JP5939801B2 - Manufacturing method of electronic component package - Google Patents

Description

  The present invention relates to a method for manufacturing an electronic component package for storing an electronic component typified by a crystal resonator or a piezoelectric element, and an electronic component package.

  Since a crystal resonator is excellent in frequency characteristics, it is frequently used as a device, specifically, one of printed circuit board mounting components. However, in order to stabilize the characteristics of the crystal resonator, it is desirable to put it in a sealed container in order to block the influence of outside air. An example of such a package structure is proposed in “Glass-ceramic composite and flat package piezoelectric component using the same” (Patent Document 1).

  According to the above structure example, the package is made of a material having a thermal expansion coefficient substantially the same as that of the crystal piece in the package in which the crystal piece is placed in the base member and the cap member is covered, and the glass powder is mixed with the ceramic. The package is made up of what you have done.

  However, since the package is a glass-ceramic composite, it is produced by single-piece production in which a crystal piece is placed on one base member and a cap member is placed thereon, so that the productivity is remarkably low. In addition, glass-ceramic composites are difficult to process and increase production costs.

  In order to eliminate these drawbacks, a method of manufacturing a package with glass that can be easily processed has been proposed, and an “electronic component package” (Patent Document 2) and the like have been proposed.

  The outline of the prior art described in Patent Document 2 will be described with reference to FIG. According to Patent Document 2, a step of forming a through hole in the base member 110 (a), a step of pouring low-melting glass into the through hole and fitting the metal pin 120 (b), pushing the metal pin 120, and a glass plate A step (c) of processing into a concave shape, a step (d) of forming the electrode 130 by printing, a step (e) of mounting a component 140 such as a crystal resonator on a metal pin, and the cap member 160 via the sealing material 150 A method of manufacturing the electronic component package 100 through the step (f) of sealing and joining the base member 110 has been proposed. Among them, in the step (c), by setting the heating temperature to be equal to or higher than the softening point temperature (about 1000 ° C.) of the glass, the metal pin 120 adhered and fixed to the base member 110 can be obtained by welding the glass. Therefore, it is possible to reliably maintain confidentiality in the step (f) and to manufacture at a low cost.

JP-A-11-302034 JP 2003-209198 A

  However, there is a problem shown in FIG. 8 in step (c) of the method for manufacturing the electronic component package 100 described above. That is, as shown in (c-1), when the metal pin 120 is shorter than the thickness of the base member 110, or when the metal pin 120 is pushed in a small amount, the peripheral surface of the metal pin 120 is wrapped in the low melting point glass 170. Therefore, the conductivity with the electrode 130 formed in the step (d) cannot be ensured. Further, as shown in (c-2), even if the metal pin 120 is pushed in as designed, the glass covers the tip of the metal pin 120 because the base member 110 is exposed to a temperature equal to or higher than the softening point of the glass. There is a concern to do. Furthermore, as shown in (c-3), the metal pin 120 is exposed to a temperature of about 1000 ° C., an oxide film 180 grows around the metal pin 120, and the electrode 130 and the electronic component 140 are electrically connected. There is a problem of disappearing.

An object of the present invention has good productivity, yet is to provide a manufacturing how the electronic component package securing the conductivity between the electronic component and the external electrodes.

In order to solve the above-described problems, the present invention provides the following means.
The invention according to claim 1 is a method of manufacturing an electronic component package, the step of forming a through hole vertically passing through a glass base material, and a low melting point in the through hole lower than that of the base material. Apply a melting point glass, insert a conductive member with a protruding part that partially protrudes from the through hole when inserted into the through hole, and weld the conductive member to cover the periphery with the low melting point glass A step of polishing the base material from above and below to remove the protruding portion, a step of mounting an electronic component on the end of the conductive member from which the protruding portion is removed, and the conductive member Forming an insulating resin on the surface of the low melting point glass covering the peripheral surface near the end opposite to the end on the side from which the protruding portion is removed, and the end surface of the opposite end of the conductive member Forming a metal film on the metal film, and through the metal film Characterized in that it comprises a step of electrically connecting the Kishirubeden member and the outer electrode.
By doing in this way, after removing the oxide film produced | generated at the time of welding, since it can prevent that an oxide film grows on the electrically-conductive member surface, the favorable electroconductivity with an electronic component and an external electrode is securable.

