JPH06332169A - Resist ink composition - Google Patents
Resist ink compositionInfo
- Publication number
- JPH06332169A JPH06332169A JP14155193A JP14155193A JPH06332169A JP H06332169 A JPH06332169 A JP H06332169A JP 14155193 A JP14155193 A JP 14155193A JP 14155193 A JP14155193 A JP 14155193A JP H06332169 A JPH06332169 A JP H06332169A
- Authority
- JP
- Japan
- Prior art keywords
- unsaturated
- acid
- ink composition
- epoxy
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 42
- 150000001875 compounds Chemical class 0.000 claims abstract description 48
- 239000004593 Epoxy Substances 0.000 claims abstract description 44
- 239000002253 acid Substances 0.000 claims abstract description 27
- 229920005989 resin Polymers 0.000 claims abstract description 24
- 239000011347 resin Substances 0.000 claims abstract description 24
- 125000003700 epoxy group Chemical group 0.000 claims abstract description 17
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 13
- 150000007519 polyprotic acids Polymers 0.000 claims abstract description 9
- 239000003999 initiator Substances 0.000 claims abstract description 8
- 229920006395 saturated elastomer Polymers 0.000 claims abstract description 6
- 238000002156 mixing Methods 0.000 claims abstract description 5
- 150000008065 acid anhydrides Chemical class 0.000 claims description 8
- MEVBAGCIOOTPLF-UHFFFAOYSA-N 2-[[5-(oxiran-2-ylmethoxy)naphthalen-2-yl]oxymethyl]oxirane Chemical compound C1OC1COC(C=C1C=CC=2)=CC=C1C=2OCC1CO1 MEVBAGCIOOTPLF-UHFFFAOYSA-N 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 abstract description 22
- 230000004907 flux Effects 0.000 abstract description 14
- 239000007864 aqueous solution Substances 0.000 abstract description 12
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 239000003513 alkali Substances 0.000 abstract description 6
- 125000001624 naphthyl group Chemical group 0.000 abstract description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 abstract 1
- 230000036211 photosensitivity Effects 0.000 abstract 1
- 239000003822 epoxy resin Substances 0.000 description 29
- 229920000647 polyepoxide Polymers 0.000 description 29
- 238000000576 coating method Methods 0.000 description 17
- 229920003986 novolac Polymers 0.000 description 17
- 239000011248 coating agent Substances 0.000 description 16
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 15
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 15
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 12
- 239000000243 solution Substances 0.000 description 12
- 239000000047 product Substances 0.000 description 11
- 239000000126 substance Substances 0.000 description 11
- 206010040844 Skin exfoliation Diseases 0.000 description 10
- 238000011156 evaluation Methods 0.000 description 10
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 9
- 238000007259 addition reaction Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- -1 methyl disubstituted butenyltetrahydrophthalic anhydride Chemical class 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 8
- 229930185605 Bisphenol Natural products 0.000 description 8
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 8
- 238000011161 development Methods 0.000 description 8
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 8
- NWVVVBRKAWDGAB-UHFFFAOYSA-N p-methoxyphenol Chemical compound COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 8
- 238000007796 conventional method Methods 0.000 description 7
- 239000000945 filler Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 6
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 6
- 125000002843 carboxylic acid group Chemical group 0.000 description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 6
- 150000002989 phenols Chemical class 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 229910000029 sodium carbonate Inorganic materials 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 4
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 4
- HTZCNXWZYVXIMZ-UHFFFAOYSA-M benzyl(triethyl)azanium;chloride Chemical compound [Cl-].CC[N+](CC)(CC)CC1=CC=CC=C1 HTZCNXWZYVXIMZ-UHFFFAOYSA-M 0.000 description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 4
- 150000002009 diols Chemical class 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000003112 inhibitor Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- FEIQOMCWGDNMHM-KBXRYBNXSA-N (2e,4e)-5-phenylpenta-2,4-dienoic acid Chemical compound OC(=O)\C=C\C=C\C1=CC=CC=C1 FEIQOMCWGDNMHM-KBXRYBNXSA-N 0.000 description 2
- CDUQMGQIHYISOP-RMKNXTFCSA-N (e)-2-cyano-3-phenylprop-2-enoic acid Chemical compound OC(=O)C(\C#N)=C\C1=CC=CC=C1 CDUQMGQIHYISOP-RMKNXTFCSA-N 0.000 description 2
- WBYWAXJHAXSJNI-VOTSOKGWSA-M .beta-Phenylacrylic acid Natural products [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 description 2
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 2
- OUPZKGBUJRBPGC-UHFFFAOYSA-N 1,3,5-tris(oxiran-2-ylmethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound O=C1N(CC2OC2)C(=O)N(CC2OC2)C(=O)N1CC1CO1 OUPZKGBUJRBPGC-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- ZCJLOOJRNPHKAV-UHFFFAOYSA-N 3-(furan-2-yl)prop-2-enoic acid Chemical compound OC(=O)C=CC1=CC=CO1 ZCJLOOJRNPHKAV-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- WBYWAXJHAXSJNI-SREVYHEPSA-N Cinnamic acid Chemical compound OC(=O)\C=C/C1=CC=CC=C1 WBYWAXJHAXSJNI-SREVYHEPSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 239000002518 antifoaming agent Substances 0.000 description 2
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
- 239000012965 benzophenone Substances 0.000 description 2
- KXHPPCXNWTUNSB-UHFFFAOYSA-M benzyl(trimethyl)azanium;chloride Chemical compound [Cl-].C[N+](C)(C)CC1=CC=CC=C1 KXHPPCXNWTUNSB-UHFFFAOYSA-M 0.000 description 2
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 229930016911 cinnamic acid Natural products 0.000 description 2
- 235000013985 cinnamic acid Nutrition 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 2
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- WBYWAXJHAXSJNI-UHFFFAOYSA-N methyl p-hydroxycinnamate Natural products OC(=O)C=CC1=CC=CC=C1 WBYWAXJHAXSJNI-UHFFFAOYSA-N 0.000 description 2
- CIXSDMKDSYXUMJ-UHFFFAOYSA-N n,n-diethylcyclohexanamine Chemical compound CCN(CC)C1CCCCC1 CIXSDMKDSYXUMJ-UHFFFAOYSA-N 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 150000003512 tertiary amines Chemical class 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical compound O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 1
- XHXSXTIIDBZEKB-UHFFFAOYSA-N 1,2,3,4,5,6,7,8-octamethylanthracene-9,10-dione Chemical compound CC1=C(C)C(C)=C2C(=O)C3=C(C)C(C)=C(C)C(C)=C3C(=O)C2=C1C XHXSXTIIDBZEKB-UHFFFAOYSA-N 0.000 description 1
- VZXPHDGHQXLXJC-UHFFFAOYSA-N 1,6-diisocyanato-5,6-dimethylheptane Chemical compound O=C=NC(C)(C)C(C)CCCCN=C=O VZXPHDGHQXLXJC-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- AFBBKYQYNPNMAT-UHFFFAOYSA-N 1h-1,2,4-triazol-1-ium-3-thiolate Chemical compound SC=1N=CNN=1 AFBBKYQYNPNMAT-UHFFFAOYSA-N 0.000 description 1
- PIZHFBODNLEQBL-UHFFFAOYSA-N 2,2-diethoxy-1-phenylethanone Chemical compound CCOC(OCC)C(=O)C1=CC=CC=C1 PIZHFBODNLEQBL-UHFFFAOYSA-N 0.000 description 1
- LZWVPGJPVCYAOC-UHFFFAOYSA-N 2,3-diphenylanthracene-9,10-dione Chemical compound C=1C=CC=CC=1C=1C=C2C(=O)C3=CC=CC=C3C(=O)C2=CC=1C1=CC=CC=C1 LZWVPGJPVCYAOC-UHFFFAOYSA-N 0.000 description 1
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 description 1
- LYANEXCVXFZQFF-UHFFFAOYSA-N 2-(2,5-dioxooxolan-3-yl)acetic acid Chemical compound OC(=O)CC1CC(=O)OC1=O LYANEXCVXFZQFF-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- KUBDPQJOLOUJRM-UHFFFAOYSA-N 2-(chloromethyl)oxirane;4-[2-(4-hydroxyphenyl)propan-2-yl]phenol Chemical compound ClCC1CO1.C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 KUBDPQJOLOUJRM-UHFFFAOYSA-N 0.000 description 1
- FALRKNHUBBKYCC-UHFFFAOYSA-N 2-(chloromethyl)pyridine-3-carbonitrile Chemical compound ClCC1=NC=CC=C1C#N FALRKNHUBBKYCC-UHFFFAOYSA-N 0.000 description 1
- HEXHLHNCJVXPNU-UHFFFAOYSA-N 2-(trimethoxysilylmethyl)butane-1,4-diamine Chemical compound CO[Si](OC)(OC)CC(CN)CCN HEXHLHNCJVXPNU-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- WOBXOLYEZSSDLB-UHFFFAOYSA-N 2-[(2-phenylphenyl)methyl]oxirane Chemical group C=1C=CC=C(C=2C=CC=CC=2)C=1CC1CO1 WOBXOLYEZSSDLB-UHFFFAOYSA-N 0.000 description 1
- OGRULRAOMCDCBO-UHFFFAOYSA-N 2-[[1-(oxiran-2-ylmethoxy)naphthalen-2-yl]oxymethyl]oxirane Chemical compound C1OC1COC1=CC=C2C=CC=CC2=C1OCC1CO1 OGRULRAOMCDCBO-UHFFFAOYSA-N 0.000 description 1
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 1
- GKDDBMNBEFBUAY-UHFFFAOYSA-N 2-benzofuran-1,3-dione;2-(2-hydroxyethoxy)ethanol;prop-2-enoic acid Chemical compound OC(=O)C=C.OCCOCCO.C1=CC=C2C(=O)OC(=O)C2=C1 GKDDBMNBEFBUAY-UHFFFAOYSA-N 0.000 description 1
- ZCDADJXRUCOCJE-UHFFFAOYSA-N 2-chlorothioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(Cl)=CC=C3SC2=C1 ZCDADJXRUCOCJE-UHFFFAOYSA-N 0.000 description 1
- SJEBAWHUJDUKQK-UHFFFAOYSA-N 2-ethylanthraquinone Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC=C3C(=O)C2=C1 SJEBAWHUJDUKQK-UHFFFAOYSA-N 0.000 description 1
- YJQMXVDKXSQCDI-UHFFFAOYSA-N 2-ethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC=C3SC2=C1 YJQMXVDKXSQCDI-UHFFFAOYSA-N 0.000 description 1
- CKKQLOUBFINSIB-UHFFFAOYSA-N 2-hydroxy-1,2,2-triphenylethanone Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)(O)C(=O)C1=CC=CC=C1 CKKQLOUBFINSIB-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- MYISVPVWAQRUTL-UHFFFAOYSA-N 2-methylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC=C3SC2=C1 MYISVPVWAQRUTL-UHFFFAOYSA-N 0.000 description 1
- KTALPKYXQZGAEG-UHFFFAOYSA-N 2-propan-2-ylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C(C)C)=CC=C3SC2=C1 KTALPKYXQZGAEG-UHFFFAOYSA-N 0.000 description 1
