JPH06177429A - Blue LED element - Google Patents
Blue LED elementInfo
- Publication number
- JPH06177429A JPH06177429A JP35194892A JP35194892A JPH06177429A JP H06177429 A JPH06177429 A JP H06177429A JP 35194892 A JP35194892 A JP 35194892A JP 35194892 A JP35194892 A JP 35194892A JP H06177429 A JPH06177429 A JP H06177429A
- Authority
- JP
- Japan
- Prior art keywords
- compound semiconductor
- semiconductor layer
- led chip
- blue led
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H10W72/884—
-
- H10W90/736—
-
- H10W90/756—
Landscapes
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
(57)【要約】
【目的】 冷却のため、透光性基板を発光面側にし、一
方、ｐ−ｎ接合窒化ガリウム系の化合物半導体層側をリ
ードフレーム側とした青色ＬＥＤ素子において、ＬＥＤ
チップをより小型化できる青色ＬＥＤ素子を提供する。
【構成】 透光性基板と、この透光性基板上に積層され
たｐ−ｎ接合窒化ガリウム系の化合物半導体層とからな
るＬＥＤチップを具備してなる青色ＬＥＤ素子におい
て、ＬＥＤチップが、該化合物半導体層に重畳された絶
縁スペーサを介して一方のリードフレーム上に形成され
ており、また、化合物半導体層に対向した絶縁スペーサ
上には、化合物半導体層のｐ型及びｎ型の窒化ガリウム
層に夫々接続された金属電極層が形成され、これら金属
電極層とリードフレームとが電気的に接続されているこ
とを特徴とする。
(57) [Summary] [Objective] In a blue LED device in which a light-transmissive substrate is on the light emitting surface side for cooling, while the pn junction gallium nitride-based compound semiconductor layer side is the lead frame side,
Provided is a blue LED device that can further reduce the size of a chip. A blue LED element comprising an LED chip comprising a transparent substrate and a pn junction gallium nitride-based compound semiconductor layer laminated on the transparent substrate, wherein the LED chip is The p-type and n-type gallium nitride layers of the compound semiconductor layer are formed on one of the lead frames through an insulating spacer that overlaps with the compound semiconductor layer, and on the insulating spacer that faces the compound semiconductor layer. Is formed, and the metal electrode layers are electrically connected to the lead frame.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ｐ−ｎ接合窒化ガリウ
ム系の化合物半導体層を用いた青色ＬＥＤ素子に係り、
特に、青色ＬＥＤチップの小型化を図った青色ＬＥＤ素
子の改良に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a blue LED device using a pn junction gallium nitride compound semiconductor layer.
In particular, the present invention relates to an improvement of a blue LED element that aims to downsize the blue LED chip.
【０００２】[0002]
【従来の技術】青色ＬＥＤ（発光ダイオード）、青色Ｌ
Ｄ（レーザーダイオード）等の青色発光デバイスの材料
としてＧａＮ、ＩｎＧａＮ、ＧａＡｌＮ等の窒化ガリウ
ム系化合物半導体が注目されている。2. Description of the Related Art Blue LED (light emitting diode), blue L
As a material for blue light emitting devices such as D (laser diode), gallium nitride-based compound semiconductors such as GaN, InGaN, and GaAlN are drawing attention.
