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JP5798140B2 - Plasma processing equipment - Google Patents

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JP5798140B2
JP5798140B2 JP2013028420A JP2013028420A JP5798140B2 JP 5798140 B2 JP5798140 B2 JP 5798140B2 JP 2013028420 A JP2013028420 A JP 2013028420A JP 2013028420 A JP2013028420 A JP 2013028420A JP 5798140 B2 JP5798140 B2 JP 5798140B2
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upper electrode
plasma processing
substrate
chamber
processing apparatus
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JP2014157942A (en
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能文 青木
能文 青木
齋藤　誠
誠 齋藤
江藤　英雄
英雄 江藤
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Toshiba Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape

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Description

本発明の実施形態は、プラズマ処理装置に関する。   Embodiments described herein relate generally to a plasma processing apparatus.

従来、半導体製造プロセスでは、半導体製造装置であるプラズマ処理装置を用いて、ＲＩＥ（Reactive Ion Etching）等により被処理基板のエッチングが行われている。プラズマ処理装置には、被処理基板に対向するように、シリコンにより形成された上部電極が設けられている。   Conventionally, in a semiconductor manufacturing process, a substrate to be processed is etched by RIE (Reactive Ion Etching) or the like using a plasma processing apparatus which is a semiconductor manufacturing apparatus. The plasma processing apparatus is provided with an upper electrode made of silicon so as to face the substrate to be processed.

特開２０１０−１５７７５４号公報JP 2010-157754 A

本発明が解決しようとする課題は、上部電極のエッチングを抑制するプラズマ処理装置を提供することである。   The problem to be solved by the present invention is to provide a plasma processing apparatus that suppresses etching of the upper electrode.

実施形態に係る被処理基板を処理するプラズマ処理装置には、被処理基板を載置する基板載置部が設けられる。前記基板載置部に対向するように配置された上部電極が設けられる。前記上部電極の前記基板載置部に対向する面のうち外縁部が鏡面である。   The plasma processing apparatus for processing a substrate to be processed according to the embodiment is provided with a substrate mounting portion for mounting the substrate to be processed. An upper electrode is provided so as to face the substrate mounting portion. An outer edge portion of the surface of the upper electrode facing the substrate mounting portion is a mirror surface.

本発明の実施形態に係るプラズマ処理装置を示す断面図。Sectional drawing which shows the plasma processing apparatus which concerns on embodiment of this invention. 本発明の実施形態に係るプラズマ処理装置における上部電極を示す断面図。Sectional drawing which shows the upper electrode in the plasma processing apparatus which concerns on embodiment of this invention.

上部電極と被処理基板との間にプラズマを発生させるプラズマ処理装置においては、プラズマ化したエッチングガスにより上部電極の表面がエッチングされてしまうことがあった。特に、表面の粗さが大きい上部電極を用いた場合には、表面が荒れている部分に電界集中が発生し、その部分が大きくエッチングされることがあった。また、プラズマ化したエッチングガスが上部電極と上部電極上の支持部との間に回り込み、上部電極の裏面をエッチングすることもあった。これらの上部電極のエッチングにより、上部電極の材料である、例えばシリコンのダストがプラズマ処理装置のチャンバ内に発生し、被処理基板に付着するという問題があった。   In a plasma processing apparatus that generates plasma between an upper electrode and a substrate to be processed, the surface of the upper electrode may be etched by plasmaized etching gas. In particular, when an upper electrode having a large surface roughness is used, electric field concentration occurs in a portion where the surface is rough, and the portion may be etched greatly. In addition, the plasma-ized etching gas may circulate between the upper electrode and the support portion on the upper electrode to etch the back surface of the upper electrode. Due to the etching of the upper electrode, there is a problem that, for example, silicon dust, which is a material of the upper electrode, is generated in the chamber of the plasma processing apparatus and adheres to the substrate to be processed.

