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JPH0456134A - Manufacture of sio2 film using spin-on-glass method and coating agent thereof - Google Patents

Manufacture of sio2 film using spin-on-glass method and coating agent thereof

Info

Publication number
JPH0456134A
JPH0456134A JP16277990A JP16277990A JPH0456134A JP H0456134 A JPH0456134 A JP H0456134A JP 16277990 A JP16277990 A JP 16277990A JP 16277990 A JP16277990 A JP 16277990A JP H0456134 A JPH0456134 A JP H0456134A
Authority
JP
Japan
Prior art keywords
coating agent
spin
silica
film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16277990A
Other languages
Japanese (ja)
Inventor
Osamu Haida
拜田 治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JFE Steel Corp
Original Assignee
Kawasaki Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kawasaki Steel Corp filed Critical Kawasaki Steel Corp
Priority to JP16277990A priority Critical patent/JPH0456134A/en
Publication of JPH0456134A publication Critical patent/JPH0456134A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To entirely eliminate cracks of an SiO2 film and to improve yield of an Si substrate by using coating agent mixed with fine particles such as silica in addition to normal silanol. CONSTITUTION:0.5% of silica particles having 0.3mum of particle size is mixed with coating agent in which 5% of silanol is added to alcohol solution of organic solvent as silicon compound. An Si substrate is coated with the mixture in thickness of 0.2mum, then preliminarily dried at 100, 150 and 250 deg.C respectively for five min, and further dried at 430 deg.C for 30min. As a result, crack occurrence ratio at the film becomes '0'.

Description

【発明の詳細な説明】 〈産業上の利用分野〉 本発明は、スピンオングラス法を用いたSiO2膜の製
造方法およびその塗布剤に関する。
DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a method for manufacturing an SiO2 film using a spin-on glass method and a coating agent therefor.

〈従来の技術〉 LSIなどの半導体装置を製造する際に、低温でSi基
板表面に5iOz膜を生成させる手段の一つとして、ス
ピンオングラス(Spin On Glass  ;以
下SOGと略称する)法が比較的簡単であるために広く
用いられている。
<Prior art> When manufacturing semiconductor devices such as LSIs, the spin-on glass (hereinafter abbreviated as SOG) method is a relatively popular method for producing a 5iOz film on the surface of a Si substrate at low temperatures. It is widely used because it is simple.

このSOC法は、一般にR75i(OH)<−1l(シ
ラノール)で代表されるケイ素化合物をアルコールなど
の有機溶剤に溶解して調合された塗布剤をSi基板に塗
布し、その後加熱して溶媒を除去す多とともに、脱水縮
合反応によりSiO2膜を生成させるものである。
In this SOC method, a coating agent prepared by dissolving a silicon compound represented by R75i(OH)<-1l (silanol) in an organic solvent such as alcohol is applied to a Si substrate, and then heated to remove the solvent. A SiO2 film is produced by a dehydration condensation reaction together with the removed material.

〈発明が解決しようとする課題〉 ところで、このSOG法においては、加熱の際にSiO
!膜に亀裂が入るという欠点があるから、それを避ける
ために、例えば塗布剤の1回の塗布量を0.1〜o、3
am程度とし、これ以上の厚い膜厚を必要とする場合は
塗布→加熱を複数回繰り返すことにより所定の膜厚を得
ることが提案されている(例えば特開昭51−6047
9号公報参照)。
<Problem to be solved by the invention> By the way, in this SOG method, SiO
! There is a drawback that the film cracks, so in order to avoid this, for example, the amount of coating agent applied at one time should be adjusted to 0.1~0.3
If a thicker film is required, it has been proposed to obtain a predetermined film thickness by repeating coating and heating multiple times (for example, Japanese Patent Application Laid-Open No. 51-6047
(See Publication No. 9).

しかし、この複数回塗布方式でも亀裂を完全に防止する
ことができないので、さらに塗布剤中に少量の燐を含有
させる方法も用いられているが、燐を含む5iOz#に
は吸湿性があることから、半導体装置の特性劣化の原因
となっていた(例えば特開昭64−25543号公報参
照)。
However, even this multiple application method cannot completely prevent cracks, so a method of adding a small amount of phosphorus to the coating agent is also used, but 5iOz#, which contains phosphorus, is hygroscopic. This has been a cause of deterioration in the characteristics of semiconductor devices (see, for example, Japanese Patent Laid-Open No. 64-25543).

