JP2002289923A - Light-emitting diode and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting diode(LED) that is constituted to make the light-emitting element exhibit its characteristics fully by forming a flip-chip structure, without using Zener diodes. SOLUTION: In the LED 1, one of the electrodes provided on the backside of the light-emitting element 2 is connected to the top of a through-hole 5 which is filled with solder 6 through the gold bump 7a and the other electrode is connected to a conductor pattern 4 insulated from the through-hole 5 through the other gold bump 7b. Since the flip-chip structure is formed by connecting the electrodes on the backside of the element 2 directly on the through-hole 5 and pattern 4 via the gold bumps 7a and 7b without going via a Zener diode as in the conventional example, the through-hole 5 and solder 6 filling up the hole 5 work as a heat sink and the heat radiating property of the LED 1 is very much improved. Consequently, the light-emitting element 2 will not become high in temperature, and therefore, the luminous efficiency of the element 2 is maintained at a high level and the service life of the element 2 is prolonged also.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a so-called flip-chip type light emitting diode (hereinafter abbreviated as "LED") in which a light emitting element is electrically connected to a lead by an electrode on a back surface. In this specification, LE
The D chip itself is called a “light emitting element”, and the entire light emitting device including an optical device such as a package resin or a lens system on which an LED chip is mounted is referred to as a “light emitting diode” or “LE”.
D ".

[0002]

2. Description of the Related Art Conventionally, when mounting a light-emitting device having both an anode and a cathode on one side, such as a GaN-based light-emitting device, the electrode (transparent electrode) side is turned down via a zener diode. The light emitting diode was constituted by a so-called flip chip structure for mounting (WO
98-34285).

An example of such a conventional light emitting diode will be described with reference to FIG. FIG. 6 is a cross-sectional view showing a configuration of a mounting portion of a light emitting element of a conventional light emitting diode. As shown in FIG. 6, in the light emitting diode 51, the power supply 1 for supplying power to the GaN-based light
A reflecting mirror 53c is formed by one of the pair of leads 53a and 53b, and a Zener diode 54 is mounted on the bottom surface of the reflecting mirror 53c by silver paste. On the upper surface of the Zener diode 54,
Two types of electrodes 54a and 54b are formed. Two types of electrodes on the lower surface of the light emitting element 52 are connected to the electrodes 54a and 54b by gold bumps 55a and 55b, and the light emitting element 52 is mounted. ing. A wire 56 is bonded to one electrode 54b on the top surface of the Zener diode 54 and is electrically connected to the other lead 53b. In this manner, the light emitting element 5 is formed on the Zener diode 54 by the flip chip structure.
2 is mounted, and is powered by a pair of leads 53a and 53b to emit light.

[0004]

However, in such a light emitting diode 51, since the light emitting element 52 is mounted on one of the leads 53a via the zener diode 54, heat radiation is poor. There has been a problem that the luminous efficiency is reduced due to a high temperature, and the life of the device is shortened. Further, even if the reflecting mirror 53c is formed around the light emitting element 52 as shown in FIG. 6, the reflecting mirror 53c is separated from the light emitting element 52 due to the Zener diode 54, so that sufficient optical characteristics can be obtained. could not.

Accordingly, an object of the present invention is to provide a light emitting diode in which the characteristics of a light emitting element are sufficiently exhibited by forming a flip chip structure without using a Zener diode, and a method of manufacturing the same. is there.

[0006]

According to a first aspect of the present invention, there is provided a light emitting diode including a flip-chip type light emitting element, wherein a through hole of a through hole substrate is filled with a metal, and One of the electrodes on the back side of the light emitting element is connected to the other, and the other of the electrodes on the back side of the light emitting element is connected to a conductive pattern insulated from the through hole of the through hole substrate. .

In the LED having such a configuration, since the conductive pattern of the through-hole substrate can be made fine and precise, two electrodes on the back side of the light-emitting element having a very small interval are provided, one on the through-hole and the other on the other. Can be connected on a conductive pattern that is insulated from the through-hole while ensuring insulation. Since the through holes are filled with metal, the through holes function as heat sinks, and since the through holes are excellent in heat dissipation, the luminous efficiency is kept high and the element life is prolonged.

[0008] By forming a flip-chip structure without using a Zener diode in this manner, an LED having sufficient light emitting element characteristics can be obtained.

According to a second aspect of the present invention, there is provided a light emitting diode including a flip-chip type light emitting element, the light emitting diode being fixed to an upper surface of one of a pair of leads for supplying power to the light emitting element. Insulating film, comprising two conductive foils formed apart from each other on the insulating film, electrodes on the back side of the light emitting element are connected to the two conductive foils, respectively, One of the two conductive foils is electrically connected to the one lead, and the other of the two conductive foils is electrically connected to the other lead of the pair of leads. Is what it is.

In the LED having such a configuration, since the insulating film is fixed on one of the leads, the electrode on the back side of the light emitting element is insulated from the one of the leads. Then, 2 formed apart from each other on the insulating film.
The electrodes on the back side of the light emitting element are respectively connected to the one conductive foil, and the two conductive foils are electrically connected to one lead and the other lead, respectively.
Thereby, the electrode on the back side of the light emitting element is electrically connected to one lead and the other lead, respectively. Thus, a flip chip structure is formed. And since the light emitting element is mounted on one of the leads via an extremely thin insulating film and conductive foil, the light emitting element becomes extremely excellent in heat dissipation, the luminous efficiency is kept high, and the element life is prolonged. .