- YTPSFXZMJKMUJE-UHFFFAOYSA-N 2-tert-butylanthracene-9,10-dione Chemical compound C1=CC=C2C(=O)C3=CC(C(C)(C)C)=CC=C3C(=O)C2=C1 YTPSFXZMJKMUJE-UHFFFAOYSA-N 0.000 description 1
- OFNISBHGPNMTMS-UHFFFAOYSA-N 3-methylideneoxolane-2,5-dione Chemical compound C=C1CC(=O)OC1=O OFNISBHGPNMTMS-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- GDGIVSREGUOIJZ-UHFFFAOYSA-N 5-amino-3h-1,3,4-thiadiazole-2-thione Chemical compound NC1=NN=C(S)S1 GDGIVSREGUOIJZ-UHFFFAOYSA-N 0.000 description 1
- MWSKJDNQKGCKPA-UHFFFAOYSA-N 6-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1CC(C)=CC2C(=O)OC(=O)C12 MWSKJDNQKGCKPA-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 229920003319 Araldite® Polymers 0.000 description 1
- 229910015900 BF3 Inorganic materials 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- OYHQOLUKZRVURQ-HZJYTTRNSA-N Linoleic acid Chemical compound CCCCC\C=C/C\C=C/CCCCCCCC(O)=O OYHQOLUKZRVURQ-HZJYTTRNSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- ALQSHHUCVQOPAS-UHFFFAOYSA-N Pentane-1,5-diol Chemical compound OCCCCCO ALQSHHUCVQOPAS-UHFFFAOYSA-N 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 206010040880 Skin irritation Diseases 0.000 description 1
- 244000028419 Styrax benzoin Species 0.000 description 1
- 235000000126 Styrax benzoin Nutrition 0.000 description 1
- 235000008411 Sumatra benzointree Nutrition 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- REUQOSNMSWLNPD-UHFFFAOYSA-N [2-(diethylamino)phenyl]-phenylmethanone Chemical compound CCN(CC)C1=CC=CC=C1C(=O)C1=CC=CC=C1 REUQOSNMSWLNPD-UHFFFAOYSA-N 0.000 description 1
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000003377 acid catalyst Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 229910000288 alkali metal carbonate Inorganic materials 0.000 description 1
- 150000008041 alkali metal carbonates Chemical class 0.000 description 1
- 229910000318 alkali metal phosphate Inorganic materials 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229920003180 amino resin Polymers 0.000 description 1
- 150000008365 aromatic ketones Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229920005601 base polymer Polymers 0.000 description 1
- LHMRXAIRPKSGDE-UHFFFAOYSA-N benzo[a]anthracene-7,12-dione Chemical compound C1=CC2=CC=CC=C2C2=C1C(=O)C1=CC=CC=C1C2=O LHMRXAIRPKSGDE-UHFFFAOYSA-N 0.000 description 1
- 229960002130 benzoin Drugs 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 229910052570 clay Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- FOTKYAAJKYLFFN-UHFFFAOYSA-N decane-1,10-diol Chemical compound OCCCCCCCCCCO FOTKYAAJKYLFFN-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- XMEORSGHQPZTCP-UHFFFAOYSA-N dichloromethane;1,1,1-trichloroethane Chemical compound ClCCl.CC(Cl)(Cl)Cl XMEORSGHQPZTCP-UHFFFAOYSA-N 0.000 description 1
- 150000005690 diesters Chemical class 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 125000005442 diisocyanate group Chemical group 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000002118 epoxides Chemical class 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- IIQWTZQWBGDRQG-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate;isocyanic acid Chemical compound N=C=O.CCOC(=O)C(C)=C IIQWTZQWBGDRQG-UHFFFAOYSA-N 0.000 description 1
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 125000002485 formyl group Chemical class [H]C(*)=O 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 239000003673 groundwater Substances 0.000 description 1
- LHGVFZTZFXWLCP-UHFFFAOYSA-N guaiacol Chemical compound COC1=CC=CC=C1O LHGVFZTZFXWLCP-UHFFFAOYSA-N 0.000 description 1
- 235000019382 gum benzoic Nutrition 0.000 description 1
- FLBJFXNAEMSXGL-UHFFFAOYSA-N het anhydride Chemical compound O=C1OC(=O)C2C1C1(Cl)C(Cl)=C(Cl)C2(Cl)C1(Cl)Cl FLBJFXNAEMSXGL-UHFFFAOYSA-N 0.000 description 1
- 239000012442 inert solvent Substances 0.000 description 1
- OYHQOLUKZRVURQ-IXWMQOLASA-N linoleic acid Natural products CCCCC\C=C/C\C=C\CCCCCCCC(O)=O OYHQOLUKZRVURQ-IXWMQOLASA-N 0.000 description 1
- 235000020778 linoleic acid Nutrition 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 239000000391 magnesium silicate Substances 0.000 description 1
- 229910052919 magnesium silicate Inorganic materials 0.000 description 1
- 235000019792 magnesium silicate Nutrition 0.000 description 1
- GNARHXWTMJZNTP-UHFFFAOYSA-N methoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[SiH2]CCCOCC1CO1 GNARHXWTMJZNTP-UHFFFAOYSA-N 0.000 description 1
- NFWSQSCIDYBUOU-UHFFFAOYSA-N methylcyclopentadiene Chemical compound CC1=CC=CC1 NFWSQSCIDYBUOU-UHFFFAOYSA-N 0.000 description 1
- 125000002816 methylsulfanyl group Chemical group [H]C([H])([H])S[*] 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920001610 polycaprolactone Polymers 0.000 description 1
- 239000004632 polycaprolactone Substances 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229910000160 potassium phosphate Inorganic materials 0.000 description 1
- 235000011009 potassium phosphates Nutrition 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000004053 quinones Chemical class 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007142 ring opening reaction Methods 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000036556 skin irritation Effects 0.000 description 1
- 231100000475 skin irritation Toxicity 0.000 description 1
- 239000001488 sodium phosphate Substances 0.000 description 1
- 229910000162 sodium phosphate Inorganic materials 0.000 description 1
- 229940014800 succinic anhydride Drugs 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- QXJQHYBHAIHNGG-UHFFFAOYSA-N trimethylolethane Chemical compound OCC(C)(CO)CO QXJQHYBHAIHNGG-UHFFFAOYSA-N 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
Landscapes
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Epoxy Resins (AREA)
- Inks, Pencil-Leads, Or Crayons (AREA)
- Macromonomer-Based Addition Polymer (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、プリント配線基板の製
造工程において、ソルダーレジスト、就中、、水溶性フ
ラックス耐性レジストとして好適に用いられるレジスト
インキ組成物に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resist ink composition which is preferably used as a solder resist, especially a water-soluble flux resistant resist in a manufacturing process of a printed wiring board.
【0002】[0002]
【従来の技術】従来、プリント配線基板業界において、
ソルダーレジスト、化学メッキ用レジスト等に使用可能
な優れた特性を有するレジストインキ組成物が知られて
いる。ソルダーレジストの主な目的は、はんだ付け時の
はんだ領域を限定し、はんだブリッジを防ぐこと、裸の
銅導体の腐食を防止すること、及び長期にわたって導体
間の電気絶縁性を保持することである。プリント配線基
板上にソルダーレジスト膜を形成する際、従来、エポキ
シ樹脂、アミノプラスト等を主成分とする熱硬化型のレ
ジストインキをスクリーン印刷法により印刷し、転写部
を熱硬化させていた。しかし、近年、IC、LSI、超
LSI等電子部品の高集積化が進む中で、これらを搭載
するプリント配線基板も益々高密度化の傾向にあり、そ
の実装法としては、配線間隔を狭めたり、フラットプラ
スチックパッケージ(FPP)のようなLSI部品を基
板の表面に実装する表面実装方式(SMT)が採用され
ているのが現状であり、従来の方式ではこの高密度化の
要求に対応しきれなくなっている。2. Description of the Related Art Conventionally, in the printed wiring board industry,
A resist ink composition having excellent properties that can be used as a solder resist, a resist for chemical plating, etc. is known. The main purpose of solder resist is to limit the solder area during soldering, prevent solder bridging, prevent corrosion of bare copper conductor, and maintain electrical insulation between conductors for a long time. . When forming a solder resist film on a printed wiring board, conventionally, a thermosetting resist ink containing epoxy resin, aminoplast or the like as a main component was printed by a screen printing method to thermoset the transfer portion. However, in recent years, as electronic components such as ICs, LSIs, and VLSIs have become highly integrated, the printed wiring boards on which these are mounted are also becoming more and more dense. At present, a surface mounting method (SMT) for mounting an LSI component such as a flat plastic package (FPP) on the surface of a substrate is adopted, and the conventional method cannot meet the demand for high density. It's gone.
【0003】そこで、写真法の原理を利用してソルダー
レジスト膜を得る方法が開発され、それにともなってフ
ォトソルダーレジストインキの開発が検討されてきた。
例えば、特開昭61−272号公報にはエポキシ基を含
有するノボラック型エポキシアクリレート及び光重合性
開始剤を主成分とする組成物が開示されている。これら
の組成物は耐熱性も優れており、有用であるが、現像液
として1,1,1−トリクロルエタン/低級アルコール
混合液を用いる必要があり、現像液管理に問題がある。
また1,1,1−トリクロルエタンの使用は地下水汚染
の恐れがあり、環境保全上好ましくない。Therefore, a method for obtaining a solder resist film by utilizing the principle of photography has been developed, and along with this, development of a photo solder resist ink has been studied.
For example, Japanese Patent Application Laid-Open No. 61-272 discloses a composition containing a novolac type epoxy acrylate containing an epoxy group and a photopolymerizable initiator as main components. These compositions are also excellent in heat resistance and useful, but it is necessary to use a 1,1,1-trichloroethane / lower alcohol mixed solution as a developing solution, and there is a problem in developing solution management.
In addition, the use of 1,1,1-trichloroethane is not preferable in terms of environmental protection because it may cause groundwater contamination.
【0004】そこで、フォトソルダーレジストインキに
おいても作業環境、処理コストの面で、有機溶剤で現像
するタイプのものに代わって、炭酸ナトリウム水溶液の
ような弱アルカリ水溶液により現像可能なものが提案さ
れている。例えば、特開昭61−243869号公報及
び特開昭63−278052号公報には、ノボラック型
もしくはビスフェノール型エポキシ樹脂骨格を有する樹
脂成分を含み、弱アルカリ水溶液により現像が可能であ
り、耐熱性、耐薬品性等に優れた永久保護マスクタイプ
のレジストインキ組成物が開示されている。また特開昭
62−158710号公報、特開昭62−285903
号公報及び特開昭63−11930号公報には無水マレ
イン酸とスチレンとの共重合体にヒドロキシアルキレン
(メタ)アクリレートを開環付加したものをベースポリ
マーとするアルカリ現像型のレジストインキ組成物が開
示されている。In view of the working environment and processing cost, a photo solder resist ink has been proposed which can be developed with a weak alkaline aqueous solution such as an aqueous solution of sodium carbonate, instead of the type developed with an organic solvent. There is. For example, JP-A-61-243869 and JP-A-63-278052 contain a resin component having a novolac type or bisphenol type epoxy resin skeleton, can be developed with a weak alkaline aqueous solution, and have heat resistance, A permanent protection mask type resist ink composition having excellent chemical resistance and the like is disclosed. Further, JP-A-62-158710 and JP-A-62-285903.
