JP2013055114A - Manufacturing method of electronic device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of an electronic device capable of stably keeping conduction between an electronic component and an external electrode, and easily forming a through electrode.SOLUTION: A manufacturing method of an electronic device includes the steps of: (a) forming a hollow on either of upper and lower surfaces of a base material 9; (b) filling the hollow with a plating layer 21 by performing via-fill plating processing for the hollow; and (c) forming a base 10 having a through electrode 20 composed of a plating layer 21 on a base material 9 after polishing by polishing the base material 9 so that at least a bottom surface of the hollow is exposed outside.

Description

  The present invention relates to a method for manufacturing an electronic device typified by a crystal resonator or a piezoelectric element.

  Since a crystal resonator is excellent in frequency characteristics, it is frequently used as a device, specifically, one of printed circuit board mounting components. Here, in order to stabilize the characteristics of the crystal resonator, it is necessary to block the influence of outside air. As an example of such a package structure, a “glass-ceramic composite and a flat package type piezoelectric component using the same” described later has been proposed (Patent Document 1).

  In the package described in Patent Document 1, a ceramic resonator piece, which is a material having substantially the same thermal expansion coefficient as that of a quartz resonator piece, is mixed in an electronic device in which a quartz resonator piece is placed in a base and a cap is put on the base. A package is constructed using a thing. However, since this package is a glass-ceramic composite, it is made by single-piece production by placing a crystal resonator piece on one base and covering the cap, so the productivity is extremely low. In addition, this package is difficult to process the glass-ceramic composite, which increases production costs.

  In order to eliminate these drawbacks, a method of manufacturing a package with glass that is easy to process has been proposed. As an example, an “electronic component package” described later is known (Patent Document 2).

  The outline of the electronic component package described in Patent Document 2 will be described with reference to FIG. In the electronic component package, a step (a) of forming a through hole in the base 110, a step (b) of pouring low melting glass into the through hole and fitting the metal pin 120, pushing the metal pin 120 and making the glass plate concave Step (c) for processing, step (d) for forming electrode 130 by printing, step (e) for mounting component 140 such as a crystal resonator on metal pin 120, cap 160 and base 110 via sealing material 150 The electronic device 100 is manufactured through the step (f) of sealing and bonding the components. Here, in the step (c), the metal pin 120 adhered and fixed to the base 110 can be obtained by welding the glass at a heating temperature equal to or higher than the softening point temperature (about 1000 ° C.) of the glass. In step f), confidentiality can be reliably maintained, and the electronic device 100 can be manufactured at low cost.

JP-A-11-302034 JP 2003-209198 A

  However, the manufacturing method of the electronic device 100 described with reference to FIG. 7 has the problem shown in FIG. 8 in the step (c). Here, FIG. 8 is an enlarged view of the metal pin portion in the step (c). That is, as shown in FIG. 8C-1, when the metal pin 120 is short or when the push-in amount is small, the metal pin 120 is wrapped in the low melting point glass 170. For this reason, there exists a subject that the electrical connection of the electrode 130 and metal pin 120 which are formed at a process (d) cannot be ensured. Further, as shown in FIG. 8C-2, even if the metal pin 120 is pushed in as designed, the base 110 is exposed to a temperature equal to or higher than the softening point of the low-melting glass 170. 170 may cover the tip of the metal pin 120. Further, as shown in FIG. 8C-3, as a result of the metal pin 120 being exposed to a temperature of about 1000 ° C., an oxide film 180 grows around the metal pin 120, and the electrode 130 and the electronic component 140 are separated. There is a problem of not conducting. Therefore, the present invention aims to solve these problems.

In order to solve the above-described problems, the present invention provides the following means.
The invention according to claim 1 is a method of manufacturing an electronic device, the step of forming a recess on one of upper and lower surfaces of a glass base material, and by applying a via fill plating process to the recess. A step of filling the depression with a plating layer, and polishing the base material so that at least the bottom surface of the depression is exposed to the outside, thereby forming a base having a through electrode made of the plating layer on the polished base material A step of forming an internal wiring on one of upper and lower surfaces of the base so as to abut one end of the through electrode, and an electronic component on the base so as to be electrically connected to the internal wiring. And a mounting step.

The invention according to claim 2 is a method of manufacturing an electronic device according to claim 1, wherein after the plurality of electronic devices are collectively formed on one base, the electronic device is separated into pieces. It is characterized by providing.
According to a third aspect of the present invention, in the electronic device manufacturing method according to the first or second aspect, the plating layer is copper.
According to a fourth aspect of the present invention, in the electronic device manufacturing method according to the first or second aspect, the plating layer is an alloy layer.