【０００３】窒化ガリウム系化合物半導体の中、例え
ば、ＧａＮを用いた従来の青色ＬＥＤ素子の構造を説明
すると、透光性基板としてサファイア基板を用い、この
サフャイア基板上に、ｎ型ＧａＮ層、ｎ型ＩｎＧａＮ層
及びｐ型ＧａＮ層を順次積層した化合物半導体層からな
るＬＥＤチップを形成し、次いで、ｎ型ＧａＮ層上及び
ｐ型ＧａＮ層上に夫々電極を形成し、これら電極は、好
適な導電性接着剤を介して、離間した一対のリードフレ
ームに電気的に接続されると共に、化合物半導体層から
なるＬＥＤチップを一対のリードフレームに支持してい
る。即ち、ＬＥＤチップの冷却のため、ＬＥＤチップ
は、サフャイヤ基板を発光面側にしてｐ−ｎ接合窒化ガ
リウム系の化合物半導体層側を両リードフレームに支持
された構造となっている。そして、リードフレーム上に
は、ＬＥＤチップを包囲し且つＬＥＤチップからの光を
集光するようにレンズ状のモールドが形成されている。To explain the structure of a conventional blue LED element using, for example, GaN among gallium nitride-based compound semiconductors, a sapphire substrate is used as a translucent substrate, and an n-type GaN layer, n -Type InGaN layer and p-type GaN layer are sequentially laminated to form an LED chip, and then electrodes are formed on the n-type GaN layer and the p-type GaN layer, respectively, and these electrodes have suitable conductivity. Is electrically connected to a pair of spaced lead frames via a conductive adhesive, and the pair of lead frames supports an LED chip made of a compound semiconductor layer. That is, in order to cool the LED chip, the LED chip has a structure in which the pn junction gallium nitride-based compound semiconductor layer side is supported by both lead frames with the sapphire substrate as the light emitting surface side. Then, a lens-shaped mold is formed on the lead frame so as to surround the LED chip and collect light from the LED chip.
【０００４】しかしながら、このような構造の青色ＬＥ
Ｄ素子では、ＬＥＤチップの大きさを、離間したリード
フレームの間隔以上にしなければならず、現状では、機
械強度及び加工技術等の問題により、リードフレーム間
の間隔が０．３ｍｍ必要であり、少なくとも０．６ｍｍ
前後の長さのＬＥＤチップの大きさとならざるを得ず、
より小型化の青色ＬＥＤ素子を得る場合に大きな障壁と
なっていた。また、従来、ＬＥＤチップの側面から出る
光をサファイア基板側に集光するために、ＬＥＤチップ
の側面にカップ状のフレームを取付けることが知られて
いるが、上述した構造の青色ＬＥＤ素子では、ＬＥＤチ
ップが一対のリードフレームの両方に支持されているた
め、一方のリードフレームにＬＥＤチップを支持させる
構造であるカップ状リードフレームも応用できず、ＬＥ
Ｄチップの側面から出る光を有効的に利用できないとい
う不都合があった。However, the blue LE having such a structure
In the D element, the size of the LED chip must be equal to or larger than the distance between the separated lead frames, and at present, the distance between the lead frames is 0.3 mm due to problems such as mechanical strength and processing technology. At least 0.6 mm
Inevitably the size of the front and rear LED chips,
This has been a big obstacle in obtaining a more compact blue LED element. Further, conventionally, it is known that a cup-shaped frame is attached to the side surface of the LED chip in order to collect the light emitted from the side surface of the LED chip on the sapphire substrate side. Since the LED chip is supported by both of the pair of lead frames, it is not possible to apply the cup-shaped lead frame having a structure in which the LED chip is supported by one of the lead frames.
There is a disadvantage that the light emitted from the side surface of the D chip cannot be effectively used.
【０００５】[0005]
【発明が解決しようとする課題】本発明の目的は、冷却
のため、透光性基板を発光面側にし、一方、ｐ−ｎ接合
窒化ガリウム系の化合物半導体層側をリードフレーム側
とした青色ＬＥＤ素子において、ＬＥＤチップをより小
型化できる青色ＬＥＤ素子を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to make a transparent substrate a light emitting surface side for cooling, and a pn junction gallium nitride-based compound semiconductor layer side a lead frame side for a blue color. An LED element is to provide a blue LED element capable of further miniaturizing an LED chip.