By forming a flip-chip structure without using a Zener diode in this manner, an LED having sufficient light emitting element characteristics can be obtained.

According to a third aspect of the present invention, there is provided a light emitting diode including a flip-chip type light emitting element, wherein the light emitting diode is fixed to an upper surface of one of a pair of leads for supplying power to the light emitting element. Insulating film, comprising a conductive foil formed on the insulating film, one of the electrodes on the back side of the light emitting element is connected to the conductive foil, the back side of the light emitting element The other of the electrodes is connected to the one lead, and the conductive foil is electrically connected to the other lead of the pair of leads.

In the LED having such a configuration, one of the electrodes on the back side of the light emitting element is connected to a conductive foil insulated from one lead by an insulating film, and the conductive foil is connected to the other lead by a wire. And so on. On the other hand, the other of the electrodes on the back side of the light emitting element is directly connected to one lead by a gold bump or the like. Thereby, the electrode on the back side of the light emitting element is electrically connected to one lead and the other lead, respectively.
Thus, a flip chip structure is formed. Some of the light-emitting elements are placed on one of the leads directly via an extremely thin insulating film and conductive foil, and the other part is extremely excellent in heat dissipation. And the life of the device is prolonged.

By forming a flip-chip structure without using a Zener diode in this manner, an LED having sufficient light emitting element characteristics can be obtained.

A light emitting diode according to a fourth aspect of the present invention is the light emitting diode according to the third aspect, wherein the one lead forms a concave reflecting mirror, and the light emitting element is located on the bottom surface of the reflecting mirror. is there.

The light emitted in the horizontal direction from the light-emitting surface of the light-emitting element is also reflected by the concave-shaped reflecting mirror in the direction substantially perpendicular to the light-emitting surface, so that the external radiation efficiency of the LED is improved. . Then, one of the electrodes on the back side of the light emitting element is insulated from one of the leads by an insulating film, and is connected to a conductive foil extending to the edge of the reflecting mirror composed of the one lead. Are electrically connected to the leads by wires or the like. On the other hand, the other of the electrodes on the back side of the light emitting element is directly connected to one lead by a gold bump or the like. by this,
An electrode on the back side of the light emitting element is electrically connected to one lead and the other lead, respectively. Thus, a flip chip structure is formed. Therefore, since the light emitting element is directly mounted on the bottom surface of the reflecting mirror without passing through the Zener diode, the light emitting element can sufficiently fulfill the role of the reflecting mirror, and sufficient optical characteristics can be obtained.

Further, since a part of the light emitting element is mounted on one lead directly via an extremely thin insulating film and conductive foil, the other part is extremely excellent in heat dissipation. Also, the luminous efficiency is kept high, and the life of the device is prolonged.

In this manner, by forming a flip chip structure and forming a reflecting mirror without using a Zener diode, an LED having sufficient luminous efficiency, element life, and optical characteristics of a light emitting element can be obtained.

According to a fifth aspect of the present invention, in the light emitting diode according to any one of the first to fourth aspects, a part of the through hole substrate or a part of the pair of leads and the light emitting element are connected to each other. Is sealed with a light transmitting material, and the light emitting surface side of the light emitting element of the light transmitting material is a light emitting surface.

By sealing the light emitting element with the light transmissive material in this manner, the amount of light emitted from the light emitting element is about twice that in the case where the light emitting element is not sealed, so that the external radiation efficiency is significantly improved. Since the light emitting element is mounted in a flip-chip structure without using a Zener diode, the light emitting element has extremely excellent heat dissipation, the luminous efficiency is kept high, and the element life is prolonged.

As described above, by forming a flip chip structure without using a Zener diode and encapsulating with a light transmissive material, an LED having more excellent light emitting efficiency, device life and external radiation efficiency can be obtained. .

According to a sixth aspect of the present invention, in the light emitting diode according to the fifth aspect, the light emitting surface is a convex lens.

By sealing the light emitting element with the light transmitting material and providing the light emitting surface of the convex lens on the light emitting surface side, the light emitted from the light emitting element is condensed and emitted outside. It has excellent optical characteristics. Also, by sealing the light emitting element with a light transmitting material,
Since the amount of light radiated from the light emitting element is about twice that of the case where the light emitting element is not sealed, the external radiation efficiency is significantly improved. Since the light emitting element is mounted in a flip-chip structure without using a Zener diode, the light emitting element has extremely excellent heat dissipation, the luminous efficiency is kept high, and the element life is prolonged.

In this way, by forming a flip chip structure without using a Zener diode and providing a light emitting surface of a convex lens by sealing with a light transmitting material, the luminous efficiency of the light emitting element, element life, external The resulting LED has excellent radiation efficiency and light collection characteristics.

According to a seventh aspect of the present invention, in the method of manufacturing a light emitting diode, an insulating film in which a conductive foil is attached to a part of one of a pair of leads for supplying power to a light emitting element. A step of attaching, and pressing one of the leads to form a concave reflector in which one end of the conductive foil of the insulating film is located at the center,
A step of processing the concave surface of the reflector so as to be round without being angular, and a step of connecting one of the electrodes on the back side of the light emitting element to an end of the conductive foil at the center of the concave reflector. Connecting the other of the electrodes on the back side of the light emitting element to the one lead; and electrically connecting the other end of the conductive foil to the other of the pair of leads. It is provided with.