According to a fifth aspect of the present invention, in the electronic device manufacturing method according to the fourth aspect, the alloy is made of an iron-nickel alloy.
According to a sixth aspect of the present invention, in the method for manufacturing an electronic device according to any one of the first to fifth aspects, the cavity can be joined to the base and is blocked from outside air together with the base in the joined state. A cover bonding step of bonding a cover forming a portion to the base and sealing the electronic component in the cavity, and a surface of the base facing the surface on which the internal wiring is formed, And a step of forming an external electrode so as to abut the end.

  According to the present invention, when the through electrode is formed, a step of performing via fill plating processing on the depression formed in the base material is used, and a step of inserting / pressing the metal pin is not used. Therefore, in the present invention, it is possible to avoid a situation in which the metal pin is encased in the low melting point glass or an oxide film is formed around the metal pin, so that the electrical conduction between the electronic component and the external electrode is stable. Can be kept. Furthermore, in the present invention, the through electrode can be easily formed simply by subjecting the recess to a via fill plating process and polishing the base material.

  As described above, the present invention has an effect that it is possible to provide a method for manufacturing an electronic device that can stably maintain conduction between an electronic component and an external electrode and can easily form a through electrode.

It is sectional drawing of the electronic device which concerns on this invention. It is a figure which shows the manufacturing process of the electronic device which concerns on this invention. It is an expanded sectional view of the penetration electrode part of the electronic device concerning the present invention. It is an expanded sectional view of the penetration electrode part of the electronic device concerning the present invention. It is a figure which shows another manufacturing process of the electronic device which concerns on this invention. It is a figure which shows another manufacturing process of the electronic device which concerns on this invention. It is a figure which shows the manufacturing process of a prior art example. It is an expanded sectional view of the metal pin part of a prior art example. It is a figure which shows another manufacturing process of the electronic device which concerns on this invention.

  Hereinafter, a first embodiment of an electronic device and a manufacturing method thereof according to the present invention will be described in detail with reference to the drawings. FIG. 1 is a cross-sectional view of an electronic device according to the present invention. In the electronic device 1, the electronic component 50 is mounted in a hollow portion surrounded by the glass base 10 and the cover 60 and shielded from the outside air. The electronic component 50 is electrically connected to the external electrode 70 that is a terminal mounted on the substrate via the mounting portion 40, the internal wiring 30, and the through electrode 20. Here, the cover 60 is not limited to glass. For example, when the electronic device 1 is a MEMS device such as a pressure sensor, a cover made of silicon or the like can be used. The cover 60 can be made of aluminum.

  The electronic device 1 shown in FIG. 1 is a crystal resonator on which a tuning-fork type crystal resonator element is mounted as an electronic component 50. In the present invention, the electronic device 1 includes, but is not limited to, a device in which various electronic components that can be mounted on the base 10 such as a piezoelectric element, an AT-cut crystal resonator, a semiconductor circuit, an LED, and various sensors are mounted. Moreover, the electronic device 1 does not need to have the cover 60, when mounting LED etc. as an electronic component.

  The through electrode 20 is made of copper. The through electrode 20 is not limited to copper. For example, an iron-nickel alloy or the like may be used in consideration of the difference in thermal expansion coefficient from the base 10. The through electrode 20 is provided so as to vertically penetrate the base 10 over the height direction of the base 10, and electrically connects the internal wiring 30 and the external electrode 70 connected to both ends.

  The internal wiring 30 and the external electrode 70 are each formed of a metal film, and the outermost surface has a layer shape using a noble metal such as gold, silver, or platinum. Here, since the noble metal has a small ionization tendency and has corrosion resistance, it is possible to suppress long-term deterioration of the internal wiring 30 and the external electrode 70, so that the reliability of the electronic device 1 using the present invention is improved. be able to. The internal wiring 30 and the external electrode 70 are respectively disposed at the upper and lower ends of the base 10 (and the through electrode 20). In addition, as a diffusion preventing layer for preventing metal diffusion, a metal layer such as nickel may be formed under the surface layer formed of a noble metal. Further, the internal wiring 30 and the external electrode 70 can be formed using the same material, but may be formed using different materials.

  Incidentally, a sputtering method is generally used as a method of forming the internal wiring 30 and the external electrode 70. However, the internal wiring 30 and the external electrode 70 may be formed using a plating method.

