyltetracarboxylic dianhydride and 4,4 '
Examples include, but are not limited to, polyamic acid and its ester compounds synthesized from diaminodiphenyl ether and bis (3-aminopropyl) tetramethyldisiloxane.
【0020】これらのポリアミド酸およびそのエステル
化物は公知の方法によって合成される。すなわち、ポリ
アミド酸の場合はテトラカルボン酸二無水物とジアミン
を選択的に組み合わせ、有機極性溶媒中で重合反応させ
ることにより合成される。ここで有機極性溶媒とは、エ
チレン性不飽和二重結合を有しないアミド類、環状アミ
ド類、ラクトン類、N,N−ジアルキルスルホン類、
N,N−ジアルキルスルホキシド類をいう。N,N−ジ
アルキルカルボキシルアミド類、N−アルキルカルボキ
シルアミド類、環状アミド類、ラクトン類で低分子量の
もので、通常液体であるものが好ましい。具体的な例と
して、N,N−ジメチルホルムアミド、N,N−ジメチ
ルアセトアミド、N,N−ジエチルホルムアミド、N,
N−ジエチルアセトアミド、N,N−ジメトキシアセト
アミド、N−メチル−2−ピロリドン、N−メチルカプ
ロラクタム、N−アセチル−2−ピロリドン、γ−ブチ
ロラクトン、N,N−ジメチルスルホン、N,N−ジメ
チルスルホキシド、ヘキサメチルホスホルアミド,2−
ピロリドンなどをあげることができるが、これらに限定
されない。これらの有機極性溶媒は単独もしくは二種以
上の混合物として使用される。また他の有機溶媒、例え
ば、キシレン、アセトン、エタノール、メタノール、メ
チルセロソルブ、エチルセロソルブ、ジグライム、2−
ヒドロキシエチルメタクリレ−トなどとの混合物として
使用される。These polyamic acids and their esterified products are synthesized by known methods. That is, in the case of a polyamic acid, it is synthesized by selectively combining a tetracarboxylic dianhydride and a diamine and performing a polymerization reaction in an organic polar solvent. Here, the organic polar solvent means amides having no ethylenically unsaturated double bond, cyclic amides, lactones, N, N-dialkyl sulfones,
Refers to N, N-dialkyl sulfoxides. N, N-dialkylcarboxylamides, N-alkylcarboxylamides, cyclic amides and lactones having a low molecular weight and usually liquid are preferable. As specific examples, N, N-dimethylformamide, N, N-dimethylacetamide, N, N-diethylformamide, N,
N-diethylacetamide, N, N-dimethoxyacetamide, N-methyl-2-pyrrolidone, N-methylcaprolactam, N-acetyl-2-pyrrolidone, γ-butyrolactone, N, N-dimethylsulfone, N, N-dimethylsulfoxide , Hexamethylphosphoramide, 2-
Examples thereof include, but are not limited to, pyrrolidone. These organic polar solvents are used alone or as a mixture of two or more kinds. Further, other organic solvents such as xylene, acetone, ethanol, methanol, methyl cellosolve, ethyl cellosolve, diglyme, 2-
Used as a mixture with hydroxyethyl methacrylate and the like.
【0021】ポリアミド酸のエステル化物は例えば、特
開昭61−72022号公報、特公昭55−30207
号公報に記載されている方法などで合成される。Examples of esterification products of polyamic acid include those disclosed in JP-A-61-272022 and JP-B-55-30207.
It is synthesized by the method described in the publication.
【0022】本発明においては、一般式(2)で表され
る化合物(B)を必須成分として含む。In the present invention, the compound (B) represented by the general formula (2) is contained as an essential component.
【0023】[0023]
【化5】 一般式(2)において、Y1 、Y2 は、それぞれ−O−
または−NH−基を示す。R4 は水素または炭素数1〜
10の低級アルキル基、R5 は置換または無置換の炭化
水素基、R6 は置換または無置換の炭素数1〜10の炭
化水素基を表す。ここで、置換基としては、アミノ基、
アミド基、水酸基、カルボニル基、カルボキシル基、シ
アノ基などが挙げられるがこれらに限定されない。[Chemical 5] In the general formula (2), Y 1 and Y 2 are each —O—
Or a -NH- group is shown. R 4 is hydrogen or 1 to 1 carbon atoms
10 is a lower alkyl group, R 5 is a substituted or unsubstituted hydrocarbon group, and R 6 is a substituted or unsubstituted hydrocarbon group having 1 to 10 carbon atoms. Here, as the substituent, an amino group,
Examples thereof include amide group, hydroxyl group, carbonyl group, carboxyl group, and cyano group, but are not limited thereto.
【0024】R4 の炭素数1〜10の低級アルキル基と
しては、メチル基、エチル基、プロピル基、ブチル基、
ペンチル基などが挙げられるがこれらに限定されない。
R5、は置換または無置換の炭化水素基で、炭素数1〜
10の化合物が好ましい。炭化水素基としては、メチレ
ン基、エチレン基、プロピレン基、ブチレン基、ヘキサ
メチレン基、などが挙げられるがこれらに限定されな
い。R6 は置換または無置換の炭素数1〜10の炭化水
素基で、メチル基、エチル基、プロピル基、ブチル基、
ペンチル基、シクロヘキシル基、フェニル基、ベンジル
基などが挙げられるがこれらに限定されない。Examples of the lower alkyl group having 1 to 10 carbon atoms for R 4 include methyl group, ethyl group, propyl group, butyl group,
Examples include, but are not limited to, a pentyl group.
R 5, is a substituted or unsubstituted hydrocarbon group, 1 to carbon atoms
10 compounds are preferred. Examples of the hydrocarbon group include, but are not limited to, a methylene group, an ethylene group, a propylene group, a butylene group, a hexamethylene group, and the like. R 6 is a substituted or unsubstituted hydrocarbon group having 1 to 10 carbon atoms, such as a methyl group, an ethyl group, a propyl group, a butyl group,
Examples thereof include, but are not limited to, a pentyl group, a cyclohexyl group, a phenyl group and a benzyl group.