以下、本発明の実施形態について図面を参照しながら説明する。なお、これらの実施形態により本発明が限定されるものではない。また、以下の実施形態で用いられる膜の断面図は模式的なものであり、層の厚みと幅との関係や各層の厚みの比率などは現実のものとは異なる。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. Note that the present invention is not limited to these embodiments. In addition, the cross-sectional views of the films used in the following embodiments are schematic, and the relationship between the thickness and width of the layers, the ratio of the thicknesses of the layers, and the like are different from the actual ones.

図１は、本発明の実施形態に係るプラズマ処理装置の構成の一例を模式的に示す断面図である。ここでは、プラズマ処理装置１０として、ＲＩＥ装置を例示している。プラズマ処理装置１０は、気密に構成されたたとえばアルミニウム製のチャンバ１１を有している。このチャンバ１１は接地されている。   FIG. 1 is a cross-sectional view schematically showing an example of the configuration of a plasma processing apparatus according to an embodiment of the present invention. Here, an RIE apparatus is illustrated as the plasma processing apparatus 10. The plasma processing apparatus 10 includes a chamber 11 made of, for example, aluminum that is airtight. This chamber 11 is grounded.

チャンバ１１内には、処理対象としての被処理基板Ｗを水平に支持するとともに、下部電極として機能する支持テーブル２１が設けられている。支持テーブル２１の表面上には、図示しないが被処理基板Ｗを静電吸着する静電チャック機構など保持機構が設けられている。支持テーブル２１の側面および底面の周縁部を覆うように絶縁リング２２が設けられており、絶縁リング２２で覆われた支持テーブル２１の上方の外周には、エッジリング２３が設けられている。このエッジリング２３は、被処理基板Ｗのエッチング時に、電界が被処理基板Ｗの周縁部で鉛直方向（被処理基板面に垂直な方向）に対して偏向しないように電界を調整するために設けられる部材である。   In the chamber 11, a support table 21 that horizontally supports the substrate W to be processed and functions as a lower electrode is provided. On the surface of the support table 21, a holding mechanism such as an electrostatic chuck mechanism that electrostatically attracts the substrate W to be processed is provided (not shown). An insulating ring 22 is provided so as to cover the peripheral portions of the side surface and the bottom surface of the support table 21, and an edge ring 23 is provided on the outer periphery above the support table 21 covered with the insulating ring 22. The edge ring 23 is provided to adjust the electric field so that the electric field is not deflected in the vertical direction (direction perpendicular to the surface of the substrate to be processed) at the peripheral portion of the substrate W to be processed when the substrate W to be processed is etched. It is a member to be.

また、支持テーブル２１は、チャンバ１１内の中央付近に位置するように、チャンバ１１に支持される支持部（図示なし）により固定されている。支持テーブル２１は、の周縁部には、絶縁リング２２が設けられている。また、支持テーブル２１には、高周波電力を供給する給電線３１が接続されており、この給電線３１にブロッキングコンデンサ３２、整合器３３および高周波電源３４が接続されている。高周波電源３４からは所定の周波数の高周波電力が支持テーブル２１に供給される。   The support table 21 is fixed by a support portion (not shown) supported by the chamber 11 so as to be located near the center in the chamber 11. The support table 21 is provided with an insulating ring 22 at the periphery thereof. In addition, a power supply line 31 that supplies high-frequency power is connected to the support table 21, and a blocking capacitor 32, a matching unit 33, and a high-frequency power source 34 are connected to the power supply line 31. A high frequency power having a predetermined frequency is supplied from the high frequency power supply 34 to the support table 21.

下部電極として機能する支持テーブル２１に対向するように、支持テーブル２１の上部に上部電極４２が設けられている。上部電極４２は支持テーブル２１と平行に対向するように、支持テーブル２１から所定の距離を隔てたチャンバ１１の上部付近の部材４１に固定される。このような構造によって、上部電極４２と支持テーブル２１とは、一対の平行平板電極を構成している。また、上部電極４２の内縁部には、上部電極４２の板の厚さ方向を貫通する複数のガス供給路が設けられている。上部電極４２は、例えば円形状を有している。上部電極４２は、例えばシリコンにより形成された電極である。   An upper electrode 42 is provided on the upper side of the support table 21 so as to face the support table 21 that functions as the lower electrode. The upper electrode 42 is fixed to a member 41 near the upper portion of the chamber 11 at a predetermined distance from the support table 21 so as to face the support table 21 in parallel. With such a structure, the upper electrode 42 and the support table 21 constitute a pair of parallel plate electrodes. In addition, a plurality of gas supply passages penetrating in the thickness direction of the plate of the upper electrode 42 are provided at the inner edge portion of the upper electrode 42. The upper electrode 42 has a circular shape, for example. The upper electrode 42 is an electrode formed of, for example, silicon.