  Moreover, the mounting part 40 formed on the upper surface of the internal wiring 30 and connecting the internal wiring 30 and the electronic component 50 can use a conductive adhesive such as silver paste, for example. In that case, the internal wiring 30 and the electronic component 50 are bonded by baking a conductive adhesive (mounting portion 40) such as a silver paste as a connection portion. However, depending on the configuration of the electronic component 50, the conductive adhesive may not be used as the connection portion. For example, when a gold film (gold film) is formed on the outermost surface of the internal wiring 30, gold bumps (not shown) formed on the electronic component 50 can be used as the mounting portion 40. In that case, the gold bump formed on the electronic component 50 and the gold film of the internal wiring 30 can be bonded together by using a gold-gold bonding or the like instead of the conductive adhesive.

  The external electrode 70 can also be formed of a conductive adhesive such as a silver paste that relieves stress during board mounting.

(Electronic device manufacturing method)
Next, a method for manufacturing the electronic device 1 according to the present embodiment will be described with reference to FIGS.
2 to 4 are diagrams showing a method for manufacturing an electronic device that is manufactured at a wafer level and is finally cut by dicing or the like. The electronic device 1 according to the present embodiment is not limited to this, and may be formed as an individual package from the beginning.

FIG. 2 is a diagram illustrating a manufacturing process of the electronic device 1 according to the present embodiment.
FIG. 2A is a view for explaining a process of forming a concave recess in the base material 9. The recess is manufactured by sandblasting, laser processing, drilling, hot pressing, or the like.
FIG. 2B is a diagram for explaining a process of forming the plating layer 21 on the upper surface of the base material 9 including the depression by via fill plating. At this time, a metal layer by sputtering may be formed immediately before via fill plating.

  FIG. 2C is a diagram for explaining a polishing process of the base material 9. At least the bottom surface of the depression is exposed to the outside (specifically, the upper and lower surfaces of the base material 9 and the upper and lower end surfaces of the plating layer 21 are at the same height and are parallel surfaces). By polishing this, the plating layer 21 filled in the depression functions as the through electrode 20. Further, the ground base material 9 provided with the through electrode 20 becomes the base 10. Here, FIGS. 3 and 4 are enlarged views of a portion that becomes the through electrode 20 in the state of FIG. Specifically, FIG. 3 is a diagram illustrating a state in which a part of the plating layer 21 filled in the depression protrudes upward from the upper surface of the base material 9. On the other hand, FIG. 4 is a view showing a state in which the upper end surface of the plating layer 21 filled in the depression is formed in a concave shape with respect to the upper surface of the base material 9. Then, in the state shown in FIG. 3 or FIG. 4, the upper and lower surfaces of the base material 9 and the upper and lower end surfaces of the plating layer 21 are shown in FIG. 3 or FIG. By polishing the base material 9 from the upper and lower surfaces up to the position of the broken line, a satisfactory through electrode 20 can be formed regardless of the manner of via fill plating.

  FIG. 2D shows the internal wiring 30 on one surface (upper or lower surface) of the base 10 of the through electrode 20. Here, the base 10 shown in FIG. It is formed on the end surface on the upper surface) side and on one surface of the base 10 by using a sputtering method, the electronic component 50 is installed, and the internal wiring 30 and the electronic component 50 are connected via the mounting portion 40. It is a figure for demonstrating an electronic component connection process. Here, the mounting part 40 which connects the internal wiring 30 and the electronic component 50 can use conductive adhesives, such as a silver paste, for example. In that case, the internal wiring 30 and the electronic component 50 are bonded by baking a conductive adhesive such as silver paste as a connecting portion. In addition, depending on the configuration of the electronic component 50, the conductive adhesive may not be used as the connection portion. For example, when gold is used for the outermost surface of the internal wiring 30, gold bumps formed on the electronic component 50 can be used as the mounting portion 40. In that case, the gold bump formed on the electronic component 40 and the gold film of the internal wiring 30 can be bonded by using thermo-compression bonding instead of the conductive adhesive.

  FIG. 2E is a diagram for explaining a cap joining process for joining the cover 60 processed into a concave shape to the base 10 in order to protect the electronic component 50 mounted on the base 10. In this step, a hollow portion that is blocked from outside air is formed by the above-described one surface of the base 10 and the concave portion of the cover 60. Thereby, it can arrange | position in the state which sealed the electronic component in the cavity part. In addition, the material of the cover 60 may be appropriately selected from, for example, silicon, glass, aluminum, and the like in consideration of specifications required for the electronic component 50 such as a joining method and a degree of vacuum and cost. For example, when the electronic component 50 is a quartz crystal piece and the frequency is adjusted after the base 10 and the cover 60 are joined, it is desirable to select a glass member for the cover 60. As a method for joining the cover 60 and the base 10, for example, adhesion, anodic bonding, gold-gold bonding, or the like can be used. In addition, when the base 10 is processed into a concave shape, the cover 60 does not need to be formed into a concave shape. In this case, since the hollow portion is formed by the concave portion of the base 10 and one surface (lower surface) of the cover 60, the electronic component only needs to be provided in the hollow portion.

