JPH06102826B2 - Thin film manufacturing equipment - Google Patents
Thin film manufacturing equipmentInfo
- Publication number
- JPH06102826B2 JPH06102826B2 JP60251308A JP25130885A JPH06102826B2 JP H06102826 B2 JPH06102826 B2 JP H06102826B2 JP 60251308 A JP60251308 A JP 60251308A JP 25130885 A JP25130885 A JP 25130885A JP H06102826 B2 JPH06102826 B2 JP H06102826B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- film manufacturing
- manufacturing apparatus
- shutter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Description
【発明の詳細な説明】 産業上の利用分野 本発明は半導体分野等に用いられる薄膜製造装置に関す
るものである。TECHNICAL FIELD The present invention relates to a thin film manufacturing apparatus used in the field of semiconductors and the like.
従来の技術 従来、薄膜を作製する方法としては真空蒸着法、スパッ
タ法等が用いられているが、いずれの方式においても生
成した膜の結晶性や残留応力等、材料物性あるいは基板
との密着強度を高めるなど生成膜の改質を目的として、
基板に薄膜を生成する際、基板を加熱する手法が一般に
用いられている。Conventional technology Conventionally, vacuum deposition method, sputtering method, etc. have been used as a method for forming a thin film, but in any method, the physical properties of the material such as crystallinity and residual stress of the formed film or the adhesion strength with the substrate For the purpose of modifying the produced film, such as
When forming a thin film on a substrate, a method of heating the substrate is generally used.
従来より用いられている基板の加熱方式としては、基板
や基板を保持する治具の裏側に直接ヒーターを接触させ
て加熱する伝導方式と、基板の上側または下側より赤外
線ヒーター等を用いた輻射熱方式が主なものであり、後
者では基板のどちらか一方側より加熱する方式が用いら
れてきた。Conventionally used substrate heating methods include a conduction method in which a heater is brought into direct contact with the back side of the substrate or a jig that holds the substrate, and a radiant heat using an infrared heater or the like from above or below the substrate. The method is mainly used, and in the latter method, heating is performed from either side of the substrate.
以下に従来の薄膜製造装置について説明する。第２図は
従来の蒸着型薄膜製造装置を示すものである。11は基板
を固定するための治具、12はガラス等の基板、13は基板
加熱のためのヒーター、14はシャッター、15は蒸着源、
16は膜厚計、17は真空槽、18は磁界発生コイルである。The conventional thin film manufacturing apparatus will be described below. FIG. 2 shows a conventional vapor deposition type thin film manufacturing apparatus. 11 is a jig for fixing the substrate, 12 is a substrate such as glass, 13 is a heater for heating the substrate, 14 is a shutter, 15 is an evaporation source,
Reference numeral 16 is a film thickness meter, 17 is a vacuum chamber, and 18 is a magnetic field generating coil.
以上のように構成された薄膜製造装置について、以下に
その動作の説明をする。The operation of the thin film manufacturing apparatus configured as described above will be described below.
まず、基板12をヒーター13で薄膜生成温度にまで加熱を
行い保持をする。また磁界発生コイル17により発生せら
れた磁場中に基板12をおく。次に蒸着源15を電子ビーム
或は抵抗加熱方式等により十分に溶融させ、シャッター
14を開けると加熱された基板上に薄膜が生成される。こ
の場合、基板12の加熱はヒーター13の輻射熱によるもの
であり、基板12の下側からの一方向加熱である。従っ
て、基板12のヒーター13側に熱膨張による応力が加わ
り、この状態での薄膜生成となる。First, the substrate 12 is heated to a thin film formation temperature by the heater 13 and held. Further, the substrate 12 is placed in the magnetic field generated by the magnetic field generating coil 17. Next, the evaporation source 15 is sufficiently melted by an electron beam or resistance heating method, and the shutter is released.
Opening 14 creates a thin film on the heated substrate. In this case, the heating of the substrate 12 is due to the radiant heat of the heater 13, and is unidirectional heating from the lower side of the substrate 12. Therefore, stress due to thermal expansion is applied to the heater 13 side of the substrate 12, and the thin film is formed in this state.