  The invention according to claim 2 is the method for manufacturing the electronic component package according to claim 1, wherein the step of mounting the electronic component is an end of the conductive member on the side where the protruding portion is removed. A step of forming an internal wiring at a portion, a step of supporting the electronic component from a lower surface by a connecting member disposed on an upper surface of the internal wiring, and a cover material having a recess on a surface facing the base material. Joining the material and sealing the electronic component in the recess.

The invention according to claim 3 is the method of manufacturing the electronic component package according to claim 1 or 2, wherein in the step of forming the insulating resin, the insulating resin is opposite to the conductive member. It is formed so as not to cover the end face of the side end.
By doing in this way, the electrical conduction failure by an insulating resin can be avoided and the electrical connection location of a conductive member and an external electrode can be ensured reliably.

The invention according to claim 4 is the method of manufacturing an electronic component package according to any one of claims 1 to 3, wherein the metal film is formed by a plating method in the step of forming the metal film. It is formed.
By doing so, the metal film can be formed only on the end face of the conductive member without providing a photolithography process and without using a mask or the like.

The invention according to claim 5 is the method for manufacturing an electronic component package according to any one of claims 1 to 4, wherein a plurality of electronic components are collectively formed on one base material. The method further comprises the step of dividing into individual electronic parts.
By doing in this way, a low-cost electronic component package can be provided by manufacturing collectively.

The invention according to claim 6 is an electronic component package, and is made of a glass base material provided with a through-hole penetrating vertically and a low melting point lower than that of the base material. A conductive member whose periphery is covered with a melting point glass; an electronic component mounted on one end of the conductive member; a metal film formed on an end surface of the other end of the conductive member; and a surface of the metal film. And an external electrode.
By doing in this way, after removing the oxide film produced | generated at the time of welding, since it can prevent that an oxide film grows on the electrically-conductive member surface, the favorable electroconductivity with an electronic component and an external electrode is securable.

  Further, the metal film on the surface of the conductive member provides an electronic component package in which the material on the outermost surface is a noble metal of gold, silver, platinum, palladium, rhodium, iridium, ruthenium, or osmium. By doing in this way, an external electrode can be formed more stably by covering with a metal film having a small ionization tendency, and conduction between the electronic component and the external electrode can be ensured.

  In addition, the conductive member is any one of an iron-nickel alloy, a kovar alloy, and an iron-nickel-chromium alloy, and the metal film is provided using nickel-substituted electroless plating. At this time, the component of the low melting point glass becomes the catalyst poison of the plating, and by covering with an insulating resin, the catalyst poisoning action can be eliminated, and the noble metal film can be formed with good direct adhesion, so the electronic component package is configured. Because it can minimize damage to other members such as low-melting glass and can form a metal film with a small number of steps, a mask required for film formation by a normal sputtering method becomes unnecessary. Conductivity between the electronic component and the external electrode can be ensured at low cost.

  According to the present invention, at the time of welding the base material (low melting point glass of the through hole) and the conductive member, the oxide film generated on the conductive member can be removed by polishing, and the metal film is provided on the end surface of the conductive member. Electrical connectivity between the conductive member and the external electrode is ensured. Further, since the base material is a glass material excellent in workability, it can be manufactured with good productivity and low cost. Furthermore, the components in the low-melting glass applied to the through-holes inhibit the plating process (nickel plating process) for forming the conductive member, but by covering the low-melting glass with an insulating resin, the plating process can be performed. Therefore, a highly reliable product can be provided at a low cost.

  Therefore. INDUSTRIAL APPLICABILITY The present invention can provide an electronic component package manufacturing method and an electronic component package that have good productivity and ensure electrical conductivity between the electronic component and the external electrode.

It is sectional drawing of the electronic component package which concerns on this invention. It is a figure which shows the manufacturing process of the electronic component package which concerns on this invention. It is sectional drawing of another electronic component package which concerns on this invention. It is a figure which shows the manufacturing process of another electronic component package which concerns on this invention. FIG. 5 is a diagram showing a state where the conductive member is displaced from the central axis of the through hole in the manufacturing process of the electronic component package shown in FIG. 4. FIG. 5 is a diagram showing a state after the metal film is formed and before the insulating resin is removed in the manufacturing process of the electronic component package shown in FIG. 4. It is a figure which shows the manufacturing process of a prior art example. It is an expanded sectional view of the metal pin part of a prior art example.