JP-A No. 63-11930 and JP-A No. 63-11930 disclose an alkali-developable resist ink composition comprising a copolymer of maleic anhydride and styrene with a ring-opening addition of hydroxyalkylene (meth) acrylate as a base polymer. It is disclosed.
【0005】さらに近年、オゾン層破壊の原因物質とさ
れるフロンの使用が厳しく制限され、フロン洗浄工程を
経ることなくプリント配線板を製造することが望まれて
いる。このためフロンに代わる安全性の高い洗浄剤が種
々試みられているが、これらは洗浄効果及びコストの面
で未だ満足が得られるものではない。これに対してプリ
ント配線板に部品をはんだ付けする際、従来使用されて
来たロジン系のフラックスを特定の水溶性フラックスに
代替させることによってフロンその他の洗浄剤を用いる
ことなく、安全にフラックスの洗浄除去が可能なプリン
ト配線基板を製造する試みがなされ、かなりの効果を上
げている。Furthermore, in recent years, the use of CFCs, which are the cause of ozone layer depletion, has been severely restricted, and it has been desired to manufacture printed wiring boards without a CFC cleaning step. For this reason, various highly safe cleaning agents have been tried in place of CFCs, but these are not yet satisfactory in terms of cleaning effect and cost. On the other hand, when soldering components to a printed wiring board, by replacing the conventionally used rosin-based flux with a specific water-soluble flux, it is possible to safely remove the flux without using CFCs or other cleaning agents. Attempts have been made to produce a printed wiring board that can be cleaned and removed, and the effect has been considerable.
【0006】[0006]
【発明が解決しようとする課題】しかし、上記のような
レジストインキ組成物を用いて、写真法によりソルダー
レジスト膜を形成した場合、耐酸性、耐アルカリ性、耐
溶剤性、はんだ耐熱性及び水溶性フラックス耐性が十分
ではなく、プリント配線基板の永久保護マスクとして使
用するには満足できる性能を有するものが得られていな
かった。そこで、本発明は、このような問題のないレジ
ストインキ組成物を提供することを目的とするものであ
る。すなわち、光に対する感度が良好で、短い露光時間
で容易に光硬化させ、炭酸ナトリウム等のような弱アル
カリ水溶液で容易に現像することができ、さらに光ばか
りでなく熱によっても硬化し得るレジストインキ組成物
であって、それを被対象物に被覆したのち光と熱で硬化
した被膜は、耐酸性、耐アルカリ性、耐溶剤性、はんだ
耐熱性さらには水溶性フラックス耐性に優れた高信頼性
ソルダーレジスト膜として機能するようなレジストイン
キ組成物を提供することを目的とするものである。However, when a solder resist film is formed by a photographic method using the above resist ink composition, acid resistance, alkali resistance, solvent resistance, solder heat resistance and water solubility Flux resistance is not sufficient, and a product having satisfactory performance for use as a permanent protection mask for a printed wiring board has not been obtained. Then, this invention aims at providing a resist ink composition which does not have such a problem. That is, a resist ink that has good sensitivity to light, can be easily photocured in a short exposure time, can be easily developed with a weak alkaline aqueous solution such as sodium carbonate, and can be cured not only by light but also by heat. The composition is a high reliability solder that is excellent in acid resistance, alkali resistance, solvent resistance, solder heat resistance, and water-soluble flux resistance after the composition is coated on the object and then cured by light and heat. It is intended to provide a resist ink composition that functions as a resist film.
【0007】[0007]
【課題を解決するための手段】本発明者らは、このよう
な課題を解決するために鋭意検討の結果、ナフタレン骨
格を有するエポキシ化合物と不飽和一塩基酸とを反応せ
しめて得られる不飽和化合物を使用することにより、前
記の課題を達成できることを見出して本発明に到達し
た。すなわち、本発明は、(A)1,6−ジグリシジル
オキシナフタレンと不飽和一塩基酸とを反応せしめて得
られる不飽和化合物、(B)エポキシ化合物と不飽和一
塩基酸との反応物と、飽和又は不飽和多塩基酸無水物と
を反応せしめて得られる活性光線硬化性樹脂、(C)光
重合開始剤及び(D)一分子中に2個以上のエポキシ基
を有するエポキシ化合物を含有してなり、不飽和化合物
(A)と活性光線硬化性樹脂(B)の混合割合が重量比
で5〜30:95〜70であり、光重合開始剤(C)を
不飽和化合物(A)と活性光線硬化性樹脂(B)の混合
物100重量部に対して2〜30重量部、エポキシ化合
物(D)を活性光線硬化性樹脂(B)100重量部に対
して10〜50重量部含むことを特徴とするレジストイ
ンキ組成物を要旨とするものである。(以下、不飽和化
合物(A)、活性光線硬化性樹脂(B)、光重合開始剤
(C)及びエポキシ化合物(D)をそれぞれA成分、B
成分、C成分及びD成分と略称する。)Means for Solving the Problems As a result of earnest studies to solve such problems, the inventors have found that an unsaturated compound obtained by reacting an epoxy compound having a naphthalene skeleton with an unsaturated monobasic acid. The present invention has been achieved by finding that the above-mentioned problems can be achieved by using a compound. That is, the present invention relates to (A) an unsaturated compound obtained by reacting 1,6-diglycidyloxynaphthalene with an unsaturated monobasic acid, and (B) a reaction product of an epoxy compound and an unsaturated monobasic acid. Containing an actinic ray-curable resin obtained by reacting with a saturated or unsaturated polybasic acid anhydride, (C) a photopolymerization initiator, and (D) an epoxy compound having two or more epoxy groups in one molecule. The mixing ratio of the unsaturated compound (A) and the actinic ray-curable resin (B) is 5 to 30:95 to 70 by weight, and the photopolymerization initiator (C) is added to the unsaturated compound (A). 2 to 30 parts by weight with respect to 100 parts by weight of the mixture of an actinic ray-curable resin (B) and 10 to 50 parts by weight of the epoxy compound (D) with respect to 100 parts by weight of the actinic ray-curable resin (B). A resist ink composition characterized by It is intended. (Hereinafter, the unsaturated compound (A), the actinic ray curable resin (B), the photopolymerization initiator (C) and the epoxy compound (D) are respectively the component A and the component B).
It is abbreviated as component, C component and D component. )
【0008】以下に本発明を詳細に説明する。本発明に
よるレジストインキ組成物は、A成分として、1,6−
ジグリシジルオキシナフタレンと不飽和一塩基酸とをカ
ルボン酸基/エポキシ基のモル比が、例えば、0.8〜
1.1の範囲で付加反応せしめて得られる不飽和化合物
を含有する。1,6−ジグリシジルオキシナフタレンは
公知の化合物であり、例えば市販品としては、大日本イ
ンキ化学工業社製のEX4032(エポキシ当量14
7)を挙げることができる。The present invention will be described in detail below. The resist ink composition according to the present invention has 1,6-
The molar ratio of diglycidyloxynaphthalene and unsaturated monobasic acid of carboxylic acid group / epoxy group is, for example, 0.8 to
It contains an unsaturated compound obtained by addition reaction in the range of 1.1. 1,6-Diglycidyloxynaphthalene is a known compound, and as a commercially available product, for example, EX4032 (epoxy equivalent 14 by Dainippon Ink and Chemicals, Inc.) is used.
7) can be mentioned.
【0009】また、もう一方の不飽和一塩基酸として
は、アクリル酸、メタクリル酸、β−フリルアクリル
酸、β−スチリルアクリル酸、α−シアノケイ皮酸、ケ
イ皮酸、一般式(1)で示されるアクリル酸オリゴマ
ー、 CH2 =CHCOO(CH2 CH2 COO)n H(nは1〜6の整数) (1) 及び、一般式(2)で示されるアクリル酸とカプロラク
トンとの反応物、 CH2 =CHCOO(C5 H10COO)n H(nは1〜3の整数) (2) 等が用いられる。一般式(1)及び一般式(2)で示さ
れる化合物は公知であり、商業的にも入手可能であり、
例えば一般式(1)で示される化合物としては、東亜合
成(株)アロニックスM5600(n;平均1.2〜
1.4)、一般式(2)で示される化合物としては、同
上社アロニックスM5300(n;平均2)等が用いら
れる。これらの不飽和一塩基酸は単独で、又は組み合わ
せて用いることができる。As the other unsaturated monobasic acid, acrylic acid, methacrylic acid, β-furylacrylic acid, β-styrylacrylic acid, α-cyanocinnamic acid, cinnamic acid, and general formula (1) An acrylic acid oligomer represented by: CH 2 ═CHCOO (CH 2 CH 2 COO) n H (n is an integer of 1 to 6) (1), and a reaction product of acrylic acid and caprolactone represented by the general formula (2), CH 2 = CHCOO (C 5 H 10 COO) n H (n is an integer of 1 to 3) (2) or the like is used. The compounds represented by the general formulas (1) and (2) are known and commercially available,
For example, as the compound represented by the general formula (1), Toagosei Co., Ltd. Aronix M5600 (n; average 1.2 to
As the compound represented by 1.4) and the general formula (2), Aronix M5300 (n; average 2) and the like of the same company are used. These unsaturated monobasic acids can be used alone or in combination.
【0010】A成分の合成において、このエポキシ化合
物と不飽和一塩基酸との付加反応は常法により行われる
が、未反応物や遊離のカルボン酸の存在を防ぐためカル
ボン酸基/エポキシ基のモル比は0.9から1.0の範
囲とすることが好ましい。上記エポキシ化合物と不飽和
一塩基酸との付加反応は、例えば前記エポキシ化合物を
メチルエチルケトン、メチルセロソルブアセテート、エ
チルセロソルブアセテート、メチルカルビトールアセテ
ート、エチルカルビトールアセテート等の不活性溶剤に
溶解し、触媒として、トリ−n−ブチルアミン、ジエチ
ルシクロヘキシルアミン等の三級アミン、塩化ベンジル
トリメチルアンモニウム、塩化ベンジルトリエチルアン
モニウム等の四級アンモニウム塩等を用い、また必要に
応じて、重合禁止剤としてハイドロキノンモノメチルエ
ーテル、p−メトキシフェノールを加え、90〜110
℃で約8時間攪拌反応させることにより得られる。In the synthesis of the component A, the addition reaction of this epoxy compound with the unsaturated monobasic acid is carried out by a conventional method, but in order to prevent the presence of unreacted substances or free carboxylic acid, the carboxylic acid group / epoxy group The molar ratio is preferably in the range of 0.9 to 1.0. The addition reaction of the epoxy compound and the unsaturated monobasic acid, for example, the epoxy compound is dissolved in an inert solvent such as methyl ethyl ketone, methyl cellosolve acetate, ethyl cellosolve acetate, methyl carbitol acetate, ethyl carbitol acetate, as a catalyst. , Tertiary amines such as tri-n-butylamine and diethylcyclohexylamine, and quaternary ammonium salts such as benzyltrimethylammonium chloride and benzyltriethylammonium chloride, and, if necessary, hydroquinone monomethyl ether, p as a polymerization inhibitor. -Add methoxyphenol and add 90-110
It can be obtained by reacting with stirring at ℃ for about 8 hours.