【0025】化合物(B)の具体的な例として、1−メ
チル−3−(2−メタクリロイルオキシエチル)ウレ
ア、1−エチル−3−(2−メタクリロイルオキシエチ
ル)ウレア、1−プロピル−3−(2−メタクリロイル
オキシエチル)ウレア、1−ブチル−3−(2−メタク
リロイルオキシエチル)ウレア、1−ペンチル−3−
(2−メタクリロイルオキシエチル)ウレア、シクロヘ
キシル−3−(2−メタクリロイルオキシエチル)ウレ
ア、1−ベンジル−3−(2−メタクリロイルオキシエ
チル)ウレア、1−メチル−3−(2−メタクリロイル
オキシプロピル)ウレア、1−エチル−3−(2−メタ
クリロイルオキシプロピル)ウレア、1−プロピル−3
−(2−メタクリロイルオキシプロピル)ウレア、1−
ブチル−3−(2−メタクリロイルオキシプロピル)ウ
レア、1−ペンチル−3−(2−メタクリロイルオキシ
プロピル)ウレア、シクロヘキシル−3−(2−メタク
リロイルオキシプロピル)ウレア、1−ベンジル−3−
(2−メタクリロイルオキシプロピル)ウレア、1−フ
ェニル−3−(2−メタクリロイルオキシプロピル)ウ
レア、メチルN−(2−メタクリロイルオキシエチル)
ウレタン、エチルN−(2−メタクリロイルオキシエチ
ル)ウレタン、プロピルN−(2−メタクリロイルオキ
シエチル)ウレタン、ブチルN−(2−メタクリロイル
オキシエチル)ウレタン、ペンチルN−(2−メタクリ
ロイルオキシエチル)ウレタン、シクロヘキシルN−
(2−メタクリロイルオキシエチル)ウレタン、ベンジ
ルN−(2−メタクリロイルオキシエチル)ウレタン、
メチルN−(2−メタクリロイルオキシプロピル)ウレ
タン、エチルN−(2−メタクリロイルオキシプロピ
ル)ウレタン、プロピルN−(2−メタクリロイルオキ
シプロピル)ウレタン、ブチルN−(2−メタクリロイ
ルオキシプロピル)ウレタン、ペンチルN−(2−メタ
クリロイルオキシプロピル)ウレタン、シクロヘキシル
N−(2−メタクリロイルオキシプロピル)ウレタン、
ベンジルN−(2−メタクリロイルオキシプロピル)ウ
レタン、フェニルN−(2−メタクリロイルオキシプロ
ピル)ウレタン、ジメチルアミノエチルN−(2−メタ
クリロイルオキシエチル)ウレタン、ジメチルアミノエ
チルN−(2−メタクリロイルオキシプロピル)ウレタ
ン、ジエチルアミノエチルN−(2−メタクリロイルオ
キシエチル)ウレタン、ジエチルアミノエチルN−(2
−メタクリロイルオキシプロピル)ウレタン、および上
記、メタクリロイル基をアクリロイル基に変えたものな
どが挙げられるがこれらに限定されない。特にメタクリ
ル基を有する化合物が感度の面で望ましい。これらの化
合物(B)は単独もしくは2種以上の混合物として使用
される。Specific examples of the compound (B) include 1-methyl-3- (2-methacryloyloxyethyl) urea, 1-ethyl-3- (2-methacryloyloxyethyl) urea, 1-propyl-3-. (2-methacryloyloxyethyl) urea, 1-butyl-3- (2-methacryloyloxyethyl) urea, 1-pentyl-3-
(2-methacryloyloxyethyl) urea, cyclohexyl-3- (2-methacryloyloxyethyl) urea, 1-benzyl-3- (2-methacryloyloxyethyl) urea, 1-methyl-3- (2-methacryloyloxypropyl) Urea, 1-ethyl-3- (2-methacryloyloxypropyl) urea, 1-propyl-3
-(2-methacryloyloxypropyl) urea, 1-
Butyl-3- (2-methacryloyloxypropyl) urea, 1-pentyl-3- (2-methacryloyloxypropyl) urea, cyclohexyl-3- (2-methacryloyloxypropyl) urea, 1-benzyl-3-
(2-methacryloyloxypropyl) urea, 1-phenyl-3- (2-methacryloyloxypropyl) urea, methyl N- (2-methacryloyloxyethyl)
Urethane, ethyl N- (2-methacryloyloxyethyl) urethane, propyl N- (2-methacryloyloxyethyl) urethane, butyl N- (2-methacryloyloxyethyl) urethane, pentyl N- (2-methacryloyloxyethyl) urethane, Cyclohexyl N-
(2-methacryloyloxyethyl) urethane, benzyl N- (2-methacryloyloxyethyl) urethane,
Methyl N- (2-methacryloyloxypropyl) urethane, ethyl N- (2-methacryloyloxypropyl) urethane, propyl N- (2-methacryloyloxypropyl) urethane, butyl N- (2-methacryloyloxypropyl) urethane, pentyl N -(2-methacryloyloxypropyl) urethane, cyclohexyl N- (2-methacryloyloxypropyl) urethane,
Benzyl N- (2-methacryloyloxypropyl) urethane, phenyl N- (2-methacryloyloxypropyl) urethane, dimethylaminoethyl N- (2-methacryloyloxyethyl) urethane, dimethylaminoethyl N- (2-methacryloyloxypropyl) Urethane, diethylaminoethyl N- (2-methacryloyloxyethyl) urethane, diethylaminoethyl N- (2
-Methacryloyloxypropyl) urethane, and those in which the methacryloyl group is changed to an acryloyl group, but not limited thereto. Particularly, a compound having a methacryl group is desirable in terms of sensitivity. These compounds (B) are used alone or as a mixture of two or more.