(Embodiment 1)
An embodiment (Embodiment 1) of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view of an electronic component package according to the present invention. The electronic component package 1 has a configuration in which an electronic component 60 is mounted in an internal space surrounded by a glass base material 11 and a cover 70.

  Here, the electronic component 60 includes a connection part 50 that supports the lower surface of the electronic component 60, an internal wiring 40 formed on the upper surface of the base material 11, and a conductive member that ensures conductivity over the base material 11. 31 and a metal film 80 disposed on the lower surface of the base material 11 are electrically connected to an external electrode 90 which is a terminal mounted on the substrate. The electronic component 60 is made of, for example, a crystal resonator or a piezoelectric element.

  The connection unit 50 is made of, for example, a fired conductive adhesive such as silver paste. However, depending on the configuration of the electronic component 60, the conductive adhesive may not be used. The connection part 50 supports the lower surface of the electronic component 60.

  As the conductive member 31, an iron-nickel alloy, a kovar alloy, an iron-nickel-chromium alloy, or the like is used. The conductive member 31 may be a metal other than these, and by using a material having a thermal expansion coefficient close to that of the base material 11, it is possible to prevent destruction due to thermal history. The low melting point glass 21 covering the peripheral surface of the conductive member 31 is a member formed when the conductive member 31 described later is welded. Specifically, the low-melting glass 21 is obtained by firing (cooling after heating and melting) a glass frit, and is composed of oxide powder such as Si (or Ni, Fe, Bi, Zn, Al, B). It has been done. The low melting point glass 21 melts at a melting point (about 400 to 500 ° C.) lower than the melting point of the glass constituting the base material 11 (which varies depending on the glass composition ratio, but about 600 to 1500 ° C.). This is because the melting point of the low melting glass 21 is lowered by adding an alkali oxide powder such as Bi2O3 or Na2O to the SiO2 powder.

  The metal film 80 is a metal film disposed on the lower surface of the base material 11. The metal film 80 uses a noble metal such as gold, silver, platinum, palladium, rhodium, iridium, ruthenium, or osmium on the outermost surface. Here, the noble metal has a small ionization tendency and has corrosion resistance, so that it is possible to suppress temporal deterioration until the external electrode 90 is formed and deterioration due to heating after mounting on the substrate. Increased reliability as (electronic component package 1). Here, in order to prevent the metal film 80 from diffusing metal with the conductive member 31, a metal film such as nickel may be formed between the base layer and the noble metal film as a diffusion preventing layer. A plating method is used as a method for forming the metal film. Further, when the conductive member 31 includes a nickel component, nickel-substituted electroless plating can be directly used when forming the metal film 80, so that the normal plating process can be omitted. As a result, since the plating only needs to be formed on the conductive member 31, the cost of the electronic component package 1 can be reduced. At this time, when the low-melting glass 21 comes into contact with the plating solution, the components of the low-melting glass 21 adversely affect the plating solution, so that the plating solution can function normally by being covered with the insulating resin 25. In particular, it is known that bismuth, which is a component of the low-melting glass 21, becomes a catalyst poison at the time of nickel plating, and it is necessary to take measures to prevent the low-melting glass 21 from being exposed.

  The external electrode 90 is a terminal for electrical connection with the outside, and the upper surface is fixed to the metal film 80. The material of the external electrode 90 may be, for example, a sputtered film. However, since the base material 11 made of glass is brittle, it is more preferable to use a conductive adhesive such as a silver paste for the purpose of relieving stress during mounting on the substrate. preferable. By using an epoxy resin for the insulating resin 25, the conductive adhesive and the insulating resin 25 contain an epoxy resin, so that they can be firmly adhered to each other.

(Electronic component package manufacturing method)
The electronic component package 1 shown in FIG. 1 is a sectional view in a state of being singulated, but as a manufacturing method, it is not a separate package, but is manufactured at a wafer level and finally cut by dicing or the like. It is. Next, a method for manufacturing the electronic component package 1 will be described with reference to FIG.