【0011】本発明によるレジストインキ組成物は、B
成分としてエポキシ化合物と不飽和一塩基酸との反応物
と、飽和又は不飽和多塩基酸無水物とを反応せしめて得
られる活性光線硬化性樹脂を含有する。このような活性
光線硬化性樹脂は既に公知であり、例えば特公昭51−
28677号公報、特公昭59−19130号公報、特
開昭61−243869号公報等に記載されている。好
ましい活性光線硬化性樹脂としては、ビスフェノール型
エポキシ樹脂、オルソクレゾールノボラック型エポキシ
樹脂、フェノールノボラック型エポキシ樹脂あるいはハ
ロゲン化フェノールノボラック型エポキシ樹脂からなる
群から選ばれる少なくとも1種のエポキシ樹脂と不飽和
一塩基酸とを、カルボン酸基/エポキシ基のモル比が
0.5〜1.0の範囲で付加反応させて得られる不飽和
化合物の二級水酸基及び/あるいは残存エポキシ基に飽
和又は不飽和の多塩基酸無水物を反応させて得られる活
性光線硬化性樹脂を挙げることができる。The resist ink composition according to the present invention comprises B
It contains an actinic ray-curable resin obtained by reacting a reaction product of an epoxy compound and an unsaturated monobasic acid with a saturated or unsaturated polybasic acid anhydride as a component. Such actinic ray curable resins are already known, and for example, Japanese Patent Publication No. 51-
It is described in Japanese Patent Publication No. 28677, Japanese Patent Publication No. 59-19130, Japanese Patent Publication No. 61-243869, and the like. The preferred actinic ray-curable resin is at least one epoxy resin selected from the group consisting of bisphenol type epoxy resin, orthocresol novolac type epoxy resin, phenol novolac type epoxy resin or halogenated phenol novolac type epoxy resin, and an unsaturated unsaturated resin. A secondary acid and / or residual epoxy group of an unsaturated compound obtained by addition reaction of a basic acid and a carboxylic acid group / epoxy group in a molar ratio of 0.5 to 1.0 are saturated or unsaturated. An actinic ray curable resin obtained by reacting a polybasic acid anhydride can be mentioned.
【0012】ビスフェノール型エポキシ樹脂は、ビスフ
ェノールとエピクロルヒドリンを常法により反応させて
得られるもので、商業的にも入手可能である。またオル
ソクレゾールノボラック型、フェノールノボラック型、
あるいはハロゲン化フェノールノボラック型エポキシ樹
脂は、それぞれオルソクレゾール、フェノール、あるい
はハロゲン化フェノール等とアルデヒドを酸触媒の存在
下に反応させて得られるもので、いずれも商業的にも入
手可能である。The bisphenol type epoxy resin is obtained by reacting bisphenol with epichlorohydrin by a conventional method, and is commercially available. Orthocresol novolac type, phenol novolac type,
Alternatively, the halogenated phenol novolac type epoxy resin is obtained by reacting orthocresol, phenol, halogenated phenol or the like with an aldehyde in the presence of an acid catalyst, and any of them is commercially available.
【0013】ビスフェノール型エポキシ樹脂としては、
例えば、シェル社製、エピコート828(エポキシ当量
184〜194)、エピコート834(エポキシ当量2
30〜270)、エピコート1001(エポキシ当量4
50〜500)、エピコート1004(エポキシ当量8
75〜975)ダウケミカル社製DER331(エポキ
シ当量182〜192)、DER337(エポキシ当量
230〜250)、DER661(エポキシ当量500
〜560)、DER663U(エポキシ当量730〜8
20)等が挙げられる。As the bisphenol type epoxy resin,
For example, manufactured by Shell Co., Epicoat 828 (epoxy equivalent 184-194), Epicoat 834 (epoxy equivalent 2
30-270), Epicoat 1001 (epoxy equivalent 4
50-500), Epicoat 1004 (epoxy equivalent 8
75-975) DER331 (epoxy equivalent 182-192), DER337 (epoxy equivalent 230-250), DER661 (epoxy equivalent 500) manufactured by Dow Chemical Co.
~ 560), DER663U (epoxy equivalent 730-8)
20) and the like.
【0014】オルソクレゾールノボラック型エポキシ樹
脂としては、例えば、チバ・ガイギー社製、アラルダイ
トECN1299(軟化点99℃、エポキシ当量23
0)、ECN1280(軟化点80℃、エポキシ当量2
30)、ECN1273(軟化点73℃、エポキシ当量
230)日本化薬(株)製、EOCN104(軟化点9
0〜100℃、エポキシ当量225〜245)、EOC
N103(軟化点80〜90℃、エポキシ当量215〜
235)、EOCN102(軟化点70〜80℃、エポ
キシ当量215〜235)、EOCN101(軟化点6
5〜69℃、エポキシ当量205〜225)等が挙げら
れる。Examples of the ortho-cresol novolak type epoxy resin include Araldite ECN1299 (softening point 99 ° C., epoxy equivalent 23
0), ECN1280 (softening point 80 ° C, epoxy equivalent 2
30), ECN1273 (softening point 73 ° C., epoxy equivalent 230) manufactured by Nippon Kayaku Co., Ltd., EOCN104 (softening point 9
0-100 ° C, epoxy equivalent 225-245), EOC
N103 (softening point 80-90 ° C, epoxy equivalent 215-
235), EOCN102 (softening point 70 to 80 ° C, epoxy equivalent 215 to 235), EOCN101 (softening point 6
5 to 69 ° C., epoxy equivalent 205 to 225) and the like.
【0015】フェノールノボラック型エポキシ樹脂とし
ては、例えばシェル社製、エピコート152(エポキシ
当量175)、エピコート154(エポキシ当量176
〜181)、ダウケミカル社製、DEN431(エポキ
シ当量172〜179)、DEN438(エポキシ当量
175〜182)、東都化成(株)製、YDPN−63
8(エポキシ当量170〜190)、YDPN−601
(エポキシ当量180〜220)、YDPN−602
(エポキシ当量180〜220)等が挙げられる。Examples of the phenol novolac type epoxy resin include Epicoat 152 (epoxy equivalent 175) and Epicoat 154 (epoxy equivalent 176, manufactured by Shell Co.).
181), Dow Chemical Co., DEN431 (epoxy equivalent 172-179), DEN438 (epoxy equivalent 175-182), Toto Kasei Co., Ltd., YDPN-63.
8 (epoxy equivalent 170-190), YDPN-601
(Epoxy equivalent 180-220), YDPN-602
(Epoxy equivalent 180 to 220) and the like.
【0016】ハロゲン化フェノールノボラック型エポキ
シ樹脂としては、例えば日本化薬(株)製、BREN
(エポキシ当量270〜300、臭素含有量35〜37
%、軟化点80〜90℃)等の臭素化フェノールノボラ
ック型エポキシ樹脂等が挙げられる。Examples of halogenated phenol novolac type epoxy resins include BREN manufactured by Nippon Kayaku Co., Ltd.
(Epoxy equivalent 270-300, bromine content 35-37
%, Softening point 80 to 90 ° C.) and the like, and brominated phenol novolac type epoxy resin and the like.
【0017】不飽和一塩基酸としては、アクリル酸、メ
タクリル酸、β−フリルアクリル酸、β−スチリルアク
リル酸、α−シアノケイ皮酸、ケイ皮酸、前記一般式
(1)で示されるアクリル酸オリゴマー、あるいは一般
式(2)で示されるアクリル酸とカプロラクトンとの反
応物等が用いられる。これらの不飽和化合物は単独で、
または組み合わせて用いることができる。Examples of the unsaturated monobasic acid include acrylic acid, methacrylic acid, β-furylacrylic acid, β-styrylacrylic acid, α-cyanocinnamic acid, cinnamic acid, and acrylic acid represented by the general formula (1). An oligomer, a reaction product of acrylic acid represented by the general formula (2) and caprolactone, or the like is used. These unsaturated compounds alone
Alternatively, they can be used in combination.
【0018】本発明の活性光線硬化性樹脂の合成におい
て、これらのエポキシ化合物と不飽和一塩基酸との付加
反応は、常法により行われるが、カルボン酸基/エポキ
シ基のモル比を、0.5〜1.0の範囲とすることが好
ましい。カルボン酸基/エポキシ基のモル比が0.5未
満では露光後の現像処理により光硬化被膜が膨潤しやす
く、1.0を越える場合には、遊離の不飽和カルボン酸
量が多くなるため、皮膚刺激性が強くなる等、安全上好
ましくない傾向にある。In the synthesis of the actinic ray-curable resin of the present invention, the addition reaction between these epoxy compounds and unsaturated monobasic acid is carried out by a conventional method, but the molar ratio of carboxylic acid group / epoxy group is 0. It is preferably in the range of 0.5 to 1.0. If the molar ratio of carboxylic acid group / epoxy group is less than 0.5, the photo-cured film is likely to swell due to the development treatment after exposure, and if it exceeds 1.0, the amount of free unsaturated carboxylic acid is large. It tends to be unfavorable in terms of safety, such as increased skin irritation.
【0019】エポキシ化合物と不飽和一塩基酸との付加
反応物は、例えば前記エポキシ樹脂をメチルエチルケト
ン、メチルセロソルブアセテート、エチルセロソルブア
セテート、シクロヘキサノン等の不活性有機溶剤に溶解
し、触媒としてトリ−n−ブチルアミン、ジエチルシク
ロヘキシルアミン等の三級アミン、塩化ベンジルトリメ
チルアンモニウム、塩化ベンジルトリエチルアンモニウ
ム等の四級アンモニウム塩等を、また重合禁止剤として
ハイドロキノンモノメチルエーテル、p−メトキシフェ
ノール等を用い、70〜100℃で前記不飽和一塩基酸
と上記のモル比の範囲で攪拌反応させることにより得ら
れる。The addition reaction product of an epoxy compound and an unsaturated monobasic acid is prepared by dissolving the above-mentioned epoxy resin in an inert organic solvent such as methyl ethyl ketone, methyl cellosolve acetate, ethyl cellosolve acetate or cyclohexanone, and using tri-n-as a catalyst. A tertiary amine such as butylamine or diethylcyclohexylamine, a quaternary ammonium salt such as benzyltrimethylammonium chloride or benzyltriethylammonium chloride, and hydroquinone monomethyl ether or p-methoxyphenol as a polymerization inhibitor are used at 70 to 100 ° C. It is obtained by stirring and reacting with the unsaturated monobasic acid in the above molar ratio range.
【0020】また、前述の飽和又は不飽和の多塩基酸無
水物としては、例えば無水フタル酸、無水テトラヒドロ
フタル酸、無水ヘキサヒドロフタル酸、無水メチルテト
ラヒドロフタル酸、無水メチル2置換ブテニルテトラヒ
ドロフタル酸、無水イタコン酸、無水コハク酸、無水ト
リカルバリル酸、無水マレイン酸、無水マレイン酸のリ
ノレイン酸付加物、無水クロレンディック酸、メチルシ
クロペンタジエンの無水マレイン酸付加物、無水アルキ
ル化エンドアルキレンテトラヒドロフタル酸等を挙げる
ことができる。Examples of the above-mentioned saturated or unsaturated polybasic acid anhydrides include phthalic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methyl disubstituted butenyltetrahydrophthalic anhydride. Acid, itaconic anhydride, succinic anhydride, tricarballylic anhydride, maleic anhydride, linoleic acid adduct of maleic anhydride, chlorendic anhydride, maleic anhydride adduct of methylcyclopentadiene, anhydrous alkylated endoalkylene tetrahydro Examples thereof include phthalic acid.