【0026】化合物(B)はポリマの全構成単位の20
%、好ましくは50%に相当する当量以上で、かつポリ
マ中の全カルボキシル基の当量の5倍以下の割合で、混
合されているのが望ましい。この範囲をはずれると感度
が悪くなったり、現像への制約が多くなる。The compound (B) is 20% of all the constitutional units of the polymer.
%, Preferably 50% or more, and more preferably 5 times or less the equivalent of all the carboxyl groups in the polymer. If it deviates from this range, the sensitivity will be deteriorated and there will be many restrictions on development.
【0027】本発明の組成物は光開始剤および/または
増感剤および/または光反応性モノマを含有する。The composition of the present invention contains a photoinitiator and / or a sensitizer and / or a photoreactive monomer.
【0028】光開始剤としてはミヒラーズケトン、4,
4´−ジエチルアミノベンゾフェノン、N−フェニルジ
エタノールアミン、N−フェニルグリシンなど芳香族ア
ミン化合物、1−フェニルプロパンジオン−2−(O−
エトキシカルボニル)オキシム、1−フェニル−1、2
−ブタンジオン−2−(O−メトキシカルボニル)オキ
シム、1−フェニルプロパンジオン−2−(O−ベンゾ
イル)オキシム、1−2−ジフェニル−エタンジオン−
1−(O−ベンゾイル)オキシム、に代表される鎖状オ
キシムエステル化合物、3−フェニル−5−イソオキサ
ゾロンに代表される環状オキシムエステル化合物が有効
であるがこれらに限定されない。特にオキシムエステル
化合物が感度面で望ましい。これらの光開始剤は単独も
しくは2種以上の混合物として使用される。As the photoinitiator, Michler's ketone, 4,
Aromatic amine compounds such as 4'-diethylaminobenzophenone, N-phenyldiethanolamine, N-phenylglycine, 1-phenylpropanedione-2- (O-
(Ethoxycarbonyl) oxime, 1-phenyl-1,2
-Butanedione-2- (O-methoxycarbonyl) oxime, 1-phenylpropanedione-2- (O-benzoyl) oxime, 1-2-diphenyl-ethanedione-
A chain oxime ester compound typified by 1- (O-benzoyl) oxime and a cyclic oxime ester compound typified by 3-phenyl-5-isoxazolone are effective, but not limited thereto. Particularly, an oxime ester compound is desirable in terms of sensitivity. These photoinitiators are used alone or as a mixture of two or more kinds.
【0029】光開始剤の量はポリマに対して1重量%〜
100重量%、好ましくは2重量%〜50重量%混合さ
れているのが望ましい。この範囲をはずれると感度が悪
くなったり、現像への制約が多くなる。The amount of photoinitiator is from 1% by weight to the polymer.
It is desirable that 100% by weight, preferably 2 to 50% by weight, is mixed. If it deviates from this range, the sensitivity will be deteriorated and there will be many restrictions on development.
【0030】増感剤としてはミヒラーズケトン、4,4
´−ジエチルアミノベンゾフェノン、3,3´−カルボ
ニルビス(ジエチルアミノクマリン)、コダック社
(株)の“クマリン”339、“クマリン”338、
“クマリン”314、“クマリン”7などが有効である
が、これらに限定されない。とくにクマリン化合物が感
度面で望ましい。これらの増感剤は単独もしくは2種以
上の混合物として使用される。As the sensitizer, Michler's ketone, 4,4
′ -Diethylaminobenzophenone, 3,3′-carbonylbis (diethylaminocoumarin), “Coumarin” 339, “Coumarin” 338, manufactured by Kodak Corporation.
"Coumarin" 314, "coumarin" 7 and the like are effective, but are not limited thereto. Coumarin compounds are particularly desirable in terms of sensitivity. These sensitizers are used alone or as a mixture of two or more kinds.
【0031】増感剤の量はポリマに対して0.1重量%
〜20重量%、好ましくは0.2重量%〜10重量%混
合されているのが望ましい。The amount of sensitizer is 0.1% by weight based on the polymer.
It is desirable that they are mixed in an amount of ˜20% by weight, preferably 0.2% by weight to 10% by weight.
【0032】光反応性モノマとしては、アミノアクリレ
ート化合物および/またはアミノアクリルアミド化合物
などが有効であり、これらの光反応性モノマを添加する
と、さらに感光性能が向上する。As the photoreactive monomer, an amino acrylate compound and / or an aminoacrylamide compound is effective, and the addition of these photoreactive monomers further improves the photosensitivity.
【0033】アミノアクリレート化合物の具体的な例と
して、メタクリル酸ジメチルアミノエチル、メタクリル
酸ジエチルアミノエチル、メタクリル酸ジメチルアミノ
プロピル、メタクリル酸ジエチルアミノプロピル、メタ
クリル酸第3ブチルアミノエチル、メタクリル酸ジメチ
ルアミノ−2−ヒドロキシプロピル、アクリル酸ジメチ
ルアミノエチル、アクリル酸ジエチルアミノエチル、ア
クリル酸ジメチルアミノプロピル、アクリル酸ジエチル
アミノプロピル、などが挙げられるがこれらに限定され
ない。Specific examples of the amino acrylate compound include dimethylaminoethyl methacrylate, diethylaminoethyl methacrylate, dimethylaminopropyl methacrylate, diethylaminopropyl methacrylate, tert-butylaminoethyl methacrylate and dimethylamino-2-methacrylate. Examples include, but are not limited to, hydroxypropyl, dimethylaminoethyl acrylate, diethylaminoethyl acrylate, dimethylaminopropyl acrylate, diethylaminopropyl acrylate, and the like.