チャンバ１１の上部付近には、プラズマ処理時に使用される処理ガスが供給されるガス供給口１２が設けられており、ガス供給口１２には配管を通じて図示しないガス供給装置が接続されている。   Near the upper portion of the chamber 11, a gas supply port 12 for supplying a processing gas used during plasma processing is provided. A gas supply device (not shown) is connected to the gas supply port 12 through a pipe.

支持テーブル２１の下部にはガス排気口１３が設けられており、ガス排気口１３には配管を通じて図示しない真空ポンプが接続されている。   A gas exhaust port 13 is provided below the support table 21, and a vacuum pump (not shown) is connected to the gas exhaust port 13 through a pipe.

チャンバ１１内の支持テーブル２１と、上部電極４２との間の領域は、プラズマ処理室５１となり、支持テーブル２１と、チャンバ１１の底面との間の下部の領域はガス排気室５２となる。   A region between the support table 21 and the upper electrode 42 in the chamber 11 is a plasma processing chamber 51, and a lower region between the support table 21 and the bottom surface of the chamber 11 is a gas exhaust chamber 52.

このように構成されたプラズマ処理装置１０での処理の概要について説明する。まず、支持テーブル２１上に処理対象である被処理基板Ｗが載置され、たとえば静電チャック機構によって固定される。ついで、ガス排気口１３に接続される図示しない真空ポンプでチャンバ１１内が真空引きされる。   An outline of processing in the plasma processing apparatus 10 configured as described above will be described. First, the substrate W to be processed is placed on the support table 21 and fixed by, for example, an electrostatic chuck mechanism. Next, the inside of the chamber 11 is evacuated by a vacuum pump (not shown) connected to the gas exhaust port 13.

その後、チャンバ１１内が所定の圧力に達すると、図示しないガス供給装置からガス供給室６２に処理ガスが供給され、上部電極４２のガス供給路を介してプラズマ処理室５１に供給される。プラズマ処理室５１内の圧力が所定の圧力に達すると、上部電極４２（上部電極）を接地した状態で、支持テーブル２１（下部電極）に高周波電圧を印加して、プラズマ処理室５１内にプラズマを生成させる。ここで、下部電極には高周波電圧が印加されているので、プラズマと被処理基板との間に電位勾配が生じ、プラズマガス中のイオンが支持テーブル２１へと加速されることになり、エッチング処理が行われる。   Thereafter, when the inside of the chamber 11 reaches a predetermined pressure, a processing gas is supplied from a gas supply device (not shown) to the gas supply chamber 62 and is supplied to the plasma processing chamber 51 through the gas supply path of the upper electrode 42. When the pressure in the plasma processing chamber 51 reaches a predetermined pressure, a high frequency voltage is applied to the support table 21 (lower electrode) while the upper electrode 42 (upper electrode) is grounded, and plasma is generated in the plasma processing chamber 51. Is generated. Here, since a high-frequency voltage is applied to the lower electrode, a potential gradient is generated between the plasma and the substrate to be processed, and ions in the plasma gas are accelerated to the support table 21, so that an etching process is performed. Is done.