本発明は、上記のような課題を解決したスピンオングラ
ス法を用いた5iOt膜の製造方法およびその塗布剤を
提供することを目的とする。
An object of the present invention is to provide a method for manufacturing a 5iOt film using a spin-on glass method that solves the above-mentioned problems, and a coating agent for the same.

<tXBを解決するための手段〉 本発明のSiO□膜の製造方法の特徴とするところは、
スピンオングラス法を用いて低温加熱によりSi基板表
面にSiO□膜を生成させる際に、通常のシラノールに
加えてシリカなどの微粒子を混合した塗布剤を用いるこ
とにある。
<Means for solving tXB> The characteristics of the method for manufacturing a SiO□ film of the present invention are as follows:
When a SiO□ film is formed on the surface of a Si substrate by low-temperature heating using the spin-on-glass method, a coating agent containing fine particles such as silica is used in addition to ordinary silanol.

また、ここで用いる本発明の塗布剤の特徴とするところ
は、ケイ素化合物を有機溶剤に熔解して調合された塗布
剤に粒径が0.005〜0.1 μmの微粒子とされる
シリカなどを0.1〜5%の範囲で混合したものである
Furthermore, the coating agent of the present invention used here is characterized by containing silica particles with a particle size of 0.005 to 0.1 μm in the coating agent prepared by dissolving a silicon compound in an organic solvent. It is a mixture of 0.1 to 5%.

く作 用〉 本発明によれば、塗布剤として従来の塗布剤にソリ力(
SiO□)粒子を添加するようにしたので、その塗布剤
をSi基板表面に塗布した後加熱して脱水縮合される際
、SiO□膜が収縮して亀裂が入ろうとするときに、添
加したシリカ粒子が亀裂に対する抵抗力として働き、亀
裂発生を未然に防止することができる。
Effect> According to the present invention, the coating agent has no warping force (
Since SiO□) particles are added, when the coating agent is applied to the surface of the Si substrate and heated for dehydration condensation, when the SiO□ film shrinks and cracks are about to form, the added silica The particles act as a resistance against cracks and can prevent cracks from occurring.

塗布剤に添加するシリカの粒径および混合割合の限定理
由について、以下に説明する。
The reason for limiting the particle size and mixing ratio of silica added to the coating agent will be explained below.

シリカの平均粒径を0.005〜0.10μmにするこ
と; 下限を0.005μmとしたのは、シリカ微粒子の製造
上の制約であり、製造可能であれば粒径は極力小さいこ
とが好ましい。
The average particle size of silica should be 0.005 to 0.10 μm; The lower limit of 0.005 μm is a restriction in manufacturing silica fine particles, and it is preferable that the particle size is as small as possible if it is possible to manufacture it. .

また、上限をQ、10μmとしたのは、0.10tIm
以上の粒子はSi基板の凸部に付着した場合バターニン
グ上の障害となるためである。
In addition, the upper limit is set to Q and 10 μm, which is 0.10 tIm.
This is because if the above particles adhere to the convex portions of the Si substrate, they will become a hindrance to patterning.

・シリカの混合割合を0.1〜5%の範囲としたこと: 下限を0.1%としたのは、0.1%より混合割合が低
いとクランク防止の効果がないためであり、また、上限
を5%としたのは、5%より混合割合が高いと塗布剤の
粘土が高くなり膜厚の均一性が悪化するためである。
- The mixing ratio of silica was set in the range of 0.1 to 5%: The lower limit was set at 0.1% because if the mixing ratio is lower than 0.1%, there is no effect in preventing cranking. The reason why the upper limit was set at 5% is that if the mixing ratio is higher than 5%, the clay content of the coating agent will increase and the uniformity of the film thickness will deteriorate.

なお、シリカ以外にアルミナ(Al□O3)、チタニア
(TiO□)、ジルコニア(ZrO□)などを使用して
もシリカの場合と同様の作用効果を得ることができる。
Note that the same effects as in the case of silica can be obtained by using alumina (Al□O3), titania (TiO□), zirconia (ZrO□), etc. other than silica.