【0034】アミノアクリルアミド化合物の具体的な例
として、N、N−ジメチルアミノエチルメタクリルアミ
ド、N、N−ジメチルアミノプロピルメタクリルアミ
ド、N、N−ジエチルアミノエチルメタクリルアミド、
N、N−ジエチルアミノプロピルメタクリルアミド、
N、N−ジメチルアミノエチルアクリルアミド、N、N
−ジメチルアミノプロピルアクリルアミド、N、N−ジ
エチルアミノエチルアクリルアミド、N、N−ジエチル
アミノプロピルアクリルアミド、などが挙げられるがこ
れらに限定されない。Specific examples of the aminoacrylamide compound include N, N-dimethylaminoethyl methacrylamide, N, N-dimethylaminopropyl methacrylamide, N, N-diethylaminoethyl methacrylamide,
N, N-diethylaminopropylmethacrylamide,
N, N-dimethylaminoethylacrylamide, N, N
-Dimethylaminopropyl acrylamide, N, N-diethylaminoethyl acrylamide, N, N-diethylaminopropyl acrylamide and the like, but not limited to.
【0035】アミノアクリレート化合物および/または
アミノアクリルアミド化合物はポリマの全構成単位の1
%、好ましくは5%に相当する当量以上で、かつポリマ
中の全カルボキシル基の当量の5倍以下の割合で混合さ
れていることが望ましい。The amino acrylate compound and / or amino acrylamide compound is one of all constitutional units of the polymer.
%, Preferably 5% or more and more preferably 5 times or less of the equivalents of all carboxyl groups in the polymer.
【0036】また、上記以外の光反応性モノマとして、
2−ヒドロキシエチルメタクリレート、トリメチロール
プロパントリアクリレート、トリメチロールプロパント
リメタクリレート、エチレングリコールジメタクリレー
トなどのモノマをポリマに対して1重量%〜20重量
%、添加するとさらに感度の向上が期待できる。As the photoreactive monomer other than the above,
Further improvement in sensitivity can be expected by adding a monomer such as 2-hydroxyethyl methacrylate, trimethylolpropane triacrylate, trimethylolpropane trimethacrylate, or ethylene glycol dimethacrylate in an amount of 1 to 20% by weight based on the polymer.
【0037】上記のポリマ(A)、化合物(B)、およ
び、光開始剤および/または増感剤および/または光反
応性モノマを溶媒と混合することにより感光性ポリイミ
ド前駆体組成物を得る。このとき用いられる溶媒として
は、N−メチル−2−ピロリドン、N,N−ジメチルア
セトアミド、N,N−ジメチルホルムアミド、ジメチル
スルホオキシド、などを主成分とする極性溶媒や、γ−
ブチロラクトン、水などの溶媒が単独もしくは二種以上
の混合物として好ましく用いられるが、これらに限定さ
れない。A photosensitive polyimide precursor composition is obtained by mixing the above-mentioned polymer (A), compound (B), and photoinitiator and / or sensitizer and / or photoreactive monomer with a solvent. As the solvent used at this time, a polar solvent containing N-methyl-2-pyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide, dimethyl sulfoxide, or the like as a main component, or γ-
Solvents such as butyrolactone and water are preferably used alone or as a mixture of two or more kinds, but are not limited thereto.
【0038】また、必要に応じ、上記の前駆体組成物に
基板との濡れ性を向上させる界面活性剤や、SiO2 ,
TiO2 などの無機粒子、あるいはポリイミドの粒子を
添加してもよい。If necessary, the above precursor composition may be added with a surfactant for improving the wettability with the substrate, SiO 2 ,
Inorganic particles such as TiO 2 or particles of polyimide may be added.
【0039】次に本発明の感光性ポリイミド前駆体組成
物を用いて、ポリイミドパタ−ンを形成する方法につい
て説明する。Next, a method for forming a polyimide pattern using the photosensitive polyimide precursor composition of the present invention will be described.
【0040】該感光性ポリイミド前駆体組成物を基板上
に塗布する。基板としてはシリコン、アルミナセラミッ
ク、ガラスセラミック、窒化アルミ、半導体を形成した
基板などが用いられるが、これらに限定されない。塗布
方法としてはスピンナーを用いた回転塗布、スプレー塗
布、浸漬、ロールコーティングなどの方法があげられる
が、これらに限定されない。また、塗布膜厚は、塗布手
段、組成物の固形分濃度、粘度等によって異なるが、通
常、乾燥後の膜厚が、0.1〜150μmになるように
塗布される。The photosensitive polyimide precursor composition is coated on a substrate. The substrate may be, but is not limited to, silicon, alumina ceramic, glass ceramic, aluminum nitride, a semiconductor-formed substrate, or the like. Examples of the coating method include, but are not limited to, spin coating using a spinner, spray coating, dipping, and roll coating. Although the coating film thickness varies depending on the coating means, the solid content concentration of the composition, the viscosity, etc., it is usually coated so that the film thickness after drying will be 0.1 to 150 μm.
【0041】次にポリイミド前駆体組成物を塗布した基
板を乾燥して、ポリイミド前駆体組成物被膜を得る。乾
燥は、オーブン、ホットプレート、赤外線などを使用
し、50〜100℃の範囲で1分〜数時間行なうのが好
ましい。Next, the substrate coated with the polyimide precursor composition is dried to obtain a polyimide precursor composition coating film. Drying is preferably performed using an oven, a hot plate, infrared rays or the like at 50 to 100 ° C. for 1 minute to several hours.
【0042】次に、この被膜上に所望のパターンを有す
るマスクを置き、それを介して化学線を照射し露光す
る。露光に用いられる化学線としては、紫外線、可視光
線、電子線、X線などがあげられる。とくに紫外線、可
視光線が好ましい。Next, a mask having a desired pattern is placed on this film, and actinic rays are irradiated through the mask to expose it. Examples of actinic rays used for exposure include ultraviolet rays, visible rays, electron rays, and X-rays. Ultraviolet rays and visible rays are particularly preferable.