FIG. 2 is a diagram showing a manufacturing process of the electronic component package according to the present invention.
Step (a) is a step of forming a through hole penetrating the base material 10 in the vertical direction. The through hole is formed in a tapered shape by, for example, sand blasting, laser processing, drilling, hot pressing, or the like.

  Step (b) is a step of welding the conductive member 30 with the low-melting glass 20 applied inside the through hole. Here, the conductive member 30 is a T-shaped member whose part is larger than the upper end of the through hole so as not to fall off from the through hole. In order to weld the glass, it is necessary to set the temperature to 400 to 500 ° C., at which the low melting point glass melts. When heated at such a temperature, an oxide film is formed on the T-shaped head portion of the conductive member 30. As a result, continuity cannot be obtained.

  In the step (c), the conductive member 30, the low-melting glass 20, and the base material 10 are polished from above and below to remove the T-shaped head portion of the conductive member 30 and cover the lower end. In this step, the conductive member 30 is exposed. Here, the base material 10 is thinly polished together with the conductive member 30 and the low melting point glass 20. By doing so, the low melting point glass 20 covering the lower portion of the conductive member 30 is eliminated, and conduction is established via the conductive member 31 (polished conductive member 30) above and below the base material 11 (polished base material 10). It will be ready to take.

  Step (d) is a step of forming the internal wiring 40 on the upper surface of the conductive member 31. The internal wiring 40 is formed by a sputtering method and becomes a circuit that electrically connects the electronic component 60 and the conductive member 31. At this point, since the conductive member 31 on the side where the electronic component 60 is mounted is covered with the internal wiring 40, there is no concern about the growth of an oxide film, and conduction is ensured.

  Step (e) is a step of mounting the electronic component 60 on the upper portion of the base material 11 via the connection portion 50 disposed on the upper portion of the internal wiring 40.

  Step (f) is a step of joining the base material 11 to the cover 70 in which a part of the surface facing the base material 11 is processed into a concave shape. The material of the cover 70 may be appropriately selected in consideration of the joining method, specifications required for the electronic component 60 (for example, the degree of vacuum), cost, and the like. For example, when the electronic component 60 is a crystal resonator and the frequency is adjusted after the base material 11 and the cover 70 are joined, a glass member is selected for the cover 70.

  Step (g) is a step of forming the insulating resin 25 on the bottom surface of the through hole (low melting point glass 21). The insulating resin 25 is formed to cover the low-melting glass 21 that adversely affects the plating solution when plating is performed in a process described later. In FIG. 2G, the insulating resin 25 is partially formed also on the base material 11, but it is not necessarily formed. Although not formed on the bottom surface of the conductive member 31, the conductive member 31 may be partially covered as long as the entire bottom surface of the conductive member 31 is not covered. Here, an epoxy resin or the like can be used as the material of the insulating resin 25.

  Step (h) is a step of forming the metal film 80 on the bottom surface of the conductive member 31 by plating. Depending on the bonding method described so far, the oxide film may grow again. This oxide film can be removed by pretreatment such as acid cleaning during plating. The pretreatment such as acid cleaning may etch the low melting point glass, but it can be protected by forming the insulating resin 25. Moreover, the metal film 80 can be formed only on the end surface of the conductive member 31 by performing electroless plating.

  Step (i) is a step of forming the external electrode 90 on the lower surface of the metal film 80. The external electrode 90 is formed by sputtering or printing and baking a conductive adhesive. Further, a sputtered film or a plated film may be formed on the conductive resin.

  Then, the electronic component package shown in FIG. 1 can be manufactured by performing the process of dividing into pieces which is not shown in figure. Specifically, depending on the material of the cover material 70. Although the method of dividing into individual pieces varies, for example, the pieces are divided into pieces by dicing or laser cutting.

  As described above, according to the method for manufacturing the electronic component package 1 according to the present embodiment, the oxide film generated on the conductive member 30 is polished when the base member 10 (low-melting glass 20 having a through hole) and the conductive member 30 are welded. Since the metal film 80 is provided on the end face of the conductive member 30, the electrical connection between the conductive member 30 and the external electrode 90 is ensured. Moreover, since the base material 10 is a glass material excellent in workability, it can be manufactured with good productivity and low cost. Furthermore, although the components in the low-melting glass 20 applied to the through-holes obstruct the plating process (nickel plating process) for forming the conductive member 30, the insulating resin 25 covers the low-melting glass 20, thereby plating. Since processing is possible, the highly reliable electronic component package 1 can be provided at low cost.

