JPH06216218A - Semiconductor manufacturing equipment - Google Patents

Abstract

(57) [Abstract] [Purpose] To prevent damage such as chipping, cracks and scratches on glass wafers processed by semiconductor manufacturing equipment. In a semiconductor manufacturing apparatus for processing a glass wafer having a semiconductor thin film formed on a glass substrate, a buffer made of resin having predetermined elasticity and rigidity is provided at a contact portion of a jig used for handling or holding the glass wafer. Attach the member. For example, this jig is composed of a stopper 5 to which a cushioning member 6 is attached, which abuts and holds a glass wafer 4 placed on a rotary table 2 and subjected to a centrifugal force. The rotary table 2 and the stopper 5 are integrally mounted in the ion implantation vacuum chamber 1. In addition,
By using a heat conductive rubber having a flat surface as the pedestal 3 interposed between the rotary table 2 and the glass wafer 4, the glass wafer can be prevented from being damaged.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus for processing a glass wafer having a semiconductor thin film formed on a glass substrate. More specifically, the present invention relates to a glass wafer damage prevention structure.

[0002]

2. Description of the Related Art A glass wafer having a semiconductor thin film formed on a glass substrate is used for manufacturing, for example, an active matrix type liquid crystal display device. Unlike a silicon wafer used for usual semiconductor device manufacturing, a glass wafer is transparent and suitable as an image display device. A normal thin film transistor (TFT) can be integrated and formed by applying a normal IC process to a semiconductor thin film formed on a glass substrate. Therefore, conventionally, the IC process of a glass wafer has been performed using a semiconductor manufacturing apparatus that is substantially the same as that of a normal silicon wafer.

[0003]

The difference between a glass wafer and a normal silicon wafer is that the glass substrate is apt to be damaged, such as scratches, cracks and chippings, during handling and processing. In the conventional semiconductor manufacturing apparatus, this measure has not been sufficiently taken, and there is a problem that it causes a reduction in manufacturing yield.

The above-mentioned conventional problems will be described with reference to specific examples. A semiconductor manufacturing apparatus used for an IC process of a glass wafer includes, for example, a batch processing type high current ion implantation apparatus. This ion implanter
For example, by introducing impurities into a semiconductor thin film on a glass substrate, TF
Used to form T. The ion implantation apparatus has a rotary table in a vacuum chamber. After setting the glass wafer on the rotary table, ion implantation is performed while rotating it at a high speed. At this time, a large centrifugal force acts on the glass wafer. For this reason, stoppers are attached along the outer circumference of the rotary table. This stopper is generally made of metal such as aluminum. In addition to the centrifugal force, the glass wafer is subjected to stress such as vibration generated during the rotation due to the balance deviation of the rotary table. Further, the glass wafer is fixedly mounted on a pedestal provided on the surface of the rotary table. This pedestal is made of heat conductive rubber having a predetermined curvature, and the glass wafer is further subjected to stress such as bending stress. Receive. In addition, the impact force and the bending stress associated with the acceleration or deceleration control of the rotary table are also applied to the glass wafer. As a result, chipping or cracks are accidentally generated in the portion of the glass wafer that contacts the metal stopper. Such damage causes glass wafer cracking in the cleaning process after the ion implantation process and the heat treatment process such as diffusion.

Next, another specific example will be given. A semiconductor wafer manufacturing apparatus generally includes a glass wafer transfer mechanism.
For example, when a glass wafer is supplied to the above-mentioned batch processing type high current ion implantation apparatus, an atmospheric transfer method is used and a vacuum adsorption arm is used. This vacuum suction arm is made of metal such as aluminum,
The surface is coated with a thin coating such as Teflon. Ceramic may be used as a material instead of metal. When the glass wafer is supplied from a predetermined carrier to the rotary table of the ion implantation apparatus, fine scratches are generated at a certain rate on the surface of the glass wafer that comes into contact with the vacuum suction arm. Possible causes of such damage include a shift in the delivery position of the glass wafer by the vacuum suction arm, a trouble in the transfer sequence, and peeling of the coating on the arm surface. Since the coating is relatively thin and the material has insufficient elasticity, the hardness of the underlying arm material adversely affects the surface of the glass wafer, causing scratches. Conventionally used coatings such as Teflon are effective against contamination by heavy metals, but are insufficient to prevent scratches on glass wafers. That is, for the impact force and friction force that cause damage,
The desired elasticity and cushioning properties cannot be obtained sufficiently.