【0043】ネガ型のポリイミドパターンを形成するに
は、露光後、現像液を用いて、未露光部を除去すること
によって達成される。現像液としては、N−メチル−2
−ピロリドン、N,N−ジメチルアセトアミド、N,N
−ジメチルホルムアミドなどの極性溶媒と、メタノー
ル、エタノール、イソプロピルアルコール、キシレン、
水などと組み合わせた現像液が、使用できる。現像後、
エタノール、イソプロピルアルコールなどのアルコール
でリンスをする。また、水酸化ナトリウム、水酸化カリ
ウム、テトラメチルアンモニウムハイドロオキサイド、
テトラエチルアンモニウムハイドロオキサイド、コリン
などのアルカリ水溶液も使用できる。この場合はリンス
液をして、水が使用できる。The formation of a negative type polyimide pattern is achieved by removing the unexposed portion with a developing solution after exposure. As a developing solution, N-methyl-2
-Pyrrolidone, N, N-dimethylacetamide, N, N
-A polar solvent such as dimethylformamide, methanol, ethanol, isopropyl alcohol, xylene,
A developer combined with water or the like can be used. After development,
Rinse with alcohol such as ethanol or isopropyl alcohol. Also, sodium hydroxide, potassium hydroxide, tetramethylammonium hydroxide,
An alkaline aqueous solution such as tetraethylammonium hydroxide or choline can also be used. In this case, the rinse liquid can be used and water can be used.
【0044】ポジ型のポリイミドパターンを形成するに
は、露光後に未露光部の被膜が露光部の被膜より、硬化
度が高くくなる処理を施こすこと、および現像液組成の
選択が、重要である。未露光部の被膜が露光部の被膜よ
り、硬化度が高くなる処理としては、熱処理、赤外線照
射処理、マイクロ波照射処理などが有効であり、とくに
熱処理が簡便な点で望ましい。熱処理は前期乾燥の工程
と同じかそれより高い温度で1分〜数時間行なうのが好
ましい。具体的には60〜180℃、さらに好ましくは
90〜170℃の温度である。露光後に、これらの処理
を行うことによって、未露光部の被膜の方が露光部の被
膜より硬化度が高くなるとともに、現像液に対する耐性
が未露光部の被膜と露光部の被膜で差を生じる。未露光
部の被膜の方が露光部の被膜より、現像液に対する耐性
が高い場合は、露光部の方が未露光部より速く除去さ
れ、ポジ型の像が形成される。逆の場合、すなわち、露
光部の被膜の方が未露光部の被膜より、現像液に対する
耐性が高い場合は、未露光部の方が露光部より速く除去
され、ネガ型の像が形成される。In order to form a positive type polyimide pattern, it is important to carry out a treatment for increasing the degree of curing of the unexposed portion of the coating after the exposure to that of the exposed portion and the selection of the developer composition. is there. Heat treatment, infrared irradiation treatment, microwave irradiation treatment and the like are effective as the treatment for increasing the degree of curing of the unexposed film than the exposed film, and the heat treatment is particularly preferable because it is simple. The heat treatment is preferably performed for 1 minute to several hours at a temperature equal to or higher than that of the previous drying step. Specifically, the temperature is 60 to 180 ° C, more preferably 90 to 170 ° C. By performing these treatments after the exposure, the unexposed film has a higher degree of curing than the exposed film, and the resistance to the developer is different between the unexposed film and the exposed film. . When the unexposed film is more resistant to the developing solution than the exposed film, the exposed film is removed faster than the unexposed film, and a positive image is formed. In the opposite case, that is, when the exposed film is more resistant to the developing solution than the unexposed film, the unexposed part is removed faster than the exposed part, and a negative image is formed. .
【0045】ここでいう硬化とはポリイミド前駆体の被
膜から、ポリイミド以外の成分、例えば、化合物(B)
と、光開始剤、光反応性モノマ類、溶剤、閉環水などが
揮発することをいう。ポリイミド前駆体組成物の被膜は
硬化が進むほど、膜厚が薄くなり、硬化が完了した時
点、すなわち、ポリイミド被膜になった時点である一定
の膜厚になる。硬化度が高くなる処理を施した後の未露
光部の被膜と露光部の被膜との硬化度の違いを膜厚の
比、すなわち、(硬化度比=未露光部被膜の膜厚÷露光
部被膜の膜厚)で示す。硬化度比は露光量および硬化を
進める処理条件により異なるが、ポジ型のポリイミドパ
ターンを形成するには、 0.98 以下が望ましい。The term "curing" as used herein refers to a component other than polyimide, for example, the compound (B) from the film of the polyimide precursor.
And photoinitiators, photoreactive monomers, solvents, ring-closing water, etc. are volatilized. The film of the polyimide precursor composition becomes thinner as the curing progresses, and has a constant film thickness at the time when the curing is completed, that is, when the film becomes a polyimide film. The difference in the degree of cure between the unexposed film and the exposed film after the treatment for increasing the curing degree is expressed by the film thickness ratio, that is, (curing ratio = film thickness of unexposed film ÷ exposed film The film thickness of the coating). The degree of cure differs depending on the amount of exposure and the processing conditions that promote curing, but it is preferably 0.98 or less for forming a positive polyimide pattern.
【0046】ポジ型のポリイミドパターンを形成するの
に適した現像液としては、水酸化ナトリウム、水酸化カ
リウム、テトラメチルアンモニウムハイドロオキサイ
ド、テトラエチルアンモニウムハイドロオキサイド、コ
リンなどのアルカリ水溶液がもつとも望ましい。また、
N−メチル−2−ピロリドン、N,N−ジメチルアセト
アミド、などの極性溶媒とメタノール、エタノール、イ
ソプロピルアルコール、キシレン、水などと組み合わせ
た有機溶媒系現像液は、ネガ型の像をあたえる。現像
後、水又はメタノール、エタノール、イソプロピルアル
コールなどのアルコールでリンスをする。現像後、キュ
アすることによりポリイミド絶縁膜を得る。As a developing solution suitable for forming a positive type polyimide pattern, an alkaline aqueous solution of sodium hydroxide, potassium hydroxide, tetramethylammonium hydroxide, tetraethylammonium hydroxide, choline or the like is preferably used. Also,
An organic solvent-based developer obtained by combining a polar solvent such as N-methyl-2-pyrrolidone or N, N-dimethylacetamide with methanol, ethanol, isopropyl alcohol, xylene, water or the like gives a negative image. After development, rinse with water or an alcohol such as methanol, ethanol or isopropyl alcohol. After development, curing is performed to obtain a polyimide insulating film.