(Embodiment 2)
Next, Embodiment 2 of the present invention will be described with reference to the drawings. FIG. 3 is a cross-sectional view of the electronic component package 1a according to the second embodiment. Here, the electronic component package 1a shown in FIG. 3 is different from the electronic component package 1 shown in FIG. 1 in that a part of the low-melting glass 21 is removed by an etching process, and the insulating resin 25a is formed in the etched portion. It is a point that is filled.

  The electronic component package 1 a has a configuration in which an electronic component 60 is mounted in an internal space surrounded by a glass base material 11 and a cover 70.

  Here, the electronic component 60 includes a connection portion 50 that supports the lower surface of the electronic component 60, an internal wiring 40 formed on the upper surface of the base material 11, and a conductive member 31 that ensures conduction over the base material 11. And an external electrode 90 which is a terminal mounted on the substrate through a metal film 80 disposed on the lower surface of the base material 11. The electronic component 60 is made of, for example, a crystal resonator or a piezoelectric element.

The connection unit 50 is made of, for example, a fired conductive adhesive such as silver paste. However, depending on the configuration of the electronic component 60, the conductive adhesive may not be used. The connection part 50 supports the lower surface of the electronic component 60.
The internal wiring 40 is a wiring member formed on the upper surface of the base material 11 and electrically connects the connection portion 50 and the conductive member 31.

  The conductive member 31 is a conductive member formed over the base material 11 and electrically connects the internal wiring 40 and the external electrode 90 (metal film 80) disposed at the upper and lower ends. As the conductive member 31, for example, an iron-nickel alloy, a kovar alloy, an iron-nickel-chromium alloy, or the like is used. The conductive member 31 may be a metal other than these, and by using a material having a thermal expansion coefficient close to that of the base material 11, it is possible to prevent destruction due to thermal history. The low melting point glass 21 covering the peripheral surface of the conductive member 31 is a member formed when the conductive member 31 described later is welded. Specifically, the low-melting glass 21 is obtained by firing (cooling after heating and melting) a glass frit, and is composed of oxide powder such as Si (or Ni, Fe, Bi, Zn, Al, B). It has been done. The low melting point glass 21 melts at a melting point (about 400 to 500 ° C.) lower than the melting point of the glass constituting the base material 11 (which varies depending on the glass composition ratio, but about 600 to 1500 ° C.). This is because the melting point of the low melting glass 21 is lowered by adding an alkali oxide powder such as Bi2O3 or Na2O to the SiO2 powder.

  The metal film 80 is a metal film disposed on the lower surface of the base material 11. The metal film 80 uses a noble metal such as gold, silver, platinum, palladium, rhodium, iridium, ruthenium, or osmium on the outermost surface. Here, the noble metal has a small ionization tendency and has corrosion resistance, so that it is possible to suppress temporal deterioration until the external electrode 90 is formed and deterioration due to heating after mounting on the substrate. The reliability as the (electronic component package 1a) is increased. Here, in order to prevent the metal film 80 from diffusing metal with the conductive member 31, a metal film such as nickel may be formed between the base layer and the noble metal film as a diffusion preventing layer. A plating method is used as a method for forming the metal film. Further, when the conductive member 31 includes a nickel component, nickel-substituted electroless plating can be directly used when forming the metal film 80, so that the normal plating process can be omitted. As a result, the plating needs to be formed only on the conductive member 31, so that the cost of the electronic component package 1a can be reduced.

  The external electrode 90 is a terminal for electrical connection with the outside, and the upper surface is fixed to the metal film 80. The material of the external electrode 90 may be, for example, a sputtered film. However, since the base material 11 made of glass is brittle, it is more preferable to use a conductive adhesive such as a silver paste for the purpose of relieving stress during mounting on the substrate. preferable.

(Electronic component package manufacturing method)
The electronic component package 1a shown in FIG. 3 is a sectional view in a state of being singulated, but the manufacturing method is not an individual package, but is manufactured at a wafer level and finally cut by dicing or the like. It is. Next, a method for manufacturing the electronic component package 1a will be described with reference to FIGS.