【０００６】[0006]
【課題を解決するための手段】上述の目的は、透光性基
板と、この透光性基板上に積層されたｐ−ｎ接合窒化ガ
リウム系の化合物半導体層とからなるＬＥＤチップを具
備してなる青色ＬＥＤ素子において、ＬＥＤチップが、
該化合物半導体層に重畳された絶縁スペーサを介して一
方のリードフレーム上に形成されており、また、化合物
半導体層に対向した絶縁スペーサ上には、化合物半導体
層のｐ型及びｎ型の窒化ガリウム層に夫々接続された金
属電極層が形成され、これら金属電極層とリードフレー
ムとが電気的に接続されていることを特徴とする青色Ｌ
ＥＤ素子により、解決される。The above-mentioned object is provided with an LED chip comprising a transparent substrate and a pn junction gallium nitride-based compound semiconductor layer laminated on the transparent substrate. In the blue LED element, the LED chip is
The p-type and n-type gallium nitride of the compound semiconductor layer is formed on one of the lead frames through an insulating spacer that overlaps with the compound semiconductor layer, and on the insulating spacer that faces the compound semiconductor layer. Blue L, characterized in that metal electrode layers respectively connected to the layers are formed and these metal electrode layers and the lead frame are electrically connected.
It is solved by the ED element.
【０００７】好適には、上記青色ＬＥＤ素子において、
一方のリードフレームが、前記ＬＥＤチップの側面を包
囲したカップ部を有している。Preferably, in the above blue LED element,
One of the lead frames has a cup portion that surrounds the side surface of the LED chip.
【０００８】[0008]
【作用】ＬＥＤチップが両電極部材及び絶縁スペーサを
介して一方のリードフレーム上に形成されることによ
り、従来、離間した一対のリードフレームの双方に支持
されていたときの如く、ＬＥＤチップの大きさがリード
フレームの離間間隔による制約を受けないので、より小
さいＬＥＤチップを用いることができ、全体として青色
ＬＥＤ素子を小型化することができる。また、製造にお
いては、大幅に収率を向上さすことができる。The LED chip is formed on one of the lead frames through both the electrode members and the insulating spacer, so that the size of the LED chip is the same as when conventionally supported by both of the pair of lead frames which are separated from each other. However, a smaller LED chip can be used, and the blue LED element can be downsized as a whole. Further, in the production, the yield can be greatly improved.
【０００９】また、ＬＥＤチップが両電極部材及び絶縁
スペーサを介して一方のリードフレーム上に形成される
ので、ＬＥＤチップの側面を全周に亙って包囲するカッ
プ部を有した一方のリードフレームを使用することがで
きる。リードフレームのカップ部により、ＬＥＤチップ
の側面から出る光を有効的に透光性基板側の発光面に発
光させることができ、青色ＬＥＤ素子の外部量子効率の
向上を図ることができる。Further, since the LED chip is formed on one of the lead frames through both electrode members and the insulating spacer, the one lead frame having the cup portion which surrounds the side surface of the LED chip over the entire circumference. Can be used. By the cup portion of the lead frame, the light emitted from the side surface of the LED chip can be effectively emitted to the light emitting surface on the transparent substrate side, and the external quantum efficiency of the blue LED element can be improved.
【００１０】[0010]
【実施例】以下、図面を参照しながら、本発明の一実施
例について説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
【００１１】図１には、本発明の一実施例に係る青色Ｌ
ＥＤ素子が示されている。この青色ＬＥＤ素子はＬＥＤ
チップ２を含んでいる。このＬＥＤチップ２は、透光性
基板としてのサフャイヤ基板４と、ｐ−ｎ接合窒化ガリ
ウム系の化合物半導体層とを有しており、化合物半導体
層は、サフャイヤ基板４上に順次積層されたｎ型ＧａＮ
層６、ｎ型ＩｎＧａＮ層８及びｐ型ＧａＮ層１０とから
なっている。図１から明らかなように、ｐ型ＧａＮ層１
０にはニッケル電極１２が積層され、一方、ｎ型ＧａＮ
層６には、好適なエッチングによりｎ型ＩｎＧａＮ層８
及びｐ型ＧａＮ層１０を取り除かれた位置でアルミニウ
ム電極１４が積層されている。これらニッケル電極１２
及びアルミニウム電極１４は、蒸着等の好適な手段によ
りｐ型ＧａＮ層１０及びｎ型ＧａＮ層６にそれぞれ容易
に形成される。FIG. 1 shows a blue L according to an embodiment of the present invention.