【0021】これらの多塩基酸無水物と前記反応不飽和
化合物との付加反応は、アルカリ水溶液による現像性お
よび光硬化膜の膨潤性の点からカルボン酸基/水酸基の
モル比を0.6〜2.0の範囲として常法により行うこ
とが望ましい。前記反応不飽和化合物の内、エポキシ基
が残存している部分では、多塩基酸無水物の二級水酸基
への付加反応により生成するカルボキシル基とエポキシ
基との付加反応が起こり、得られる反応生成物のカルボ
キシル基濃度が低下する。このため、予め、多塩基酸無
水物の使用量を、その低下分に見合うだけ多くすること
が望ましい。The addition reaction of these polybasic acid anhydrides with the above-mentioned reaction unsaturated compound has a carboxylic acid group / hydroxyl group molar ratio of from 0.6 to 10 from the viewpoint of developability with an aqueous alkali solution and swelling of the photo-cured film. It is desirable that the range of 2.0 is carried out by a conventional method. In the portion of the reaction unsaturated compound where the epoxy group remains, the addition reaction between the carboxyl group and the epoxy group generated by the addition reaction of the polybasic acid anhydride to the secondary hydroxyl group occurs, and the resulting reaction product The carboxyl group concentration of the product decreases. Therefore, it is desirable to increase the amount of the polybasic acid anhydride used in advance so as to correspond to the decrease.
【0022】特に好ましい活性光線硬化性樹脂として
は、ビスフェノール型エポキシ樹脂/アクリル酸/無水
テトラヒドロフタル酸(アクリル酸/エポキシ基のモル
比=0.5〜1.0、無水テトラヒドロフタル酸/水酸
基のモル比=0.6〜2)系樹脂、フェノールノボラッ
ク型エポキシ樹脂/アクリル酸/無水テトラヒドロフタ
ル酸(アクリル酸/エポキシ基のモル比=0.5〜1.
0、無水テトラヒドロフタル酸/水酸基のモル比=0.
6〜2)系樹脂、クレゾールノボラック型エポキシ樹脂
/アクリル酸/無水テトラヒドロフタル酸(アクリル酸
/エポキシ基のモル比=0.5〜1.0、無水テトラヒ
ドロフタル酸/水酸基のモル比=0.6〜2)系樹脂等
を挙げることができる。Particularly preferred actinic radiation curable resins include bisphenol type epoxy resin / acrylic acid / tetrahydrophthalic anhydride (molar ratio of acrylic acid / epoxy group = 0.5 to 1.0, tetrahydrophthalic anhydride / hydroxyl group). Molar ratio = 0.6 to 2) system resin, phenol novolac type epoxy resin / acrylic acid / tetrahydrophthalic anhydride (molar ratio of acrylic acid / epoxy group = 0.5 to 1.
0, molar ratio of tetrahydrophthalic anhydride / hydroxyl group = 0.
6-2) based resin, cresol novolac type epoxy resin / acrylic acid / tetrahydrophthalic anhydride (molar ratio of acrylic acid / epoxy group = 0.5 to 1.0, molar ratio of tetrahydrophthalic anhydride / hydroxyl group = 0. 6 to 2) based resins and the like.
【0023】本発明によるレジストインキ組成物は前記
のB成分に対して、A成分を特定の割合で混合せしめる
ことによって目的を達成することができるものであり、
重量比で(A):(B)=5〜30:95〜70好まし
くは10〜20:90〜80が適当な量比である。A成
分は不飽和基を有する液状化合物であり、組成物全体に
対する比率として前述の(A):(B)で示した量比の
範囲を越える場合は、製膜工程における塗膜の乾燥性
や、アルカリ水溶液に対する現像性等の点で好ましくな
い傾向にある。The resist ink composition according to the present invention can achieve the object by mixing the component A with the component B in a specific ratio.
The weight ratio of (A) :( B) = 5 to 30:95 to 70 is preferably 10 to 20:90 to 80. The component A is a liquid compound having an unsaturated group, and when the ratio with respect to the entire composition exceeds the range of the above-mentioned (A) :( B), the drying property of the coating film in the film forming process and However, it tends to be unfavorable in terms of developability with respect to an alkaline aqueous solution.
【0024】本発明のレジストインキ組成物は、活性光
線の照射により遊離ラジカルを生成する光重合開始剤、
すなわちC成分を含有する。本発明のC成分の具体例と
しては、置換又は非置換の多核キノン類、例えば、2−
エチルアントラキノン、2−t−ブチルアントラキノ
ン、オクタメチルアントラキノン、1,2−ベンズアン
トラキノン、2,3−ジフェニルアントラキノン等、ジ
アセチルベンジル等のケトアルドニル化合物、ベンゾイ
ン等のα−ケタルドニルアルコール類及びエーテル類、
α−炭化水素置換芳香族アシロイン類、例えば、α−フ
ェニル−ベンゾイン、α,α−ジエトキシアセトフェノ
ン等、ベンゾフェノン、4,4’−ビスジアルキルアミ
ノベンゾフェノン等の芳香族ケトン類、2−メチルチオ
キサントン、2,4−ジエチルチオキサントン、2−ク
ロルチオキサントン、2−イソプロピルチオキサント
ン、2−エチルチオキサントン等のチオキサントン類、
2−メチル−1−[4−(メチルチオ)フェニル]−2
−モルホリノ−プロパノン−1が用いられ、これらは単
独でも、又は組み合わせて使用してもよい。C成分の好
ましい配合量としては、A成分とB成分の混合物100
重量部に対して2〜30重量部である。The resist ink composition of the present invention comprises a photopolymerization initiator which produces free radicals upon irradiation with actinic rays.
That is, it contains the C component. Specific examples of the component C of the present invention include substituted or unsubstituted polynuclear quinones such as 2-
Ethylanthraquinone, 2-t-butylanthraquinone, octamethylanthraquinone, 1,2-benzanthraquinone, 2,3-diphenylanthraquinone, etc., ketoaldonyl compounds such as diacetylbenzyl, α-ketaldonyl alcohols and ethers such as benzoin,
α-hydrocarbon substituted aromatic acyloins, for example, α-phenyl-benzoin, α, α-diethoxyacetophenone, etc., benzophenone, aromatic ketones such as 4,4′-bisdialkylaminobenzophenone, 2-methylthioxanthone, Thioxanthones such as 2,4-diethylthioxanthone, 2-chlorothioxanthone, 2-isopropylthioxanthone, and 2-ethylthioxanthone,
2-Methyl-1- [4- (methylthio) phenyl] -2
-Morpholino-propanone-1 is used, which may be used alone or in combination. The preferable amount of the component C is 100% of the mixture of the components A and B.
It is 2 to 30 parts by weight with respect to parts by weight.
【0025】本発明のD成分は、1分子中に2個以上の
エポキシ基を有するエポキシ化合物を含有する。このエ
ポキシ化合物としては、例えば、前記のビスフェノール
型エポキシ樹脂、クレゾールノボラック型エポキシ樹
脂、フェノールノボラック型エポキシ樹脂、ハロゲン化
フェノールノボラック型エポキシ樹脂の他、ポリグリシ
ジルアミン型エポキシ樹脂、トリグリシジルイソシアヌ
レート、ジグリシジルビフェニル型エポキシ樹脂、脂環
式エポキシ樹脂等が挙げられる。D成分の好ましい配合
量は、B成分100重量部に対して10〜50重量部で
ある。The component D of the present invention contains an epoxy compound having two or more epoxy groups in one molecule. Examples of the epoxy compound include, for example, bisphenol type epoxy resin, cresol novolac type epoxy resin, phenol novolac type epoxy resin, halogenated phenol novolac type epoxy resin, polyglycidyl amine type epoxy resin, triglycidyl isocyanurate, diester. Examples thereof include glycidyl biphenyl type epoxy resin and alicyclic epoxy resin. The preferable blending amount of the component D is 10 to 50 parts by weight with respect to 100 parts by weight of the component B.
【0026】本発明のレジストインキ組成物には、上記
A、B、C及びD成分以外に、必要に応じて、末端エチ
レン基を少なくとも2個有する光重合可能な不飽和化合
物を含有してもよい。この光重合可能な不飽和化合物と
しては、例えばトリメチロールプロパン、トリメチロー
ルエタン、ペンタエリトリトール、ジペンタエリトリト
ール、1,3−ブチルグリコール、1,4−ブチレング
リコール、1,5−ペンタンジオール、ポリカプロラク
トンジオール、ポリプロピレングリコール、デカメチレ
ングリコール、グリセリン、ネオペンチルグリコール、
2,2−ビス[4,4’−(2−ヒドロキシエトキシ)
フェニル]プロパン、トリス(2−ヒドロキシエチル)
イソシアヌル酸等の多価アルコールとアクリル酸又はメ
タクリル酸とのエステル、無水フタル酸−ジエチレング
リコール−アクリル酸(1/2/2のモル比)縮合物、
トリメチロールプロパン−テトラヒドロフタル酸−アク
リル酸(2/1/4のモル比)縮合物等の末端にアクリ
ロイルオキシ基及び/又はメタクリロイルオキシ基を有
する低分子ポリエステル樹脂等が挙げられる。In addition to the components A, B, C and D, the resist ink composition of the present invention may optionally contain a photopolymerizable unsaturated compound having at least two terminal ethylene groups. Good. Examples of the photopolymerizable unsaturated compound include trimethylolpropane, trimethylolethane, pentaerythritol, dipentaerythritol, 1,3-butyl glycol, 1,4-butylene glycol, 1,5-pentanediol and polycaprolactone. Diol, polypropylene glycol, decamethylene glycol, glycerin, neopentyl glycol,
2,2-bis [4,4 '-(2-hydroxyethoxy)
Phenyl] propane, tris (2-hydroxyethyl)
Ester of polyhydric alcohol such as isocyanuric acid and acrylic acid or methacrylic acid, phthalic anhydride-diethylene glycol-acrylic acid (molar ratio of 1/2/2) condensate,
A low molecular weight polyester resin having an acryloyloxy group and / or a methacryloyloxy group at the terminal of a trimethylolpropane-tetrahydrophthalic acid-acrylic acid (molar ratio of 2/1/4) condensate and the like can be mentioned.
【0027】また、特公昭52−43092号公報等に
記載されているジオールモノアクリレート又はジオール
モノメタクリレートとジイソシアネートとの反応生成
物、特開昭57−55914号公報等に記載されている
ジオールモノアクリレート/2価アルコール/トリメチ
ルヘキサメチレンジイソシアネート反応物、あるいはイ
ソシアネートエチルメタクリレート/水(2/1のモル
比)反応物等を用いることもできる。Further, the reaction products of diol monoacrylate or diol monomethacrylate and diisocyanate described in JP-B-52-43092 and the like, and diol monoacrylate described in JP-A-57-55914 and the like. It is also possible to use a / dihydric alcohol / trimethylhexamethylene diisocyanate reaction product, or an isocyanate ethyl methacrylate / water (2/1 molar ratio) reaction product.