In this method of manufacturing a light-emitting diode, after attaching an insulating film having a conductive foil attached to one of the leads, one of the leads is pressed to form a concave reflecting mirror. One end of the film and the foil is positioned at the center of the reflecting mirror, and the concave surface of the reflecting mirror is processed so as to be round and not angular. Thus, the light emitting element can be mounted at the central portion of the reflector, and the concave surface of the reflector is rounded, so that the conductive foil can be reliably prevented from being broken during press working. . Subsequently, at the center of the reflector, one of the electrodes on the back side of the light emitting element is electrically connected to one end of the conductive foil by a gold bump or the like, and the other of the electrodes on the back side of the light emitting element is connected to one of the electrodes. Connect directly to the leads by gold bumps or the like. Then, the other end of the conductive foil is electrically connected to the other lead by a wire or the like, whereby a flip chip structure is formed.

According to this method of manufacturing a light emitting diode,
The light-emitting element can be mounted in a flip-chip structure without using a Zener diode, and a conductive foil for electrically connecting one of the electrodes on the back side of the light-emitting element to the other lead is used to form a reflector. It can be reliably prevented from occasionally being cut. By mounting the light-emitting element in the center of the concave reflecting mirror, light emitted in the horizontal direction from the light-emitting surface of the light-emitting element is also reflected substantially in the vertical direction with respect to the light-emitting surface and irradiated. As a result, the external radiation efficiency is improved.

In this manner, by forming a flip chip structure without using a Zener diode and forming a rounded concave reflecting mirror, the heat dissipation of the light emitting element is improved, and the light emitting efficiency and the element life are reduced. Excellent,
In addition, a method of manufacturing an LED that can obtain sufficient optical characteristics and has high reliability of electrical connection.

According to an eighth aspect of the present invention, in the method for manufacturing a light emitting diode according to the seventh aspect, a part of the pair of leads, the reflecting mirror, and the light emitting element are sealed with a light transmitting material. In addition, a step of setting a light emitting surface side of the light emitting element of the light transmitting material as a light emitting surface is added.

By sealing the light emitting element with the light transmissive material in this manner, the amount of light emitted from the light emitting element is about twice that in the case where the light emitting element is not sealed, so that the external radiation efficiency is significantly improved. And since the light emitting element is mounted in the center of the reflector by a flip chip structure without using a Zener diode, it has extremely excellent heat dissipation, the luminous efficiency is kept high, and the element life is extended, External radiation efficiency is also improved.

As described above, by forming a flip chip structure without using a Zener diode and sealing with a light transmitting material to form a light emitting surface, the light emitting efficiency of the light emitting element, the element life, the external radiation It becomes a method of manufacturing an LED with better efficiency.

According to a ninth aspect of the present invention, in the light emitting diode according to the eighth aspect, the light emitting surface is a convex lens.

Since the light emitting element is sealed with the light transmitting material and the light emitting surface of the convex lens is provided on the light emitting surface side, the light emitted from the light emitting element is condensed and emitted outside. It has excellent optical characteristics. Also, by sealing the light emitting element with a light transmitting material,
Since the amount of light radiated from the light emitting element is about twice that of the case where the light emitting element is not sealed, the external radiation efficiency is significantly improved. And since the light emitting element is mounted at the center of the reflector by a flip chip structure without using a Zener diode, it has extremely excellent heat dissipation,
The luminous efficiency is kept high, the lifetime of the element is prolonged, and the external radiation efficiency is also improved.

In this manner, by forming a flip chip structure without using a Zener diode and providing a light emitting surface of a convex lens by sealing with a light transmitting material, the luminous efficiency of the light emitting element, element life, external This is a method of manufacturing an LED having excellent radiation efficiency and light-collecting characteristics.

[0035]

Embodiments of the present invention will be described below with reference to the drawings.

First Embodiment First, a first embodiment of the present invention will be described with reference to FIG. FIG. 1A is a longitudinal sectional view showing the entire structure of the light emitting diode according to the first embodiment of the present invention, and FIG. 1B is a plan view.

As shown in FIG. 1A, in the LED 1 of the first embodiment, a through hole 5 is formed in a glass epoxy substrate, and copper is formed on the upper and lower surfaces of the substrate and the inner surface of the through hole 5. A GaN-based light emitting element 2 is placed on a through-hole substrate 3 on which a conductive pattern 4 made of foil is printed.
Is mounted. The inside of the through hole 5 is filled with solder 6 as a metal. One of the electrodes on the back side of the light emitting element 2 is provided with a gold bump 7 on the through hole 5.
are electrically connected by a. On the other hand, the light emitting element 2
Is electrically connected to the conductive pattern 4 on the side insulated from the through hole 5 by a gold bump 7b.

When viewed from above, insulation between the gold bump 7a on the through hole 5 and the gold bump 7b on the conductive pattern 4 is ensured by the gap 4a between the conductive patterns 4. Thus, a flip chip structure is formed.

As described above, in the LED 1 according to the first embodiment, the electrodes on the back side of the light emitting element 2 are directly connected to the through holes 5 and the conductive patterns by the gold bumps 7a and 7b without using a Zener diode as in the related art. 4 to form a flip-chip structure, the through-hole 5 and the solder 6 filled therein serve as a heat sink, resulting in an LED with extremely excellent heat dissipation.
As a result, the light emitting element 2 is kept at a high temperature, the luminous efficiency is not reduced, and the high luminous efficiency is maintained, and the life of the element is extended.