Another specific example will be described. As described above, when a semiconductor device such as a TFT is manufactured on a glass wafer made of quartz or the like, most of the manufacturing apparatuses use silicon wafer compatible devices as they are, and therefore various problems occur. The ion implanter is no exception, and the mechanical scan type ion implanter has the following problems. Some mechanical scan type ion implanters compatible with silicon wafers have a thermally conductive rubber bonded to the silicon wafer mounting portion of a rotary table. This heat conductive rubber is interposed between the silicon wafer and the rotary table to enhance the heat conductivity. Since the silicon wafer is loaded smoothly, the heat conductive rubber has a convex rounded shape. Since this convex shape is compatible with silicon wafers,
If the glass wafer is mounted as it is, inconvenience occurs. That is, due to the difference in mechanical characteristics between the silicon wafer and the glass wafer, the adhesion between the glass wafer and the heat conductive rubber deteriorates, and a gap is generated in the peripheral portion of the glass wafer. If the table is rotated and ion implantation is performed in this state, chipping or cracks occur at the contact portion between the stopper and the glass wafer. Further, in a portion where the glass wafer and the heat conductive rubber are not in close contact with each other, the cooling efficiency is lowered and the temperature of the glass wafer rises, which causes a problem in the process.

[0007]

SUMMARY OF THE INVENTION In view of the above problems of the prior art, it is an object of the present invention to prevent damage such as chipping, cracks and scratches that may occur during the processing of glass wafers. . Two measures have been taken to achieve this goal. A first means is, in a semiconductor manufacturing apparatus for processing a glass wafer having a semiconductor thin film formed on a glass substrate, a resin having predetermined elasticity and rigidity at a contact portion of a jig used for handling or holding the glass wafer. It is characterized in that a cushioning member consisting of is attached. Examples of the jig to which the cushioning member is attached include a stopper that abuts and holds a glass wafer that is placed on a rotary table and that receives a centrifugal force. The rotary table and the stopper are integrally mounted in, for example, a vacuum chamber for ion implantation. The buffer member attached to the stopper is preferably made of polyimide resin, polyphenylene oxide resin, or fluororesin. Another example of the jig having the cushioning member attached thereto is a vacuum suction arm used for transporting a glass wafer. The buffer member mounted on the vacuum suction arm is preferably made of polyetheretherketone resin or fluororesin.

A second means is a semiconductor manufacturing apparatus in which a glass wafer having a semiconductor thin film formed on a glass substrate is placed on a rotary table to perform an ion implantation process, and the glass wafer is thermally conductive with a flat surface. It is characterized in that it is supported and fixed on the rotary table in a state of being intimately attached via a rubber.

[0009]

The first means of the present invention can be applied to, for example, a batch type ion implanter equipped with a rotary table. This rotary table constitutes a mechanical rotary scanning mechanism. By attaching a shock absorbing member made of resin to a portion of the stopper provided on the rotary table that comes into contact with the glass wafer, damages such as chipping and cracks can be effectively prevented. The stopper is arranged along the outer circumference of the turntable in order to face the centrifugal force acting on the glass wafer. Also, the impact member made of resin is
For example, it is integrally formed with the stopper by a molding method. Alternatively, a separate cushioning member may be fixed to the stopper with a screw or the like.

Further, when a glass wafer is transferred to the ion implantation apparatus by the vacuum adsorption method, a cushioning member for reducing physical shock or friction is attached to a portion of the vacuum adsorption arm that comes into contact with the glass wafer. Effectively prevents scratches on glass wafers. As this buffer member, it is preferable to use a resin plate having a thickness of at least 1 mm or more.
When the buffer member is attached to the arm, it is preferable that the buffer member is adhered to prevent vacuum leak. Although the ion implantation apparatus has been described above as an example, the first means of the present invention can be applied to other semiconductor manufacturing apparatuses. For example,
It is applicable to an optical appearance inspection machine, a stepper, a CVD device, a diffusion device, a sputtering device, a cleaning device, a liquid crystal panel assembling device, and the like.