The ED element is shown. This blue LED element is an LED
Includes chip 2. This LED chip 2 has a sapphire substrate 4 as a translucent substrate and a pn junction gallium nitride-based compound semiconductor layer, and the compound semiconductor layers are sequentially laminated on the sapphire substrate 4. Type GaN
It comprises a layer 6, an n-type InGaN layer 8 and a p-type GaN layer 10. As is clear from FIG. 1, the p-type GaN layer 1
0 is laminated with a nickel electrode 12, while n-type GaN is used.
The layer 6 is an n-type InGaN layer 8 by suitable etching.
The aluminum electrode 14 is laminated at a position where the p-type GaN layer 10 is removed. These nickel electrodes 12
The aluminum electrode 14 and the aluminum electrode 14 are easily formed on the p-type GaN layer 10 and the n-type GaN layer 6, respectively, by a suitable means such as vapor deposition.
【００１２】ニッケル電極１２とアルミニウム電極１４
とは、導電性の良い材料であって、例えば、銀ペース
ト、インジウム、半田等からなる導電性接着剤層１６、
１８を介して金属電極層２０、２２に夫々固着されてお
り、これら金属電極層２０、２２は、例えば、金を蒸着
する等によって絶縁スペーサ２４上に形成されている。
絶縁スペーサ２４の大きさは、後述する電極構造のた
め、ＬＥＤチップ２より大きい。絶縁スペーサ２４は、
熱電導性の良い材料であって、例えば、銀ペースト、イ
ンジウム、半田等からなる接着剤層２６を介してリード
フレーム２８上に固着されている。リードフレーム２８
は、ＬＥＤチップ２の側面を全周に亙って包囲するよう
にカップ部３０を有している。即ち、ＬＥＤチップ２は
接着剤層２６、絶縁スペーサ２４、金属電極層２０、２
２及び導電性接着剤１６、１８を介してリードフレーム
２８のカップ部３０の底部に取付けられている。Nickel electrode 12 and aluminum electrode 14
Is a material having good conductivity, for example, a conductive adhesive layer 16 made of silver paste, indium, solder, or the like,
They are fixed to the metal electrode layers 20 and 22 via 18, respectively, and these metal electrode layers 20 and 22 are formed on the insulating spacer 24 by, for example, vapor deposition of gold.
The size of the insulating spacer 24 is larger than that of the LED chip 2 because of the electrode structure described later. The insulating spacer 24 is
It is a material having good thermal conductivity and is fixed on the lead frame 28 via an adhesive layer 26 made of, for example, silver paste, indium, solder or the like. Lead frame 28
Has a cup portion 30 so as to surround the side surface of the LED chip 2 over the entire circumference. That is, the LED chip 2 includes the adhesive layer 26, the insulating spacer 24, the metal electrode layers 20, 2
2 and the conductive adhesives 16 and 18 are attached to the bottom portion of the cup portion 30 of the lead frame 28.
【００１３】青色ＬＥＤ素子は、カップ部３０を有した
リードフレーム２８と離間して併設されたリードフレー
ム３２を有しており、ＬＥＤチップ２の化合物半導体層
に対向した絶縁スペーサ２４上に形成された各金属電極
層１６、１８は、好適なボンデング手段により形成され
た導線３４、３６を通じてリードフレーム２８、３２に
電気的に接続されている。The blue LED element has a lead frame 28 having a cup portion 30 and a lead frame 32 provided separately from the lead frame 28, and is formed on an insulating spacer 24 facing the compound semiconductor layer of the LED chip 2. Each of the metal electrode layers 16 and 18 is electrically connected to the lead frames 28 and 32 through the conductive wires 34 and 36 formed by suitable bonding means.