発明が解決しようとする問題点 しかしながら上記のような構成では、基板加熱により前
記基板の表面と裏面とでは著しい温度差を生じる。その
ため基板内部に応力を生じ、このままで薄膜生成を行う
と薄膜生成後の基板温度の低下とともに、最初に基板に
生じた応力と逆向きの応力が生成薄膜にかかることとな
る。そしてこの時、生成薄膜は基板から引張あるいは圧
縮応力を受け、薄膜の特性、特に応力や歪の影響を受け
易い物性は、その特性の劣化や変動等を生じるという問
題点を有していた。Problems to be Solved by the Invention However, in the above-described configuration, a significant temperature difference occurs between the front surface and the back surface of the substrate due to heating of the substrate. Therefore, stress is generated inside the substrate, and if the thin film is formed as it is, the temperature of the substrate after the thin film formation is lowered, and the stress opposite to the stress initially generated in the substrate is applied to the generated thin film. At this time, the produced thin film receives a tensile or compressive stress from the substrate, and the properties of the thin film, particularly the physical properties that are easily affected by stress and strain, have a problem that the properties are deteriorated or fluctuated.
本発明は上記従来の問題点を解決するものであり、従来
の薄膜製造装置に特別な装置を加えることなく容易に基
板の表裏面をほぼ同温度に調整し、基板全体としての歪
を減じたうえで、薄膜の生成が可能な薄膜製造装置を提
供することを目的とする。The present invention solves the above conventional problems, and easily adjusts the front and back surfaces of a substrate to substantially the same temperature without adding a special device to the conventional thin film manufacturing apparatus, and reduces the strain of the entire substrate. Moreover, it is an object of the present invention to provide a thin film manufacturing apparatus capable of producing a thin film.
問題点を解決するための手段 この目的を達成するために本発明の薄膜製造装置は、基
板加熱装置を基板上側に設け、前記基板のすぐ下側に
金，アルミニウム等反射効率の良い材料を用い、かつ基
板側から見てその表面が凹型の球面構造を持ったシャッ
ターを配置するという構成を有している。Means for Solving the Problems In order to achieve this object, the thin-film manufacturing apparatus of the present invention is provided with a substrate heating device on the upper side of the substrate and uses a material having a high reflection efficiency such as gold or aluminum immediately below the substrate. In addition, a shutter having a concave spherical surface is arranged on the surface when viewed from the substrate side.
作用 本発明は上記した構成、すなわち蒸着型薄膜製造装置に
おける基板加熱装置を基板上側に設け、その加熱装置側
である基板の裏面を輻射熱で加熱し、前記輻射熱を基板
のすぐ下側に設けられた金．アルミニウム等反射効率の
良い材料を用い、かつ基板側から見てその表面が凹型の
球面構造を持ったシャッターを用いて反射させ薄膜生成
面である基板表面への加熱としている。従って、前記基
板の表裏面を同時に加熱することとなり、基板にかかる
応力による歪を減少させ、薄膜生成後基板温度が低下し
た場合にも生成薄膜は基板からの応力を受けることが軽
減され、塑性変形、特性変化が軽減される。Function The present invention has the above-mentioned configuration, that is, the substrate heating device in the vapor deposition type thin film manufacturing apparatus is provided on the upper side of the substrate, the back side of the substrate which is the heating device side is heated by radiant heat, and the radiant heat is provided immediately below the substrate. Money. The substrate surface, which is the thin film formation surface, is heated by using a shutter having a spherical surface structure with a concave surface when viewed from the substrate side, using a material having a high reflection efficiency such as aluminum. Therefore, the front and back surfaces of the substrate are heated at the same time, strain due to stress applied to the substrate is reduced, and even when the substrate temperature is lowered after the thin film is produced, the produced thin film is less susceptible to stress from the substrate, and plasticity is reduced. Deformation and characteristic changes are reduced.
実施例 以下本発明の実施例である薄膜製造装置について図面を
参考にしながら説明をする。EXAMPLES Hereinafter, a thin film manufacturing apparatus which is an example of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例における薄膜製造装置の構成
を示すものである。FIG. 1 shows the structure of a thin film manufacturing apparatus in one embodiment of the present invention.
１は基板を固定するための治具、２はガラス等の基板、
３は基板加熱のためのヒーター、４はシャッター、５は
蒸着源、６は膜厚計、７は真空槽、８は磁界発生コイル
である。1 is a jig for fixing the substrate, 2 is a substrate such as glass,
3 is a heater for heating the substrate, 4 is a shutter, 5 is a vapor deposition source, 6 is a film thickness meter, 7 is a vacuum chamber, and 8 is a magnetic field generating coil.