According to the second means of the present invention, in the mechanical scan type ion implantation apparatus, for example, the heat conductive rubber provided on the glass wafer mounting portion of the rotary table has a flat shape. Therefore, the gap between the peripheral part of the glass wafer and the heat conductive rubber is eliminated, and the glass wafer is held in a stable posture during high-speed rotation during ion implantation. Alternatively, cracks can be effectively prevented. Further, since the adhesion between the glass wafer and the heat conductive rubber is improved, the cooling efficiency is improved and the temperature rise of the glass wafer during ion implantation can be suppressed.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described in detail below with reference to the drawings. FIG. 1 is a schematic view showing an embodiment in which a buffer member made of resin is attached to a stopper in order to prevent chipping and cracking of a glass wafer. As shown in the drawing, a rotary table 2 is provided in a vacuum chamber 1 which constitutes a batch processing type high current ion implantation apparatus which is a kind of semiconductor manufacturing apparatus. In the figure, only a part of the cross-sectional shape of the rotary table 2 is shown. The turntable 2 is made of, for example, metallic aluminum.
A pedestal 3 is provided on the surface of the rotary table 2 and a glass wafer 4 to be ion-implanted is placed on the pedestal 3. Although not shown, the pedestal 3 is provided with a predetermined fixing means for holding and fixing the placed glass wafer 4. A stopper 5 is attached to the outer peripheral portion of the rotary table 2. This stopper 5 is the rotary table 2
It functions as a jig for abutting and holding the glass wafer 4 placed on the substrate and receiving a centrifugal force. A buffer member 6 made of a resin having a predetermined elasticity and rigidity is attached to the stopper 5 at a position where the glass wafer 4 comes into contact with the stopper 5.

FIG. 2 is an enlarged perspective view of the stopper 5 shown in FIG. The stopper 5 is made of metal such as aluminum. On the other hand, the buffer member 6 is a glass wafer (not shown)
The resin is suitable for the material that is provided at the portion that comes into contact with. However, since a large centrifugal force is applied, a material having a higher hardness is preferable in consideration of plastic deformation. Further, since the substrate temperature of the glass wafer rises to about 100 ° C. to 150 ° C. at the time of ion implantation, some heat resistance is also required. Specific examples of the resin material include Vespel. This resin is a material developed by DuPont, USA and is a polyimide type. Since it has an ether bond in its molecular structure, it is a polymer with excellent chemical resistance, weather resistance, and heat resistance. As the other resin material, polyphenylene oxide similarly made of a heat resistant polymer can be selected. A fluororesin (polytetrafluoroethylene) or the like can be used as a material similar to the above resin. Fluororesin is particularly characterized by an extremely low coefficient of friction.

FIG. 3 is a schematic diagram for explaining the function or action of the stopper. The line AA shown in the drawing represents a section line of the sectional structure shown in FIG. The glass wafer 4 is set on the pedestal on the rotary table 2. In this state, ion implantation is performed in a vacuum while rotating the turntable 2 at a high speed. At this time, a large centrifugal force is applied to the glass wafer 4. For example, turntable 2
When the distance from the center of the table to the stopper 5 is 0.5 m and the rotation speed of the table 2 is 1200 rpm, a centrifugal force of about 250 N is generated on the glass wafer 4. This centrifugal force, vibration during table rotation, bending stress due to the convex shape of the pedestal having a curvature, and impact force generated during acceleration or deceleration of the rotary table, etc., cause contact with the stopper 5. An extremely large force acts on. If a buffer member is not provided in this portion, chipping or cracks will occur at the end of the glass wafer 4. By attaching a cushioning member made of resin to the portion of the stopper 5 that comes into contact with the glass wafer 4, the elasticity of the resin produces a cushioning action against impact and bending stress generated during ion implantation, and chipping and cracking are effectively prevented. I can do things.

For reference, FIG. 4 shows an example of damage to a glass wafer which frequently occurs when the cushioning member according to the present invention is not used. (A) shows the chipping 7 generated on the end surface portion of the glass wafer 4. Further, (B) shows a crack 8 similarly generated in the peripheral portion of the glass wafer 4. If these chippings and cracks occur, the production yield will be significantly reduced.

FIG. 5 shows another embodiment of the present invention.
A buffer member is attached to an arm used in the glass wafer transfer mechanism. FIG. 5A shows the planar shape of the arm, and FIG. 5B also shows the side surface shape. The arm 11 is made of a metal such as aluminum and functions as a jig used for transporting a glass wafer. A buffer member 12 made of resin is attached to the tip of the arm 11. Further, a vacuum suction port 13 for holding a glass wafer (not shown) to be transported is also provided.