【0047】現像後のキュアは温度を選び、段階的に昇
温するかある温度範囲を選び連続的に昇温しながら5分
〜5時間実施する。このキュアの最高温度は、250〜
500℃、好ましくは、300〜450℃で行うのがよ
い。例えば、130℃、200℃、400℃で各々30
分熱処理する。また、室温から400℃まで2時間かけ
て直線的に昇温してもよい。Curing after development is carried out for 5 minutes to 5 hours while selecting the temperature and gradually raising the temperature or selecting a certain temperature range and continuously raising the temperature. The maximum temperature of this cure is 250 ~
It is good to carry out at 500 ° C., preferably 300 to 450 ° C. For example, 30 at 130 ℃, 200 ℃, and 400 ℃
Heat treatment for minutes. Alternatively, the temperature may be linearly raised from room temperature to 400 ° C. over 2 hours.
【0048】本発明による感光性ポリイミド前駆体によ
り形成したポリイミド被膜は、半導体のパッシベーショ
ン膜、半導体素子の保護膜や、高密度実装用多層配線の
層間絶縁膜などの用途として用いられる。The polyimide film formed from the photosensitive polyimide precursor according to the present invention is used as a passivation film for semiconductors, a protective film for semiconductor elements, an interlayer insulating film for multi-layer wiring for high-density packaging, and the like.
【0049】[0049]
【実施例】以下、実施例に基づいて本発明を具体的に説
明するが、本発明はこれらに限定されない。EXAMPLES The present invention will be specifically described below based on examples, but the present invention is not limited thereto.
【0050】実施例1 3,3´,4,4´−ベンゾフェノンテトラカルボン酸
二無水物 80.55g,ピロメリット酸二無水物 54.53gを
エタノール 2.3g,N−メチル−2−ピロリドン 549g
と共に、70℃で3時間反応させた。その後20℃に冷
却し、4、4´−ジアミノジフェニルエ−テル 95.10g
およびビス(3−アミノプロピル)テトラメチルジシロ
キサン 6.20 gを添加し、さらに60℃で3時間反応さ
せ、粘度122ポアズ(25℃)のポリマ(A)溶液を
得た。この溶液にポリマ中の全カルボキシル基と当量に
なるように、エチルN−(2−メタクリロイルオキシエ
チル)ウレタン 201.21 g、3−フェニル−5−イソオ
キサゾロン 23.6 g、3,3´−カルボニルビス(ジエ
チルアミノクマリン) 2.36 gのγ−ブチロラクトン 3
15gに溶解した溶液を添加し、ポリイミド前駆体組成物
を得た。Example 1 80.55 g of 3,3 ', 4,4'-benzophenone tetracarboxylic dianhydride, 54.53 g of pyromellitic dianhydride, 2.3 g of ethanol and 549 g of N-methyl-2-pyrrolidone
The reaction was carried out at 70 ° C. for 3 hours. After that, it was cooled to 20 ° C. and 95.10 g of 4,4′-diaminodiphenyl ether.
And 6.20 g of bis (3-aminopropyl) tetramethyldisiloxane were added and further reacted at 60 ° C. for 3 hours to obtain a polymer (A) solution having a viscosity of 122 poise (25 ° C.). 201.21 g of ethyl N- (2-methacryloyloxyethyl) urethane, 23.6 g of 3-phenyl-5-isoxazolone, 3,3'-carbonylbis (diethylamino) were added to this solution in an amount equivalent to all the carboxyl groups in the polymer. Coumarin) 2.36 g of γ-butyrolactone 3
A solution dissolved in 15 g was added to obtain a polyimide precursor composition.
【0051】4インチシリコンウエハー上にこのポリイ
ミド前駆体組成物を塗布、ホットプレートで80℃で3
分乾燥し、膜厚6.69μmの皮膜を形成した。キャノン
(株)製紫外線露光機PLA−501Fを用い、クロム
製のフォトマスクを介して1000mJ/cm2 (365n
m の紫外線強度)露光した。露光後、ホットプレートで
140℃で3分熱処理を施した。この処理により未露光
部の被膜は3.73μm、露光部の被膜は5.45μmの膜厚と
なり、硬化度比は0.684 であった。次にテトラメチルア
ンモニウムハイドロオキサイドの2.38%の水溶液からな
る現像液に浸漬し、現像した。水でリンス後、窒素ブロ
ーして乾燥した。この様にして、得られたポジ型のパタ
ーンを130℃、200℃、400℃で各々30分窒素
雰囲気中でキュアし、ポジ型のポリイミドパターンを形
成した。This polyimide precursor composition was coated on a 4-inch silicon wafer, and was heated on a hot plate at 80 ° C. for 3 hours.
After minute drying, a film with a thickness of 6.69 μm was formed. 1000 mJ / cm 2 (365n) using a photo mask made of chrome using an ultraviolet exposure device PLA-501F made by Canon Inc.
m UV intensity) exposed. After the exposure, heat treatment was performed on a hot plate at 140 ° C. for 3 minutes. By this treatment, the unexposed film had a thickness of 3.73 μm, the exposed film had a thickness of 5.45 μm, and the curing ratio was 0.684. Next, it was immersed in a developer composed of a 2.38% aqueous solution of tetramethylammonium hydroxide for development. After rinsing with water, it was blown with nitrogen and dried. The positive type pattern thus obtained was cured at 130 ° C., 200 ° C. and 400 ° C. for 30 minutes in a nitrogen atmosphere to form a positive type polyimide pattern.