図２は、本発明の実施形態に係る上部電極４２を示す断面図である。上部電極４２の外縁部には、例えばテーパー面である側面と、被処理基板Ｗに面する側の主面を有する凸部４２ａが設けられる。この凸部４２ａの側面および主面は、鏡面となるように研磨処理されており、表面の粗さの平均は、100nm以下である。これにより、プラズマ処理装置１０のチャンバ１１内において、プラズマ処理をする際に、上部電極４２表面に電界集中することを避けることができ、上部電極４２が過度にエッチングされ、チャンバ１１内にダストとして飛散することを抑制することができる。   FIG. 2 is a cross-sectional view showing the upper electrode 42 according to the embodiment of the present invention. On the outer edge portion of the upper electrode 42, for example, a convex portion 42a having a side surface that is a tapered surface and a main surface facing the substrate to be processed W is provided. The side surface and the main surface of the convex portion 42a are polished so as to be a mirror surface, and the average surface roughness is 100 nm or less. As a result, when plasma processing is performed in the chamber 11 of the plasma processing apparatus 10, it is possible to avoid electric field concentration on the surface of the upper electrode 42, the upper electrode 42 is excessively etched, and dust is contained in the chamber 11. Scattering can be suppressed.

さらに、上部電極４２の裏面、すなわち被処理基板５２と対抗する面の反対側の面の外縁部が、鏡面となるように研磨されていてもよい。鏡面となるように研磨された上部電極４２の裏面の粗さの平均は、100nm以下である。上部電極４２上には、板の厚さ方向を貫通する複数のガス供給路が形成された部材４１が設けられる。部材４１と、上部電極４２は、例えば全面において密着する構造となっている。一般に、上部電極４２の裏面は粗く、プラズマ処理時にエッチングガスによってエッチングされていた。本実施形態のように、上部電極４２の裏面が研磨されている場合には、上部電極４２の外縁部において、部材４１と上部電極４２との密着性が向上し、プラズマ処理中に上部電極４２と部材４１との間にプラズマ化したガスが侵入されることを抑制することができる。これにより、上部電極４２がエッチングガスによるエッチングが抑制され、チャンバ１１内にダストが飛散することを抑制することができる。特に、上部電極４２の裏面のうち、外縁部４２ｂのみを研磨し、鏡面処理をしてもよい。これにより、上部電極４２と部材４１との密着性を良くし、上部電極４２の外側から上部電極４２と部材４１との間に流入するガスを抑制することができる。   Furthermore, the back surface of the upper electrode 42, that is, the outer edge portion of the surface opposite to the surface facing the substrate to be processed 52 may be polished so as to be a mirror surface. The average roughness of the back surface of the upper electrode 42 polished to have a mirror surface is 100 nm or less. On the upper electrode 42, a member 41 in which a plurality of gas supply passages penetrating in the thickness direction of the plate is formed is provided. For example, the member 41 and the upper electrode 42 are in close contact with each other. In general, the back surface of the upper electrode 42 is rough and has been etched by an etching gas during plasma processing. When the back surface of the upper electrode 42 is polished as in the present embodiment, the adhesion between the member 41 and the upper electrode 42 is improved at the outer edge of the upper electrode 42, and the upper electrode 42 is subjected to plasma processing. And the member 41 can be prevented from invading plasma gas. Thereby, the upper electrode 42 is suppressed from being etched by the etching gas, and dust can be prevented from scattering into the chamber 11. In particular, only the outer edge portion 42b of the back surface of the upper electrode 42 may be polished and mirrored. Thereby, the adhesiveness between the upper electrode 42 and the member 41 is improved, and the gas flowing between the upper electrode 42 and the member 41 from the outside of the upper electrode 42 can be suppressed.

以上に述べた本実施形態に係るプラズマ処理装置によれば、上部電極の外縁部の表面が鏡面処理されている。これにより、表面が荒れている部分に電界集中が発生し、その部分がエッチングされ、チャンバ内に上部電極からダストが飛散することを抑制することができる。なお、上部電極４２の外縁部は、凸部４２ａが設けられなくてもよい。   According to the plasma processing apparatus according to the present embodiment described above, the surface of the outer edge portion of the upper electrode is mirror-finished. As a result, electric field concentration occurs in a portion having a rough surface, the portion is etched, and dust can be prevented from scattering from the upper electrode into the chamber. The outer edge portion of the upper electrode 42 may not be provided with the convex portion 42a.