以上のように構成された本実施例の薄膜製造装置につい
て以下にその動作の説明をする。基板２をヒーター３で
薄膜生成温度まで加熱を行う。基板２の上側のヒーター
３の輻射熱により基板２のヒーター３側すなわち裏面の
加熱が行われ、同時に前記輻射熱は基板２のすぐ下側に
設けられかつ基板２側から見て凹面の球面構造を持つ
金，アルミニウム等反射効率の良い金属を使用、或は表
面にそれらの薄膜を生成したシャッター４で基板２の薄
膜生成側である表面に反射をする。従って基板２の表裏
面に対し、薄膜生成温度まで同時に加熱される。次に磁
界発生コイル７によって発生せられた磁場中に基板２を
おく。基板２が薄膜生成温度にまで加熱された後、暫く
保持し蒸着源５を電子ビーム或は抵抗加熱等の手法によ
り十分に溶融後シャッター４を開け基板２に薄膜を生成
する。The operation of the thin film manufacturing apparatus of the present embodiment configured as described above will be described below. The substrate 2 is heated by the heater 3 to a thin film formation temperature. The radiant heat of the heater 3 on the upper side of the substrate 2 heats the heater 3 side of the substrate 2, that is, the back surface, and at the same time, the radiant heat is provided immediately below the substrate 2 and has a concave spherical structure when viewed from the substrate 2 side. A metal having a high reflection efficiency such as gold or aluminum is used, or a shutter 4 having a thin film formed on the surface thereof is used to reflect the thin film on the surface of the substrate 2. Therefore, the front and back surfaces of the substrate 2 are simultaneously heated to the thin film formation temperature. Next, the substrate 2 is placed in the magnetic field generated by the magnetic field generating coil 7. After the substrate 2 is heated to the thin film formation temperature, it is held for a while and the evaporation source 5 is sufficiently melted by a method such as electron beam or resistance heating, and the shutter 4 is opened to form a thin film on the substrate 2.
次に本実施例の薄膜製造装置を用いて磁気抵抗効果素子
として用いるパーマロイ薄膜を生成し、その効果を説明
する。薄膜生成温度を200℃とし、蒸着源５にパーマロ
イインゴットを使用、電子ビーム法によりこれを溶融し
た後、作業圧力１×10-6Torrのもとでパーマロイ薄膜を
約300Å生成した。Next, a permalloy thin film used as a magnetoresistive effect element is produced by using the thin film manufacturing apparatus of this embodiment, and its effect will be described. A thin film formation temperature was set to 200 ° C., a permalloy ingot was used as a vapor deposition source 5, and this was melted by an electron beam method. Then, a permalloy thin film of about 300 Å was formed under a working pressure of 1 × 10 −6 Torr.
なお比較のため従来方法による比較例を以下に示す。比
較例では、基板を下側から赤外線ヒーターで輻射加熱を
行った。シャッターは、蒸着源のパーマロイインゴット
のすぐ上にある。薄膜生成温度を200℃に設定、本実施
例と同じく電子ビーム法によりパーマロイインゴットの
溶融を行い、作業圧力１×10-6Torrのもとでパーマロイ
薄膜を約300Å生成をした。For comparison, a comparative example using the conventional method is shown below. In the comparative example, the substrate was radiantly heated from below with an infrared heater. The shutter is just above the permalloy ingot of the evaporation source. The thin film formation temperature was set to 200 ° C., and the permalloy ingot was melted by the electron beam method as in this example, and about 300Å of the permalloy thin film was formed under the working pressure of 1 × 10 −6 Torr.
実施例，比較例で作製したパーマロイ薄膜の磁気抵抗効
果を、直流磁場中で350℃で40分間アニールを行った前
後の比抵抗の変化率で比較した結果を第３図に示す。FIG. 3 shows the results of comparing the magnetoresistive effect of the permalloy thin films produced in Examples and Comparative Examples with the rate of change in resistivity before and after annealing at 350 ° C. for 40 minutes in a DC magnetic field.
比抵抗の変化率の測定は、60Hzの交番磁界を発生するヘ
ルムホルツコイルの中に一定形状にパターン化されたパ
ーマロイ薄膜を設置し、測定は四端子法により定電流を
流した時の抵抗変化から比抵抗を算出し、アニール前と
の変化率で比較した。第３図よりアニール後における磁
気特性の劣化を改善することができ、耐熱性の向上が確
認できた。To measure the rate of change of resistivity, a permalloy thin film patterned in a certain shape was installed in a Helmholtz coil that generates an alternating magnetic field of 60 Hz, and the measurement was made from the resistance change when a constant current was applied by the four-terminal method. The resistivity was calculated and compared with the rate of change before annealing. From FIG. 3, it was confirmed that the deterioration of the magnetic properties after annealing could be improved and the heat resistance could be improved.