The conductive patterns 4 insulated from each other
Is mounted on the through-hole substrate 3 on which the LED 1 is printed on the back side of the substrate, so that the LED 1 can be surface-mounted as it is.

As described above, the LED of the first embodiment
1, a light emitting element 2 is formed by forming a flip chip structure without using a Zener diode.
The characteristics of are fully exhibited.

Second Embodiment Next, a second embodiment of the present invention will be described with reference to FIG. FIG. 2A is a longitudinal sectional view showing the entire structure of the light emitting diode according to the second embodiment of the present invention, and FIG. 2B is a plan view. The same parts as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted.

As shown in FIG. 2, the LED 11 according to the second embodiment is different from the LED 1 according to the first embodiment in that the light emitting element 2 and a part of the through hole substrate 3 are made of a transparent epoxy as a light transmitting material. The light-emitting surface side is sealed with a resin 8 to form a convex lens 9 as a light-emitting surface.

By sealing the light emitting element 2 with the transparent epoxy resin 8 in this manner, the amount of light radiated from the light emitting element 2 is about twice that in the case where the light emitting element 2 is not sealed.
D11 significantly improves external radiation efficiency. Further, by providing the light emitting surface of the convex lens 9 on the light emitting surface side of the light emitting element 2, light emitted from the light emitting element 2 is condensed and emitted to the outside, so that the optical characteristics are excellent. Furthermore,
Similar to the LED 1 of the first embodiment, surface mounting can be performed as it is.

As described above, the LED of the second embodiment
In No. 11, a light emitting surface of the convex lens 9 is provided by forming a flip chip structure without using a Zener diode and encapsulating with a transparent epoxy resin 8, thereby providing luminous efficiency, element life, and external radiation of the light emitting element 2. It becomes an LED excellent in efficiency and light collection characteristics.

Third Embodiment Next, a third embodiment of the present invention will be described with reference to FIG. FIG. 3 is a longitudinal sectional view showing the entire structure of the light emitting diode according to the third embodiment of the present invention.

As shown in FIG. 3, the LED 21 according to the third embodiment has one of a pair of leads 23 a and 23 b for supplying power to the GaN-based light emitting element 22.
An insulating film 24 on which copper foils 25a and 25b separated from each other as two conductive foils are formed is affixed on a. The thickness of the insulating film 24 is about 100 μ
m, and the thickness of the copper foils 25a, 25b is about 20 μm. The two electrodes on the back side of the light emitting element 22 are respectively provided with gold bumps 26 on the two copper foils 25a and 25b thus insulated.
a, 26b. And copper foil 25
The surface of a is electrically connected to one lead 23a by bonding with a wire 27a, and the surface of the copper foil 25b is electrically connected to the other lead 23b by bonding with a wire 27b. Thus, the light emitting element 22 is mounted on one lead 23a by the flip chip structure.

The light emitting element 22 and the pair of leads 23 are formed by the transparent epoxy resin 28 as a light transmitting material.
a, 23b, insulating film 24, copper foil 25a,
25b, gold bumps 26a, 26b, wires 27a, 27
b is sealed, and a convex lens 29 as a light emitting surface is formed on the light emitting surface side of the light emitting element 22, that is, on the upper side.

By sealing the light emitting element 22 with the transparent epoxy resin 28 in this manner, the amount of light radiated from the light emitting element 22 is about twice that in the case where the light emitting element 22 is not sealed. Significantly improved. Further, by providing the light emitting surface of the convex lens 29 on the light emitting surface side of the light emitting element 22, light emitted from the light emitting element 22 is condensed and externally emitted, so that the optical characteristics are excellent.

As described above, the LED of the third embodiment
In 21, a light emitting surface of a convex lens 29 is provided by forming a flip chip structure without using a Zener diode and sealing with a transparent epoxy resin 28, so that the light emitting efficiency of the light emitting element 22, element life, and external radiation It becomes an LED excellent in efficiency and light collection characteristics.

Fourth Embodiment Next, a fourth embodiment of the present invention will be described with reference to FIG. FIG. 4A is a longitudinal sectional view showing the entire structure of a light emitting diode according to a fourth embodiment of the present invention, and FIG. 4B is a partially enlarged plan view showing the periphery of a mounting portion of the light emitting element in an enlarged manner.

As shown in FIG. 4A, the LED 31 according to the fourth embodiment is provided at the tip of one of the leads 33a and 33b for supplying power to the GaN-based light emitting element 32. An insulating film 34 on which a pattern of a copper foil 35 as a conductive foil is formed is attached. The thickness of the insulating film 34 is about 100 μm,
The thickness of 5 is about 20 μm. The light emitting element 32 is connected to the copper foil 35 by the gold bump 36b so that only one of the electrodes on the back side of the light emitting element 32 is placed on the copper foil 35. The other of the electrodes on the back side of the light emitting element 32 is directly connected on one lead 33a by a gold bump 36a. Then, the surface of the copper foil 35 is electrically connected to the other lead 33 b by bonding with the wire 37.
Thus, the light emitting element 32 is mounted on one lead 33a by the flip chip structure.