【００１４】そして、青色ＬＥＤ素子には、リードフレ
ーム２８のカップ部３０の底部に接着剤層２６、絶縁ス
ペーサ２４及び金属電極層２０、２２を介して取り付け
られたＬＥＤチップ２を中心にして、両リードフレーム
２８、３２を覆うモールド３８が設けられており、この
モールド３８は、ＬＥＤチップ２からの光を集光するよ
うにレンズ状に形成されている。In the blue LED element, the LED chip 2 attached to the bottom of the cup portion 30 of the lead frame 28 via the adhesive layer 26, the insulating spacer 24, and the metal electrode layers 20 and 22 is used as a center. A mold 38 that covers both the lead frames 28 and 32 is provided, and this mold 38 is formed in a lens shape so as to collect light from the LED chip 2.
【００１５】このように形成された青色ＬＥＤ素子で
は、リードフレーム２８、３２を介して順電圧５Ｖで、
発光波長４３０ｎｍ、約３００μＷを示した。一方のリ
ードフレームだけでＬＥＤチップを支持することなく、
一対のリードフレームにＬＥＤチップを支持させた従来
の青色ＬＥＤ素子の発光出力が２００μＷであるのに比
べて、本実施例の青色ＬＥＤ素子は、リードフレーム２
８のカップ部３０によるＬＥＤチップ２の側面への散乱
を透光性基板４側の発光方向に寄与さすことができ、
１．５倍ほど明るくなった。In the blue LED element thus formed, a forward voltage of 5V is applied via the lead frames 28 and 32.
The emission wavelength was 430 nm and the emission was about 300 μW. Without supporting the LED chip with only one lead frame,
Compared with the emission output of the conventional blue LED element in which an LED chip is supported by a pair of lead frames is 200 μW, the blue LED element of the present embodiment has a lead frame 2
The scattering of the side surface of the LED chip 2 by the cup portion 30 of 8 can contribute to the light emitting direction on the transparent substrate 4 side.
It became 1.5 times brighter.
【００１６】しかも、この実施例では、一対のリードフ
レームにＬＥＤチップを支持させた従来のものに比べ
て、ＬＥＤチップ２の大きさを約３割も小さくすること
ができる。このことは、ＬＥＤチップ２を切り出すウエ
ハを約６割程度有効に利用できることであり、即ち、一
定のウエハから個数を６割多くしてＬＥＤチップが取れ
ることを意味する。Moreover, in this embodiment, the size of the LED chip 2 can be reduced by about 30% as compared with the conventional one in which the LED chips are supported by the pair of lead frames. This means that about 60% of the wafers from which the LED chips 2 are cut can be effectively used, that is, the LED chips can be obtained by increasing the number of wafers from a certain wafer by 60%.
【００１７】[0017]
【発明の効果】上述したように、本発明によれば、金属
電極層を有した絶縁スペーサをＬＥＤチップとリードフ
レームとの間に設けることにより、ＬＥＤチップを１つ
のリードフレームに取り付けることができ、これによ
り、ＬＥＤチップの小型化、青色ＬＥＤ素子全体の小型
化が図れ、しかも、ＬＥＤチップをリードフレームのカ
ップ部に取り付けることができ、これにより、外部量子
効率を向上さすことができる。As described above, according to the present invention, the LED chip can be attached to one lead frame by providing the insulating spacer having the metal electrode layer between the LED chip and the lead frame. As a result, the LED chip can be downsized, and the blue LED element as a whole can be downsized, and the LED chip can be attached to the cup portion of the lead frame, whereby the external quantum efficiency can be improved.
【図１】本発明の一実施例による青色ＬＥＤ素子を示す
断面図である。FIG. 1 is a sectional view showing a blue LED device according to an embodiment of the present invention.