  In FIG. 2F, the external wiring 70 is sputtered on the end surface of the base 10 opposite to the above-described end surface of the base 10 and on the surface (lower surface) opposite to the one surface of the base 10. It is a figure for demonstrating the process formed using. Here, the internal wiring 30 and the external electrode 70 may be formed by combining a sputtering method, a vapor deposition method, and a photolithography method, respectively.

  FIG. 2G is a diagram for explaining a process of dividing the package into individual pieces. That is, the step suggested by FIG. 2G is a step of forming a plurality of electronic devices on one base 10 and then separating the electronic devices. In this process, depending on the material of the cover 60. Although the method of dividing into individual pieces varies, as an example, the electronic device can be divided into pieces by dicing or laser cutting.

  Here, in FIG. 2D, the internal wiring 30 is formed at the opening side of the dent (the upper end side of the dent shown in FIGS. 2A to 2C) and the opposite end (lower end). As shown in FIG. 9D, the internal wiring 30 may be formed on the opening side. The other steps of the method for manufacturing the electronic device 1 shown in FIG. 9 are the same as those in FIG.

  As described above, according to the method for manufacturing the electronic device 1 according to the present embodiment, when the through electrode 20 is formed, the step of performing the via fill plating process on the recess formed in the base material 9 is used, and the metal pin is fitted. / Do not use the step of pushing. Therefore, in the electronic device 1, it is possible to avoid a situation in which the metal pin is encased in the low melting point glass or an oxide film is formed around the metal pin. Therefore, the electrical connection between the electronic component 50 and the external electrode 70 can be avoided. Conductivity can be kept stable. Furthermore, in the electronic device 1, the through electrode 20 can be easily formed simply by subjecting the recess to via fill plating and polishing the base material 9.

Therefore, the present invention can be said to be a method for manufacturing an electronic device that can stably maintain conduction between the electronic component and the external electrode and can easily form a through electrode.
In addition, according to the method for manufacturing the electronic device 1 according to the present embodiment, as shown in FIG. 2G, after the plurality of electronic devices 1 are collectively formed on one base 10, the electronic devices 1 are separated. Can be separated. Therefore, the electronic devices according to the present invention can be manufactured in a lump, and the manufacturing time and process in the mass production of electronic devices can be shortened and the cost can be reduced.

Further, according to the method for manufacturing the electronic device 1 according to the present embodiment, copper can be used as the through electrode 20. Therefore, a through electrode having a low resistance value can be produced.
Moreover, according to the manufacturing method of the electronic device 1 according to the present embodiment, the plating layer 21 can be an alloy layer. Therefore, the hardness of the plating layer can be changed, and the structure of the through electrode integrated electrode can be strengthened.
Further, an iron-nickel alloy can be used as the alloy. Therefore, it can be close to the thermal expansion coefficient of the base material, resulting in a more stable product.

(Second Embodiment)
Next, a second embodiment of the electronic device manufacturing method according to the present invention will be described with reference to FIG. In addition, about 2nd Embodiment, the description about the process same as FIG. 2 which concerns on 1st Embodiment is abbreviate | omitted, and only a process different from FIG. 2 is demonstrated. FIG. 5 is a diagram illustrating a manufacturing process of the electronic device according to the present embodiment.

Here, the steps shown in FIGS. 5 (e), 5 (f), 5 (g), and 5 (h) are the same as those shown in FIGS. 2 (d), 2 (e), and 2 respectively. (F) The process is the same as the process shown in FIG.
FIG. 5A is a diagram for explaining a process of forming a through hole in the base 10. The through hole is manufactured by various methods such as sand blasting, laser processing, drilling, and hot pressing.

FIG. 5B is a diagram for explaining a process of forming the sacrificial material 11 on the lower surface of the base 10 so as to close at least the lower end of the through hole. As the sacrificial material 11, for example, a film having an adhesive layer, a dry resist, or the like is used.
FIG.5 (c) is a figure for demonstrating the process of forming the plating layer 21 by via fill plating. At this time, a metal layer by sputtering may be formed immediately before via fill plating.