As shown in FIG. 4B, when the mount portion is viewed from above, the two electrodes on the back side of the light emitting element 32 are formed by a gap 34 a formed by an insulating film 34.
This ensures insulation. The LED 31 according to the fourth embodiment does not use two copper foils as the LED 21 according to the third embodiment, and the other of the electrodes on the back side of the light emitting element 32 is over the one lead 33a by the gold bump 36a. Is connected directly to one of the leads 33 without heat passing through the insulating film.
escaped to a. Furthermore, the structure is simpler and easier to manufacture. Thus, the cost of the LED 31 can be reduced.

The light emitting element 32 and a pair of leads 33 are formed by a transparent epoxy resin 38 as a light transmitting material.
A part of a, 33b, insulating film 34, copper foil 35, gold bumps 36a, 36b, and wire 37 are sealed, and a convex lens 39 as a light emitting surface is formed on the light emitting surface side of light emitting element 32, that is, on the upper side. You.

By sealing the light emitting element 32 with the transparent epoxy resin 38 in this manner, the amount of light radiated from the light emitting element 32 is about twice that in the case where the light emitting element 32 is not sealed. Significantly improved. Further, by providing the light emitting surface of the convex lens 39 on the light emitting surface side of the light emitting element 32, light emitted from the light emitting element 32 is condensed and radiated outside, so that the optical characteristics are excellent.

As described above, the LED of the fourth embodiment
In 31, a light emitting surface of a convex lens 39 is provided by forming a flip chip structure without using a Zener diode and sealing with a transparent epoxy resin 38, so that the light emitting efficiency of the light emitting element 32, element life, and external radiation It becomes an LED excellent in efficiency and light collection characteristics.

Fifth Embodiment Next, a fifth embodiment of the present invention will be described with reference to FIG. FIG. 5A is a longitudinal sectional view showing an overall structure of a light emitting diode and a method for manufacturing the same according to a fifth embodiment of the present invention, and FIG. FIG.

As shown in FIG. 5A, the LED 41 according to the fifth embodiment is provided at the tip of one of the leads 43a and 43b for supplying power to the GaN-based light emitting element. A long insulating film 44 is attached, and a copper foil 45 as a conductive foil is attached thereon. The thickness of the insulating film 44 is about 100 μm, and the thickness of the copper foil 45 is about 20 μm.

Here, one of the leads 43a is pressed to form a concave reflecting mirror 43c.
And one end of the copper foil 45 is positioned at the center of the reflecting mirror 43c, and the concave surface of the reflecting mirror 43c is processed so as not to be angular but rounded. Thereby, the light emitting element 42 can be mounted on the central portion of the reflecting mirror 43c, and the concave surface of the reflecting mirror 43c is rounded to reliably prevent the copper foil 45 from being cut off during press working. Can be. Subsequently, in the center of the reflecting mirror 43c, one of the electrodes on the back side of the light emitting element 42 is connected to one end of the copper foil 45 by a gold bump 46b, and the other of the electrodes on the back side of the light emitting element 42 is connected to one of the leads. 4
3a is directly connected by a gold bump 46a. And
Connect the other end of the copper foil 45 to the other lead 43b with a wire 47
And electrically connecting them to form a flip chip structure.

The light emitting element 42 and a pair of leads 43 are formed by a transparent epoxy resin 48 as a light transmitting material.
a, 43b, reflector 43c, insulating film 4
4. The copper foil 45, the gold bumps 46a and 46b, and the wire 47 are sealed, and a convex lens 49 as a light emitting surface is formed on the light emitting surface side of the light emitting element 42, that is, on the upper side.

By sealing the light emitting element 42 with the transparent epoxy resin 48 in this manner, the amount of light radiated from the light emitting element 42 is about twice that in the case where the light emitting element 42 is not sealed. Significantly improved. Further, by providing the light emitting surface of the convex lens 49 on the light emitting surface side of the light emitting element 42, the light emitted from the light emitting element 42 is collected and emitted to the outside, so that the optical characteristics are excellent. Further, by mounting the light emitting element 42 at the center of the concave reflecting mirror 43c, light emitted in the horizontal direction from the light emitting surface of the light emitting element 42 is also reflected in the direction substantially perpendicular to the light emitting surface and irradiated. Therefore, the external radiation efficiency is further improved.

As described above, the LED of the fifth embodiment
In 41, a light emitting surface of a convex lens 49 is provided by forming a flip chip structure without using a Zener diode and sealing with a transparent epoxy resin 48 to thereby provide light emitting efficiency, element life, and external radiation of the light emitting element 42. It becomes an LED excellent in efficiency and light collection characteristics. Further, by forming the concave reflecting mirror 43c, the external radiation efficiency is further improved.

In Embodiments 2 to 5, the case where the light emitting element and a part of the pair of leads are sealed with a transparent epoxy resin as a light transmitting material has been described. As described above, it is not always necessary to perform resin sealing. Also, the case where the light emitting surface formed of the transparent epoxy resin is a convex lens has been described. However, the light emitting surface can have various other shapes including a flat surface.

Further, in each of the above embodiments, an example in which a transparent epoxy resin is used as a light-transmitting material as a sealing material has been described. Any light-transmitting material may be used as long as it satisfies conditions such as filling properties, transparency after curing, and strength.

The configuration, shape, quantity, material, size, connection relationship, and the like of other parts of the light emitting diode, and other steps of the method of manufacturing the light emitting diode are not limited to the above embodiments. .