【0028】さらに、本発明によるレジストインキ組成
物には、微粒状充填剤を含有してもよい。微粒状充填剤
の具体的例としては、例えばタルク、シリカ、酸化チタ
ン、クレイ、炭酸カルシウム、含水珪酸、水酸化アルミ
ニウム、アルミナ、硫酸バリウム、三酸化アンチモン、
炭酸マグネシウム、マイカ粉、珪酸アルミニウム、珪酸
マグネシウム等が用い得る。微粒状充填剤の粒径は、解
像度、硬化被膜の密着性等の低下防止の点から、好まし
くは、0.01〜10μm、より好ましくは0.01〜
1.5μmのものが用い得る。微粒状充填剤はレジスト
インキ組成物中に均一に分散されていることが好まし
い。Further, the resist ink composition according to the present invention may contain a fine particulate filler. Specific examples of the fine particulate filler include talc, silica, titanium oxide, clay, calcium carbonate, hydrous silicic acid, aluminum hydroxide, alumina, barium sulfate, antimony trioxide,
Magnesium carbonate, mica powder, aluminum silicate, magnesium silicate and the like can be used. The particle size of the fine particulate filler is preferably 0.01 to 10 μm, and more preferably 0.01 to 10 μm from the viewpoint of preventing deterioration of resolution, adhesion of the cured film and the like.
One having a thickness of 1.5 μm can be used. The fine particulate filler is preferably uniformly dispersed in the resist ink composition.
【0029】微粒状充填剤と前記光重合性化合物との間
の接着力を増すために、微粒状充填剤の表面を、水酸
基、アミノ基、エポキシ基、ビニル基等の官能基を有す
るシランカップリング剤で処理することもできる。シラ
ンカップリング剤としては、例えばγ−アミノプロピル
トリエトキシシラン、β−アミノエチル−γ−アミノプ
ロピルトリメトキシシラン、γ−グリシドオキシプロピ
ルメトキシシラン、γ−メタクリロキシプロピルトリメ
トキシシラン等が挙げられる。In order to increase the adhesive force between the fine particulate filler and the photopolymerizable compound, the surface of the fine particulate filler has a silane cup having a functional group such as a hydroxyl group, an amino group, an epoxy group or a vinyl group. It can also be treated with a ring agent. Examples of the silane coupling agent include γ-aminopropyltriethoxysilane, β-aminoethyl-γ-aminopropyltrimethoxysilane, γ-glycidoxypropylmethoxysilane, and γ-methacryloxypropyltrimethoxysilane. .
【0030】さらに本発明によるレジストインキ組成物
には、他の補助添加剤を含有してもよい。補助添加剤と
しては、ハイドロキノンモノメチルエーテル、p−メト
キシフェノール等の重合禁止剤、ベンゾトリアゾール、
5−アミノ−1,3,4−チアジアゾール−2−チオー
ル、5−メルカプト−1H−1,2,4−トリアゾール
等の密着性向上剤、フタロシアニングリーン等の顔料、
三酸化アンチモン等の難燃剤、ジシアンジアミド、三フ
ッ化ホウ素・第二アミン複合物等のエポキシ樹脂の潜在
性硬化剤等が挙げられる。また、レジスト塗膜を作成後
の塗膜表面の平滑性を促進する目的で、レベリング剤、
消泡剤等も補助添加剤として含有してもよい。これには
米国モンサント社の「モダフロー」、共栄社油脂(株)
社の「AC−300」等が使用できる。Further, the resist ink composition according to the present invention may contain other auxiliary additives. As auxiliary additives, hydroquinone monomethyl ether, polymerization inhibitors such as p-methoxyphenol, benzotriazole,
Adhesion improvers such as 5-amino-1,3,4-thiadiazole-2-thiol and 5-mercapto-1H-1,2,4-triazole, pigments such as phthalocyanine green,
Examples thereof include flame retardants such as antimony trioxide, latent curing agents for epoxy resins such as dicyandiamide and boron trifluoride / secondary amine composites. Further, for the purpose of promoting the smoothness of the coating film surface after forming the resist coating film, a leveling agent,
A defoaming agent or the like may also be contained as an auxiliary additive. This includes Monsanto's "Modaflow", Kyoeisha Yushi Co., Ltd.
"AC-300" of the company can be used.
【0031】本発明のレジストインキ組成物は、ディッ
プコート法、ロールコート法、カーテンコート法、スク
リーン印刷法等の常法により、保護すべきプリント基板
上に直接塗装し、厚さ10〜150μmの感光性レジス
ト層を容易に形成することができる。塗装にあたり必要
ならば組成物を溶剤に溶解させて行うこともできる。こ
の溶剤としては、例えば、メチルエチルケトン、メチル
セロソルブアセテート、エチルセロソルブアセテート、
シクロヘキサノン、メチルセロソルブ、プロピレングリ
コールモノメチルエーテルアセテート、塩化メチレン、
プロピレングリコールモノメチルエーテル等を挙げるこ
とができる。The resist ink composition of the present invention is directly coated on a printed circuit board to be protected by a conventional method such as a dip coating method, a roll coating method, a curtain coating method and a screen printing method, and has a thickness of 10 to 150 μm. The photosensitive resist layer can be easily formed. If necessary, the composition may be dissolved in a solvent for coating. Examples of the solvent include methyl ethyl ketone, methyl cellosolve acetate, ethyl cellosolve acetate,
Cyclohexanone, methyl cellosolve, propylene glycol monomethyl ether acetate, methylene chloride,
Propylene glycol monomethyl ether etc. can be mentioned.
【0032】こうして形成されたレジスト被膜の露光及
び現像は、常法により行われる。すなわち、後記する加
熱処理温度以下での加熱乾燥により溶剤を揮散せしめ、
光源として超高圧水銀灯、高圧水銀灯等を用いて該レジ
スト被膜の上に直接ネガフィルムを密着させて像状に露
光した後、ネガフィルムを取り外して現像する。現像処
理に用いられる現像液としては、アルカリ水溶液が用い
られ、その塩基としては、リン酸ナトリウム、リン酸カ
リウム等のアルカリ金属リン酸塩、炭酸ナトリウム等の
アルカリ金属炭酸塩等が例示でき、特に炭酸ナトリウム
の水溶液が好ましい。The exposure and development of the resist film thus formed are carried out by a conventional method. That is, the solvent is volatilized by heating and drying at the heat treatment temperature described below,
A super-high pressure mercury lamp, a high pressure mercury lamp, or the like is used as a light source, and a negative film is directly adhered to the resist film to expose it imagewise, and then the negative film is removed and developed. As the developer used in the development treatment, an aqueous alkali solution is used, and examples of the base include alkali metal phosphates such as sodium phosphate and potassium phosphate, alkali metal carbonates such as sodium carbonate, and the like. An aqueous solution of sodium carbonate is preferred.
【0033】上記の方法でパターンを形成されたレジス
ト被膜は、通常のエッチング、メッキ等のための耐食膜
としての特性を持っているが、現像後に80〜200℃
で加熱処理を行うことで、より密着性、耐熱性、耐溶剤
性、水溶性フラックス耐性等の特性を向上でき、ソルダ
ーレジストとしての特性を満足する永久的な保護マスク
が得られる。The resist film patterned by the above method has characteristics as a corrosion resistant film for usual etching, plating, etc., but is 80 to 200 ° C. after development.
By performing the heat treatment in step 1, the properties such as adhesion, heat resistance, solvent resistance, and water-soluble flux resistance can be further improved, and a permanent protective mask satisfying the properties as a solder resist can be obtained.
【0034】[0034]
【実施例】次に、本発明を実施例に基づいて具体的に詳
述するが、本発明はこれに限定されるものではない。な
お、以下各例中の「部」及び「%」は、特記されていな
い限り重量基準である。実施例及び比較例に使用する組
成物の一部であるA成分及びB成分を下記の方法で合成
した。 A成分;不飽和化合物溶液の合成 温度計、攪拌装置、冷却管を備えた三つ口フラスコに、
EXA4032(大日本インキ化学工業社製エポキシ樹
脂 エポキシ当量147)を380部、エチルセロソル
ブアセテート239部、N,N−ジメチルベンジルアミ
ン0.6部、ハイドロキノンモノメチルエーテル0.2
部を加えて110℃に上昇し、均一に溶解させた後、反
応温度を110℃に保ちながら1時間かけてアクリル酸
177部を滴下した。滴下後110℃で8時間攪拌を続
け、不揮発分70%の不飽和化合物溶液(A成分)を得
た。反応生成物の酸価は1(KOH・mg/g)以下で
あった。 B成分;活性光線硬化性樹脂溶液の合成 温度計、攪拌装置、冷却管を備えた三つ口フラスコに、
エピコート828(シェル社製ビスフェノール型エポキ
シ樹脂 エポキシ当量190)を380部、プロピレン
グリコールモノメチルエーテルアセテート300部、
N,N−ジメチルベンジルアミン0.6部、ハイドロキ
ノンモノメチルエーテル0.2部を加えて110℃に昇
温し、均一に溶解させた後、反応温度を110℃に保ち
ながら1時間かけてアクリル酸144部を滴下した。滴
下後110℃で10時間攪拌を続け、反応系の酸価を1
(KOH・mg/g)以下にした後、無水テトラヒドロ
フタル酸194部加え、110℃で約10時間攪拌を続
け、不揮発分71%の樹脂溶液(B成分)を得た。反応
生成物の酸価は100(KOH・mg/g)であった。EXAMPLES The present invention will now be specifically described based on examples, but the present invention is not limited thereto. In addition, "parts" and "%" in the following examples are based on weight unless otherwise specified. The components A and B, which are parts of the compositions used in Examples and Comparative Examples, were synthesized by the following method. Component A: Synthesis of unsaturated compound solution In a three-necked flask equipped with a thermometer, a stirrer, and a condenser,
EXA4032 (Dainippon Ink and Chemicals, Inc. epoxy resin epoxide equivalent 147) 380 parts, ethyl cellosolve acetate 239 parts, N, N-dimethylbenzylamine 0.6 parts, hydroquinone monomethyl ether 0.2.
After the temperature was raised to 110 ° C. and the solution was uniformly dissolved, 177 parts of acrylic acid was added dropwise over 1 hour while maintaining the reaction temperature at 110 ° C. After the dropping, stirring was continued at 110 ° C. for 8 hours to obtain an unsaturated compound solution (component A) having a nonvolatile content of 70%. The acid value of the reaction product was 1 (KOH · mg / g) or less. Component B: Synthesis of actinic ray curable resin solution In a three-necked flask equipped with a thermometer, a stirrer, and a cooling tube,
380 parts of Epicoat 828 (bisphenol type epoxy resin manufactured by Shell Co., epoxy equivalent 190), 300 parts of propylene glycol monomethyl ether acetate,
After 0.6 part of N, N-dimethylbenzylamine and 0.2 part of hydroquinone monomethyl ether were added and the temperature was raised to 110 ° C. to uniformly dissolve them, acrylic acid was added over 1 hour while maintaining the reaction temperature at 110 ° C. 144 parts was dropped. After the dropping, stirring is continued at 110 ° C. for 10 hours to adjust the acid value of the reaction system to 1
After adjusting to (KOH · mg / g) or less, 194 parts of tetrahydrophthalic anhydride was added, and stirring was continued at 110 ° C. for about 10 hours to obtain a resin solution (component B) having a nonvolatile content of 71%. The acid value of the reaction product was 100 (KOH.mg/g).
