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JP7625671B1 - 酸化物半導体薄膜、薄膜トランジスタおよびスパッタリングターゲット - Google Patents

酸化物半導体薄膜、薄膜トランジスタおよびスパッタリングターゲット Download PDF

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Publication number
JP7625671B1
JP7625671B1 JP2023179023A JP2023179023A JP7625671B1 JP 7625671 B1 JP7625671 B1 JP 7625671B1 JP 2023179023 A JP2023179023 A JP 2023179023A JP 2023179023 A JP2023179023 A JP 2023179023A JP 7625671 B1 JP7625671 B1 JP 7625671B1
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Japan
Prior art keywords
thin film
oxide semiconductor
atm
atoms
film transistor
Prior art date
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JP2023179023A
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English (en)
Japanese (ja)
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JP2025068909A (ja
Inventor
元隆 越智
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobelco Research Institute Inc
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Kobelco Research Institute Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Kobelco Research Institute Inc filed Critical Kobelco Research Institute Inc
Priority to JP2023179023A priority Critical patent/JP7625671B1/ja
Priority to PCT/JP2024/033410 priority patent/WO2025084065A1/fr
Priority to TW113137438A priority patent/TW202517586A/zh
Application granted granted Critical
Publication of JP7625671B1 publication Critical patent/JP7625671B1/ja
Publication of JP2025068909A publication Critical patent/JP2025068909A/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10P14/60—

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2023179023A 2023-10-17 2023-10-17 酸化物半導体薄膜、薄膜トランジスタおよびスパッタリングターゲット Active JP7625671B1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2023179023A JP7625671B1 (ja) 2023-10-17 2023-10-17 酸化物半導体薄膜、薄膜トランジスタおよびスパッタリングターゲット
PCT/JP2024/033410 WO2025084065A1 (fr) 2023-10-17 2024-09-19 Couche mince semi-conductrice à oxyde, transistor à couches minces et cible de pulvérisation
TW113137438A TW202517586A (zh) 2023-10-17 2024-09-30 氧化物半導體薄膜、薄膜電晶體和濺鍍靶材

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2023179023A JP7625671B1 (ja) 2023-10-17 2023-10-17 酸化物半導体薄膜、薄膜トランジスタおよびスパッタリングターゲット

Publications (2)

Publication Number Publication Date
JP7625671B1 true JP7625671B1 (ja) 2025-02-03
JP2025068909A JP2025068909A (ja) 2025-04-30

Family

ID=94392196

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023179023A Active JP7625671B1 (ja) 2023-10-17 2023-10-17 酸化物半導体薄膜、薄膜トランジスタおよびスパッタリングターゲット

Country Status (3)

Country Link
JP (1) JP7625671B1 (fr)
TW (1) TW202517586A (fr)
WO (1) WO2025084065A1 (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009081885A1 (fr) 2007-12-25 2009-07-02 Idemitsu Kosan Co., Ltd. Transistor à effet de champ à oxyde semi-conducteur et son procédé de fabrication
WO2012029454A1 (fr) 2010-08-31 2012-03-08 Jx日鉱日石金属株式会社 Oxyde fritté et pellicule mince semi-conductrice d'oxyde
WO2019107043A1 (fr) 2017-11-29 2019-06-06 株式会社神戸製鋼所 Film mince semi-conducteur à oxyde, transistor à couches minces et cible de pulvérisation cathodique
JP2020194945A (ja) 2019-05-30 2020-12-03 株式会社神戸製鋼所 ディスプレイ用酸化物半導体薄膜、ディスプレイ用薄膜トランジスタ及びスパッタリングターゲット
WO2020241227A1 (fr) 2019-05-30 2020-12-03 株式会社コベルコ科研 Corps fritté à base d'oxyde et cible de pulvérisation
US20210135014A1 (en) 2019-10-30 2021-05-06 Lg Display Co., Ltd. Thin film transistor, gate driver including the same, and display device including the same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009081885A1 (fr) 2007-12-25 2009-07-02 Idemitsu Kosan Co., Ltd. Transistor à effet de champ à oxyde semi-conducteur et son procédé de fabrication
WO2012029454A1 (fr) 2010-08-31 2012-03-08 Jx日鉱日石金属株式会社 Oxyde fritté et pellicule mince semi-conductrice d'oxyde
WO2019107043A1 (fr) 2017-11-29 2019-06-06 株式会社神戸製鋼所 Film mince semi-conducteur à oxyde, transistor à couches minces et cible de pulvérisation cathodique
JP2020194945A (ja) 2019-05-30 2020-12-03 株式会社神戸製鋼所 ディスプレイ用酸化物半導体薄膜、ディスプレイ用薄膜トランジスタ及びスパッタリングターゲット
WO2020241227A1 (fr) 2019-05-30 2020-12-03 株式会社コベルコ科研 Corps fritté à base d'oxyde et cible de pulvérisation
US20210135014A1 (en) 2019-10-30 2021-05-06 Lg Display Co., Ltd. Thin film transistor, gate driver including the same, and display device including the same

Also Published As

Publication number Publication date
JP2025068909A (ja) 2025-04-30
WO2025084065A1 (fr) 2025-04-24
TW202517586A (zh) 2025-05-01

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