[0066]

As described above, the light-emitting diode according to the first aspect of the present invention is a light-emitting diode having a flip-chip type light-emitting element, wherein the through-hole of the through-hole substrate is filled with metal, and One of the electrodes on the back side of the light emitting element is connected to the through hole, and the other of the electrodes on the back side of the light emitting element is connected to a conductive pattern insulated from the through hole of the through hole substrate. It is.

In the LED having such a configuration, since the conductive pattern of the through-hole substrate can be made fine and precise, the two electrodes on the back side of the light emitting element having a very small space are provided, one on the through hole and the other on the other side. Can be connected on a conductive pattern that is insulated from the through-hole while ensuring insulation. Since the through holes are filled with metal, the through holes function as heat sinks, and since the through holes are excellent in heat dissipation, the luminous efficiency is kept high and the element life is prolonged.

By forming a flip-chip structure without using a Zener diode in this manner, an LED having sufficient light emitting element characteristics can be obtained.

A light emitting diode according to a second aspect of the present invention is a light emitting diode having a flip-chip type light emitting element, and is fixed to the upper surface of one of a pair of leads for supplying power to the light emitting element. Insulating film, comprising two conductive foils formed apart from each other on the insulating film, electrodes on the back side of the light emitting element are connected to the two conductive foils, respectively, One of the two conductive foils is electrically connected to the one lead, and the other of the two conductive foils is electrically connected to the other lead of the pair of leads. Is what it is.

In the LED having such a configuration, since the insulating film is fixed on one lead, the electrode on the back side of the light emitting element is insulated from the one lead. Then, 2 formed apart from each other on the insulating film.
The electrodes on the back side of the light emitting element are respectively connected to the one conductive foil, and the two conductive foils are electrically connected to one lead and the other lead, respectively.
Thereby, the electrode on the back side of the light emitting element is electrically connected to one lead and the other lead, respectively. Thus, a flip chip structure is formed. And since the light emitting element is mounted on one of the leads via an extremely thin insulating film and conductive foil, the light emitting element becomes extremely excellent in heat dissipation, the luminous efficiency is kept high, and the element life is prolonged. .

By forming a flip-chip structure without using a Zener diode in this manner, an LED having sufficient light emitting element characteristics can be obtained.

A light-emitting diode according to a third aspect of the present invention is a light-emitting diode having a flip-chip type light-emitting element, and is fixed to the upper surface of one of a pair of leads for supplying power to the light-emitting element. Insulating film, comprising a conductive foil formed on the insulating film, one of the electrodes on the back side of the light emitting element is connected to the conductive foil, the back side of the light emitting element The other of the electrodes is connected to the one lead, and the conductive foil is electrically connected to the other lead of the pair of leads.

In the LED having such a configuration, one of the electrodes on the back side of the light emitting element is connected to a conductive foil insulated from one lead by an insulating film, and the conductive foil is connected to the other lead by a wire. And so on. On the other hand, the other of the electrodes on the back side of the light emitting element is directly connected to one lead by a gold bump or the like. Thereby, the electrode on the back side of the light emitting element is electrically connected to one lead and the other lead, respectively.
Thus, a flip chip structure is formed. Some of the light-emitting elements are placed on one of the leads directly via an extremely thin insulating film and conductive foil, and the other part is extremely excellent in heat dissipation. And the life of the device is prolonged.

By forming a flip-chip structure without using a Zener diode in this manner, an LED having sufficient light emitting element characteristics can be obtained.

According to a fourth aspect of the present invention, in the light emitting diode according to the third aspect of the present invention, the one lead forms a concave reflecting mirror, and the light emitting element is located on the bottom surface of the reflecting mirror. is there.

In addition to the effect described in claim 3, the light emitted in the horizontal direction from the light emitting surface of the light emitting element is reflected by the concave reflecting mirror in a direction substantially perpendicular to the light emitting surface and irradiated. Therefore, the external radiation efficiency of the LED is improved. Then, one of the electrodes on the back side of the light emitting element is insulated from one of the leads by an insulating film, and is connected to a conductive foil extending to the edge of the reflecting mirror composed of the one lead. Are electrically connected to the leads by wires or the like. On the other hand, the other of the electrodes on the back side of the light emitting element is directly connected to one lead by a gold bump or the like. Thereby, the electrode on the back side of the light emitting element is electrically connected to one lead and the other lead, respectively. Thus, a flip chip structure is formed. Therefore, since the light emitting element is directly mounted on the bottom surface of the reflecting mirror without passing through the Zener diode, the light emitting element can sufficiently fulfill the role of the reflecting mirror, and sufficient optical characteristics can be obtained.

Further, since a part of the light emitting element is mounted on one lead directly via an extremely thin insulating film and conductive foil, the other part is extremely excellent in heat dissipation. Also, the luminous efficiency is kept high, and the life of the device is prolonged.

As described above, by forming the flip-chip structure and forming the reflecting mirror without using the Zener diode, an LED having sufficient luminous efficiency, element life, and optical characteristics of the light emitting element can be obtained.

According to a fifth aspect of the present invention, in the light emitting diode according to any one of the first to fourth aspects, a part of the through-hole substrate or a part of the pair of leads and the light emitting element are connected to each other. Is sealed with a light transmitting material, and the light emitting surface side of the light emitting element of the light transmitting material is a light emitting surface.