【0035】実施例1〜3、比較例1 (1)レジストインキ組成物の調製 前記のA成分;不飽和化合物溶液(不揮発分70%)、
B成分;活性光線硬化性樹脂溶液(不揮発分71%)、
及びC成分;ベンゾフェノン、ジエチルアミノベンゾフ
ェノン、D成分;トリグリシジルイソシアヌレート、光
重合可能な不飽和化合物;トリメチロールプロパントリ
アクリレート、微粒状充填剤;硫酸バリウム、及び補助
添加剤として、顔料;フタロシアニングリーン:エポキ
シ樹脂潜在性硬化剤;ジシアンジアミド、重合禁止剤;
ハイドロキノンモノメチルエーテル、レベリング剤/消
泡剤;モダフロー、AC−300、溶剤;プロピレング
リコールモノメチルエーテルアセテートを第1表に示し
た割合(重量部)で配合し、3本ロールミルを用いて混
練し、レジストインキ組成物を調整した。Examples 1 to 3, Comparative Example 1 (1) Preparation of Resist Ink Composition Component A above; unsaturated compound solution (nonvolatile content 70%),
B component; actinic ray curable resin solution (nonvolatile content 71%),
And C component; benzophenone, diethylaminobenzophenone, D component; triglycidyl isocyanurate, a photopolymerizable unsaturated compound, trimethylolpropane triacrylate, fine particulate filler, barium sulfate, and as an auxiliary additive, pigment; phthalocyanine green: Epoxy resin latent curing agent; dicyandiamide, polymerization inhibitor;
Hydroquinone monomethyl ether, leveling agent / defoaming agent; Modaflow, AC-300, solvent; Propylene glycol monomethyl ether acetate were mixed in a ratio (parts by weight) shown in Table 1 and kneaded using a three-roll mill to form a resist. An ink composition was prepared.
【0036】(2)レジスト被膜の形成 脱脂洗浄した厚さ1.6mmのプリント配線基板に、前
記(1)で調製したレジストインキ組成物を25μmの
厚さで塗布し、熱風乾燥機中で70℃の温度で30分間
乾燥させた後、ネガフィルムを密着させ、露光現像をし
た後、さらに熱風乾燥機中で140℃の温度で50分間
熱処理を行い、パターンを形成させた。(2) Formation of resist film The resist ink composition prepared in (1) above was applied in a thickness of 25 μm to a degreased and washed printed wiring board having a thickness of 1.6 mm, and the resist ink composition was dried in a hot air dryer at 70 μm. After drying at a temperature of 30 ° C. for 30 minutes, a negative film was adhered thereto, exposed and developed, and then heat-treated at a temperature of 140 ° C. for 50 minutes in a hot air dryer to form a pattern.
【0037】(3)レジスト被膜の評価 塗膜の乾燥性、露光感度、現像性については70℃の温
度で30分間乾燥したものについて試験し、基板との密
着性、はんだ耐熱性、水溶性フラックス耐性、耐薬品
性、耐溶剤性及び絶縁抵抗については、前記のようにし
て露光、現像した後、140℃で50分間加熱を行い完
全硬化した後のレジスト被膜について試験した。(3) Evaluation of resist film The drying property, exposure sensitivity, and developability of the coating film were tested for those dried for 30 minutes at a temperature of 70 ° C., and adhesion to a substrate, solder heat resistance, and water-soluble flux were tested. With respect to resistance, chemical resistance, solvent resistance and insulation resistance, the resist film after being exposed and developed as described above and then completely cured by heating at 140 ° C. for 50 minutes was tested.
【0038】各評価については以下に示すように行っ
た。 (3−1)塗膜の乾燥性 JIS K−5400に準じて試験した。評価のランク
は次のとおりである。 ○:まったくタックが認められないもの △:わずかにタックが認められるもの ×:顕著にタックが認められるものEach evaluation was performed as shown below. (3-1) Dryability of coating film Tested according to JIS K-5400. The evaluation ranks are as follows. ◯: No tack is observed at all Δ: Slight tack is observed x: Significant tack is observed
【0039】(3−2)露光感度 コダックステップタブレットNo2(イーストマンコダ
ック社製、光学濃度段差0.15、21段差のネガフィ
ルム)を塗膜に密着し、5kw超高圧水銀ランプ
[(株)オーク製作所製、HMW−201GX]を用い
て波長365nm付近の紫外線を照度25mw/cm2
で20秒間(光量500mJ/cm2 )照射し後記(3
−3)の弱アルカリ水溶液に対する現像性試験と同様に
処理して、銅箔上に残存するレジスト被膜の段数を調べ
た。この評価法では、高感度であるほど残存する段数が
多くなる。(3-2) Exposure Sensitivity Kodak Step Tablet No. 2 (manufactured by Eastman Kodak Co., negative film with optical density steps of 0.15 and 21 steps) was adhered to the coating film, and a 5 kW ultra high pressure mercury lamp [Co., Ltd.] Oak Manufacturing Co., Ltd., HMW-201GX] is used to irradiate ultraviolet light having a wavelength of about 365 nm with an illuminance of 25 mw / cm 2.
It is irradiated for 20 seconds (light intensity 500 mJ / cm 2 ) and described later (3
The treatment was conducted in the same manner as in the developing property test for the weak alkaline aqueous solution of -3), and the number of steps of the resist film remaining on the copper foil was examined. In this evaluation method, the higher the sensitivity, the greater the number of remaining stages.
【0040】(3−3)弱アルカリ水溶液に対する現像
性 前記(3−2)のようにして露光処理したものについ
て、1%の炭酸ナトリウム水溶液を使用して、現像機
(吉谷商会(株)製、YCE−85)により、2.1K
g/cm2 の圧力下、30℃で60秒間現像を行った。
現像後、30倍に拡大して視察し、残存するレジスト被
膜を目視で評価した。評価のランクは次のとおりであ
る。 ○:現像性の良好なもの(ネガフィルムによって遮光し
た部分の銅箔上にレジスト被膜が全く残らないもの。) ×:現像性の不良なもの(ネガフィルムによって遮光し
た部分の銅箔上にレジスト被膜が残るもの。)(3-3) Developability in Weak Alkaline Aqueous Solution With respect to the product subjected to the exposure treatment as in the above (3-2), a developing machine (manufactured by Yoshitani Shokai Co., Ltd.) was used using a 1% aqueous sodium carbonate solution. , YCE-85), 2.1K
Development was carried out at 30 ° C. for 60 seconds under a pressure of g / cm 2 .
After the development, the product was magnified 30 times and visually inspected, and the remaining resist film was visually evaluated. The evaluation ranks are as follows. ◯: Good developability (no resist film left on the copper foil in the part shielded by the negative film) ×: Poor developability (resist on copper foil in the part shielded by the negative film) The film remains.)
【0041】(3−4)レジスト被膜硬度 前記(3−2)及び(3−3)のようにして露光、現像
した後、140℃で50分間加熱したレジスト被膜の硬
度を、JIS K−5400の試験法に準じて鉛筆硬度
試験機を用いて荷重1Kgを掛けた際、レジスト被膜に
傷が付かない最も高硬度をもって表示した。鉛筆は、
「三菱ハイユニ」(三菱鉛筆(株)製)を使用した。(3-4) Hardness of Resist Coating The hardness of the resist coating, which was heated at 140 ° C. for 50 minutes after being exposed and developed as described in (3-2) and (3-3) above, was measured according to JIS K-5400. When a load of 1 kg was applied using a pencil hardness tester in accordance with the test method of No. 1, it was indicated as the highest hardness that the resist film was not scratched. Pencils
"Mitsubishi High Uni" (manufactured by Mitsubishi Pencil Co., Ltd.) was used.
【0042】(3−5)基板との密着性 前記(3−2)及び(3−3)のようにして露光、現像
した後、140℃で50分間加熱したレジスト被膜に、
少なくとも100個の碁盤目が得られるようにクロスカ
ットを入れ、次いで、粘着テープを用いて、ピーリング
試験を行い、碁盤目の剥離の状態を目視によって評価し
た。評価のランクは次のとおりである。 ○:全ての測定点で全く剥離が認められなかったもの △:100の測定点中1〜20の点で剥離が認められた
もの ×:100の測定点中21以上の点で剥離が認められた
もの(3-5) Adhesion with Substrate After exposing and developing as in the above (3-2) and (3-3), the resist coating film heated at 140 ° C. for 50 minutes was used.
A cross cut was inserted so that at least 100 crosses were obtained, and then a peeling test was performed using an adhesive tape, and the state of peeling of the crosses was visually evaluated. The evaluation ranks are as follows. ◯: No peeling was observed at all measuring points. Δ: Peeling was observed at 1 to 20 points among 100 measuring points. X: Peeling was observed at 21 points or more among 100 measuring points. What
【0043】(3−6)はんだ耐熱性 前記(3−2)及び(3−3)のように露光、現像した
後、140℃で50分間加熱したレジスト被膜に付い
て、JIS D−0202に準じて、260℃のはんだ
浴に20秒間浸漬し、浸漬後のレジスト被膜の状態を評
価した。評価のランクは次のとおりである。 ○:レジスト被膜の外観に異常なし ×:レジスト被膜の外観に膨れ、溶融、剥離あり(3-6) Solder heat resistance After exposing and developing as in the above (3-2) and (3-3), the resist coating which was heated at 140 ° C. for 50 minutes was attached to JIS D-0202. According to the above, the state of the resist film after the immersion was evaluated by immersing it in a solder bath at 260 ° C. for 20 seconds. The evaluation ranks are as follows. ◯: The appearance of the resist coating is normal. ×: The appearance of the resist coating is swollen, melted, and peeled.
【0044】(3−7)水溶性フラックス耐性 前記(3−2)及び(3−3)のようにして露光、現像
した後、140℃で50分加熱してパターン形成した基
板を水溶性フラックスソルボンドNo.K−183(ケ
ンコエレクトロニクス社製)に5秒間浸漬し、15秒間
空気中で放置した後、260℃に保ったはんだ浴の表面
に5秒間浮かせた。その後この基板を取り出し5分間放
冷し、これを1サイクルとして、5サイクル処理した
後、粘着テープを用いてピーリング試験を行い、銅回路
上及び端子上の剥離の状態を目視によって評価した。評
価のランクは次のとおりである。 ○:剥がれが認められなかったもの △:1〜4個所で剥がれが認められたもの ×:5個以上の剥がれが認められたもの(3-7) Water-soluble flux resistance After exposure and development as described in (3-2) and (3-3) above, the patterned substrate was heated at 140 ° C. for 50 minutes to form a water-soluble flux. Solbond No. It was immersed in K-183 (manufactured by Kenko Electronics Co., Ltd.) for 5 seconds, left in the air for 15 seconds, and then floated on the surface of the solder bath kept at 260 ° C. for 5 seconds. After that, the substrate was taken out and allowed to cool for 5 minutes, and this was treated as one cycle for 5 cycles. Then, a peeling test was performed using an adhesive tape, and the state of peeling on the copper circuit and the terminal was visually evaluated. The evaluation ranks are as follows. ◯: No peeling was observed Δ: Peeling was observed at 1 to 4 places x: Five or more peelings were observed
【0045】(3−8)耐薬品性 前記(3−2)及び(3−3)のようにして露光、現像
し、140℃で50分間加熱したレジスト被膜に対して
下記の薬品にそれぞれ25℃で1時間浸漬し、浸漬後の
外観、密着性を評価した。 耐酸性 10重量%HCl水溶液 耐アルカリ性 10重量%NaOH水溶液 耐溶剤性 1,1,1−トリクロルエタン 塩化メチレン イソプロピルアルコール 評価のランクは次のとおりである。 ○:異常なし ×:溶解又は膨潤あり(3-8) Chemical resistance The resist film which has been exposed and developed as described in the above (3-2) and (3-3) and heated at 140 ° C. for 50 minutes has the following chemicals of 25 each. Immersion was performed at 0 ° C. for 1 hour, and the appearance and adhesion after immersion were evaluated. Acid resistance 10 wt% HCl aqueous solution Alkali resistance 10 wt% NaOH aqueous solution Solvent resistance 1,1,1-Trichloroethane Methylene chloride Isopropyl alcohol The evaluation ranks are as follows. ○: No abnormality ×: Dissolved or swollen
【0046】(3−9)絶縁抵抗 前記(3−2)及び(3−3)のようにして露光、現像
し、140℃で50分間加熱したレジスト被膜に、JI
SZ−3197に従って円形電極を作成し、常態及び5
5℃、95%RH、100時間後の絶縁性を東亜電波
(株)製、Super Megohmeter Mod
el SM−5hを用いて測定した。(3-9) Insulation Resistance JI was applied to the resist film which was exposed and developed as in (3-2) and (3-3) above and heated at 140 ° C. for 50 minutes.