さらに、本実施形態によれば、上部電極の裏面が鏡面処理されている。これにより、上部電極の裏面と、上部電極の上部にある部材とが密着性良く接合され、プラズマ処理時に、エッチングガスが上部電極と部材との間に流入されることを抑制することができる。すなわち、上部電極のエッチングを抑制し、チャンバ内にダストが飛散することを抑制することができる。   Furthermore, according to this embodiment, the back surface of the upper electrode is mirror-finished. Thereby, the back surface of the upper electrode and the member above the upper electrode are joined with good adhesion, and it is possible to prevent the etching gas from flowing between the upper electrode and the member during the plasma processing. That is, it is possible to suppress etching of the upper electrode and suppress dust from being scattered in the chamber.

なお、本発明は、上述の実施形態にのみ限定されるものではなく、本発明の要旨を逸脱しない範囲内において種々変更を加え得ることは勿論である。   It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention.

本発明の実施形態を説明したが、この実施形態は、例として提示したものであり、発明の範囲を限定することは意図していない。この実施形態は、その他のさまざまな形態で実施されることが可能であり、発明の要旨を逸脱しない範囲で、種々の省略、置き換え、変更を行うことができる。この実施形態やその変形は、発明の範囲や要旨に含まれると同様に、特許請求の範囲に記載された発明とその均等の範囲に含まれるものである。   Although the embodiment of the present invention has been described, this embodiment is presented as an example and is not intended to limit the scope of the invention. This embodiment can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the spirit of the invention. This embodiment and its modifications are included in the scope of the present invention and the gist thereof, and are also included in the invention described in the claims and the equivalent scope thereof.

１０…プラズマ処理装置
１１…チャンバ
１２…ガス供給口
１３…ガス排気口
２１…支持テーブル
２２…絶縁リング
２３…エッジリング
３１…給電線
３２…ブロッキングコンデンサ
３３…整合器
３４…高周波電源
４１…部材
４２…上部電極
５１…プラズマ処理室
５２…ガス排気室
Ｗ…被処理基板 DESCRIPTION OF SYMBOLS 10 ... Plasma processing apparatus 11 ... Chamber 12 ... Gas supply port 13 ... Gas exhaust port 21 ... Support table 22 ... Insulation ring 23 ... Edge ring 31 ... Feeding line 32 ... Blocking capacitor 33 ... Matching device 34 ... High frequency power supply 41 ... Member 42 ... Upper electrode 51 ... Plasma processing chamber 52 ... Gas exhaust chamber W ... Substrate to be processed

Claims (3)

被処理基板を載置する基板載置部と、
前記基板載置部に対向するように配置された上部電極と、
を備え、前記被処理基板を処理するプラズマ処理装置であって、
前記上部電極の前記基板載置部に対向する面のうち外縁部が鏡面であり、前記上部電極
の裏面のうち外縁部のみが鏡面であることを特徴とするプラズマ処理装置。 A substrate placement unit for placing a substrate to be processed;
An upper electrode disposed to face the substrate mounting portion;
A plasma processing apparatus for processing the substrate to be processed,
An outer edge portion of the surface of the upper electrode facing the substrate mounting portion is a mirror surface, and the upper electrode
The plasma processing apparatus characterized in that only the outer edge portion of the back surface is a mirror surface . 前記上部電極の前記基板載置部に対向する面の外縁部は、側面と主面を有する凸部から
形成されることを特徴とする請求項１に記載のプラズマ処理装置。 The plasma processing apparatus according to claim 1, wherein an outer edge portion of a surface of the upper electrode facing the substrate mounting portion is formed of a convex portion having a side surface and a main surface. 前記鏡面は、面の粗さが100 ｎｍ以下であることを特徴とする請求項１又は請求項２に
記載のプラズマ処理装置。 The mirror surface is plasma processing apparatus according to claim 1 or claim 2 roughness of the surface is equal to or is less than 100 nm.
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JPH10214819A (en) * 1997-01-28 1998-08-11 Sumitomo Metal Ind Ltd Electrode plate for plasma etching
JP2000164568A (en) * 1998-11-25 2000-06-16 Hitachi Chem Co Ltd Manufacture of plasma etching electrode
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