By sealing the light emitting element with the light transmissive material as described above, any one of claims 1 to 4 can be provided.
In addition to the effects described above, the amount of light emitted from the light emitting element is about twice that in the case where the light emitting element is not sealed, so that the external radiation efficiency is significantly improved. Since the light emitting element is mounted in a flip-chip structure without using a Zener diode, the light emitting element has extremely excellent heat dissipation, the luminous efficiency is kept high, and the element life is prolonged.

As described above, by forming a flip chip structure without using a Zener diode and sealing with a light transmissive material, an LED having more excellent light emitting efficiency, element life, and external radiation efficiency can be obtained. .

According to a sixth aspect of the present invention, in the light emitting diode according to the fifth aspect, the light emitting surface is a convex lens.

By sealing the light emitting element with the light transmitting material and providing the light emitting surface of the convex lens on the light emitting surface side, the light emitted from the light emitting element can be obtained in addition to the effect of the fifth aspect. Are condensed and emitted to the outside, so that the optical characteristics are excellent. In addition, since the light emitting element is sealed with a light transmitting material, the amount of light emitted from the light emitting element is about twice as large as the case where the light emitting element is not sealed, so that the external radiation efficiency is significantly improved. Since the light emitting element is mounted in a flip-chip structure without using a Zener diode, the light emitting element has extremely excellent heat dissipation, the luminous efficiency is kept high, and the element life is prolonged.

As described above, by forming a flip chip structure without using a Zener diode and sealing with a light transmitting material to provide a light emitting surface of a convex lens, the luminous efficiency of the light emitting element, element life, external The resulting LED has excellent radiation efficiency and light collection characteristics.

According to a seventh aspect of the present invention, in the method of manufacturing a light emitting diode, an insulating film in which a conductive foil is attached to a part of one of a pair of leads for supplying power to a light emitting element. A step of attaching, and pressing one of the leads to form a concave reflector in which one end of the conductive foil of the insulating film is located at the center,
A step of processing the concave surface of the reflector so as to be round without being angular, and a step of connecting one of the electrodes on the back side of the light emitting element to an end of the conductive foil at the center of the concave reflector. Connecting the other of the electrodes on the back side of the light emitting element to the one lead; and electrically connecting the other end of the conductive foil to the other of the pair of leads. It is provided with.

In this method of manufacturing a light emitting diode, an insulating film having a conductive foil is applied on one of the leads, and then one of the leads is pressed to form a concave reflecting mirror. One end of the film and the foil is positioned at the center of the reflecting mirror, and the concave surface of the reflecting mirror is processed so as to be round and not angular. Thus, the light emitting element can be mounted at the central portion of the reflector, and the concave surface of the reflector is rounded, so that the conductive foil can be reliably prevented from being broken during press working. . Then, in the center of the reflector, one of the electrodes on the back side of the light emitting element is connected to one end of the conductive foil by a gold bump or the like, and the other of the electrodes on the back side of the light emitting element is connected to one lead by gold. Connect directly by bumps or the like. Then, the other end of the conductive foil is electrically connected to the other lead by a wire or the like, whereby a flip chip structure is formed.

According to this method of manufacturing a light emitting diode,
The light-emitting element can be mounted in a flip-chip structure without using a Zener diode, and a conductive foil for electrically connecting one of the electrodes on the back side of the light-emitting element to the other lead is used to form a reflector. It can be reliably prevented from occasionally being cut. By mounting the light-emitting element in the center of the concave reflecting mirror, light emitted in the horizontal direction from the light-emitting surface of the light-emitting element is also reflected substantially in the vertical direction with respect to the light-emitting surface and irradiated. As a result, the external radiation efficiency is improved.

As described above, by forming the flip-chip structure without using the Zener diode and forming the rounded concave reflecting mirror, the heat radiation of the light emitting element is improved, and the light emitting efficiency and the life of the element are reduced. Excellent,
In addition, a method of manufacturing an LED that can obtain sufficient optical characteristics and has high reliability of electrical connection.

According to an eighth aspect of the present invention, in the method for manufacturing a light emitting diode according to the seventh aspect, a part of the pair of leads, the reflecting mirror and the light emitting element are sealed with a light transmitting material. In addition, a step of setting a light emitting surface side of the light emitting element of the light transmitting material as a light emitting surface is added.

By sealing the light emitting element with the light transmitting material in this way, in addition to the effect of claim 7, the amount of light radiated from the light emitting element is about twice that in the case where the light emitting element is not sealed. Therefore, the external radiation efficiency is significantly improved. And since the light emitting element is mounted in the center of the reflector by a flip chip structure without using a Zener diode, it has extremely excellent heat dissipation, the luminous efficiency is kept high, and the element life is prolonged, External radiation efficiency is also improved.

In this way, by forming a flip chip structure without using a Zener diode and sealing with a light transmitting material to form a light emitting surface, the luminous efficiency of the light emitting element, the element life, the external radiation It becomes a method of manufacturing an LED with better efficiency.

The light emitting diode according to a ninth aspect of the present invention is the light emitting diode according to the eighth aspect, wherein the light emitting surface is a convex lens.