  FIG. 5D illustrates a process of forming the internal wiring integrated through electrode 22 in which the through electrode 20 illustrated in FIG. 2C and the internal wiring 30 illustrated in FIG. 2D are integrally formed. FIG. The internal wiring integrated through electrode 22 forms the plating layer 21 by photolithography or the like. In consideration of the mounting portion 40, the internal wiring integrated through electrode 22 may be plated with gold or the like after the photolithography process. Then, this process is completed by peeling the sacrificial material 11 from the base 10. Here, as the peeling method, there are a method of peeling from the adhesive layer according to the configuration of the sacrificial material 11 and a method of removing the sacrificial material 11 itself by etching.

  As described above, according to the manufacturing method of the electronic device according to the present embodiment, the same effects as those of the manufacturing method of the electronic device according to the first embodiment can be obtained. Since the internal wiring can be integrated, a high-quality product with low wiring resistance can be provided.

(Third embodiment)
Next, a third embodiment of the electronic device manufacturing method according to the present invention will be described with reference to FIG. In addition, about 3rd Embodiment, the description is abbreviate | omitted about the process same as FIG. 2 which concerns on FIG. 2 which concerns on 1st Embodiment, and 2nd Embodiment, and only the process which is different from FIG. Will be explained. FIG. 6 is a diagram illustrating a manufacturing process of the electronic device according to the present embodiment.

  Here, the steps shown in FIGS. 6A, 6B, 6C, 5E, 5F, and 5H are the same as those shown in FIG. (A), FIG. 5 (b), FIG. 5 (c), FIG. 2 (d), FIG. 2 (e), and FIG.

  FIG. 6D is a diagram for explaining a process of peeling the sacrificial material 11 from the base 10 and reversing the base 10 in the vertical direction from the state shown in FIG. Here, as the peeling method, there are a method of peeling from the adhesive layer according to the configuration of the sacrificial material 11 and a method of removing the sacrificial material 11 itself by etching.

  FIG. 6G shows a process of forming the external electrode integrated through electrode 23 in which the through electrode 20 shown in FIG. 2C and the external electrode 70 shown in FIG. The external electrode integrated through electrode 23 forms the plating layer 21 by photolithography or the like. Further, after performing the photolithography process, the external electrode integrated through electrode 23 may be plated with gold or the like in consideration of the substrate mounting.

  As described above, according to the manufacturing method of the electronic device according to the present embodiment, the same effects as those of the manufacturing method of the electronic device according to the first and second embodiments can be exhibited. Since the through electrode and the external electrode can be integrated, it is possible to provide a high-quality product that has low wiring resistance and does not cause peeling of the external electrode.

  The electronic device of the present invention includes, for example, an oscillator or a clock using the electronic device of the present invention as an oscillator, a portable information device including the electronic device of the present invention in a timekeeping section, and a radio wave such as time information Can be used for an electronic device such as a radio timepiece provided in the receiver.

DESCRIPTION OF SYMBOLS 1 Electronic device 9 Base material 10 Base 11 Sacrificial material 20 Through electrode 21 Plating layer 22 Internal wiring integrated through electrode 23 External electrode integrated through electrode 30 Internal wiring 40 Mounting part 50 Electronic component 60 Cover 70 External electrode 100 Electronic device 110 Base 120 Metal pin 130 Electrode 140 Electronic component 150 Sealant 160 Cap 170 Low melting point glass 180 Oxide film

Claims (6)

Forming a depression on one of the upper and lower surfaces of the glass base material;
Filling the depression with a plating layer by performing via fill plating on the depression; and
Polishing the base material so that at least the bottom surface of the recess is exposed to the outside, thereby forming a base having a through electrode made of the plating layer on the base material after polishing;
Forming an internal wiring on one of upper and lower surfaces of the base so as to be in contact with one end of the through electrode;
Mounting an electronic component on the base so as to be electrically connected to the internal wiring;
The manufacturing method of the electronic device characterized by the above-mentioned.   2. The method of manufacturing an electronic device according to claim 1, further comprising a step of separating the electronic devices after forming a plurality of electronic devices collectively on one of the bases.   The method for manufacturing an electronic device according to claim 1, wherein the plating layer is copper.   The method of manufacturing an electronic device according to claim 1, wherein the plating layer is an alloy layer.   The method of manufacturing an electronic device according to claim 4, wherein the alloy is an iron-nickel alloy. A cover joining step that joins the base and forms a cavity that is shielded from outside air together with the base in the joined state; and seals the electronic component to the cavity by joining the base;
And a step of forming an external electrode on a surface of the base facing the surface on which the internal wiring is formed so as to abut against the other end of the through electrode. A method for manufacturing the electronic device according to claim 1.

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