A circular electrode was prepared according to SZ-3197, and the normal state and 5
Insulation after 5 hours at 95% RH and 100 hours, Toa Denpa Co., Ltd., Super Megoheter Mod
It was measured using EL SM-5h.
【0047】(4)結果 以上の評価結果をまとめて表すと第2表に示したとおり
となった。同表の結果より明らかなように本発明のレジ
ストインキ組成物は従来品に比較して露光感度が優れ、
乾燥性、現像性等の特性も従来品並みのレベルを有す
る。また、本発明のレジストインキ組成物を基板に被覆
したレジスト被膜は硬度、電気絶縁抵抗、水溶性フラッ
クス耐性及び耐薬品性が従来品より優れ、密着性、はん
だ耐熱性も従来品並みのレベルを有する。(4) Results The above evaluation results are summarized and shown in Table 2. As is clear from the results in the table, the resist ink composition of the present invention has excellent exposure sensitivity as compared with conventional products,
The properties such as drying property and developing property are at the same level as conventional products. In addition, the resist film obtained by coating the resist ink composition of the present invention on a substrate is superior in hardness, electrical insulation resistance, water-soluble flux resistance and chemical resistance to conventional products, and the adhesion and solder heat resistance are at the same level as conventional products. Have.
【0048】[0048]
【発明の効果】本発明のレジストインキ組成物は、露光
感度が優れ、短い露光時間で容易に光硬化することが可
能であり、炭酸ナトリウム等のような弱アルカリ性水溶
液で容易に現像することができる。また、これを基板に
被覆したレジスト被膜は硬度、電気絶縁抵抗及び耐薬品
性が従来品より優れている。したがって、一歩進んだ高
信頼性のソルダーレジスト膜として使用することができ
る。しかも本発明のレジストインキ組成物よりなるレジ
スト被膜は、従来の同種品にて不十分であった水溶性フ
ラックス耐性が一段と向上しているので、実用的に充分
使用に耐え得る水溶性フラックス耐性レジストとして好
適に使用することができる。本発明のレジストインキ組
成物は、上記したソルダーレジスト以外に、化学メッキ
用レジスト等の主としてプリント配線版分野にて使用さ
れる各種レジスト用のインキ組成物としても利用するこ
とができる。The resist ink composition of the present invention has excellent exposure sensitivity, can be easily photocured in a short exposure time, and can be easily developed with a weak alkaline aqueous solution such as sodium carbonate. it can. In addition, the resist film obtained by coating this on a substrate is superior in hardness, electric insulation resistance and chemical resistance to conventional products. Therefore, it can be used as an advanced highly reliable solder resist film. Moreover, since the resist coating comprising the resist ink composition of the present invention has a further improved water-soluble flux resistance, which was insufficient in the conventional similar products, it is a water-soluble flux-resistant resist that can withstand practically sufficient use. Can be preferably used as. The resist ink composition of the present invention can be used as an ink composition for various resists mainly used in the field of printed wiring boards such as chemical plating resists, in addition to the solder resists described above.
【表1】 [Table 1]
【表2】 [Table 2]
フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 G03F 7/004 503 7/028 7/032 501 7/038 H05K 3/28 D 7511−4E // C08F 299/02 MRV (72)発明者 吉村 政彦 京都府宇治市宇治小桜23番地 ユニチカ株 式会社中央研究所内 (72)発明者 松井 誠 京都府宇治市宇治小桜23番地 ユニチカ株 式会社中央研究所内Continuation of the front page (51) Int.Cl. 5 Identification number Reference number within the agency FI Technical display location G03F 7/004 503 7/028 7/032 501 7/038 H05K 3/28 D 7511-4E // C08F 299 / 02 MRV (72) Inventor Masahiko Yoshimura 23 Uji Kozakura, Uji City, Kyoto Prefecture Unitika Co., Ltd. Central Research Laboratory (72) Inventor Makoto Matsui 23 Uji Kozakura, Uji City, Kyoto Prefecture Unitika Co., Ltd. Central Research Center
Claims (1)
タレンと不飽和一塩基酸とを反応せしめて得られる不飽
和化合物、(B)エポキシ化合物と不飽和一塩基酸との
反応物と、飽和又は不飽和多塩基酸無水物とを反応せし
めて得られる活性光線硬化性樹脂、(C)光重合開始剤
及び(D)一分子中に2個以上のエポキシ基を有するエ
ポキシ化合物を含有してなり、不飽和化合物(A)と活
性光線硬化性樹脂(B)の混合割合が重量比で5〜3
0:95〜70であり、光重合開始剤(C)を不飽和化
合物(A)と活性光線硬化性樹脂(B)の混合物100
重量部に対して2〜30重量部、エポキシ化合物(D)
を活性光線硬化性樹脂(B)100重量部に対して10
〜50重量部含むことを特徴とするレジストインキ組成
物。1. An unsaturated compound obtained by reacting (A) 1,6-diglycidyloxynaphthalene with an unsaturated monobasic acid, (B) a reaction product of an epoxy compound and an unsaturated monobasic acid, It contains an actinic ray curable resin obtained by reacting with a saturated or unsaturated polybasic acid anhydride, (C) a photopolymerization initiator and (D) an epoxy compound having two or more epoxy groups in one molecule. And the mixing ratio of the unsaturated compound (A) and the actinic radiation curable resin (B) is 5 to 3 by weight.
0:95 to 70, and the mixture of the unsaturated compound (A) and the actinic radiation curable resin (B) as the photopolymerization initiator (C) 100.
2 to 30 parts by weight based on parts by weight, epoxy compound (D)
To 10 parts by weight of actinic ray curable resin (B).
A resist ink composition, characterized in that it comprises from about 50 parts by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14155193A JPH06332169A (en) | 1993-05-19 | 1993-05-19 | Resist ink composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14155193A JPH06332169A (en) | 1993-05-19 | 1993-05-19 | Resist ink composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06332169A true JPH06332169A (en) | 1994-12-02 |
Family
ID=15294599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14155193A Pending JPH06332169A (en) | 1993-05-19 | 1993-05-19 | Resist ink composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06332169A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2301826A (en) * | 1995-06-06 | 1996-12-18 | Taiyo Ink Mfg Co Ltd | Photocurable thermoplastic resin composition developable with aqueous alkali |
| WO2004108790A1 (en) * | 2003-06-04 | 2004-12-16 | Sekisui Chemical Co., Ltd. | Curing resin composition, sealing material for liquid crystal display device and liquid crystal display device |
| JP2005018022A (en) * | 2003-06-04 | 2005-01-20 | Sekisui Chem Co Ltd | Curable resin composition for liquid crystal display element, sealing agent for liquid crystal display element, sealing agent for liquid crystal display element, vertical conduction material for liquid crystal display element, and liquid crystal display device |
| JP2005060651A (en) * | 2003-07-31 | 2005-03-10 | Sekisui Chem Co Ltd | Curable resin composition, liquid crystal display element sealing agent, liquid crystal display element sealing agent, liquid crystal display element vertical conduction material, and liquid crystal display element |
| JP2015164990A (en) * | 2014-03-03 | 2015-09-17 | Dic株式会社 | (meth) acryloyl group-containing resin, method of producing (meth) acryloyl group-containing resin, curable resin material, and cured product thereof, and resist material |
| JP2015168775A (en) * | 2014-03-07 | 2015-09-28 | Dic株式会社 | Acid group-containing (meth)acrylate resin, production method of acid group-containing (meth)acrylate resin, curable resin material, cured product of the same, and resist material |
| JP2015168776A (en) * | 2014-03-07 | 2015-09-28 | Dic株式会社 | Acid group-containing (meth) acrylate resin, method for producing acid group-containing (meth) acrylate resin, curable resin material, cured product thereof, and resist material |
-
1993
- 1993-05-19 JP JP14155193A patent/JPH06332169A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2301826A (en) * | 1995-06-06 | 1996-12-18 | Taiyo Ink Mfg Co Ltd | Photocurable thermoplastic resin composition developable with aqueous alkali |
| GB2301826B (en) * | 1995-06-06 | 1999-07-14 | Taiyo Ink Mfg Co Ltd | Photocurable, thermosetting resin composition developable with aqueous alkali solution |
| US5948514A (en) * | 1995-06-06 | 1999-09-07 | Taiyo Ink Manufacturing Co., Ltd. | Photocurable thermosettting resin composition developable with aqueous alkali solution |
| WO2004108790A1 (en) * | 2003-06-04 | 2004-12-16 | Sekisui Chemical Co., Ltd. | Curing resin composition, sealing material for liquid crystal display device and liquid crystal display device |
| JP2005018022A (en) * | 2003-06-04 | 2005-01-20 | Sekisui Chem Co Ltd | Curable resin composition for liquid crystal display element, sealing agent for liquid crystal display element, sealing agent for liquid crystal display element, vertical conduction material for liquid crystal display element, and liquid crystal display device |
| JP2005060651A (en) * | 2003-07-31 | 2005-03-10 | Sekisui Chem Co Ltd | Curable resin composition, liquid crystal display element sealing agent, liquid crystal display element sealing agent, liquid crystal display element vertical conduction material, and liquid crystal display element |
| JP2015164990A (en) * | 2014-03-03 | 2015-09-17 | Dic株式会社 | (meth) acryloyl group-containing resin, method of producing (meth) acryloyl group-containing resin, curable resin material, and cured product thereof, and resist material |
| JP2015168775A (en) * | 2014-03-07 | 2015-09-28 | Dic株式会社 | Acid group-containing (meth)acrylate resin, production method of acid group-containing (meth)acrylate resin, curable resin material, cured product of the same, and resist material |
| JP2015168776A (en) * | 2014-03-07 | 2015-09-28 | Dic株式会社 | Acid group-containing (meth) acrylate resin, method for producing acid group-containing (meth) acrylate resin, curable resin material, cured product thereof, and resist material |
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