【0052】実施例2 実施例1において露光後、熱処理をせず、N−メチル−
2−ピロリドン 700g,キシレン 300g 、水 100g から
なる現像液に浸漬し、イソプロピルアルコールでリンス
後、窒素ブローし、ネガ型のパターンを得た。Example 2 In Example 1, after the exposure, no heat treatment was performed and N-methyl-
A negative type pattern was obtained by immersing in a developer containing 700 g of 2-pyrrolidone, 300 g of xylene and 100 g of water, rinsing with isopropyl alcohol, and blowing with nitrogen.
【0053】実施例3 実施例1において露光後、熱処理をせず、テトラメチル
アンモニウムハイドロオキサイドの0.48%の水溶液から
なる現像液に浸漬し、現像した。水でリンス後、窒素ブ
ローし、ネガ型のパターンを得た。Example 3 After exposure in Example 1, without heat treatment, the sample was immersed in a developing solution containing a 0.48% aqueous solution of tetramethylammonium hydroxide for development. After rinsing with water, nitrogen blowing was performed to obtain a negative pattern.
【0054】実施例4 実施例1で得たポリマ(A)溶液に、1−プロピル−3
−(2−メタクリロイルオキシエチル)ウレア 214g、
3−フェニル−5−イソオキサゾロン 23.6 g、3,3
´−カルボニルビス(ジエチルアミノクマリン) 2.36
gをN−メチル−2−ピロリドン 315gに溶解した溶液
を添加し、ポリイミド前駆体組成物を調整した。Example 4 1-propyl-3 was added to the polymer (A) solution obtained in Example 1.
214 g of-(2-methacryloyloxyethyl) urea,
3-phenyl-5-isoxazolone 23.6 g, 3,3
´-Carbonylbis (diethylaminocoumarin) 2.36
A solution of 315 g of N-methyl-2-pyrrolidone dissolved in 315 g was added to prepare a polyimide precursor composition.
【0055】4インチシリコンウエハー上にこのポリイ
ミド前駆体組成物を塗布、ホットプレートで80℃で3
分乾燥し、膜厚6.56μmポリイミド前駆体皮膜を形成し
た。キャノン(株)製紫外線露光機PLA−501Fを
用い、クロム製のフォトマスクを介して1000mJ/
cm2 (365nm の紫外線強度)露光した。露光後、ホッ
トプレートで140℃で3分熱処理を施した。この処理
により未露光部の被膜は4.41μm、露光部の被膜は5.83
μmの膜厚となり、硬化度比は0.756 であった。次にテ
トラメチルアンモニウムハイドロオキサイドの2.38%の
水溶液からなる現像液に浸漬現像し、水でリンス後、窒
素ブローし、ポジ型の像を得た。This polyimide precursor composition was coated on a 4-inch silicon wafer, and was heated at 80 ° C. for 3 hours on a hot plate.
After minute drying, a polyimide precursor film having a thickness of 6.56 μm was formed. Using a UV exposure machine PLA-501F manufactured by Canon Inc., 1000 mJ /
It was exposed to cm 2 (ultraviolet intensity of 365 nm). After the exposure, heat treatment was performed on a hot plate at 140 ° C. for 3 minutes. By this treatment, the unexposed film was 4.41 μm and the exposed film was 5.83 μm.
The film thickness was μm, and the cure ratio was 0.756. Next, immersion development was performed in a developing solution composed of a 2.38% aqueous solution of tetramethylammonium hydroxide, rinsed with water, and then blown with nitrogen to obtain a positive image.
【0056】実施例5 実施例4において露光後、熱処理をせず、N−メチル−
2−ピロリドン 700g,キシレン 300g 、水 100g から
なる現像液に浸漬し、イソプロピルアルコールでリンス
後、窒素ブローし、ネガ型のパターンを得た。Example 5 In Example 4, after the exposure, no heat treatment was performed and N-methyl-
A negative type pattern was obtained by immersing in a developer containing 700 g of 2-pyrrolidone, 300 g of xylene and 100 g of water, rinsing with isopropyl alcohol, and blowing with nitrogen.
【0057】参考例 本発明の実施例1に使用した化合物(B)、エチルN−
(2−メタクリロイルオキシエチル)ウレタンは、2−
メタクリロイルオキシエチルイソシアネート(昭和ロー
ディア(株)製) 115.15 g(1モル)とエタノール 4
60.7g(10モル)を反応させ、過剰のエタノールを減
圧下で留去し、合成した。Reference Example Compound (B) used in Example 1 of the present invention, ethyl N-
(2-methacryloyloxyethyl) urethane is 2-
Methacryloyloxyethyl isocyanate (Showa Rhodia Co., Ltd.) 115.15 g (1 mol) and ethanol 4
60.7 g (10 mol) was reacted and excess ethanol was distilled off under reduced pressure to synthesize.
【0058】本発明の実施例4に使用した化合物
(B)、1−プロピル−3−(2−メタクリロイルオキ
シエチル)ウレアは、2−メタクリロイルオキシエチル
イソシアネート(昭和ローディア(株)製) 115.15 g
(1モル)とn−プロピルアミン 59.11g(1モル)を
N−メチル−2−ピロリドン 300g中で反応させ合成し
た。これは、そのまま溶液として使用した。Compound (B) and 1-propyl-3- (2-methacryloyloxyethyl) urea used in Example 4 of the present invention were 2-methacryloyloxyethyl isocyanate (Showa Rhodia Co., Ltd.) 115.15 g.
(1 mol) was reacted with 59.11 g (1 mol) of n-propylamine in 300 g of N-methyl-2-pyrrolidone to synthesize. This was used as a solution as it was.