By sealing the light emitting element with a light transmissive material and providing the light emitting surface of the convex lens on the light emitting surface side, the light emitted from the light emitting element can be obtained in addition to the effect of the eighth aspect. Are condensed and emitted outside, so that the optical characteristics are excellent. In addition, since the light emitting element is sealed with a light transmitting material, the amount of light emitted from the light emitting element is about twice as large as the case where the light emitting element is not sealed, so that the external radiation efficiency is significantly improved. And since the light emitting element is mounted in the center of the reflector by a flip chip structure without using a Zener diode, it has extremely excellent heat dissipation, and the luminous efficiency is kept high,
The life of the element is prolonged, and the external radiation efficiency is also improved.

In this way, by forming a flip chip structure without using a Zener diode and providing a light emitting surface of a convex lens by sealing with a light transmitting material, the luminous efficiency of the light emitting element, element life, external This is a method of manufacturing an LED having excellent radiation efficiency and light-collecting characteristics.

[Brief description of the drawings]

FIG. 1A is a longitudinal sectional view showing the entire structure of a light emitting diode according to a first embodiment of the present invention, and FIG. 1B is a plan view.

FIG. 2A is a longitudinal sectional view showing the entire structure of a light emitting diode according to a second embodiment of the present invention, and FIG. 2B is a plan view.

FIG. 3 is a longitudinal sectional view showing the entire structure of a light emitting diode according to a third embodiment of the present invention.

FIG. 4A is a longitudinal sectional view showing the entire structure of a light emitting diode according to a fourth embodiment of the present invention, and FIG. 4B is a partially enlarged plan view showing the periphery of a mounting portion of the light emitting element. It is.

FIG. 5A is a longitudinal sectional view showing an overall structure of a light emitting diode according to a fifth embodiment of the present invention and a method for manufacturing the same, and FIG. 5B is an enlarged view of the periphery of a light emitting element mounting part. It is a partial enlarged plan view shown.

FIG. 6 is a cross-sectional view showing a configuration of a mounting portion of a light emitting element of a conventional light emitting diode.

[Explanation of symbols]

 1,11,21,31,41 Light emitting diode 2,22,32,42 Light emitting element 3 Through hole substrate 4 Conductive pattern 5 Through hole 6 Metal 8,28,38,48 Light transmitting material 9,29,39, 49 Light emitting surface (convex lens) 23a, 33a, 43a One lead 23b, 33b, 43b The other lead 24, 34, 44 Insulating film 25a, 25b, 35, 45 Conductive foil 43c Reflecting mirror

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Kunihiro Jimme, Inventor Kunihiro Kasuga-cho, Nishi-Kasugai-gun, Aichi Prefecture, 1 Ochiai, Nagahata Toyoda Gosei Co., Ltd. F-term (reference) 5F041 AA31 DA01 DA07 DA09 DA20 DA44 DA61 DB01

Claims (9)

[Claims] 1. A light emitting diode having a flip chip type light emitting element, wherein a through hole of a through hole substrate is filled with a metal,
One of the electrodes on the back side of the light emitting element is connected to the through hole, and the other of the electrodes on the back side of the light emitting element is connected to a conductive pattern insulated from the through hole of the through hole substrate. A light-emitting diode, characterized in that: 2. A light emitting diode including a flip-chip type light emitting element, comprising: an insulating film fixed to an upper surface of one of a pair of leads for supplying power to the light emitting element; And two conductive foils formed apart from each other on a film, wherein electrodes on the back side of the light emitting element are connected to the two conductive foils, respectively. A light emitting diode, wherein one is electrically connected to the one lead, and the other of the two conductive foils is electrically connected to the other lead of the pair of leads. 3. A light emitting diode including a flip-chip type light emitting element, comprising: an insulating film fixed to an upper surface of one of a pair of leads for supplying power to the light emitting element; A conductive foil formed on a film, one of the electrodes on the back side of the light emitting element is connected to the conductive foil, and the other of the electrodes on the back side of the light emitting element is connected to the one lead. The light emitting diode is connected, wherein the conductive foil is electrically connected to the other lead of the pair of leads. 4. The light emitting diode according to claim 3, wherein said one lead forms a concave reflecting mirror, and said light emitting element is located on a bottom surface of said reflecting mirror. 5. A light-emitting element in which a part of the through-hole substrate or a part of the pair of leads and the light-emitting element are sealed with a light-transmitting material, and a light-emitting surface of the light-transmitting material on the light-emitting element side The light emitting diode according to any one of claims 1 to 4, wherein is a light emitting surface. 6. The light emitting diode according to claim 5, wherein the light emitting surface is a convex lens. 7. A step of attaching an insulating film having a conductive foil attached to a part of one of a pair of leads for supplying power to the light emitting element, and pressing the one lead. One end of the conductive foil of the insulating film is processed into a concave reflecting mirror in which one end is located at a central part, and the concave surface of the reflecting mirror is processed so as to be round and not angular, A step of connecting one of the electrodes on the back side of the light emitting element to the end of the conductive foil at the center of the concave reflecting mirror; and a step of connecting the other of the electrodes on the back side of the light emitting element to the one lead. And a step of electrically connecting the other end of the conductive foil to the other of the pair of leads. 8. A part of the pair of leads, the reflecting mirror and the light emitting element are sealed with a light transmitting material, and a light emitting surface of the light emitting element of the light transmitting material is a light emitting surface. The method for manufacturing a light emitting diode according to claim 7, further comprising the step of: 9. The method according to claim 8, wherein the light emitting surface is a convex lens.