発明の効果 本発明の薄膜製造装置は、基板の加熱装置を前記基板の
上側に設け、シャッターを前記基板のすぐ下側に設け
て、かつそのシャッターが基板側から見て凹型の球面構
造を持つことにより、基板裏面の同時加熱を可能にし、
基板の加熱方式によって生じる基板の温度差による応力
等歪の生成薄膜への影響を軽減せしめ、基板に密着性の
良い安定した薄膜の製造が容易に可能な薄膜製造装置で
ある。Advantageous Effects of Invention The thin film manufacturing apparatus of the present invention has a substrate heating device provided on the upper side of the substrate, a shutter provided immediately below the substrate, and the shutter has a concave spherical structure when viewed from the substrate side. This enables simultaneous heating of the backside of the substrate,
The thin film manufacturing apparatus is capable of easily producing a stable thin film having good adhesion to the substrate by reducing the influence on the thin film of generation of strain such as stress due to the temperature difference of the substrate caused by the heating method of the substrate.
第１図は本発明の一実施例における薄膜製造装置の構成
図、第２図は従来例における薄膜製造装置の構成図、第
３図はパーマロイ薄膜の磁気特性図である。 １……治具、２……基板、３……ヒーター、４……シャ
ッター、５……蒸着源、６……膜厚計、７……真空槽、
８……磁界発生コイル。FIG. 1 is a block diagram of a thin film manufacturing apparatus in an embodiment of the present invention, FIG. 2 is a block diagram of a conventional thin film manufacturing apparatus, and FIG. 3 is a magnetic characteristic diagram of a permalloy thin film. 1 ... Jig, 2 ... Substrate, 3 ... Heater, 4 ... Shutter, 5 ... Evaporation source, 6 ... Thickness gauge, 7 ... Vacuum tank,
8 ... Magnetic field generating coil.
Claims (2)
置と、前記基板下側に設けられ、前記加熱装置からの輻
射熱を前記基板に熱反射するように形成されたシャッタ
ーとを具備し、前記加熱装置により基板裏面の加熱を行
うとともに、前記シャッターの熱反射により基板表面の
加熱を行うように構成したことを特徴とする薄膜製造装
置。1. A substrate, a heating device provided on the upper side of the substrate, and a shutter provided on the lower side of the substrate and formed to reflect radiant heat from the heating device to the substrate. The thin film manufacturing apparatus is configured to heat the back surface of the substrate by the heating device and heat the substrate surface by heat reflection of the shutter.
ム等の反射効率の良い材料を用い、かつその表面が凹型
の球面構造であることを特徴とする特許請求の範囲第１
項記載の薄膜製造装置。2. The shutter on the lower side of the substrate is made of a material having high reflection efficiency such as gold or aluminum, and has a concave spherical surface structure.
The thin film manufacturing apparatus according to the item.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60251308A JPH06102826B2 (en) | 1985-11-08 | 1985-11-08 | Thin film manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60251308A JPH06102826B2 (en) | 1985-11-08 | 1985-11-08 | Thin film manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62111485A JPS62111485A (en) | 1987-05-22 |
| JPH06102826B2 true JPH06102826B2 (en) | 1994-12-14 |
Family
ID=17220871
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60251308A Expired - Lifetime JPH06102826B2 (en) | 1985-11-08 | 1985-11-08 | Thin film manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06102826B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4563906B2 (en) * | 2005-09-28 | 2010-10-20 | アルパイン株式会社 | Navigation device |
| JP5584409B2 (en) * | 2008-02-21 | 2014-09-03 | キヤノンアネルバ株式会社 | Sputtering apparatus and control method thereof |
| JP5653052B2 (en) * | 2010-03-09 | 2015-01-14 | スタンレー電気株式会社 | Deposition equipment |
| US8350180B2 (en) | 2010-03-12 | 2013-01-08 | United Technologies Corporation | High pressure pre-oxidation for deposition of thermal barrier coating with hood |
| US20170218505A1 (en) | 2016-02-03 | 2017-08-03 | United Technologies Corporation | System and Method for Low Thermal Shock-Fast Cooling of Thermal Barrier Coating |
-
1985
- 1985-11-08 JP JP60251308A patent/JPH06102826B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62111485A (en) | 1987-05-22 |
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