【0059】[0059]
【発明の効果】本発明は、上述したように、一般式
(1)で表される構造単位を主成分とするポリマ、一般
式(2)で表される化合物(B)、および、光開始剤お
よび/または増感剤および/または光反応性モノマから
なる組成物が、ポジ型、ネガ型の感光性ポリイミド前駆
体として優れた性能を示すと言う予想外の効果を得るこ
とができたものである。本発明における感光性ポリイミ
ド前駆体組成物は容易に製造でき、かつ現像後、キュア
することにより、性能が優れたポリイミド被膜を得るこ
とができる。INDUSTRIAL APPLICABILITY As described above, the present invention provides a polymer containing a structural unit represented by the general formula (1) as a main component, a compound (B) represented by the general formula (2), and a photoinitiation. A composition comprising an agent and / or a sensitizer and / or a photoreactive monomer and having an unexpected effect of exhibiting excellent performance as a positive-type or negative-type photosensitive polyimide precursor Is. The photosensitive polyimide precursor composition of the present invention can be easily produced, and a polyimide film having excellent performance can be obtained by curing after development.
フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 G03F 7/039 H01L 21/027 Continuation of the front page (51) Int.Cl. 5 Identification number Office reference number FI technical display location G03F 7/039 H01L 21/027
Claims (1)
主成分とするポリマ(A)、 【化1】 (ただし、式中R1 は少なくとも2個の炭素原子を有す
る3価または4価の有機基、R2 は少なくとも2個の炭
素原子を有する2価の有機基、R3 は水素、アルカリ金
属イオン、アンモニウムイオンまたは炭素数1〜30の
有機基を表す。nは1または2である。) (b)一般式(2)で表される化合物(B)、および 【化2】 (ただし、式中、Y1 、Y2 は、それぞれ−O−または
−NH−基を示す。R4は水素または炭素数1〜10の
低級アルキル基、R5 は置換または無置換の炭化水素
基、R6 は置換または無置換の炭素数1〜10の炭化水
素基を表す。) (c)光開始剤および/または増感剤および/または光
反応性モノマを含有することを特徴とする感光性ポリイ
ミド前駆体組成物。1. A polymer (A) comprising a structural unit represented by the general formula (1) as a main component, (Wherein R 1 is a trivalent or tetravalent organic group having at least 2 carbon atoms, R 2 is a divalent organic group having at least 2 carbon atoms, R 3 is hydrogen, an alkali metal ion Represents an ammonium ion or an organic group having 1 to 30 carbon atoms, n is 1 or 2.) (b) The compound (B) represented by the general formula (2), and (In the formula, Y 1 and Y 2 each represent an —O— or —NH— group. R 4 is hydrogen or a lower alkyl group having 1 to 10 carbon atoms, and R 5 is a substituted or unsubstituted hydrocarbon. The group R 6 represents a substituted or unsubstituted hydrocarbon group having 1 to 10 carbon atoms.) (C) A photoinitiator and / or a sensitizer and / or a photoreactive monomer are contained. Photosensitive polyimide precursor composition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11726193A JP3289399B2 (en) | 1993-05-19 | 1993-05-19 | Photosensitive polyimide precursor composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11726193A JP3289399B2 (en) | 1993-05-19 | 1993-05-19 | Photosensitive polyimide precursor composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06332178A true JPH06332178A (en) | 1994-12-02 |
| JP3289399B2 JP3289399B2 (en) | 2002-06-04 |
Family
ID=14707388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11726193A Expired - Lifetime JP3289399B2 (en) | 1993-05-19 | 1993-05-19 | Photosensitive polyimide precursor composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3289399B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5370510A (en) * | 1992-06-12 | 1994-12-06 | Bee Chemical Company | Liquid metering system |
| JP2008242093A (en) * | 2007-03-27 | 2008-10-09 | Fujifilm Corp | Curable composition and planographic printing plate precursor |
| WO2015052885A1 (en) * | 2013-10-09 | 2015-04-16 | 日立化成デュポンマイクロシステムズ株式会社 | Resin composition containing polyimide precursor and method for manufacturing cured film using said resin composition |
| KR20150060055A (en) * | 2013-11-25 | 2015-06-03 | 제일모직주식회사 | Positive photosensitive resin composition, photosensitive resin film, and display device using the same |
| JP2021120703A (en) * | 2020-01-30 | 2021-08-19 | 旭化成株式会社 | Photosensitive resin composition, cured relief pattern and its manufacturing method |
| KR20230110589A (en) | 2020-12-28 | 2023-07-24 | 후지필름 가부시키가이샤 | Resin composition, cured product, laminate, method for producing cured product, and semiconductor device |
| KR20230110590A (en) | 2020-12-28 | 2023-07-24 | 후지필름 가부시키가이샤 | Resin composition, cured product, laminate, method for producing cured product, and semiconductor device |
-
1993
- 1993-05-19 JP JP11726193A patent/JP3289399B2/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5370510A (en) * | 1992-06-12 | 1994-12-06 | Bee Chemical Company | Liquid metering system |
| JP2008242093A (en) * | 2007-03-27 | 2008-10-09 | Fujifilm Corp | Curable composition and planographic printing plate precursor |
| WO2015052885A1 (en) * | 2013-10-09 | 2015-04-16 | 日立化成デュポンマイクロシステムズ株式会社 | Resin composition containing polyimide precursor and method for manufacturing cured film using said resin composition |
| JPWO2015052885A1 (en) * | 2013-10-09 | 2017-03-09 | 日立化成デュポンマイクロシステムズ株式会社 | Resin composition containing polyimide precursor and method for producing cured film using the same |
| KR20150060055A (en) * | 2013-11-25 | 2015-06-03 | 제일모직주식회사 | Positive photosensitive resin composition, photosensitive resin film, and display device using the same |
| JP2021120703A (en) * | 2020-01-30 | 2021-08-19 | 旭化成株式会社 | Photosensitive resin composition, cured relief pattern and its manufacturing method |
| KR20230110589A (en) | 2020-12-28 | 2023-07-24 | 후지필름 가부시키가이샤 | Resin composition, cured product, laminate, method for producing cured product, and semiconductor device |
| KR20230110590A (en) | 2020-12-28 | 2023-07-24 | 후지필름 가부시키가이샤 | Resin composition, cured product, laminate, method for producing cured product, and semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3289399B2 (en) | 2002-06-04 |
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