A buffer member 12 attached to the arm 11.
The following properties are required for the resin constituting the. That is,
Since glass wafers are passed from arm to arm,
Elasticity and restoring force to the extent that they function as cushioning members are required. Further, since vacuum adsorption is repeated, it is necessary that plastic deformation and change with time be extremely small, and vacuum leakage should be prevented. It is necessary to have good wear resistance and less generation of foreign matter such as dust. To prevent metal contamination, the resin must contain few impurities. When the glass wafer is mounted on the arm, it cannot be transported if the wafer is tilted, so sufficient hardness is required to support the glass wafer. For example, a 6 inch glass wafer weighs 30 g.
It is a degree. Finally, it must have good chemical resistance. Examples of the resin material satisfying the above-mentioned various conditions include polyether ether ketone. It has a relatively high hardness or rigidity and, in addition, has an ether bond in its molecular structure, and therefore is particularly excellent in chemical resistance and weather resistance. It is also possible to use a fluororesin. In the case of Teflon, it may be backed and reinforced with a metal material or the like in order to obtain a desired strength. However, when a fluororesin is used, a thin film such as a coating cannot be expected to have an effect as a cushioning material, so a thickness of at least about 1 mm is required.

FIG. 6 is a schematic view showing a step of transporting a glass wafer to a rotary table of an ion implantation apparatus by using the above-mentioned arm. The carrier 14 is prepared in a state in which the glass wafer 4 to be subjected to the ion implantation process is stacked in advance. The first arm 11a is linearly movable and takes out the glass wafers 4 one by one from the carrier 14. The second arm 11b can be driven to rotate and receives the glass wafer 4 from the first arm 11a. The third arm 11c is linearly movable, and the second arm 11b
The glass wafer 4 is received from and supplied to the turntable 2. These arms 11a, 11b and 11c are made of metallic aluminum, ceramics or the like. In the atmospheric transfer, the glass wafer is delivered by a vacuum suction method. According to this embodiment, the vacuum suction arms 11a, 11
A buffer member made of a resin plate having a sufficient thickness is attached to the portions of b and 11c that come into contact with the glass wafer.
When the glass wafer is handed over by the arm, the elasticity of the resin creates a buffering effect against the impact, and the occurrence of scratches can be prevented. It also prevents the generation of particles due to scratches.

FIG. 7 is a schematic view showing an example of a scratch that occurs when the cushioning member is not used. Grooves 9 are formed on the surface of the glass wafer 4. When the scratched portion is enlarged, it can be observed that many particles are attached.

FIG. 8 is a schematic plan view showing a concrete configuration example of a semiconductor manufacturing apparatus in which an ion implantation apparatus and a glass wafer transfer apparatus are combined. A total of 17 pedestals 3 are provided along the circumferential direction of the rotary table 2,
The glass wafer ion implantation process can be performed by a batch processing method. A pair of stoppers 5 is provided at the radially outer end of each pedestal 3, and a cushioning member made of resin is attached to each stopper 5. In order to supply the glass wafer 4 to the turntable 2, two transfer devices are used. The left and right transfer devices each include three vacuum suction arms 11a, 11b, and 11c, and take out the glass wafer 4 from the carrier 14 and supply and collect it to the pedestal 3 of the rotary table 2.

Next, another embodiment of the present invention will be described.
In this embodiment, in a semiconductor manufacturing apparatus in which a glass wafer is placed on a rotary table and ion implantation is performed, the glass wafer is supported on the rotary table in a close contact state via a heat conductive rubber having a flat surface. Characterized by being fixed. The purpose, structure, action, etc. of this embodiment will be described below in order with reference to FIGS. 9 to 14. 9A and 9B show a rotary table of a mechanical scan type ion implantation apparatus. FIG. 9A is a plan view and FIG. 9B is a sectional view. As shown in the drawing, the rotary table 21 has pedestals 22 arranged at predetermined intervals along the circumferential direction, and a wafer (not shown) to be processed is mounted on the rotary table 21. Rotating table 21 during ion implantation
Rotates at high speed around the shaft 23 (for example, 1000
rpm) and move back and forth vertically in the drawing. As a result, the wafer mounted on each pedestal 22 is mechanically scanned relative to the ion beam, and uniform ion implantation can be performed. The periphery of the rotary table 21 where the pedestals 22 are arranged is slightly inclined (the inclination angle is about 7 °) with respect to the horizontal direction, and has a structure to prevent channeling of the implanted ions.

FIG. 10 is an enlarged plan view around the pedestal 22 shown in FIG. As shown, the pedestal 22
A heat conductive rubber 24 is provided at the center of the wafer, and has a structure that contacts the back surface of the wafer to enhance cooling efficiency. A pair of stoppers 25 are planted radially outside along the peripheral edge of the heat conductive rubber 24. Further, a pair of wafer support pins 26 are planted inward in the radial direction in contact with the peripheral end of the heat conductive rubber 24. The wafer (not shown) mounted on the heat conductive rubber 24 is positioned and fixed by the stopper 25 and the support pin 26.