〈実施例〉 有I!溶荊であるアルコール溶液に、ケイ素化合物とし
てシラノールを5%添加した塗布剤に、粒径063μm
以下のシリカ粒子を0.5%混合して、Si基板表面に
0.2μmの厚みで塗布後、100°C150°C,2
50°Cで各5分間ずつ予備乾燥し、さらニ430’C
7’30分間の乾燥を行った結果、5iO8P/l!テ
の亀裂の発生率ばOであった。
<Example> Yes! A coating agent containing 5% silanol as a silicon compound added to an alcoholic solution containing a particle size of 063 μm.
After mixing 0.5% of the following silica particles and applying it to a thickness of 0.2 μm on the surface of a Si substrate, 100°C, 150°C, 2
Pre-dry at 50°C for 5 minutes each, then dry at 430'C.
As a result of drying for 7'30 minutes, the result was 5iO8P/l! The incidence of cracks was O.

一方、比較のために、アルコール溶液にシラノールを5
%添加した従来の塗布剤を用いて、上記実施例と同一の
条件でSi基板表面に塗布、予備乾燥、乾燥を行ったと
ころ、SiO□膜の亀裂発生率は3%にもなった。
On the other hand, for comparison, 5 silanol was added to the alcohol solution.
When a conventional coating agent containing 10% of SiO2 was applied to the surface of a Si substrate under the same conditions as in the above example, preliminary drying, and drying were performed, the cracking rate of the SiO□ film was as high as 3%.

〈発明の効果〉 本発明によれば、従来の塗布剤にシリカ粒子などを添加
することにより、sio!ll!Jの亀裂の発生を皆無
にすることができ、Si基板の歩留り向上を図ることが
可能である。
<Effects of the Invention> According to the present invention, by adding silica particles to a conventional coating agent, sio! ll! It is possible to completely eliminate the occurrence of J cracks, and it is possible to improve the yield of Si substrates.

Claims (1)

【特許請求の範囲】 1、スピンオングラス法を用いて低温加熱しながらSi
基板表面にSiO_2膜を生成させる際に、シリカなど
の微粒子を混合した塗布剤を塗布した後加熱することを
特徴とするスピンオングラス法を用いたSiO_2膜の
製造方法。 2、ケイ素化合物を有機溶剤に溶解して調合された塗布
剤に粒径が0.005〜0.1μmの微粒子とされるシ
リカなどを0.1〜5%の範囲で混合してなることを特
徴とするスピンオングラス用塗布剤。
[Claims] 1. Si is heated at a low temperature using the spin-on glass method.
A method for producing an SiO_2 film using a spin-on-glass method, which is characterized in that when forming a SiO_2 film on a substrate surface, a coating agent mixed with fine particles such as silica is applied and then heated. 2. It is made by mixing a coating agent prepared by dissolving a silicon compound in an organic solvent with 0.1 to 5% of silica, etc., which are considered to be fine particles with a particle size of 0.005 to 0.1 μm. A special coating agent for spin-on glass.
JP16277990A 1990-06-22 1990-06-22 Manufacture of sio2 film using spin-on-glass method and coating agent thereof Pending JPH0456134A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16277990A JPH0456134A (en) 1990-06-22 1990-06-22 Manufacture of sio2 film using spin-on-glass method and coating agent thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16277990A JPH0456134A (en) 1990-06-22 1990-06-22 Manufacture of sio2 film using spin-on-glass method and coating agent thereof

Publications (1)

Publication Number Publication Date
JPH0456134A true JPH0456134A (en) 1992-02-24

Family

ID=15761055

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16277990A Pending JPH0456134A (en) 1990-06-22 1990-06-22 Manufacture of sio2 film using spin-on-glass method and coating agent thereof

Country Status (1)

Country Link
JP (1) JPH0456134A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000100699A (en) * 1998-09-22 2000-04-07 Toshiba Corp Pattern formation method
US9230860B2 (en) 2011-09-27 2016-01-05 Napra Co., Ltd. Semiconductor substrate, electronic device and method for manufacturing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000100699A (en) * 1998-09-22 2000-04-07 Toshiba Corp Pattern formation method
US9230860B2 (en) 2011-09-27 2016-01-05 Napra Co., Ltd. Semiconductor substrate, electronic device and method for manufacturing the same
US9460965B2 (en) 2011-09-27 2016-10-04 Napra Co., Ltd. Semiconductor substrate, eletronic device and method for manufacturing the same

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