２ ＬＥＤチップ ４ 透光性基板（サファイヤ基板） ６ ｎ型ＧａＮ層 ８ ｎ型ＩｎＧａＮ層 １０ ｐ型ＧａＮ層 ２０、２２ 金属電極層 ２４ 絶縁スペーサ ２８、３２ リードフレーム ３０ カップ部 2 LED chip 4 Light transmissive substrate (sapphire substrate) 6 n-type GaN layer 8 n-type InGaN layer 10 p-type GaN layer 20, 22 metal electrode layer 24 insulating spacers 28, 32 lead frame 30 cup part
Claims (2)
されたｐ−ｎ接合窒化ガリウム系の化合物半導体層とか
らなるＬＥＤチップを具備してなる青色ＬＥＤ素子にお
いて、 前記ＬＥＤチップが、該化合物半導体層に重畳された絶
縁スペーサを介して一方のリードフレーム上に形成され
ており、また、前記化合物半導体層に対向した絶縁スペ
ーサ上には、化合物半導体層のｐ型及びｎ型の窒化ガリ
ウム層に夫々接続された金属電極層が形成され、これら
金属電極層とリードフレームとが電気的に接続されてい
ることを特徴とする青色ＬＥＤ素子。1. A blue LED element comprising an LED chip comprising a transparent substrate and a pn junction gallium nitride-based compound semiconductor layer laminated on the transparent substrate, wherein the LED chip Is formed on one of the lead frames via an insulating spacer that is superposed on the compound semiconductor layer, and the p-type and n-type of the compound semiconductor layer are formed on the insulating spacer facing the compound semiconductor layer. A blue LED element characterized in that metal electrode layers respectively connected to the gallium nitride layer are formed, and these metal electrode layers and the lead frame are electrically connected.
Ｄチップの側面を包囲したカップ部を有してなることを
特徴とする青色ＬＥＤ素子。2. The lead frame of the one side is the LE
A blue LED element having a cup portion surrounding a side surface of a D chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35194892A JPH06177429A (en) | 1992-12-08 | 1992-12-08 | Blue LED element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35194892A JPH06177429A (en) | 1992-12-08 | 1992-12-08 | Blue LED element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06177429A true JPH06177429A (en) | 1994-06-24 |
Family
ID=18420727
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35194892A Pending JPH06177429A (en) | 1992-12-08 | 1992-12-08 | Blue LED element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06177429A (en) |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0954036A (en) * | 1995-08-17 | 1997-02-25 | Kobe Steel Ltd | Cr concentration meter |
| JP2002289923A (en) * | 2001-03-28 | 2002-10-04 | Toyoda Gosei Co Ltd | Light emitting diode and method of manufacturing the same |
| EP1258929A2 (en) | 2001-05-15 | 2002-11-20 | LumiLeds Lighting U.S., LLC | Semiconductor LED flip-chip having low refractive index underfill |
| US6696704B1 (en) | 1999-01-11 | 2004-02-24 | Matsushita Electric Industrial Co., Ltd. | Composite light-emitting device, semiconductor light-emitting unit and method for fabricating the unit |
| US6744124B1 (en) * | 1999-12-10 | 2004-06-01 | Siliconix Incorporated | Semiconductor die package including cup-shaped leadframe |
| US6853010B2 (en) | 2002-09-19 | 2005-02-08 | Cree, Inc. | Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor |
| US7029935B2 (en) | 2003-09-09 | 2006-04-18 | Cree, Inc. | Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same |
| JP2007043180A (en) * | 2005-08-04 | 2007-02-15 | Samsung Electronics Co Ltd | LED package and manufacturing method thereof |
| US7183587B2 (en) | 2003-09-09 | 2007-02-27 | Cree, Inc. | Solid metal block mounting substrates for semiconductor light emitting devices |
| EP0921577A4 (en) * | 1997-01-31 | 2007-10-31 | Matsushita Electric Industrial Co Ltd | ELECTROLUMINESCENT ELEMENT, SEMICONDUCTOR ELECTROLUMINESCENT DEVICE, AND PROCESS FOR PRODUCING THE SAME |