FIG. 11 is a sectional view showing a state where the wafer is placed on the rotary table. For convenience of description, a general structure used for ion implantation of a silicon wafer is shown. In this case, the surface of the heat conductive rubber 24 is convex and rounded so that the silicon wafer 27 can be loaded smoothly. As described above, the peripheral portion of the turntable 21 is inclined by the predetermined angle θ with respect to the horizontal plane. With this structure, when the table 21 is rotated at a high speed during ion implantation, a considerable centrifugal force T acts on the outer end portion of the wafer 27 that is in contact with the stopper 25. When this centrifugal force T is decomposed into vectors, stress corresponding to Tsin θ is generated downward at the contact portion of the wafer 27 along the contact surface of the stopper 25. As a result, the holding posture of the wafer 27 becomes unstable.

FIG. 12 is a schematic view showing a wafer holding posture. (A) represents a stationary state, and (B) represents a rotating state. In the stationary state, the wafer 27 is held substantially parallel to the rotary table 21, and the end surface of the wafer 27 is in parallel contact with the side wall of the stopper 25. Further, since the surface of the heat conductive rubber 24 has a convex rounded shape, a gap G is formed between the surface of the wafer 27 and the bottom surface of the wafer 27. On the other hand, during the high speed rotation, the downward stress Tsin θ acts on the wafer 27 as described above, so that the wafer 27 is tilted outward in the radial direction and the holding posture becomes unstable. As a result, the outer end surface of the wafer 27 does not come into surface contact with the side wall of the stopper 25 but is in a point contact state.

FIG. 13 is an enlarged view of the X portion shown in FIG. 12B. As described above, when the table is rotated at a high speed, the stress Tsin θ acts downward on the glass wafer 27, and the contact between the upper end portion of the glass wafer 27 and the side wall of the stopper 25 makes point contact. As a result, the stress concentrates on the upper end portion of the glass wafer 27 and chipping C occurs.

Therefore, in the present invention, as shown in FIG. 14, the surface shape of the heat conductive rubber 24 is made flat so that the contact between the end surface of the glass wafer 27 and the stopper 25 is kept stable during high speed rotation. There is. As a result, damage to the glass wafer 27 such as chipping can be prevented. or,
As described above, when the surface of the heat conductive rubber 24 has a convex roundness, a gap is formed between the surface of the heat conductive rubber 24 and the bottom surface of the wafer, so that the wafer cooling efficiency decreases during the ion implantation process. On the other hand, in the present invention, since the surface of the heat conductive rubber is flattened, the adhesion between the glass wafer and the heat conductive rubber can be improved, resulting in improvement of the wafer cooling efficiency during ion implantation.

Although the above-mentioned embodiment relates to the mechanical scan type ion implantation apparatus, the present invention is not limited to this. For example, the present invention can be applied to an ion implantation apparatus designed especially for a large substrate, an example of which is shown in FIG. In the ion implantation apparatus for a large substrate, the rotation speed of the table is not as high as that of the mechanical scan type, but since the wafer size becomes larger, the centrifugal force increases and the probability of chipping increases. Further, the present invention is effective because it is necessary to increase the cooling efficiency as the size of the wafer increases. As shown in the figure, the ion implantation apparatus for a large substrate includes a wafer set table 31, a load lock chamber 32, a processing chamber 33, an ion source 34 and the like. The large wafer 34 is automatically loaded and unloaded by the transport fork 35.
A rotary table 36 is incorporated in the processing chamber 33, and a wafer 38 is fixed on the rotary table 36 via a heat conductive rubber 37 having a flat surface. A cavity is provided inside the rotary table 36 so that cooling water can circulate.

[0028]

As described above, according to the first aspect of the present invention, in the portion of the stopper that comes into contact with the glass wafer,
By attaching a cushioning member made of a sufficiently thick resin plate, the elasticity of the resin plate creates a cushioning effect against impact and bending stress between the glass wafer and the stopper that are rotating at high speed in a vacuum atmosphere, and chipping of the glass wafer It is effective in preventing cracks.
The effect of improving productivity can be obtained by preventing chipping and cracks that cause a decrease in yield. Also, by attaching a buffer member made of a sufficiently thick resin plate to the part of the vacuum suction arm that contacts the glass wafer, the elasticity of the resin plate creates a buffering effect against impact when the glass wafer is transported, and the glass wafer is damaged. There is an effect that the occurrence can be effectively prevented. There is an effect that productivity is improved by preventing scratches on the glass wafers that cause a decrease in yield. Further, when a glass wafer is used for a liquid crystal panel, it is possible to prevent scratches that cause scattering of light transmission, and thus there is an effect that display quality is not impaired.