FIG. 4 is a diagram showing a manufacturing process of the electronic component package according to the present invention.
Step (a) is a step of forming a through hole penetrating the base material 10 in the vertical direction. The through hole is formed in a tapered shape by, for example, sand blasting, laser processing, drilling, hot pressing, or the like.

  Step (b) is a step of welding the conductive member 30 with the low-melting glass 20 applied inside the through hole. Here, the conductive member 30 is a T-shaped member whose part is larger than the upper end of the through hole so as not to fall off from the through hole. In order to weld the glass, it is necessary to set the temperature to 400 to 500 ° C., at which the low melting point glass melts. When heated at such a temperature, an oxide film is formed on the T-shaped head portion of the conductive member 30. As a result, continuity cannot be obtained.

  In the step (c), the conductive member 30, the low-melting glass 20, and the base material 10 are polished from above and below to remove the T-shaped head portion of the conductive member 30 and cover the lower end. In this step, the conductive member 30 is exposed. Here, the base material 10 is thinly polished together with the conductive member 30 and the low melting point glass 20. By doing so, the low melting point glass 20 covering the lower portion of the conductive member 30 is eliminated, and conduction is established via the conductive member 31 (polished conductive member 30) above and below the base material 11 (polished base material 10). It will be ready to take.

  Step (d) is a step of forming the internal wiring 40 on the upper surface of the conductive member 31. The internal wiring 40 is formed by a sputtering method and becomes a circuit that electrically connects the electronic component 60 and the conductive member 31. At this point, since the conductive member 31 on the side where the electronic component 60 is mounted is covered with the internal wiring 40, there is no concern about the growth of an oxide film, and conduction is ensured.

  Step (e) is a step of mounting the electronic component 60 on the upper portion of the base material 11 via the connection portion 50 disposed on the upper portion of the internal wiring 40.

  Step (f) is a step of joining the base material 11 to the cover 70 in which a part of the surface facing the base material 11 is processed into a concave shape. The material of the cover 70 may be appropriately selected in consideration of the joining method, specifications required for the electronic component 60 (for example, the degree of vacuum), cost, and the like. For example, when the electronic component 60 is a crystal resonator and the frequency is adjusted after the base material 11 and the cover 70 are joined, a glass member is selected for the cover 70.

  Step (g) is a step of etching a part of the low melting point glass 21 to form an insulating resin 25a in the etched portion. The insulating resin 25a is formed to cover the low-melting glass 21 that adversely affects the plating solution when plating is performed in a process described later. In order to cover with the minimum amount of insulating resin 25a, the low melting point glass 21 is etched by acid cleaning or the like, and the etched portion is filled with the insulating resin 25a. Here, when the low melting point glass is formed by screen printing or the like without etching, if the conductive member 31 is displaced from the central axis of the through hole as shown in FIG. 5, the conductive member 31 is made of the insulating resin 25a. It is covered and conduction cannot be secured. On the other hand, with this etching method, conduction can be ensured even when the conductive member 31 is displaced from the central axis. As the material of the insulating resin 25a, an epoxy resin or a resist that can be used as an organic solvent can be used.

  Step (h) is a step of forming the metal film 80 on the surface (lower surface) of the conductive member 31 by plating. Depending on the bonding method described so far, the oxide film may grow again. This oxide film can be removed by pretreatment such as acid cleaning during plating. The pretreatment such as acid cleaning may etch the low melting point glass, but it can be protected by forming the insulating resin 25a. Moreover, the metal film 80 can be formed only on the end surface of the conductive member 31 by performing electroless plating. At this time, when the low melting point glass 21 comes into contact with the plating solution, the components of the low melting point glass 21 adversely affect the plating solution, but the influence on the plating solution is blocked by covering the etching portion with the insulating resin 25a. be able to. In particular, it is known that bismuth, which is a component of the low-melting glass 21, becomes a catalyst poison at the time of nickel plating, and it is necessary to take measures to prevent the low-melting glass 21 from being exposed. Note that after the metal film 80 is formed by plating as shown in FIG. 6, the insulating resin 25a is removed with an organic solvent to form a state where the insulating resin 25a is removed as shown in FIG. The

  Step (i) is a step of forming the external electrode 90 on the lower surface of the metal film 80. The external electrode 90 is formed by sputtering or printing and baking a conductive adhesive. Further, a sputtered film or a plated film may be formed on the conductive resin.