| US7304694B2 (en) | 2005-01-12 | 2007-12-04 | Cree, Inc. | Solid colloidal dispersions for backlighting of liquid crystal displays |
| US7322732B2 (en) | 2004-12-23 | 2008-01-29 | Cree, Inc. | Light emitting diode arrays for direct backlighting of liquid crystal displays |
| US7589396B2 (en) | 1999-09-13 | 2009-09-15 | Vishay-Siliconix | Chip scale surface mount package for semiconductor device and process of fabricating the same |
| US7595547B1 (en) | 2005-06-13 | 2009-09-29 | Vishay-Siliconix | Semiconductor die package including cup-shaped leadframe |
| US7614759B2 (en) | 2005-12-22 | 2009-11-10 | Cree Led Lighting Solutions, Inc. | Lighting device |
| US7728411B2 (en) * | 2006-02-15 | 2010-06-01 | Sandisk Corporation | COL-TSOP with nonconductive material for reducing package capacitance |
| US9220149B2 (en) | 2006-01-20 | 2015-12-22 | Cree, Inc. | Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources |
| US9608166B2 (en) | 2003-08-14 | 2017-03-28 | Cree, Inc. | Localized annealing of metal-silicon carbide ohmic contacts and devices so formed |
| US9841175B2 (en) | 2012-05-04 | 2017-12-12 | GE Lighting Solutions, LLC | Optics system for solid state lighting apparatus |
| US9951938B2 (en) | 2009-10-02 | 2018-04-24 | GE Lighting Solutions, LLC | LED lamp |
-
1992
- 1992-12-08 JP JP35194892A patent/JPH06177429A/en active Pending
Cited By (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0954036A (en) * | 1995-08-17 | 1997-02-25 | Kobe Steel Ltd | Cr concentration meter |
| EP0921577A4 (en) * | 1997-01-31 | 2007-10-31 | Matsushita Electric Industrial Co Ltd | ELECTROLUMINESCENT ELEMENT, SEMICONDUCTOR ELECTROLUMINESCENT DEVICE, AND PROCESS FOR PRODUCING THE SAME |
| US6696704B1 (en) | 1999-01-11 | 2004-02-24 | Matsushita Electric Industrial Co., Ltd. | Composite light-emitting device, semiconductor light-emitting unit and method for fabricating the unit |
| US7589396B2 (en) | 1999-09-13 | 2009-09-15 | Vishay-Siliconix | Chip scale surface mount package for semiconductor device and process of fabricating the same |
| US6909170B2 (en) * | 1999-12-10 | 2005-06-21 | Siliconix Incorporated | Semiconductor assembly with package using cup-shaped lead-frame |
| US6744124B1 (en) * | 1999-12-10 | 2004-06-01 | Siliconix Incorporated | Semiconductor die package including cup-shaped leadframe |
| US9040356B2 (en) | 1999-12-10 | 2015-05-26 | Vishay-Siliconix | Semiconductor including cup-shaped leadframe packaging techniques |
| JP2002289923A (en) * | 2001-03-28 | 2002-10-04 | Toyoda Gosei Co Ltd | Light emitting diode and method of manufacturing the same |
| EP1258929A2 (en) | 2001-05-15 | 2002-11-20 | LumiLeds Lighting U.S., LLC | Semiconductor LED flip-chip having low refractive index underfill |
| EP1258929A3 (en) * | 2001-05-15 | 2008-09-10 | LumiLeds Lighting U.S., LLC | Semiconductor LED flip-chip having low refractive index underfill |
| US6853010B2 (en) | 2002-09-19 | 2005-02-08 | Cree, Inc. | Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor |
| US9608166B2 (en) | 2003-08-14 | 2017-03-28 | Cree, Inc. | Localized annealing of metal-silicon carbide ohmic contacts and devices so formed |
| US7029935B2 (en) | 2003-09-09 | 2006-04-18 | Cree, Inc. | Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same |
