JPH02124406A - semiconductor manufacturing equipment - Google Patents

Abstract

(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

Detailed Description of the Invention [Field of Industrial Application] This invention relates to semiconductor manufacturing equipment, and in particular to semiconductor manufacturing equipment for forming metal thin films used in semiconductor elements and semiconductor integrated circuits (ICs). It is something.

[Conventional technology]

FIG. 3 is an explanatory diagram of a sputtering apparatus for forming a metal thin film on an S1 wafer subjected to conventional sputtering. In FIG. 1, (1) is a vacuum chamber, and (2) is a negative electrode.

(3) is the positive electrode, (4) is the S1 wafer 5 (5) is the DC power supply, (6) is the metal thin film, (7) is the heater, (8) is the AC electrode, and (9) is the vacuum pub V. Yes, this sputtering equipment first evacuates the vacuum chamber using a vacuum pump (not shown), then heat-IJ (
7)') Heat with AC HA and cool [Fjit (3) Upper IC
16! The 81 wafer (4) is heated to the desired temperature, opened and sealed with Ar gas full vacuum pulp (9), and a DC current is applied between the positive electrode (3) and the negative electrode (2)! (5)
is applied to form a thin metal layer (6) on the surface of the S1 wafer (4).

Eddy current is also a conventional method for measuring film thickness.

There are resistance meters, fluorescent X@1 method, etc., but none of these methods makes it possible to measure the film thickness sound during the formation of a metal thin film. In addition, although quartz crystal film thickness gauges have been used to measure film thickness during vapor deposition, they are not used to measure film thickness during metal thin film formation in sputtering and chemical vapor deposition.
It was impossible to measure the thickness of the metal thin film during growth. Therefore, controlling the film thickness during the formation of the metal thin film is difficult.
This was done by measuring the thickness of the 1C metal thin film and adjusting some conditions on the semiconductor substrate.

[Problem to be solved by the invention]

Conventional film thickness measurement during the formation of a metal thin film was performed as described above, so the formation of a metal thin film depends on the state of the semiconductor manufacturing equipment,
In other words, the film thickness is sensitively affected by gas flow rate, temperature, pressure, etc., and therefore, when controlling the metal film thickness, it is not possible to measure the film thickness after forming the metal thin film using conventional methods, so semiconductor manufacturing is difficult. This has had problems such as delays in determining if equipment abnormalities persist and an increase in product defects.

The invention was made to solve the above-mentioned problems, and it is possible to accurately control the film thickness by measuring the metal thin film formed on the semiconductor substrate during growth, thereby improving the product yield and improving the process. 〇〇〇〇〇〇〇〇〇〇〇Objective? Means for Solving the Problem] The present invention forms a metal thin film on a semiconductor substrate by irradiating a laser beam from an oblique direction onto the surface of a metal thin film formed on the semiconductor substrate and ejecting the maximum reflected light. This allows the thickness of the film to be measured in the middle.

[Effect]

The measurement during the formation of the metal thin film according to the present invention can be performed by irradiating the surface of the metal thin film formed on the semiconductor substrate from an oblique direction and detecting the position of the maximum reflected light. By providing a film thickness measuring device, the metal film thickness can be measured and the film thickness can be controlled during the formation of the metal thin film.

〔Example〕

Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the explanation of this embodiment, the explanation of the same parts as those of the conventional one will be omitted.

FIG. 1 shows the formation of a metal thin film on an S1 wafer from Spats J IJ Song, which is an embodiment of the invention.

FIG. 2 is an explanatory diagram showing a sputtering apparatus IT equipped with a film thickness measuring device. The configuration of this device differs from the configuration of the conventional sputtering device described above, in that the output of the laser beam [1αO] is applied to the wall of the vacuum chamber 1, and the ejection of the laser beam ti! is applied to the light receiving position. ima
This is the point where nr was provided. This laser beam output device αO is H
It may be a θ-N8 laser or an Ar laser. If this thin metal film thickness measuring device using a laser beam is installed in a vacuum chamber and the surface of the S1 wafer (4) is irradiated with a laser beam from an oblique direction from the laser output device αdK during metal thin film formation, the maximum reflection The light changes as the thickness of the metal thin film increases.If this changing maximum reflected light is detected by a laser detector 011 that moves in the changing direction, the movable distance of the laser ejection base can be determined by changing the distance of the laser ejection base from the metal thin film as shown in Fig. 2. By converting the increase in (6), it becomes possible to measure the metal thin film thickness. If this is done continuously or intermittently during the formation of an all-metal thin film, it becomes possible to constantly measure and observe the film thickness during the formation of the metal thin film, and the film thickness can be accurately determined by ending the thin film formation process at the desired film thickness. control becomes possible.

Although the above embodiment describes the case of measuring the film thickness during sputtering, it goes without saying that this mechanism can also be applied to chemical vapor deposition or vacuum evaporation. As described above, according to the present invention, when measuring the thickness of a metal thin film that is being formed on the surface of a semiconductor substrate, the laser beam is irradiated on the metal thin film surface from an oblique direction to output the maximum reflected light at the position 1r@. Film thickness measuring device? By providing it within semiconductor manufacturing equipment.

It is possible to obtain a semiconductor manufacturing apparatus that can measure the thickness of a metal thin film that is being formed, and can accurately control the film thickness through this measurement.

[Brief explanation of drawings]

FIG. 1 shows an embodiment of the present invention. Figure 2 is an explanatory diagram showing a sputtering device in which a laser output device that irradiates the surface of a thin metal film with laser light diagonally and a laser detector that emits the maximum reflected light are installed in a vacuum chamber. The total laser light of the laser output device and laser detector shown,
The enlarged explanatory diagram showing the state of light reception, Figure @3, is an explanatory diagram showing a conventional sputtering apparatus. In the figure, (1) is a vacuum chamber, (2) is a negative pupil, and (3)
is the positive electrode, (4) is the S1 wafer, (5) is the DC power supply, (
6) is a metal thin film, (7) is a heater, (8) is a Vi AC power supply, and (9) is a vacuum valve. αoVi laser output device, I is laser detection Rf4fly
,vinegar. Note that the same reference numerals in Figure 1 indicate the same or equivalent parts.

Claims (1)

[Claims] We have installed a measuring device that can measure the thickness of a thin metal film during formation by irradiating the surface of a thin metal film formed on a semiconductor substrate with laser light from an oblique direction and detecting the position of the maximum reflected light. Features of semiconductor manufacturing equipment.