  Then, the electronic component package 1a shown in FIG. 3 can be manufactured by performing the process of dividing into pieces which is not illustrated. Specifically, although the method of dividing into pieces varies depending on the material of the cover material 70, for example, the dividing is performed by dicing or laser cutting.

  As described above, according to the method for manufacturing the electronic component package 1a according to the present embodiment, the oxide film generated on the conductive member 30 is polished when the base material 10 (low-melting glass 20 having a through hole) and the conductive member 30 are welded. Since the metal film 80 is provided on the end face of the conductive member 30, the electrical connection between the conductive member 30 and the external electrode 90 is ensured. Moreover, since the base material 10 is a glass material excellent in workability, it can be manufactured with good productivity and low cost. Furthermore, although the components in the low-melting glass 20 applied to the through-holes obstruct the plating process (nickel plating process) for forming the conductive member 30, plating is performed by covering the low-melting glass 20 with the insulating resin 25 a. Since processing is possible, a highly reliable electronic component package 1a can be provided at low cost.

  The description in the above embodiment is an example of a suitable electronic component package and a manufacturing method thereof according to the present invention, and the present invention is not limited to this. In addition, the detailed configuration of each part of the electronic component package in the above embodiment can be changed as appropriate without departing from the spirit of the present invention. Specifically, for example, the shape of the through hole formed in the base material 10 is not limited to the tapered shape, and may be a cylindrical shape or the like. Further, the conductive member 30 is not limited to a shape having a T-shaped head portion, as long as a part of the conductive member 30 is larger than the upper end of the through hole. Further, the electronic component package 1 and the electronic component 10 mounted on the electronic component package 1a are exemplified by the crystal resonator and the piezoelectric element, but other electronic components may naturally be used.

DESCRIPTION OF SYMBOLS 1,1a Electronic component package 10,11 Base material 20,21 Low melting glass 25,25a Insulating resin 30,31 Conductive member 40 Internal wiring 50 Connection part 60 Electronic component 70 Cover 80 Metal film 90 External electrode 100 Electronic component package 110 Base Member 120 Metal pin 130 Electrode 140 Electronic component 150 Sealant 160 Cap member 170 Low melting point glass 180 Oxide film

Claims (6)

Forming a through-hole penetrating the glass base material up and down;
A low melting point glass having a melting point lower than that of the base material is applied to the through hole, and when inserted into the through hole, a conductive member provided with a protruding portion partially protruding from the through hole is inserted, Welding the member so as to cover the periphery with the low melting point glass;
Polishing the base material from above and below to remove the protrusions;
Mounting an electronic component on the end of the conductive member from which the protruding portion is removed;
Forming an insulating resin on the surface of the low melting point glass covering the peripheral surface in the vicinity of the end opposite to the end on the side where the protruding portion of the conductive member is removed; and
Forming a metal film on an end surface of the opposite end of the conductive member;
Electrically connecting the conductive member and the external electrode through the metal film;
The manufacturing method of the electronic component package characterized by including. The step of mounting the electronic component includes:
Forming internal wiring at the end of the conductive member from which the protruding portion is removed;
A step of supporting the electronic component from the lower surface with a connecting member disposed on the upper surface of the internal wiring;
Bonding a cover material having a recess on a surface facing the base material to the base material and sealing the electronic component in the recess;
The manufacturing method of the electronic component package of Claim 1 characterized by the above-mentioned.   The method of manufacturing an electronic component package according to claim 1, wherein the through hole has a tapered shape. Oite the step of forming the insulating resin, the insulating resin may be any of claims 1 to 3, characterized by being formed so as not to cover the end surface of the opposite end portions of said conductive member The manufacturing method of the electronic component package of 1 item | term.   5. The method of manufacturing an electronic component package according to claim 1, wherein in the step of forming the metal film, the metal film is formed by a plating method.   The electronic component according to any one of claims 1 to 5, further comprising a step of individually forming a plurality of electronic components on one base material and then separating the electronic components into units. Package manufacturing method.

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