| US7183587B2 (en) | 2003-09-09 | 2007-02-27 | Cree, Inc. | Solid metal block mounting substrates for semiconductor light emitting devices |
| US7322732B2 (en) | 2004-12-23 | 2008-01-29 | Cree, Inc. | Light emitting diode arrays for direct backlighting of liquid crystal displays |
| USRE42598E1 (en) | 2004-12-23 | 2011-08-09 | Cree, Inc. | Light emitting diode arrays for direct backlighting of liquid crystal displays |
| USRE45796E1 (en) | 2004-12-23 | 2015-11-10 | Cree, Inc. | Light emitting diode arrays for direct backlighting of liquid crystal displays |
| US7304694B2 (en) | 2005-01-12 | 2007-12-04 | Cree, Inc. | Solid colloidal dispersions for backlighting of liquid crystal displays |
| US7595547B1 (en) | 2005-06-13 | 2009-09-29 | Vishay-Siliconix | Semiconductor die package including cup-shaped leadframe |
| JP2007043180A (en) * | 2005-08-04 | 2007-02-15 | Samsung Electronics Co Ltd | LED package and manufacturing method thereof |
| US7614759B2 (en) | 2005-12-22 | 2009-11-10 | Cree Led Lighting Solutions, Inc. | Lighting device |
| US8858004B2 (en) | 2005-12-22 | 2014-10-14 | Cree, Inc. | Lighting device |
| US9220149B2 (en) | 2006-01-20 | 2015-12-22 | Cree, Inc. | Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources |
| US7728411B2 (en) * | 2006-02-15 | 2010-06-01 | Sandisk Corporation | COL-TSOP with nonconductive material for reducing package capacitance |
| US9951938B2 (en) | 2009-10-02 | 2018-04-24 | GE Lighting Solutions, LLC | LED lamp |
| US9841175B2 (en) | 2012-05-04 | 2017-12-12 | GE Lighting Solutions, LLC | Optics system for solid state lighting apparatus |
| US10139095B2 (en) | 2012-05-04 | 2018-11-27 | GE Lighting Solutions, LLC | Reflector and lamp comprised thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH06177429A (en) | Blue LED element | |
| US9142742B2 (en) | Thin-film LED with P and N contacts electrically isolated from the substrate | |
| US8536612B2 (en) | Light emitting device having a pluralilty of light emitting cells and package mounting the same | |
| JPH11317546A (en) | Semiconductor light emitting device | |
| JP3960636B2 (en) | Light emitting element | |
| WO2023071910A1 (en) | Micro-led chip structure and manufacturing method therefor | |
| JPH09321341A (en) | Optical semiconductor device and manufacturing method thereof | |
| JPH09223846A (en) | Nitride semiconductor laser device | |
| JP3238326B2 (en) | Light emitting device | |
| JP2019201198A (en) | Light-emitting chip and related packaging structure | |
| TWI453952B (en) | Light emitting element and manufacturing method thereof | |
| JPH11298035A (en) | Semiconductor light emitting device | |
| JPH10335699A (en) | Compound semiconductor light emitting device and method of manufacturing the same | |
| US20210111310A1 (en) | Light emitting chip and associated package structure | |
| US9362718B2 (en) | Semiconductor light emitting device | |
| CN111613696A (en) | A MICRO LED structure and its manufacturing method | |
| US20210328117A1 (en) | Light-emitting device | |
| JP2718339B2 (en) | Light emitting diode chip and light emitting diode | |
| JP6265306B1 (en) | Light emitting device | |
| KR101448588B1 (en) | Light emitting diode and manufacturing method thereof | |
| JP2543202Y2 (en) | Light emitting device | |
| JP2003218388A (en) | Semiconductor light emitting device and method of manufacturing the same |