According to the second aspect of the present invention, since the shape of the heat conductive rubber fixed to the rotary table of the ion implanter is flat, there is no gap between the peripheral portion of the glass wafer and the heat conductive rubber. The glass wafer is held in a stable posture during high-speed rotation during ion implantation. Therefore, there is an effect that it is possible to effectively prevent chipping or cracks that may occur at the contact portion between the glass wafer and the stopper. Further, since the adhesion between the bottom surface of the glass wafer and the surface of the heat conductive rubber is improved, the cooling efficiency is improved, and the substrate temperature rise of the glass wafer during ion implantation can be suppressed.

[Brief description of drawings]

FIG. 1 is a schematic view showing a first embodiment of a semiconductor manufacturing apparatus according to the present invention.

FIG. 2 is an enlarged perspective view of a stopper incorporated in the first embodiment.

FIG. 3 is an operation explanatory diagram of the first embodiment.

FIG. 4 is a schematic view showing chipping and cracks generated on a glass wafer.

FIG. 5 is a schematic diagram showing a second embodiment of the present invention.

FIG. 6 is an operation explanatory diagram of the second embodiment according to the present invention.

FIG. 7 is a schematic view showing a scratch generated on a glass wafer.

FIG. 8 is a schematic plan view showing a specific configuration example of a semiconductor manufacturing apparatus according to the present invention.

FIG. 9 is a plan view and a sectional view showing a rotary table of an ion implantation apparatus according to a third embodiment of the present invention.

10 is an enlarged partial plan view showing a wafer mounting portion of the rotary table shown in FIG.

FIG. 11 is a partial cross-sectional view showing a wafer mounting portion of the same.

FIG. 12 is a schematic view showing a wafer holding posture.

13 is an enlarged view of an X portion shown in FIG. 12 (B).

FIG. 14 is an enlarged cross-sectional view of a main part of a third embodiment according to the present invention.

FIG. 15 is a schematic diagram showing an ion implantation apparatus according to a fourth embodiment of the present invention.

[Explanation of symbols]

 1 vacuum chamber 2 rotary table 3 pedestal 4 glass wafer 5 stopper 6 buffer member 7 chipping 8 crack 9 scratch 11 arm 12 buffer member 13 vacuum suction port 14 carrier 21 rotary table 22 pedestal 23 shaft 24 thermal conductive rubber 25 stopper 26 support pin 27 wafers

Claims (7)

[Claims] 1. In a semiconductor manufacturing apparatus for processing a glass wafer having a semiconductor thin film formed on a glass substrate, a resin having predetermined elasticity and rigidity is provided at a contact portion of a jig used for handling or holding the glass wafer. A semiconductor manufacturing apparatus characterized in that a shock absorbing member is attached. 2. The jig to which the cushioning member is attached is a stopper that abuts and holds a glass wafer that is placed on a rotary table and that receives a centrifugal force.
The semiconductor manufacturing apparatus described. 3. The semiconductor manufacturing apparatus according to claim 2, wherein the rotary table and the stopper are integrally mounted in a vacuum chamber for ion implantation. 4. The semiconductor manufacturing apparatus according to claim 2, wherein the buffer member mounted on the stopper is made of a polyimide resin, a polyphenylene oxide resin, or a fluororesin. 5. The semiconductor manufacturing apparatus according to claim 1, wherein the jig to which the cushioning member is attached is a vacuum suction arm used for transporting a glass wafer. 6. The semiconductor manufacturing apparatus according to claim 5, wherein the buffer member mounted on the vacuum suction arm is made of polyetheretherketone resin or fluororesin. 7. A semiconductor manufacturing apparatus for performing ion implantation treatment by placing a glass wafer having a semiconductor thin film formed on a glass substrate on a rotary table, wherein the glass wafer is made of a heat conductive rubber having a flat surface. A semiconductor manufacturing apparatus characterized in that the semiconductor manufacturing apparatus is supported and fixed on the rotary table in a state of being closely contacted with the rotary table.